| 20110038214 | GATE-SEPARATED TYPE FLASH MEMORY WITH SHARED WORD LINE - A gate-separated type flash memory with a shared word line includes: a semiconductor substrate, on which a source electrode area and a drain electrode area are separately arranged; a word line, which is arranged between the source electrode area and the drain electrode area; a first storage bit unit, which is arranged between the word line and the source electrode area, and a second storage bit unit, which is arranged between the word line and the drain electrode area. The two storage bit units and word line are separated by a tunneling oxide layer. The two storage bit units respectively have a first control gate, a first floating gate and a second control gate, a second floating gate, and the two control gates are separately respectively arranged on two floating gates. | 02-17-2011 |
