| Infineon Technologies Agam Campeon Patent applications |
| Patent application number | Title | Published |
|---|
| 20080308861 | DUAL GATE FINFET - A circuit has a fin supported by a substrate. A source is formed at a first end of the fin and a drain is formed at a second end of the fin. A pair of independently accessible gates are laterally spaced along the fin between the source and the drain. Each gate is formed around approximately three sides of the fin. | 12-18-2008 |
| 20080303593 | MUGFET CIRCUIT FOR INCREASING OUTPUT RESISTANCE - In an embodiment, an apparatus includes a MuGFET device coupled to a reference source, the MuGFET device configured to receive an input signal at a gate thereof; and Also includes a further MuGFET device coupled between the MuGFET device and a first terminal of a load, a second terminal of the load coupled to a further reference source, the further MuGFET device configured to receive a further input signal at a gate thereof, and wherein the MuGFET device and the further MuGFET device are disposed above a substrate and configured to provide an output signal at the first terminal of the load. | 12-11-2008 |
| 20080297962 | BUS INTERFACE AND METHOD FOR SHORT-CIRCUIT DETECTION - Embodiments of bus interface circuitry and methods for short circuit detection are generally described herein. Other embodiments may be described and claimed. In some embodiments, the bus interface circuitry comprises logic circuitry to compare a driver stage output signal at a bond pad to internal reference voltages to generate control signals indicative of whether a short-circuit condition exists on a bus. The driver stage of the bus interface may be temporarily disabled when a short-circuit condition is indicated by the control signals. | 12-04-2008 |
| 20080297955 | SENSOR TEMPERATURE COMPENSATION - A device includes a pair of individual sensors spaced apart from each other. A current source provides current to both of the individual sensors. A differential temperature sensor is coupled thermally proximate the individual sensors and provides a temperature difference signal that is combined with current from the current source to provide a correction factor for a temperature gradient across the individual sensors. Alternatively, temperature responsive excitation sources may be positioned thermally proximate the sensors to provide temperature compensation. | 12-04-2008 |
| 20080296681 | CONTACT STRUCTURE FOR FINFET DEVICE - In accordance with an embodiment, a FinFET device includes: one or more fins, a dummy fin, a gate line, a gate contact landing pad, and a gate contact element. Each of the fins extends in a first direction above a substrate. The dummy fin extends in parallel with the fins in the first direction above the substrate. The gate line extends in a second direction above the substrate, and partially wraps around the fins. The gate contact landing pad is positioned adjacent to or above the dummy fin and electrically coupled to the gate line. The gate contact element is electrically coupled to the gate contact landing pad and is positioned to the top surface thereof. | 12-04-2008 |
| 20080290960 | APPARATUS OF IMPEDANCE MATCHING FOR BIDIRECTIONAL DATA LINE - An apparatus includes a bidirectional data line to couple to a device and an impedance to provide an impedance matching between the data line and the device. In some embodiments, when a direction of data flow in the data line is away from the device, the impedance is of a first impedance value, and when the direction of the data flow is toward the device, the impedance is of a second impedance value. In one embodiment, the second impedance value is substantially zero. | 11-27-2008 |
