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HITACHI CABLE, LTD.

HITACHI CABLE, LTD. Patent applications
Patent application numberTitlePublished
20120128915GaAs Wafer And Method For Manufacturing The GaAs Wafer - There is provided a method for manufacturing a GaAs wafer comprising: growing a GaAs single crystal by an LEC method; and fabricating a GaAs wafer by slicing the GaAs single crystal obtained by growing the GaAs single crystal, wherein in growing the GaAs single crystal, a crystal-melt interface between the GaAs single crystal and a raw material melt is formed into a convex-shape toward the raw material melt side, and a ratio T05-24-2012
20120128005NETWORK RELAY SYSTEM AND METHOD OF AUTOMATICALLY SETTING A NETWORK RELAY SYSTEM05-24-2012
20120127853NETWORK RELAY SYSTEM AND METHOD OF CONTROLLING A NETWORK RELAY SYSTEM - A network relay system (05-24-2012
20120126259LIGHT EMITTING DIODE - A light emitting diode, comprising: a transparent substrate; a wiring layer; and a semiconductor light emitting element structure part between the transparent substrate and the wiring layer, the semiconductor light emitting element structure part further comprising: a semiconductor light emitting layer; a transparent conductive layer provided on the wiring layer side of the semiconductor light emitting layer; a transparent insulating film; a metal reflection layer; and a first electrode part and a second electrode part provided on the wiring layer side of the transparent insulating film, to be electrically connected to the wiring layer, wherein the first electrode part is electrically connected to the first semiconductor layer via a first contact part which is provided to pass through the transparent insulating film, and the second electrode part is electrically connected to the second semiconductor layer by a second contact part provided to pass through the transparent insulating film, the transparent conductive layer, the first semiconductor layer, and the active layer.05-24-2012
20120115548Mobile communication base station antenna and mobile communication base station antenna system - A mobile communication base station antenna has two array antennas juxtaposed in a horizontal direction. Each of the array antennas includes a plurality of antenna element pairs arranged in a vertical direction. Each of the antenna element pairs includes two antenna elements having polarization characteristics perpendicular to each other. A shield plate is provided between the two array antennas. The plurality of antenna element pairs of each of the two array antennas are classified into a first group of M-antenna element pairs, a second group of N-antenna element pairs, and a third group of P-antenna element pairs from one end to another end of the two array antennas (M, N, and P are positive integers, respectively). The electric power is fed from one feeding point to the antenna elements of the first and third group of one of the two array antennas and the antenna elements of the second group of another of the two array antennas, and a tilt angle of the two array antennas with respect to a horizontal plane is set to be a predetermined tilt angle by electrical tilting.05-10-2012
20120112014Cable clamp - A cable clamp includes a single metal plate shaped along an outer periphery of three cables that are triangularly arranged when viewed in cross-section, a mounting flange portion formed with both end portions of the metal plate overlapped each other, and a cable support member inserted between at least two of the three cables so as to support the at least two cables between itself and the metal plate. The cable support member is inserted between two horizontally arranged cables in a direction perpendicular to the horizontal direction as well as perpendicular to a longitudinal direction of the two horizontally arranged cables. The cable support member has a tapered shape on an end side in an insertion direction thereof for facilitating an insertion thereof into a gap between the two horizontally arranged cables.05-10-2012
20120111604Conducting path - A conducting path includes three cables, and a cable clamp for fixing the three cables. The cable clamp includes a metal plate formed along an outer periphery of the three cables that are triangularly arranged when viewed in cross-section and a mounting flange portion formed with both end portions of the metal plate overlapped each other, and two of the three cables are integrated to form an integral cable.05-10-2012
20120111600AQUEOUS ABSORPTIVE POLYMER-CONTAINING RESIN COMPOSITION-PRODUCING METHOD, AQUEOUS ABSORPTIVE POLYMER-CONTAINING RESIN COMPOSITION, AND POROUS SUBSTANCE-PRODUCING METHOD USING SAME AND POROUS SUBSTANCE, INSULATED ELECTRIC CABLE-PRODUCING METHOD, INSULATED ELECTRIC CABLE AND COAXIAL CABLE - A method for producing an aqueous absorptive polymer-containing resin composition in which a resin composition is doped with an aqueous absorptive polymer includes causing the aqueous absorptive polymer to absorb and be swollen by water beforehand, and milling and microparticulating the water-absorbed and -swollen absorptive polymer at an ultrasonic flow pressure of not less than 50 MPa.05-10-2012
20120111125PRESSURE-SENSITIVE SENSOR PRODUCTION METHOD AND PRESSURE-SENSITIVE SENSOR - Two electrode wires longitudinally provided along the inner surface of an elastic insulating member having a hollow portion are exposed from said elastic insulating member, the resistive element comprising a resistor body and the resistive element's lead wires is formed into a U-letter shape, said two electrode wires exposed from said elastic insulating member and said resistive element's lead wires are electrically connected via one metal plate, and a portion wherein one of said two electrode wires and one of the lead wires extending from both ends of said resistor body are electrically connected and a portion wherein the other one of said two electrode wires and the other one of the lead wires extending from both ends of said resistor body are electrically connected are separated by cutting said one metal plate.05-10-2012
20120108437Precursor for Nb3Sn superconductor wire, superconductor wire using the same and method for manufacturing Nb3Sn superconductor wire - A precursor for a Nb05-03-2012
20120104557Method for manufacturing a group III nitride crystal, method for manufacturing a group III nitride template, group III nitride crystal and group III nitride template - A method for manufacturing a group III nitride crystal includes a step of mixing a group III source material and ammonia in a reactor including quartz, and growing a group III nitride crystal on a support substrate by a vapor deposition. The group III source material is an organic metal source material containing Al. The organic metal source material is mixed with a hydrogen halide gas and the mixture of the organic metal source material and the hydrogen halide gas is supplied to the reactor.05-03-2012
20120100390Weldment and method of manufacturing the same - A weldment includes metal materials that are welded to each other. At least one of the metal materials includes pure copper including an inevitable impurity, more than 2 mass ppm of oxygen, and an additive element selected from the group consisting of Mg, Zr, Nb, Fe, Si, Al, Ca, V, Ni, Mn, Ti and Cr. A method of manufacturing a weldment includes melting a dilute copper alloy material by SCR continuous casting and rolling at a molten copper temperature of not less than 1100° C. and not more than 1320° C. to make a molten metal, forming a cast bar from the molten metal, forming a dilute copper alloy member by hot-rolling the cast bar, and welding the dilute copper alloy member to a metal material. The dilute copper alloy material includes the pure copper, more than 2 mass ppm of oxygen, and the additive element,04-26-2012
20120097904Dilute copper alloy material and method of manufacturing dilute copper alloy member excellent in characteristics of resistance to hydrogen embrittlement - A dilute copper alloy material used in an environment with presence of hydrogen includes pure copper including an inevitable impurity, more than 2 mass ppm of oxygen, and an additive element selected from the group consisting of Mg, Zr, Nb, Ca, V, Fe, Al, Si, Ni, Mn, Ti and Cr, the additive element being capable of forming an oxide in combination with the oxygen. A method of manufacturing a dilute copper alloy member excellent in characteristics of resistance to hydrogen embrittlement includes melting the dilute copper alloy material by SCR continuous casting and rolling at a copper melting temperature of not less than 1100° C. and not more than 1320° C. to make molten metal, forming a cast bar from the molten metal, and forming the dilute copper alloy member by hot-rolling the cast bar.04-26-2012
20120097422FLEXIBLE FLAT CABLE AND METHOD OF MANUFACTURING THE SAME - The present invention provides a flexible flat cable having high conductivity and high bending durability, and a method for manufacturing the same. The present invention is a flexible flat cable comprising conductors and insulating films applied over the conductors, wherein the conductor is comprised of at least one additive element selected from the group consisting of magnesium (Mg), zirconium (Zr), niobium (Nb), calcium (Ca), vanadium (V), nickel (Ni), manganese (Mn), titanium (Ti), and chromium (Cr); 2 mass-% or more of oxygen; and the balance being inevitable impurity and copper, wherein the conductor has such a recrystallized texture that the size of crystal grains in the inner area of the conductor is large and that of in the surface area thereof is smaller than that of the inner area, wherein both sides of the conductor are sandwiched between insulating films.04-26-2012
20120097420Audio/video cable - An audio/video cable includes a plurality of parallel arranged insulated wires or twisted pair insulated wires each including a copper conductor and an insulation layer formed on a periphery thereof. The copper conductor includes a soft dilute copper alloy material containing pure copper, an additive element and an inevitable impurity as a balance. The soft dilute copper alloy material includes a recrystallized structure having a grain size distribution such that crystal grains in a surface layer are smaller than internal crystal grains. The surface layer includes a crystal structure such that an average crystal grain size from a surface of the surface layer up to a depth of 50 μm toward inside of the soft dilute copper alloy material is not more than 20 μm.04-26-2012
20120090871HYDROUS WATER ABSORBENT POLYMER DISPERSED ULTRAVIOLET CURABLE RESIN COMPOSITION, INSULATED ELECTRIC WIRE USING THE SAME, METHOD FOR PRODUCING THE WIRE, AND COAXIAL CABLE - A hydrous water absorbent polymer dispersed ultraviolet curable resin composition includes an ultraviolet curable resin composition, and a hydrous water absorbent polymer swollen by water beforehand, and dispersed in the ultraviolet curable resin composition so that the hydrous water absorbent polymer dispersed ultraviolet curable resin composition has a moisture content of not less than 50 percent. The water absorption rate of the ultraviolet curable resin composition is not more than 2 percent.04-19-2012
20120090865Method of manufacturing porous ultraviolet curable resin coated wire, porous ultraviolet curable resin coated wire and coaxial cable - A method of manufacturing a porous ultraviolet curable resin coated wire includes (a) preparing an ultraviolet curable resin composition not including a hydrous water absorbent polymer, (b) preparing a hydrous water absorbent polymer-dispersed ultraviolet curable resin composition having a water content of 40% or more by preparing a water-swollen hydrous water absorbent polymer including a water absorbent polymer and water, and then dispersing the hydrous water absorbent polymer into the ultraviolet curable resin composition, (c) forming a two-layer structure on a metal wire by coating the metal wire with the ultraviolet curable resin composition not including the hydrous water absorbent polymer and the hydrous water absorbent polymer, and (d) performing a dehydration on the two-layer structure.04-19-2012
20120086030Light-emitting element - A light-emitting element includes a semiconductor substrate, a light emitting portion including an active layer, a reflective portion between the semiconductor substrate and the light emitting portion, and a current dispersion layer on the light emitting portion. The reflective portion includes a plurality of pair layers each including a first semiconductor layer and a second semiconductor layer. The first semiconductor layer has a thickness T04-12-2012
20120085577Cable fixing member - A cable fixing member formed of one belt-like metal plate bent to fix three cables to a structure includes two flanges formed at both ends of the metal plate, two C-shaped holding portions formed to be bent into C-shapes in cross section on both sides respectively of a reference portion of the metal plate to hold two of the three cables in the C-shaped holding portions respectively, and two semicircular arc portions formed to be bent into semicircular arc shapes in cross section between the C-shaped holding portions and the flanges on both the sides respectively of the reference portion of the metal plate so that the two semicircular arc portions face each other to hold one of the three cables therebetween. The three cables are held so that the three cables are arranged to form a triangular shape in transverse cross sectional view.04-12-2012
20120082168COMMUNICATION MODULE AND COMMUNICATION APPARATUS - A communication module mounted on a communication apparatus includes a communication apparatus main body including a plurality of slots, and being insertable into or removable from the slots, a plurality of apparatus side signal processing circuits for processing a communication signal which is transmitted to or received from the communication module, and a switch LSI for changing a destination of the communication signal. The communication module includes a switching portion for performing dividing the communication signal transmitted or received at a communication speed of the communication module, and combining the communication signals transmitted or received at a communication speed of an external apparatus, a connector including a plurality of input-output ports, each of the plurality of the input-output ports being connected to the external apparatus respectively, and a plurality of connecting terminals being connected to the communication apparatus main body when the communication module is inserted into the slots.04-05-2012
20120079328INFORMATION PROCESSING APPARATUS03-29-2012
20120077360Connector - A connector includes a first terminal housing with a plurality of first joining terminals aligned and accommodated therein, a second terminal housing with a plurality of second joining terminals aligned and accommodated therein, a connecting member for pressing and thereby collectively fixing the plural first joining terminals and the plural second joining terminals at the contacts therebetween respectively, and a covering member slidably provided to cover the connecting member, to maintain the pressing force of the pressed connecting member at a specified or greater pressing force that assures the stable connections between the first joining terminals and the second joining terminals, respectively, the covering member being provided in such a manner that it is not slidable to cover the connecting member until the pressing force of the connecting member reaches the pressing force that assures the stable connections between the first joining terminals and the second joining terminals, respectively.03-29-2012
20120073331OPTICAL FIBER END PROCESSING METHOD AND OPTICAL FIBER END PROCESSING APPARATUS - There is provide an optical fiber end processing method, for processing an end portion of an optical fiber having a core and a clad surrounding the core, comprising: fixing two places of the optical fiber; firstly heating a part at a tip end side of the optical fiber between fixed parts fixed at two places, thereby melting the optical fiber at the heated part at the tip end side; secondly heating a part at a base end side of the optical fiber between the fixed parts away from the heated part at the tip end side in a state that the optical fiber is fixed at two places, thereby forming an expanded core region which is formed by expanding a diameter of the core by diffusing the dopant included in the optical fiber; and removing at least the heated part at the tip end side.03-29-2012
20120073330OPTICAL FIBER END PROCESSING METHOD AND OPTICAL FIBER END PROCESSING APPARATUS - An optical fiber end processing method includes the steps of: an optical fiber fixing step of fixing two parts of the optical fiber; a first heating step of heating a tip end side part of the optical fiber between two fixed parts fixed in the optical fiber fixing step, and melting the optical fiber of the tip end side heating part; a second heating step of heating a part on a base end side of the optical fiber between the fixed parts away from the tip end side heating part in a state that two parts of the optical fiber are fixed, and making the holes of the optical fiber disappear; and a removing step of removing the tip end side heating part after the second heating step.03-29-2012
20120064754Direct attach cable - A direct attach cable includes a cable connected to a paddle card, a housing formed to store the paddle card and the end portion of the cable, a latch engaged with an engaging portion of a plate spring provided on the cage when the housing is inserted in the cage, a de-latching lever in a lever shape for releasing the engagement between the latch and the plate spring, the de-latching lever pushing up the plate spring to disengage the engaging portion of the plate spring from the latch, a link formed in a frame shape so as to be fitted to the housing on the rear end side in the insertion direction, the link pushing up the plate spring via the de-latching lever by moving toward the rear end side, and a pull-tab for moving the link on the rear end side of the housing in the insertion direction.03-15-2012
20120062440MOBILE COMMUNICATION BASE STATION ANTENNA - A mobile communication base station antenna has a first array antenna and a second array antenna. Antenna elements of the first and second array antennas are classified into the first, second and third groups G03-15-2012
20120061140Connection structure and a connection method for connecting a differential signal transmission cable to a circuit board - A connection structure for connecting a differential signal transmission cable to a circuit board. A differential signal transmission cable includes an outer conductor provided around a pair of signal line conductors via an insulator. Parts of the signal line conductors are exposed from a tip of the differential signal transmission cable. A circuit board is provided with a pair of signal pads and a ground pad. A shield-connecting terminal includes a main body which is crimp-connected to the outer conductor and a solder-connecting pin which is solder-connected to the ground pad. The exposed parts of the signal line conductors are solder-connected to the signal pads, respectively, and the outer conductor is solder-connected to the ground pad via the solder-connecting pin of the shield-connecting terminal.03-15-2012
20120056508Method for manufacturing a piezoelectric film wafer, piezolelectric film element, and piezoelectric film device - A method for manufacturing a piezoelectric film wafer includes an etching step for carrying out a dry etching on a piezoelectric film formed on a substrate by using a gas containing Ar, and a step of changing a rate of the dry etching by detecting a change in an emission peak intensity of Na in emitted ion plasma the piezoelectric film. The piezoelectric film is made of an alkali niobate-based perovskite structure expressed in a composition formula (K03-08-2012
20120034395PROCESSING METHOD - A processing method includes disposing a workpiece having a processed surface in a processing solution, disposing a photocatalyst film in the processing solution opposite the processed surface, irradiating the photocatalyst film with a light, so as to generate active species from the processing solution by a photocatalytic action of the photocatalyst film, controlling a diffusion distance of the active species in the processing solution by a radical scavenger added to the processing solution, and chemically reacting the active species with surface atoms of the processed surface and generating a chemical compound to be eluted in the processing solution, so as to process the workpiece.02-09-2012
20120027364OPTICAL MODULE - An optical component of an optical module has a junction surface facing an optical connector and a pair of side surfaces apart from each other in a direction perpendicular to a connection direction of the optical connector. A support member has a pair of sidewalls facing the side surfaces of the optical component respectively and concave/convex portions provided in the sidewalls and concave or convex toward the side surfaces of the optical component. The side surfaces of the optical component are fixed to the sidewalls of the support member via an adhesive, and the adhesive is also applied on surfaces of the concave/convex portions of the sidewalls.02-02-2012
20120025668Piezoelectric thin film element - A piezoelectric thin film element includes a bottom electrode, a piezoelectric layer, and a top electrode on a substrate. The piezoelectric layer includes, as a main phase, a perovskite-type oxide. The bottom electrode has a surface roughness of not more than 0.86 nm in arithmetic mean roughness Ra or not more than 1.1 nm in root mean square roughness Rms. The bottom electrode has a (111) preferential orientation in a direction perpendicular to the substrate.02-02-2012
20120025667Method for manufacturing a piezoelectric film wafer, piezoelectric film element, and piezoelectric film device - A method for manufacturing a piezoelectric film wafer includes a first processing step for carrying out an ion etching on a KNN piezoelectric film formed on a substrate by using a gas containing Ar, and a second processing step for carrying out a reactive ion etching by using a mixed etching gas containing a fluorine-based reactive gas and Ar after the first processing step.02-02-2012
20120024599OIL-COOLED EQUIPMENT HARNESS - An oil-cooled equipment harness includes a shielded wire including a conductor, a shielding layer on a periphery of the conductor, and a flexibility, a terminal fitting enclosing a front end part of the shielded wire, a housing enclosing a periphery of the shielded wire a predetermined distance away from the terminal fitting such that shielded wire is exposed from the terminal fitting, the housing including a flange, a first oil entry-preventing means disposed at a space between the shielded wire and the terminal fitting for preventing oil in the shielding case from entering into the conductor, and an oil leak-preventing means disposed at a space between the housing and the shielding case for preventing the oil in the shielding case from leaking out of the shielding case. The terminal fitting and the housing are relatively movable by the shielded wire exposed at between the terminal fitting and the housing.02-02-2012
20120018624Photoelectric conversion module - A photoelectric conversion module includes a housing including a first wall and a second wall parallel to each other, a first circuit board and a second circuit board arranged between the first wall and the second wall, a spacer disposed between the first circuit board and the second circuit board, a first dust proofing member for sealing a gap between the first wall and the first circuit board and a gap between the spacer and the first circuit board, and a second dust proofing member for sealing a gap between the second wall and the second circuit board and a gap between the spacer and the second circuit board. The first circuit board includes a first holding portion for holding the first dust proofing member. The second circuit board includes a second holding portion for holding the second dust proofing member.01-26-2012
20120007077SILICON DEVICE STRUCTURE, AND SPUTTERING TARGET USED FOR FORMING THE SAME - There is provided a silicon device structure, comprising: a P-doped n01-12-2012
20120003473HALOGEN-FREE FLAME-RETARDANT RESIN COMPOSITION, WIRE AND CABLE - A halogen-free flame-retardant resin composition includes 100 parts by, weight of base polymer of polyolefin resin, not less than 50 parts by weight and not more than 250 parts by weight of metal hydroxide, not less than 1 part by weight and not more than 50 parts by weight of calcium borate, not less than 1 part by weight and not more than 50 parts by weight of zinc stannate, and less than 30 seconds of burning time after removal of flame in a vertical flame test complying with CODE 895 OR 301-05-2012
20120002420LED module, LED package, and wiring substrate and method of making same - An LED module includes an electrical insulation material including a first surface having a total reflectivity of not less than 80% with respect to light with a wavelength of 450 nm, a via hole penetrating through the electrical insulation material, a wiring pattern on a second surface of the electrical insulation material, a metal filler formed in the via hole and electrically connected to the wiring pattern, and an LED chip bonded to a surface of the metal filler on the first surface of the electrical insulation material, and sealed with a resin.01-05-2012
20120002373HEAT PIPE TYPE COOLING DEVICE AND RAILCAR CONTROL EQUIPMENT USING THE SAME - An economical heat pipe type cooling device with high performance and stable start at low environmental temperatures below 0° C., and a railcar control equipment using the invented heat pipe type cooling device are provided. The midsection between two bents formed on a heat pipe is used as an evaporator; lengths of two distal sections to be used as the condenser sections are intentionally differentiated each from the other; and the condenser section of greater length is provided with heat radiating fins more than those on the condenser section of shorter length. This configuration permits each of two condenser sections to be provided with mutually different condensing capacity and accordingly the condenser section of shorter length works to cool heat-generating elements even though the condenser section of greater length would suffer from freezing problem at low temperatures. A sufficient cooling effect is rendered at ordinary temperature.01-05-2012
20110315830CABLE FIXING MEMBER AND CABLE FIXING STRUCTURE - A cable fixing member is provided, comprising: 12-29-2011
20110306235Cable connection structure and cable connection method - A cable connection structure includes a multi-core coaxial cable connected to a board. The multi-core coaxial cable includes a plurality of parallel-arranged coaxial cables each including a center conductor and an inner insulator, an outer conductor and an outer insulator sequentially formed on an outer periphery of the center conductor. The board includes a signal electrode connected to the center conductor and a ground electrode connected to the outer conductor. The cable connection structure further includes a positioning member lying between the signal electrode and the ground electrode for positioning the center conductor while the inner insulator is attached to the positioning member.12-15-2011
20110293226COMBINED OPTICAL AND ELECTRICAL FLEXIBLE WIRING AND PRODUCTION METHOD THEREFOR - A combined optical and electrical flexible wiring includes a first film substrate, a plurality of conductors aligned parallel on a surface of the first film substrate, an optical fiber provided on the surface of the first film substrate and aligned parallel to the plural conductors, a second film substrate with which the plural conductors and the optical fiber are covered in such a manner as to include an exposed portion, a resin mount provided over the exposed portion in such a manner as to cover the plural conductors and the optical fiber, the resin mount being formed with a light inlet or outlet groove including a mirror surface therein, an optical-electrical conversion component formed on a surface of the resin mount, and a wiring pattern formed on the surface of the resin mount.12-01-2011
20110290528Insulating varnish and insulated wire formed by using the same - An insulating varnish includes a polyamide-imide resin varnish including a solvent and a polyamide-imide resin, and an organosol. The polyamide-imide resin varnish is obtained by a synthesis reaction between a resin component (X) and an isocyanate component (Y). The resin component (X) is obtained by a synthesis reaction between a diamine component and an acid component in presence of an azeotropic medium. The diamine component includes aromatic diamines including a divalent aromatic group having three or more aromatic rings. The isocyanate component (Y) includes a diisocyanate (Y1) a molecule of which includes a bend structure.12-01-2011
20110290525FLUORINE-CONTAINING ELASTOMER COVERED ELECTRIC WIRE, AND METHOD FOR MAKING SAME - A fluorine-containing elastomer covered electric wire includes a conductor, and a covering layer on a periphery of the conductor. The covering layer includes a composition including 100 parts by weight of a tetrafluoroethylene-propylene system copolymer and 0.1 to 10 parts by weight of a fatty acid amide.12-01-2011
20110284807METAL FINE PARTICLE, CONDUCTIVE METAL PASTE AND METAL FILM - A metal fine particle includes one amine compound, and one compound causing an alkylation of the amine compound. The amine compound and the alkylation causing compound cover a surface of the metal fine particle. The alkylation causing compound includes an alkyl halide compound. The alkyl halide compound includes one of iodomethane, iodoethane, 1-iodopropane, 2-iodopropane, 1-iodobutane, 1-iodo-2-methylpropane, 1-iodopentane, 1-iodo-3-methylbutane, 1-iodohexane, 1-iodoheptane, 1-iodooctane, 1-iodononane, 1-iododecane, 1-iodoundecane, 1-iodododecane, 1-iodotridecane, 1-iodotetradecane, 1-iodopentadecane, 1-iodohexadecane, 1-iodoheptadecane, 1-iodooctadecane, 1-iodononadecane, and 1-iodoeicosane.11-24-2011
20110284372Cu-Ga ALLOY MATERIAL, SPUTTERING TARGET, METHOD OF MAKING Cu-Ga ALLOY MATERIAL, Cu-In-Ga-Se ALLOY FILM, AND METHOD OF MAKING Cu-In-Ga-Se ALLOY FILM - According to one embodiment of the invention, a Cu—Ga alloy material has an average composition consisting of not less than 32% and not more than 53% by mass of gallium (Ga) as well as the balance consisting of copper (Cu) and an inevitable impurity. In the Cu—Ga alloy material, a region containing less than 47% by mass of copper accounts for 2% or less by volume of the whole Cu—Ga alloy material.11-24-2011
20110284285CABLE FIXING MEMBER AND CABLE FIXING STRUCTURE - There is provided a cable fixing member, comprising: an intermediate member crimped and tightened to a cable; a pair of bracket members for clamping and grasping one or a plurality of cables with the intermediate member tightened thereto, through the intermediate member; and one or a plurality of grooves formed on facing surfaces of the pair of bracket members by which the cable is clamped, for clamping the cable through the intermediate member, wherein an inner surface shape of the groove is formed to mesh with an outer surface shape of the intermediate member which is crimped and tightened to the cable.11-24-2011
20110254014NITRIDE SEMICONDUCTOR WAFER AND NITRIDE SEMICONDUCTOR DEVICE - There is stably provided a nitride semiconductor wafer having a nitride semiconductor layer with high insulating properties, wherein a semi-insulating nitride semiconductor layer is provided on an insulating substrate, with a resistivity of 10 MΩcm or more and 100 MΩcm or less, and a film thickness of 0.1 μm or more and 1.5 μm or less.10-20-2011
20110250801CONNECTOR - A connector includes a first terminal housing for housing a plurality of aligned first connecting terminals, a second terminal housing for housing a plurality of aligned second connecting terminals, and a connecting member for collectively fixing and electrically connecting the plurality of first connecting terminals and the plurality of second connecting terminals. The insulator includes a first insulating member that is one of two divided insulators formed by dividing the insulator, and a second insulating member that is another of the divided insulators. The two divided insulators overlap when the first terminal housing is fitted to the second terminal housing, thereby forming the insulator having a predetermined thickness. A fitting groove is formed on a facing surface of one of the first and second insulating members, and a convex portion fitting to the fitting groove is formed on a facing surface of the other.10-13-2011
20110248281Nitride semiconductor substrate, production method therefor and nitride semiconductor device - A nitride semiconductor substrate includes two principal surfaces including an upper surface that is a growth face and a lower surface on its opposite side. An FWHM in a surface layer region at depths of from 0 to 250 nm from the upper surface is narrower than an FWHM in an inner region at depths exceeding 5 μm from the upper surface, where the FWHMs are obtained by X-ray rocking curve measurement using diffraction off a particular asymmetric plane inclined relative to the upper surface.10-13-2011
20110248221METAL FINE PARTICLE FOR CONDUCTIVE METAL PASTE, CONDUCTIVE METAL PASTE AND METAL FILM - A metal fine particle for a conductive metal paste includes a protective agent covering a surface of the metal fine particle. An amount of heat generated per unit mass (g) of the metal fine particle is not less than 500 J at a temperature of an external heat source temperature in a range of 200° C. to 300° C. when being calcined by the external heat source. The protective agent includes at least one selected from the group consisting of dipropylamine, dibutylamine, triethylamine, tripropylamine, tributylamine, butanethiol, pentanethiol, hexanethiol, heptanethiol, octanethiol, nonanethiol, decanethiol, undecanethiol and dodecanethiol. The content of the protective agent is in a range of 0.1 to 20% by mass with respect to the mass of the metal fine particle.10-13-2011
20110244761Method of making conductive Group lll Nitride single crystal substrate - A method of making a conductive group III nitride single crystal substrate includes feeding to a seed crystal a group III raw material gas, a group V raw material gas, and a doping raw material gas diluted with N10-06-2011
20110240332INSULATED WIRE - There is provided an insulated wire including a wire conductor and an insulation coating formed on the wire conductor by extrusion coating a resin composition. The resin composition is a mixture of a polyphenylene sulfide-based resin (A) and a polyamide-based resin (B), in which a ratio of parts by mass of the resin (B) to that of the resin (A), i.e. (B)/(A), is not less than 5/95 and not more than 30/70.10-06-2011
20110233587LIGHT EMITTING DIODE - A light emitting diode is provided, comprising: a substrate; a metal wiring layer disposed on the substrate; alight emitting element provided on the metal wiring layer; wherein the light emitting element comprises: a semiconductor light emitting layer having a first semiconductor layer, an active layer, and a second semiconductor layer formed from the substrate side sequentially; a transparent insulating layer provided on the substrate side of the semiconductor light emitting layer; a first electrode part and a second electrode part provided on the substrate side of the transparent insulating layer in such a manner as being separated from each other, and joined to the metal wiring layer; a first contact part provided so as to pass through the transparent insulating layer and electrically connecting the first electrode part and the first semiconductor layer; and a second contact part provided so as to pass through the transparent insulating layer, the first semiconductor layer, and the active layer, and electrically connecting the second electrode part and the second semiconductor layer.09-29-2011
20110233480PRODUCING METHOD OF METAL FINE PARTICLES OR METAL OXIDE FINE PARTICLES, METAL FINE PARTICLES OR METAL OXIDE FINE PARTICLES, AND METAL-CONTAINING PASTE, AND METAL FILM OR METAL OXIDE FILM - There is provided a producing method of metal fine particles or metal oxide fine particles for producing metal fine particles or metal oxide fine particles by atomizing raw materials by performing processes including an oxidizing process and a reducing process to the raw materials composed of metal or a metal compound.09-29-2011
20110232941DIFFERENTIAL SIGNAL CABLE, AND CABLE ASSEMBLY AND MULTI-PAIR DIFFERENTIAL SIGNAL CABLE USING THE SAME - A differential signal cable for transmitting high-speed digital differential signals of several Gbit/s or more is provided to minimize characteristic impedance mismatch and to repress increase in the skew, or increase in disturbance due to differential-mode to common-mode conversion. A differential signal cable comprises two insulated wires arranged parallelly in a contact, each of said two insulated wires comprising a conductor and an insulator jacketing the conductor; a fusion layer provided on the surface of each of said two insulated wires; a drain wire placed longitudinally in a recess created in the interstice between said two insulated wires; and a shield tape lapping around said two insulated wires and said drain wire together, wherein a surface of said insulator of each of said two insulated wires is partially deformed so as to have a flat portion and said two insulated wires are fused each other at said flat portions.09-29-2011
20110199920LOW/HIGH FREQUENCY SHARED LEAKAGE ANTENNA, BASE STATION APPARATUS AND CLOSE-RANGE DETECTION SYSTEM USING THE ANTENNA - The present invention provides a high/low frequency dual wireless location detection and information transmission system which is high in reliability and maintainability, and can be easily installed.08-18-2011
20110198919Circuit Board - A circuit board, included in an inverter device that outputs AC current to a motor for driving a vehicle, includes: an insulation layer; a first conductor formed on a first side of the insulation layer, and upon which a semiconductor chip included in a lower arm of an inverter circuit is mounted; a second conductor formed on a second side of the insulation layer opposite to the first side thereof, and connected to a ground of the vehicle; and an inductor connected in parallel with a parasitic capacitance created between the first conductor and the second conductor, thus constituting a parallel resonator together with the parasitic capacitance.08-18-2011
20110198610NITRIDE SEMICONDUCTOR CRYSTAL, MANUFACTURING METHOD OF THE NITRIDE SEMICONDUCTOR FREESTANDING SUBSTRATE AND NITRIDE SEMICONDUCTOR DEVICE - To provide a nitride semiconductor crystal, comprising: laminated homogeneous nitride semiconductor layers, with a thickness of 2 mm or more, wherein the laminated homogeneous nitride semiconductor layers are constituted so that a nitride semiconductor layer with low dopant concentration and a nitride semiconductor layer with high dopant concentration are alternately laminated by two cycles or more.08-18-2011
20110198122Electric wire with terminal and method of manufacturing the same - An electric wire with a terminal including a conductor, and the terminal connected to an end portion of the conductor. The terminal includes a first connecting portion connected to an electrical equipment and a second connecting portion connected to the conductor. The second connecting portion includes a first connection surface and a second connection surface opposite to the first connection surface. The conductor includes a first conductor and a second conductor that are connected to the first connection surface and the second connection surface, respectively, by ultrasonic bonding. A total cross-sectional area of the first conductor and the second conductor is not less than 20 mm08-18-2011
20110198105NON-HALOGEN FLAME RETARDANT RESIN COMPOSITION AND ELECTRIC WIRE AND CABLE USING THE SAME - An electric wire and cable made of a non-halogen flame retardant resin composition has a modified polyolefin resin composition comprising a polyolefin resin grafted with a phosphate compound having a vinyl group, and an acid acceptor doped to the modified polyolefin resin.08-18-2011
20110195197METHOD OF MANUFACTURING ULTRAVIOLET CROSS-LINKED FOAM INSULATED WIRE - A method of manufacturing an ultraviolet cross-linked foam insulated wire includes dissolving a gas in an ultraviolet curable resin composition, subsequently applying the ultraviolet curable resin composition on a conductor, and irradiating ultraviolet light on the ultraviolet curable resin composition to form a foam insulation layer on the conductor. The irradiating of ultraviolet light allows the resin composition to cure and bubbles to grow due to a decrease in solubility of the gas in the resin composition during the curing of the resin composition.08-11-2011
20110193186RADIATION DETECTOR MODULE - A radiation detector module includes a radiation detecting substrate including a plurality of semiconductor devices mounted thereon for detecting radiation, a shielding material at a position nearer to an incident side of the radiation than the radiation detecting substrate, the shielding material being capable of shielding a portion of the radiation, and a fixing member including a bottom, a first side wall extending in a normal direction to the bottom from one end of the bottom, and a second side wall extending in the normal direction to the bottom from an other end of the bottom. The first side wall and the second side wall each include a substrate supporting portion for supporting the radiation detecting substrate, and a shielding material supporting portion at a predetermined position relative to the substrate supporting portion for supporting the shielding material.08-11-2011
20110192983RADIATION DETECTOR MODULE - A radiation detector module includes a radiation detecting substrate including a plurality of semiconductor devices mounted thereon for detecting radiation, a fixing member for holding the radiation detecting substrate, and a circuit substrate connected to the radiation detecting substrate. The radiation detecting substrate further includes a mounting board including an edge portion connected to the circuit substrate at one end thereof, and a flexible substrate including a wiring pattern connected to the plurality of semiconductor devices. The fixing member includes a bottom, a first side wall extending in a normal direction to the bottom from one end of the bottom, a second side wall extending in the normal direction to the bottom from the other end of the bottom, and substrate supporting portions on the first side wall and the second side wall.08-11-2011
20110192632INSULATED WIRE - There is provided an insulated wire having an insulation film composed of a plurality of layers provided on a conductor, in which: the insulation film includes a first film layer and a second film layer; the first film layer is made of a first resin composition formed by graft-polymerizing a graft compound with an ethylene-tetrafluoroethylene copolymer and is provided on a circumference of the conductor; and the second film layer is made of a second resin composition being a polymer alloy made of a polyphenylene sulfide resin and a polyamide resin, or being a polymer alloy made of a polyether ether ketone resin and a polyamide resin and is provided on a circumference of the first film layer.08-11-2011
20110190139METHOD OF PRODUCING Nb3Sn SUPERCONDUCTING WIRE ROD, AND Nb3Sn SUPERCONDUCTING WIRE ROD - A method of producing a Nb08-04-2011
20110189891CONNECTOR - A connector includes a metallic male terminal housing with a plurality of first joining terminals aligned and accommodated therein, a female terminal housing with a plurality of second joining terminals aligned and accommodated therein, a stacked structure that when the male terminal housing is mated into the female terminal housing, within the male terminal housing, the plural first joining terminals an the plural second joining terminals face each other to form pairs, respectively, at one surface thereof, and the first joining terminals and the second joining terminals are disposed alternately, and an electricity screening plate disposed between the stacked structure and the male terminal housing to cover a side surface of the stacked structure facing the male terminal housing.08-04-2011
20110189883CONNECTOR - A connector includes a male terminal housing with a plurality of first connecting terminals aligned and accommodated therein, a female terminal housing with a plurality of second connecting terminals aligned and accommodated therein, a plurality of isolating plates aligned and accommodated in the male terminal housing, a connecting member, and a lever mechanism including a lever to rotate a head of the connecting member so as to press the head of the connecting member against the adjacent one of the plurality of insulation plates. The lever mechanism further includes an operation permitting means that permits the connecting member to collectively fix the plurality of first connecting terminals and the plurality of second connecting terminals at the contacts, when the male terminal housing and the female terminal housing are in a predetermined fitting state.08-04-2011
20110187237PIEZOELECTRIC FILM ELEMENT, AND MANUFACTURING METHOD OF THE SAME AND PIEZOELECTRIC FILM DEVICE - A piezoelectric film element is provided, which is capable of improving piezoelectric properties, having on a substrate at least a lower electrode, a lead-free piezoelectric film, and an upper electrode, wherein at least the lower electrode out of the lower electrode and the upper electrode has a crystal structure of a cubic crystal system, a tetragonal crystal system, an orthorhombic crystal system, a hexagonal crystal system, a monoclinic crystal system, a triclinic crystal system, a trigonal crystal system, or has a composition in which one of these crystals exists or two or more of them coexist, and crystal axes of the crystal structure are preferentially oriented to a specific axis smaller than or equal to two axes of these crystals, and a ratio c/a′ is set in a range of 0.992 or more and 0.999 or less, which is the ratio of a crystal lattice spacing c in a direction of a normal line to the substrate surface, with respect to a crystal lattice spacing a′ whose inclination angle from the substrate surface is in a range of 10° or more and 30° or less.08-04-2011
20110182546PHOTOELECTRIC CONVERSION DEVICE - A photoelectric conversion device includes an optical fiber, a molded portion covering an end portion and an end face of the optical fiber, the molded portion including a transparent resin transparent to light inputted and outputted through the optical fiber and a light input/output surface perpendicular to an optical axis of the optical fiber, electric wirings oppositely formed on the light input/output surface of the molded portion so as to sandwich a light input/output portion through which the light inputted and outputted through the optical fiber passes, and an optical device mounted on the electric wirings so as to stride over the light input/output portion. The optical device includes a surface light-emitting element or a surface light-receiving element optically coupled to the optical fiber through the molded portion.07-28-2011
20110182545WAVELENGTH DOMAIN OPTICAL SWITCH - To provide a waveguide type wavelength domain optical switch which makes it possible to use a cheap lens, makes it possible to correct aberration of the demultiplexed wavelengths produced in a plurality of waveguide type demultiplexing circuits, a wavelength domain optical switch is provided with: an integrated element formed by laminating three or more waveguide type demultiplexing circuits; a first lens for collecting light emitted from the integrated element; a polarization separation element for separating light emitted from the first lens into X polarization and Y polarization and emitting the X polarization and the Y polarization at different angles; a second lens for collecting the X polarization and the Y polarization; a first reflective optical phase modulator for reflecting the collected X polarization and Y polarization at any angles; a ½-wavelength plate disposed between the second lens and the first reflective optical phase modulator in order to make polarization directions of the X polarization and the Y polarization identical; and a second reflective optical phase modulator for inputting light from the first reflective optical phase modulator into one of the waveguide type demultiplexing circuits.07-28-2011
20110175488PIEZOELECTRIC THIN FILM ELEMENT AND PIEZOELECTRIC THIN FILM DEVICE - To provide a piezoelectric thin film on a substrate, having an alkali-niobium oxide-based perovskite structure expressed by a composition formula (K07-21-2011
20110175200MANUFACTURING METHOD OF CONDUCTIVE GROUP III NITRIDE CRYSTAL, MANUFACTURING METHOD OF CONDUCTIVE GROUP III NITRIDE SUBSTRATE AND CONDUCTIVE GROUP III NITRIDE SUBSTRATE - To provide a group III nitride crystal having sufficient conductivity and capable of growing in a short time, for growing the group III nitride crystal on a base substrate by vapor deposition at a growth rate of greater than 450 μm/hour and 2 mm/hour or less, by using a group III halogenated gas and NH07-21-2011
20110174518HALOGEN-FREE FLAME-RETARDANT CABLE - A halogen-free flame-retardant cable includes a multi-core twisted wire including a plurality of insulated wires twisted together, the plurality of insulated wires each including a conductor and an insulation layer on an outer periphery of the conductor, an inner layer formed on an outer surface of the multi-core twisted wire, and an outer layer formed on the inner layer. The outer layer includes a resin composition including not less than 30 parts by mass of a flame retardant with respect to 100 parts by mass of thermoplastic polyurethane (TPU). The inner layer includes a resin composition comprising an ethylene-vinyl acetate copolymer (EVA) with a vinyl acetate (VA) content of not less than 33%, and the outer layer is subjected to cross-linking treatment.07-21-2011
20110172371METHOD OF TREATING POLYMER WITH CARBON-CARBON BOND FRAMEWORK AND PRODUCT OBTAINED BY THE TREATING METHOD - A method of treating a polymer includes oxidatively treating the polymer including a carbon-carbon bond framework in a gas atmosphere at a pressure of not less than 5.0 MPa and at a temperature of higher than 140° C. and lower than 200° C. by using oxygen included in the gas atmosphere.07-14-2011
20110168082MANUFACTURING METHOD OF GROUP III NITRIDE SEMICONDUCTOR CRYSTAL AND MANUFACTURING METHOD OF GROUP III NITRIDE SEMICONDUCTOR SUBSTRATE - A manufacturing method of a group III nitride semiconductor crystal is provided, comprising: the step of preparing a seed crystal; and the convex surface growing step of growing the group III nitride semiconductor crystal, with a growth surface of the group III nitride semiconductor crystal constituted only by a plurality of surfaces not vertical to a growth direction, and the growth surface constituted of the plurality of surfaces formed into a convex shape as a whole.07-14-2011
20110164851OPTICAL CONNECTOR AND LENS BLOCK CONNECTING STRUCTURE, AND OPTICAL MODULE - An optical connector and lens block connecting structure includes a substrate, an optical element, a lens frame including two side ribs, and a fore rib, a lens block for bending the optical path of the optical element to convert into an optical path parallel to the substrate, an optical connector provided at a fore end of an optical fiber cable, an optical connector frame including two side ribs and a rear rib, and an elastic member interposed between the rear rib of the optical connector frame and the optical connector. The optical connector frame is fixed to the substrate such that the optical connector is mounted to the lens block while the rear rib of the optical connector frame allows the elastic member to press the optical connector toward the lens block.07-07-2011
20110159731Wire harness and method of manufacturing the same - A wire harness includes a plurality of cables arranged in parallel and a connector comprising a housing to which end portions of the plurality of cables are connected. The housing has an air-tight block at a side thereof that the plurality of cables are connected. The air-tight block further includes two closing parts for closing a space between the air-tight block and the cables at two places along a longitudinal direction of the cables, and for defining a part of a cable insertion hole. A metallic member protruding outwardly in a radial direction of the cables is fixed by swaging to a periphery of each of the cables between both of two closing parts for restricting a movement of the cables along the longitudinal direction in a pulling force or pressing force of the cables.06-30-2011
20110159729Wire harness and method of manufacturing the same - A wire harness includes a plurality of cables arranged in parallel, and a connector including a housing to which end portions of the plurality of cables are connected. An air-tight block includes two closing parts, an insertion part, a press receiving part, and an air escape opening part that opens from a cable insertion hole between the closing parts toward an outside of the air-tight block. Air-tightness between the air-tight block and the cables is maintained by a first step that a melting member is vibrated and pressed to the press receiving part to have a melt resin, which is poured into a gap between the closing parts, and a periphery of the cables is covered with the melt resin, a second step that the air escape opening part is closed, and a third step that the cables are pressed by the melt resin poured into the gap.06-30-2011
20110159728Wire harness and method of manufacturing the same - A wire harness includes a plurality of cables arranged in parallel, and a connector including a housing to which end portions of the plurality of cables are connected. Air-tightness between an air-tight block and the cables is maintained by inserting a melting member into cable insertion holes through a first insertion part, vibrating the melting member and pressing the melting member against a first press receiving part formed at an inner wall surface of the cable insertion holes such that a front end portion of the melting member in contact with the first press receiving part is melted into a melt resin to allow the melt resin to be poured into a gap between the cables and the air-tight block and a periphery of the cables to be covered with the melt resin.06-30-2011
20110159717CONNECTION STRUCTURE - A connection structure includes a first terminal housing with a plurality of first connecting terminals aligned and accommodated therein, a second terminal housing with a plurality of second connecting terminals aligned and accommodated therein, a plurality of insulation members aligned and accommodated in the first terminal housing, two connecting members disposed to sandwich a stack structure of the plurality of the first connecting terminals, the plurality of the second connecting terminals and the plurality of the insulation members at a top end and a bottom end of the stack structure, and a synchronizing member to allow the two connecting members to press synchronously the adjacent insulation member.06-30-2011
20110155458Vehicle electrical conduction path - A vehicle electrical conduction path includes plural power cables, a braided shield which bundles and shields the plural power cables, a control cable, a metallic pipe which accommodates the control cable separately from the plural power cables, and a flexible resin tube which covers a periphery of the metallic pipe and the plural power cables bundled with the braided shield and arranged along the metallic pipe.06-30-2011
20110151707A CONNECTOR WITH A CONNECTING MEMBER WITH A SCREW PORTION PENETRATING THE INSULATORS AND TERMINALS OF TWO MATING TERMINAL HOUSINGS - A connector includes a first terminal housing with a plurality of first connecting terminals aligned and accommodated therein, a second terminal housing with a plurality of second connecting terminals aligned and accommodated therein, a plurality of insulation members aligned and accommodated in the first terminal housing, a connecting member including a head and a shaft connected to the head. The shaft and/or the head includes a first screw part to screw the connecting member into the first terminal housing and/or the second terminal housing. The shaft includes a second screw part to screw into an insulation member of the plurality of the insulation members at a forward end in an insertion direction of the connecting member. The second screw part includes a screw pitch greater than the first screw part.06-23-2011
20110149986SWITCHING HUB, LINE CARD AND FRAME RELAY METHOD - A switching hub includes a plurality of ports including receiving ports for receiving a frame from outside and transmitting ports for transmitting the frame to outside, a distributed ID calculation portion for calculating a distributed ID based on the frame received by one of the receiving ports of the plurality of ports and adding the distributed ID to the frame, a first distribution table that stores a port ID for identifying the transmitting port for transmitting the frame associated with the distributed ID to outside, a second distribution table that stores the port ID associated with the distributed ID so that the correspondence relation is different from that of the first distribution table, a distribution table identification information adding portion for adding first table identification information for identifying the first distribution table or second table identification information for identifying the second distribution table to the frame, and a transmission distribution table access portion for obtaining the port ID stored in the first or second distribution table so as to be associated with the distributed ID that is added to the frame by referring to the first distribution table when the first table identification information is added to the frame and by referring to the second distribution table when the second table identification information is added to the frame.06-23-2011
20110147759GROUP III NITRIDE SEMICONDUCTOR SUBSTRATE AND MANUFACTURING METHOD OF THE SAME - A Group III nitride semiconductor substrate is provided, with diameter of 25 mm or more and thickness of 250 μm or more, wherein in at least an outer edge side part of an outer edge part within 5 mm from an outer edge of the group III nitride semiconductor substrate, stress within a main surface of the group III nitride semiconductor substrate works as a tensile stress, with the tensile stress becoming relatively greater compared to that of a center side part from the outer edge side part of the group III nitride semiconductor substrate.06-23-2011
20110143111Insert molding method and insert molded product - An insert molding method includes holding a plurality of insert members in a molding die to be separated from one another, and subsequently filling a resin into the molding die to fill a gap between the insert members and a periphery thereof with the resin to form an insert molded product such that the insert members are separated at a preset interval from one another. The molding die includes a space-maintaining projection for maintaining a separation interval between the insert members at the preset interval or more, the projection being formed on an inner wall surface of the molding die opposite to a longitudinal end of the insert members, and a gate for filling the resin therethrough into the molding die, the gate being formed on an inner wall surface of the molding die opposite to a side of the insert members in a width direction thereof.06-16-2011
20110142402OPTICAL FIBER AND METHOD OF MANUFACTURING THE SAME, END PART PROCESSING METHOD OF OPTICAL FIBER AND OPTICAL FIBER WITH FERRULE - An optical fiber that permits, even when the cladding outer diameter thereof is smaller than 125 μm, an eased splicing with other optical fiber using a general-purpose ferrule, is provided. The optical fiber comprises: a first optical fiber having a first core and a first cladding having a cladding outer diameter smaller than 125 μm, wherein the first cladding has a plurality of air holes that extend longitudinally along the axis of the first core; a second optical fiber having a second core to be spliced to the first core, and a second cladding having a cladding outer diameter larger than the outer diameter of the first cladding, wherein the second cladding is to be spliced to the first cladding; and a fusion splice formed between the end of the first optical fiber and the end of the second optical fiber by fusion.06-16-2011
20110130023Connection structure for a vehicle - A connector has a first terminal housing with first connecting terminals aligned and accommodated therein, a second terminal housing with second connecting terminals aligned and accommodated therein, isolating plates and a connecting member. Each of the first connecting terminals and each of the second connecting terminals are surface-roughened such that a surface facing to other connecting terminal and composing a contact with the other connecting terminal provides a first frictional coefficient. When each of the isolating plates is adjacent to each of the first connecting terminals, each of the isolating plates is integrally fixed to each of the first connecting terminals, and when each of the isolating plates is adjacent to each of the second connecting terminals, each surface of the isolating plates facing to each of the second connecting terminals is surface-roughened to provide a second frictional coefficient.06-02-2011
20110130022CONNECTION STRUCTURE - A connection structure includes a first terminal housing with first connecting terminals, a second terminal housing with second connecting terminals, isolating plates in the first terminal housing, a connecting member to collectively fix the first connecting terminals and the second connecting terminals at the contacts therebetween for electrical connections between the first connecting terminals and the second connecting terminals. The connecting member further includes a metallic elastic member disposed between the head and the isolating plate adjacent to the head to sequentially press the isolating plates in a stacking direction. The isolating plate adjacent to the head includes a recessed portion formed in a surface to contact the elastic member for accommodating one end of the elastic member pressing the isolating plate adjacent to the head.06-02-2011
20110130021CONNECTION STRUCTURE - A connection structure includes a male terminal housing with first connecting terminals, a female terminal housing with second connecting terminals, isolating plates in the male terminal housing, a connecting member to thereby collectively fix the first connecting terminals and the second connecting terminals at the contacts therebetween for electrical connections between the first connecting terminals and the second connecting terminals, and manipulation permitting means for permitting manipulation of the connecting member for collectively fixing the first connecting terminals and the second connecting terminals at the contacts therebetween respectively, when the male terminal housing and the female terminal housing are mated with each other in a specified mated state.06-02-2011
20110127067INSULATED WIRE - An insulated wire includes a conductor, and an insulating covering layer formed on a periphery of the conductor and including two or more insulating coatings. The insulating coatings include a polyamide-imide resin insulating material represented by chemical formula 1:06-02-2011
20110121690PIEZOELECTRIC THIN FILM ELEMENT AND PIEZOELECTRIC THIN FILM DEVICE - To provide a piezoelectric thin film element comprising: a piezoelectric thin film on a substrate, having an alkali-niobium oxide-based perovskite structure expressed by a composition formula (K05-26-2011
20110121141MULTIJOINT CABLE PROTECTION AND GUIDE DEVICE - The invention provides a multijoint cable protection and guide device that steadily protects and guides cables and the like that assume flexed and straight postures. The device includes a flexible belt member in which a plurality of center tubular portions through which cables are inserted and a pair of right and left side tubular portions disposed in parallel along the center tubular portions. The center tubular portions and the pair of right and left side tubular portions are integrally molded. A pair of right and left multijoint supporting members is inserted through side tubular portions of the flexible belt member. The multijoint supporting member is composed of a large number of block bodies that are flexibly connected together by concave-convex fittings.05-26-2011
20110110637OPTICAL FIBER, END PART PROCESSING METHOD OF OPTICALFIBER, AND END PART PROCESSING APPARATUS OF OPTICAL FIBER - An optical fiber that has no bubbles in the ultraviolet ray curable resin filled inside the air holes to seal the end parts thereof, an end part processing method of the optical fiber, and an end part processing apparatus of the optical fiber, are provided. In an end part processing method of an optical fiber that is comprised of a core and a cladding formed around the core, the cladding having a refraction index lower than that of the core and has a plurality of air holes formed therein along the axis of the core, wherein the end part process of the optical fiber is to form sealed portions on the ends of the air holes by sealing them with ultraviolet ray curable resin, the method is characterized in that the sealed portion is formed by heating the end of the optical fiber.05-12-2011
20110109408Electromagnetic coupler and communication apparatus using the same - An electromagnetic coupler has a first conductor pattern and a second conductor pattern separated from the first conductor pattern that are formed in a first plane, a feeding pattern made of a conductor and being connected to a feeing system and a ground made of a conductor and being separated from the feeding pattern that are formed in a second plane, and linear conductors electrically connecting between the first conductor pattern and the feeding pattern, and between the second conductor pattern and the ground, respectively.05-12-2011
20110108944Nitride semiconductor free-standing substrate, method of manufacturing the same and nitride semiconductor device - A nitride semiconductor free-standing substrate includes a diameter of not less than 40 mm, a thickness of not less than 100 μm, a dislocation density of not more than 5×1005-12-2011
20110104943Wire harness and method of manufacturing the same - A wire harness includes a cable, a connector comprising an outer housing comprising a resin, a cable insertion hole into which an end portion of the cable is inserted, and a concave portion formed on an insertion side of the cable insertion hole, and a welding member comprising a resin to provide air-tightness between the outer housing and the cable by being welded to the outer housing by ultrasonic welding. The welding member is formed around the cable so as to surround the cable while allowing a gap portion to have a predetermined clearance from the cable, and fitted into the concave portion of the outer housing.05-05-2011
20110104929Connector - A connector includes a female connector for accommodating a cylindrical and deformable female terminal provided at an end of a cable, a male connector for accommodating a male terminal configured to be inserted into the female terminal, a fastening member provided slidably around an outer periphery of the female terminal, and configured to tighten the female terminal to fasten the male terminal when inserted into the female terminal, and a slide mechanism for sliding the fastening member, which is provided in the female connector.05-05-2011
20110101255OPTICAL TRANSCEIVER - An optical transceiver includes a transmitting side photoelectric converter, a transmitting side circuit board, a receiving side photoelectric converter, a receiving side circuit board, a surface of the transmitting side circuit board being arranged to face a surface of the receiving side circuit board, a lens block disposed between the transmitting side circuit board and the receiving side circuit board, and optically connected to a transmitting side optical fiber and a receiving side optical fiber, and a frame body holding the lens block such that the lens block aligns with the transmitting side photoelectric converter and the receiving side photoelectric converter, and to fix the transmitting side circuit board and the receiving side circuit board at a predetermined distance from each other.05-05-2011
20110088489Load measuring sensor for rod-shaped body and load measuring system - A load measuring sensor for a rod-shaped body includes a stress transfer member including portions tightly fixed to the rod-shaped body at two longitudinal positions and a non-fixed portion not fixed to the rod-shaped body, the rod-shaped body being deformable by a load, and a plurality of strain gauges each attached to the stress transfer member at a plurality of circumferential positions of the stress transfer member and at least two longitudinal positions of the stress transfer member.04-21-2011
20110079800LIGHT EMITTING ELEMENT - A light emitting element according to an embodiment of the invention includes a semiconductor substrate, a light emitting part having a first conductivity type first cladding layer; a second conductivity type second cladding layer different from the first cladding layer in the conductivity type and an active layer sandwiched between the first cladding layer and the second cladding layer, a reflecting part for reflecting a light emitted from the active layer, disposed between the semiconductor substrate and the light emitting part so as to have a thickness of 1.7 μm to 8.0 μm and an electric current dispersing layer disposed on a side of the light emitting part opposite to the reflecting part, having a uneven part on the surface thereof, wherein the reflecting part is formed so as to have at least three pair layers formed of a first semiconductor layer and a second semiconductor layer different from the first semiconductor layer, the first semiconductor layer has a thickness T04-07-2011
20110079416Hydrous water absorbent polymer-dispersed ultraviolet curable resin composition, porous substance, and insulated wire cable using the same - A hydrous water absorbent polymer-dispersed ultraviolet curable resin composition includes a hydrous water absorbent polymer preliminarily hydrated, swollen and dispersed in the resin composition, and a hydrophilic monomer. The hydrophilic monomer is added not less than 10 mass % to the resin composition.04-07-2011
20110079410Shielded cable - A shielded cable includes a core comprising an insulated wire including an inner conductor and an insulation layer formed on an outer periphery of the inner conductor, a shield layer formed on an outer periphery of the core, and a jacket layer formed on an outer periphery of the shield layer. The shield layer includes a stranded conductor shield layer including a stranded conductor spirally wound around the core, and the stranded conductor includes a plurality of conductor strands stranded together. The shield layer may further include a tinsel copper braided shield layer or a metal plated strand braided shield layer that is formed between the core and the stranded conductor shield layer.04-07-2011
20110052205Combined optical and electrical interconnection module and method for producing same - A combined optical and electrical interconnection module includes a flat cable comprising an optical transmission line and an electrical wire, and a printed circuit board including a light receiving module for receiving optical signals and/or a light sending module for sending optical signals and an optical waveguide for the optical signals to be transmitted therethrough or an optical block for bending the optical paths of the optical signals. The printed circuit board is electrically and optically connected to both ends or one end of the flat cable.03-03-2011
20110051732Switching hub and ring network - A switching hub for processing a VLAN frame transmitted through a transmission line of a ring network includes two ring ports connected to the transmission line of the ring network, and a forwarding processing mechanism for, when one of the two ring ports receives the frame and when a VLAN in which the received frame belongs is a VLAN only through both the ring ports, forwarding the frame to the other ring port without performing FDB learning on the frame.03-03-2011
20110049436COMPOSITION OF CONDUCTIVE RUBBER - A composition of conductive rubber which does not adhere each other in uncross-linked state is provided to exhibit good workability. The composition of conductive rubber including carbon as conductive additive in a base rubber to be cross-linkable by electron beam radiation includes 5 to 40% by weight of an adhesion inhibitor of uncross-linked rubber into a base rubber which is selected from ethylene ethyl acrylic acid copolymer resin (EEA), ethylene vinyl acetate copolymer resin (EVA), ethylene methyl acrylate copolymer resin (EMA), and ethylene acrylic acid copolymer resin (EAA).03-03-2011
20110048454SURFACE TREATMENT METHOD OF METAL MEMBER AND CLEANING NOZZLE - A surface treatment method of a metal member according to an embodiment of the invention includes removing an oily substance on the metal member by using gas-liquid two fluids that are obtained by boiling heated and pressured water under ordinary pressure. A surface treatment device of a metal member for removing an oily substance on the metal member includes self-generation two fluids production means for producing gas-liquid two fluids by boiling heated and pressured water under ordinary pressure, and a surface treatment room carrying out a surface treatment by bringing the self-generation two fluids into contact with the metal member.03-03-2011
20110038583Optical fiber, tape-like optical fiber and optical module using the same - An optical fiber has a single-layer coated optical fiber having an optical bare fiber including a core and a clad formed around the core, and a single coating layer provided around an outer periphery of the optical bare fiber, an inner coating layer provided around an outer periphery of the single-layer coated optical fiber, which contacts with the single coating layer, and an outer coating layer formed as a collective coating layer around an outer side of the inner coating layer. The inner coating layer has a Young modulus lower than a Young modulus of the single coating layer and a Young modulus of the outer coating layer.02-17-2011
20110035091SENSOR SYSTEM FOR MOTION CONTROL OF A MOVING UNIT AND A METHOD OF INSTALLING A SENSOR SYSTEM FOR MOTION CONTROL OF A MOVING UNIT - A sensor system for motion control of a moving unit such as a vehicle, which is comprised of a uniaxial physical value sensor having a single detection axis and the uniaxial physical value sensor being installed in a unsprung mass of a suspension device provided in the moving unit, wherein the detection axis of the uniaxial physical value sensor and the working axis of a vibration-buffering member provided on the suspension device are approximately parallel.02-10-2011
20110033159Optical fiber connecting part and optical module using the same - An optical fiber connecting part has a ferrule, and a guide bore penetrating through the ferrule and configured to guide an optical fiber to be inserted. The guide bore has a first bore provided at one end of the ferrule, through which the optical fiber is inserted into the ferrule, a second bore provided at another end of the ferrule, the second bore having an inner diameter smaller than an inner diameter of the first bore, and an intermediate bore provided between the first bore and the second bore to directly connect between the first bore and the second bore. A center axis of the second bore is shifted from a center axis of the first bore.02-10-2011
20110031385PHOTOELECTRIC CONVERSION MODULE - A photoelectric conversion module includes a transmission side photoelectric conversion part for converting an electrical signal into an optical signal, a transmission side circuit board on which the transmission side photoelectric conversion part is mounted on a top surface side of the transmission side circuit board, a reception side photoelectric conversion part for converting an optical signal into an electrical signal, a reception side circuit board on which the reception side photoelectric conversion part is mounted on a top surface side of the reception side circuit board, and a housing. The transmission side circuit board and the reception side circuit board are placed such that a back surface of the transmission side circuit board is opposite to the housing and a back surface of the reception side circuit board is opposite to the housing.02-10-2011
20110031379PHOTOELECTRIC CONVERSION MODULE - A photoelectric conversion module includes a transmission side photoelectric conversion part for converting an electrical signal into an optical signal, a transmission side circuit board on which the transmission side photoelectric conversion part is mounted off-center to one side of the transmission side circuit board at one end of the transmission side circuit board, a reception side photoelectric conversion part for converting an optical signal into an electrical signal, and a reception side circuit board on which the reception side photoelectric conversion part is mounted off-center to one side of the reception side circuit board at one end of the reception side circuit board. A surface of the transmission side circuit board on which the transmission side photoelectric conversion part is mounted is opposite to a surface of the reception side circuit board on which the reception side photoelectric conversion part is mounted.02-10-2011
20110031001COMPOSITE METAL FINE PARTICLE MATERIAL, METAL FILM AND MANUFACTURING METHOD OF THE METAL FILM, AND PRINTED WIRING BOARD AND CABLE - A composite metal fine particle material is provided, in which spherical silver nanoparticles synthesized from a silver compound, a solvent, a reducing agent, and a dispersant, and conductive fillers compose of non-spherical metal fine particles, are mixed. For example, the conductive fillers composed of the non-spherical metal fine particles are formed into slender columnar shapes, plate shapes, or ellipsoidal shapes.02-10-2011
20110024781Light emitting device - A light emitting device has a light emitting layer having a first semiconductor layer of a first conductivity type, a second semiconductor layer of a second conductivity type different from the first conductivity type, and an active layer sandwiched between the first semiconductor layer and the second semiconductor layer, a reflecting layer provided on a side of one surface of the light emitting layer, which reflects a light emitted from the active layer, a supporting substrate provided on an opposite side of the reflecting layer with respect to the light emitting layer, which supports the light emitting layer via an adhesion layer, an ohmic contact portion provided on a part of the reflecting layer, which electrically connects between the reflecting layer and the light emitting layer, and convexo-concave portions formed on other surface of the light emitting layer and side surfaces of the light emitting layer, respectively, and an insulating film configured to cover the convexo-concave portions.02-03-2011
20110024156ENAMELED INSULATED WIRE AND MANUFANTURING METHOD THEREOF - There is provided an enameled insulated wire, which includes: a metal conductor; an intermediate layer around the metal conductor, the intermediate layer containing metal oxide particles, the metal oxide particles including at least one oxide selected from a group consisting of zinc oxides, tin oxides, compound oxides of zinc and the metal constituent of the metal conductor, and compound oxides of tin and the metal constituent of the metal conductor, diameter of the metal oxide particles being predominantly from 1 to 50 nm; and an insulation coating around the intermediate layer.02-03-2011
20110024151CABLE - A cable includes a plurality of stranded wires substantially arranged annularly and each formed by twisting a plurality of conductor wires, and an inclusion disposed substantially at a center of the plurality of stranded wires. The inclusion includes spiral grooves, each of which being provided for fitting each of the stranded wires thereinto, that are each shaped according to a part of an outer surface of the stranded wires and separated by a dividing wall provided for preventing two adjacent stranded wires of the plurality of stranded wires from contacting each other.02-03-2011
20110006643PIEZOELECTRIC THIN FILM ELEMENT, AND PIEZOELECTRIC THIN FILM DEVICE - To stably provide a KNN piezoelectric thin film element having piezoelectric characteristics replaceable with a PZT thin film. A piezoelectric thin film element includes: a piezoelectric thin film on a substrate, having an alkali niobium oxide series perovskite structure expressed by a general formula (K01-13-2011
20110006397Group III nitride semiconductor free-standing substrate and method of manufacturing the same, group III nitride semiconductor device and method of manufacturing the same - A group III nitride semiconductor free-standing substrate includes an as-grown surface, more than half of a region of the as-grown surface including a single crystal plane. The single crystal plane includes an off-angle inclined in an m-axis or a-axis direction from a C-plane with a group III polarity, or in a c-axis or a-axis direction from an M-plane.01-13-2011
20100329604OPTICAL CONNECTOR - An optical connector that requires no complicated fabrication operation such as highly accurate optical axis alignment and that permits an efficient pick up of part of the communication signal light being on-propagation along an optical transmission line, is provided. The optical connector 12-30-2010
20100328920High-speed transmission circuit board connection structure - A high-speed transmission circuit board connection structure includes a first high-speed transmission circuit board including a laminated substrate including a first signal transmission wiring formed on a surface thereof and a ground plane formed inside thereof, a second high-speed transmission circuit board including a circuit substrate and a second signal transmission wiring formed on a surface of the circuit substrate, a conductive board connecting member for fixing the first and second high-speed transmission circuit boards to a surface thereof, and a bonding wire for electrically connecting the first signal transmission wiring and the second signal transmission wiring. The ground plane is exposed on a side end face of the laminated substrate, and a conductive film is formed on the side end face such that the ground plane of the first high-speed transmission circuit board is electrically connected to the board connecting member with the conductive film.12-30-2010
20100327298LIGHT-EMITTING ELEMENT AND METHOD OF MAKING THE SAME - A light-emitting element includes a semiconductor substrate, a light emitting portion including an active layer sandwiched between a first cladding layer of a first conductivity type and a second cladding layer of a second conductivity type different from the first conductivity type, a reflective portion provided between the semiconductor substrate and the light emitting portion for reflecting light emitted from the active layer, and a current spreading layer provided on the light emitting portion opposite to the reflective portion and including a concavo-convex portion on a surface thereof. The reflective portion includes a plurality of pair layers each including a first semiconductor layer and a second semiconductor layer different from the first semiconductor layer, and the first semiconductor layer has a thickness T12-30-2010
20100323214Rolled copper foil - A rolled copper foil includes copper (Cu), an inevitable impurity, a first additive element that forms a solid solution in the copper, and a second additive element that is different from the first additive element, is contained in the copper, and forms a compound with the inevitable impurity.12-23-2010
20100320874PIEZOELECTRIC THIN FILM ELEMENT, AND PIEZOELECTRIC THIN FILM DEVICE - To provide A piezoelectric thin film element, comprising a piezoelectric thin film lamination with at least a lower electrode, a piezoelectric thin film represented by a general formula (Na12-23-2010
20100320871PIEZOELECTRIC THIN FILM ELEMENT AND MANUFACTURING METHOD OF THE PIEZOELECTRIC THIN FILM ELEMENT, PIEZOELECTRIC THIN FILM DEVICE - To provide a piezoelectric thin film element capable of improving piezoelectric characteristics and realize a piezoelectric thin film device with high performance and high reliability, comprising: a substrate; and a piezoelectric thin film formed on the substrate by a sputtering method, with perovskite oxide expressed by (Na12-23-2010
20100319961INSULATED WIRE - There is provided an insulated wire equipped with an insulation film made of polymer alloy, the polymer alloy comprising an amorphous thermosetting resin and an amorphous thermoplastic resin, in which: the insulation film has a sea-island structure; the amorphous thermosetting resin is a sea component of the sea-island structure; and the amorphous thermoplastic resin is an island component of the sea-island structure.12-23-2010
20100319818Method for fabricating a copper alloy and copper alloy fabricated by the same - A method for fabricating a copper alloy. Cu and Cr, Zr, and Sn to be doped to the Cu are melt to cast a copper alloy material. Hot working is carried out on the copper alloy material to form a plate material having a rolled texture. Heat treatment is carried out on the plate material. Cold rolling with workability of 80% or more and less than 90% is carried out on the plate material after the heat treatment to form an intermediate plate material. Aging treatment is carried out on the intermediate plate material. Another cold rolling with workability of 20% to 40% is carried out as finish rolling on the intermediate plate material after the aging treatment step. The intermediate plate material after the finish rolling step is heated as stress relief annealing.12-23-2010
20100314972PIEZOELECTRIC THIN FILM ELEMENT AND PIEZOELECTRIC THIN FILM DEVICE INCLUDING THE SAME - A piezoelectric thin film element is provided, including on a substrate: a piezoelectric thin film expressed by a general formula (Na12-16-2010
20100308301Semiconductor light-emitting device - A light-emitting diode has: a substrate; a light-emitting layer having a first conductivity type cladding layer, an active layer, and a second conductivity type cladding layer stacked sequentially on a front side of the substrate; a first current-blocking portion partially formed in the middle on the light-emitting layer; a current-conducting portion formed on the second conductivity type cladding layer and the first current-blocking portion; a lower electrode formed on the back side of the substrate, a light-reflecting layer formed between the substrate and the light-emitting layer; a partial electrode formed on the surface of the light-reflecting layer and in a portion positioned below the first current-blocking portion; and a second current-blocking portion formed over the surface of the light-reflecting layer excluding the portion in which is formed the partial electrode.12-09-2010
20100301362Semiconductor light emitting element - A semiconductor light emitting element includes a group III-V compound semiconductor layer, a first main surface and a second main surface, a reflection metal film formed on the second main surface, a front surface electrode formed on the first main surface, and an ohmic contact joint part formed between the reflection metal film and the group III-V compound semiconductor layer except a region directly under the front surface electrode. The ohmic contact joint part is disposed in a side of an outer peripheral part of the semiconductor light emitting element, formed so as to surround the front surface electrode when the ohmic contact joint part is viewed from a side of the front surface electrode, and disposed so that distance from each location of outer edge parts of the front surface electrode to the ohmic contact joint part nearest to the each location becomes equal to each other.12-02-2010
20100300423Compound semiconductor substrate production method - A method of making a compound semiconductor substrate includes providing a GaN compound semiconductor single crystal ingot, and cutting the ingot with a cutter to form a GaN single crystal substrate. The cutting is performed while controlling a temperature in a contact portion between the ingot and the cutter to be not more than 160° C. such that a cut surface of the GaN single crystal substrate has an arithmetical mean waviness (Wa) not more than 9 μm.12-02-2010
20100295055NITRIDE SEMICONDUCTOR SUBSTRATE AND MANUFACTURING METHOD OF THE SAME - To improve an adhesion to a substrate holder, and improve a device production yield by uniformizing a temperature distribution in a surface of a substrate and uniformizing characteristics such as a film thickness. When a concave warpage is set to be negative on a substrate front side, and a convex warpage is set to be positive on the substrate front side, then a line segment is drawn from one end of a substrate rear surface to the other end of the substrate rear surface, passing through a substrate center line, and a substrate is sliced by this line segment in a substrate thickness direction, a maximum value of shortest values of a distance from an arbitrary point on the drawn line segment to a rear side outline in a sliced surface, is defined as warpage H in a diameter direction, and when the warpage H in the diameter direction is obtained in a substrate peripheral direction, with its maximum value set to be Hmax, and its minimum value set to be Hmin, the warpage H in the diameter direction is defined to satisfy Hmax−Hmin≦30 μm.11-25-2010
20100290748COMPOSITE CABLE - A composite cable that is able to prevent both the unfastening of the cable end from the connector and the occurrence of the bending distortion of the optical fiber, to both of which the expansion and shrinkage of the overall sheath is responsible, is provided. The composite cable comprises a stranded wire that is a strand of a plurality of insulated conductors each of which is a conductor with insulation covering thereon, an optical fiber ribbon that has a plurality of optical fibers parallelly-arranged in a row, and an overall sheath that covers the stranded wire and the optical fiber ribbon in a bundle, wherein the composite cable has a deterrent positioned on outer side of the stranded wire and the optical fiber ribbon parallelly-arranged in a row along the width direction of the overall sheath for deterring expansion and shrinkage of the overall sheath. Further, the composite cable has a bonding jacket between the deterrent and the overall sheath for making the deterrent adhere to the overall sheath; alternatively, the deterrent has a patterned indented shape on the surface thereof for making the deterrent adhere to the overall sheath.11-18-2010
20100288539PRINTED WIRING BOARD AND MANUFACTURING METHOD OF THE SAME - A printed wiring board is provided, having conductor patterns formed on a surface of an insulating substrate, wherein the conductor pattern is formed by lamination of a base metal pattern formed by patterning a base metal film which is formed on a surface of the insulating substrate, and plating a metal pattern formed on the base metal pattern by selective plating after the base metal pattern is formed.11-18-2010
20100284416Network relay device and ring network - A network relay device constituting a network includes a transmit/receive unit having plural ports; an FDB for storing as its registered contents at least a port identifier for identifying each of the plural ports, or an LAG port into which are grouped a specified number of the plural ports, a terminal identifier for identifying a terminal, and an FDB_ID for being associated with both the port identifier and the terminal identifier; and an FDB_ID table for storing the FDB_ID associated with the port identifier. When the registered contents of a specified port or LAG port stored in the FDB are erased, the stored FDB_ID associated with the port identifier identifying that port or LAG port is rewritten as another value.11-11-2010
20100282487Very thin coaxial cable end processing method and end-processed structure - A method for processing an end of a very thin coaxial cable which includes sequentially from its center to outer side a center conductor, an inner insulator, a shield conductor formed of a helically wound or a braided conducting wire, and a jacket. The method includes cutting the jacket to expose the shield conductor, cutting a circumferential portion of the exposed shield conductor in plural longitudinal portions of the very thin coaxial cable, and pulling and removing the jacket and the shield conductor between the end of the very thin coaxial cable and a farthest end-processing portion from the end of the very thin coaxial cable, to expose the inner insulator.11-11-2010
20100281985Optical fiber vibration sensor - An optical fiber vibration sensor includes a light source, an optical receiver, an optical dividing/coupling part, a signal processing unit, and a fiber loop part made of an optical fiber. A part of an optical fiber composing the fiber loop part is installed outside a housing of a main body of the optical fiber vibration sensor and another part of the optical fiber composing the fiber loop part is installed outside the housing as a vibration detecting optical fiber.11-11-2010
20100281686METHOD OF MANUFACTURING A WIRING MATERIAL - A wiring material is provided by electrically connecting a connecting terminal with two single line conductors arranged in parallel. The connecting terminal is provided with a tube-shaped section for storing two single line conductors, the two single line conductors are inserted into the tube-shaped section, resistance welding is performed by carrying electricity from the external of the tube-shaped section in a status where the tube-shaped section and the single line conductors are mutually brought into contact, and the connecting terminal is electrically connected with the two single line conductors.11-11-2010
20100278188Network relay device, network connection confirmation method, and nertwork - A network relay device is for receiving, from an external network relay device, connection confirmation information indicative of being in communication connection with the external network relay device. When the connection confirmation information is particular connection confirmation information indicative of being transmitted from a predetermined external network relay device, the network relay device provides return confirmation information to the predetermined external network relay device.11-04-2010
20100278048Network relay device, network, and network maintenance and operation method - A network relay device constituting a network includes a frame determination unit for referencing a protocol identifier contained in a frame from an external network relay device constituting another standard network different from the network, to determine whether or not the frame contains a confirmation frame for network operation, administration or maintenance, and a processing unit for performing operation, administration, or maintenance on the frame, when the frame determination unit determines that the frame is the confirmation frame.11-04-2010
20100272141NITRIDE SEMICONDUCTOR FREESTANDING SUBSTRATE AND MANUFACTURING METHOD OF THE SAME, AND LASER DIODE - There is provided a nitride semiconductor freestanding substrate, with a dislocation density set to be 4×1010-28-2010
20100270054CABLE - A cable having a cable structure comprising a stranded wire formed by stranding a plurality of stranded conductors and an inclusion that is more deformable than the stranded conductors, wherein a plurality of stranded conductors are arranged on a circumference of the inclusion.10-28-2010
20100265817Ring network and network relay device - A ring network with plural network relay devices connected in a ring shape includes first and second control ports to be transitioned into either a forwarding state that permits relaying information, or a blocking state that prohibits relaying information; and a ring protocol control unit for transmitting connection confirmation information indicative of communications being possible between the first and the second control port, from the first to the second control port, and from the second to the first control port at a predetermined time interval, or for, in the event that the first or the second control port does not receive the connection confirmation information from the second or the first control port, transmitting failure information indicative of communications being not possible between the first and the second control port, from the first to the second control port, or from the second to the first control port. The ring protocol control unit transitions the first control port into the blocking state when the first control port receives the failure information, or into the forwarding state when the first control port transmits the failure information. The ring protocol control unit transitions the second control port into the blocking state when the second control port receives the failure information, or into the forwarding state when the second control port transmits the failure information.10-21-2010
20100264415INTERCONNECTING STRUCTURE PRODUCTION METHOD, AND INTERCONNECTING STRUCTURE - An interconnecting structure production method includes providing a substrate, forming a semiconductor layer on the substrate, forming a doped semiconductor layer on the semiconductor layer, the doped semiconductor layer containing a dopant, forming an oxide layer in a surface of the doped semiconductor layer by heating the surface of the doped semiconductor layer in atmosphere of an oxidizing gas with a water molecule contained therein, forming an alloy layer on the oxide layer, and forming an interconnecting layer on the alloy layer.10-21-2010
20100263905DILUTE COPPER ALLOY MATERIAL, DILUTE COPPER ALLOY WIRE, DILUTE COPPER ALLOY TWISTED WIRE AND CABLE USING THE SAME, COAXIAL CABLE AND COMPOSITE CABLE, AND METHOD OF MANUFACTURING DILUTE COPPER ALLOY MATERIAL AND DILUTE COPPER ALLOY WIRE - A dilute copper alloy material includes, based on a total mass of the dilute copper alloy material, 2 to 12 mass ppm of sulfur, 2 to 30 mass ppm of oxygen, 4 to 55 mass ppm of titanium, and a balance consisting of pure copper and an inevitable impurity. A part of the sulfur and the titanium forms a compound or an aggregate of TiO, TiO10-21-2010
20100260881METHOD OF TREATING POLYMER COMPOUND AND TREATMENT SYSTEM FOR THE SAME - A method of treating a polymer compound has the steps of: mixing and agitating the polymer compound and a chemical agent in an extruder while controlling the inside of the extruder to be kept at a high temperature and a high pressure to have a reaction mixture containing a polymer treated product; supplying the reaction mixture continuously into a high-pressure container disposed following the extruder and retaining the reaction mixture at the high temperature and high pressure for a predetermined time; then supplying the reaction mixture continuously to a chemical agent separator to separate the polymer treated product; and supplying the separated polymer treated product continuously to a molding means to form it into a molded material.10-14-2010
20100258911NITRIDE SEMICONDUCTOR SUBSTRATE - A nitride semiconductor substrate is provided, having a concave or convex warpage on a front surface side, wherein when a rear surface side is placed on a flat surface, an average roughness of the rear surface at a part not in contact with the flat surface and at a part where a height from the flat surface to the rear surface is a prescribed value or more is set to be greater than an average roughness of the rear surface at a part where the height from the flat surface including a part in contact with the flat surface to the rear surface is less than the prescribed value.10-14-2010
20100258812GROUP-III NITRIDE SEMICONDUCTOR FREESTANDING SUBSTRATE AND MANUFACTURING METHOD OF THE SAME - To provide a group-III nitride semiconductor freestanding substrate, with carrier concentration of a peripheral part of a n-type group-III nitride semiconductor freestanding substrate set to be lower than the carrier concentration inside of the peripheral part. In this freestanding substrate, preferably value Δσ obtained by dividing a difference between a maximum value of the carrier concentration and a minimum value of the carrier concentration in a surface of the freestanding substrate by the maximum value of the carrier concentration is greater than 0.05, and the carrier concentration in any place in the surface of the freestanding substrate exceeds 5.0×1010-14-2010
20100252849Light-emitting element - A light-emitting element includes a semiconductor substrate, a light emitting layer portion including an active layer on the semiconductor substrate, a first reflective layer between the semiconductor substrate and the active layer for reflecting light emitted from the active layer; and a second reflective layer between the semiconductor substrate and the first reflective layer for reflecting light with a wavelength different from that of the light reflected by the first reflective layer. The second reflective layer reflects light with a wavelength longer than that of the light reflected by the first reflective layer.10-07-2010
20100248540Cable fixing method and cable connecting part - A cable fixing method and a cable connecting part for a connector. In the cable fixing method and the cable connecting part, a part of a cable in a longitudinal direction is inserted into a metallic cylindrical part of a metallic case; and the cable is fixed to the metallic case by crimping the metallic cylindrical part which accommodates the part of the cable in the longitudinal direction in such a manner that 0.60≦K≦0.95 is established, when a cross-sectional area of the cable before crimping the metallic cylindrical part is A, a cross-sectional area of the cable after crimping the metallic cylindrical part is B, and B/A is a crimping ratio K.09-30-2010
20100247042OPTICAL CONNECTOR AND FIBER MODULE - An optical connector that permits an optical fiber ribbon to be led out in multiple directions and an optical fiber module that uses the optical connector are provided. The optical connector 09-30-2010
20100244196Group III nitride semiconductor composite substrate, group III nitride semiconductor substrate, and group III nitride semiconductor composite substrate manufacturing method - A group III nitride semiconductor composite substrate includes a substrate composed of a conductive material having a melting point of not less than 100° C., a group III nitride layer provided on the substrate, and a group III nitride single crystal film provided on the group III nitride layer. The group III nitride layer includes an undulation including a periodic roughness in a surface of the group III nitride layer contacted with the group III nitride single crystal film. The undulation includes a 1-dimensional power spectral density of less than 500 nm09-30-2010
20100242627TORQUE-INDEX SENSOR - A torque-index sensor having index sensor and torque sensor closely arranged and integrated therein with lightened interference between them is provided. The invented torque-index sensor is comprised of torque sensor that includes first magnetic sensor arranged beside first annular-shaped magnet and index sensor that includes second magnet arranged beside annular-shaped encoder and second magnetic sensor that are arranged being in-line on common axis; and means for varying magnetic flux, which changes direction of magnetic flux that is generated from second magnet toward first magnetic sensor, positioned between first magnetic sensor in torque sensor and second magnet in index sensor.09-30-2010
20100233870Method of fabricating group III nitride semiconductor single crystal, and method of fabricating group III nitride semiconductor single crystal substrate - A method of fabricating a group III nitride semiconductor single crystal includes preparing a seed substrate which includes group III nitride semiconductor and has a crystal growth face of single index plane, and epitaxially growing the group III nitride semiconductor single crystal on the crystal growth face, wherein the group III nitride semiconductor single crystal is epitaxially grown while being surrounded by a plurality of crystal surfaces including low-index planes spontaneously formed, and the low-index planes have a structure that each of plane indices showing a crystal plane is not more than 3.09-16-2010
20100230069Method of making copper wire rod with low semi-softening temperature, method of making copper wire and copper wire - A method of making a copper wire rod with low semi-softening temperature includes melting a raw material copper to have a copper melt, adjusting concentrations of oxygen and sulfur included in the copper melt to be not more than 20 ppm and not more than 6 ppm, respectively, continuously casting the adjusted copper melt at temperature not higher than 1120° C. to have a cast bar, and hot-rolling the cast bar in a temperature range of 850° C. to 550° C.09-16-2010
20100227647Mobile communication base station antenna - A mobile communication base station antenna has a plurality of polarization diversity antenna blocks, each of the polarization diversity antenna blocks including a plurality of polarization diversity antenna elements, each of the polarization diversity antenna elements including antenna elements that are disposed to be orthogonal to each other. The polarization diversity antenna elements of one of the polarization diversity antenna blocks are interposed between the polarization diversity antenna elements of another one of the polarization diversity antenna blocks, and tilt angles in the vertical plane of the respective polarization diversity antenna blocks are different from each other.09-09-2010
20100227646Mobile communication base station antenna - A mobile communication base station antenna has a plurality of array antennas. Each of the array antennas has an antenna element pair array including a plurality of antenna element pairs arranged in a vertical plane. Each of the antenna element pairs has two antenna elements having polarization characteristics orthogonal to each other. Two feeding points are provided for feeding an electric power to the two antenna elements respectively. The array antennas are arranged in a vertical plane, and the antenna element pairs included in one of the array antennas and the antenna element pairs included in other of the array antennas are arranged alternately, at least in a part between the array antennas adjacent to each other.09-09-2010
20100225552Mobile communication base station antenna - A mobile communication base station antenna has a plurality of array antenna blocks. Each of the array antenna blocks has a plurality of antenna element pairs. Each of the antenna element pairs has a plurality of antenna elements that are disposed to be orthogonal to each other. Tilt angles in the vertical plane of the respective array antenna blocks are different from each other.09-09-2010
20100224855Light-emitting device epitaxial wafer and light-emitting device - A light-emitting device epitaxial wafer includes an n-type substrate, an n-type cladding layer stacked on the n-type substrate, a light-emitting layer including a quantum well structure stacked on the n-type cladding layer, and a p-type cladding layer stacked on the light-emitting layer. The n-type cladding layer includes an epitaxial layer doped with a mixture of 2 or more n-type dopants including Si, and is not less than 250 nm and not more than 750 nm in thickness. Alternatively, a light-emitting device epitaxial wafer includes an n-type substrate, an n-type cladding layer stacked on the n-type substrate, a light-emitting layer stacked on the n-type cladding layer, and a p-type cladding layer stacked on the light-emitting layer. The n-type cladding layer includes 2 or more n-type impurities including Si.09-09-2010
20100224406INSULATED ELECTRIC WIRE - There is provided a insulated electric wire with an electric conductor on which at least a lubricating layer is formed, in which a lubricant is added to the lubricating layer so that granular bodies, with sizes of 5 nm to 3 μm, which are formed by coagulation of the lubricant disperse on a surface of the lubricating layer.09-09-2010
20100224351HEAT EXCHANGER - A heat exchanger is provide, in which a fin member and a tube member are joined each other, wherein the fin member includes a solder wetting film layer containing copper, in at least a part of a surface of a fin substrate made of aluminum or an alloy mainly composed of aluminum, where the fin member and the tube member are joined each other, and the tube member includes a solder film layer made of solder containing tin, in at least a part of a surface of a tube substrate made of copper or an alloy mainly composed of copper, where the tube member and the fin member are joined each other, wherein the fin member and the tube member are joined each other, through a diffusion bonding of a copper component of the solder wetting film layer and a tin component of the solder film layer.09-09-2010
20100219844Foreign object detection sensor and method for manufacturing the same - A foreign objection detection sensor has a lengthy sensor part having a sensor electrode having a first sensor electrode which detects a proximity of a foreign object and a second sensor electrode which detects a contact of the foreign object, a sensor terminal part provided at one end of the sensor part, a leading wire pulled out from the sensor terminal part, the leading wire being electrically connected to the sensor electrode at the sensor terminal part to provide a proximity detecting function for detecting the proximity of the foreign object to the sensor part and a contact detecting function for detecting the contact of the foreign object to the sensor part. The sensor terminal part has a support member which supports a detection circuit unit electrically connected to the sensor electrode to carry out the proximity detecting function and the contact detecting function together with the sensor electrode. The detection circuit unit is disposed in the support member.09-02-2010
20100218981Solar cell lead, method of manufacturing the same, and solar cell using the same - A solar cell lead includes a strip plate conductive material that a surface thereof is coated with solder plating. The coated solder plating includes a concavo-convex portion on a surface thereof and a 0.2% proof stress of not more than 90 MPa by a tensile test. The coated solder plating includes a hot-dip solder plating layer formed by supplying a molten solder on the surface of the strip plate conductive material. A plating temperature is set to be not higher than a liquidus-line temperature of the used solder plus 120° C., and an oxide film on a surface of the hot-dip solder plating layer is set to be not more than 7 nm in thickness.09-02-2010
20100218972INSULATED ELECTRIC WIRE - An insulated electric wire is composed of a conductor, and a lubricating layer containing a lubricant. The lubricating layer is formed around the perimeter of the conductor. The lubricating layer is not less than 0.06 and not more than 0.12 in an absorbance ratio A09-02-2010
20100218970Cable - A cable includes an insulated electric wire, a lateral winding layer formed by spirally winding an elemental wire having conductivity on a periphery of the insulated electric wire, a reversal lateral winding layer formed by spirally winding an elemental wire having conductivity in a direction intersecting with the winding direction of the lateral winding layer, a buffer layer formed between the lateral winding layer and the reversal lateral winding layer, and a sheath formed on a periphery of the reversal lateral winding layer. Each of a winding angle θ1 of the elemental wire forming the lateral winding layer and a winding angle θ2 of the elemental wire forming the reversal lateral winding layer is an acute angle, and an absolute value of difference between the winding angle θ1 and the winding angle θ2 is not more than 20 degrees.09-02-2010
20100216356Conductor connection structure - A conductor connection structure includes a cable including a stranded conductor composed of twisted plural wire conductors, and an insulating layer formed around the perimeter of the stranded conductor, the cable being connected to a male terminal member; a female terminal including a protruding portion formed by causing the stranded conductor to protrude from the insulating layer at an end of the cable, the female terminal being formed in a cylindrical shape by widening the center of an end of the protruding portion to make the protruding portion hollow, to insert the male terminal member into the protruding portion; and a fastening member slidably provided around the perimeter of the female terminal, to tighten the female terminal when connected to the male terminal member, to fasten the male terminal member.08-26-2010
20100215325Optical transmission module and optical patch catch - An optical transmission module, includes a case including a bottom plane, a circuit substrate including a first card edge provided at one end of the circuit substrate, the circuit substrate being provided in the case to be inclined with the bottom plane of the case, an optical element mounted on the circuit substrate, and a connector member including one end part provided toward a direction opposite to the circuit substrate and another end part provided toward the circuit substrate. The first card edge is electrically connected to another end of the connector member. The one end part of the connector member includes a second card edge, the second card edge is disposed to be parallel with the bottom plane of the case.08-26-2010
20100212928Insulated wire and manufacturing method of the same - An insulated wire includes a conductor, and an insulating layer of a porous member formed on the conductor by using a water-in-oil type emulsion (W/O emulsion) including a thermosetting liquid solventless varnish as the oil and water drops of water-soluble polymer contained in the thermosetting liquid solventless varnish as the water. The insulating layer of the porous member is formed by that the water-in-oil type emulsion is coated so as to form a thin film as a coated film, the thermosetting liquid solventless varnish as the oil is polymerized and cured after the formation of the thin film, and the water drops as the water is dried and removed after the curing of the thermosetting liquid solventless varnish.08-26-2010
20100207167COMPOUND SEMICONDUCTOR DEVICE INCLUDING AIN LAYER OF CONTROLLED SKEWNESS - A semiconductor epitaxial substrate includes: a single crystal substrate; an AlN layer epitaxially grown on the single crystal substrate; and a nitride semiconductor layer epitaxially grown on the AlN layer, wherein an interface between the AlN layer and nitride semiconductor layer has a larger roughness than an interface between the single crystal substrate and AlN layer, and a skewness of the upper surface of the AlN layer is positive.08-19-2010
20100207146Light emitting element - A light emitting element includes a semiconductor laminated structure including a first semiconductor layer of first conductivity type, a second semiconductor layer of second conductivity type different from the first conductivity type, and an active layer sandwiched between the first semiconductor layer and the second semiconductor layer, a surface electrode including a center electrode disposed on one surface of the semiconductor laminated structure and a thin wire electrode extending from a periphery of the center electrode, and a contact part disposed on a part of another surface of the semiconductor laminated structure extruding a part located directly below the surface electrode, in parallel along the thin wire electrode, and including a plurality of first regions forming the shortest current pathway between the thin wire electrode and a second region allowing the plural first regions to be connected. The surface electrode has an arrangement that the shortest current pathway between the center electrode and the contact part is longer than the shortest current pathway between the thin wire electrode and the first region, and the shortest current pathway between an end part of the thin wire electrode and the contact part is not shorter than the shortest current pathway between the thin wire electrode and the first region.08-19-2010
20100207124COMPOUND SEMICONDUCTOR DEVICE INCLUDING AIN LAYER OF CONTROLLED SKEWNESS - A semiconductor epitaxial substrate includes: a single crystal substrate; an AlN layer epitaxially grown on the single crystal substrate; and a nitride semiconductor layer epitaxially grown on the AlN layer, wherein an interface between the AlN layer and nitride semiconductor layer has a larger roughness than an interface between the single crystal substrate and AlN layer, and a skewness of the upper surface of the AlN layer is positive.08-19-2010
20100206605AQUEOUS ABSORPTIVE POLYMER-CONTAINING RESIN COMPOSITION-PRODUCING METHOD, AQUEOUS ABSORPTIVE POLYMER-CONTAINING RESIN COMPOSITION, AND POROUS SUBSTANCE-PRODUCING METHOD USING SAME AND POROUS SUBSTANCE, INSULATED ELECTRIC CABLE-PRODUCING METHOD, INSULATED ELECTRIC CABLE AND COAXIAL CABLE - A method for producing an aqueous absorptive polymer-containing resin composition in which a resin composition is doped with an aqueous absorptive polymer includes causing the aqueous absorptive polymer to absorb and be swollen by water beforehand, and milling and microparticulating the water-absorbed and -swollen absorptive polymer at an ultrasonic flow pressure of not less than 50 MPa.08-19-2010
20100202592Radiation detector attaching and detaching device - A radiation detector attaching and detaching device, for a radiation detecting apparatus having a plurality of radiation detectors for detecting radiation and a radiation detector stand for respectively maintaining the radiation detectors in trenches arranged with a predetermined interval. The radiation detector attaching and detaching device has a pair of rotational jigs abutting against projections provided at both sides of each of the radiation detectors maintained in the radiation detector stand; and a pair of rotational members configured to be freely rotatable, the rotational members comprising the rotational jigs.08-12-2010
20100200780Radiation detector stand - A radiation detector stand has a first support having a plurality of first trenches to which a plurality of radiation detectors for detecting a radiation are inserted, and a second support arranged in parallel to the first support. The first trenches are arranged at a predetermined interval corresponding to an interval of arranging the radiation detectors. The second support has a plurality of second trenches to which the radiation detectors are inserted, and the second trenches are arranged at the predetermined interval.08-12-2010
20100200764Radiation detector - A radiation detector includes a semiconductor element capable of detecting a radiation, a substrate on which the semiconductor element is mounted, and a flexible substrate including a connection pattern connected to an element electrode on an opposite side to the substrate of the semiconductor element. The semiconductor element is disposed on one surface of the substrate, and the flexible substrate is disposed on the opposite side to the substrate of the semiconductor element.08-12-2010
20100200761Radiation detector - A radiation detector includes a semiconductor element capable of detecting a radiation, a substrate on which the semiconductor element is mounted, and a support member disposed adjacent to the semiconductor element for supporting the substrate. The substrate includes a first end portion on which the semiconductor element is mounted, and a second end portion opposite the first end portion for disposing the support member. The support member includes a first support and a second support, and the first support and the second support each includes a protrusion and an engagement hole for engaging with the protrusion. The protrusion of the first support engages with the engagement hole of the second support to fix the first support and the second support such that the substrate is compressed and supported by the first support and the second support.08-12-2010
20100194119LATCH STRUCTURE AND CABLE WITH CONNECTOR - A latch structure according to an embodiment includes a cage having an engagement hole, a connector attachably and detachably held in the cage, the connector comprising a connector body having an almost rectangular parallelepiped shape and an insertion part to be inserted into the cage formed on an end surface of the connector body, a latch cover rockably installed in an upper surface of the connector body, being formed of a single plate material and having a cover body for covering the upper surface of the connector body, an engagement claw to engage with the engagement hole of the cage formed at an end portion of the latch cover, a spring member for always energizing the latch cover so that the engagement claw engages with the engagement hole, a rocking member formed in both sides of the cover body of the latch cover and formed by bending the plate material downward and a rocking groove formed in both side surfaces of the connector body for rockably engaging with the rocking member, wherein the rocking member is fitted to the rocking groove and the latch cover is rockably installed in the connector body.08-05-2010
20100176997Antenna and electric device having the same - An antenna for transmitting and receiving an electric wave in plural frequency bands has a conductor, two slots formed in the conductor to be facing to each other, opened ends of the two slots being formed on opposite sides, respectively, and a feeding point formed only in either one of the two slots07-15-2010
20100170691COAXIAL CABLE - A coaxial cable includes an electric conductor, an insulating layer formed on a periphery of the electric conductor, wherein the insulating layer includes an insulating material including a fluorine-containing polymer obtained by grafting at least one compound selected from unsaturated carboxylic acids and esters of the unsaturated carboxylic acids to a tetrafluoroethylene-perfluoroalkylvinylether copolymer, a conductive layer formed on a periphery of the insulating layer, wherein the conductive layer includes a sintered product from a metallic nanoparticle paste, and an outer insulating layer formed on a periphery of the conductive layer.07-08-2010
20100156247Substrate with a piezoelectric thin film - A substrate has a first thermal expansion coefficient and a piezoelectric thin film has a second thermal expansion coefficient. The piezoelectric thin film is mainly composed of a potassium sodium niobate (K,Na)NbO06-24-2010
20100150508Optical fiber mounting waveguide device and method for fabricating same - An optical fiber mounting waveguide device includes a substrate, an optical fiber mounting groove provided on a part of the substrate for mounting an optical fiber, an under cladding layer and a core sequentially formed on the substrate, and an over cladding layer formed on the core, the over cladding layer having an end surface facing to the optical fiber mounting groove, and wherein the core and the under cladding layer are protruded toward the optical fiber mounting groove with respect to the end surface of the over cladding layer.06-17-2010
20100150197Laser diode epitaxial wafer and method for producing same - A laser diode epitaxial wafer includes an n-type GaAs substrate, an n-type cladding layer formed on the n-type GaAs substrate, an active layer formed on the n-type cladding layer, and a p-type cladding layer formed on the active layer. The n-type cladding layer, the active layer, and the p-type cladding layer include an AlGaInP-based material. The p-type cladding layer has carbon as a p-type impurity. The p-type cladding layer has a carrier concentration between 8.0×1006-17-2010
20100143707SURFACE-TREATED METAL SUBSTRATE AND MANUFACTURING METHOD OF THE SAME - A surface-treated metal substrate of the present invention comprises: an adhesive layer formed of a sputtering film directly adhered to a passivation film of a metal substrate, with this adhesive layer having an internal residual stress of a compression stress or a zero stress; and a bonding layer formed of a sputtering film mainly composed of any one of copper (Cu), a mixture state of copper and nickel (Cu—Ni), a mixture state of copper and zinc (Cu—Zn), and a mixture state of copper, nickel, and zinc (Cu—Ni—Zn), on the surface of the metal substrate having the passivation film on an outermost, in an order from a surface side of the metal substrate.06-10-2010
20100141099Piezoelectric thin film element - A piezoelectric thin film element includes a bottom electrode, a piezoelectric layer and a top electrode on a substrate. The piezoelectric layer includes as a main phase a perovskite-type oxide represented by (Na06-10-2010
20100139943COAXIAL CABLE AND MANUFACTURING METHOD OF THE SAME - A coaxial cable includes an internal insulating layer formed on an outer periphery of an electric conductor, and a conductive layer formed on an outer periphery of the internal insulating layer, wherein the conductive layer is made of a metal nanoparticle paste sintered body obtained by sintering metal nanopraticles by irradiation of light toward a metal nanoparticle paste, and an external insulating layer is formed on an outer periphery of the conductive layer.06-10-2010
20100136366Tin-coated aluminum material - A tin-coated aluminum material includes a base material including aluminum or aluminum alloy, and an anti-corrosion layer and an electrical contact layer formed on an outer layer of the base material, the electrical contact layer including tin or tin alloy. The anti-corrosion layer includes a metal selected from titanium, chromium and niobium or an alloy including the selected metal as a main component. The tin-coated aluminum material may further include a bonding layer including aluminum or aluminum alloy formed between the base material and the anti-corrosion layer. The tin-coated aluminum material may further include aluminum oxide formed at an interfacial region between the base material and the anti-corrosion layer or between the base material and the bonding layer. The aluminum oxide at the interfacial region has a peak value of not less than 0.18 and not more than 0.8 in an abundance ratio of aluminum oxide=(aluminum oxide)/(aluminum+oxygen+the main component of the anti-corrosion layer+tin) where a resolution width is 2 nm for a quantitative analysis in a depth direction in an X-ray photoelectron spectroscopy or Auger electron spectroscopy.06-03-2010
20100130074Male and female connection structure - A male and female connection structure includes a female terminal, and a male terminal to electrically connect to the female terminal by being inserted into a connection position of the female terminal and to electrically disconnect from the female terminal by being withdrawn from the connection position. The female terminal includes a dimple to electrically connect to the male terminal, a male terminal pressing spring disposed opposite the dimple for pressing the male terminal to be inserted on the dimple against the dimple, and a press switching part for switching between a non-pressed state that the male terminal pressing spring does not press the male terminal located in the female terminal and a pressed state that the male terminal pressing spring presses the male terminal located in the female terminal by changing a shape of the male terminal pressing spring. The press switching part switches the non-pressed state to the pressed state, when the male terminal is inserted into the connection position, by using an insertion force applied when the male terminal is inserted into the female terminal, and it switches the pressed state to the non-pressed state, when the male terminal is withdrawn from the connection position, by using a withdrawal force applied when the male terminal is withdrawn from the female terminal.05-27-2010
20100127949Mobile Communication base station antenna - A mobile communication base station antenna has two or more array antennas. Each of the array antennas includes a plurality of antenna element pairs arranged in array shape. Each of the antenna element pairs includes two antenna elements located to be orthogonal to each other. Polarization characteristics of the two antenna elements are orthogonal to each other. The array antennas are arranged with a predetermined distance in a vertical direction.05-27-2010
20100120284Connector - A connector includes a male connector part composed of a male terminal, a first main body to which the male terminal is attached, and a first terminal housing portion composed of a first housing opening portion in which an end of the male terminal is exhibited and a predetermined housing space in which the male terminal is housed, a female connector part composed of a female terminal into which the male terminal is inserted, the male terminal being electrically connected to the female terminal by fitting the male connector part with the female connector part, a holding means inside the female terminal for holding the male terminal in a vertical direction, and a touch protecting means inside the first terminal housing portion for protecting the male terminal housed in the predetermined housing space from being touched by a foreign body. The touch protecting means includes an insulating portion for covering a part of the male terminal including the end of the male terminal except a part contacting the holding means when the male terminal is inserted into the female terminal, and a pair of projecting portions projecting in the predetermined housing space of the first terminal housing portion and at a position opposite the part contacting the holding means when the male terminal is inserted into the female terminal such that the male terminal is sandwiched therebetween in the vertical direction.05-13-2010
20100117109Light emitting element - A light emitting element includes a semiconductor stacked structure including a first semiconductor layer of first conductivity type, a second semiconductor layer of second conductivity type different from the first conductivity type and an active layer sandwiched between the first semiconductor layer and the second semiconductor layer. The light emitting element further includes a plurality of convex portions formed on one surface of the semiconductor stacked structure, and an embedded part for transmitting a light emitted from the active layer and reducing stress generated in the plurality of convex portions, the embedded part being formed between two adjacent convex portions of the plurality of convex portions.05-13-2010
20100116541Cable - A cable has a core made of an insulated wire, a shield layer provided at an outer periphery of the core, a reinforcing layer provided at an outer periphery of the shield layer, and a sheath provided at an outer periphery of the reinforcing layer. The insulated wire has a wire conductor and an insulating layer covering an outer periphery of the wire conductor. The shield layer is formed from tinsel-coppers. Each of the tinsel-copper has a core string and a copper foil provided around the core string. The reinforcing layer is formed by braiding fibers.05-13-2010
20100103067Antenna device - An antenna device includes a dielectric substrate, an electric supply line that includes a microstrip line and is formed on the dielectric substrate, an antenna element that includes a microstrip line and is formed on the dielectric substrate, and a reflector plate disposed on the dielectric substrate at a predetermined angle of inclination. The reflector plate is allowed to move relative to the dielectric substrate while keeping the predetermined angle of inclination.04-29-2010
20100101827POLYBUTYLENE NAPHTHALATE-BASED RESIN COMPOSITION AND ELECTRIC WIRE USING THE POLYBUTYLENE NAPHTHALATE-BASED RESIN COMPOSITION - There are provided a polybutylene naphthalate-based resin composition containing polybutylene naphthalate resin, a polyester block copolymer, and magnesium hydroxide; and an electric wire using a polybutylene naphthalate-based resin composition, with an insulated coating layer formed on a conductor, by using a polybutylene naphthalate-based resin composition containing polybutylene naphthalate resin, a polyester block copolymer, and magnesium hydroxide as an insulating material.04-29-2010
20100096755Wiring structure and method for fabricating the same - A wiring structure has a silicon layer, a backing layer provided on the silicon layer, the backing layer comprising a copper alloy containing a manganese, and a copper layer provided on the backing layer, and a diffusion barrier layer having an electrical conductivity, the diffusion barrier layer being provided at a region including an interface between the silicon layer and the backing layer, in which a manganese in the diffusion barrier layer is enriched compared with the backing layer.04-22-2010
20100096728Nitride semiconductor sustrate and method of fabricating the same. - A nitride semiconductor substrate includes a front surface, a rear surface on an opposite side to the front surface, and a first edge portion including a chamfered edge on the front surface. A ratio of an average surface roughness of the front surface to an average surface roughness of the first edge portion is not more than 0.01. The substrate may include a second edge portion including a chamfered edge on the rear surface. A ratio of an average surface roughness of the rear surface to an average surface roughness of the second edge portion is not more than 0.01. The first edge portion has a visible light transmissivity not more than 0.2 times that of the front surface. The second edge portion has a visible light transmissivity not more than 0.2 times that of the rear surface.04-22-2010
20100096172Wiring structure and method for fabricating the same - A wiring structure has a silicon layer, a backing layer provided on the silicon layer, the backing layer comprising a copper alloy containing a nickel, and a copper layer provided on the backing layer, and a diffusion barrier layer having an electrical conductivity, the diffusion barrier layer being provided at a region including an interface between the silicon layer and the backing layer, in which a nickel in the diffusion barrier layer is enriched compared with the backing layer.04-22-2010
20100096159METHOD OF MANUFACTURING A FOAM-INSULATED WIRE USING A POROUS SOLID AND A FOAM-INSULATED WIRE MANUFACTURED THEREBY - A method of manufacturing a foam-insulated wire, which uses a porous solid, which is able to improve performance of a foam-insulated wire by controlling the dispersion of the void content of the insulation, and the foam-insulated wire manufactured thereby are provided. The method comprising the steps of: forming a film of coating on the conductor with a water-in-oil form emulsion (O/W-form emulsion); curing the oil layer in the film of coating of the water-in-oil form emulsion by polymerization; removing water droplets therefrom; and thereby forming an insulation layer of a porous solid on the conductor.04-22-2010
20100086265Optical connector - In an embodiment of the invention, an optical connector for optically coupling respective end faces of two optical fiber cables including an optical fiber composed of a core and a cladding includes a beat shrinkable tube, a cable insertion tube disposed in the heat shrinkable tube for inserting thereinto and butting the respective end faces of the two optical fiber cables, an uncured refractive index matching resin disposed between the beat shrinkable tube and the cable insertion tube, and a resin supply hole formed in the cable insertion tube for supplying the uncured refractive index matching resin to an inside of the cable insertion tube. In an alternative embodiment, an optical connector includes a protection sleeve, a cable insertion tube disposed in the protection sleeve for inserting thereinto and butting the respective end faces of the two optical fiber cables, an optical instantaneous adhesive material disposed between the protection sleeve and the cable insertion tube, and an adhesive material supply hole formed in the cable insertion tube for supplying the optical instantaneous adhesive material to an inside of the cable insertion tube.04-08-2010
20100086264Optical connector - In an embodiment of the invention, an optical connector for optically coupling respective end faces of two optical fiber cables including an optical fiber composed of a core and a cladding and a covering layer covering the optical fiber includes a protection sleeve, a cable insertion tube disposed in the protection sleeve for inserting thereinto and butting the respective end faces of the two optical fiber cables, an uncured refractive index matching material disposed between the protection sleeve and the cable insertion tube, and a supply hole formed in the cable insertion tube for supplying the uncured refractive index matching material to an inside of the cable insertion tube. The cable insertion tube includes a cable receiving room for receiving an end of the two optical fiber cables inserted, a fiber receiving room for receiving the optical fiber, and a covering removal member formed at a boundary of the cable receiving room and the fiber receiving room for removing the covering layer.04-08-2010
20100084745Nitride semiconductor substrate - A nitride semiconductor substrate has a first surface forming a principal surface of the substrate. A first edge is formed by beveling at least a portion of an edge of the first surface of the substrate. A scattering region is formed in at least a portion of the first edge. The scattering region scatters more external incident light than the first surface.04-08-2010
20100078659Light-emitting element - A light-emitting element includes a semiconductor laminated structure including a first semiconductor layer of a first conductivity type, a second semiconductor layer of a second conductivity type different from the first conductivity type and an active layer sandwiched by the first and second semiconductor layers, a first electrode on one surface side of the semiconductor laminated structure, a conductive reflective layer on an other surface side of the semiconductor laminated structure for reflecting light emitted from the active layer, a contact portion partially formed between the semiconductor laminated structure and the conductive reflective layer and being in ohmic contact with the semiconductor laminated structure, and a second electrode on a part of a surface of the conductive reflective layer on the semiconductor laminated structure without contacting the semiconductor laminated structure for feeding current to the contact portion.04-01-2010
20100067900Optical waveguide-type wavelength domain switch - An optical waveguide-type wavelength domain switch includes a waveguide-type multi/demultiplexing device laminate comprising three or more laminated waveguide-type multi/demultiplexing devices, a lens system positioned on a demultiplex side of the waveguide-type multi/demultiplexing device laminate, and a reflective optical phase-modulating cell positioned on an opposite side of the waveguide-type multi/demultiplexing device laminate to the lens system. The lens system includes a lens alignment composed of plural lenses in one-to-one correspondence with the waveguide-type multi/demultiplexing devices and having a light-collecting or collimating function in the lens-aligning direction, an image-magnifying optical system having an N:1 (N>1) image-magnifying function arranged on the optical phase-modulating cell side of the lens alignment, an f-f lens (Y) arranged on the optical phase-modulating cell side of the image-magnifying optical system, and having a light-collecting or collimating function in the same direction as the lens-aligning direction of the lens alignment, and an f-f lens (X) having a light-collecting or collimating function in a perpendicular direction to the lens-aligning direction of the lens alignment.03-18-2010

Patent applications by HITACHI CABLE, LTD.