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Hyunix Semiconductor Inc.
| Hyunix Semiconductor Inc. Patent applications | ||
| Patent application number | Title | Published |
|---|---|---|
| 20090001582 | SEMICONDUCTOR DEVICE WITH METAL GATE AND METHOD FOR FABRICATING THE SAME - A semiconductor device includes a substrate, a gate dielectric layer over the substrate, a silicon electrode over the gate dielectric layer, wherein the silicon electrode comprises a damascene pattern, a diffusion barrier layer on a bottom and a sidewall of the damascene pattern, and a metal electrode over the diffusion barrier layer, wherein the metal electrode fills the damascene pattern. | 01-01-2009 |