Genesis Photonics Inc. Patent applications |
Patent application number | Title | Published |
20150179874 | LIGHT EMITTING DIODE STRUCTURE - A light emitting diode (LED) structure includes a substrate, a N-type semiconductor layer, a light emitting layer and a P-type semiconductor layer. The N-type semiconductor layer is disposed on the substrate. The light emitting layer is adapted to emit a light with dominant wavelength between 365 nm and 490 nm and disposed on the N-type semiconductor layer. The P-type semiconductor layer is disposed on the blue light emitting layer and includes a P—AlGaN layer. A thickness of the P—AlGaN layer is more than 85% a thickness of the P-type semiconductor layer. | 06-25-2015 |
20150021639 | LIGHT EMITTING DIODE STRUCTURE - A light emitting diode structure including a substrate, a semiconductor epitaxial layer and a reflective conductive structure layer is provided. The semiconductor epitaxial layer is disposed on the substrate and exposes a portion of the substrate. The reflective conductive structure layer covers a part of the semiconductor epitaxial layer and the portion of the substrate exposed by the semiconductor epitaxial layer. | 01-22-2015 |
20140355238 | LIGHT-EMITTING DEVICE - A light-emitting device includes a light-emitting component. The light-emitting component includes a circuit board, a light-emitting diode which is mounted on and electrically connected to the circuit board, a wavelength-converting shell which covers the light-emitting diode, and a heat conductive layer which is formed on the wavelength-converting shell and which includes graphene. | 12-04-2014 |
20140346543 | LIGHT-EMITTING DEVICE - A light-emitting device of the invention includes a base, at least one light-emitting element, a wavelength transferring cover and a heat-conducting structure. The light-emitting element is disposed on the base and electrically connected to the base. The wavelength transferring cover is disposed on the base and covers the light-emitting element. The heat-conducting structure is disposed on the base and directly contacts the wavelength transferring cover. | 11-27-2014 |
20140339576 | FLIP-CHIP LIGHT-EMITTING DIODE UNIT - A flip-chip light-emitting diode (LED) unit includes a substrate, an electrode pad set disposed on the substrate, and three flip-chip LEDs disposed on the electrode pad set in a flip-chip manner and including one first LED and two second LEDs that are spaced apart from the first LED and that are electrically coupled to the first LED in a series configuration. | 11-20-2014 |
20140319562 | LIGHT-EMITTING DIODE PACKAGE STRUCTURE - An LED package structure of the invention includes a light-emitting device and a transparent molding compound. The light-emitting device has an upper surface. The transparent molding compound is disposed on the light-emitting device and covers the upper surface, in which the transparent molding compound has a top surface and a bottom surface opposite to each other and a first outside surface connecting the top surface and the bottom surface. A surface area of the first outside surface is greater than or equal to four times of a horizontal projection area of the upper surface. | 10-30-2014 |
20140313745 | ILLUMINATION DEVICE - An illumination device including at least one light emitting element and a transparent lampshade is provided. The transparent lampshade is disposed on one side of the light emitting element and located on a light emitting path of the light emitting element. The transparent lampshade has a sealed space, a first fluid and a second fluid. The first fluid is a colloidal solution, and the first fluid is immiscible with the second fluid, and the first fluid and the second fluid flow in the sealed space to change a light shape of the emitted light from the light emitting element. | 10-23-2014 |
20140313407 | PROTECTIVE COVER - A protective cover is detachably assembled to and electrically connected to an electronic device having an image capturing unit and a lens. The protective cover includes a base portion, at least one bending portion, and a plurality of light-emitting units. The electronic device is disposed on the base portion. The bending portion is foldably connected to at least one side of the base portion. There is at least one included angle between a side of the electronic device and the bending portion. The light-emitting units are disposed on the bending portion, and the light-emitting units are not coplanar with the lens. | 10-23-2014 |
20140307442 | LIGHT EMITTING DEVICE - A light emitting device includes a light emitting diode (LED) module and a rotatable wavelength converting structure. The LED module includes a substrate and a plurality of LED chips. The LED chips are disposed on the substrate, and each of the LED chips has a light emitting surface. The rotatable wavelength converting structure is disposed on the LED module and has a plurality of wavelength converting blocks with at least two different colors. Each of the LED chips at least corresponds to one wavelength converting block. The wavelength converting blocks are disposed on the light emitting surfaces of the LED chips. The rotatable wavelength converting structure rotates relative to the LED module so as to change the wavelength converting blocks that the LED chips correspond to. | 10-16-2014 |
20140307429 | LIGHT EMITTING DEVICE - A light emitting device includes a base, a light guiding lamp cover, a light-emitting diode (LED) module and a wavelength converting structure. The light guiding lamp cover is disposed on the base and an accommodating space is defined by the light guiding lamp cover and the base together. The light guiding lamp cover has an inner surface, an outer surface and a bottom surface connecting the inner surface and the outer surface. A curvature of the inner surface is greater than a curvature of the outer surface. The LED module is disposed on the base and located inside the accommodating space. The wavelength converting structure is disposed on the LED module and located inside the accommodating space. | 10-16-2014 |
20140306246 | LIGHT SOURCE MODULE - A light source module including a substrate, a plurality of first light emitting diode (LED) chips, and at least one second LED chip is provided. The substrate has an upper surface. The plurality of first LED chips are disposed on the upper surface and electrically connected to the substrate. The second LED chip is disposed on the upper surface and electrically connected to the substrate. A first distance is between a top surface of each of the first LED chips away from the upper surface of the substrate and the upper surface, a second distance is between a top surface of the second LED chip away from the upper surface of the substrate and the upper surface, and the second distance is greater than each of the first distances. | 10-16-2014 |
20140291613 | MULTIPLE QUANTUM WELL STRUCTURE - A multiple quantum well structure including a plurality of well-barrier pairs arranged along a direction is provided. Each of the well-barrier pairs includes a barrier layer and a well layer adjacent to the barrier layer. The barrier layers and the well layers of the well-barrier pairs are disposed alternately. A ratio of a thickness of the well layer in the direction to a thickness of the barrier layer in the direction in each well-barrier pair is a well-barrier thickness ratio, and the well-barrier thickness ratios of a part of the well-barrier pairs gradually increase along the direction. | 10-02-2014 |
20140278330 | ILLUMINATION SYSTEM - An illumination system is provided, including a light emitting device and a control device, wherein the control device is coupled to the light emitting device so as to capture a situation data in a remote end and generate a situation signal correspondingly. The light emitting device receives the situation signal and generates a simulating situation. | 09-18-2014 |
20140268637 | WAVELENGTH CONVERTING STRUCTURE AND MANUFACTURING METHOD THEREOF - A wavelength converting structure suitable for covering a carrier carrying at least one light-emitting diode (LED) chip is provided. The wavelength converting structure includes a base film and a fluorescent layer. The base film has a first bending portion and a first flat portion connected to the first bending portion. The first flat portion is disposed on the carrier, and an accommodating space is defined by the first bending portion and the carrier. The LED chip is disposed in the accommodating space. The fluorescent layer is disposed on the base film and has a second bending portion and a second flat portion connected to the second bending portion. The second bending portion is conformal to the first bending portion, and the second flat portion is conformal to the first flat portion. | 09-18-2014 |
20140264389 | LIGHT EMITTING DIODE STRUCTURE AND MANUFACTURING METHOD THEREOF - A light emitting diode (LED) structure including a substrate, a polymer layer, and an epitaxy layer is provided. The polymer layer is disposed on the substrate, wherein the polymer layer has a chemical formula of: | 09-18-2014 |
20140252400 | LIGHT EMITTING DEVICE - A light emitting device including a carrier, a substrate, at least one electrode pair, at least one light emitting diode (LED) and at least one positioning element is provided. The substrate is disposed on the carrier and has a body portion and at least one bending portion. The bending portion connects to the body portion. The bending portion is not coplanar with the body portion. The electrode pair is located on the body portion of the substrate. The LED is disposed on the body portion of the substrate and electrically connected to the electrode pair. The positioning element is disposed on the bending portion of the substrate for fixing the substrate on the carrier. | 09-11-2014 |
20140252118 | SPRAY COATING APPARATUS - A spray coating apparatus including a containing tank, a spray nozzle, and a detection unit is provided. The containing tank contains a glue. The spray nozzle is connected to the containing tank to spray and coat the glue on a work piece. The detection unit detects specification data of the glue on the work piece. | 09-11-2014 |
20140198506 | LIGHTING DEVICE - A lighting device includes a light base, a light shade, a padding element, at least one light emitting element and a wavelength converting shell. The light shade is disposed on the light base and cooperating with the light base to define an accommodating space. The padding element is disposed on the light base and located in the accommodating space. The light emitting element is disposed on the padding element and emits a light beam. The wavelength converting shell is disposed on the padding element and covers the light emitting element. The light beam is emitted out from the wavelength converting shall by a first refraction, formed a luminous virtual image between a first top end of the light shade and a second top end of the wavelength converting shell by reflecting, and emitted out the light shade by a second refraction. | 07-17-2014 |
20140185270 | LIGHTING STRUCTURE AND ILLUMINATING DEVICE - A lighting structure includes a substrate, a light emitting diode, a cover unit, and a hollow column. The substrate has a top surface and a rear surface opposite to the top surface. The light emitting diode is disposed on the top surface and is electrically connected to the substrate. The cover unit is disposed on and cooperates with the substrate to define a receiving space in which the light emitting diode is disposed. The hollow column is connected to the rear surface of the substrate and extends in a vertical direction away from the rear surface. The cover unit and the hollow column respectively have a height in the vertical direction, and the height of the hollow column is 2 times to 10 times the height of the cover unit. | 07-03-2014 |
20140170936 | WORKING MACHINE - A working machine includes a work piece, at least one signal generator and a detector. The signal generator is disposed beside the work piece for transmitting a signal. The detector is disposed beside the work piece so as to detect the signal transmitted by the signal generator and get a location information of the work piece. | 06-19-2014 |
20140167080 | LIGHT EMITTING DEVICE - A light emitting device includes a substrate, light emitting units, an insulation layer, a current distribution layer and a reflective layer. The substrate has an upper surface. The light emitting units are disposed on the upper surface and include at least one first light emitting diode (LED) and at least one second LED. A first side wall of the first LED is adjacent to a second side wall of the second LED so as to define a concave portion exposing a portion of the upper surface. The insulation layer at least covers the first side wall and the second side wall. The current distribution layer covers the concave portion and at least covers a portion of the second LED. The reflective layer covers the current distribution layer and is electrically connected to the first LED and the second LED. | 06-19-2014 |
20140167077 | LIGHT SOURCE MODULE - A light source module includes a substrate, at least two light emitting diode (LED) chips and at least one dummy chip. The LED chips are disposed on the substrate. The dummy chip is disposed on the substrate and located between the LED chips. The LED chips, the dummy chip and the substrate are electrically connected to one another. The dummy chip is used to redirect a lateral light emitted from the LED chips. | 06-19-2014 |
20140166716 | SPLITTING APPARATUS - A splitting apparatus suitable to split a work piece along at least one cutting line formed on the work piece is provided. The splitting apparatus includes a chopper, a detector, a controller and an adjustor. The chopper is disposed above the work piece. The detector is disposed above the work piece for transmitting a signal to the work piece so as to get a specification data of the work piece. The controller connects the detector and receives the specification data and generates an adjustment data. The adjustor connects the controller and the chopper. The adjustor receives the adjustment data and adjusts a parameter data of the chopper according to the adjustment data so that the chopper splits the work piece for once along the cutting line formed on the work piece. | 06-19-2014 |
20140159733 | DETECTION APPARATUS FOR LIGHT-EMITTING DIODE CHIP - A detection apparatus for light-emitting diode chip comprising a light-collecting apparatus having an opening, a bracing component and a probing device is disclosed. The bracing component is designed to bear at least one light-emitting diode chip. The probing device comprises a power supply and at least two flexible current-transporting elements. The two ends of the current-transporting elements are respectively electrically connected to the light-emitting diode chip and the power supply to enable the light-emitting diode chip to emit light beams. Besides, the detection apparatus for light-emitting diode chip of the present invention further comprises a thimble to push the light-emitting diode chip into the inside of the light-collecting apparatus via the opening such that the light beams emitted by the light-emitting diode chip are collected by the light-collecting apparatus. | 06-12-2014 |
20140159732 | DETECTION APPARATUS FOR LIGHT-EMITTING DIODE CHIP - A detection apparatus for light-emitting diode chip comprising a substrate with the function of photoelectric conversion and a probing device is disclosed. The substrate is designed to bear at least one light-emitting diode chip. The probing device comprises a power supply and at least two conductive elements. The two ends of the conductive elements are respectively electrically connected to the light-emitting diode chip and the power supply to enable the light-emitting diode chip to emit light beams. Some of the light beams are emitted from the light-emitting diode chip toward the substrate such that the light beams emitted by the light-emitting diode chip are converted into an electric signal by the substrate. | 06-12-2014 |
20140159082 | LIGHT-EMITTING DEVICE - A light-emitting device including a substrate, a photoelectric structure and a coarse structure is provided. The substrate has an upper surface and a lower surface opposite to each other, and an annular side surface connecting the upper surface and the lower surface. The photoelectric structure is disposed on the upper surface of the substrate. The coarse structure is formed on the annular side surface of the substrate. A ratio of a thickness of the substrate and a thickness of the coarse structure is greater than or equal to 1 and less than or equal to 20. Therefore, the overall light-emitting efficiency of the light-emitting device may be improved. | 06-12-2014 |
20140158984 | SEMICONDUCTOR STRUCTURE - A semiconductor structure includes a silicon substrate, an aluminum nitride layer and a plurality of grading stress buffer layers. The aluminum nitride layer is disposed on the silicon substrate. The grading stress buffer layers are disposed on the aluminum nitride layer. Each grading stress buffer layer includes a grading layer and a transition layer stacked up sequentially. A chemical formula of the grading layer is Al | 06-12-2014 |
20140138619 | NITRIDE SEMICONDUCTOR STRUCTURE AND SEMICONDUCTOR LIGHT EMITTING DEVICE INCLUDING THE SAME - A nitride semiconductor structure and a semiconductor light emitting device are revealed. The semiconductor light emitting device includes a substrate disposed with a first type doped semiconductor layer and a second type doped semiconductor layer. A light emitting layer is disposed between the first type doped semiconductor layer and the second type doped semiconductor layer. The second type doped semiconductor layer is doped with a second type dopant at a concentration larger than | 05-22-2014 |
20140138618 | NITRIDE SEMICONDUCTOR STRUCTURE AND SEMICONDUCTOR LIGHT EMITTING DEVICE INCLUDING THE SAME - A nitride semiconductor structure and a semiconductor light emitting device including the same are revealed. The nitride semiconductor structure includes a light emitting layer disposed between a n-type semiconductor layer and a p-type semiconductor layer, and a hole supply layer disposed between the light emitting layer and the p-type semiconductor layer. The hole supply layer is made from material In | 05-22-2014 |
20140138616 | NITRIDE SEMICONDUCTOR STRUCTURE AND SEMICONDUCTOR LIGHT EMITTING DEVICE INCLUDING THE SAME - A nitride semiconductor structure and a semiconductor light emitting device including the same are revealed. The nitride semiconductor structure mainly includes a stress control layer disposed between a light emitting layer and a p-type carrier blocking layer. The p-type carrier blocking layer is made from Al | 05-22-2014 |
20140131751 | WAVELENGTH CONVERTING SUBSTANCE, WAVELENGTH CONVERTING GEL AND LIGHT EMITTING DEVICE - A wavelength converting substance is made of semiconductor material. The wavelength converting substance is suitable for absorbing an exciting light with the wavelength range falling between 300 nanometers and 490 nanometers and converting the exciting light to an emitted light with wavelength range falling between 450 nanometers and 750 nanometers. | 05-15-2014 |
20140103367 | METHOD OF FORMING LIGHT EMITTING DIODE DIES, LIGHT EMITTING DIODE WAFER AND LIGHT EMITTING DIODE DIE - A method of forming light emitting diode dies includes: forming an epitaxial layered structure that defines light emitting units on a front surface of a substrate wafer; forming a photoresist layer over a back surface of the substrate wafer; aligning the substrate wafer and patterning the photoresist layer so as to form openings in the photoresist layer, each of the openings having an area less than a projected area of the respective light emitting unit; forming a solder layer on the photoresist layer such that the solder layer fills the openings in the photoresist layer; removing the photoresist layer and a portion of the solder layer that covers the photoresist layer from the substrate wafer; and dicing the substrate wafer. | 04-17-2014 |
20140084931 | DETECTION APPARATUS FOR LIGHT-EMITTING DIODE CHIPS - A detection apparatus for light-emitting diode chips comprises a transparent chuck with the light-concentration capability, a probing device and a light-sensing device. The transparent chuck comprises a light-incident plane and a light-emitting plane. The light-incident plane is used to bear a plurality of light-emitting diode chips under detection. The probing device comprises two probe pins and a power supply. The two ends of each probe pin is electrically connected to one of the light-emitting diode chips and the power supply, respectively, to make the light-emitting diode chip emit a plurality of light beams. The light beams penetrate through the transparent chuck by emitting into the incident plane of the transparent chuck. The light-sensing device is disposed on one side of the light-emitting plane of the transparent chuck to receive the light beams which penetrate through the transparent chuck. | 03-27-2014 |
20140084191 | DETECTION APPARATUS - A detection apparatus comprising a chuck, a probe device, a light-sensing device and a light-concentrating unit is disclosed. The chuck bears light-emitting diode chips. The probe device includes two probes and a power supply. The end point of the probes respectively electrically connects with one of the light-emitting diode chips and the power supply to make the light-emitting diode chip emits a plurality of light beams. The light-sensing device is disposed on one side of a light-emitting surface of the light-emitting diode chip so as to receive the light beams emitted by the light-emitting diode chip. The light-concentrating unit is disposed between the light-emitting diode chip and the light-sensing device to concentrate the light beams emitted by the light-emitting diode chip. | 03-27-2014 |
20140043845 | LIGHT-EMITTING APPARATUS - A light-emitting apparatus including a light guide unit, at least one light-emitting component, and a wavelength conversion unit is provided. The light guide unit has a first end and a second end opposite to the first end. The light-emitting component is disposed on the first end and emits a first light. The wavelength conversion unit is disposed on the second end. The light guide unit guides the first light emitted by the light-emitting component from the first end to the second end, and the wavelength conversion unit converts the first light into the second light, wherein the wavelength of the first light is different from the wavelength of the second light. | 02-13-2014 |
20130285083 | LIGHT EMITTING MODULE - A light emitting module including a substrate, a plurality of first light emitting diode (LED) chips and a plurality of second LED chips is provided. The substrate has a cross-shaped central region and a peripheral region surrounding the cross-shaped central region. The first LED chips are disposed on the substrate and at least located in the cross-shaped central region. The second LED chips are disposed on the substrate and at least located in the peripheral region. A size of each second LED chip is smaller than a size of each first LED chip. The number of the first LED chips located in the peripheral region is smaller than that in the cross-shaped central region. The number of the second LED chips located in the cross-shaped central region is smaller than that in the peripheral region. | 10-31-2013 |
20130277699 | PATTERN SUBSTRATE STRUCTURE FOR LIGHT EMITTING ANGLE CONVERGENCE AND LIGHT EMITTING DIODE DEVICE USING THE SAME - The present invention provides a pattern substrate structure for light emitting angle convergence and a light emitting diode device using the same. The pattern substrate structure has a plurality of enclosed geometric regions defined by at least three stripe-shaped parts on a substrate to provide the light reflection effect through the uneven surface of the substrate and thereby converge the light emitting angle of the light emitting diode element into 100˜110 degrees. Therefore, the illuminant efficiency of the light emitting diode device using the pattern substrate structure is substantially raised because of the improved directivity. | 10-24-2013 |
20130277697 | LIGHT EMITTING DIODE DEVICE - A light emitting diode device includes an epitaxial substrate, at least one passivation structure, at least one void, a semiconductor layer, a first type doping semiconductor layer, a light-emitting layer and a second type doping semiconductor layer. The passivation structure is disposed on the epitaxial substrate and has an outer surface. The void is located at the passivation structure and at least covering 50% of the outer surface of the passivation structure. The semiconductor layer is disposed on the epitaxial substrate and encapsulating the passivation structure and the void. The first type doping semiconductor layer is disposed on the semiconductor layer. The light-emitting layer is disposed on the first type doping semiconductor layer. The second type doping semiconductor layer is disposed on the light emitting layer. | 10-24-2013 |
20130277641 | SEMICONDUCTOR LIGHT EMITTING DEVICE AND FLIP CHIP PACKAGE DEVICE - A semiconductor light emitting device including a first type doped semiconductor layer, a light emitting layer, a second type doped semiconductor layer, and a reflection layer is provided. The first type doped semiconductor layer has a mesa portion and a depression portion. The light emitting layer is disposed on the mesa portion and has a first surface, a second surface and a first side surface connecting the first surface with the second surface. The second type doped semiconductor layer is disposed on the light emitting layer and has a third surface, a fourth surface and a second side surface connecting the third surface with the fourth surface. Observing from a viewing direction parallel to the light emitting layer, the reflection layer covers at least part of the first side surface and at least part of the second side surface. A flip chip package device is also provided. | 10-24-2013 |
20130277093 | SUBSTRATE STRUCTURE - A substrate structure for carrying plural heat generating elements is provided. The substrate structure includes a board, a patterned metal layer and plural heat dissipating channels. The board has an upper surface. The patterned metal layer is disposed on the board and includes a first electrode, a second electrode, plural first pads and plural second pads. The first pads and the second pads are alternatively disposed on the upper surface in parallel. Parts of the first (second) pads are electrically connected to the first (second) electrode. The other parts of first pads and the other parts of second pads are electrically connected to each other. Each first pad and the adjacent second pad define a device bonding area. The heat generating elements are respectively disposed in the device bonding areas. There are multiple trenches between the two adjacent device bonding areas. The heat dissipating channels are disposed in the trenches. | 10-24-2013 |
20130240932 | SEMICONDUCTOR LIGHT-EMITTING DEVICE AND MANUFACTURING METHOD THEREOF - A semiconductor light-emitting device and a manufacturing method thereof are provided, wherein the semiconductor light-emitting device includes a substrate, a first type doped semiconductor layer, a light-emitting layer, a second type doped semiconductor layer and an optical micro-structure layer. The first type doped semiconductor layer is disposed on the substrate and includes a base portion and a mesa portion. The base portion has a top surface, and the mesa portion is disposed on the top surface of the base portion. The light-emitting layer is disposed on the first type doped semiconductor layer. The second type doped semiconductor layer is disposed on the light-emitting layer. The optical micro-structure layer is embedded in the first type doped semiconductor layer. | 09-19-2013 |
20130221394 | LIGHT EMITTING DIODE AND FLIP-CHIP LIGHT EMITTING DIODE PACKAGE - A light emitting diode (LED) is revealed. The LED includes a substrate, a first-type-doped layer, a light emitting layer, a second-type-doped layer, a plurality of first grooves, a second groove, an insulation layer, a first contact, and a second contact. The LED features that the second groove is connected to one end of each first groove and penetrates the second-type-doped layer and the light emitting layer to expose a part of the first-type-doped layer. The contact area between the first contact and the first-type-doped layer is increased. Therefore, the LED is worked at high current densities without heat accumulation. Moreover, the light emitting area is not reduced and the light emitting efficiency is not affected. The LED is flipped on a package substrate to form a flip-chip LED package. | 08-29-2013 |
20130146915 | LIGHT EMITTING DIODE AND FLIP-CHIP LIGHT EMITTING DIODE PACKAGE - A light emitting diode including a first doped layer, a light emitting layer, a second doped layer and a substrate is provided. A plurality of first grooves penetrate through the second doped layer and the light emitting layer. Thus, a partial surface of the first doped layer is exposed. At least one of the plurality of first grooves extends to edges of the second dope layer and the light emitting layer. An insulating layer is disposed over a part of second doped layer and extends to sidewalls of the first grooves. A first contact is set in the first grooves and electrically connected to the first doped layer. A second contact is set on the second doped layer and electrically connected to the second doped layer. By the first grooves, the first contact can be electrically connected to the first doped layer for improving current spreading. | 06-13-2013 |
20130134464 | LIGHT EMITTING DIODE DEVICE AND FLIP-CHIP PACKAGED LIGHT EMITTING DIODE DEVICE - The present invention relates to a light emitting diode (LED) and a flip-chip packaged LED device. The present invention provides an LED device. The LED device is flipped on and connected electrically with a packaging substrate and thus forming the flip-chip packaged LED device. The LED device mainly has an Ohmic-contact layer and a planarized buffer layer between a second-type doping layer and a reflection layer. The Ohmic-contact layer improves the Ohmic-contact characteristics between the second-type doping layer and the reflection layer without affecting the light emitting efficiency of the LED device and the flip-chip packaged LED device. The planarized buffer layer id disposed between the Ohmic-contact layer and the reflection layer for smoothening the Ohmic-contact layer and hence enabling the reflection layer to adhere to the planarized buffer layer smoothly. Thereby, the reflection layer can have the effect of mirror reflection and the scattering phenomenon on the reflected light can be reduced as well. | 05-30-2013 |
20130056776 | PLATE - A plate including a substrate, a metal reflection layer and an oxidation protection layer is provided. The substrate has a first surface and a second surface opposite to the first surface. The metal reflection layer is disposed on the first surface of the substrate. The oxidation protection layer covers the metal reflection layer. The metal reflection layer is disposed between the oxidation protection layer and the first surface of the substrate. At least one light emitting diode chip is adapted to eutectic bonding on the plate. | 03-07-2013 |
20130037796 | Light-Emitting Device and Method for Manufacturing the Same - A light-emitting device includes a first cladding layer, a light-emitting layer, a second cladding layer, an epitaxial structure including an indium-containing oxide, and an electrode unit for supplying external electricity, The electrode unit includes a first electrode disposed to be electrically connected to the first cladding layer, and a second electrode disposed above the epitaxial structure to be electrically connected to the second cladding layer through the epitaxial structure such that the external electricity is permitted to be transmitted to the light-emitting layer through the first and second electrodes. A method for manufacturing the light-emitting device is also disclosed. | 02-14-2013 |
20120205707 | LIGHT-EMITTING DIODE PACKAGE - A light-emitting diode package includes: a frame unit, and at least one light-emitting diode chip including a chip body and a contact layer disposed between the chip body and the frame unit. One of the frame unit and the contact layer contains a magnetic material, and the other one of the frame unit and the contact layer contains a material capable of being magnetically attracted to the magnetic material. | 08-16-2012 |
20120205703 | Light-Emitting Diode Package Device and Method for Making the Same - A light-emitting diode package device includes: a base unit defining a packaging space; a light-emitting diode die that is disposed inside the packaging space to electrically connect to the base unit and that is capable of emitting light; and an encapsulant that is filled in the packaging space to encapsulate the light-emitting diode die and that includes an upper surface to be exposed to external environment, and a plurality of microstructures formed on the upper surface. | 08-16-2012 |
20110139167 | Nail Care Device - A nail care device includes a covering part, a light-emitting component, and a light-emitting control module. The covering part is configured for covering a tip of a digit of a limb. The light-emitting component is disposed in the covering part in a manner that light emitted by the light-emitting component irradiates a nail on the tip of the digit covered by the covering part. The light-emitting control module is coupled to the light-emitting component and is operable to control operation of the light-emitting component. | 06-16-2011 |
20100165677 | Electronic device having a circuit protection unit - An electronic device includes a circuit protection unit providing over-current protection to a main circuit and including a series connection of first and second current limiting circuits, and a normally-open branch circuit coupled in parallel to the first current limiting circuit and operable to conduct when a voltage across the first current limiting circuit reaches a first predetermined threshold voltage not greater than an endure voltage of the first current limiting circuit. Prior to conduction of the branch circuit, the first current limiting circuit maintains a current flowing therethrough at a first limit value when a current flowing through the main circuit reaches the first limit value. Upon conduction of the branch circuit, the second current limiting circuit maintains a current flowing therethrough at a second limit value greater than the first limit value when the current flowing through the main circuit reaches the second limit value. | 07-01-2010 |