| ICT Integrated Circuit Testing Gesellschaft fuer Halbleiterprueftechnik mbH Patent applications |
| Patent application number | Title | Published |
|---|
| 20100051804 | FAST WAFER INSPECTION SYSTEM - A charged particle beam device is provided including a particle source emitting a primary particle beam, a secondary particle beam generated by the impingement of the primary particle beam on the sample, a detection unit for detecting the secondary particle beam, the detector having at least two detector channels, and a distribution deflecting device for deflecting the secondary particle beam in a chronological sequence. Further, a detection assembly for a fast wafer inspection system is provided including a distribution deflecting device for distributing a secondary particle beam in a chronological sequence and a detector for detecting the secondary particle beam, the detector having multiple detector channels. Further, a method of operating a particle beam device with chronological resolution is provided. | 03-04-2010 |
| 20100006447 | METHOD OF PREPARING AN ULTRA SHARP TIP, APPARATUS FOR PREPARING AN ULTRA SHARP TIP, AND USE OF AN APPARATUS - A method of preparing an ultra sharp tip, in particular a single atom tip, is provided, comprising providing a tip having a shank, an apex, and a coating covering the shank and the apex; locally removing the coating from the apex by field evaporation; and partially or fully restoring the coating at the apex. | 01-14-2010 |
| 20090146074 | HIGH RESOLUTION GAS FIELD ION COLUMN WITH REDUCED SAMPLE LOAD - A method of operating a focused ion beam device having a gas field ion source is described. According to some embodiments, the method includes emitting an ion beam from a gas field ion source, providing an ion beam column ion beam energy in the ion beam column which is higher than the final beam energy, decelerating the ion beam for providing a final beam energy on impingement of the ion beam on the specimen of 1 keV to 4 keV, and imaging the specimen. | 06-11-2009 |
| 20090057566 | GAS ION SOURCE WITH HIGH MECHANICAL STABILITY - A gas field ion source is described for a charged particle beam device having a charged particle beam column. The gas field ion source includes an emitter unit, a cooling unit, and a thermal conductivity unit for thermal conductivity from the cooling unit to the emitter unit, wherein the thermal conductivity unit is adapted for reduction of vibration transfer from the cooling unit to the emitter unit. | 03-05-2009 |
| 20080284332 | GUN CHAMBER, CHARGED PARTICLE BEAM APPARATUS AND METHOD OF OPERATING SAME - A gun chamber for a charged particle emitter is provided, said gun chamber comprising at least one electrode coated with a non-evaporable getter (NEG) material. | 11-20-2008 |
| 20080283745 | EMITTER CHAMBER, CHARGED PARTICAL APPARATUS AND METHOD FOR OPERATING SAME - An emitter chamber for a charged particle beam apparatus with a wall defining a vacuum enclosure is provided, the emitter chamber comprising a housing enclosing an emitter (and at least one pump and attachment means for attaching said emitter chamber to the wall of said charged particle apparatus so that the housing of said emitter chamber is accommodated within said vacuum enclosure. | 11-20-2008 |
