INSTYTUT TECHNOLOGII MATERIALOW ELEKTRONICZNYCH
INSTYTUT TECHNOLOGII MATERIALOW ELEKTRONICZNYCH Patent applications | ||
Patent application number | Title | Published |
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20110300058 | METHOD OF GRAPHENE MANUFACTURING - The present invention relates to a method for manufacturing graphene by vapour phase epitaxy on a substrate comprising a surface of SiC, characterized in that the process of sublimation of silicon from the substrate is controlled by a flow of an inert gas or a gas other than an inert gas through the epitaxial reactor. The invention also relates to graphene obtained by this method. | 12-08-2011 |