| IDEAL STAR INC. Patent applications |
| Patent application number | Title | Published |
|---|
| 20100206049 | Gas Sensor, Gas Measuring System Using the Gas Sensor, and Gas Detection Module for the Gas Sensor - A gas sensor, which is extremely compact to be arranged for separated gas piping in semiconductor device manufacturing equipment, a gas measuring system using such gas sensor, and a gas detection module for the gas measuring system. The gas sensor has a gas detection device containing a dielectric semiconductor, the electric conductivity of the gas detection device varying in response to the degree of adsorption of gases to the gas detection device, a capacitive element connected in series to the gas detection device, and a pair of electrodes which are connected to electric terminals of an electric element comprising the gas detection device and the capacitive element, wherein the gas sensor is capable of detecting the degree of adsorption of gases to the gas detection device from an electrical response to a voltage which is applied to the electrodes and which periodically varies and reverses in polarity. | 08-19-2010 |
| 20100117112 | LIGHT-EMITTING ELEMENT AND DEVICE - A light-emitting element used for display devices and illuminating devices has been formed on a flat substrate, and therefore, when the size of such devices is increased, manufacturing apparatuses also have to be enlarged. Also, a problem involved has been that even a failure of one light-emitting element causes the entire device to fail, making improvement of production yield difficult. To solve the above problems, in the present invention, light-emitting elements are formed as linear elements, and the linear elements are combined to form a plane light-emitting device. This enables the light-emitting device to be produced by selecting only linear light-emitting elements of good quality, and enlargement of apparatuses and enhancement of production yield can be expected. | 05-13-2010 |
| 20090230979 | FULLERENE OR NANOTUBE, AND METHOD FOR PRODUCING FULLERENE OR NANOTUBE - Fullerenes are a novel material that has been expected to serve as a promising material in the construction of organic devices. However, the electric conductivity of fullerenes, which has been, reported heretofore spreads over a wide range including values corresponding to insulators as well as those corresponding to semiconductors. The present invention makes it possible to improve the conductivity of fullerenes highly reproducibly by heating the fullerenes at a specified temperature in an inert gas which is flowed under a specified condition, that is, by controlling the concentration of impurities, particularly oxygen and water adsorbed to the fullerenes. | 09-17-2009 |
| 20090152682 | LINE ELEMENT AND METHOD OF MANUFACTURING LINE ELEMENT - An element capable of manufacturing various devices of any shape having plasticity or flexibility without being limited by shape and a method for manufacturing thereof are provided. An element characterized by that a circuit element is formed continuously or intermittently in the longitudinal direction. An element characterized by that a cross section having a plurality of areas forming a circuit is formed continuously or intermittently in the longitudinal direction. | 06-18-2009 |
| 20090008635 | COLUMNAR ELECTRIC DEVICE AND PRODUCTION METHOD THEREOF - A sensor whose size can be decreased without marring the performance and which can be installed in a narrow place, an electric device, and a method for easily manufacturing the electric device. By vacuum deposition of semiconductor on a columnar body or by applying a melt, solution, or gel of semiconductor to the columnar body, a coating of semiconductor is formed. Four insulating wires, a stripe band of the connected four insulating wires are wound around the columnar body. Then, one of the insulating wires is removed to form a copper wire in the vacant portion by copper vacuum deposition. Lastly, another insulating wire not adjacent to the copper wire is removed to form an aluminum wire in the vacant portion by aluminum vacuum deposition. By measuring the resistance between the copper and aluminum wires, the intensity of light striking the semiconductor can be determined. | 01-08-2009 |
