| Hong Kong Applied Science and Technology Research Institute Patent applications |
| Patent application number | Title | Published |
|---|
| 20110292346 | Hybrid Illumination System for Head-up Display - A head-up display including a hybrid illumination system is provided. A light mixing unit provides a substantially homogenous light source to a reflective display unit. A concentrating optics unit collects ambient light and directs it towards the light mixing unit. At the same time, an electrically-powered light source emits light which is directed towards the light mixing unit. One or more optical elements direct the ambient light and the light source light into the light mixing unit for homogenization. A condensing unit receives the homogenized light mixture and outputs the condensed light to a polarizing beam splitter. A reflective display modulates the light from the polarizing beam splitter with information from a source of electrical information signals back towards the polarizing beam splitter. A projection unit projects the modulated light to create an image on a windshield. | 12-01-2011 |
| 20100170725 | TOUCH SURFACE AND SYSTEM AND METHOD OF DETECTING TOUCH INPUT - A system and method for touch detection and a touch-responsive surface are provided. According to one embodiment, a “virtual” touch-sensitive surface in is provided in that a plurality of transmitter-sensor devices receive and calculate a touch by detecting position and movement on a touch surface. The touch surface includes a planar surface; a first transmitter-sensor device located at a first position proximate to the planar surface and a second transmitter-sensor device located at a second position proximate to the planar surface, wherein each of the transmitter-sensors includes a light beam emitter and a scanning micromirror to reflect the light beam across the planar surface. A processing unit is in operable communication with the first transmitter-sensor device and the second transmitter-sensor device, and the processing unit is configured to calculate the position of a touch on the planar surface based on one or more times of refection of the light beams. | 07-08-2010 |
| 20100128233 | LED LIGHT SHAPING DEVICE AND ILLUMINATION SYSTEM - An LED light shaping device and illumination system are provided. According to one embodiment, a light shaping lens is configured to shape light emitted from a light source and direct the light on a display panel for projection. The light shaping lens comprises a light input surface configured to receive light emitted from the light source a reflective surface configured to reflect at least part of the light received by the light source; and a light output surface having a first curvature in a first direction and a second curvature in a second direction, wherein the light output surface is configured to emit the light that is received by the light input surface and reflected by the reflective surface, and wherein the first curvature and the second curvature are configured to shape the light such that the emitted light has an oval cross section. | 05-27-2010 |
| 20100027274 | OPTICAL REFLECTOR - An optical reflector for emitting light generated from a light source, such as a light emitting diode. According to one embodiment, the optical reflector includes a plurality of panels forming a cavity, the cavity having a light receiving end and a light output end, the inner side of the cavity having a reflective surface, and wherein the cavity has a plurality of stepped layers along the inner surface of the cavity extending from the light receiving to the light output end; and wherein the light receiving end is configured to receive the light generated from the light source, and the stepped layers of the cavity are configured to reflect the light generated from the light source and emit the reflected light from the light output end in an asymmetrical distribution. Embodiments of present invention use a trapezoidal shape to create the asymmetrical output distribution. | 02-04-2010 |
| 20090302336 | SEMICONDUCTOR WAFERS AND SEMICONDUCTOR DEVICES AND METHODS OF MAKING SEMICONDUCTOR WAFERS AND DEVICES - Semiconductor wafers, semiconductor devices, and methods of making semiconductor wafers and devices are provided. Embodiments of the present invention are especially suitable for use with substrate substitution applications, such in the case of fabricating vertical LED. One embodiment of the present invention includes a method of making a semiconductor device, the method comprising providing a substrate; forming a plurality of polishing stops on the substrate; growing one or more buffer layers on the substrate; growing one or more epitaxial layers on the one or more buffer layers; and applying one or more metal layers to the one or more epitaxial layers. Additionally, the steps of affixing a second substrate to the one or more metal layers and removing the base substrate using a mechanical thinning process may be performed. | 12-10-2009 |
| 20090252950 | ALUMINA SUBSTRATE AND METHOD OF MAKING AN ALUMINA SUBSTRATE - An alumina substrate and method of making an alumina substrate using oxidation is provided. Generally, photoresist masks are used to protect selected areas of an aluminum layer. The unprotected or exposed areas of the aluminum layer are then oxidized during a photolithography process. The protected, unexposed areas of the aluminum layer retain their conductive properties while the oxidized areas are converted to alumina, or aluminum oxide, which is non-conductive. Accordingly, an alumina substrate having conductive areas of aluminum is formed. In one embodiment, the alumina substrate includes an alumina layer, one or more aluminum vias formed within the alumina layer, each of the one or more aluminum vias extending between the bottom of the alumina layer and the top of the alumina layer, wherein the one or more aluminum vias are integrally formed within the alumina layer. | 10-08-2009 |
| 20090218590 | METHOD OF PRODUCING THIN SEMICONDUCTOR STRUCTURES - A method of making a thin gallium-nitride (GaN)-based semiconductor structure is provided. According to one embodiment of the invention, the method includes the steps of providing a substrate; sequentially forming one or more semiconductor layers on the substrate; etching a pattern in the one or more semiconductor layers; depositing a dielectrics layer; forming a photoresist on a portion of the dielectrics layer, wherein the portion of the dielectrics layer is deposited on the one or more semiconductor layers; depositing a primer; removing the photoresist layer, wherein the primer on the photoresist is also removed; depositing a superhard material, wherein the superhard material forms in the pattern; and removing the substrate. Accordingly, the superhard material may be selectively deposited in only areas where the superhard material is desired. Vertical GaN-based light emitting devices may then be formed by cutting the semiconductor structure. | 09-03-2009 |
| 20090073720 | LIGHT GUIDING STRIP AND DOUBLE-SIDED PLANAR LIGHT APPARATUS - A light guiding strip and a double-sided planar light apparatus are provided. According to one embodiment of the present invention, the double-sided planar light apparatus includes a plurality of light guiding strips, wherein the plurality of light guiding strips are positioned in a planar arrangement, each of the plurality of light guiding strips including a first plurality of light emitting surfaces disposed toward a first direction and a second plurality of light emitting surfaces disposed toward a second direction, each of the plurality of light guiding strips further including a first end and a second end configured to receive light, wherein the plurality of light guiding strips emit light from the first and second plurality of light emitting surfaces. Reflectors and light diffusion patterns on the light guiding strips provide control and independence over the two sides of the planar light apparatus. | 03-19-2009 |
| 20080285337 | RECORDABLE ELECTRICAL MEMORY - A memory device includes memory cells each having a recordable layer between two metal layers, each memory cell being constructed and designed to change from a first state to a second state upon application of an initialization signal, and change from the second state to a third state upon application of a write signal. For a voltage within a specified range that is applied across the two metal layers, the memory cell has a lower resistance in the first state than in the second state, and has a higher resistance in the second state than in the third state. | 11-20-2008 |
| 20080285329 | RECORDABLE ELECTRICAL MEMORY - A memory device includes a plurality of memory cells each including a recordable layer between two metal layers, the recordable layer including a first sub-cell and a second sub-cell. Each memory cell is constructed and designed to change from an as-deposited state to an initialized state upon application of an initialization signal, from the initialized state to a first inscribed state upon application of a first write signal, and from the initialized state to a second inscribed state upon application of a second write signal. The memory cell has a resistor-like current-voltage (I-V) characteristic when in the as-deposited state, a diode-like I-V characteristic when in the initialized state, and resistor-like I-V characteristics when in the first and second inscribed states for voltages within a predetermined range. | 11-20-2008 |
