| GATAN, INC. Patent applications |
| Patent application number | Title | Published |
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| 20120085939 | Ion Beam Sample Preparation Apparatus and Methods - Disclosed are embodiments of an ion beam sample preparation apparatus and methods for using the embodiments. The apparatus comprises a tilting ion beam irradiating means in a vacuum chamber that may direct ions toward a sample, a shield blocking a portion of the ions directed toward the sample, and a shield retention stage with shield retention means that replaceably and removably holds the shield in a position. The shield has datum features which abut complementary datum features on the shield retention stage when the shield is held in the shield retention stage. The shield has features which enable the durable adhering of the sample to the shield for processing the sample with the ion beam. The complementary datum features on both shield and shield retention stage enable accurate and repeatable positioning of the sample in the apparatus for sample processing and reprocessing. The tilting ion beam irradiating means may direct ions at the sample from more than one tilt angle. A rotating shield retention stage is also disclosed which works in concert with the tilting ion beam irradiating means to improve the flexibility and efficiency of the apparatus in preparing samples for microscopic observation. | 04-12-2012 |
| 20120085938 | Ion Beam Sample Preparation Apparatus and Methods - Disclosed are embodiments of an ion beam sample preparation apparatus and methods for using the embodiments. The apparatus comprises an ion beam irradiating means in a vacuum chamber that may direct ions toward a sample, a shield blocking a portion of the ions directed toward the sample, and a shield retention stage with shield retention means that replaceably and removably holds the shield in a position. The shield has datum features which abut complementary datum features on the shield retention stage when the shield is held in the shield retention stage. The shield has features which enable the durable adhering of the sample to the shield for processing the sample with the ion beam. The complementary datum features on both shield and shield retention stage enable accurate and repeatable positioning of the sample in the apparatus for sample processing and reprocessing. A retention stage lifting means allows the creation of a loading chamber that is isolated from the main vacuum chamber where sample ion beam milling takes place. A heat sink means is configured to conduct heat away from the sample undergoing sample preparation in the ion beam. | 04-12-2012 |
| 20120085937 | Ion Beam Sample Preparation Thermal Management Apparatus and Methods - Disclosed are embodiments of an ion beam sample preparation thermal management apparatus and methods for using the embodiments. The apparatus comprises an ion beam irradiating means in a vacuum chamber that may direct ions toward a sample, a shield blocking a portion of the ions directed toward the sample, and a shield retention stage with shield retention means that replaceably and removably holds the shield in a position. The shield has datum features which abut complementary datum features on the shield retention stage when the shield is held in the shield retention stage. The shield has features which enable the durable adhering of the sample to the shield for processing the sample with the ion beam. The complementary datum features on both shield and shield retention stage enable accurate and repeatable positioning of the sample in the apparatus for sample processing and reprocessing. A heat sink means is configured to conduct heat away from the sample undergoing sample preparation in the ion beam. The ion beam irradiating means may modulate ion beam intensity between at least two intensities. The shield retention stage may be stationary or rotating. | 04-12-2012 |
| 20120085923 | Ion Beam Sample Preparation Apparatus and Methods - Disclosed are embodiments of an ion beam sample preparation apparatus and methods for using the embodiments. The apparatus comprises an ion beam irradiating means in a vacuum chamber that may direct ions toward a sample, a shield blocking a portion of the ions directed toward the sample, and a shield retention stage with shield retention means that replaceably and removably holds the shield in a position. The shield has datum features which abut complementary datum features on the shield retention stage when the shield is held in the shield retention stage. The shield has features which enable the durable adhering of the sample to the shield for processing the sample with the ion beam. The complementary datum features on both shield and shield retention stage enable accurate and repeatable positioning of the sample in the apparatus for sample processing and reprocessing. Additionally, apparatus kits are disclosed that enable the use of the same shields in the observation of prepared samples. | 04-12-2012 |
| 20100327161 | METHOD FOR DISCRIMINATION OF BACKSCATTERED FROM INCOMING ELECTRONS IN IMAGING ELECTRON DETECTORS WITH A THIN ELECTRON-SENSITIVE LAYER - Methods are disclosed for operating a device having a high energy particle detector wherein the particles create first incoming traversal events, outgoing backscatter events, higher-order in and out events and incoming events caused by particles which backscatter out of the device, hit nearby mechanical structures and are scattered back into the device. Exemplary method steps include discriminating incoming traversal events from outgoing backscatter events, higher-order in and out events and incoming events by limiting dose rate to a level at ensures that separate events do not overlap and discriminating events from background and from other events based on total energy in each event; discriminating backscatter events from incoming traversal events based on electron path shape; or determining that a first event and a second event are coincident with each other and separating incoming form backscatter events based on electron path shape and energy level. | 12-30-2010 |
| 20100123082 | METHOD FOR ELECTRON BACK-ILLUMINATION OF A SEMICONDUCTOR IMAGE SENSOR - A method is disclosed for acquiring an image in a sensor having a substrate side and a front side comprising illuminating the semiconductor image sensor with electrons that approach the sensor from the substrate side. | 05-20-2010 |
| 20100123077 | PASSIVE PIXEL DIRECT DETECTION SENSOR - A simplification of the charge-collection pixel of an imaging detector for high-energy electrons is disclosed, incorporating removal of the buffer amplifier. While sacrificing speed and noise performance of the readout somewhat and therefore appearing counter-intuitive, this configuration has the potential to significantly reduce the susceptibility of the pixel to radiation damage. | 05-20-2010 |
| 20100033605 | METHOD FOR REAL-TIME REMOVAL OF VERTICAL SCAN STREAKS IN A CCD - Methods are disclosed for correcting vertical line streaks in an interline or full-frame CCD. The method includes the step of subtracting an overscan row from each row of a previous image or from each row of a next image, such that each row of the final image contains the same readout smear effect and such that readout overscan rows contain the same smear information as each row of the final image. The method is also described for use with frame transfer CCDs. | 02-11-2010 |
| 20100032576 | RETRACTABLE LENS-COUPLED ELECTRON MICROSCOPE CAMERA WITH IMAGE SENSOR IN ELECTRON MICROSCOPE VACUUM CHAMBER - A lens-coupled camera for an electron microscope is disclosed. The camera includes a CCD, a scintillator, at least one lens, and a mirror, such that at least the CCD and scintillator are housed in the vacuum chamber of the electron microscope, which has only one vacuum chamber. In a further embodiment, the CCD, scintillator, lens and mirror are affixed to a fixed mechanical linkage such that the CCD, scintillator, lens and mirror move together when the camera is retracted. | 02-11-2010 |
| 20090080799 | METHOD FOR CREATING REFERENCE IMAGES IN ELECTRON MICROSCOPES - Methods for creating reference images of fiber optic sensor plates for use in electron microscopes. The methods include taking of reference images of stripe or dot patterns. The spatial frequency of the stripe or dot patterns is such that image artifacts of the fiber optic stacks is recorded. The reference images can then be used to correct for these artifacts. | 03-26-2009 |
