| Hynix Semiconductor Inc. Patent applications |
| Patent application number | Title | Published |
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| 20120137046 | BLOCK CONTROL DEVICE OF SEMICONDUCTOR MEMORY AND METHOD FOR CONTROLLING THE SAME - A block control device for a semiconductor memory and a method for controlling the same are disclosed, which relate to a technology for controlling a block operation state of a Low Power Double-Data-Rate 2 (LPDDR2) non-volatile memory device. A block control device for use in a semiconductor memory includes a block address comparator configured to compare a first block address with a last block address, and output a same pulse or unequal pulse according to the comparison result, a block address driver configured to output a lock state control signal for driving a block address in response to the same pulse, a block address counter configured to count block addresses from the first block address to the last block address in response to the unequal pulse, and generate a block data activation pulse, and a block address register configured to store a lock state of a corresponding block in response to the lock state control signal and the block data activation pulse. | 05-31-2012 |
| 20120136611 | SEMICONDUCTOR APPARATUS AND TEST METHOD THEREOF - A semiconductor apparatus includes first and second chips sharing first and second data channels. The first chip compresses first test data of the first chip and outputs the compressed first test data through the first data channel in a first test mode, and the second chip compresses second test data of the second chip and outputs the compressed second test data through the second data channel in the first test mode. | 05-31-2012 |
| 20120135592 | METHOD FOR MANUFACTURING SEMICONDUCTOR DEVICE - A method for manufacturing a semiconductor device is disclosed, which reduces a step difference between a peripheral region and a cell region. In the semiconductor device, a metal contact of the peripheral region is configured in a multi-layered structure. Prior to forming a bit line and a storage node contact in the cell region, a contact and a line are formed in the peripheral region, such that a step difference between the cell region and the peripheral region is reduced, resulting in a reduction in parasitic capacitance between lines. | 05-31-2012 |
| 20120135586 | METHOD OF MANUFACTURING SEMICONDUCTOR DEVICE - A method of manufacturing a semiconductor device includes forming silicon line patterns in a semiconductor substrate, forming an insulating layer over the silicon line patterns, forming a conductive pattern between the silicon line patterns, forming a spacer over the substrate, forming an interlayer insulating layer between the silicon line patterns, removing the spacer on one side of the silicon line patterns to expose the conductive pattern, forming a bit line contact open region by removing the interlayer insulating layer, forming a polysilicon pattern to cover the bit line contact open region, and forming a junction region diffused to the silicon line pattern through the bit line contact open region. Thereby, a stacked structure of a titanium layer and a polysilicon layer are stably formed when forming a buried bit line and a bit line contact is formed using diffusion of the polysilicon layer to prevent leakage current. | 05-31-2012 |
| 20120135573 | METHOD FOR MANUFACTURING VERTICAL TRANSISTOR HAVING ONE SIDE CONTACT - A method for manufacturing a vertical transistor having a one side contact includes: forming separate active regions using trenches, on a semiconductor substrate, the active regions having first and second side surfaces facing the trenches; forming a first liner on the first and second side surfaces; forming a second liner which exposes a lower portion of the first liner on the first side surface; forming a third liner covering the portion of the first layer exposed by the second liner; forming a sacrifice layer on the third liner to fill the trench; forming an etch barrier to selectively expose upper end portions of the first to third liners positioned adjacent to the first side surface; selectively removing the third liner not covered by the etch barrier to expose a portion of the first liner not covered by the second liner; selectively removing the exposed portion of the first liner to expose a lower portion of the first side surface; and forming a buried bit line contacted with the exposed portion of the first side surface. | 05-31-2012 |
| 20120135340 | PHOTOMASK AND FORMATION METHOD THEREOF - A method for forming a photomask includes detecting a defect of the photomask which has a mirror layer formed on a first surface of a substrate, and forming a recess groove on a first layer which is formed on a second surface of the substrate, wherein the coordinate of the recess groove corresponds to the coordinate of the defect. | 05-31-2012 |
| 20120133804 | APPARATUS AND METHOD FOR CORRECTING DEFECTIVE PIXEL - Provided is an apparatus and method for detecting and correcting a defective pixel with consideration of a position of the target pixel. The apparatus includes a target pixel area discrimination unit discriminating a position of a target pixel, a defective pixel determination unit selecting neighboring pixels in consideration of the position of the target pixel and determining whether or not the target pixel is defective, and defective pixel correction unit correcting the target pixel by using the neighboring pixels. | 05-31-2012 |
| 20120133423 | SEMICONDUCTOR APPARATUS, SEMICONDUCTOR SYSTEM, AND METHOD FOR OUTPUTTING INTERNAL INFORMATION THEREOF - A semiconductor apparatus may include a plurality of through-semiconductor chip lines which pass through a plurality of stacked semiconductor chips. An uppermost semiconductor chip among the plurality of stacked semiconductor chips is configured to transfer its internal information signal to an assigned corresponding through-semiconductor chip line, and at least one semiconductor chip other than the uppermost semiconductor chip is configured to logically combine respective internal information signals transferred through through-semiconductor chip lines and their internal information signals and sequentially transfer resultant signals to assigned corresponding through-semiconductor chip lines. The at least one semiconductor chip other than the uppermost semiconductor chip logically combines the internal information signals transferred through the through-semiconductor chip lines from adjoining semiconductor chips and its internal information signals. | 05-31-2012 |
| 20120133415 | LEVEL SHIFTER - A level shifter includes a driving signal generating unit, a driving unit, and a current path forming unit. The driving signal generating unit is configured to generate a pull-up signal and a pull-down signal in response to an input signal, which may swing between a first high level and a first low level. The driving unit is configured to generate an output signal swinging between a second high level and a second low level in response to the pull-up signal and the pull-down signal. The current path forming unit is configured to form a current path between the pull-up signal and the pull-down signal in response to the pull-up signal and the pull-down signal. | 05-31-2012 |
| 20120133019 | FUSE OF SEMICONDUCTOR DEVICE AND METHOD OF FORMING THE SAME - A fuse of a semiconductor device includes first fuse metals formed over an underlying structure and a second fuse metal formed between the first fuse metals. Accordingly, upon blowing, the fuse metals are not migrated under conditions, such as specific temperature and specific humidity. Thus, reliability of a semiconductor device can be improved. | 05-31-2012 |
| 20120133018 | SEMICONDUCTOR DEVICE AND METHOD OF REPAIRING THE SAME - A method of repairing a semiconductor device includes forming a first conductive interconnection and a second conductive interconnection spaced from the first conductive interconnection on a semiconductor substrate, forming a magnetic fuse on the first conductive interconnection and forming a first contact plug on the second conductive interconnection, forming a metal interconnection on the magnetic fuse and the first contact plug, and applying a bias to the first conductive interconnection or to the second conductive interconnection corresponding to a normal cell or a redundancy cell and the metal interconnection. The method can readily prevent the problems caused in a laser cutting method without using a method of physically cutting a fuse by radiation of a laser when a semiconductor device fuse is repaired. | 05-31-2012 |
| 20120132968 | SEMICONDUCTOR DEVICE AND METHOD FOR MANUFACTURING THE SAME - A semiconductor device and a method for manufacturing the same are disclosed. The method for manufacturing a semiconductor device includes forming a device isolation film defining an active region over a semiconductor substrate including a periphery region, forming a gate pattern over the active region, forming a contact plug coupled to each of the gate pattern and the active region, forming a line coupled to the contact plug and a first reservoir capacitor over the same layer as in the line, and forming a second storage capacitor coupled to the first storage capacitor. The semiconductor device sufficiently endures a high bias not only using a line electrode and a dielectric film of a periphery region but also using a MOS-type storage capacitor of an upper electrode, and couples a cylindrical storage capacitor in series to a MOS-type capacitor so that it can be used in a small region. | 05-31-2012 |
| 20120131258 | SEMICONDUCTOR MEMORY APPARATUS AND METHOD FOR OPERATING THE SAME - A semiconductor memory apparatus includes, inter alia, a master chip and a plurality of slave chips. Each of the slave chips includes a plurality of banks. A first reception signal, a first timing signal, a bank address signal, and a slice selection signal to the slave chips may be provided by a master chip. The slave chips include a slice determining unit configured to compare the slice selection signal and a slice code and generate a slice enable signal, and a bank selecting unit configured to receive the bank address signal in response to the first reception signal and the slice enable signal and generate a bank enable signal in response to the bank address signal and the first timing signal. | 05-24-2012 |
| 20120129341 | METHOD FOR FABRICATING VIA HOLE AND THROUGH-SILICON VIA - A method for fabricating a via hole includes forming a first mask pattern on a first surface of a wafer exposing a portion of the first surface of the wafer, forming a passivation region within the wafer by implanting impurities into the exposed portion of the wafer using the first mask pattern as an ion implantation barrier layer, forming an etching stop layer on the first surface of the wafer including the passivation regions, forming a second mask pattern on a second surface of the wafer faces away from the first surface of the wafer, wherein the second mask pattern exposes a portion of the second surface of the wafer over an area between the passivation regions, and forming a via hole by etching the wafer using the second mask pattern as an etching mask. | 05-24-2012 |
| 20120129316 | METHOD FOR FORMING FINE PATTERN OF SEMICONDUCTOR DEVICE - A method for forming fine pattern includes sequentially forming a first thin film and a second thin film over a target layer for patterning, forming a partition over the second thin film, removing the partition after forming spacers on sidewalls of the partition, forming first pattern of the second thin film by etching the second thin film of a first region and the second thin film of a second region while exposing the spacers, forming second pattern of the second thin film by using the spacers as masks and etching the first pattern of the second thin film in the first region, forming first thin film pattern by using the first and second patterns of the second thin film as masks in the first and second regions and etching the first thin film, and etching the pattern target layer. | 05-24-2012 |
| 20120127813 | DEVICE AND METHOD FOR STORING ERROR INFORMATION OF MEMORY - A device for storing error information of a memory device includes a plurality of parent memories and a plurality of child memories. Each of the parent memories stores a row address and a column address of one defective cell. Each of the child memories stores a column address of a defective cell, having a row address identical to a row address stored in the corresponding parent memory, or a row address of a defective cell, having a column address identical to a column address stored in the corresponding parent memory. Herein, each of the parent memories stores information about information about whether a row repair must be performed to repair a defective cell stored in the parent memory and information about whether a column repair must be performed to repair a defective cell stored in the parent memory. | 05-24-2012 |
| 20120127809 | PRECHARGE SIGNAL GENERATION CIRCUIT OF SEMICONDUCTOR MEMORY APPARATUS - A precharge signal generation circuit of a semiconductor memory apparatus may comprise a read/write precharge command generation section configured to delay a precharge command by a first delay time set in response to a control signal to generate one of a read precharge command and a write precharge command; and a read/write bank precharge address generation section configured to delay a bank column address strobe signal by a second delay time set in response to the precharge command delayed in the read/write precharge command generation section, and generate one of a read bank precharge address and a write bank precharge address. | 05-24-2012 |
| 20120127660 | CYLINDRICAL PACKAGES, ELECTRONIC APPARATUS INCLUDING THE SAME, AND METHODS OF FABRICATING THE SAME - Cylindrical packages are provided. The cylindrical package includes a cylindrical substrate having a hollow region therein and at least one semiconductor chip mounted on an outer circumference of the cylindrical substrate. Related electronic products and related fabrication methods are also provided. | 05-24-2012 |
| 20120127347 | IMAGE PROCESSING APPARATUS AND SYSTEM - There is provided an image processing apparatus and system for demosaicing. The image processing apparatus comprises an edge determination module configured to determine whether a target pixel is an edge pixel and a direction of an image edge if the target pixel is an edge pixel; and a demosaicing module configured to extract a luminance component value of the target pixel using a Bayer image pattern having the target pixel in a central portion of the Bayer image pattern, wherein the demosaicing module is configured to extract the luminance component value of the target pixel using the Bayer image pattern by a weighting process if the target pixel is determined as an edge pixel. | 05-24-2012 |
| 20120126857 | COMMAND BUFFER CIRCUIT OF SEMICONDUCTOR APPARATUS - A command buffer circuit of a semiconductor apparatus includes a first buffer configured to receive a first command signal and generate a first command control signal, a second buffer configured to receive a second command signal and generate a second command control signal, a second block configured to select and output the first command control signal or the second command control signal in response to a rank control signal, and a control signal generation block configured to generate the rank control signal in response to a single rank signal and a chip select signal. | 05-24-2012 |
| 20120126373 | SEMICONDUCTOR DEVICE INCLUDING INNER INTERCONNECTION STRUCTURE - A semiconductor device includes a semiconductor chip and an inner interconnection structure. The semiconductor chip includes a front surface that exposes first connection terminals and a rear surface that is opposite to the front surface and exposes second connection terminals separated from the first connection terminals. The inner interconnection structure includes horizontal buried conductive lines and vertical connection lines disposed to pierce the semiconductor chip to connect the first connection terminals and the second connection terminals. | 05-24-2012 |
| 20120126304 | FLOATING GATE TYPE SEMICONDUCTOR MEMORY DEVICE AND METHOD OF MANUFACTURING THE SAME - A floating gate type semiconductor memory device includes a tunnel insulating layer, a floating gate formed on the tunnel insulating layer, a control gate electrode formed over the floating gates, a charge blocking layer formed between the floating gates and the control gate electrode, and a barrier layer formed in one or more areas of an area between the charge blocking layer and the control gate electrode and an area between the floating gate and the charge blocking layer and on an area corresponding to the sidewall of the floating gate. | 05-24-2012 |
| 20120125879 | METHOD FOR FABRICATING CAPACITOR - A method for fabricating a capacitor includes: forming a first mold layer having a first through hole on a semiconductor substrate; forming a hole blocking layer filling and blocking an entrance of the first through hole; forming a second mold layer on the hole blocking layer and the first mold layer; forming a second through hole passing through the second mold layer and aligned with the first through hole; selectively removing the hole blocking layer exposed to the second through hole; forming a storage node along a profile of the first and second through holes; and selectively removing a portion of the first and second mold layers. | 05-24-2012 |
| 20120124408 | SEMICONDUCTOR APPARATUS - A semiconductor apparatus may comprise: a first chip ID generation unit configured to receive an enable signal through a first through-silicon via and a clock signal through a second through-silicon via and generate a first chip ID signal and a delayed enable signal; a second chip ID generation unit configured to receive the delayed enable signal through a third through-silicon via from the first chip ID generation unit and the clock signal and generate a second chip ID signal; a first chip selection signal generation unit configured to receive the first chip ID signal and a main ID signal and generate a first chip selection signal; and a second chip selection signal generation unit configured to receive the second chip ID signal and the main ID signal and generate a second chip selection signal. | 05-17-2012 |
| 20120124302 | SOLID STATE STORAGE SYSTEM FOR UNIFORMLY USING MEMORY AREA AND METHOD CONTROLLING THE SAME - A solid state storage system includes a memory area having a plurality of pages and is capable of storing program information about each page. The memory area stores the number of pulse counts applied to each page. A main memory controller receives the program information from the memory area and determines whether to program pages according to the program information. The main memory controller determines whether the program information for a page is at a predetermined amount and if the corresponding page should be programmed again or not. | 05-17-2012 |
| 20120122282 | METHOD OF MANUFACTURING SEMICONDUCTOR DEVICES - A method of manufacturing semiconductor devices includes forming a plurality of lines arranged in a direction over a semiconductor substrate, forming mask patterns over the semiconductor substrate wherein the mask patterns intersect the lines, and forming junctions in the semiconductor substrate between the lines by performing an ion implantation process. | 05-17-2012 |
| 20120120746 | SEMICONDUCTOR MEMORY APPARATUS - A semiconductor memory apparatus may comprise: an input buffer block configured to receive a write signal and a reference level signal, compare a the write signal with a the reference level signal to generate a first write control signal, and delay the first write control signal by a predetermined time to generate a second write control signal; a first decoder block configured to combine the second write control signal inputted from the input buffer block with externally inputted command signals, and generate a first write command signal; a clock control block configured to generate a clock control signal for determining determine a level of an internal clock signal in response to a level of the first write control signal outputted from the input buffer block; and a write signal control block configured to generate an internal write command signal according to a level of the first write command signal inputted from the first decoder block and the clock control signal inputted from the clock control block. | 05-17-2012 |
| 20120120744 | METHOD FOR SYNCHRONIZING SIGNALS AND PROCESSING DATA - A method for synchronizing signals includes the steps of receiving a preamble of a data strobe signal in response to a write preamble command, and synchronizing the data strobe signal with a clock signal through the preamble of the data strobe signal. | 05-17-2012 |
| 20120120743 | SEMICONDUCTOR MEMORY APPARATUS AND SEMICONDUCTOR SYSTEM INCLUDING THE SAME - A semiconductor memory apparatus includes a shared pad which is configured to output a read operation control signal in a read operation and receive a write operation control signal in a write operation. | 05-17-2012 |
| 20120120737 | REPAIR CIRCUIT AND CONTROL METHOD THEREOF - A semiconductor memory apparatus including a repair circuit may comprise: a fuse set block configured to store a repair address, compare the repair address with an input address, and generate a primary repair signal; and a redundancy control block configured to receive the primary repair signal, determine whether a repair cell in a repair memory designated by the primary repair signal is failed or not, and generate a secondary repair signal which repair the failed repair cell with another repair cell in the repair memory. | 05-17-2012 |
| 20120120725 | SEMICONDUCTOR MEMORY DEVICE AND METHOD OF OPERATING THE SAME - A method of operating a semiconductor memory device includes a memory array having memory cell strings including a first and a second memory cell groups having memory cells, a first and a second dummy elements, a drain select transistor and a source select transistor, wherein the first memory cell group and the second memory cell group are arranged between the drain select transistor and the source select transistor; connecting electrically the first memory cell group to the second memory cell group during a program operation or a read operation of the first memory cell group or the second memory cell group; and performing separately an erase operation of the first memory cell group and an erase operation of the second memory cell group, selecting simultaneously one of the first dummy element and the second dummy element during the erase operation of the selected memory cell group. | 05-17-2012 |
| 20120120707 | SEMICONDUCTOR DEVICE WITH OTP MEMORY CELL - A semiconductor device with an OTP memory cell includes a first MOS transistor having a first gate terminal connected to a first line, and a first terminal connected to a first node, a second MOS transistor having a second gate terminal connected to a second line, and a first terminal connected to the first node, and a third MOS transistor having a gate terminal connected to a three line, and a first terminal of the third MOS transistor connected to the first node. | 05-17-2012 |
| 20120120290 | IMAGE SENSING DEVICE AND METHOD FOR OPERATING THE SAME - An image sensing device includes, inter alia, a ramp signal generation unit generating a ramp signal that decreases during first and second periods for finding data values corresponding to a pixel signal and an offset value, respectively. The image sensing device also includes a comparison unit compares the pixel signal with the ramp signal during the first period, and compares the ramp signal with an internally generated offset value during the second period. A first counting unit is configured to perform a counting operation during the first period, and a second counting unit configured to latch a count value of the first counting unit as a data value in response to the result of the first comparison operation during the first period, perform a down-count operation from the latched data value in response to the result of the second comparison operation during the second period, and latch a counting result. | 05-17-2012 |
| 20120119815 | SWITCHING CIRCUIT OF SEMICONDUCTOR APPARATUS - A switching circuit of a semiconductor apparatus includes a first switching unit configured to substantially prevent a leakage current applied from an outside and simultaneously switch a first signal with a first high voltage bias level, and a second switching unit configured to switch a second signal with a second high voltage bias according to the first high voltage bias level. The first switching unit and the second switching unit are selectively switched by a first enable signal and a second enable signal, which are applied from an outside, to generate a global bias signal. | 05-17-2012 |
| 20120119809 | CLOCK CONTROL CIRCUIT AND SEMICONDUCTOR MEMORY APPARATUS USING THE SAME - An internal clock frequency control circuit of a semiconductor memory apparatus includes a mode register set configured to receive a mode register set control signal and output a mode register set signal; a delay unit configured to generate an enable signal when a predetermined cycle has elapsed after the mode register set signal was activated; a division command decoder configured to receive and decode a synchronization command to generate a division start signal when the enable signal is activated; and a division selection unit configured to receive an input clock having a first frequency and output a selection clock having a second frequency, wherein a value of the second frequency is substantially the same as the first frequency or lower than the first frequency depending on a level of the division start signal. | 05-17-2012 |
| 20120119806 | DATA OUTPUT CIRCUIT - A data output circuit includes an output control signal generation unit configured to generate output control signals in response to an output enable bar signal and a delay locked clock signal and a register configured to output stored data in response to the output control signals. | 05-17-2012 |
| 20120119764 | TEST MODE CONTROL CIRCUIT OF SEMICONDUCTOR APPARATUS AND CONTROL METHOD THEREOF - Various embodiments of a test mode control circuit of a semiconductor apparatus and related methods are disclosed. In one exemplary embodiment, the test mode control circuit may include: a test mode control block configured to generate a plurality of control signal sets in response to a first address signal set and a second address signal set which are sequentially inputted; a test mode transfer block configured to transfer a plurality of test mode signals, which are generated according to a combination of the plurality of control signal sets, to a plurality of circuit blocks of the semiconductor apparatus; and a plurality of global lines configured to transmit the plurality of control signal sets to the test mode transfer block. | 05-17-2012 |
| 20120119357 | SEMICONDUCTOR APPARATUS - A semiconductor apparatus having stacked first and second chips includes a first through line of the first chip configured to receive a first coding signal and be electrically connected to a first through line of the second chip; a second through line of the first chip configured to receive a second coding signal; and a second through line of the second chip configured to be electrically connected to the first through line of the first chip and receive the first coding signal. | 05-17-2012 |
| 20120119320 | DIODE FOR ADJUSTING PIN RESISTANCE OF A SEMICONDUCTOR DEVICE - A diode comprises a P-type well formed in a semiconductor substrate, at least one N-type impurity doping area formed in the P-type well, an isolation area formed to surround the N-type impurity doping area, a P-type impurity doping area formed to surround the isolation area, first contacts formed in the N-type impurity doping area in a single row or a plurality of rows, and second contacts formed in the P-type impurity doping area in a single row or a plurality of rows, wherein pin resistance can be adjusted through changing any one of a distance between the N-type impurity doping area and the P-type impurity doping area, a contact pitch between the first contacts, and a contact pitch between the second contacts. | 05-17-2012 |
| 20120119285 | SEMICONDUCTOR DEVICE AND METHOD FOR MANUFACTURING THE SAME - A semiconductor device and a method for manufacturing the same are disclosed, which can form a gate electrode material only in a recess of a buried gate cell structure, improve a Gate Induced Drain Leakage (GIDL) of a gate electrode material and a junction (i.e., drain region), prevent the gate electrode material from overlapping with the junction (i.e., drain region), and adjust the depth of junction, thereby improving channel resistance. The method for manufacturing a semiconductor device includes forming a device isolation region defining an active region over a semiconductor substrate, burying a gate electrode material in the semiconductor substrate, forming a gate electrode pattern by etching the gate electrode material, wherein the gate electrode pattern is formed at sidewalls of the active region including a source region, and forming a capping layer in the exposed active region. | 05-17-2012 |
| 20120119209 | SEMICONDUCTOR DEVICES AND METHOD OF MANUFACTURING THE SAME - A semiconductor device includes isolation layers arranged in a memory array region and a monitoring region, wherein the isolation layers are positioned in parallel; gate lines arranged to cross the isolation layers in the memory array region, wherein the gate lines are formed in the memory array region; dummy gate lines arranged in a substantially same direction as the isolation layers in the monitoring region, wherein the dummy gate lines are formed in the monitoring region; monitoring junctions arranged between the dummy gate lines and in a substantially same direction as the dummy gate lines, wherein the monitoring junctions are arranged in the monitoring region; and spacers arranged on sidewalls of each of the gate lines and the dummy gate lines, wherein at least one of the monitoring junctions is covered by any one of the spacers. | 05-17-2012 |
| 20120119208 | SEMICONDUCTOR APPARATUS AND FABRICATING METHOD THEREOF - A semiconductor apparatus includes a semiconductor chip formed on a predetermined area of a wafer, wafer test block formed on an area outside the predetermined area, and signal line for electrically connecting the semiconductor chip to the wafer test block. Through-silicon via is formed to vertically penetrate the signal line. | 05-17-2012 |
| 20120119090 | READOUT INTEGRATED CIRCUIT FOR INFRARED SIGNAL AND METHOD OF READING OUT INFRARED SIGNAL - There is provided a readout integrated circuit for an infrared signal that is able to operate at low power and reduce a pixel pitch without the use of a skimming capacitor. | 05-17-2012 |
| 20120119067 | IMAGE SENSING DEVICE FOR FAST SIGNAL PROCESSING - An image sensing device includes a first circuit unit configured to convert an image signal provided from a first pixel into a digital value and generate first image data, a second circuit unit configured to convert an image signal provided from a second pixel into a digital value and generate second image data, and a processing unit configured to receive the first image data and the second image data at a substantially same time and sequentially output the first image data and the second image data according to a predetermined speed. | 05-17-2012 |
| 20120118495 | SUBSTRATE FOR SEMICONDUCTOR PACKAGE, METHOD FOR MANUFACTURING THE SAME, AND SEMICONDUCTOR PACKAGE HAVING THE SAME - A method for manufacturing a substrate for a semiconductor package includes the steps of attaching first and second insulation layers which have first surfaces and second surfaces and are formed with conductive layers on the first surfaces, by the medium of a release film which has adhesives attached to both surfaces thereof, such that the second surfaces of the first and second insulation layers face each other; forming first conductive patterns on the first surfaces of the first and second insulation layers by patterning the conductive layers; forming solder masks on the first surfaces of the first and second insulation layers including the first conductive patterns to open portions of the first conductive patterns; and separating the first and second insulation layers from each other by removing the release film. | 05-17-2012 |
| 20120115320 | SEMICONDUCTOR DEVICE HAVING DECREASED CONTACT RESISTANCE AND METHOD FOR MANUFACTURING THE SAME - A semiconductor device includes a first plug formed on a semiconductor substrate and exposed on side and upper surfaces of an upper part thereof and a second plug formed on the first plug to contact the exposed side and upper surfaces of the upper part of the first plug. | 05-10-2012 |
| 20120115278 | STACKED SEMICONDUCTOR PACKAGE WITHOUT REDUCTION IN DATA STORAGE CAPACITY AND METHOD FOR MANUFACTURING THE SAME - A stacked semiconductor package includes a semiconductor chip module including at least two semiconductor chips with a semiconductor chip body having an upper surface, a lower surface, side surfaces coupling the upper surface and the lower surface, and a circuit part. The semiconductor chips include pads coupled to the circuit part and disposed at an edge of the upper surface. A recess parts are concavely formed in the side surfaces corresponding to each pad. Conductive connection patterns cover the recess parts, and each conductive connection pattern is electrically connected to a corresponding bonding pad. The is semiconductor chip module is disposed on a substrate, and the contact pads of the semiconductor substrate are electrically connected to the conductive connection patterns. The stacked semiconductor package provides an improved structure that can contain a plurality of stacked semiconductor chips with no reduction in data storage capacity. | 05-10-2012 |
| 20120113728 | DATA INPUT CIRCUIT - A data input circuit includes a clock sampling unit, a final clock generation unit, and a write latch signal generation unit. The sampling unit is configured to generate a shifting signal including a pulse generated after a write latency is elapsed, and generate a sampling clock by sampling an internal clock during a burst period from substantially a time when the pulse of the shifting signal is generated. The final clock generation unit is configured to generate a level signal by latching the shifting signal in synchronization with the sampling clock and generate a final clock from the level signal in response to a burst signal. The write latch signal generation unit is configured to generate an enable signal by latching the final clock and generate a write latch signal for latching and outputting aligned data in response to the enable signal. | 05-10-2012 |
| 20120113720 | SEMICONDUCTOR MEMORY DEVICE AND ERASE METHOD THEREOF - A semiconductor memory device includes a plurality of memory blocks configured to include memory cells, a voltage supply circuit configured to supply an erase voltage for an erase operation of a memory block selected from the memory blocks and supply an erase verify voltage and an erase pass voltage for an erase verify operation of the memory block selected from the memory blocks, and a control logic configured to group word lines per specific word lines, when the erase verify operation for the selected memory block is performed, and control the voltage supply circuit so that one or more of the erase verify voltage and the erase pass voltage rise whenever the erase verify operation is performed. | 05-10-2012 |
| 20120112940 | ANALOG TO DIGITAL CONVERTER - An analog to digital converter (ADC) includes a clock control unit supplying a predetermined clock signal corresponding to luminance among a plurality of clock signals having different frequencies; and a signal conversion unit comparing a ramp signal with an inputted pixel signal to generate a comparison result signal. The ADC performs counting corresponding to the predetermined clock signal supplied by the clock control unit and stores a count value counted at a time of the generating of the comparison result signal. | 05-10-2012 |
| 20120112805 | PHASE-FREQUENCY DETECTOR - A phase-frequency detector includes an up signal generating unit and a down signal generating unit. The up signal generating unit is configured to evaluate a first node to generate an up signal, precharge the first node in response to a first clock, and reset the first node in response to the first clock, the up signal, and a down signal. The down signal generating unit is configured to evaluate a second node to generate a down signal, precharge the second node in response to a second clock, and reset the second node in response to the second clock, the up signal, and the down signal. | 05-10-2012 |
| 20120112360 | SEMICONDUCTOR CHIP, STACKED SEMICONDUCTOR PACKAGE HAVING THE SAME, AND METHOD FOR MANUFACTURING STACKED SEMICONDUCTOR PACKAGE - A semiconductor chip includes a semiconductor chip body including a peripheral region, a first region and a second region, and having a plurality of memory banks formed in each of the first region and the second region; a plurality of first through electrodes formed in the peripheral region; and a plurality of second through electrodes formed in the first and second regions along a direction parallel to a minor axis of the semiconductor chip body. | 05-10-2012 |
| 20120112349 | SEMICONDUCTOR DEVICE - A semiconductor device is disclosed, which reduces the depth of a metal contact so that an etching margin is increased in forming a contact hole. In addition, the semiconductor device and the method for forming the same increase a contact area between a plate electrode and a metal contact so that a power source can be more easily provided to the plate electrode. Thus, a sensing noise is reduced and a process margin is improved, resulting in improvement of device operation characteristics. | 05-10-2012 |
| 20120112342 | SEMICONDUCTOR DEVICE AND STACKED SEMICONDUCTOR PACKAGE - A semiconductor device includes a first structural body having a first surface and a second surface which faces away from the first surface, and formed with first electrode pads on the first surface, a stress buffer layer formed on the first electrode pads and the first surface of the first structural body, and having a plurality of holes which expose the first electrode pads, and a plurality of bumps formed to be electrically connected with the first electrode pads through the plurality of holes, wherein the plurality of bumps include first bumps which are filled in corresponding holes of the plurality of holes and second bumps which are formed on the first bumps and the stress buffer layer and are disposed over the first electrode pads and portions of the first surface outside the first electrode pads. | 05-10-2012 |
| 20120112339 | SEMICONDUCTOR DEVICE - A semiconductor device and a method of forming the same are disclosed, which forms a low-dielectric-constant oxide film only at a peripheral part of a bit line conductive material, resulting in reduction in parasitic capacitance of the bit line. The semiconductor device includes a bit line formed over a semiconductor substrate, a first spacer formed over sidewalls of the bit line, and a second spacer formed over sidewalls of the first spacer, configured to have a dielectric constant lower than that of the first spacer. | 05-10-2012 |
| 20120112270 | VERTICAL TRANSISTOR HAVING BURIED JUNCTION AND METHOD FOR MANUFACTURING THE SAME - A buried junction is formed in a vertical transistor of a semiconductor device. Wall bodies are formed from a semiconductor substrate, the wall bodies protruding while having a first side surface and a second side surface in the opposite side of the first side surface; forming a one side contact mask having an opening which selectively opens a portion of the first side surface of the wall body; and forming a first impurity layer and a second impurity layer surrounding the first impurity layer by diffusing impurities having different diffusivities into the portion of the first side surface exposed to the opening. | 05-10-2012 |
| 20120112269 | SEMICONDUCTOR DEVICE AND METHOD OF MANUFACTURING THE SAME - A technology is a semiconductor device and a method of manufacturing the same, capable of reducing capacitance with a storage node contact plug while maintaining a height and resistance of a bit line, by thickly forming a spacer between a bit line and the storage node contact plug. A semiconductor device includes a device isolation layer defining a plurality of active regions formed in a semiconductor substrate, a storage node contact hole exposing two neighboring active regions, a storage node contact plug material provided in the storage node contact hole, a bit line region that divides the storage node contact plug material into two parts and that has a convex portion at a lower portion of a sidewall, a spacer formed over a sidewall of the bit line region including the convex portion and a bit line formed in the bit line region. | 05-10-2012 |
| 20120112041 | METHOD AND SYSTEM FOR AN IMAGE SENSOR CAPABLE OF PERFORMING SELECTIVE ANALOG BINNING OPERATION - Provided is an image sensor including a plurality of sampling units, a plurality of signal lines connected to an amplification unit; and a plurality of first switches positioned between the plurality of sampling units and the plurality of signal lines, connecting a plurality of sampling units to the plurality of signal lines when performing analog binning operation, and connecting one of the plurality of sampling units to one of the signal lines when performing a general operation. | 05-10-2012 |
| 20120112040 | IMAGE SENSOR - There is provided an image sensor, including an input control unit configured to control signal paths between a plurality of pixels and a plurality of sampling units and supplying outputs from the plurality of pixels in row units to the plurality of sampling units during a normal operation, while supplying the outputs from the plurality of pixels by color, to the plurality of sampling units during a binning operation; and an output control unit configured to control signal paths between the plurality of sampling units and an amplification unit and sequentially supplying outputs from the plurality of sampling units to the amplification unit during the normal operation while simultaneously supplying the outputs from the plurality of sampling units to the amplification unit during the binning operation. | 05-10-2012 |
| 20120110401 | SYSTEM AND METHOD OF SENSING DATA IN A SEMICONDUCTOR DEVICE - A semiconductor memory apparatus includes: a first data counting unit configured to count respective programming levels of a plurality of input data and output a plurality of first data counting codes having a code value corresponding to the number of respective programming levels; a data read unit configured to sense data stored in a memory block having the plurality of input data programmed therein, based on a voltage level of a plurality of read bias signals, and output the sensed result as a plurality of output data; a second data counting unit configured to count respective programming levels of the plurality of output data and output a plurality of second data counting codes having a code value corresponding to the number of respective programming levels; a read bias control unit configured to compare the plurality of first data counting codes with the plurality of second data counting codes and output a bias control code having a code value corresponding to the comparison result; and a read bias generating unit configured to generate the plurality of read bias signals whose voltage levels are adjusted based on the code value of the bias control code. | 05-03-2012 |
| 20120110398 | DATA ERROR CHECK CIRCUIT, DATA ERROR CHECK METHOD, DATA TRANSMISSION METHOD USING DATA ERROR CHECK FUNCTION, SEMICONDUCTOR MEMORY APPARATUS AND MEMORY SYSTEM USING DATA ERROR CHECK FUNCTION - Various embodiments of a memory system are disclosed. In one exemplary embodiment, the memory system may include a semiconductor memory apparatus configured to generate error check signals in a column direction and a row direction of data groups to be transmitted through a plurality of data input/output terminals in a read operation and output the error check signals together with the data groups, and a memory controller configured to control data read/write operations of the semiconductor memory apparatus, generate error check signals by performing error check in a column direction and a row direction of data groups to be transmitted in a write operation, and provide the error check signals to the semiconductor memory apparatus together with the data groups. | 05-03-2012 |
| 20120108070 | METHOD FOR FORMING SEMICONDUCTOR DEVICE - A method for forming a semiconductor device is disclosed. A method for forming a semiconductor device includes forming a first hard mask layer over a semiconductor substrate including a cell region and a peripheral circuit region, forming a spacer pattern over the first hard mask layer of the cell region, forming a cell-open mask pattern over the peripheral circuit region, forming a first hard mask pattern by etching the first hard mask layer using the spacer pattern of the cell region as an etch mask, forming a second hard mask layer over the first hard mask pattern of the cell region and a first hard mask layer of the peripheral circuit region, forming a cutting mask pattern over the second hard mask layer; and forming an active region in the cell region and a device isolation region in the peripheral circuit region by etching the second hard mask layer, the first hard mask pattern of the cell region, the first hard mask layer of the peripheral circuit region, and the semiconductor substrate using the cutting mask pattern as an etch mask. | 05-03-2012 |
| 20120106279 | SEMICONDUCTOR MEMORY APPARATUS, MEMORY SYSTEM, AND PROGRAMMING METHOD THEREOF - Various embodiments of a semiconductor memory apparatus are disclosed. In one exemplary embodiment, the semiconductor memory apparatus includes a core block configured to receive and store external input data, a control unit configured to activate a control signal in response to a test mode signal and a command, when the external input data has a predetermined value, and a fuse circuit configured to perform fuse programming when the control signal is activated. | 05-03-2012 |
| 20120106276 | DATA STROBE SIGNAL GENERATION CIRCUIT - A data strobe signal generation circuit includes: an enable signal generation unit configured to decode a test signal and generate an enable signal; an internal clock generation unit configured to generate a rising clock signal and a falling clock signal in response to the test signal; and a data strobe signal output unit configured to selectively buffer first and second powers in response to the rising clock signal and the falling clock signal, and output a data strobe signal. | 05-03-2012 |
| 20120106274 | SEMICONDUCTOR MEMORY APPARATUS - A semiconductor memory apparatus includes a data input enable signal generation block configured to sequentially delay a data strobe signal to generate a first delayed data strobe signal, a second delayed data strobe signal, a third delayed data strobe signal and a fourth delayed data strobe signal, and generate a data strobe enable signal in response to a CAS write signal, a CAS write latency signal and the first to fourth delayed data strobe signals, a latch control signal generation block configured to output the data strobe signal as a latch control signal during an enable period of the data strobe enable signal, and a data latch block configured to latch data in response to the latch control signal and output latched data. | 05-03-2012 |
| 20120106273 | SEMICONDUCTOR MEMORY APPARATUS - Various embodiments of a semiconductor memory apparatus are disclosed. In one exemplary embodiment, the semiconductor memory apparatus may include: a column control signal generator configured to generate a column control signal for a pair of bit lines corresponding to a data mask during a data mask operation; and a bit line sense amplifier configured to sense and amplify a voltage difference between the pair of bit lines and electrically couple the pair of bit lines to a pair of segment input/output lines in response to the column control signal. | 05-03-2012 |
| 20120106271 | SEMICONDUCTOR MEMORY APPARATUS - Various embodiments of a semiconductor memory apparatus are disclosed. In one exemplary embodiment, the semiconductor memory apparatus may include: a redundancy signal generation unit configured to compare mat information set by fuse cutting with address information inputted from outside and generate a plurality of redundancy signals; a mat designation signal generation unit configured to generate a plurality of mat designation signals in response to the plurality of redundancy signals and a plurality of mat address signals; and a mat control signal generation group configured to enable one of the mat control signals in response to the plurality of mat designation signals. | 05-03-2012 |
| 20120106267 | CIRCUIT FOR GENERATING REFERENCE VOLTAGE OF SEMICONDUCTOR MEMORY APPARATUS - A reference voltage generating circuit in a semiconductor memory apparatus comprises a driving control signal generating unit configured to generate a driving control signal according to a temperature variation, wherein the driving control signal generating unit is enabled in response to a power-up signal, a driving unit configured to control a voltage level, which is applied to a voltage transfer node, in response to the power-up signal and the driving control signal, and a reference voltage generating unit configured to generate a reference voltage when a voltage level on the voltage transfer node is higher than a predetermined voltage level. | 05-03-2012 |
| 20120106263 | INPUT/OUTPUT CIRCUIT AND METHOD OF SEMICONDUCTOR APPARATUS AND SYSTEM WITH THE SAME - A system includes a controller which is capable of operating at one of a first speed and a second speed slower than the first speed; a semiconductor memory apparatus operating at the first speed; and an input/output device which is connected between the semiconductor memory apparatus and the controller, and configured to control input/output of signals between the controller and the semiconductor memory apparatus, wherein the input/output device operates in a normal mode which corresponds to the input/output of the signals between the controller operating at the first speed and the semiconductor memory apparatus and a test mode which corresponds to the input/output of the signals between the controller operating at the second speed and the semiconductor memory apparatus. | 05-03-2012 |
| 20120106262 | PROGRAMMING METHOD FOR NONVOLATILE MEMORY APPARATUS - Provided is a method for programming a nonvolatile memory apparatus which includes a bit line selector coupled to first and second bit lines and a page buffer including a main data transmission switch coupled to the bit line selector, a first latch coupled to the main data transmission switch, a temporary data transmission switch coupled to the bit line selector, and a second latch coupled between the temporary data transmission switch and the first latch. In the programming when the first bit line is precharged to a power supply voltage level, a main data transmission switch and a temporary data transmission switch are simultaneously turned on to set up a voltage of the second bit line depending on data levels stored in the first and second latches. | 05-03-2012 |
| 20120106243 | CURRENT CONTROL APPARATUS AND PHASE CHANGE MEMORY HAVING THE SAME - A current control apparatus of a phase change memory includes a temperature sensing block having an output voltage level which varies depending on temperature of an internal circuit and a write driver configured to control an amount of program current provided to a memory cell in response to the output voltage level of the temperature sensing block. | 05-03-2012 |
| 20120106242 | MEMORY APPARATUS HAVING STORAGE MEDIUM DEPENDENT ON TEMPERATURE AND METHOD FOR DRIVING THE SAME - A memory apparatus includes a temperature detection block configured to detect temperature of an internal circuit and output a temperature detection signal, a current control block configured to receive the temperature detection signal and generate a pulse control signal, and a write driver configured to provide a program pulse having a compensated level and width to a memory cell in response to the pulse control signal. | 05-03-2012 |
| 20120106224 | NONVOLATILE MEMORY APPARATUS, REPAIR CIRCUIT FOR THE SAME, AND METHOD FOR READING CODE ADDRESSABLE MEMORY DATA - A nonvolatile memory apparatus includes: a memory cell array including a plurality of planes and configured to store a plurality of code addressable memory (CAM) data in independent planes. A redundancy cell array is configured to replace the memory cell array and a CAM data read unit is configured to read the plurality of CAM data from the respective planes in parallel, in response to a CAM data read command, and store the read data. | 05-03-2012 |
| 20120105680 | SOC STRUCTURE OF VIDEO CODEC-EMBEDDED IMAGE SENSOR AND METHOD OF DRIVING IMAGE SENSOR USING THE SAME - A system on chip (SoC) structure of a video codec-embedded image sensor and a method of driving an image sensor using the same are provided. The image sensor includes a first domain including a codec processing unit processing image data using a video codec and a core processor, a second domain including an image sensor pixel and an analog-to-digital converter (ADC), a third domain including an image signal processor (ISP) performing signal processing on the image data obtained from the second domain, a fourth domain including a formatter converting a data format of the data generated in the first to third domains to the outside, an a clock generation unit providing system clocks to the first to fourth domains, respectively. | 05-03-2012 |
| 20120105648 | DEAD PIXEL COMPENSATION TESTING APPARATUS - A dead pixel compensating apparatus includes, inter alia, a pattern generation unit generating a programmable test pattern including data with respect to at least one dead pixel; a register array storing the test pattern; a dead pixel compensation unit receiving the test pattern stored in the register array and performing a dead pixel compensation algorithm to output compensation data; and a determination unit comparing the test pattern and the compensation data to determine whether or not the dead pixel compensation algorithm has an error, wherein a dead pixel compensation algorithm for compensating for a dead pixel of an image sensor in image data supplied from the image sensor is tested. | 05-03-2012 |
| 20120105156 | RECEIVER CIRCUIT OF SEMICONDUCTOR APPARATUS AND METHOD FOR RECEIVING SIGNAL - A receiver circuit of a semiconductor apparatus includes a first sense amplifier, a level restriction unit, and a second sense amplifier. The first sense amplifier amplifies an input signal in response to a clock signal and generates a first signal with a voltage swing between a first level and a second level. The level restriction unit receives the first signal and generates a correction signal with a voltage swing between the first level and a third level. The second sense amplifier amplifies the correction signal in response to the clock signal and generates a second signal with the voltage swing between the first level and the second level. | 05-03-2012 |
| 20120105142 | SEMICONDUCTOR APPARATUS AND METHOD OF TRIMMING VOLTAGE - A semiconductor apparatus includes: a master chip and at least one slave chip configured to be stacked one on top of another; and a through-silicon via (TSV) configured to penetrate and electrically couple the master chip and the at least one slave chip, wherein the at least one slave chip receives a reference voltage generated from the master chip via the TSV and independently trims the reference voltage and then generates an internal voltage with the trimmed reference voltage. | 05-03-2012 |
| 20120105124 | SEMICONDUCTOR APPARATUS, METHOD FOR DELAYING SIGNAL THEREOF, STACKED SEMICONDUCTOR MEMORY APPARATUS, AND METHOD FOR GENERATING SIGNAL THEREOF - The semiconductor apparatus includes a reference delay value check unit configured to receive a source signal and delay the source signal to generate a reference delay signal; a process delay value check unit configured to receive the source signal and delay the source signal to generate a process delay signal; and a signal generation unit configured to receive the reference delay signal and the process delay signal, receive an input signal, and variably delay the input signal based on the reference delay signal and the process delay signal to generate an output signal. | 05-03-2012 |
| 20120105122 | DUTY CYCLE CORRECTION CIRCUIT OF SEMICONDUCTOR MEMORY APPARATUS - A duty cycle correction circuit of a semiconductor memory apparatus includes a duty correction unit configured to determine a duty correction range in response to a duty correction range control signal, correct a duty of an inputted clock in response to duty correction codes to fall in the determined duty correction range, and generate a duty corrected clock; a duty detection unit configured to detect a duty of the duty corrected clock and output duty information; and a duty correction code generation unit configured to generate the duty correction codes based on the duty information. | 05-03-2012 |
| 20120105100 | IMPEDANCE CALIBRATION CIRCUIT AND SEMICONDUCTOR APPARATUS USING THE SAME - An impedance calibration circuit includes: a first calibration unit configured to compare a first converted voltage obtained by converting a first calibration signal with a reference voltage and vary the first calibration signal; a voltage detection unit configured to activate a voltage detection signal according to a level of a power supply voltage; a multiplexing unit configured to select and output the reference voltage or the first converted voltage in response to the detection signal; and a second calibration unit configured to compare a second converted voltage obtained by converting a second calibration signal with the level of the output signal of the multiplexing unit and vary the second calibration signal. | 05-03-2012 |
| 20120105093 | SEMICONDUCTOR APPARATUS AND METHOD OF TESTING AND MANUFACTURING THE SAME - A semiconductor apparatus includes: a semiconductor chip, wherein a conductive layer is formed at one side of the semiconductor chip and one or more of probe pads are formed at the other side thereof; a plurality of through-silicon vias (TSVs), wherein one side of each of the plurality of TSVs is coupled to the conductive layer and the other side of one or more of the plurality of TSVs is coupled to the probe pad; a plurality of latch units each configured to be assigned to the plurality of corresponding TSVs and store a test signal, wherein the test signal is inputted via the probe pad and is transferred via the plurality of corresponding TSVs to the plurality of assigned latch units, respectively; and a signal combination unit configured to combine a plurality of signals stored in the plurality of latch units to output the result as an error detection signal. | 05-03-2012 |
| 20120104617 | SEMICONDUCTOR DEVICE AND METHOD FOR MANUFACTURING THE SAME - A semiconductor device and a method for manufacturing the same are disclosed. A dummy pattern is formed between a fuse pattern and a semiconductor substrate so as to prevent the semiconductor substrate from being damaged, and a buffer pattern is formed between the dummy pattern and the semiconductor substrate, so that a dummy metal pattern primarily absorbs or reflects laser energy transferred to the semiconductor substrate during the blowing of the fuse pattern, and the buffer pattern secondarily reduces stress generated between the dummy pattern and the semiconductor substrate, resulting in the prevention of a defect such as a crack. | 05-03-2012 |
| 20120104489 | SEMICONDUCTOR DEVICE WITH VERTICAL GATE AND METHOD FOR FABRICATING THE SAME - A semiconductor device includes a substrate; a plurality of active pillars formed over the substrate; bulb-type trenches, each of the bulb-type trenches formed inside the substrate between the active pillars; buried bit lines, each of the buried bit lines being formed on a sidewall of a respective one of the bulb-type trenches; and vertical gates, each of the vertical gates being formed to surround a sidewall of a respective one of the active pillars. | 05-03-2012 |
| 20120104388 | THREE-DIMENSIONAL STACKED SEMICONDUCTOR INTEGRATED CIRCUIT AND TSV REPAIR METHOD THEREOF - Provided is a | 05-03-2012 |
| 20120104232 | IMAGE SENSOR HAVING SUB-SAMPLING FUNCTION - An image sensor includes, inter alia, a pixel array, read-out circuit blocks, and switching units. The pixel array includes unit pixels arranged in rows and columns. Two or more read-out circuit blocks sample, amplify, and perform analog-to-digital conversion on unit pixel data to read image data of the pixel array. The switching units establish connection between column lines of the pixel array and the read-out circuit blocks. The switching units establish connection between the column lines of the pixel array and the read-out circuit blocks such that data of all of the sampled pixels in a sub-sampling mode is processed by less than all of the read-out circuit blocks. | 05-03-2012 |
| 20120100714 | Method of Fabricating a Landing Plug in a Semiconductor Device - A method of fabricating a landing plug in a semiconductor memory device, which in one embodiment includes forming a landing plug contact hole on a semiconductor substrate having an impurity region to expose the impurity region; forming a landing plug by filling the landing plug contact hole with a polysilicon layer, wherein the landing plug is divided into a first region, a second region, a third region, and a fourth region from a lower portion of the landing plug, and the first region is doped with a first doping concentration that is relatively lowest, the second region is doped with a second doping concentration that is higher than the first doping concentration, the third region is doped with a third doping concentration that is higher than the second doping concentration and the fourth region is not doped; and annealing the resulting product formed with the landing plug. | 04-26-2012 |
| 20120100713 | METHOD FOR MANUFACTURING SEMICONDUCTOR DEVICE - A semiconductor device and a method for forming the same are disclosed. In the method for manufacturing the semiconductor device, a lower electrode material is deposited over a semiconductor substrate including a lower electrode contact plug so as to form a sacrificial insulation film. After the sacrificial insulation film and a lower electrode material are etched using a dry etching process, additional lower electrode material is deposited and etched back so as to form a lower electrode. As a result, a margin or region between a lower electrode contact plug and the lower electrode can be guaranteed. | 04-26-2012 |
| 20120100469 | EXPOSURE MASK AND METHOD FOR FORMING SEMICONDUCTOR DEVICE BY USING THE SAME - The present invention is the thing about exposure mask and manufacturing method of semiconductor device using the same | 04-26-2012 |
| 20120099391 | METHOD OF READING DATA IN A NON-VOLATILE MEMORY DEVICE - A method of reading data in a non-volatile memory device compensates for a change in a reading/verifying result in accordance with a change of temperature. The method includes sensing a temperature of a memory cell, setting a first voltage and a second voltage of a bit line sensing signal in accordance with the sensed temperature so that a difference of the first voltage and the second voltage is increased as the temperature increases, precharging a bit line in accordance with the set first voltage, and sensing data of the memory cell in accordance with the set second voltage. The method may read/verify data constantly even though a temperature is changed. | 04-26-2012 |
| 20120099388 | INTERNAL VOLTAGE GENERATOR OF SEMICONDUCTOR MEMORY DEVICE - An internal voltage generator of a semiconductor memory device includes a proportional to absolute temperature (PTAT) current generator configured to generate a PTAT current having a varying current in proportion to a temperature change, a current control circuit configured to generate an internal current identical with the PTAT current and generate an internal voltage based on the internal current, and an offset circuit configured to control the internal voltage to a set voltage level. | 04-26-2012 |
| 20120099386 | SEMICONDUCTOR MEMORY DEVICE AND METHOD OF OPERATING THE SAME - A semiconductor memory device includes memory cells for storing data, page buffers each configured to comprise a dynamic latch and a static latch on which data to be programmed in to the memory cells or data read from the memory cells are latched, and a control logic configured to store a plurality of refresh mode select codes corresponding to various refresh cycles, and refresh the dynamic latch by exchanging data between the static latch and the dynamic latch according to a refresh cycle corresponding to a selected refresh mode select code. | 04-26-2012 |
| 20120098576 | DATA OUTPUT DRIVER AND INTEGRATED CIRCUIT INCLUDING THE SAME - A data output driver includes a pull-up output pre-driver configured to output a plurality of pull-up signals, wherein whether each of the plurality of pull-up signals is enabled is determined in accordance with a driver mode signal, a pull-down output pre-driver configured to output a plurality of pull-down signals, wherein whether each of the plurality of pull-down signals is enabled is determined in accordance with the driver mode signal, and an output driver circuit configured to output data, wherein a driver strength of the output driver circuit is determined in accordance with the pull-up signals and pull-down signals. | 04-26-2012 |
| 20120098141 | SEMICONDUCTOR DEVICE AND METHOD FOR FORMING THE SAME - A semiconductor device and a method for forming the same are disclosed. The semiconductor device includes a semiconductor substrate including an active region defined by a device isolation film, a bit line contact plug that is coupled to the active region and that includes a first ion implantation region buried in a first inner void, and a storage node contact plug that is coupled to the active region and includes a second ion implantation region buried in a second inner void. Although the semiconductor device is highly integrated, a contact plug is buried to prevent formation of a void, so that increase in contact plug resistance is prevented, resulting in improved semiconductor device characteristics. | 04-26-2012 |
| 20120098132 | SEMICONDUCTOR DEVICE AND METHOD OF MANUFACTURING THE SAME - A semiconductor device with a stable structure having high capacitance by changing the pillar type storage node structure and a method of manufacturing the same are provided. The method includes forming a sacrificial layer on a semiconductor substrate including a storage node contact plug, etching the sacrificial layer to form a region exposing the storage node contact plug, forming a first conductive material within an inner side of the region, burying a second conductive material within the region in which the first conductive material is formed, and removing the sacrificial layer to form a pillar type storage node. | 04-26-2012 |
| 20120094462 | SEMICONDUCTOR DEVICE AND METHOD OF FABRICATING THE SAME - A semiconductor device, includes: a first storage node contact plug penetrating a first interlayer insulation layer and partially protruding above the first interlayer insulation layer; a second storage node contact plug contacting the first storage node contact plug that protrudes above the first interlayer insulation layer; a storage node contacting a top surface of the second storage node contact plug; and a second interlayer insulation layer formed over the first interlayer insulation layer, wherein the second interlayer insulation layer surrounds an outer sidewall at a bottom region of the first storage node, and the second storage node contact plug, and wherein the first storage node contact plug protruding above the first interlayer insulation layer and the second storage node contact plug. | 04-19-2012 |
| 20120094451 | Method for Fabricating a Non-volatile Memory Device - A method for fabricating a non-volatile memory device with asymmetric source/drain junctions, wherein a gate stack is formed on a semiconductor substrate, and impurity ions are implanted at a predetermined angle to form a source/drain junction in the semiconductor substrate. Thermal treatment of the semiconductor substrate forms an asymmetrically disposed source/drain junction between adjacent gate stacks. | 04-19-2012 |
| 20120092936 | SEMICONDUCTOR INTEGRATED CIRCUIT DEVICE FOR CONTROLLING A SENSE AMPLIFIER - A semiconductor IC device includes a command decoder that provides internal read and internal write command signals in response to external command signals, and a delay control unit that is connected with the command decoder and provides an internal read command delay signal by controlling an activation timing of the internal read command signal in response to a test mode signal in a read mode. | 04-19-2012 |
| 20120092935 | SEMICONDUCTOR MEMORY DEVICE - A semiconductor memory device includes a first memory device formed on a semiconductor substrate, including a first storage unit, a source, and a drain, a second memory device, including a second storage unit, and a bit line, wherein the second memory device is connected in series between the bit line and the drain. | 04-19-2012 |
| 20120092521 | IMAGE PROCESSING APPARATUS HAVING FUNCTION OF CORRECTING IMAGE BASED ON AMBIENT ILLUMINATION, AND IMAGE PROCESSING METHOD - An image processing apparatus includes: an illumination sensor sensing the intensity of illumination; an image signal processing unit processing an input image signal obtained from an image sensor unit; and a codec unit coding image signal information obtained by the image signal processing unit to obtain a luminance coefficient representing a luminance signal of an image, and adjusting the luminance coefficient according to an ambient intensity of illumination sensed by the illumination sensor. | 04-19-2012 |
| 20120091584 | BUMP FOR SEMICONDUCTOR PACKAGE, SEMICONDUCTOR PACKAGE HAVING BUMP, AND STACKED SEMICONDUCTOR PACKAGE - A bump for a semiconductor package includes: a first bump formed on a semiconductor chip and having at least two land parts and a connection part which connects the land parts and has a line width smaller than the land parts; and a second bump formed on the first bump and projecting on the land parts of the first bump in shapes of a hemisphere. | 04-19-2012 |
| 20120091562 | SEMICONDUCTOR PACKAGE - A semiconductor package includes a substrate having an upper surface and a lower surface which faces away from the upper surface, and possessing a recess which is defined on the upper surface; and a semiconductor chip mounted to the upper surface of the substrate, having one surface which faces the upper surface and the other surface which faces away from the one surface, and warped in a smile shape such that a warped edge portion of the semiconductor chip is inserted into the recess. | 04-19-2012 |
| 20120091557 | ANTI-FUSE OF SEMICONDUCTOR DEVICE AND METHOD FOR MANUFACTURING THE SAME - An anti-fuse of a semiconductor device and a method for manufacturing the same are disclosed. In order to achieve stable operation of the anti-fuse, a gate rupture prevention film is formed between a gate pattern and a source/drain junction region and a gate oxide film is formed at both ends of a lower edge of the gate pattern. Therefore, when applying a voltage, the overlapped gate oxide film is ruptured so that a current level is stabilized and the anti-fuse is stably operated. | 04-19-2012 |
| 20120091554 | SEMICONDUCTOR DEVICE AND METHOD FOR MANUFACTURING THE SAME - A method for manufacturing a semiconductor device comprises: etching a semiconductor substrate to form a trench that defines an active region of a line type; burying an insulating film in the trench; and removing a portion of the active region of a line type to form a separated active region. The method improves the process for forming an active region using a Spacer patterning Technology (SPT), thereby preventing characteristic defects of the device and improving the operating characteristic. | 04-19-2012 |
| 20120088361 | FUSE PART IN SEMICONDUCTOR DEVICE AND METHOD FOR FORMING THE SAME - A fuse part in a semiconductor device has a plurality of fuse lines extended along a first direction with a given width along a second direction. The fuse part includes a first conductive pattern having a space part formed in a fuse line region over a substrate, wherein portions of the first conductive pattern are spaced apart by the space part along the first direction. The fuse part includes a first insulation pattern formed over the space part, the first insulation pattern having a width smaller than a width of the first conductive pattern along the second direction and a thickness greater than a thickness of the first conductive pattern, and a second conductive pattern formed over the first insulation pattern, the second conductive pattern having a width greater than the width of the first insulation pattern along the second direction. | 04-12-2012 |
| 20120088336 | SEMICONDUCTOR PACKAGE HAVING AN IMPROVED CONNECTION STRUCTURE AND METHOD FOR MANUFACTURING THE SAME - A semiconductor package having an improved connection structure and a method for manufacturing the same is described. The semiconductor package includes a substrate having a substrate body, connection pads that are located on one surface of the substrate body, and ball lands that are located on the other surface of the substrate body opposite the one surface. The ball lands are electrically connected to the connection pads. A semiconductor chip having bumps that are formed to correspond to the connection pads is connected to the substrate. An anisotropic conductive member having an insulation element is interposed between the substrate and the semiconductor chip to connect the substrate and the semiconductor chip. Electrically flowable conductive particles within the insulation element flow in the insulation element according to applied electric fields so as to arrange the electrically flowable conductive particles between the connection pads and the bumps. | 04-12-2012 |
| 20120087200 | INTERNAL COLUMN ADDRESS GENERATING CIRCUIT AND SEMICONDUCTOR MEMORY DEVICE - A semiconductor memory device includes first and second bank groups and an internal column address generating circuit. Each of the first and second bank groups includes at least one bank. The internal column address generating circuit converts a column address into a first internal column address and outputs the first internal column address through a first transmission line in response to a bank address if a read operation or a write operation is performed on a bank of the first bank group. Also, the internal column address generating circuit converts the column address into a second internal column address and outputs the second internal column address through a second transmission line in response to the bank address if a read operation or a write operation is performed on a bank of the second bank group. | 04-12-2012 |
| 20120087197 | SEMICONDUCTOR MEMORY APPARATUS AND METHOD FOR CONTROLLING THE SAME - A semiconductor memory apparatus includes: a skew monitoring unit configured to receive a reference voltage and monitor a voltage characteristic of a corresponding MOS transistor; a voltage sensing unit configured to provide a sensing voltage corresponding to the monitoring result of the voltage characteristic; a coding unit configured to multiplex an output signal of the voltage sensing unit and provide a skew control signal; and an internal voltage regulation unit configured to provide an internal voltage by regulating an internal bias voltage in response to the skew control signal. | 04-12-2012 |
| 20120086134 | Method of Forming Patterns of Semiconductor Device - A method of forming patterns of a semiconductor device comprises forming a number of first insulating patterns that define sidewalls by patterning a first insulating layer formed over a semiconductor substrate, forming second insulating patterns, each second insulating pattern comprising a horizontal portion having two ends and being parallel to the semiconductor substrate and spaced protruding portions protruding from both ends of the horizontal portion parallel to the sidewalls of the first insulating patterns, forming third insulating patterns each filling a space between the protruding portions, removing the protruding portions to form trenches, and forming conductive patterns within the respective trenches. | 04-12-2012 |
| 20120086057 | NONVOLATILE MEMORY DEVICE AND METHOD OF MANUFACTURING THE SAME - A semiconductor memory device includes a gate insulating layer formed over a semiconductor substrate; a first conductive layer pattern for select transistors and memory cells formed on the gate insulating layer; a dielectric layer formed on the first conductive layer pattern; a second conductive layer pattern formed on the dielectric layer on the first conductive layer pattern for the memory cells; and select lines made of material having lower resistance than the second conductive layer pattern and coupled to the first conductive layer pattern for the select transistors. | 04-12-2012 |
| 20120083126 | METHOD FOR FORMING SEMICONDUCTOR DEVICE - A method for forming a semiconductor device includes forming a partition line pattern and a partition pad pattern connected to an end part of the partition line pattern over the semiconductor substrate. Spacer insulation layers are formed at sidewalls of the partition line pattern and the partition pad pattern. A gap-filling layer is formed between the spacer insulation layers. A first cutting mask pattern is formed to expose a connecting part between the partition line pattern and the partition pad pattern. The partition line pattern and the gap-filling layer adjacent to the spacer insulation layer are removed using the first cutting mask pattern as a mask. A second cutting mask pattern including a first pattern and a second pattern are formed. The spacer insulation layer is removed using the second cutting mask pattern as a mask to form a gate trench in the substrate. | 04-05-2012 |
| 20120083074 | FLEXIBLE SEMICONDUCTOR PACKAGE AND METHOD FOR FABRICATING THE SAME - A flexible semiconductor package includes a flexible substrate. A data chip is disposed over the flexible substrate. The data chip includes a data storage unit for storing data and first bonding pads that are electrically connected to the data storage unit. A control chip is disposed over the flexible substrate. The control chip includes a data processing unit for processing the data in the data chip and second bonding pads that are electrically connected to the data processing unit. Wirings are formed in order to electrically connect the first bonding pads to the second bonding pads. | 04-05-2012 |
| 20120081988 | SEMICONDUCTOR CIRCUIT AND SEMICONDUCTOR SYSTEM - A semiconductor circuit includes a data driving circuit configured to change a slew rate in response to a control signal and drive data at a changed slew rate, a core/peripheral circuit block configured to provide the data to the data driving circuit, and a channel/memory module information setting unit configured to set the control signal according to channel/memory module information. | 04-05-2012 |
| 20120081985 | SEMICONDUCTOR APPARATUS - A semiconductor apparatus includes: odd and even sub word line driving units configured to selectively drive odd sub word lines and even sub word lines among a plurality of sub word lines; a bit line sense amplifier including a plurality of sense amplifier driving lines which are electrically connected with bit lines; a first sense amplifier driving unit formed on one side of the bit line sense amplifier which extends in the same direction as the bit lines, and configured to drive odd sense amplifier driving lines among the plurality of sense amplifier driving lines; and a second sense amplifier driving unit formed on another side of the bit line sense amplifier which extends in the same direction as the bit lines, and configured to drive even sense amplifier driving lines among the plurality of sense amplifier driving lines according to driving of the even sub word lines. | 04-05-2012 |
| 20120081984 | THREE-DIMENSIONAL STACKED SEMICONDUCTOR INTEGRATED CIRCUIT - Various embodiments of a three-dimensional, stacked semiconductor integrated circuit are disclosed. In one exemplary embodiment, the circuit may include a master slice, a plurality of slave slices, and a plurality of through-silicon vias for connecting the master slice to the plurality of slave slices. At least one of the plurality of through-silicon vias may be configured to transmit an operation control signal from the master slice to the plurality of slave slices. The at least one of the plurality of through-silicon vias is configured to be shared by the plurality of slave slices. | 04-05-2012 |
| 20120081982 | VERIFYING A DATA PATH IN A SEMICONDUCTOR APPARATUS - A semiconductor apparatus includes a memory array configured to store write data transmitted through data transmission lines and transmit stored data to the data transmission line as read data; a data write unit configured to drive the write data to the data transmission lines in response to a data write command; and a data read unit configured to sense the read data transmitted through the data transmission lines in response to a data read command when a data verification signal is deactivated and sense the write data transmitted through the data transmission lines in response to the data write command when the data verification signal is activated. | 04-05-2012 |
| 20120081981 | NONVOLATILE MEMORY APPARATUS WITH CHANGEABLE OPERATION SPEED AND RELATED SIGNAL CONTROL METHOD - Various embodiments of a nonvolatile memory apparatus configured to operate in a first operation mode and a second operation mode are disclosed. In one exemplary embodiment, the apparatus may include: a controller configured to enable complementary signal input/output buffers in response to a command for entry into the first operation mode and disable the complementary signal input/output buffers in response to a command for transition to the second operation mode while operating under the first operation mode. | 04-05-2012 |
| 20120081979 | SEMICONDUCTOR MEMORY APPARATUS - A semiconductor memory apparatus includes a first write control code generation unit configured to generate a first write control code which is updated with different cycles which have different periods, in response to a programming verification flag signal and a programming enable signal, and a data write unit configured to output a first programming current pulse with a magnitude corresponding to a code combination of the first write control code which is updated. | 04-05-2012 |
| 20120081970 | SEMICONDUCTOR MEMORY APPARATUS AND PROGRAM VERIFICATION METHOD - A non-volatile memory apparatus includes a memory cell array, a power supply configured to generate an operation voltage according to an operation mode and provide the memory cell array with the operation voltage, and a controller configured to provide the memory cell array with a first verification voltage and a second verification voltage in a program verification operation, detect a high speed program cell by the first verification voltage and the second verification voltage from selected memory cells to be programmed and set the high speed program cell to be in a program inhibition state, and detect a low speed program cell by the second verification voltage. | 04-05-2012 |
| 20120081961 | NONVOLATILE MEMORY APPARATUS CAPABLE OF REDUCING CURRENT CONSUMPTION AND RELATED DRIVING METHOD - Various exemplary embodiments of a nonvolatile memory apparatus are disclosed. In one exemplary embodiment, the memory apparatus may include: a page buffer; an even bit line connected to the page buffer; an odd bit line connected to the page buffer; an even memory cell string installed on the even bit line; an dd memory cell string installed on the odd bit line; and a bit line select unit configured to selectively generate a signal read path between the even bit line and the even memory cell string or between the odd bit line and the odd memory cell string. | 04-05-2012 |
| 20120081955 | PHASE CHANGE RANDOM ACCESS MEMORY DEVICE - A phase change random access memory device includes: a sense amplifier driving unit configured to compare an input voltage applied through an input signal line with a reference voltage and amplify an output signal in response to the comparison result; an input unit configured to receive an input signal from the input signal line and transmit the received signal to the sense amplifier driving unit; and a coupling prevention unit including a plurality of MOS transistors sharing a bulk bias, coupled between the sense amplifier driving unit and the input unit, and configured to control a sensing margin in response to a level of the input signal. | 04-05-2012 |
| 20120081954 | PHASE CHANGE MEMORY APPARATUS HAVING ROW CONTROL CELL - A semiconductor integrated circuit includes a phase change memory apparatus includes a plurality of row control cells and a plurality of phase change memory cells formed on the row control cells while being electrically connected to the row control cells. The plurality of row control cells and the plurality of phase change memory cells are vertically stacked in a cell array area. | 04-05-2012 |
| 20120081953 | SEMICONDUCTOR MEMORY APPARATUS - A semiconductor memory apparatus includes: a first write control code generation unit configured to generate first write control codes which are updated with different cycles in a plurality of respective periods, in response to a programming verification flag signal and a programming enable signal, the first write control code generation unit determining the number of the plurality of periods depending upon a code value of the repetition times setting codes and an update cycle of the first write control codes in an initial period among the plurality of periods depending upon a code value of initial setting codes; and a data write unit configured to output a first programming current pulse with a magnitude corresponding to a code combination of the first write control codes which are updated. | 04-05-2012 |
| 20120081823 | PROTECTION CIRCUIT OF SEMICONDUCTOR APPARATUS - An internal circuit protection circuit includes a voltage comparison unit and an internal circuit protection unit. The voltage comparison unit is configured to compare an external driving voltage applied from outside with a reference clamp voltage and output a comparison signal. The internal circuit protection unit is configured to adjust a level of the external driving voltage to a lower level than that of the reference clamp voltage, in response to the comparison signal. | 04-05-2012 |
| 20120081175 | INTERNAL VOLTAGE GENERATION CIRCUIT AND SEMICONDUCTOR APPARATUS USING THE SAME - An internal voltage generation circuit includes a voltage detection unit configured to generate a voltage detection signal that indicates whether a voltage level of an internal voltage is a first target voltage level or a second target voltage level higher than the first target voltage level, according to control of a normal operation signal. The internal voltage generation circuit also includes an operation control signal generation unit configured to selectively activate an operation control signal in response to the normal operation signal and the voltage detection signal, a periodic pulse signal generation unit configured to generate a periodic pulse signal in response to the operation control signal and the normal operation signal, and a charge pumping unit configured to generate an internal voltage by performing a charge pumping operation according to control of the periodic pulse signal. | 04-05-2012 |
| 20120081161 | SYNCHRONIZATION CIRCUIT - A synchronization circuit includes a first loop circuit configured to set an initial delay time by using first initial delay information and generate a first delay signal by changing a delay time of a first input signal, a second loop circuit configured to set the initial delay time by using second initial delay information and generate a second delay signal by changing a delay time of a second input signal, a duty cycle correction unit configured to correct a duty cycle of the first delay signal by using the second delay signal, and an initial delay monitoring circuit configured to generate the first initial delay information and the second initial delay information in response to an internal delay signal of the first loop circuit and the first input signal. | 04-05-2012 |
| 20120081160 | DELAY LOCKED LOOP CIRCUIT OF SEMICONDUCTOR MEMORY APPARATUS - Various embodiments of a delay locked loop circuit of a semiconductor memory apparatus are disclosed. In one exemplary embodiment, the delay locked loop circuit may include an input correction unit configured to correct a duty ratio of an input clock based on a duty control signal and generate a reference clock; a delay line configured to delay the reference clock by a delay time and generate a delay locked clock; an output correction unit configured to correct a duty ratio of the delay locked clock based on the duty control signal and generate a corrected clock; and a control signal generation unit configured to generate the duty control signal when a correction activation signal is enabled. | 04-05-2012 |
| 20120081145 | IMPEDANCE CONTROL SIGNAL GENERATION CIRCUIT AND IMPEDANCE CONTROL METHOD OF SEMICONDUCTOR CIRCUIT - An impedance control signal generation circuit includes an impedance control signal generation unit configured to generate an impedance control signal in response to a command, a storage unit configured to latch and output the impedance control signal in response to an update pulse signal, a control unit configured to determine whether the impedance control signal is within a predetermined range and generate an update enable signal according to a determination result, and a prohibition unit configured to control input of the update pulse signal to the storage unit in response to the update enable signal. | 04-05-2012 |
| 20120081144 | CIRCUIT AND METHOD FOR GENERATING ON-DIE TERMINATION SIGNAL AND SEMICONDUCTOR APPARATUS USING THE SAME - Various embodiments of an on-die termination (ODT) signal generating circuit are disclosed. In one exemplary embodiment, the ODT signal generating circuit includes a latency unit and an ODT control signal generating unit. The latency unit is configured to receive a clock signal and an ODT signal. The latency unit is configured to delay the ODT signal by a predetermined time to generate a first ODT signal. The latency unit is also configured to delay the ODT signal by less than the predetermined time to generate a second ODT signal. The ODT control signal generating unit is configured to provide either one of the first and second ODT signals as an ODT control signal in response to a control signal. | 04-05-2012 |
| 20120081100 | SEMICONDUCTOR APPARATUS - A semiconductor apparatus includes a comparison voltage generation unit configured to generate a plurality of different comparison voltages, a reference voltage generation unit configured to receive a generation code from an external system, select one of the plurality of the different comparison voltages according to the generation code, and generate a reference voltage, and a reference voltage determination unit configured to receive the generation code and an expected reference voltage from the external system, check whether a level of the expected reference voltage is in a target range, and output a check result to the external system. | 04-05-2012 |
| 20120080750 | SEMICONDUCTOR INTEGRATED CIRCUIT - A semiconductor integrated circuit includes: a semiconductor substrate comprising a word line decoder region and a memory cell region; a basic word line formed in the memory cell region in a buried gate type; and an additional word line formed to extend from the word line decoder region across the memory cell region, wherein the additional word line is formed over the basic word line in parallel to the basic word line and is coupled to the basic word line through two or more vias. | 04-05-2012 |
| 20120080747 | Semiconductor Device - A vertical transistor of a semiconductor device has a channel area formed in a vertical direction to a semiconductor substrate. After semiconductor poles corresponding to the length of semiconductor channels and gate electrodes surrounding sidewalls of the semiconductor poles are formed, subsequent processes of forming silicon patterns corresponding to junction areas, etc. are performed. The gate electrodes support the semiconductor poles during these subsequent processes. The height of the semiconductor poles corresponding to the length of the channel is increased, yet the semiconductor poles do not collapse or incline since the gate electrodes support the semiconductor poles. | 04-05-2012 |
| 20120080746 | SEMICONDUCTOR DEVICE AND FABRICATION METHOD THEREOF - Disclosed herein is a fabrication method of a semiconductor device to order to increase an operation liability of the semiconductor device. A method for fabricating a semiconductor device comprises forming a recess in a semiconductor substrate, forming a word line in a lower part of the recess, oxidizing a top portion of the word line, and depositing an insulating material in a remained part of the recess. | 04-05-2012 |
| 20120080745 | VERTICAL TRANSISTOR AND METHOD FOR FORMING THE SAME - A vertical transistor includes a semiconductor substrate provided with a pillar type active pattern over the surface thereof. A first tensile layer is formed over the semiconductor substrate and around the lower end portion of the pillar type active pattern, and a second tensile layer is formed over the upper end portion of the pillar type active pattern so that a tensile stress is applied in a vertical direction to the pillar type active pattern. A first junction region is formed within the surface of the semiconductor substrate below the first tensile layer and the pillar type active pattern. A gate is formed so as to surround at least a portion of the pillar type active pattern. A second junction region is formed within the upper end portion of the pillar type active pattern. | 04-05-2012 |
| 20120077337 | METHOD OF MANUFACTURING HIGH-INTEGRATED SEMICONDUCTOR DEVICE AND SEMICONDUCTOR DEVICE MANUFACTURED USING THE SAME - A semiconductor device comprises a plurality of vertical transistors each comprising barrier metal layers corresponding to source/drain regions in which a conduction region is formed under a channel region having a pillar form, and a bit line comprising a metal layer to connect the plurality of vertical transistors. | 03-29-2012 |
| 20120077324 | PHASE CHANGE MEMORY DEVICE ACCOUNTING FOR VOLUME CHANGE OF PHASE CHANGE MATERIAL AND METHOD FOR MANUFACTURING THE SAME - A phase change memory device includes a silicon substrate including a plurality of active regions which extend in a first direction and are arranged at regular intervals in a second direction perpendicular to the first direction. Switching elements are formed in each active region of the silicon substrate and are spaced apart from one another. Phase change patterns are formed in the second direction and have the shape of lines in such that the phase change patterns connect side surfaces of pairs of switching elements which are placed adjacent to each other in a direction diagonal to the first direction. | 03-29-2012 |
| 20120075942 | ROW ADDRESS DECODER AND SEMICONDUCTOR MEMORY DEVICE HAVING THE SAME - A row address decoder includes a first main word line decoding unit decoding first and second row addresses to generate first to fourth main decoding signals. When a data storage test is performed, the first to fourth main decoding signals are enabled at first to fourth timings, respectively. The row address decoder also includes a second main word line decoding unit decoding third and fourth row addresses to generate fifth to eighth main decoding signals. When a data storage test is performed, the fifth to eight to main decoding signals are enabled at first to fourth timings, respectively. A main word line enable signal generating unit decodes the first to fourth main decoding signals and the fifth to eighth main decoding signals to generate first to sixteenth main word line enable signals that are enabled at different times. | 03-29-2012 |
| 20120074575 | COPPER LINE HAVING SELF-ASSEMBLED MONOLAYER FOR ULSI SEMICONDUCTOR DEVICES, AND A METHOD OF FORMING SAME - A copper line having self assembled monolayer for use in ULSI semiconductor devices and methods of making the same are presented. The copper line includes an interlayer dielectric, a self-assembled monolayer, catalytic particles on the monolayer, and a copper layer on the monolayer with the catalytic particles. The method includes the steps of forming an interlayer dielectric on a semiconductor substrate having a metal line forming region; forming a self-assembled monolayer on the metal line forming region; adsorbing catalytic particles on the self-assembled monolayer; forming using an electroless process a copper seed layer on the self-assembled monolayer having the catalytic particles adsorbed thereto; and forming a copper layer on the copper seed layer to fill in the metal line forming region. | 03-29-2012 |
| 20120074529 | SEMICONDUCTOR PACKAGE WITH THROUGH ELECTRODES AND METHOD FOR MANUFACTURING THE SAME - A semiconductor package may include a substrate with a first surface over which bond fingers are formed. At least two semiconductor chips may be stacked on the first surface of the substrate and each chip may have via holes. The semiconductor chips may be stacked such that the respective via holes expose the respective bond fingers of the substrate. Through electrodes may be formed in the via holes. The through electrodes may comprise carbon nanotubes grown from the exposed bond fingers of the substrate, where the through electrodes may be electrically connected with the semiconductor chips. | 03-29-2012 |
| 20120074518 | SEMICONDUCTOR DEVICE AND METHOD OF FABRICATING THE SAME - The invention relates to a semiconductor device, wherein a storage node contact hole is made large to solve any problem caused during etching a storage node contact hole with a small CD, a landing plug is formed to lower plug resistance. A semiconductor device according to the invention comprises: first and second active regions formed in a substrate, the first and second active being adjacent to each other, each of the first and second active regions including a bit-line contact region and a storage node contact region and a device isolation structure; a word line provided within a trench formed in the substrate; first and second storage node contact plugs assigned to the first and second active regions, respectively, the first and second storage node contact plugs being separated from each other by a bit line groove; and a bit line formed within the bit-line groove. | 03-29-2012 |
| 20120074485 | Nonvolatile Memory Device and Manufacturing Method Thereof - A nonvolatile memory device comprises a gate insulating layer, a floating gate and a dielectric layer sequentially formed over a semiconductor substrate, a capping layer formed over the dielectric layer, and a control gate formed over the capping layer, wherein the control gate includes nitrogen or carbon as an additive. | 03-29-2012 |
| 20120074473 | Semiconductor Device - A method for fabricating a semiconductor device comprises forming a partial-insulated substrate comprising an insulating region located below both a channel region of a cell transistor and one of a storage node contact region and a bit line contact region, and forming a cell transistor comprising a fin region on the partial-insulated substrate. | 03-29-2012 |
| 20120068239 | SEMICONDUCTOR MEMORY DEVICE HAVING A FLOATING BODY CAPACITOR, MEMORY CELL ARRAY HAVING THE SAME AND METHOD OF MANUFACTURING THE SAME - A semiconductor memory device having a floating body capacitor. The semiconductor memory device can perform a memory operation using the floating body capacitor. The semiconductor memory device includes an SOI substrate having a staked structure in which a base substrate having a conducting surface, a buried insulating layer and a device-forming layer are staked, a transistor formed in a portion of the device-forming layer, having a gate, a source region and a drain region, and a capacitor formed by the buried insulating layer, the conducting surface of the base substrate, and accumulated holes generated in the device-forming layer when the transistor is driven. | 03-22-2012 |
| 20120068232 | METHOD FOR MANUFACTURING SEMICONDUCTOR DEVICE - The present invention relates to a method for manufacturing a semiconductor device, and provides to reduce a contact resistance of a landing plug by forming the landing plug in such a manner that a polysilicon layer is deposited only on the surface of a landing plug contact hole, and a metal layer is buried in the rest of the landing plug contact hole in the process of forming a storage node contact or a bit line contact. | 03-22-2012 |
| 20120062280 | OUTPUT DRIVER - An output driver includes a control signal generation unit configured to generate a control signal in response to a driving strength signal and a power supply voltage level, and a driving signal generation unit configured to buffer a pre-driving signal and generate a driving signal for driving an output data, wherein a driving strength of the driving signal is adjusted in response to the control signal. | 03-15-2012 |
| 20120061843 | SEMICONDUCTOR PACKAGE AND METHOD FOR MANUFACTURING THE SAME - A semiconductor package includes a semiconductor chip having a first surface, on which an electrode pad is arranged, and a second surface which is the other side of the semiconductor chip, an insulation member formed on the second surface of the semiconductor chip, and comprising a via hole at a position spaced apart from the semiconductor chip, and a conductive filler filling the via hole. | 03-15-2012 |
| 20120061842 | STACK PACKAGE AND METHOD FOR MANUFACTURING THE SAME - A stack package includes a substrate, a lower semiconductor chip stacked on the substrate and electrically connected to the substrate through a lower via, a plurality of upper semiconductor chips stacked on the lower semiconductor chip and electrically connected to the lower via through an upper via, wherein the upper semiconductor chips are larger in size than the lower semiconductor chip, and an edge guide electrically connecting edge vias of the upper semiconductor chips and the substrate. | 03-15-2012 |
| 20120061834 | SEMICONDUCTOR CHIP, STACKED CHIP SEMICONDUCTOR PACKAGE INCLUDING THE SAME, AND FABRICATING METHOD THEREOF - A semiconductor chip includes a silicon wafer formed with a via hole, a metal wire disposed in the via hole, and a filler that exposes a part of an upper portion of the metal wire while filing the via hole. | 03-15-2012 |
| 20120061770 | Nonvolatile Memory Device and Method of Manufacturing the Same - A method of manufacturing a nonvolatile memory device wherein first gate lines and second gate lines are formed over a semiconductor substrate. The first gate lines are spaced-from each other at a first width, the second gate lines are spaced-from each other at a second width, and the first width is wider than the second width. A first ion implantation process of forming first junction regions in the semiconductor substrate between the first gate lines and the second gate lines is performed. A second ion implantation process of forming second junction regions in the respective first junction regions between the first gate lines is then performed. | 03-15-2012 |
| 20120061760 | METHOD FOR MANUFACTURING SEMICONDUCTOR DEVICE - A method for manufacturing a semiconductor device comprises including a insulating pattern and a silicon film over a SOI substrate, thereby increasing a reduced volume of a floating body after forming a floating body fin transistor so as to secure a data storage space. The method comprises: forming a insulating pattern and a first silicon film over an upper silicon film of a SOI substrate; and forming a fin structure in the first silicon film. | 03-15-2012 |
| 20120061750 | SEMICONDUCTOR DEVICE AND METHOD FOR MANUFACTURING THE SAME - A semiconductor device and a method for manufacturing the same are disclosed. A recess gate structure is formed between an overlapping region between a gate and a source/drain so as to suppress increase in gate induced drain leakage (GIDL), and a gate insulation film is more thickly deposited in a region having weak GIDL, thereby reducing GIDL and thus improving refresh characteristics due to leakage current. | 03-15-2012 |
| 20120061739 | METHOD FOR FABRICATING CAPACITOR AND SEMICONDUCTOR DEVICE USING THE SAME - Provided are a method for fabricating a capacitor and a semiconductor device using the same. The semiconductor device includes a MOS transistor capacitor, first and second plate capacitors, and a metal interconnection. The MOS transistor capacitor is arranged between a power supply and a ground. The first and second plate capacitors are arranged between the power supply and the ground. The metal interconnection is configured to connect the first and second plate capacitors. | 03-15-2012 |
| 20120061349 | METHOD FOR CORRECTING CRITICAL DIMENSION OF PHASE SHIFT MASK AND METHOD FOR MANUFACTURING THE SAME - A method for correcting the critical dimension (CD) of a phase shift mask includes calculating an intensity slope quantifying a slope of an intensity waveform of secondary electrons emitted by scanning an electron beam spot to a hard mask pattern on a phase shift mask on a substrate, extracting a delta critical dimension (CD) value, which is equal to a CD difference between the phase shift pattern and the hard mask pattern, as a delta CD value corresponding to the intensity slope, and correcting the CD of the phase shift mask by using the extracted delta CD value. | 03-15-2012 |
| 20120060056 | SEMICONDUCTOR MEMORY DEVICE AND METHOD OF OPERATING THE SAME - A method of operating a semiconductor memory device according to an aspect of the present disclosure includes performing a program loop, including a program operation and a program verification operation, in order to store input data in selected memory cells, performing a first error bit check operation for comparing the number of error bits of data not identical with the input data, with the number of correctable error bits, if the number of error bits is equal to or smaller than the number of correctable error bits, performing a second error bit check operation for comparing the number of error bits with the reference number of bits for replacement determination, and if the number of error bits is greater than the reference number of bits for replacement determination, updating failed column address information by adding the column address of a memory cell, having the error bits, to the failed column address information. | 03-08-2012 |
| 20120058620 | EXPOSURE MASK AND METHOD FOR MANUFACTURING SEMICONDUCTOR DEVICE USING THE SAME - A method for manufacturing a semiconductor device comprises performing an exposing and developing process using an exposure mask including shading patterns and assistant patterns arranged in parallel to the shading patterns to prevent a scum phenomenon generated when a main pattern is formed in a cell region over a semiconductor substrate, thereby improving characteristics, reliability and yield of the semiconductor device. As a result, the method enables high-integration of the semiconductor device. | 03-08-2012 |
| 20120057419 | SEMICONDUCTOR MEMORY DEVICE AND METHOD OF OPERATING THE SAME - A semiconductor memory device includes an address controller for storing fail column addresses and sequentially outputting the fail column addresses while a first control signal is activated and a control logic for performing control so that data indicating a program pass is inputted to each of main page buffers associated with the respective fail column addresses outputted from the address controller while the first control signal is activated. | 03-08-2012 |
| 20120057417 | SEMICONDUCTOR MEMORY APPARATUS AND METHOD FOR CONTROLLING PROGRAMMING CURRENT PULSE - A semiconductor memory apparatus includes a write control code generation unit configured to generate a write control code which is updated at each pulsing timing of an external test pulse signal applied through a pad; and a data write unit configured to output a programming current pulse which has a magnitude corresponding to the code value of the write control code. | 03-08-2012 |
| 20120057413 | SEMICONDUCTOR MEMORY APPARATUS AND TEST METHOD THEREOF - A semiconductor memory apparatus includes a clock control unit configured to receive a first clock when an enable signal is activated and generate a second clock which has a cycle closer in length to a target clock cycle than the first clock; a DLL input clock generation unit configured to output one of the first clock and the second clock as a DLL input clock according to a DLL select signal; and an address/command input clock generation unit configured to output one of the first clock and the second clock as an AC input clock according to the enable signal. | 03-08-2012 |
| 20120057409 | NONVOLATILE MEMORY DEVICE AND METHOD OF READING THE SAME - A read method of a nonvolatile memory device according to an exemplary embodiment of this disclosure includes precharging bit lines coupled to memory cells, performing a first read operation by supplying a first reference voltage to the memory cells in order to determine the data stored in the memory cells, precharging bit lines coupled to undetermined memory cells whose data has not been determined by the first read operation, and performing a second read operation by supplying a second reference voltage to the memory cells in order to determine data stored in the undetermined memory cells. | 03-08-2012 |
| 20120057395 | SEMICONDUCTOR INTEGRATED CIRCUIT - A semiconductor integrated circuit includes a cell block including a plurality of cell mats having a plurality of word lines and a plurality of bit lines perpendicular to the plurality of word lines, a cell plate electrode formed over a whole area of the cell block, and a plate power mesh line including a first plate power mesh line electrically connected to the cell plate electrode while extending in a direction parallel to the word lines, and a second plate power mesh line extending in a direction parallel to the bit lines. The first plate power mesh line includes at least one cutting part. | 03-08-2012 |
| 20120056666 | SEMICONDUCTOR APPARATUS - Various embodiments of a semiconductor apparatus are disclosed. In one exemplary embodiment, the semiconductor apparatus may include an internal voltage generation unit configured to generate an internal voltage having a voltage level corresponding to a code value of a voltage control code, a voltage comparison unit configured to compare a voltage level of a target voltage with a voltage level of the internal voltage, and a voltage control code generation unit configured to adjust the code value of the voltage control code based on the comparison result of the voltage comparison unit. | 03-08-2012 |
| 20120056319 | EMBEDDED PACKAGE AND METHOD FOR MANUFACTURING THE SAME - An embedded package includes a first semiconductor chip having a first conductive line which has a first sunken area, a second semiconductor chip having a second conductive line which has a second sunken area, wherein the first semiconductor chip and the second semiconductor chip are arranged facing each other, and wherein the first sunken area and the second sunken area are arranged facing each other, a core layer surrounding the first semiconductor chip and the second semiconductor chip, wherein the core layer has a first circuit pattern coupled to an external terminal; and a bump formed in the first and second sunken areas, wherein the bump is coupled to the first circuit pattern. | 03-08-2012 |
| 20120045895 | SEMICONDUCTOR PACKAGE HAVING THROUGH ELECTRODES THAT REDUCE LEAKAGE CURRENT AND METHOD FOR MANUFACTURING THE SAME - A stacked semiconductor package having through electrodes that exhibit a reduced leakage current and a method of making the same are presented. The stacked semiconductor package includes a semiconductor chip, through-holes, and a current leakage prevention layer. The semiconductor chip has opposing first and second surfaces. The through-holes pass entirely through the semiconductor chip and are exposed at the first and second surfaces. A polarized part is formed on at least one of the first and second surfaces of the semiconductor chip. The through-electrodes are disposed within the through-holes. The current leakage prevention layer covers the polarized part and exposes ends of the through-electrodes. | 02-23-2012 |
| 20120045872 | Semiconductor Memory Device - Disclosed herein is a semiconductor memory device for reducing a junction resistance and increasing amount of current throughout the unit cell. A semiconductor memory device comprises plural unit cells, each coupled to contacts formed in different shape at both sides of a word line in a cell array. | 02-23-2012 |
| 20120044780 | DATA OUTPUT CIRCUIT OF SEMICONDUCTOR MEMORY APPARATUS - A data output circuit of a semiconductor memory apparatus includes: a data control driver configured to drive rising data and falling data to output control rising data and control falling data or drive level data to output the control rising data and the control falling data, in response to an output level test signal; a DLL clock control unit configured to drive a rising clock and a falling clock to output a control rising clock and a control falling clock in response to an enable signal and the output level test signal; and a clock synchronization unit configured to synchronize the control rising data and the control falling data with the control rising clock and the control falling clock to output serial rising data and serial falling data. | 02-23-2012 |
| 20120044767 | NON-VOLATILE MEMORY DEVICE AND METHOD FOR FABRICATING THE SAME - A non-volatile memory device includes a plurality of unit cells. Each unit cell includes lower and upper electrodes over a substrate, a conductive organic material layer between the lower and the upper electrodes, and a nanocrystal layer located within the conductive organic material layer, wherein the nanocrystal layer includes a plurality of nanocrystals surrounded by an amorphous barrier. A read operation is performed when an input voltage is in a first voltage range. A first write operation is performed when the input voltage is in a second voltage range higher than the first voltage range. A second write operation is performed when the input voltage is in a third voltage range higher than the second voltage range. An erase operation is performed when the input voltage is higher than the third voltage range. | 02-23-2012 |
| 20120044002 | SEMICONDUCTOR APPARATUS AND DLL CIRCUIT USING THE SAME - A semiconductor apparatus includes: an update pulse generating unit configured to generate an update pulse every first period based on a frequency of a clock, and a control unit configured to control an output signal in response to an input signal and the update pulse, so that the output signal is varied based on the input signal. | 02-23-2012 |
| 20120043605 | SEMICONDUCTOR DEVICE AND METHOD FOR FORMING THE SAME - A semiconductor device and a method for forming the same are disclosed. The semiconductor device includes a semiconductor substrate including an active region defined by a device isolation film, a trench formed in the device isolation film and the active region, a gate electrode formed at the bottom of the trench, and a high dielectric material layer formed not only over the top of the gate electrode but also over a surface of the trench. As a result, although the gate electrode does not overlap with the junction region, the semiconductor device prevents channel resistance from being increased, resulting in an increase in semiconductor device characteristics. | 02-23-2012 |
| 20120040533 | Method of Manufacturing Semiconductor Devices - A method of manufacturing semiconductor devices comprises forming a plurality of patterns by patterning a thin film formed over an underlying layer and cleaning contaminants generated when the thin film is patterned using a plasma both having oxidative and reductive properties. | 02-16-2012 |
| 20120040506 | Method for Forming Semiconductor Device - A method for manufacturing a semiconductor device includes forming a transistor having a stacked structure in a peripheral circuit region to increase net die and forming a metal silicide layer over a source/drain region of a transistor formed over an upper layer to reduce a contact resistance. The semiconductor device may include: a second active region including a silicon layer connected to a first active region of a semiconductor substrate; a gate formed over the second active region; a spacer formed on sidewalls of the gate; a source/drain region form at both sides of the spacer; and a metal silicide layer formed over the gate and the source/drain region. | 02-16-2012 |
| 20120039548 | FRAME-WISE CALIBRATION OF COLUMN-PARALLEL ADCS FOR IMAGE SENSOR ARRAY APPLICATIONS - Circuits, methods, and apparatus are described that provide calibration of column-parallel analog-to-digital converters (ADCs) in image processing contexts only once per frame (or less frequently) to reduce column-wise noise. For example, the column ADCs are calibrated during an inter-frame time interval, like a vertical blanking interval. In some embodiments, calibration data for the column ADCs for a calibration period is stored at the digital block for use in processing row data from the column ADCs. In other embodiments, calibration data for the column ADCs for the calibration period is stored at column ADCs in a local memory for local correction of the pixel data prior to being read out to the digital block for processing. In certain embodiments, techniques, such as differential ADC architectures, are used to mitigate row-wise noise in context of the frame-wise calibration. | 02-16-2012 |
| 20120039137 | SEMICONDUCTOR INTEGRATED CIRCUIT WITH MULTI TEST - A semiconductor integrated circuit includes a multi-mode control signal generating unit configured to control an activation of a up/down mat I/O switch control signal, which controls I/O switches in a up/down mat, according to a multi-test mode signal and a read/write discriminating signal, a multi-mode decoder configured to output multi-mat select signals to simultaneously activate a plurality of mats according to a multi-test mode active write signal, and a mat controller configured to enable word lines and the I/O switches according to the up/down mat I/O switch control signal and the multi-mat select signals. | 02-16-2012 |
| 20120039127 | FLASH MEMORY DEVICE AND METHOD OF OPERATING THE SAME - A method for operating a flash memory device includes applying a pass voltage to a drain pass word line, a source pass word line, and unselected word lines. The drain pass word line is provided between a drain select line and a word line. The drain pass word line has a structure in the same manner as the word lines. The source pass word line is provided between a source select line and a word line. The source pass word line has a structure in the same manner as the word lines. A program voltage is applied to a selected word line associated with a selected memory cell block. A ground voltage is applied to drain pass word lines and source pass word lines. Word lines associated with unselected memory cell blocks are set to a floating state. | 02-16-2012 |
| 20120038809 | DIFFERENTIAL COLUMN ADC ARCHITECTURES FOR CMOS IMAGE SENSOR APPLICATIONS - Circuits, methods, and apparatus that provide differential-input, single-slope, column-parallel analog-to-digital converter (ADC) architectures for use in high-resolution CMOS image sensors (CIS) are described. A column ADC is coupled with a column of a pixel array and configured to convert a pixel signal level to a corresponding digital output value according to a ramp generator output. Each pixel is configured to output a pixel reset level and a pixel signal level at different operating stages, and the ramp generator output includes a ramp reset level and a ramp signal level at the same or different at different operating stages. The pixel and ramp outputs are used to differentially drive a comparator stage of the column ADC, for example, to reduce power supply noise. | 02-16-2012 |
| 20120038799 | IMAGE SENSOR AND IMAGE DATA PROCESSING METHOD USING THE SAME - An image sensor includes a storage unit configured to store at least a portion of image data, a homogeneous pixel determination unit configured to determine whether dead pixels exist in homogeneous pixels having the same color characteristic as a center pixel in a window of the image data, and an offset correction processing unit configured to calculate a difference value between the center pixel and homogeneous pixels determined as normal pixels by the homogeneous pixel determination unit, and correct a center pixel value by using the calculated difference value. | 02-16-2012 |
| 20120037791 | IMAGE SENSOR - An image sensor includes a band gap reference unit configured to provide a reference voltage having a predetermined voltage level, a storage unit configured to store the reference voltage, a switch configured to selectively connect the storage unit to the band gap reference unit, and a ramp signal generation unit configured to receive an input voltage corresponding to the reference voltage stored in the storage unit and generate a ramp signal. | 02-16-2012 |
| 20120035877 | SEMICONDUCTOR DEVICE HAVING TEST FUNCTION AND TEST METHOD USING THE SAME - A semiconductor device having a test function includes a program counter for storing a breaking address in a storage unit in response to control signals, increasing a count address in response to the control signals, and storing the increased count address in the storage unit; a controller for stopping the increase of the count address when the count address is identical to the breaking address and outputting a pump holding signal; an oscillator for generating a clock signal in response to an enable signal and maintaining a current cycle of the clock signal in response to the pump holding signal; and a pump unit for generating an output voltage in response to the clock signal. | 02-09-2012 |
| 20120034782 | Method of Forming Fine Patterns - A method of forming fine patterns according to an aspect of the present disclosure comprises stacking a hard mask layer and a first auxiliary layer over an underlying layer, removing regions of the first auxiliary layer, thereby forming first auxiliary patterns to expose regions of the hard mask layer, filling between the first auxiliary patterns with a second auxiliary layer, wherein a material of the second auxiliary layer is different from that of the first auxiliary layer, lowering a height of the second auxiliary layer by removing the second auxiliary layer to expose sidewalls of the first auxiliary patterns, forming spacers on the exposed sidewalls of the first auxiliary patterns to expose regions of the second auxiliary layer, wherein a material of the spacers is different from that of the second auxiliary layer, removing the exposed regions of the second auxiliary layer, removing the spacers and the first auxiliary patterns to expose regions of the hard mask layer and removing the exposed regions of the hard mask layer, thereby forming hard mask patterns. | 02-09-2012 |
| 20120033523 | INPUT CIRCUIT OF SEMICONDUCTOR MEMORY APPARATUS AND CONTROLLING METHOD THEREOF - Disclosed is an input circuit of a semiconductor memory apparatus. The input circuit includes a first buffer and a second buffer. The first buffer has an input terminal connected with a first input pin for receiving a control signal used in a multi-control mode for controlling an entire memory area by dividing the entire memory area, and an output terminal having a first level according to a control mode signal. The second buffer has an input terminal connected with a second input pin for receiving one of plural signals used in a single control mode for controlling the entire memory area without dividing the entire memory area, and an output terminal having a second level according to the control mode signal. | 02-09-2012 |
| 20120033511 | CONTROL CIRCUIT OF READ OPERATION FOR SEMICONDUCTOR MEMORY APPARATUS - A control circuit for a read operation of a SERDES (SERializer and DESeriallizer) type semiconductor memory apparatus is disclosed that includes a first line driver configured to output a portion of a output signals from sense amplifier according to a first delay signal; a second line driver configured to output a rest of the output signals from the sense amplifier according to a second delay signal; and a first delay unit configured to output a second delay signal synchronized with a clock to the second line driver. | 02-09-2012 |
| 20120033478 | NON-VOLATILE MEMORY DEVICE AND SENSING METHOD FOR FORMING THE SAME - A non-volatile memory device and a method for forming the same are disclosed, which relate to a ferroelectric memory device having non-volatile characteristics. The non-volatile memory device includes a control gate configured to receive a read voltage, an insulation film formed over the control gate, a metal layer formed over the insulation film, configured to include a channel region, and a drain region and source region at both ends of the channel region, a ferroelectric layer formed over the channel region of the metal layer, and a program and read gate formed over the ferroelectric layer. A write operation of data corresponding to a resistance state of the channel region is performed by changing polarity of the ferroelectric layer in response to a voltage applied to the program and read gate, the drain and source regions, and the control gate. A read operation of data is performed by sensing a current value changing with a polarity state of the ferroelectric layer on the condition that the read voltage is input to the control gate and a sensing bias voltage is input to one of the drain region and the source region. | 02-09-2012 |
| 20120032724 | CIRCUIT AND METHOD FOR GENERATING PUMPING VOLTAGE IN SEMICONDUCTOR MEMORY APPARATUS AND SEMICONDUCTOR MEMORY APPARATUS USING THE SAME - A circuit for generating a pumping voltage in a semiconductor memory apparatus includes a control signal generation block configured to generate a first control signal obtained by level-shifting a voltage level of a test signal to a first driving voltage level, a voltage application section configured to supply an external voltage to a first node in response to a first transmission signal, a first charge pump configured to raise a voltage level of the first node by a first predetermined level in response to an oscillator signal, and a first pumping voltage output section configured to select at least one of a first connection unit and a second connection unit in response to the first control signal, and to interconnect the first node with a second node using the selected connection unit when a second transmission signal is enabled, wherein a first pumping voltage is output through the second node. | 02-09-2012 |
| 20120032342 | SEMICONDUCTOR PACKAGE FOR SELECTING SEMICONDUCTOR CHIP FROM A CHIP STACK - A semiconductor package includes: first, second, third and fourth semiconductor chips stacked while having the arrangement of chip selection vias; and a connection unit provided between a second semiconductor chip and a third semiconductor chip, and configured to mutually connect some of the chip selection vias of the second and third semiconductor chips and disconnect the others of the chip selection vias of the second and third semiconductor chips, wherein the first and second semiconductor chips and the third and fourth semiconductor chips are stacked in a flip chip type. | 02-09-2012 |
| 20120030153 | SEMICONDUCTOR SYSTEM AND DATA TRAINING METHOD THEREOF - A semiconductor system includes a semiconductor memory configured to determine whether an error has occurred in a data pattern and generate an error signal, and a memory controller configured to provide the data pattern to the semiconductor memory and perform data training with respect to the semiconductor memory using the error signal. | 02-02-2012 |
| 20120026809 | MULTI-BIT TEST CIRCUIT OF SEMICONDUCTOR MEMORY APPARATUS - A multi-bit test circuit for a semiconductor memory is configured to cause an active command to activate active signals. At least two active signals are respectively inputted to a plurality of banks at different timings in a multi-bit test mode. | 02-02-2012 |
| 20120026807 | SEMICONDUCTOR MEMORY CHIP AND INTEGRATED CIRCUIT - A semiconductor memory chip includes: a driving voltage reception unit configured to receive a power supply voltage and a ground voltage; a first data driving unit configured to be supplied with the power supply voltage and the ground voltage, and drive first data to output the driven first data through a first data line; a second data driving unit configured to be supplied with the power supply voltage and the ground voltage, and drive second data to output the driven second data through a second data line; and a MOS transistor coupled between the first data line and the second data line. | 02-02-2012 |
| 20120026806 | DATA INPUT CIRCUIT - A data input circuit includes a valid strobe signal generation circuit and a data strobe signal counter. The valid strobe signal generation circuit is configured to remove a pulse of an internal strobe signal generated and generate a valid strobe signal. The pulse may have been generated during a preamble period. The data strobe signal counter is configured to count the valid strobe signal according to burst length information and generate a write latch signal for aligning data at a time of a write operation. | 02-02-2012 |
| 20120026801 | SEMICONDUCTOR MEMORY APPARATUS AND METHOD FOR DISCHARGING WORDLINE THEREOF - Various embodiments of a semiconductor apparatus having a discharge technology are disclosed. In one exemplary embodiment, the semiconductor apparatus may include a plurality of lines in which a selected line is driven by a first control voltage and an unselected line is driven by a second control voltage with a level lower than the first control voltage. The apparatus may also include a discharge control unit configured to form a discharge current path between a discharge node of the selected line and a common discharge node of the unselected line and induce a predetermined voltage difference between the discharge node and the common discharge node; and a common discharge unit configured to discharge current flowing through the discharge current path. | 02-02-2012 |
| 20120026800 | SEMICONDUCTOR APPARATUS AND METHOD FOR TRANSFERRING CONTROL VOLTAGE - A semiconductor apparatus includes a control voltage transfer unit configured to transfer a control voltage transmitted through first transmission lines, to second transmission lines in response to a select signal transmitted through a select signal transmission line; a select signal driving unit configured to drive the select signal to the select signal transmission line; and a voltage boosting control unit configured to float the select signal transmission line when a voltage level of the select signal transmission line increase to or above a target level. | 02-02-2012 |
| 20120026773 | SEMICONDUCTOR MEMORY APPARATUS HAVING SENSE AMPLIFIER - Disclosed is a semiconductor memory apparatus comprising an upper mat and a lower mat with a sense amplifier array region in between, where the sense amplifier array region includes a plurality of sense amplifiers. There is also a plurality of bit lines configured to extend toward the sense amplifier array region from the upper mat, and a plurality of complementary bit lines configured to extend toward the sense amplifier array region from the lower mat. Bit lines of the upper mat and complementary bit lines of the lower mat are configured to be alternately disposed at a predetermined interval in the sense amplifier array region, and the sense amplifier is configured to be formed between a bit line and a corresponding complementary bit line. | 02-02-2012 |
| 20120025314 | SEMICONDUCTOR DEVICE AND METHOD FOR MANUFACTURING THE SAME - A semiconductor device and a method for manufacturing the same are disclosed. The method for forming the semiconductor device includes forming one or more buried gates in a semiconductor substrate, forming a landing plug between the buried gates, forming a bit line region exposing the landing plug over the semiconductor substrate, forming a glue layer in the bit line region, forming a bit line material in the bit line region, and removing the glue layer formed at inner sidewalls of the bit line region, and burying an insulation material in a part where the glue layer is removed. A titanium nitride (TiN) film formed at sidewalls of the damascene bit line is removed, so that resistance of the bit line is maintained and parasitic capacitance of the bit line is reduced, resulting in the improvement of device characteristics. | 02-02-2012 |
| 20120025296 | SEMICONDUCTOR DEVICE AND METHOD FOR MANUFACTURING THE SAME - A semiconductor device and a method for manufacturing the same are disclosed. The method for manufacturing the semiconductor device comprises: forming a plurality of first pillar patterns each of which includes a sidewall contact by selectively etching a semiconductor substrate; forming a buried bit line at a lower portion of a region between two neighboring first pillar patterns; forming a plurality of second pillar patterns by selectively etching upper portions of the first pillar patterns; and forming a gate coupling second pillar patterns arranged in a direction crossing the bit line, the gate enclosing the second pillar patterns. | 02-02-2012 |
| 20120021595 | SEMICONDUCTOR MEMORY DEVICE AND METHOD OF MANUFACTURING THE SAME - A method of manufacturing a semiconductor device includes providing a substrate having junction regions and contact plugs formed thereon. A second insulating layer is formed over a first insulating layer and includes first and second pad holes extending in different directions and exposing the contact plugs. First and second conductive pads are formed in the first and second pad holes, respectively. A third insulating layer is formed and includes dual damascene patterns and pad contact holes. The dual damascene pattern exposes the first conductive pad, and each pad contact hole exposes a second conductive pad. First pad contact plugs and a first bit line are formed in the dual damascene pattern and a second pad contract plug is formed in each pad contact hole. A fourth insulating layer including trenches is formed. Each trench exposes a second pad contact plug. A second bit line is formed in each trench. | 01-26-2012 |
| 20120021576 | VERTICAL TRANSISTOR AND METHOD FOR FORMING THE SAME - A vertical transistor and a method for forming the same. The vertical transistor includes a semiconductor substrate having pillar type active patterns formed on a surface thereof; first junction regions formed in the surface of the semiconductor substrate on both sides of the active patterns; screening layers formed on sidewalls of the first junction regions; second junction regions formed on upper surfaces of the active patterns; and gates formed on sidewalls of the active patterns including the second junction regions to overlap with at least portions of the first junction regions. | 01-26-2012 |
| 20120021575 | DIFFUSING IMPURITY IONS INTO PILLARS TO FORM VERTICAL TRANSISTORS - A method for manufacturing a semiconductor device comprises: forming a pillar pattern including a sidewall contact over a semiconductor substrate; forming a silicon layer in a lower portion disposed between the pillar patterns; implanting ions into the silicon layer; diffusing the implanted impurity ions into the inside of the pillar pattern to form an ion-implanting region; removing the silicon layer; and burying a conductive material in the lower portion disposed between the pillar patterns. The method can prevent a floating body effect by adding a process of a vertical channel transistor. | 01-26-2012 |
| 20120020175 | METHOD AND SYSTEM FOR PROCESSING A REPAIR ADDRESS IN A SEMICONDUCTOR MEMORY APPARATUS - A semiconductor memory apparatus includes a memory device having a first plane and a second plane and a repair address latch unit configured to latch a plurality of repair addresses outputted from the memory device. The apparatus also includes an address comparison unit configured to compare the plurality of repair addresses stored in the repair address latch unit and a first plane address and a second plane address which are sequentially inputted. A repair processing unit is configured to selectively activate corresponding memory cell groups of the first plane and the second plane in conformity with the comparison result of the address comparison unit under the control of a first plane signal, a second plane signal and a start pulse signal. | 01-26-2012 |
| 20120020172 | DATA STROBE SIGNAL GENERATING DEVICE AND A SEMICONDUCTOR MEMORY APPARATUS USING THE SAME - A data strobe signal generating device includes a preamble controller configured to generate a preamble signal enabled in synchronization with a first dock signal and disabled in synchronization with a second clock signal after an output enable signal is enabled, and a data strobe signal output unit configured to generate a data strobe signal in response to the preamble signal. | 01-26-2012 |
| 20120019980 | PILLAR TYPE CAPACITOR OF SEMICONDUCTOR DEVICE AND METHOD FOR FORMING THE SAME - An embodiment of the invention includes a pillar type capacitor where a pillar is formed over an upper portion of a storage node contact. A bottom electrode is formed over sidewalls of the pillar, and a dielectric film is formed over pillar and the bottom electrode. A top electrode is then formed over the upper portion of the dielectric film. | 01-26-2012 |
| 20120018888 | SEMICONDUCTOR DEVICES AND METHOD OF FORMING THE SAME - A method of forming semiconductor devices includes stacking an insulating layer and a polysilicon layer over a semiconductor substrate, forming a region where nitrogen (N) is scattered in a place adjacent to a surface of the polysilicon layer within the polysilicon layer using a plasma method, and depositing a doped polysilicon layer on the polysilicon layer including the region where nitrogen (N) is scattered. | 01-26-2012 |
| 20120018879 | STACK PACKAGE AND METHOD FOR MANUFACTURING THE SAME - A stack package includes a cover film, a first package having a first semiconductor chip which is attached to the cover film, a first adhesive member which is formed to seal the first semiconductor chip and a surface of the cover film, and a first circuit pattern which is disposed over the first adhesive member and electrically connected with the first semiconductor chip; a second package disposed over the first package, having a second semiconductor chip which is electrically connected with the first circuit pattern, a second adhesive member which is formed to seal the second semiconductor chip, and a second circuit pattern which is formed over the second adhesive member, and a via formed to pass through the second circuit pattern and the second adhesive member and to be electrically connected with the first circuit pattern and the second circuit pattern. | 01-26-2012 |
| 20120018826 | SEMICONDUCTOR MEMORY AND MANUFACTURING METHOD THEREOF - A method for manufacturing a semiconductor memory device includes sequentially depositing a bottom electrode layer, a magnetic tunnel junction (MTJ) layer, a first top electrode layer, a second top electrode layer and a mask layer, etching the mask layer and forming a mask pattern, etching the second top electrode layer and the first top electrode layer by using the mask pattern as an etch barrier, etching the MTJ layer by using the mask layer and the second top electrode layer as an etch barrier, and etching the bottom electrode layer by using the first top electrode layer as an etch barrier. | 01-26-2012 |
