| INSITITUTE OF MICROELECTRONICS, CHINESE ACADEMY OF SCIENCES Patent applications |
| Patent application number | Title | Published |
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| 20110303951 | SEMICONDUCTOR DEVICE AND METHOD OF FABRICATING THE SAME - The present application discloses a semiconductor device and a method for manufacturing the same. The semiconductor device comprises a semiconductor substrate; a first semiconductor layer on the semiconductor substrate; a second semiconductor layer surrounding the first semiconductor layer; a high k dielectric layer and a gate conductor formed on the first semiconductor layer; source/drain regions formed in the second semiconductor layer, wherein the second semiconductor layer has a slant sidewall in contact with the first semiconductor layer. The semiconductor device has an increased output current, an increased operating speed, and a reduced power consumption due to the channel region of high mobility. | 12-15-2011 |
| 20110227144 | HIGH-PERFORMANCE SEMICONDUCTOR DEVICE AND METHOD OF MANUFACTURING THE SAME - The present invention relates to a method of manufacturing a semiconductor device, and the method uses the mode of thermal annealing the source/drain regions and performing Halo ion implantation to form a Halo ion-implanted region by: first removing the dummy gate to expose the gate dielectric layer to form an opening; then performing a tilted Halo ion implantation to the device from the opening to form a Halo ion-implanted region on both sides of the channel of the semiconductor device; and then annealing to activate the dopants in the Halo ion-implanted region; finally performing subsequent process to the device according to the requirement of the manufacture process. Through the present invention, the dopants in the Halo ion-implanted region improperly introduced to the source region and the drain region may be reduced, and then the overlap between the Halo ion-implantation region and the dopant region of the source/drain regions may be reduced, thus to reduce the band-band leakage current in the MOSFET, and hence improve the performance of the device. | 09-22-2011 |
