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Institute of Physics, Chinese Academy of Science
| Institute of Physics, Chinese Academy of Science Patent applications | ||
| Patent application number | Title | Published |
|---|---|---|
| 20090236586 | EPITAXIAL MATERIAL USED FOR GAN BASED LED WITH LOW POLARIZATION EFFECT AND MANUFACTURING METHOD THEREOF - A method of manufacturing epitaxial material used for GaN based LED with low polarization effect, which includes steps of growing n-type InGaAlN layer composed of GaN buffer layer ( | 09-24-2009 |