HERMES-EPITEK CORP. Patent applications |
Patent application number | Title | Published |
20160136782 | WORKPIECE PROCESSING APPARATUS AND METHOD - The present invention is related to a workpiece processing apparatus and method for processing a warping workpiece. The workpiece processing apparatus comprises a base, a carrier and an adjusting device. The carrier comprises a loading surface and a plurality of suction units, wherein each of the plurality of suction units is disposed inside the carrier. The adjusting device comprises an adjusting surface, and at least one adjusting portion is protruded from the adjusting surface. A first surface of the workpiece partially contacts to the loading surface of the carrier. At least one of the adjusting device and the carrier is movably connected to the base. By generating a relative movement between the adjusting device and the carrier, the first surface contacts the loading surface in a more even condition so as to make the workpiece become an adjusted workpiece. | 05-19-2016 |
20140091827 | PROBE CARD FOR CIRCUIT-TESTING - A probe card for circuit-testing comprising a testing PCB, a probe head, and a silicon interposer substrate is provided. The probe head has a plurality of probes provided with a fine pitch arrangement and held inside. The silicon interposer substrate is used for conveying signals between said probes and said test PCB. The interconnection of said silicon interposer substrate is formed by utilizing the through-silicon via process. A plurality of upper terminals and a plurality of lower terminals are respectively array-arranged on the top surface and the bottom surface of said silicon interposer substrate. The pitch between the upper terminals is larger than the pitch between the lower terminals and the pitch between adjacent lower terminals is equal to the fine pitch of the arrangement of probes. | 04-03-2014 |
20120231569 | OPTOELECTRONIC COMPONENT WITH THREE-DIMENSION QUANTUM WELL STRUCTURE AND METHOD FOR PRODUCING THE SAME - An optoelectronic component with three-dimension quantum well structure and a method for producing the same are provided, wherein the optoelectronic component comprises a substrate, a first semiconductor layer, a transition layer, and a quantum well structure. The first semiconductor layer is disposed on the substrate. The transition layer is grown on the first semiconductor layer, contains a first nitride compound semiconductor material, and has at least a texture, wherein the texture has at least a first protrusion with at least an inclined facet, at least a first trench with at least an inclined facet and at least a shoulder facet connected between the inclined facets. The quantum well structure is grown on the texture and shaped by the protrusion, the trench and the shoulder facet. | 09-13-2012 |
20110186810 | OPTOELECTRONIC COMPONENT WITH THREE-DIMENSION QUANTUM WELL STRUCTURE AND METHOD FOR PRODUCING THE SAME - An optoelectronic component with three-dimension quantum well structure and a method for producing the same are provided, wherein the optoelectronic component comprises a substrate, a first semiconductor layer, a transition layer, and a quantum well structure. The first semiconductor layer is disposed on the substrate. The transition layer is grown on the first semiconductor layer, contains a first nitride compound semiconductor material, and has at least a texture, wherein the texture has at least a first protrusion with at least an inclined facet, at least a first trench with at least an inclined facet and at least a shoulder facet connected between the inclined facets. The quantum well structure is grown on the texture and shaped by the protrusion, the trench and the shoulder facet. | 08-04-2011 |