Inventors list |
Assignees list |
Classification tree browser |
Top 100 Inventors |
Top 100 Assignees |
INFINEON TECHNOLOGIES NORTH AMERICAN CORP.
Milpitas, CA US
| INFINEON TECHNOLOGIES NORTH AMERICAN CORP. Patent applications | ||
| Patent application number | Title | Published |
|---|---|---|
| 20110070732 | METHOD OF SILICIDE FORMATION BY ADDING GRADED AMOUNT OF IMPURITY DURING METAL DEPOSITION - A method is provided for forming a metal semiconductor alloy that includes providing a deposition apparatus that includes a platinum source and a nickel source, wherein the platinum source is separate from the nickel source; positioning a substrate having a semiconductor surface in the deposition apparatus; forming a metal alloy on the semiconductor surface, wherein forming the metal alloy comprises a deposition stage in which the platinum source deposits platinum to the semiconductor surface at an initial rate at an initial period that is greater than a final rate at a final period of the deposition stage, and the nickel source deposits nickel to the semiconductor surface; and annealing the metal alloy to react the nickel and platinum with the semiconductor substrate to provide a nickel platinum semiconductor alloy. | 03-24-2011 |
| 20100321656 | TRANSMISSION MASK WITH DIFFERENTIAL ATTENUATION TO IMPROVE ISO-DENSE PROXIMITY - A system and method to compensate for the proximity effects in the imaging of patterns in a photolithography process. A light exposure of a photoresist layer is effectuated in predetermined patterns through an exposure mask having light-transmissive openings in correspondence to the predetermined patterns. The exposure mask has areas densely populated with the light-transmissive openings and areas sparsely populated with the light-transmissive openings. Light is attenuated through the densely populated light-transmissive openings by a different amount than through the sparsely populated light-transmissive openings. | 12-23-2010 |