HRL Laboratories, LLC Patent applications |
Patent application number | Title | Published |
20160064555 | III-NITRIDE TRANSISTOR WITH ENHANCED DOPING IN BASE LAYER - A vertical trench MOSFET comprising: a N-doped substrate of a III-N material; and an epitaxial layer of the III-N material grown on a top surface of the substrate, a N-doped drift region being formed in said epitaxial layer; a P-doped base layer of said III-N material, formed on top of at least a portion of the drift region; a N-doped source region of said III-N material; formed on at least a portion of the base layer; and a gate trench having at least one vertical wall extending along at least a portion of the source region and at least a portion of the base layer; wherein at least a portion of the P-doped base layer along the gate trench is a layer of said P-doped III-N material that additionally comprises a percentage of aluminum. | 03-03-2016 |
20150318373 | CURRENT APERTURE DIODE AND METHOD OF FABRICATING THE SAME - A diode and a method of making same has a cathode an anode and one or more semiconductor layers disposed between the cathode and the anode. A dielectric layer is disposed between at least one of the one or more semiconductor layers and at least one of the cathode or anode, the dielectric layer having one or more openings or trenches formed therein through which the at least one of said cathode or anode projects into the at least one of the one or more semiconductor layers, wherein a ratio of a total surface area of the one or more openings or trenches formed in the dielectric layer at the at least one of the one or more semiconductor layers to a total surface area of the dielectric layer at the at least one of the one or more semiconductor layers is no greater than 0.25. | 11-05-2015 |
20150311330 | FET TRANSISTOR ON A III-V MATERIAL STRUCTURE WITH SUBSTRATE TRANSFER - A method of manufacturing a III-V semiconductor circuit; the method comprising: forming a first layer of a III-V material on a growth substrate; forming a second layer of a III-V material on the first layer of III-V material; forming a FET transistor having a source electrode and a drain electrode in contact with a top surface of the second layer of a III-V material; forming a top dielectric layer above the FET transistor; forming a metal layer above the top dielectric layer, wherein said metal layer is connected to said source electrode; attaching a handle substrate to a top surface of the metal layer; removing the growth substrate from the bottom of the first layer of a III-V material; and forming a bottom dielectric layer on the bottom of the first layer of a III-V material. | 10-29-2015 |
20150302296 | PLASTIC ACTION-SELECTION NETWORKS FOR NEUROMORPHIC HARDWARE - A neural model for reinforcement-learning and for action-selection includes a plurality of channels, a population of input neurons in each of the channels, a population of output neurons in each of the channels, each population of input neurons in each of the channels coupled to each population of output neurons in each of the channels, and a population of reward neurons in each of the channels. Each channel of a population of reward neurons receives input from an environmental input, and is coupled only to output neurons in a channel that the reward neuron is part of. If the environmental input for a channel is positive, the corresponding channel of a population of output neurons are rewarded and have their responses reinforced, otherwise the corresponding channel of a population of output neurons are punished and have their responses attenuated. | 10-22-2015 |
20150287211 | METHOD FOR CLASSIFICATION AND SEGMENTATION AND FORMING 3D MODELS FROM IMAGES - A method of classification and segmentation of an image using modules on a computer system includes receiving a plurality of models having features suitable for classifying each pixel of the image into a respective one of a plurality of categories, using a classifier to provide a score for each pixel in the image for each category and using a segmenter to segment the image into image segments, wherein each image segment is a contiguous set of pixels having at least one common feature. For each image segment a set of average probabilities for each category is determined, and for each image segment, a most likely category to which the image segment belongs is determined by the maximum average probability resulting in a labeled segment image, which is used to identify any empty areas as incorrect holes. Then any empty areas that are identified as incorrect holes are filled. | 10-08-2015 |
20150263432 | CAVITY-BACKED ARTIFICIAL MAGNETIC CONDUCTOR - An active artificial magnetic conductor includes an array of unit cells, each unit cell including a top face, at least one wall coupled to the top face, a base coupled to the at least one wall, and a crossed slot in the top face. The top face, the at least one wall, and the base form a cavity and are conductive. | 09-17-2015 |
20150244080 | POLARIZATION INDEPENDENT ACTIVE ARTIFICIAL MAGENTIC CONDUCTOR - An active artificial magnetic conductor includes a ground plane and an array of unit cells coupled to the ground plane. Each unit cell includes a low impedance shunt coupled to the ground plane and an impedance element coupled to the low impedance shunt. A plurality of non Foster circuits are coupled in two different directions between impedance elements of adjacent neighboring unit cells in the array of unit cells. | 08-27-2015 |
20150244079 | CAVITY-BACKED ARTIFICIAL MAGNETIC CONDUCTOR - An active artificial magnetic conductor includes an array of unit cells, each unit cell including a top face, at least one wall coupled to the top face, a base coupled to the at least one wall, and a crossed slot in the top face. The top face, the at least one wall, and the base form a cavity and are conductive. | 08-27-2015 |
20150236408 | REDUCING ANTENNA ARRAY FEED MODULES THROUGH CONTROLLED MUTUAL COUPLING OF A PIXELATED EM SURFACE - A reconfigurable radio frequency aperture including a substrate, a plurality of reconfigurable patches on the substrate, and a plurality of reconfigurable coupling elements on the substrate, wherein at least one reconfigurable coupling element is coupled between a reconfigurable patch and another reconfigurable patch, and wherein the reconfigurable coupling elements affect the mutual coupling between reconfigurable patches. | 08-20-2015 |
20150145748 | CIRCULARLY POLARIZED SCALAR IMPEDANCE ARTIFICIAL IMPEDANCE SURFACE ANTENNA - A circularly polarized artificial impedance surface antenna (AISA) includes an impedance modulated substrate having a modulated scalar impedance to a surface wave traversing a top surface of the substrate, wherein the impedance modulation has a plurality of intertwined lines of constant impedance, and wherein each line of constant impedance follows a spiral elliptical path. | 05-28-2015 |
20150116022 | REDUCTION OF THE INDUCTANCE OF POWER LOOP AND GATE LOOP IN A HALF-BRIDGE CONVERTER WITH VERTICAL CURRENT LOOPS - A half bridge circuit including an isolation substrate, a metal layer on one surface of the isolation substrate, a power loop substrate on the metal layer, an upper switch on the power loop substrate, a lower switch on the power loop substrate and coupled to the upper switch, a capacitor on the power loop substrate and coupled to the upper switch, a first via through the power loop substrate and coupled between the lower switch and the metal layer, and a second via through the power loop substrate and coupled between the capacitor and the metal layer, wherein the power loop substrate has a height and separates the metal layer from the upper switch, lower switch and capacitor by the height. | 04-30-2015 |
20150111979 | METHOD FOR CURING STRUCTURES USING A DUAL PHOTOINITIATOR SYSTEM AND A STRUCTURE MADE USING THE SAME - A monomeric formulation for fabrication of microlattice structures, the monomeric formulation including a plurality of monomers, a first photoinitiator configured to substantially activate above a wavelength of light, and a second photoinitiator configured not to substantially activate above the wavelength of light and to substantially activate below the wavelength of light. | 04-23-2015 |
20150084002 | METHODS FOR INTEGRATING AND FORMING OPTICALLY TRANSPARENT DEVICES ON SURFACES - An apparatus, system, and/or method are described to enable optically transparent reconfigurable integrated electrical components, such as antennas and RF circuits to be integrated into an optically transparent host platform, such as glass. In one embodiment, an Ag NW film may be configured as a transparent conductor for antennas and/or as interconnects for passive circuit components, such as capacitors or resistors. Ag NW may also be used as transmission lines and/or interconnect overlays for devices. A graphene film may also be configured as active channel material for making active RF devices, such as amplifiers and switches. | 03-26-2015 |
20150056764 | Methods relating to a Group III HFET with a Graded Barrier Layer - A device and a method of making said wherein the device wherein the device has a group III-nitride buffer deposited on a substrate; and a group III-nitride heterostructure disposed on a surface of the group III-nitride buffer, wherein the group III-nitride heterostructure has a group III-nitride channel and a group III-nitride barrier layer disposed on a surface of the group III-nitride channel, the group III-nitride barrier layer including Al as one of its constituent group III elements, the Al having a mole fraction which varies at least throughout a portion of said group III-nitride barrier layer. | 02-26-2015 |
20150026110 | SPIKING MODEL TO LEARN ARBITRARY MULTIPLE TRANSFORMATIONS FOR A SELF-REALIZING NETWORK - A neural network, wherein a portion of the neural network comprises: a first array having a first number of neurons, wherein the dendrite of each neuron of the first array is provided for receiving an input signal indicating that a measured parameter gets closer to a predetermined value assigned to said neuron; and a second array having a second number of neurons, wherein the second number is smaller than the first number, the dendrite of each neuron of the second array forming an excitatory STDP synapse with the axon of a plurality of neurons of the first array; the dendrite of each neuron of the second array forming an excitatory STDP synapse with the axon of neighboring neurons of the second array. | 01-22-2015 |
20140300431 | Broadband non-Foster Decoupling Networks for Superdirective Antenna Arrays - A four port antenna decoupling network which has only two negative capacitors and four or more positive capacitors and a method of improving low frequency receiving performance of two element and four element antenna arrays using one or more wideband decoupling circuits wherein each of said wideband decoupling circuits contain a maximum of two non-Foster components, the two non-Foster components preferably simulating negative capacitors. | 10-09-2014 |
20140272301 | STRUCTURAL COATINGS WITH DEWETTING AND ANTI-ICING PROPERTIES, AND PROCESSES FOR FABRICATING THESE COATINGS - Durable, impact-resistant structural coatings with dewetting and anti-icing properties are disclosed. The coatings possess a self-similar structure with two feature sizes that are tuned to affect the wetting of water and freezing of water on the surface. Dewetting and anti-icing performance is simultaneously achieved in a structural coating comprising multiple layers, with each layer including (a) a continuous matrix; (b) porous voids, dispersed within the matrix, to inhibit wetting of water; and (c) nanoparticles, on pore surfaces, that inhibit heterogeneous nucleation of water. These structural coatings utilize low-cost and lightweight materials that can be rapidly sprayed over large areas. If the surface is damaged during use, fresh material will expose a coating surface that is identical to that which was removed, for extended lifetime. | 09-18-2014 |
20140272277 | CONSTRAINED MICROLAYER CELLULAR MATERIAL WITH HIGH STIFFNESS AND DAMPING - Composite materials with high damping and high stiffness at relatively low density. These materials include three-dimensional structures of interconnected ligaments, which have multiple concentric layers alternating between stiff constraining layers and soft damping layers, so that bulk deformation of the structure results in high local shear strain and correspondingly high bulk damping. | 09-18-2014 |
20140272275 | MICRO-TRUSS MATERIALS HAVING IN-PLANE MATERIAL PROPERTY VARIATIONS - A micro-truss sheet having material properties varying across the sheet. The sheet may include a plurality of truss members intersecting at nodes. The diameter of the truss members at one point in the sheet may differ from the diameter of the truss members at another point in the sheet. In one embodiment the spacing between adjacent truss members may be different in one part of the sheet from the spacing between adjacent truss members in another part of the sheet. | 09-18-2014 |
20140241211 | MIMO-OFDM SYSTEM FOR ROBUST AND EFFICIENT NEUROMORPHIC INTER-DEVICE COMMUNICATION - A Multiple Input Multiple Output (MIMO) Orthogonal Frequency Division Multiplexing (OFDM) system for inter-device communication is described. Information data from each neuromorphic chip is coded and modulated, on the basis of destination, into different channels. The parallel signals in different channels are sent serially using TDM to a central router. After signal grouping by a central switching controller, each group of signals may be delivered to corresponding transmitter in the central router for transmission to a corresponding receiver in the neuromorphic chip using TDM. | 08-28-2014 |
20140220237 | METHODS FOR FABRICATING INORGANIC PROTON-CONDUCTING COATINGS FOR FUEL-CELL MEMBRANES - The present invention provides methods for fabricating a fuel cell membrane structure that can dramatically reduce fuel crossover, thereby improving fuel cell efficiency and power output. Preferred composite membrane structures include an inorganic layer situated between the anode layer and the proton-exchange membrane. The inorganic layer can conduct protons in unhydrated form, rather than as hydronium ions, which reduces fuel crossover. Some methods of this invention include certain coating steps to effectively deposit an inorganic layer on an organic proton-exchange membrane. | 08-07-2014 |
20140217992 | SEPARATORS FOR LITHIUM-SULFUR BATTERIES - This invention, in some variations, provides a separator for a lithium-sulfur battery, comprising a porous substrate that is permeable to lithium ions; and a lithium-ion-conducting metal oxide layer on the substrate, wherein the metal oxide layer includes deposits of sulfur that are intentionally introduced prior to battery operation. The deposits of sulfur may be derived from treatment of the metal oxide layer with one or more sulfur-containing precursors (e.g., lithium polysulfides) prior to operation of the lithium-sulfur battery. Other variations provide a method of charging a lithium-sulfur battery that includes the disclosed separator, the charging being accomplished by continuously applying a substantially constant voltage to the lithium-sulfur battery until the battery charging current is at or below a selected current. | 08-07-2014 |
20140211298 | TUNABLE OPTICAL METAMATERIAL - A tunable metamaterial has a two dimensional array of resonant annular ring elements; and a plurality of voltage controllable electrical tuning elements disposed in or adjacent openings in each of said ring elements, each of said voltage controllable electrical tuning element ohmically contacting portions of only one of said ring elements. The voltage controllable electrical tuning elements may comprise highly doped semiconductor tunnel diodes, or the charge accumulation layer at the semiconductor/insulator interface of a metal-insulator-semiconductor structure, or nanoelectromechanical (NEMs) capacitors. The tunable metamaterial may be used, for example, in an optical beam steering device using the aforementioned tunable optical metamaterial in which a free-space optical beam is coupled into a receiving portion of a plane of the optical metamaterial and is steered out of a transmitter portion of the plane of the optical metamaterial in controllable azimuthal and elevational directions. The tunable metamaterial additionally has other applications. | 07-31-2014 |
20140208581 | METHOD OF INSTALLING ARTIFICIAL IMPEDANCE SURFACE ANTENNAS FOR SATELLITE MEDIA RECEPTION - A method for fabricating and installing an artificial impedance surface antenna (AISA) includes locating a substantially flat surface having a line of sight to a satellite or satellites of interest, determining an angle θ | 07-31-2014 |
20140197848 | REMOVABLE SURFACE -WAVE NETWORKS FOR IN-SITU MATERIAL HEALTH MONITORING - A system for measuring properties of a surface under test with surface waves includes a surface wave network including a dielectric substrate, a reactive grid of a plurality of metallic patches on a first surface of the dielectric substrate, a plurality of electronic nodes on the first surface of the dielectric substrate, and a ground plane on a second surface of the dielectric substrate permeable to RF fields of the surface waves, and a controller configured for causing a respective one of the electronic nodes to transmit at least one surface wave and configured for collecting data for signals received by at least one other of the plurality of electronic nodes. | 07-17-2014 |
20140191181 | METHOD TO MAKE RF-PCM SWITCHES AND CIRCUITS WITH PHASE-CHANGE MATERIALS - A radio frequency switch includes a first transmission line, a second transmission line, a first electrode electrically coupled to the first transmission line, a second electrode electrically coupled to the second transmission line, and a phase change material, the first transmission line coupled to a first area of the phase change material and the second transmission line coupled to a second area of the phase change material. When a direct current is sent from the first electrode to the second electrode through the phase change material, the phase change material changes state from a high resistance state to a low resistance state allowing transmission from the first transmission line to the second transmission line. The radio frequency switch is integrated on a substrate. | 07-10-2014 |
20140158987 | METHODS FOR INTEGRATING AND FORMING OPTICALLY TRANSPARENT DEVICES ON SURFACES - An apparatus, system, and/or method are described to enable optically transparent reconfigurable integrated electrical components, such as antennas and RF circuits to be integrated into an optically transparent host platform, such as glass. In one embodiment, an Ag NW film may be configured as a transparent conductor for antennas and/or as interconnects for passive circuit components, such as capacitors or resistors. Ag NW may also be used as transmission lines and/or interconnect overlays for devices. A graphene film may also be configured as active channel material for making active RF devices, such as amplifiers and switches. | 06-12-2014 |
20140156578 | FIRING RATE INDEPENDENT SPIKE MESSAGE PASSING IN LARGE SCALE NEURAL NETWORK MODELING - A neural network portion comprising N pre-synaptic neurons capable each of firing an action potential, wherein the number N can be encoded in a word of n bits;
| 06-05-2014 |
20140051221 | CONTROLLING LATERAL TWO-DIMENSIONAL ELECTRON HOLE GAS HEMT IN TYPE III NITRIDE DEVICES USING ION IMPLANTATION THROUGH GRAY SCALE MASK - A high electron mobility field effect transistor (HEMT) includes a two dimensional electron gas (2DEG) in the drift region between the gate and the drain that has a non-uniform lateral 2DEG distribution that increases in a direction in the drift region from the gate to the drain. | 02-20-2014 |
20130341632 | CURRENT APERTURE DIODE AND METHOD OF FABRICATING SAME - A diode and a method of making same has a cathode an anode and one or more semiconductor layers disposed between the cathode and the anode. A dielectric layer is disposed between at least one of the one or more semiconductor layers and at least one of the cathode or anode, the dielectric layer having one or more openings or trenches formed therein through which the at least one of said cathode or anode projects into the at least one of the one or more semiconductor layers, wherein a ratio of a total surface area of the one or more openings or trenches formed in the dielectric layer at the at least one of the one or more semiconductor layers to a total surface area of the dielectric layer at the at least one of the one or more semiconductor layers is no greater than 0.25. | 12-26-2013 |
20130328061 | NORMALLY-OFF GALLIUM NITRIDE TRANSISTOR WITH INSULATING GATE AND METHOD OF MAKING THE SAME - A normally-off transistor includes a channel layer, an electron supply layer overlaying the channel layer, a source electrode and a drain electrode on the electron supply layer, an area in the electrode supply layer between the source electrode and the drain electrode treated with a fluoride based plasma followed by a chlorine based plasma treatment, a gate insulator overlaying the area, and a gate electrode overlaying the gate insulator. | 12-12-2013 |
20130313612 | HEMT GaN DEVICE WITH A NON-UNIFORM LATERAL TWO DIMENSIONAL ELECTRON GAS PROFILE AND METHOD OF MANUFACTURING THE SAME - A high electron mobility field effect transistor (HEMT) having a substrate, a channel layer on the substrate and a barrier layer on the channel layer includes a stress inducing layer on the barrier layer, the stress inducing layer varying the piezo-electric effect in the barrier layer in a drift region between a gate and a drain. A two dimensional electron gas (2DEG) has a non-uniform lateral distribution in the drift region between the gate and the drain. | 11-28-2013 |
20130313611 | A NON-UNIFORM LATERAL PROFILE OF TWO-DIMENSIONAL ELECTRON GAS CHARGE DENSITY IN TYPE III NITRIDE HEMT DEVICES USING ION IMPLANTATION THROUGH GRAY SCALE MASK - A high electron mobility field effect transistor (HEMT) includes a two dimensional electron gas (2DEG) in the drift region between the gate and the drain that has a non-uniform lateral 2DEG distribution that increases in a direction in the drift region from the gate to the drain. | 11-28-2013 |
20130313560 | NON-UNIFORM TWO DIMENSIONAL ELECTRON GAS PROFILE IN III-NITRIDE HEMT DEVICES - A HEMT device has a substrate; a buffer layer disposed above the substrate; a carrier supplying layer disposed above the buffer layer; a gate element penetrating the carrier supplying layer; and a drain element disposed on the carrier supplying layer. The carrier supplying layer has a non-uniform thickness between the gate element and the drain element, the carrier supplying layer having a relatively greater thickness adjacent the drain element and a relatively thinner thickness adjacent the gate element. A non-uniform two-dimensional electron gas conduction channel is formed in the carrier supplying layer, the two-dimensional electron gas conduction channel having a non-uniform profile between the gate and drain elements. | 11-28-2013 |
20130285871 | Conformal Surface Wave Feed - A transmission line feed for a surface wave medium having a dielectric substrate with an array of electrically conductive patches formed thereon. The transmission line feed includes a microstrip substrate, the microstrip substrate having a first permittivity which is lower than a second permittivity of the dielectric substrate of the surface wave medium, the microstrip substrate abutting against the dielectric substrate of the surface wave medium; a tapered microstrip disposed on the microstrip substrate, the tapered microstrip tapering from a relatively narrow end to a relatively wide end, the relative wide end terminating where the microstrip substrate abuts against the surface wave substrate; and an adapter for coupling a transmission line to the relatively narrow end of the tapered microstrip. | 10-31-2013 |
20130270572 | GROUP III-N HFET WITH A GRADED BARRIER LAYER - A device and a method of making said wherein the device wherein the device has a group III-nitride buffer deposited on a substrate; and a group III-nitride heterostructure disposed on a surface of the group III-nitride buffer, wherein the group III-nitride heterostructure has a group III-nitride channel and a group III-nitride barrier layer disposed on a surface of the group III-nitride channel, the group III-nitride barrier layer including Al as one of its constituent group III elements, the Al having a mole fraction which varies at least throughout a portion of said group III-nitride barrier layer. | 10-17-2013 |
20130249737 | DIELECTRIC ARTIFICIAL IMPEDANCE SURFACE ANTENNA - A dielectric artificial impedance surface antenna (DAISA) including a dielectric with a thickness, the dielectric thickness varying to provide a modulated impedance to a signal traversing the dielectric, the dielectric having a first surface, and a second surface opposite the first surface. | 09-26-2013 |
20130169471 | CODED APERTURE BEAM ANALYSIS METHOD AND APPARATUS - A method and apparatus for determining the range, radial velocity, and bearing angles of scattering objects reflecting RF signals or for determining the range, radial velocity, and bearing angles of sources RF signals. An array of antenna elements is utilized, the array of antenna elements each having an associated two state modulator wherein transmitted and/or received energy is phase encoded according to a sequence of multibit codes, the multibit codes each having two states with approximately a 50% probability for each of the two states occurring in each given multibit code in said sequence of multibit codes, thereby allowing the determination of range, radial velocity, and bearing angles through digital computation after the scattered signals have been received. | 07-04-2013 |
20130087407 | High Bandwidth Antiresonant Membrane - A membrane is disclosed. The membrane contains a first weight disposed at a center portion of the membrane, and a first hinge structure disposed away from the center portion of the membrane. | 04-11-2013 |
20130050829 | BEAMSPLITTER AND METHOD OF BEAMSPLITTING - A beamsplitter for splitting the light of an incident beam into four separate beams. The beamsplitter includes a pair of gratings each disposed preferably normal to the incident beam and having grating vectors preferably orthogonal to one another. The pair of gratings may be formed on opposite sides of a common substrate. A method of splitting an incident, collimated beam of light of a given wavelength into four separate collimated beams each disposed at angles of elevation θ | 02-28-2013 |
20130009724 | NON-FOSTER CIRCUIT STABILIZATION METHOD - A method of and circuit for improving stabilization of a non-Foster circuit. The method comprises steps of and the circuit includes means for measuring a noise hump power at an antenna port or an output port of the non-Foster circuit, comparing the measured noise hump power with a desired level of noise power that corresponds to a desired operating state of the non-Foster circuit, and tuning the non-Foster circuit to generate the desired level of noise power to achieve the desired operating state of the non-Foster circuit. | 01-10-2013 |
20130009722 | WIDE BANDWIDTH AUTOMATIC TUNING CIRCUIT - An automatic tuning circuit for matching an antenna to a radio receiver. The automatic tuning circuit includes a tunable non-Foster circuit for coupling the receiver and the antenna; and sensing and feedback circuits for sensing the combined capacitance of the tunable non-Foster circuit and the antenna and for tuning the tunable non-Foster circuit to automatically minimize the combined capacitance of the tunable non-Foster circuit and the antenna. | 01-10-2013 |
20130009720 | WIDE BANDWIDTH AUTOMATIC TUNING CIRCUIT - An automatic tuning circuit for matching an antenna to a radio receiver. The automatic tuning circuit includes a tunable non-Foster circuit for coupling the receiver and the antenna; and sensing and feedback circuits for sensing the combined capacitance of the tunable non-Foster circuit and the antenna and for tuning the tunable non-Foster circuit to automatically minimize the combined capacitance of the tunable non-Foster circuit and the antenna. | 01-10-2013 |
20130001646 | ALGaN/GaN HYBRID MOS-HFET - A field effect transistor (FET) includes source and drain electrodes, a channel layer, a barrier layer over the channel layer, a passivation layer covering the barrier layer for passivating the barrier layer, a gate electrode extending through the barrier layer and the passivation layer, and a gate dielectric surrounding a portion of the gate electrode that extends through the barrier layer and the passivation layer, wherein the passivation layer is a first material and the gate dielectric is a second material, and the first material is different than the second material. | 01-03-2013 |
20120310871 | HIGH-ORDER TIME ENCODER BASED NEURON CIRCUIT - A spike domain circuit responsive to analog and/or spike domain input signals. The spike domain circuit has a hysteresis quantizer for generating a spike domain output signal z(t); a one bit DAC having an input which is coupled to receive the spike domain output signal z(t) output by the hysteresis quantizer and having an output which is coupled to a current summing node; and a second order filter stage having two inputs, one of said two inputs being coupled to receive the spike domain output signal z(t) output by the hysteresis quantizer and the other of the two inputs being coupled to receive current summed at said current summing node. The second order filter stage has an output coupled to an input of the hysteresis quantizer. The current summing node also receives signals related to the analog and/or spike domain input signals to which the circuit is responsive. The circuit may serve as a neural node and many such circuits may be utilized together to model neurons with complex biological dynamics. | 12-06-2012 |
20120307336 | Programmable Optical Label - The present invention is a programmable and latching retro-reflective construct suitable for use as an optical label in an optical labeling system. The invention contains retro-reflective structures such as lens beads, corner cubes or other retro-reflecting type structures. The retro-reflective construct further comprises a wavelength selective, programmable and latching reflecting structure located at the reflecting surfaces of the retro-reflective structures. The optical construct can optionally contain additional optical filtering structures. Methods for fabricating the invention are also described. | 12-06-2012 |
20120256811 | Widebrand Adaptable Artificial Impedance Surface - A tunable impedance surface, the tunable surface including a plurality of elements disposed in a two dimensional array; and an arrangement of variable negative reactance circuits for controllably varying negative reactance between at least selected ones of adjacent elements in the aforementioned two dimensional array. | 10-11-2012 |
20120256709 | Differential negative impedance converters and inverters with variable or tunable conversion ratios - A differential circuit topology that produces a tunable floating negative inductance, negative capacitance, negative resistance/conductance, or a combination of the three. These circuits are commonly referred to as “non-Foster circuits.” The disclosed embodiments of the circuits comprises two differential pairs of transistors that are cross-coupled, a load immittance, multiple current sources, two Common-Mode FeedBack (CMFB) networks, at least one tunable (variable) resistance, and two terminals across which the desired immittance is present. The disclosed embodiments of the circuits may be configured as either a Negative Impedance Inverter (NII) or a Negative Impedance Converter (NIC) and as either Open-Circuit-Stable (OCS) and Short-Circuit-Stable (SCS). | 10-11-2012 |
20120211800 | GaN HEMTs with a Back Gate Connected to the Source - The present invention reduces the dynamic on resistance in the channel layer of a GaN device by etching a void in the nucleation and buffer layers between the gate and the drain. This void and the underside of the device substrate may be plated to form a back gate metal layer. The present invention increases the device breakdown voltage by reducing the electric field strength from the gate to the drain of a HEMT. This electric field strength is reduced by placing a back gate metal layer below the active region of the channel. The back gate metal layer may be in electrical contact with the source or drain. | 08-23-2012 |
20120144205 | Cryptographic Architecture with Instruction Masking and other Techniques for Thwarting Differential Power Analysis - An apparatus and method for preventing information leakage attacks that utilize timeline alignment. The apparatus and method inserts a random number of instructions into an encryption algorithm such that the leaked information can not be aligned in time to allow an attacker to break the encryption. | 06-07-2012 |
20120026068 | TUNABLE FREQUENCY SELECTIVE SURFACE - An apparatus and methods for operating a frequency selective surface are disclosed. The apparatus can be tuned to an on/off state or transmit/reflect electromagnetic energy in any frequency. The methods disclosed teach how to tune the frequency selective surface to an on/off state or transmit/reflect electromagnetic energy in any frequency. | 02-02-2012 |
20110229823 | FUEL CELL FABRICATION USING PHOTOPOLYMER BASED PROCESSES - A method for fabricating a fuel cell component includes the steps of providing a mask having a plurality of radiation transparent apertures, a radiation-sensitive material having a sensitivity to the plurality of radiation beams, and a flow field layer. The radiation-sensitive material is disposed on the flow field layer. The radiation-sensitive material is then exposed to the plurality of radiation beams through the radiation transparent apertures in the mask to form a diffusion medium layer with a micro-truss structure. | 09-22-2011 |
20110099136 | METHOD AND SYSTEM FOR CONCURRENT EVENT FORECASTING - A method and system for characterizing, detecting, and predicting or forecasting multiple target events from a past history of these events includes compressing temporal data streams into self-organizing map (SOM) clusters, and determining trajectories of the temporal streams via the clusters to predict the multiple target events. The system includes an evolutionary multi-objective optimization (EMO) module for processing the temporal data streams, which are obtained from a plurality of heterogeneous domains; a SOM module for characterizing the temporal data streams into self-organizing map clusters; and a target event prediction (TEP) module for generating prediction models of the map clusters. The SOM module employs a vector quantization method that places a set of vectors on a low-dimensional grid in an ordered fashion. The prediction models each include trajectories of the temporal data streams, and the system predicts the multiple target events using the trajectories. | 04-28-2011 |
20110071675 | VISUAL PERCEPTION SYSTEM AND METHOD FOR A HUMANOID ROBOT - A robotic system includes a humanoid robot with robotic joints each moveable using an actuator(s), and a distributed controller for controlling the movement of each of the robotic joints. The controller includes a visual perception module (VPM) for visually identifying and tracking an object in the field of view of the robot under threshold lighting conditions. The VPM includes optical devices for collecting an image of the object, a positional extraction device, and a host machine having an algorithm for processing the image and positional information. The algorithm visually identifies and tracks the object, and automatically adapts an exposure time of the optical devices to prevent feature data loss of the image under the threshold lighting conditions. A method of identifying and tracking the object includes collecting the image, extracting positional information of the object, and automatically adapting the exposure time to thereby prevent feature data loss of the image. | 03-24-2011 |
20100116318 | PIXELATED PHOTOVOLTAIC ARRAY METHOD AND APPARATUS - The present invention comprises a method and apparatus to increase the efficiency of photovoltaic conversion of light into electrical power and to achieve operation at higher optical power and therefore higher electrical power. Preferred embodiments increase the efficiency of photovoltaic power conversion of any source of a beam of photons by spatially dividing the beams into a plurality of individual beamlets, each beamlet focusing on an active photovoltaic region. The preferred architecture of the apparatus of the invention comprises spatially separated photovoltaic cells to substantially match the pattern of the spatially separated plurality of beamlets. Preferred embodiments result in a significant reduction in ohmic losses and current shunting, thereby increasing photovoltaic conversion efficiencies. | 05-13-2010 |
20100073261 | TUNABLE FREQUENCY SELECTIVE SURFACE - An apparatus and methods for operating a frequency selective surface are disclosed. The apparatus can be tuned to an on/off state or transmit/reflect electromagnetic energy in any frequency. The methods disclosed teach how to tune the frequency selective surface to an on/off state or transmit/reflect electromagnetic energy in any frequency. | 03-25-2010 |
20100064493 | PIEZOELECTRIC ACTUATOR FOR TUNABLE ELECTRONIC COMPONENTS - An actuating assembly for tuning a circuit and a process for forming a carrier substrate containing a membrane, a conductive layer, and piezoelectric actuators are disclosed. The actuating assembly comprises a membrane overlying a circuit to be tuned, a conductive element connected with the membrane, and a piezoelectric arrangement. Changes in shape of the piezoelectric arrangement allow a deflection of the membrane and a corresponding controllable upward or downward movement of the conductive element. In the process, a membrane and a piezoelectric structure are formed on a substrate. | 03-18-2010 |
20100059793 | InP BASED HETEROJUNCTION BIPOLAR TRANSISTORS WITH EMITTER-UP AND EMITTER-DOWN PROFILES ON A COMMON WAFER - A wafer comprising at least one emitter-up Heterojunction Bipolar Transistor (HBT) and at least one emitter-down HBT on a common InP based semiconductor wafer. Isolation and N-type implants into the device layers differentiate an emitter-down HBT from an emitter-up HBT. The method for preparing a device comprises forming identical layers for all HBTs and performing ion implantation to differentiate an emitter-down HBT from an emitter-up HBT. | 03-11-2010 |
20100047986 | GROUP III-V COMPOUND SEMICONDUCTOR BASED HETEROJUNCTION BIPOLAR TRANSISTORS WITH VARIOUS COLLECTOR PROFILES ON A COMMON WAFER - A wafer comprising at least one high F | 02-25-2010 |
20100033062 | LOW FREQUENCY QUARTZ BASED MEMS RESONATORS AND METHOD OF FABRICATING THE SAME - A method for fabricating a low frequency quartz resonator includes metalizing a top-side of a quartz wafer with a metal etch stop, depositing a first metal layer over the metal etch stop, patterning the first metal layer to form a top electrode, bonding the quartz wafer to a silicon handle, thinning the quartz wafer to a desired thickness, depositing on a bottom-side of the quartz wafer a hard etch mask, etching the quartz wafer to form a quartz area for the resonator and to form a via through the quartz wafer, removing the hard etch mask without removing the metal etch stop, forming on the bottom side of the quartz wafer a bottom electrode for the low frequency quartz resonator, depositing metal for a substrate bond pad onto a host substrate wafer, bonding the quartz resonator to the substrate bond pad, and removing the silicon handle. | 02-11-2010 |
20090250725 | OHMIC METAL CONTACT PROTECTION USING AN ENCAPSULATION LAYER - A method for fabricating a semiconductor device which protects the ohmic metal contacts and the channel of the device during subsequent high temperature processing steps is explained. An encapsulation layer is used to cover the channel and ohmic metal contacts. The present invention provides a substrate on which a plurality of semiconductor layers are deposited. The semiconductor layers act as the channel of the device. The semiconductor layers are covered with an encapsulation layer. A portion of the encapsulation layer and the plurality of semiconductor layers are removed, wherein ohmic metal contacts are deposited. The ohmic metal contacts are then annealed to help reduce their resistance. The encapsulation layer ensures that the ohmic metal contacts do not migrate during the annealing step and that the channel is not harmed by the high temperatures needed during the annealing step. | 10-08-2009 |
20090208209 | RECONFIGURABLE OPTICAL FILTERS FORMED BY INTEGRATION OF ELECTRICALLY TUNABLE MICRORESONATORS - The present invention describes a microresonator that can be used as a 1:f variable coupler in a unit cell. It is described how a cascade of unit cells can be used to form a tunable, higher-order RF-filter with reconfigurable passbands. The disclosed filter structure can be utilized for the narrowband channelization of RF signals that have been modulated onto optical carriers. It is also disclosed how to utilize add/drop capabilities of the contemplated microdisks to confer connectivity and cascading in two dimensions. The present invention can conveniently provide a wavelength division multiplexing router, where an array of unit cells as provided herein can form a programmable optical switching matrix, through electronic programming of filter parameters. | 08-20-2009 |
20090208162 | UNIT-CELL ARRAY OPTICAL SIGNAL PROCESSOR - This invention provides a versatile unit cell as well as programmable and reconfigurable optical signal processors (such as optical-domain RF filters) that are constructed from arrays of those unit cells interconnected by optical waveguides. Each unit cell comprises an optical microdisk, an optical phase shifter, and at least one input/output optical waveguide, wherein the microdisk and the phase shifter are both optically connected to a common waveguide. | 08-20-2009 |
20090189799 | SMART CHAFF - A chaff element for interfering with radar signals. The chaff element has a dielectric substrate and a pair of elongate electrically conductive elements, having a total length of approximately one-half wavelength of the radar signals or otherwise tuned to the radar signals, disposed on the dielectric substrate. A switch is arranged to electrically couple the pair of elongate elements together in response to a control signal generated by an oscillator circuit and a battery. The chaff element can be used in a method of providing a countermeasure against radar signals. A plurality of chaff elements can be deployed in an airspace above a radar unit emitting a radar signal and interfere with the radar signal by opening and closing the switches of the chaff elements while deployed in said airspace above the radar unit. | 07-30-2009 |
20090189294 | LARGE AREA INTEGRATION OF QUARTZ RESONATORS WITH ELECTRONICS - Methods for integrating quartz-based resonators with electronics on a large area wafer through direct pick-and-place and flip-chip bonding or wafer-to-wafer bonding using handle wafers are described. The resulting combination of quartz-based resonators and large area electronics wafer solves the problem of the quartz-electronics substrate diameter mismatch and enables the integration of arrays of quartz devices of different frequencies with the same electronics. | 07-30-2009 |
20090186466 | SELF-MASKING DEFECT REMOVING METHOD - A method for removing defects from a semiconductor surface is disclosed. The surface of the semiconductor is first coated with a protective layer, which is later thinned to selectively reveal portions of the protruding defects. The defects are then removed by etching. Finally, also the protective layer is removed. According to the method, inadvertent thinning of the surface is prevented and removal of the defects is obtained. | 07-23-2009 |
20090170255 | INTEGRATED CIRCUIT MODIFICATION USING WELL IMPLANTS - A technique for and structures for camouflaging an integrated circuit structure. The integrated circuit structure is formed having a well of a first conductivity type under the gate region being disposed adjacent to active regions of a first conductivity type. The well forming an electrical path between the active regions regardless of any reasonable voltage applied to the integrated circuit structure. | 07-02-2009 |
20090147254 | INTEGRATED QUARTZ BIOLOGICAL SENSOR AND METHOD - A sensor integrates a quartz nanoresonator for mass detection and SERS for optical detection in a same cavity on a chip for redundancy in the detection of a species. | 06-11-2009 |
20090141815 | TIME-ENCODING-BASED HIGH-CAPACITY DIGITAL COMMUNICATION LINK - The present invention relates to a digital communication architecture based upon the concept of time encoding. In one aspect, systems provide time-encoding-based digital communication, the systems comprising a transmitter, a communication channel, and a receiver. In another aspect, methods for digital communication comprise time encoding digital input data and then transmitting the resultant asynchronous pulse signal to a receiver that converts the asynchronous pulse signal back into digital symbols. Methods of providing a digital communication link can include (i) providing digital symbols, (ii) time encoding the digital symbols to generate asynchronous pulse signals, (iii) communicating switching times of the signals to a receiver, and (iv) digitizing in parallel and reconstructing the digital symbols. The methods and systems of the invention can utilize existing chip-scale circuit technologies and can be characterized by link capacities of 50 Gbit/sec, 100 Gbit/sec, 200 Gbit/sec, or higher. | 06-04-2009 |
20090141780 | DOWN-CONVERTER AND UP-CONVERTER FOR TIME-ENCODED SIGNALS - The disclosed invention provides apparatus and methods that can convert frequencies of time-encoded signals. In one aspect, a down-converter circuit includes low-pass filters, a switch, a time encoder, and an output low-pass filter. In another aspect, an up-converter circuit includes an analog or digital input time encoder, low-pass filters, a switch, an output time encoder, and a time-encoded band-pass filter. In yet another aspect, a complete receiver system is provided. The receiver system can operate effectively with signals in the radio frequency range. | 06-04-2009 |