Institute of Applied Physics RAS

Patent application number	Title	Published
Institute of Applied Physics RAS Patent applications
20100218722	High velocity method for depositing diamond films from a gaseous phase in SHF discharge plasma and a plasma reactor for carrying out said method - The invention relates to carbon deposition by decomposing gaseous compounds with the aid of the SHF discharge plasma and can be used, for example, for producing polycrystalline diamond films (plates), which are used for producing output windows of power SHF sources, for example gyrotrons. Said invention ensures a high speed deposition of the high quality diamond films (having a loss-tangent angle □ equal to or less than 3×10	09-02-2010
20090123663	High velocity method for depositing diamond films from a gaseous phase in SHF discharge plasma and a plasma reactor for carrying out said method - The invention relates to carbon deposition by decomposing gaseous compounds with the aid of the SHF discharge plasma and can be used, for example, for producing polycrystalline diamond films (plates), which are used for producing output windows of power SHF sources, for example gyrotrons. Said invention ensures a high speed deposition of the high quality diamond films (having a loss-tangent angle □ equal to or less than 3×10	05-14-2009