| II-VI INCORPORATED Patent applications |
| Patent application number | Title | Published |
|---|
| 20120103249 | SIC SINGLE CRYSTAL SUBLIMATION GROWTH METHOD AND APPARATUS - A physical vapor transport growth system includes a growth chamber charged with SiC source material and a SiC seed crystal in spaced relation and an envelope that is at least partially gas-permeable disposed in the growth chamber. The envelope separates the growth chamber into a source compartment that includes the SiC source material and a crystallization compartment that includes the SiC seed crystal. The envelope is formed of a material that is reactive to vapor generated during sublimation growth of a SiC single crystal on the SiC seed crystal in the crystallization compartment to produce C-bearing vapor that acts as an additional source of C during the growth of the SiC single crystal on the SiC seed crystal. | 05-03-2012 |
| 20110303884 | SiC Crystals Having Spatially Uniform Doping Impurities - A sublimation-grown silicon carbide (SiC) single crystal boule includes a deep level dopant introduced into the SiC single crystal boule during sublimation-growth thereof such that in a continuous section of the boule that is not less than 50% of a continuous length of said boule, the deep level dopant concentration at the boule center varies by not more than 25% from the average concentration of the deep level dopant in the continuous section of the boule. | 12-15-2011 |
| 20110136287 | ANNEALING OF SEMI-INSULATING CdZnTe CRYSTALS - In a method of annealing a Cd | 06-09-2011 |
| 20100180814 | FABRICATION OF SIC SUBSTRATES WITH LOW WARP AND BOW - A method of fabricating an SiC single crystal includes (a) physical vapor transport (PVT) growing a SiC single crystal on a seed crystal in the presence of a temperature gradient, wherein an early-to-grow portion of the SiC single crystal is at a lower temperature than a later-to-grow portion of the SiC single crystal. Once grown, the SiC single crystal is annealed in the presence of a reverse temperature gradient, wherein the later-to-grow portion of the SiC single crystal is at a lower temperature than the early-to-grow portion of the SiC single crystal. | 07-22-2010 |
| 20100061914 | GUIDED DIAMETER SiC SUBLIMATION GROWTH WITH MULTI-LAYER GROWTH GUIDE - In the growth of a SiC boule, a growth guide is provided inside of a growth crucible that is charged with SiC source material at a bottom of the crucible and a SiC seed crystal at a top of the crucible. The growth guide has an inner layer that defines at least part of an opening in the growth guide and an outer layer that supports the inner layer in the crucible. The opening faces the source material with the seed crystal positioned at an end of the opening opposite the source material. The inner layer is formed from a first material having a higher thermal conductivity than the second, different material forming the outer layer. The source material is sublimation grown on the seed crystal in the growth crucible via the opening in the growth guide to thereby form the SiC boule on the seed crystal. | 03-11-2010 |
| 20100031877 | SIC SINGLE CRYSTALS WITH REDUCED DISLOCATION DENSITY GROWN BY STEP-WISE PERIODIC PERTURBATION TECHNIQUE - In a crystal growth method, a seed crystal | 02-11-2010 |
| 20100018455 | System for Forming SiC Crystals Having Spatially Uniform Doping Impurities - A physical vapor transport system includes a growth chamber charged with source material and a seed crystal in spaced relation, and at least one capsule having at least one capillary extending between an interior thereof and an exterior thereof, wherein the interior of the capsule is charged with a dopant. Each capsule is installed in the growth chamber. Through a growth reaction carried out in the growth chamber following installation of each capsule therein, a crystal is formed on the seed crystal using the source material, wherein the formed crystal is doped with the dopant. | 01-28-2010 |
| 20090302232 | MULTI-WINDOW SIGNAL PROCESSING ELECTRONICS ARCHITECTURE FOR PHOTON COUNTING WITH MULTI-ELEMENT SENSORS - A radiation detection and counting system ( | 12-10-2009 |
| 20090220788 | METHOD FOR SYNTHESIZING ULTRAHIGH-PURITY SILICON CARBIDE - Adsorbed gaseous species and elements in a carbon (C) powder and a graphite crucible are reduced by way of a vacuum and an elevated temperature sufficient to cause reduction. A wall and at least one end of an interior of the crucible is lined with C powder purified in the above manner. An Si+C mixture is formed with C powder purified in the above manner and Si powder or granules. The lined crucible is charged with the Si+C mixture. Adsorbed gaseous species and elements are reduced from the Si+C mixture and the crucible by way of a vacuum and an elevated temperature that is sufficient to cause reduction but which does not exceed the melting point of Si. Thereafter, by way of a vacuum and an elevated temperature, the Si+C mixture is caused to react and form polycrystalline SiC. | 09-03-2009 |
| 20090169459 | Intra-Cavity Gettering of Nitrogen in Sic Crystal Growth - In method of crystal growth, an interior of a crystal growth chamber ( | 07-02-2009 |
| 20090065701 | CdZnTe Device Using Constrained Design For High-Flux X-Ray Spectroscopic Imaging Applications - A CdZnTe photon counting detector includes a core material of Cd | 03-12-2009 |
| 20090014660 | COUNT UNIFORMITY CORRECTION IN FLUX SPACE FOR PIXILATED SEMICONDUCTING RADIATION DETECTORS - In operation of a photon counting detecting system ( | 01-15-2009 |
| 20080267353 | Energy Discriminating Scatter Imaging System - A specimen inspection system includes a photon source for outputting photons along a transmission path and a conveyor for translating a specimen completely through the transmission path. A radiation detector is positioned offset with respect to the transmission path for detecting photons that are scattered from the transmission path in response to interaction with the specimen passing therethrough. A controller determines from the detected scattered photons that a first material is present in the specimen. | 10-30-2008 |
| 20080261401 | Chemical-Mechanical Polishing of Sic Surfaces Using Hydrogen Peroxide or Ozonated Water Solutions in Combination with Colloidal Abrasive - A process is taught for producing a smooth, damage-free surface on a SiC wafer, suitable for subsequent epitaxial film growth or ion implantation and semiconductor device fabrication. The process uses certain oxygenated solutions in combination with a colloidal abrasive in order to remove material from the wafer surface in a controlled manner. Hydrogen peroxide with or without ozonated water, in combination with colloidal silica or alumina (or alternatively, in combination with HF to affect the oxide removal) is the preferred embodiment of the invention. The invention also provides a means to monitor the sub-surface damage depth and extent since it initially reveals this damage though the higher oxidation rate and the associated higher removal rate. | 10-23-2008 |
| 20080203514 | High Performance CdxZn1-xTe X-Ray and Gamma Ray Radiation Detector and Method of Manufacture Thereof - The present invention is a radiation detector that includes a crystalline substrate formed of a II-VI compound and a first electrode covering a substantial portion of one surface of the substrate. A plurality of second, segmented electrodes is provided in spaced relation on a surface of the substrate opposite the first electrode. A passivation layer is disposed between the second electrodes on the surface of the substrate opposite the first electrode. The passivation layer can also be positioned between the substrate and one or both of the first electrode and each second electrode. The present invention is also a method of forming the radiation detector. | 08-28-2008 |
