GASP Solar APS
GASP Solar APS Patent applications | ||
Patent application number | Title | Published |
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20150311072 | METHOD OF PREPARING A SUBSTRATE FOR NANOWIRE GROWTH, AND A METHOD OF FABRICATING AN ARRAY OF SEMICONDUCTOR NANOSTRUCTURES - The present invention provides a reproducible preliminary in-situ oxide removal step for patterned self-assisted III-V semiconductor nanowire growth. Here “in-situ” means located within the same treatment environment or apparatus as the nanowire growth process, e.g. with a molecular beam epitaxy (MBE) apparatus or the like. Providing an in-situ process may prevent the formation of a thin oxide layer during transfer of the substrate into the nanowire growth apparatus. | 10-29-2015 |
20140283901 | NANOSTRUCTURE, NANOSTRUCTURE FABRICATION METHOD, AND PHOTOVOLTAIC CELL INCORPORATING A NANOSTRUCTURE - The application discloses a technique for fabricating gallium-arsenide-phosphorous (GaAsP) nanostructures using gallium-assisted (Ga-assisted) Vapour-Liquid-Solid (VLS) growth, i.e. without requiring gold catalyst particles. The resulting Ga-assisted GaAsP nanostructures are free of gold particles, which renders them useful for optoelectronic applications, e.g. as a junction in a solar cell. The Ga-assisted GaAsP nanostructures can be fabricated with a band gap in the range 1.6 to 1.8 eV (e.g. at and around 1.7 eV). | 09-25-2014 |