| HITACHI ULSI SYSTEMS CO., LTD. Patent applications |
| Patent application number | Title | Published |
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| 20130145084 | Electronic Apparatus - An electronic apparatus provided with a serial communication circuit achieving a baud rate adjustment with high precision is provided. For example, a bit width of each of a plurality of bits in received serial data is measured by a clock counter, and an average value of the bit width is calculated detecting its maximum value and minimum value. Moreover, for example, a maximum tolerance and a minimum tolerance are calculated as a value substantially 1.5 times the average value and a value substantially 0.5 times the average value, and determination is made as to whether or not the maximum value and the minimum value are within a range between the maximum tolerance and the minimum tolerance. If they are within the range, the corresponding average value is set in a baud rate setting register. | 06-06-2013 |
| 20120294081 | SEMICONDUCTOR DEVICE - In a sense circuit for DRAM memory cell a switch is provided between the bit line BL and local bit line LBL connected to the memory cells for isolation and coupling of these bit lines. The bit line BL is precharged to the voltage of VDL/2, while the local bit line LBL is precharged to the voltage of VDL. VDL is the maximum amplitude voltage of the bit line BL. A sense amplifier SA comprises a first circuit including a differential MOS pair having the gate connected to the bit line BL and a second circuit connected to the local bit line LBL for full amplitude amplification and for holding the data. When the bit line BL and local bit line LBL are capacitance-coupled via a capacitor, it is recommended to use a latch type sense amplifier SA connected to the local bit line LBL. | 11-22-2012 |
| 20120239865 | STORAGE DEVICE - A storage device realizing an improvement in rewrite endurance of a nonvolatile memory and an improvement in data transfer rate of write and read operations is provided including a nonvolatile memory; a volatile memory for storing file management information of the nonvolatile memory; a controller for controlling the nonvolatile memory and the volatile memory; and a power supply maintaining unit for supplying power to the nonvolatile memory, the volatile memory, or the controller upon power shutdown. The controller reads the file management information in the nonvolatile memory upon power-on and writes the same in the volatile memory, and read and write operations are performed based on the file management information in the volatile memory, and the file management information in the volatile memory is written in the nonvolatile memory upon power shutdown. | 09-20-2012 |
| 20120154965 | LEVEL CONVERSION CIRCUIT AND SEMICONDUCTOR INTEGRATED CIRCUIT DEVICE EMPLOYING THE LEVEL CONVERSION CIRCUIT - In a level conversion circuit mounted in an integrated circuit device using a plurality of high- and low-voltage power supplies, the input to the differential inputs are provided. In a level-down circuit, MOS transistors that are not supplied with 3.3 V between the gate and drain and between the gate and source use a thin oxide layer. In a level-up circuit, a logic operation function is provided. | 06-21-2012 |
| 20120069685 | Semiconductor device having optical fuse and electrical fuse - A semiconductor device includes a plurality of first chips, a second chip that controls the first chips, and internal wiring that connects the first chips and the second chip. The first chips each include: an optical fuse; a first latch circuit that retains information on the optical fuse; a second latch circuit that retains information on an electrical fuse, the information being supplied from the second chip through the internal wiring; and a select circuit that selects the information retained in either one of the first and second latch circuits. A redundancy determination signal is generated from the information selected. The information on the electrical fuse is transferred from the second chip to the first chips through the internal wiring. | 03-22-2012 |
| 20120009800 | MASS PRODUCTION METHOD OF SEMICONDUCTOR INTEGRATED CIRCUIT DEVICE AND MANUFACTURING METHOD OF ELECTRONIC DEVICE - In order to prevent the contamination of wafers made of a transition metal in a semiconductor mass production process, the mass production method of a semiconductor integrated circuit device of the invention comprises the steps of depositing an Ru film on individual wafers passing through a wafer process, removing the Ru film from outer edge portions of a device side and a back side of individual wafers, on which said Ru film has been deposited, by means of an aqueous solution containing orthoperiodic acid and nitric acid, and subjecting said individual wafers, from which said Ru film has been removed, to a lithographic step, an inspection step or a thermal treating step that is in common use relation with a plurality of wafers belonging to lower layer steps (an initial element formation step and a wiring step prior to the formation of a gate insulating film). | 01-12-2012 |
| 20110309428 | SEMICONDUCTOR DEVICE - A semiconductor device includes a plurality of nonvolatile memory cells ( | 12-22-2011 |
| 20110215414 | Semiconductor integrated circuit device with reduced leakage current - The gate tunnel leakage current is increased in the up-to-date process, so that it is necessary to reduce the gate tunnel leakage current in the LSI which is driven by a battery for use in a cellular phone and which needs to be in a standby mode at a low leakage current. In a semiconductor integrated circuit device, the ground source electrode lines of logic and memory circuits are kept at a ground potential in an active mode, and are kept at a voltage higher than the ground potential in an unselected standby mode. The gate tunnel leakage current can be reduced without destroying data. | 09-08-2011 |
| 20110215398 | METHOD OF FABRICATING SEMICONDUCTOR DEVICE - In a method of fabricating a semiconductor device having a MISFET of trench gate structure, a trench is formed from a major surface of a semiconductor layer of first conductivity type which serves as a drain region, in a depth direction of the semiconductor layer, a gate insulating film including a thermal oxide film and a deposited film is formed over the internal surface of the trench, and after a gate electrode has been formed in the trench, impurities are introduced into the semiconductor substrate of first conductivity type to form a semiconductor region of second conductivity type which serves as a channel forming region, and impurities are introduced into the semiconductor region of second conductivity type to form the semiconductor region of first conductivity type which serves as a source region. | 09-08-2011 |
| 20110199708 | LEVEL CONVERSION CIRCUIT AND SEMICONDUCTOR INTEGRATED CIRCUIT DEVICE EMPLOYING THE LEVEL CONVERSION CIRCUIT - In a level conversion circuit mounted in an integrated circuit device using a plurality of high- and low-voltage power supplies, the input to the differential inputs are provided. In a level-down circuit, MOS transistors that are not supplied with 3.3 V between the gate and drain and between the gate and source use a thin oxide layer. In a level-up circuit, a logic operation function is provided. | 08-18-2011 |
| 20110197108 | MEMORY CARD AND MEMORY CONTROLLER - A memory card has a plurality of non-volatile memories and a main controller for controlling the operation of the non-volatile memories. The main controller performs an access control to the non-volatile memories in response to an external access instruction, and an alternate control for alternating an access error-related storage area of the non-volatile memory with other storage area. In the access control, the speeding up of the data transfer between flash memories is achieved by causing the plurality of non-volatile memories to parallel access operate. In the alternation control, the storage areas is made alternative for each non-volatile memory in which an access error occurs. | 08-11-2011 |
| 20110140198 | SEMICONDUCTOR DEVICE AND METHOD FOR FABRICATING THE SAME - Described is a method for fabricating a semiconductor device having an FET of a trench-gate structure obtained by disposing a conductive layer, which will be a gate, in a trench extended in the main surface of a semiconductor substrate, wherein the upper surface of the trench-gate conductive layer is formed equal to or higher than the main surface of the semiconductor substrate. In addition, the conductive layer of the trench gate is formed to have a substantially flat or concave upper surface and the upper surface is formed equal to or higher than the main surface of the semiconductor substrate. Moreover, after etching of the semiconductor substrate to form the upper surface of the conductive layer of the trench gate equal to or higher than the main surface of the semiconductor substrate, a channel region and a source region are formed by ion implantation. The semiconductor device thus fabricated according to the present invention is free from occurrence of a source offset. | 06-16-2011 |
| 20100309741 | SEMICONDUCTOR DEVICE - The present invention provides a sense circuit for DRAM memory cell to cover the events that a sense time becomes remarkably longer when a power source voltage is lowered, a sense time under the low voltage condition becomes shorter when temperature rises and a sense time changes to a large extent for fluctuation of processes. The present invention provides the following typical effects. A switch means is provided between the bit line BL and local bit line LBL connected to the memory cells for isolation and coupling of these bit lines. The bit line BL is precharged to the voltage of VDL/2, while the local bit line LBL is precharged to the voltage of VDL. The VDL is the maximum amplitude voltage of the bit line BL. A sense amplifier SA comprises a first circuit including a differential MOS pair having the gate connected to the bit line BL and a second circuit connected to the local bit line LBL for full amplitude amplification and for holding the data. When the bit line BL and local bit line LBL are capacitance-coupled via a capacitor, it is recommended to use a latch type sense amplifier SA connected to the local bit line LBL. | 12-09-2010 |
| 20100252924 | SEMICONDUCTOR DEVICE AND A METHOD OF MANUFACTURING THE SAME - A semiconductor device includes plural electrode pads arranged in an active region of a semiconductor chip, and wiring layers provided below the plural electrode pads wherein occupation rates of wirings arranged within the regions of the electrode pads are, respectively, made uniform for every wiring layer. To this end, in a region where an occupation rate of wiring is smaller than those in other regions, a dummy wiring is provided. On the contrary, when the occupation rate of wiring is larger than in other regions, slits are formed in the wiring to control the wiring occupation rate. In the respective wirings layers, the shapes, sizes and intervals of wirings below the respective electrode pads are made similar or equal to one another. | 10-07-2010 |
| 20100193863 | SEMICONDUCTOR DEVICE AND METHOD FOR FABRICATING THE SAME - Described is a method for fabricating a semiconductor device having an FET of a trench-gate structure obtained by disposing a conductive layer, which will be a gate, in a trench extended in the main surface of a semiconductor substrate, wherein the upper surface of the trench-gate conductive layer is formed equal to or higher than the main surface of the semiconductor substrate. In addition, the conductive layer of the trench gate is formed to have a substantially flat or concave upper surface and the upper surface is formed equal to or higher than the main surface of the semiconductor substrate. Moreover, after etching of the semiconductor substrate to form the upper surface of the conductive layer of the trench gate equal to or higher than the main surface of the semiconductor substrate, a channel region and a source region are formed by ion implantation. The semiconductor device thus fabricated according to the present invention is free from occurrence of a source offset. | 08-05-2010 |
| 20100173461 | METHOD OF FABRICATING SEMICONDUCTOR DEVICE - In a method of fabricating a semiconductor device having a MISFET of trench gate structure, a trench is formed from a major surface of a semiconductor layer of first conductivity type which serves as a drain region, in a depth direction of the semiconductor layer, a gate insulating film including a thermal oxide film and a deposited film is formed over the internal surface of the trench, and after a gate electrode has been formed in the trench, impurities are introduced into the semiconductor substrate of first conductivity type to form a semiconductor region of second conductivity type which serves as a channel forming region, and impurities are introduced into the semiconductor region of second conductivity type to form the semiconductor region of first conductivity type which serves as a source region. | 07-08-2010 |
| 20100157689 | SEMICONDUCTOR DEVICE - A semiconductor device includes a plurality of nonvolatile memory cells ( | 06-24-2010 |
| 20090269899 | Semiconductor integrated circuit device with reduced leakage current - The gate tunnel leakage current is increased in the up-to-date process, so that it is necessary to reduce the gate tunnel leakage current in the LSI which is driven by a battery for use in a cellular phone and which needs to be in a standby mode at a low leakage current. In a semiconductor integrated circuit device, the ground source electrode lines of logic and memory circuits are kept at a ground potential in an active mode, and are kept at a voltage higher than the ground potential in an unselected standby mode. The gate tunnel leakage current can be reduced without destroying data. | 10-29-2009 |
| 20090250680 | SEMICONDUCTOR INTEGRATED CIRCUIT DEVICE - With a high-speed nonvolatile phase change memory, reliability in respect of the number of refresh times is enhanced. In a memory cell forming area of a phase change memory using a MISFET as a transistor for selection of memory cells, a phase change material layer of a memory cell comprising a resistor element, using a phase change material, is formed for common use. As a result, variation in shape and a change in composition of the phase change material, caused by isolation of memory cell elements by etching, are reduced, thereby enhancing reliability of memory cells, in respect of the number of refresh times. | 10-08-2009 |
| 20090219069 | Semiconductor integrated circuit device - Circuit elements and wirings constituting a circuit, and first electrodes electrically connected to such a circuit are provided on one main surface of a semiconductor substrate. An organic insulating film is formed on the circuit except for openings on the surfaces of the first electrodes. First and second external connecting electrodes are provided on the organic insulating film. At least one conductive layer for electrically connecting the first and second external connecting electrodes and the first electrodes is placed on the organic insulating film. | 09-03-2009 |
| 20090213649 | Semiconductor processing device and IC card - A semiconductor processing device according to the invention includes a first non-volatile memory ( | 08-27-2009 |
| 20090187703 | MEMORY CARD AND ITS INITIAL SETTING METHOD - In the initial setting of a memory card | 07-23-2009 |
| 20090181721 | IC CARD - A multifunction IC card (MFC) has compatibility with a multimedia card, an SD card, etc. in that connector terminals (# | 07-16-2009 |
| 20090065593 | IC CARD AND AN ADAPTER FOR THE SAME - An IC card and card adapters are designed so that the IC card of a specific standard (e.g., MMC standard) is compatible with IC cards and terminals of other standards (e.g., MS card standard and USB terminal standard). In the IC card (MMC), a controller IC, which is connected to a flash memory, includes a voltage pull-down detector, a mode controller, a USB-mode interface controller, a MS-mode interface controller, and an MMC/SD-mode interface controller. The card adapters suffice to have component parts which are easy in formation and low in cost such as wiring lines and resistors. The voltage pull-down detector of the IC card detects the voltage pull-down caused by the resistors, and the mode controller selects the USB-mode interface controller, MS-mode interface controller or MMC/SD-mode interface controller so that the IC card becomes compatible with the corresponding IC card standard. | 03-12-2009 |
| 20090027984 | SEMICONDUCTOR DEVICE - The present invention provides a sense circuit for DRAM memory cell to cover the events that a sense time becomes remarkably longer when a power source voltage is lowered, a sense time under the low voltage condition becomes shorter when temperature rises and a sense time changes to a large extent for fluctuation of processes. The present invention provides the following typical effects. A switch means is provided between the bit line BL and local bit line LBL connected to the memory cells for isolation and coupling of these bit lines. The bit line BL is precharged to the voltage of VDL/2, while the local bit line LBL is precharged to the voltage of VDL. The VDL is the maximum amplitude voltage of the bit line BL. A sense amplifier SA comprises a first circuit including a differential MOS pair having the gate connected to the bit line BL and a second circuit connected to the local bit line LBL for full amplitude amplification and for holding the data. When the bit line BL and local bit line LBL are capacitance-coupled via a capacitor, it is recommended to use a latch type sense amplifier SA connected to bit line LBL. | 01-29-2009 |
| 20090010072 | SEMICONDUCTOR DEVICE - A semiconductor device includes a plurality of nonvolatile memory cells ( | 01-08-2009 |
| 20080247258 | SEMICONDUCTOR MEMORY DEVICE AND SEMICONDUCTOR INTEGRATED CIRCUIT DEVICE - A leakage current of the MOS transistor of a power control section at a standby time is drastically reduced and the reduction of the consumption power is achieved. A memory module is provided with power control sections. When either of the memory mats is not selected, the power control sections stop the power supply voltage to a non-selected memory mat, a word driver, an input-output circuit, a control circuit and an output circuit. At the standby time of the memory module, the power control section stops a power supply to power control sections, a control circuit, a predecoder circuit, and an input circuit. In this manner, the leakage current of the MOS transistor of the power control sections at the standby time can be drastically reduced. | 10-09-2008 |
| 20080229164 | MEMORY CARD AND MEMORY CONTROLLER - A memory card includes a non-volatile memory, a memory controller for controlling the operation of the memory card. The memory controller is capable of providing an interface with outside according to a predetermined protocol, and performs error detection and correction of the memory information at regular time intervals or at the timing of connection of electric power supply, independently of reading out the memory information according to external access request. Therefore, it is possible to improve reliability of data retention in the non-volatile memory without the host device reading out the memory information from the non-volatile memory of the memory card. | 09-18-2008 |
