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GRAND TECH CO., LTD
| GRAND TECH CO., LTD Patent applications | ||
| Patent application number | Title | Published |
|---|---|---|
| 20090275190 | METHOD FOR FORMING BUFFER LAYER FOR GaN SINGLE CRYSTAL - Disclosed is a method for forming a buffer layer for growing gallium nitride single crystals on a sapphire substrate using hydride vapor phase epitaxy (HVPE), wherein the buffer layer is formed in the form of a doped vertical gallium nitride (GaN) single crystal film with a nanoporosity of 0.10 to 0.15 μm on the sapphire substrate by reacting HCl and NH | 11-05-2009 |