| Institute of Physics, Chinese Academy of Sciences Patent applications |
| Patent application number | Title | Published |
|---|
| 20090273972 | MAGNETIC LOGIC ELEMENT WITH TOROIDAL MULTIPLE MAGNETIC FILMS AND A METHOD OF LOGIC TREATMENT USING THE SAME - A magnetic logic element with toroidal magnetic multilayers ( | 11-05-2009 |
| 20090152513 | POLAR MOLECULE DOMINATED ELECTRORHEOLOGICAL FLUID - Polar molecules dominated electrorheological fluids mainly comprising a mixture of dispersed phase of solid particles and/or dispersing liquid medium. The dispersed phase solid particles, on the surface, or the liquid dispersing medium contain polar molecules or polar groups, the dipole moment of which is 0.5-10 deb and the size is between 0.1 nm and 0.8 nm. Dispersed phase solid particles are spherical or nearly spherical, of which the size is 10-300 nm and dielectric constant is higher than 50. The conductance rate of the liquid dispersing medium is lower than 10 | 06-18-2009 |
| 20090136394 | SURFACE MODIFIED ELECTRODES FOR ER FLUIDS - The invention relates to modified electrodes for ER fluids prepared by adding a rough, wear-resisting, and low conductive modified layer on the surface of metallic electrodes. The material for the modified layer can be at least one from diamond, alumina, titanium dioxide, carborundum, titanium nitride, nylon, polytetrafluoroethylene, adhesive, and adhesive film. Through the addition of the modified layer, the adhesion of the ER fluid to electrodes is increased so that the shear stress measured near the plates is close to the intrinsic value, which makes the ER fluid applicable, while reducing the leakage current and increasing the breakdown voltage of the ER fluid equipment. | 05-28-2009 |
| 20080246023 | Transistor Based on Resonant Tunneling Effect of Double Barrier Tunneling Junctions - The present invention relates to a transistor based on resonant tunneling effect of double barrier tunneling junctions comprising: a substrate, an emitter, a base, a collector and a first and a second tunneling barrier layers; wherein the first tunneling barrier layer is located between the emitter and the base, and the second tunneling barrier layer is located between the base and the collector; furthermore, the junction areas of the tunneling junctions which are formed between the emitter and the base and between the base and collector respectively are 1 μm | 10-09-2008 |
