| FURUKAWA ELECTRIC CO., LTD. Patent applications |
| Patent application number | Title | Published |
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| 20120128375 | INTEGRATED SEMICONDUCTOR LASER ELEMENT, SEMICONDUCTOR LASER MODULE, AND OPTICAL TRANSMISSION SYSTEM - An integrated semiconductor laser element includes: semiconductor lasers that oscillate at different oscillation wavelengths from one another, each laser oscillating in a single mode; an optical coupler; and a semiconductor optical amplifier. At least one of active layers of the semiconductor lasers and an active layer of the semiconductor optical amplifier have a same thickness and a same composition that is set to have a gain peak wavelength near a center of a wavelength band formed by the oscillation wavelengths. The semiconductor optical amplifier includes: an equal width portion formed on a side of the optical coupler to guide light in a single mode; and an expanded width portion formed on a light output side. The width of the expanded width portion is set according to a total thickness of well layers of the active layer of the semiconductor optical amplifier. | 05-24-2012 |
| 20120127715 | LASER MODULE - [Objective] To prevent change in a direction of an optical axis of a split light within a plane parallel to a surface on which the beam splitter is installed. | 05-24-2012 |
| 20120126818 | BATTERY STATUS DETECTION SENSOR - A battery condition detection sensor ( | 05-24-2012 |
| 20120125764 | METHOD FOR PRODUCING OXIDE THIN FILM - A method for producing an oxide thin film, including depositing sputtered particles from a metallic deposition source on a deposition area under the condition of a sputtering energy density of 9.5 W/cm | 05-24-2012 |
| 20120118537 | FLATTENED HEAT PIPE AND MANUFACTURING METHOD THEREOF - The invention provides a flattened heat pipe whose vapor flowing passage is not clogged and which has an excellent capillary force. The flattened heat pipe has a closed container formed by flattening a tubular container, a plurality of wick structures arrayed within the container in a longitudinal direction so as to form an acute-angled portion where a capillary force is large at least partially within the container, a hollow portion formed of an outer peripheral surface of the wick structure and an inner wall surface of the container and a working fluid sealed into the container. | 05-17-2012 |
| 20120118020 | METHOD OF PRODUCING OPTICAL FIBER PREFORM AND OPTICAL FIBER - A method of producing an optical fiber preform includes preparing a glass preform that has a hole extending in a longitudinal direction formed on one end of the glass preform in such a manner that a length of the hole is equal to or less than half of an entire length of the glass preform, synthesizing a porous glass preform by depositing glass particles on an outer circumference of the glass preform having the hole formed on the end, and sintering the porous glass preform after arranging the porous glass preform in such a manner that the end having the hole formed thereon points downward and the hole is open to the air. | 05-17-2012 |
| 20120118019 | METHOD OF PRODUCING OPTICAL FIBER - A method of producing an optical fiber that has a hole extending in a longitudinal direction includes preparing a glass preform that has a hole extending in a longitudinal direction, synthesizing a porous preform layer by depositing silica-based glass particles on an outer circumference of the glass preform, dehydrating the porous preform layer, sintering the dehydrated porous preform layer under a reduced pressure so that the porous preform layer becomes a translucent glass preform layer that contains closed pores, and drawing a translucent glass preform that includes the glass preform and the translucent glass preform layer so that the translucent glass preform layer becomes a transparent glass layer. | 05-17-2012 |
| 20120114000 | METHOD OF MANUFACTURING SEMICONDUCTOR OPTICAL DEVICE, METHOD OF MANUFACTURING SEMICONDUCTOR OPTICAL LASER ELEMENT, AND SEMICONDUCTOR OPTICAL DEVICE - A method of manufacturing a semiconductor optical device including a semiconductor layer includes: forming a semiconductor layer; forming a first dielectric film on a first region of a surface of the semiconductor layer; forming a second dielectric film on a second region of the surface of the semiconductor layer, the second dielectric film having a density higher than that of the first dielectric film; and performing a thermal treatment in a predetermined temperature range after the second dielectric film forming, wherein within the temperature range, as the temperature is lowered, a difference increases between a bandgap in the semiconductor layer below the second dielectric film and a bandgap in the semiconductor layer below the first dielectric film due to the thermal treatment. | 05-10-2012 |
| 20120111613 | COPPER FOIL WITH RESISTANCE LAYER, METHOD OF PRODUCTION OF THE SAME AND LAMINATED BOARD - A copper foil with a resistance layer is provided, wherein the variation value is small when it is made into a resistance element, the adhesion with the resin substrate to be laminated with is able to be sufficiently maintained, which has an excellent characteristics as a resistance element for a rigid and a flexible substrate. A copper foil with a resistance layer of the present invention comprises a copper foil on one surface of which a metal layer or alloy layer is formed from which a resistance element is to be formed, the surface of the metal layer or alloy layer being subjected to a roughening treatment with nickel particles. A method of production of a copper foil with a resistance layer of the present invention comprises: forming a resistance layer of phosphorus-containing nickel on a matte surface of an electrodeposited copper foil having crystals comprised of columnar crystal grains wherein a foundation of the matte surface is within a range of 2.5 to 6.5 μm in terms of Rz value prescribed in JIS-B-0601; and performing roughening treatment to a surface of the resistance layer with nickel particles wherein a roughness is within a range of 4.5 to 8.5 μm in terms of Rz value prescribed in JIS-B-0601. The alloy layer is for example formed from phosphorus-containing nickel. | 05-10-2012 |
| 20120097582 | SAMPLE IDENTIFICATION/SORTING APPARATUS AND SAMPLE IDENTIFICATION/SORTING METHOD - A sample identification/sorting apparatus ( | 04-26-2012 |
| 20120097372 | HEAT SINK - Provided is a heat sink capable of improving heat dissipating characteristics and saving space with a reduced fin size. The heat sink is provided with: a base plate which has one surface thermally connected to a heat generating component and which has thermally connected thereto a first heat dissipating fin section composed of a thin plate fin; an upper plate which has a second heat dissipating fin section thermally connected on one surface, the second heat dissipating fin section being composed of two kinds of thin plate fins having different heights; and a plurality of heat pipes which are disposed between the other surface of the base plate and the other surface of the upper plate by being thermally connected to the surfaces and which include a heat pipe that has at least a part thereof inserted into a part of the second heat dissipating fin section. | 04-26-2012 |
| 20120092667 | OPTICAL INFORMATION ANALYZING DEVICE AND OPTICAL INFORMATION ANALYZING METHOD - There are provided an optical information analyzing device and an optical information analyzing method in which a light receiving unit for receiving transmitted light is provided at a position directly facing an irradiating unit and which may increase the sensitivity of the received transmitted light by adjusting the position of a sample flow relative to a measurement region in a flow passage and measure the optical information on specimens with a small variation. An optical information analyzing device includes an irradiating unit that irradiates irradiation light to specimens, a transmitted light receiving unit that receives transmitted light and detects the transmitted light as a transmitted light signal, a scattering/fluorescent light receiving unit that receives lateral scattering light and fluorescent light and detects the lateral scattering light and the fluorescent light as a scattering/fluorescent light signal, a nozzle position adjusting mechanism that adjusts the position of an end portion of an introduction nozzle so as to align the position of the end portion of the introduction nozzle with the transmitted light receiving unit and the irradiating unit, and an analyzing unit that measures the optical information on the specimen on the basis of the detected transmitted light signal and the detected scattering/fluorescent light signal and analyzes the specimen. | 04-19-2012 |
| 20120088120 | METAL-CLAD LAMINATE AND METHOD FOR PRODUCTION OF METAL-CLAD LAMINATE - Disclosed is a metal-clad laminate and a method for producing a metal-clad laminate wherein adhesion between a metal layer and a thermoplastic film serving as a base material is improved, the deposition rate of a plating coat on the base material is improved, and the insulating resistance after etching is properly adjusted at the same time. | 04-12-2012 |
| 20120080215 | SLIDE DOOR CONSTANT FEEDING SYSTEM - There is provided a slide door constant feeding system whose crossover portion of a wire harness does not interfere with a wall portion of a door trim in opening/closing a slide door and which excels in durability. The slide door constant feeding system comprises a door-side feeding fixture having a main part attached to a door trim, a leg member whose one end is attached to the main part and a door-side anchoring section attached to other end of the leg member and anchoring a door-side end of a crossover portion of a wire harness, a body-side feeding fixture attached to a car body and anchoring a body-side end of the crossover portion and the wire harness for feeding power from the car body-side to the door-side. The door-side anchoring section moves in opening/closing the slide door. | 04-05-2012 |
| 20120069594 | INTERNAL LIGHTING DISPLAY DEVICE AND DISPLAY PANEL THEREOF - An interior lighting display device and a display panel thereof capable of effectively preventing a dark area from being formed in the display panel. A film or sheet that reflects light is disposed on a back surface and a side surface of a display panel of an interior lighting display device. For example, the film or sheet is disposed on a back surface and a side surface of a region that is a colored area having low transmittance of the display panel, and an area in which a light source is not present behind the display panel. In addition, a light reflective body is placed in an area in which the light source is not present within the interior lighting display device. | 03-22-2012 |
| 20120060964 | ELECTRIC WIRE END TREATMENT DEVICE AND ELECTRIC WIRE END TREATMENT METHOD TECHNICAL FIELD - An end treatment portion | 03-15-2012 |
| 20120045213 | TIME DIVISION MULTIPLEXING TRANSMISSION SYSTEM AND METHOD OF CONTROLLING SYSTEM OF SAME - There is provided a time division multiplexing transmission system which is capable of increasing the transmission efficiency. The system comprises OLT | 02-23-2012 |
| 20120039614 | OPTICAL COMMUNICATION MODULE, AND OPTICAL COMMUNICATION SYSTEM IN WHICH OPTICAL COMMUNICATION MODULE IS USED - The object of the present invention is to provide an optical communication module in which the pin arrangement can be applied flexibly, and an optical communication system in which this optical communication module is used. | 02-16-2012 |
| 20120034728 | LINEAR SEMICONDUCTOR SUBSTRATE, AND DEVICE, DEVICE ARRAY AND MODULE, USING THE SAME - The linear semiconductor substrate | 02-09-2012 |
| 20120027352 | SEMICONDUCTOR LASER MODULE AND OPTICAL MODULE - The present invention provides a semiconductor laser module in which a coupling efficiency does not easily vary even though a displacement amount varies by the effect of welding. The semiconductor laser module comprises: a semiconductor laser element | 02-02-2012 |
| 20120021917 | SUBSTRATE FOR SUPERCONDUCTING WIRING, SUPERCONDUCTING WIRING AND PRODUCTION METHOD FOR SAME - Disclosed is a low-cost metal substrate which is resistant to high-temperature oxidation, has excellent strength, is non-magnetic and is ideal for a high-temperature superconducting wire to be used at or lower than liquid nitrogen temperature. Austenitic stainless steel containing 0.4 weight or more of nitrogen is used as the metal substrate for the superconducting wire. After heat treatment of 700 to 950° C. in the high-temperature superconducting layer formation step is carried out, the metal substrate has an extremely high 0.20 proof stress at liquid nitrogen temperature. | 01-26-2012 |
| 20120020383 | SURFACE EMITTING LASER, LIGHT SOURCE, AND OPTICAL MODULE - A surface emitting laser includes lower and upper multilayer mirrors, first-conductivity-type and second-conductivity-type contact layers formed between the lower and the upper multilayer mirrors, an active layer formed between the first-conductivity-type and the second-conductivity-type contact layers, a current confinement layer formed between the second-conductivity-type contact layer and the active layer, and first and second composition gradient layers formed facing each other across the current confinement layer. The first composition gradient layer and the second composition gradient layer are formed such that bandgap energy of each of the layers is monotonically decreased from the current confinement layer to an adjacent layer and approach bandgap energy of the adjacent layer in a growth direction. | 01-26-2012 |
| 20120020379 | SEMICONDUCTOR LASER MODULE AND SUPPRESSION MEMBER - Above a Peltier element disposed on a bottom of a case, bases that are platy members of two or more layers and have different expansion coefficients from each other are stacked. At least on a partial region of the base serving as an uppermost layer, a suppression member having an expansion coefficient different from that of the base serving as the uppermost layer is further provided. An optical element is disposed on the base and/or the suppression member. Even when a warp is likely to occur in the Peltier element, a stacked-plate structure of the base, the base, and the suppression member suppresses an occurrence of such a warp, whereby warps hardly occur in the base and the suppression member, and a shift hardly occurs in an optical axis between a beam splitter and an etalon. | 01-26-2012 |
| 20120018192 | CONDUCTOR OF AN ELECTRICAL WIRE FOR WIRING, METHOD OF PRODUCING A CONDUCTOR OF AN ELECTRICAL WIRE FOR WIRING, ELECTRICAL WIRE FOR WIRING, AND COPPER ALLOY SOLID WIRE - A conductor of an electrical wire for wiring, which is obtained by stranding a plurality of copper alloy wire materials each having a composition containing 0.3 to 1.5 mass % of Cr, with the balance being Cu and inevitable impurities, and which has a tensile strength of 400 MPa or more and 650 MPa or less, an elongation of 7% or more when broken, an electrical conductivity of 65% IACS or more, a ratio between a 0.2% proof stress and the tensile strength of 0.7 or more and 0.95 or less, and a work-hardening exponent of 0.03 or more and 0.17 or less; a method of producing the same; an electrical wire for wiring, in which an insulating cover is provided on the conductor; and a copper alloy solid wire for the conductor. | 01-26-2012 |
| 20120015816 | CURRENT TERMINAL STRUCTURE OF SUPERCONDUCTING WIRE AND SUPERCONDUCTING CABLE HAVING THE CURRENT TERMINAL STRUCTURE - A current terminal structure of a superconductor has a former, and a superconducting wire wound around the former in one or more layers and including a substrate and a superconducting layer formed on the substrate. A first layer superconducting wire wound around immediately above the former is arranged so that a substrate side thereof becomes outside and a superconducting layer side thereof becomes inside. A surface of the superconducting layer at an end of the first layer superconducting wire, which is directed toward the inside, and part of a surface of the superconducting layer of a connection superconducting wire, which is directed toward the outside, are faced and connected to each other. | 01-19-2012 |
| 20120014636 | WAVEGUIDE-TYPE OPTICAL CIRCUIT - A waveguide-type optical circuit comprises an optical coupler being an optical branch coupler constructed from waveguide cores which are closely arranged each other, and dummy patterns that lay along sides of the waveguide cores in the optical coupler for preventing optical major axes of the waveguide cores from inclining. | 01-19-2012 |
| 20120008908 | MULTI-CORE OPTICAL FIBER - A multi-core optical fiber includes: a plurality of core portions; and a cladding portion positioned around the plurality of core portions and including a marker for identifying a position of a specific one of the plurality of core portions. | 01-12-2012 |
| 20120008907 | OPTICAL FIBER - The present invention provides an optical fiber which can have a larger NA and a preferable mechanical strength even with a monolayer coating and can be fabricated at low cost, and which can transmit excitation light efficiently reducing a loss even under a high temperature environment during the operation of a fiber laser. An optical fiber according to an embodiment of the present invention includes a core, a glass cladding which is provided at a periphery of the core and has a refractive index smaller than the core, and a polymer cladding which is provided at a periphery of the glass cladding and has a refractive index smaller than the glass cladding. The polymer cladding contains fluorine and the polymer cladding has a difference between an elasticity modulus at 60° C. and that at 23° C. equal to or smaller than 100 MPa and also has an elasticity modulus equal to or larger than 200 MPa at 23° C. | 01-12-2012 |
| 20120008659 | SURFACE EMITTING LASER - A surface emitting laser includes a cavity region formed on a group-III-V compound substrate, which includes an active layer and a current confinement layer that has an aluminum oxide compound and confines a current path through which a current is injected into the active layer, an upper DBR mirror and a lower DBR mirror formed on the substrate, sandwiching the cavity region, and a graded-composition layer disposed to contact the current confinement layer, which has an aluminum composition ratio decreasing monotonically as a distance from the current confinement layer increases. The graded-composition layer includes a first region that contacts the current confinement layer and an oxidation stop layer that contacts the first region and that has a change rate of the aluminum composition ratio larger than that of the first region. The graded-composition layer is oxidized from an interface with the current confinement layer to at least a portion of the oxidation stop layer. | 01-12-2012 |
| 20120006063 | METHOD OF MANUFACTURING GLASS SUBSTRATE - A method includes forming a glass ribbon by heating and softening a glass plate preform and drawing the glass plate preform to a predetermined thickness in a heating furnace; and performing coring on the glass ribbon in order to form circular substrates in a straight line along a longitudinal direction of the glass ribbon. | 01-12-2012 |
| 20120004864 | OPTICAL MEASURING APPARATUS AND SPECIMEN DISCRIMINATING AND DISPENSING APPARATUS - The invention provides an optical measuring apparatus having a plurality of measuring sections each having a light irradiating section for irradiating light to specimens and a light receiving section for receiving optical data acquired by irradiating the light to the specimens and a flow rate calculating section for calculating flow rate values of the specimens based on a difference of measured times of the optical data measured by the plurality of measuring sections with respect to the specimens and a distance between the plurality of measuring sections. The optical measuring apparatus measures the optical data of the specimens by irradiating light to the specimens, i.e., the objects to be measured, dispersed within a sample fluid flowing through a flow passage. The optical measuring apparatus further includes a flow rate graph generating section for generating flow rate graph data in which the values of flow rate of the specimens calculated by the flow rate calculating section are arrayed in order of calculation in time-series manner and for outputting the generated flow rate graph data to a displaying section. | 01-05-2012 |
| 20120002918 | WAVELENGTH MULTIPLEXER/DEMULTIPLEXER AND METHOD OF MANUFACTURING THE SAME - The present invention provides a wavelength multiplexer/demultiplexer comprising a Mach-Zehnder interferometer and an arrayed waveguide diffraction grating, the wavelength multiplexer/demultiplexer having a simple configuration and being capable of reducing the degradation in the temperature compensation characteristics of a temperature compensation material provided in the Mach-Zehnder interferometer or the peeling-off of the temperature compensation material, and a method of manufacturing the same. A wavelength multiplexer/demultiplexer comprises an AWG including two separated slab waveguides and an MZI including two arm waveguides. A temperature compensation groove is formed in the two arm waveguides, wherein in a space between the temperature compensation groove, and two separated slab waveguides, a compensation material, the refractive index matching that of the AWG or Mach-Zehnder interferometer, the compensation material having a temperature dependence coefficient with a sign different from that of the temperature dependence coefficient of the waveguide core and having plasticity or fluidity, is filled. | 01-05-2012 |
| 20110318913 | SEMICONDUCTOR DEVICE AND METHOD FOR FABRICATING THE SAME - There is provided a semiconductor device and a method for fabricating the same whose withstanding characteristic may be enhanced and whose ON resistance may be reduced. A MIS-type HEMT includes a carrier traveling layer made of a group-III nitride semiconductor and formed on a supporting substrate, a carrier supplying layer made of a group-III nitride semiconductor and formed on the carrier traveling layer, source and drain electrodes formed on the carrier supplying layer, insulating films formed on the carrier supplying layer and a gate electrode formed on the insulating films. The insulating film is formed in a region interposed between the source and drain electrodes and has a trench whose cross-section is inverted trapezoidal and whose upper opening is wider than a bottom thereof. The gate electrode is formed at least from the bottom of the trench onto the insulating films on the side of the drain electrode. | 12-29-2011 |
| 20110316048 | SEMICONDUCTOR DEVICE AND METHOD FOR FABRICATING THE SAME - There is provided a semiconductor device and a method for fabricating the same whose withstanding characteristic may be enhanced and whose ON resistance may be reduced. A MIS-type HEMT includes a carrier traveling layer made of a group-III nitride semiconductor and formed on a supporting substrate, a carrier supplying layer made of a group-III nitride semiconductor and formed on the carrier traveling layer, source and drain electrodes formed on the carrier supplying layer, insulating films formed on the carrier supplying layer and a gate electrode formed on the insulating films. The insulating film is formed in a region interposed between the source and drain electrodes and has a trench whose cross-section is inverted trapezoidal and whose upper opening is wider than a bottom thereof. The gate electrode is formed at least from the bottom of the trench onto the insulating films on the side of the drain electrode. | 12-29-2011 |
| 20110314873 | METHOD OF MANUFACTURING OPTICAL FIBER - A coating is applied on an optical fiber drawn from a melted tip of an optical-fiber preform. A glass spin is applied to a coated optical fiber by gripping the coated optical fiber with at least a pair of spinning applying rollers arranged in different levels with parallel rotation axes, rotating the spinning applying rollers so that the coated optical fiber is guided in a predetermined direction, and alternately shifting the spinning applying rollers in opposite directions along the rotation axes. The glass spin is applied to the coated optical fiber in a state in which each of the rotation axes is tilted at a predetermined angle from a plane perpendicular to the first direction. | 12-29-2011 |
| 20110310916 | SEMICONDUCTOR LASER MODULE - A semiconductor laser module includes a semiconductor device including a semiconductor laser and a bending waveguide through which a laser light emitted from the semiconductor laser propagates, a beam splitter splitting the laser light into a first laser light and a second laser light, a plurality of detectors respectively arranged at different positions in a cross section of a light flux of the second laser light to detect the second laser light, and a waveform shaping unit provided on an optical path of the laser light. The waveform shaping unit is configured to make a relation between an output of the semiconductor laser and detection values of the detectors approach a linear relation. | 12-22-2011 |
| 20110305253 | SEMICONDUCTOR LASER MODULE - A semiconductor laser module includes a semiconductor laser section, a light selecting section, and an optical converting section. The semiconductor laser section includes a semiconductor laser substrate, a plurality of semiconductor laser elements mounted on the semiconductor laser substrate, and a first temperature adjusting element for adjusting temperature of the semiconductor laser elements. The light selecting section includes a light selecting element substrate and a light selecting element mounted on the light selecting element substrate and optically connected to the semiconductor laser elements, which selects laser light output from at least one of the semiconductor laser elements. The optical converting section includes an optical converting element substrate, an optical converting element mounted on the optical converting element substrate and optically connected to the light selecting element, which converts laser light output from the light selecting element, and a second temperature adjusting element for adjusting temperature of the optical converting element. | 12-15-2011 |
| 20110293926 | LEAD FRAME FOR OPTICAL SEMICONDUCTOR DEVICES, METHOD OF PRODUCING THE SAME, AND OPTICAL SEMICONDUCTOR DEVICE - A lead frame for optical semiconductor devices in which a layer | 12-01-2011 |
| 20110287943 | BASE FOR SUPERCONDUCTING WIRE AND SUPERCONDUCTING WIRE - A base for a superconducting wire, the base includes: a metal substrate; a bed layer constituted of nesosilicate and formed on the metal substrate; and an oriented layer formed on the bed layer. | 11-24-2011 |
| 20110284679 | WIRE BODY TAKE-UP DEVICE AND WIRE BODY TAKE-UP METHOD - A line body take-up device takes up the line body around an outer circumferential surface of a winding body of the bobbin at a predetermined take-up pitch with aligned winding while moving the bobbin to traverse. A winding position of the line body is sequentially changed in the axial direction, to form a wound line body layer; inverting the direction of traverse when the line body is wound up to an inner edge of the flange of the bobbin; and winding the line body around an outer circumferential surface of the previous wound line body layer, formed by winding the line body so far, in an aligned manner at the take-up pitch to form a subsequent wound line body layer, by use of a line body turn part by which the previous wound line body layer is transferred to the subsequent wound line body layer; the line body take-up device. | 11-24-2011 |
| 20110274396 | OPTICAL FIBER - The present invention provides an optical fiber in which the transmission loss increase is suppressed even under a high-humidity condition or under a water-immersed condition. A colored optical fiber ( | 11-10-2011 |
| 20110274131 | TWO-DIMENSIONAL SURFACE-EMITTING LASER ARRAY ELEMENT, SURFACE-EMITTING LASER DEVICE AND LIGHT SOURCE - Included are a plurality of surface-emitting laser elements each of which includes a substrate; a lower multilayer reflective mirror and an upper multilayer reflective mirror that are formed on the substrate and are formed from a periodic structure of a high-refractive index layer and a low-refractive index layer; an active layer provided between the lower multilayer reflective mirror and the upper multilayer reflective mirror; a lower contact layer positioned between the active layer and the lower multilayer reflective mirror, and is extended to an outer peripheral side of the upper multilayer reflective mirror; a lower electrode formed on a surface of a portion where the lower contact layer is extended; and an upper electrode for injecting a current to the active layer, wherein the surface-emitting laser elements are electrically connected in series to each other to form a series-connected element array. This allows provision of a two-dimensional surface-emitting laser array element capable of achieving high energy conversion efficiency with a simple structure and capable of high integration, and a surface-emitting laser device and a light source using the same. | 11-10-2011 |
| 20110268402 | SEMICONDUCTOR OPTICAL DEVICE - A semiconductor optical device includes at least a lower cladding layer formed on a semiconductor substrate, a core layer formed on the lower cladding layer, and an upper cladding layer formed on the core layer. The core layer includes a first core layer of a material susceptible to oxidation and a second core layer of a material unsusceptible to oxidation, the first core layer and the second core layer being connected in sequence in an optical propagation direction. The second core layer is formed at a facet where a light is input or output. | 11-03-2011 |
| 20110261852 | SEMICONDUCTOR LASER ELEMENT AND MANUFACTURING METHOD THEREOF - A semiconductor laser element includes a first electrode, a second electrode, a first reflecting mirror, a second reflecting mirror, and a resonator. The resonator includes an active layer, a current confinement layer, a first semiconductor layer having a first doping concentration formed at a side opposite to the active layer across the current confinement layer, and a second semiconductor layer having a second doping concentration higher than the first doping concentration formed between the first semiconductor layer and the current confinement layer. The first electrode is provided to contact a part of a surface of the first semiconductor layer. The first semiconductor layer has a diffusion portion into which a component of the first electrode diffuses. The second semiconductor layer contacts the diffusion portion. The second semiconductor layer is positioned at a node of a standing wave at a time of laser oscillation of the semiconductor laser element. | 10-27-2011 |
| 20110261849 | SEMICONDUCTOR LIGHT EMITTING ELEMENT AND METHOD OF MANUFACTURING THEREOF - A semiconductor light emitting element comprising: a buffer layer that is grown by using a growth substrate including ZnO, the buffer layer being made by using an AlGaInN-based material including In and being configured so that the growth surface thereof has a nitrogen polar plane; and an active layer that is formed on the buffer layer, the active layer being made by using an AlGaInN-based material including In and being configured so that the growth surface thereof has a group-III polar plane. | 10-27-2011 |
| 20110261846 | VERTICAL CAVITY SURFACE EMITTING LASER APPARATUS - A surface emitting laser apparatus includes an arithmetic processing unit including an I/O unit for externally inputting an instruction and a core unit that performs an operation based on the instruction and outputs a differential voltage signal modulated with a predetermined amplitude according to a result of the operation, capacitors respectively arranged on output paths of the differential voltage signal, and a surface emitting laser device that is directly connected to the arithmetic processing unit via the capacitors. An I/O voltage and a core voltage are externally supplied to the I/O unit and the core unit, respectively. The arithmetic processing unit generates a driving voltage signal by superimposing the differential voltage signal with the core voltage commonly supplied as a bias voltage without stepping up or down the core voltage and without amplifying the differential voltage signal and supplies the driving voltage signal to the surface emitting laser device. | 10-27-2011 |
| 20110255834 | OPTICAL FIBER CABLE - An optical fiber cable enabling further reduction of possibilities of disconnection of optical fiber due to, for instance, cicada oviposition. The optical fiber cable ( | 10-20-2011 |
| 20110254055 | FIELD EFFECT TRANSISTOR AND MANUFACTURING METHOD THEREOF - A field effect transistor includes a channel layer of group-III nitride-based compound semiconductor; an interface layer formed on the channel layer and of Al | 10-20-2011 |
| 20110243502 | OPTICAL MULTIPLEXER/DEMULTIPLEXER MODULE AND PRISM USING FOR THE SAME - An optical multiplexer/demultiplexer module comprises: a plurality of prisms, each having an inclined surface that is formed by one of the four orthogonal corners of a transparent rectangular solid glass plate being cut and removed at a 45° angle with respect to the end surface; a frame for housing said plurality of prisms; and a plurality of collimator units that convert light having a different wavelength for each prism to collimated light, and inputs the light to the respective prism. When light a having different wavelength is input to a respective prism, the input light is reflected two times, by the inclined surface and a second end surface, after which the light is output from the respective prism. The light that is output from a previous stage prism of the plurality of prisms advances along the same optical path as the light that is output from a later stage prism, so the light that is output from each respective prism is sequentially multiplexed and wavelength multiplexed light is output from the third end surface of the final stage prism. | 10-06-2011 |
| 20110243494 | SEMICONDUCTOR OPTICAL AMPLIFIER MODULE - Included are a semiconductor device unit in which a semiconductor optical amplifier and a first semiconductor photo detector being configured to monitor a part of an input light input to the semiconductor optical amplifier or a part of an output light output from the semiconductor optical amplifier are integrated on a mutually same substrate, and a passive waveguide unit connected to the semiconductor device unit and in which a first passive waveguide being configured to cause the input light to be input to the semiconductor optical amplifier or to cause the output light to be output from the semiconductor optical amplifier and a second passive waveguide branching from the first passive waveguide and being configured to cause a part of the input light or a part of the output light to be input to the first semiconductor photo detector are provided on a mutually same substrate. | 10-06-2011 |
| 20110241564 | SURFACE EMITTING LASER, SURFACE EMITTING LASER ARRAY, LIGHT SOURCE AND OPTICAL MODULE - A surface emitting laser is formed of a composition in which bandgap energy of layers from immediately above a current confinement layer to a second conductivity type contact layer is reduced towards the second conductivity type contact layer in a stacking direction, and a composition in which bandgap energy of layers from immediately below the current confinement layer to a first conductivity type contact layer is reduced towards the first conductivity type contact layer in a stacking direction while bypassing a quantum well layer or a quantum dot of an active layer, and includes a second conductivity type cladding layer including a material for reducing the mobility of carriers. | 10-06-2011 |
| 20110241088 | FIELD EFFECT TRANSISTOR, METHOD OF MANUFACTURING FIELD EFFECT TRANSISTOR, AND METHOD OF FORMING GROOVE - A field effect transistor includes a high resistance layer on a substrate, a semiconductor operation layer that is formed on the high resistance layer and includes a channel layer that has the carbon concentration of not more than 1×10 | 10-06-2011 |
| 20110241017 | FIELD EFFECT TRANSISTOR - A field effect transistor includes: a buffer layer that is formed on a substrate; a high resistance layer or a foundation layer that is formed on the buffer layer; a carbon-containing carrier concentration controlling layer that is formed on the high resistance layer or the foundation layer; a carrier traveling layer that is formed on the carrier concentration controlling layer; a carrier supplying layer that is formed on the carrier traveling layer; a recess that is formed from the carrier supplying layer up to a predetermined depth; source/drain electrodes that are formed on the carrier supplying layer with the recess intervening therebetween; a gate insulating film that is formed on the carrier supplying layer so as to cover the recess; and a gate electrode that is formed on the gate insulating film in the recess | 10-06-2011 |
| 20110226508 | INSULATED WIRE - An inverter surge-resistant insulated wire, having an enamel baked layer, an adhesive layer, and an extrusion-coated resin layer, around the outer periphery of a conductor, wherein the sum of the thickness of the enamel baked layer, the extrusion-coated resin layer, and the adhesive layer is 60 μm or more, wherein the thickness of the enamel baked layer is 50 μm or less, and wherein the extrusion-coated resin layer is formed from a polyphenylene sulfide resin composition, which contains a polyphenylene sulfide polymer having a melt viscosity at 300° C. of 100 Pa·s or more, 2 to 8 mass % of a thermoplastic elastomer, and an antioxidant, and which has a tensile modulus of elasticity at 25° C. of 2,500 MPa or more, and a tensile modulus of elasticity at 250° C. of 10 MPa or more. | 09-22-2011 |
| 20110222575 | FURNACE FOR DEHYDRATING AND SINTERING POROUS GLASS PREFORM - A furnace for dehydrating and sintering a porous glass preform includes a core tube that passes through a center portion of a furnace body to accommodate therein the porous glass preform, a heater that is arranged around the core tube in the furnace body to heat the porous glass preform in the core tube, and a core tube weight dividing and bearing means that is arranged at an outer periphery of the core tube to divide and bear the weight of the core tube in its longitudinal direction. The core tube weight dividing and bearing means includes a plurality of collars that is protruded at a predetermined interval in the longitudinal direction at the outer periphery of the core tube, a first weight receiving means that supports the collars at the outer periphery of the core tube, and a second weight receiving means that bears the weight of the first weight receiving means. | 09-15-2011 |
| 20110218113 | SUBSTRATE FOR FABRICATING SUPERCONDUCTIVE FILM, SUPERCONDUCTIVE WIRES AND MANUFACTURING METHOD THEREOF - Provided is a substrate for superconductive film formation, which includes a metal substrate, and an oxide layer formed directly on the metal substrate, containing chromium oxide as a major component and having a thickness of 10-300 nm and an arithmetic average roughness Ra of not more than 50 nm. A method of manufacturing a substrate for superconductive film formation, which includes forming an oxide layer directly on a metal substrate, the oxide layer containing chromium oxide as a major component and having a thickness of 10-300 nm and an arithmetic average roughness Ra of not more than 50 nm. | 09-08-2011 |
| 20110215424 | SEMICONDUCTOR DEVICE AND MANUFACTURING METHOD THEREOF - A semiconductor device includes a semiconductor operating layer that is made of group-III nitride-based compound semiconductor and a first electrode and a second electrode formed on the semiconductor operating layer. Sheet carrier density of the semiconductor operating layer is no less than 1×10 | 09-08-2011 |
| 20110209903 | ULTRA-THIN COPPER FOIL WITH CARRIER AND COPPER-CLAD LAMINATE BOARD OR PRINTED CIRCUIT BOARD SUBSTRATE - The invention has as its object to provide an ultra-thin copper foil with a carrier which suppresses occurrence of blistering and is stable in peeling strength, in particular provides an ultra-thin copper foil with a carrier enabling easy peeling of a carrier foil from an ultra-thin copper foil even under a high temperature environment. As means for that, there is provided an ultra-thin copper foil with a carrier comprised of a carrier foil, a release layer, and a copper foil, wherein the release layer is formed by a first release layer disposed on the carrier foil side and a second release layer disposed on the ultra-thin copper foil side, there is a first interface between the carrier foil and the first release layer, a second interface between the ultra-thin copper foil and the second release layer, and a third interface between the first release layer and the second release layer, and the peeling strengths at the interfaces are first interface>third interface, and second interface>third interface. | 09-01-2011 |
| 20110206331 | MULTI-CORE OPTICAL FIBER - A multi-core optical fiber includes a plurality of core portions. The diameter of each of the core portions is 12 micrometers or smaller, the relative refractive-index difference of the core portions with respect to the cladding portion is 0.2% or larger, the cut-off wavelength is 1.53 micrometers or smaller, the bending loss at a 1.55-micrometer wavelength is 10 dB/m or smaller, the effective core area at a 1.55-micrometer wavelength is 30 μm | 08-25-2011 |
| 20110206082 | SEMICONDUCTOR LASER AND SEMICONDUCTOR LASER MODULE - A semiconductor laser outputs a laser light from an output facet of a waveguide having an index waveguide structure, via a lens system. The waveguide includes, in order from a rear facet opposite to the output facet, a first narrow portion, a wide portion that is wider than the first narrow portion, a second narrow portion narrower than the wide portion, a first tapered portion formed between the first narrow portion and the wide portion, which expands toward the wide portion, and a second tapered portion formed between the wide portion and the second narrow portion, which narrows toward the second narrow portion. Each of the first narrow portion, the wide portion, and the second narrow potion has a uniform width. | 08-25-2011 |
| 20110199612 | METHOD FOR OPTICAL MEASUREMENT AND OPTICAL MEASUREMENT APPARATUS - An optical measurement apparatus can be provided, in which the sample is optically measured without loss of the illuminating light with high sensitivity. A glass plate as the transparent member | 08-18-2011 |
| 20110198669 | TRANSISTOR AND METHOD FOR FABRICATING THE SAME - The invention provides a transistor having a leak current between a source and drain in a nitride compound semiconductor formed on a substrate that is reduced. A gate electrode, a source electrode and a drain electrode are formed respectively on the surface of the nitride compound semiconductor formed on the silicon substrate in the transistor. At least one of the source electrode and the drain electrode is surrounded by an auxiliary electrode connected with the gate electrode. Because a depletion layer is formed in the nitride compound semiconductor under the auxiliary electrode, a route of the leak current is shut off and the leak current between the source and drain may be effectively reduced. | 08-18-2011 |
| 20110189501 | FLEXIBLE COPPER CLAD LAMINATE - In order to provide a flexible laminate circuit board using a surface treated copper foil satisfying all of a bonding strength of a copper foil with respect to polyimide, acid resistance, and etching property, in a flexible laminate circuit board formed by a copper foil on the surface of a polyimide resin layer, the copper foil is a surface treated copper foil formed by depositing an Ni—Zn alloy onto at least one surface of a untreated copper foil, and the Zn deposition amount in the deposited Ni—Zn alloy is 6% or more and 15% or less of the (Ni deposition amount+Zn deposition amount), and the Zn deposition amount is 0.08 mg/dm | 08-04-2011 |
| 20110189499 | SURFACE TREATED COPPER FOIL AND COPPER CLAD LAMINATE - To provide a surface treated copper foil satisfying all of the bonding strength to polyimide film, chemical resistance, and etching property, and to provide a CCL using the surface treated copper foil, a surface treated copper foil is formed being comprising an untreated copper foil on at least one surface of which Ni—Zn alloy is deposited, wherein Zn content (wt %)=Zn deposition amount/(Ni deposition amount+Zn deposition amount)×100 is 6% or more and 15% or less, and Zn deposition amount is 0.08 mg/dm | 08-04-2011 |
| 20110188824 | MANUFACTURING METHOD OF PHOTONIC BAND GAP FIBER AND PHOTONIC BAND GAP FIBER - A manufacturing method of a photonic band gap fiber which includes measuring a hole diameter d | 08-04-2011 |
| 20110177544 | METHOD FOR DISTINGUISHING AND SORTING OF CELLS AND DEVICE THEREFOR - A method for distinguishing and sorting cells characterized by comprising distinguishing and sorting a specific cell mass or a part of the cells in the cell mass with the use of transmitted light data reflecting the morphological characteristics of the cells such as size and shape optionally together with side-scattering light data reflecting the characteristics of the internal structure of the cells. The part of the cells in the specific cell mass as described above are at the G1 stage or at a part of the M stage in the cell cycle. A part of the cells at the G1 stage are referred to as the left bottom line in an analytical dispersion diagram of the cells wherein the abscissa indicates the transmitted light data, while a part of the cells at the M stage are referred to as the right bottom line in the analytical dispersion diagram of the cells wherein the abscissa indicates the transmitted light data. | 07-21-2011 |
| 20110177489 | SPECIMEN IDENTIFICATION AND DISPENSATION DEVICE AND SPECIMEN IDENTIFICATION AND DISPENSATION METHOD - A specimen identification and dispensation device includes an optical measurement device which is an identification part for measuring and identifying optical information on a specimen by emitting exciting light to the specimen being a measurement target dispersed in a liquid flowing through inside of a capillary, a dispensation part for dispensing the identified specimen into wells being sections to be dispensed through a nozzle, and a concentration adjustment part which adjusts the number of the specimens contained in an aliquot solution to a desired number according to the concentration of a sample liquid and the amount of the aliquot solution. The dispensation part is movable three-dimensionally with respect to the identification part and the nozzle. | 07-21-2011 |
| 20110177257 | METHOD OF MANUFACTURING OPTICAL FIBER - A method of manufacturing an optical fiber, comprises applying a UV cured resin to an outer circumference of a running glass optical fiber, forming an accompanying flow composed of an inert gas near a surface of the resin by passing the glass optical fiber immediately after having the resin being applied through an atmosphere of the inert gas, and forming a coating by irradiating the resin coated with the accompanying flow with ultraviolet ray to cure the resin while the glass optical fiber accompanied by the accompanying flow is passed through a UV transmission tube to which a gas containing oxygen is supplied. | 07-21-2011 |
| 20110176776 | MULTI-CORE OPTICAL FIBER, OPTICAL CONNECTOR AND METHOD OF MANUFACTURING MULTI-CORE OPTICAL FIBER - A multi-core optical fiber which has a plurality of core portions arranged separately from one another in a cross-section perpendicular to a longitudinal direction, and a cladding portion located around the core portions, the multi-core optical fiber comprises a cylindrical portion of which diameter is even, and a reverse-tapered portion gradually expanding toward at least one edge in the longitudinal direction, wherein a gap between each adjacent ones of the core portions in the reverse-tapered portion is greater than that in the cylindrical portion. | 07-21-2011 |
| 20110174020 | OPTICAL FIBER MANUFACTURING METHOD - A method of manufacturing an optical fiber which comprises heating and melting one end of an optical fiber preform made of a glass, drawing a glass optical fiber from the one end, measuring a total volume of the drawn glass optical fiber, and carrying out a control of changing a drawing speed of the glass optical fiber on the basis of the measured total volume. | 07-21-2011 |
| 20110171491 | ELECTRODEPOSITED COPPER FOIL AND COPPER CLAD LAMINATE - To provide an electrodeposited copper foil having flexibility and bending property equivalent to or better than that of rolled copper foil, an electrodeposited copper foil wherein regarding a crystal structure after heat treatment is applied to the electrodeposited copper foil wherein LMP defined as formula 1 is 9000 or more, either color tone of a red system or a blue system occupies 80% or more in a surface in the EBSP analysis is provided. | 07-14-2011 |
| 20110164641 | OPTICAL SEMICONDUCTOR DEVICE AND PUMPING LIGHT SOURCE FOR OPTICAL FIBER AMPLIFIER - A semiconductor device of the invention is formed so that n-type InP current blocking layers enter the inside of p-type InP cladding layers, i.e., the n-type current blocking layers ride over the upper part of the p-type InP cladding layers, so that a distance between the n-type InP current block layers composing a current blocking region is narrower than a width of the p-type cladding layers contacting with the n-type InP current blocking layers. Thereby, the semiconductor device whose leak current in the current blocking region may be reduced which permits high-output and high-temperature operations may be readily fabricated. | 07-07-2011 |
| 20110150402 | OPTICAL FIBER CABLE - An optical fiber cable which is suitably set in a conduit by pushing the optical fiber cable into the conduit so as to insert the optical fiber cable through the conduit and which does not reduce the ease of manufacture and the mechanical characteristics of the optical fiber cable. The optical fiber cable includes an optical fiber cable core wire and a sheath covering the optical fiber cable core wire, wherein a dynamic friction coefficient between a surface of the sheath of the optical fiber cable and a surface of a sheath of another optical fiber cable is 0.17 to 0.34, and a dynamic friction coefficient between the surface of the sheath of the optical fiber cable and a surface of a sheet composed of polyvinyl chloride is 0.30 to 0.40. | 06-23-2011 |
| 20110141553 | RAMAN AMPLIFIER, OPTICAL REPEATER, AND RAMAN AMPLIFICATION METHOD - A Raman amplifier according to the present invention comprises a plurality of pumping means using semiconductor lasers of Fabry-Perot, DFB, or DBR type or MOPAs, and pumping lights outputted from the pumping means have different central wavelengths, and interval between the adjacent central wavelength is greater than 6 nm and smaller than 35 nm. An optical repeater according to the present invention comprises the above-mentioned Raman amplifier and adapted to compensate loss in an optical fiber transmission line by the Raman amplifier. In a Raman amplification method according to the present invention, the shorter the central wavelength of the pumping light the higher light power of said pumping light. In the Raman amplifier according to the present invention, when a certain pumping wavelength is defined as a first channel, and second to n-th channels are defined to be arranged with an interval of about 1 THz toward a longer wavelength side, the pumping lights having wavelengths corresponding to the first to n-th channels are multiplexed, and an pumping light having a wavelength spaced apart from the n-th channel by 2 THz or more toward the longer wavelength side is combined with the multiplexed light, thereby forming the pumping light source. The pumping lights having wavelengths corresponding to the channels other than (n-1)-th and (n-2)-th channels may be multiplexed, thereby forming the pumping light source. The pumping lights having wavelengths corresponding to the channels other than (n-2)-th and (n-3)-th channels may be multiplexed, thereby forming the pumping light source. | 06-16-2011 |
| 20110139626 | ELECTROLYTIC COPPER COATING, METHOD OF MANUFACTURING THE SAME, AND COPPER ELECTROLYTE FOR MANUFACTURING ELECTROLYTIC COPPER COATING - An object of the present invention is to provide an electrolytic copper coating that exhibits a bendability and flexibility equal to or better than those of rolled copper foil after the heat history in a circuit board fabrication process, especially after a heat history equivalent to the heat history applied when bonding with a polyimide film. The present invention provides an electrolytic copper coating and a method of manufacturing the same wherein, when performing heat treatment so that the LMP value shown in Equation 1 becomes 9000 or more, the result becomes a crystal distribution of crystal grains, having a maximum length of crystal grains after heat treatment of 10 μm or more, of 70% or more: | 06-16-2011 |
| 20110135261 | OPTICAL WAVEGUIDE, OPTICAL WAVEGUIDE MODULE AND METHOD FOR FORMING OPTICAL WAVEGUIDE - An optical waveguide comprising a core and a clad characterized in that a desired part is heated and transited to machining strain release state, the part transited to the machining strain release state is curved with a specified bending radius and transited to machining strain state. That part of the optical waveguide is heated to a temperature within a range between the bending point and softening point and transited to machining strain state. The optical waveguide is an optical fiber having the outer diameter not shorter than 50 μm. The optical waveguide has the outer diameter not shorter than ten times of the mode field diameter of the optical waveguide. The optical waveguide has a bending radius of 5.0 mm or less and difference equivalent of refractive index &Dgr; | 06-09-2011 |
| 20110123153 | ARRAYED WAVEGUIDE GRATING - An arrayed waveguide grating includes input waveguides, an input slab waveguide, n output waveguides, an output slab waveguide, and an arrayed waveguide. Gaps are formed in the output waveguides other than the output waveguides of both sides of an array of the output waveguides, respectively, such that loss increases toward the central side of the array. Sizes of the gaps in the output waveguides increase toward the central side of the array. | 05-26-2011 |
| 20110110622 | HYBRID INTEGRATED OPTICAL MODULE - The present invention provides a hybrid integrated optical module having a high coupling efficiency by suppressing a connection loss between waveguides. A hybrid integrated optical module according to an embodiment of the present invention is an optical module which integrates a semiconductor chip and a PLC chip. The semiconductor chip has a semiconductor waveguide and is mounted on a Si bench. The PLC chip includes a PLC substrate and an optical waveguide formed on the PLC substrate. An end face of the semiconductor chip protrudes from an end face of the Si bench toward the PLC chip side by a protrusion amount X. Gap adjustment (adjustment of a distance D) between the semiconductor waveguide and the optical waveguide becomes possible by setting a position where the end face of the semiconductor chip is brought into contact with an end face of the PLC chip to be a reference position (zero point). | 05-12-2011 |
| 20110100059 | SHEET GLASS AND METHOD FOR MANUFACTURING SHEET GLASS - A sheet glass that has a side surface with an average surface roughness equal to or less than 0.2 μm is provided. Furthermore, a method of manufacturing a sheet glass is provided that includes processing a base-material glass sheet to obtain a sheet glass that has a side surface with an average surface roughness equal to or less than 0.2 μm. Moreover, a method of manufacturing a sheet glass is provided that includes processing a base-material glass sheet so that an average surface roughness of a side surface becomes equal to or less than a predetermined value according to a section modulus of the sheet glass that is to be manufactured. | 05-05-2011 |
| 20110094269 | OPTICAL FIBER MANUFACTURING METHOD - An optical fiber manufacturing method comprises preparing first base materials each of which includes at least one core forming part to form a core and a cladding forming part to form a cladding; performing a first elongating to form second base materials by forming a first bundle by bundling two or more base materials including at least one of the first base materials having been prepared at the preparing and by thermally elongating the first bundle; and performing a second elongating at least once to form a second bundle by bundling two or more base materials including at least one of the second base materials and by thermally elongating the second bundle, wherein the second bundle is thermally elongated up until the point when the optical fiber is formed at the second elongating. | 04-28-2011 |
| 20110091176 | HOLEY FIBERS - A holey fiber with significantly large effective core area is provided. The holey fiber comprises a core portion and a cladding portion at the circumference of the core portion. The cladding portion has plurality of holes distributed to shape triangular lattices around the core portion; wherein d/Λ is less than or equal to 0.42, the diameter of the holey fiber is larger than or equal to 580 μm, an effective core area is larger than or equal to 15000 μm | 04-21-2011 |
| 20110091158 | CONNECTOR UNIT - Provided is a connector unit capable of surely positioning and cone ting a plurality of optical fiber plugs in a short time and easily releasing the connected state of the optical fiber connectors even if the quantity of the optical fiber connectors is increased. The connector unit ( | 04-21-2011 |
| 20110085761 | ARRAYED WAVEGUIDE GRATING AND METHOD OF MANUFACTURING ARRAYED WAVEGUIDE GRATING - An arrayed waveguide grating includes: at least one first waveguide; a first slab waveguide connected to the at least one first waveguide; a plurality of second waveguides; a second slab waveguide connected to the plurality of second waveguides; and an arrayed waveguide. The arrayed waveguide includes: M channel waveguides connected between the first slab waveguide and the second slab waveguide, wherein M is a natural number; and a phase correcting portion configured to provide a predetermined phase to at least a part of the M channel waveguides by one or both of a width and a length of the at least the part of the M channel waveguides being changed. | 04-14-2011 |
| 20110076854 | METHOD OF MANUFACTURING VERTICAL-CAVITY SURFACE EMITTING LASER - According to a method of manufacturing a vertical-cavity surface-emitting semiconductor laser element in accordance with the present invention, a process of wet etching is performed for a part that is oxidized in a layer of an AlGaAs ( | 03-31-2011 |
| 20110064351 | OPTICAL PHASE MODULATOR AND OPTICAL PHASE MODULATING DEVICE - The optical phase modulator of the present invention comprises: a main Mach-Zehnder interferometer having first and second main optical waveguide path arms, and whose initial phase difference in the used wavelength is π; a first sub Mach-Zehnder interferometer having first and second sub optical waveguide path arms that are formed in said first main optical waveguide path arm, and whose initial phase difference in the used wavelength is 0; and a second sub Mach-Zehnder interferometer having third and fourth sub optical waveguide path arms that are formed in said second main optical waveguide path arm, and whose initial phase difference in the used wavelength is 0. Of each of the main optical waveguide path arms and first through fourth sub optical waveguide path arms, at least the portions where high-frequency electrodes are formed is constructed using semiconductor waveguide paths, and are capable of reducing the effects of frequency chirping caused by an orthogonal component that occurs due to light absorption in the semiconductor. | 03-17-2011 |
| 20110064108 | METHOD OF MANUFACTURING VERTICAL-CAVITY SURFACE EMITTING LASER AND VERTICAL-CAVITY SURFACE EMITTING LASER ARRAY - A method of manufacturing a surface emitting laser element of a vertical cavity type in accordance with the present invention is characterized in that comprises the following steps of: applying a process of accumulations on a substrate, the process sequentially including accumulating a reflecting mirror of a multilayered film layer at a lower side thereof on to the substrate, and accumulating layers of a semiconductor as a plurality thereof on to the reflecting mirror of the multilayered film layer at the lower side thereof, that comprises an active layer and that further comprises a contact layer at a top layer thereof as well; forming a first layer of a dielectric substance as a process of a formation of the first layer of the dielectric substance at a part of regions on the contact layer; forming an electrode of an annular shape as a process of a formation of the electrode of the annular shape on the contact layer, that has an open part at a center thereof, in order to be arranged for the first layer of the dielectric substance at an inner side of the open part thereat; forming a second layer of a dielectric substance as a process of a formation of the second layer of the dielectric substance in order to cover the first layer of the dielectric substance and to cover a gap which is formed between the first layer of the dielectric substance and the electrode of the annular shape; and etching the layers of the semiconductor as a process of a formation of a mesa post that are accumulated thereon, thereby etching to be a shape of the mesa post with making use of the electrode of the annular shape to be as a mask therefor. | 03-17-2011 |
| 20110064107 | VERTICAL-CAVITY SURFACE EMITTING LASER - By making use of a vertical cavity surface emitting laser element ( | 03-17-2011 |
| 20110063850 | LIGHT BOX - A light box includes a point like light source, a light reflecting plate arranged around said point like light source and a light diffusion surface plate having light transmissive property and arranged to face said light reflecting plate. The light box can include a case having an opening formed in a direction of light and for housing at least said point like light source and said light reflecting plate inside. Additionally, a receiving concave portion is formed with said light reflecting plate, said point like light source is allocated inside said receiving concave portion, an injection angle of the light from said point like light source is 0°, and a brightness is less than or equal to 15000 cd/m | 03-17-2011 |
| 20110059236 | OPTICAL FIBER - The present invention provides an optical fiber superior in yellowing resistance. An optical fiber according to the present invention has a coating made from a UV curable resin formed on the outer surface of a bare optical glass fiber, and is characterized in that the coated material includes an unreacted photoinitiator in an amount of 2.4×10 | 03-10-2011 |
| 20110049529 | GaN-BASED SEMICONDUCTOR ELEMENT AND METHOD OF MANUFACTURING THE SAME - Provided is a GaN series semiconductor element, which is capable of obtaining an adequate normally-off characteristic, and a manufacturing method thereof. | 03-03-2011 |
| 20110049334 | OPTICAL MODULE - An optical module transmits optical signals through a plurality of optical fibers in parallel. The optical module includes a substrate including an electrode pattern, a plurality of optical elements mounted on the electrode pattern of the substrate, and an electronic device mounted on the electrode pattern of the substrate and electrically connected to the optical elements. The optical elements and the electronic device are arranged on the substrate close to each other such that lengths of a plurality of transmission lines each transmitting a signal between each of the optical elements and the electronic device are minimized. | 03-03-2011 |
| 20110044586 | OPTICAL CONNECTOR - An optical connector | 02-24-2011 |
| 20110041986 | MICRO-REACTOR AND METHOD OF MANUFACTURING THE SAME - A structure of a microreactor includes a joined body having a pair of substrates joined together, a flow path formed by a microchannel portion formed on a joining surface of at least one of the substrates, and a catalyst carrying member disposed in the flow path. In the production of such a microreactor, the catalyst carrying member is produced separately from formation of the joined body and the catalyst carrying member is disposed in the flow path at the time of forming the joined body. | 02-24-2011 |
| 20110026890 | HOLEY FIBERS - A holey fiber with significantly large effective core area is provided. | 02-03-2011 |
| 20110014428 | METHOD OF MANUFACTURING PLATE MEMBER AND PLATE MEMBER - There is provided a method of manufacturing a plate member including preparing a base plate member having main faces, and performing etching by immersing at least part of the base plate member in an etching liquid while controlling a lowering speed of a liquid surface of the etching liquid on the main faces of the base plate member to a desired lowering speed. | 01-20-2011 |
| 20110011956 | CLEANING METHOD OF COLORING DEVICE OF OPTICAL FIBER, AND COLORING DEVICE OF OPTICAL FIBER - A cleaning method comprises first cleaning which includes supplying a cleaning-liquid to the coloring device from the optical fiber passing hole of the nipple and the ink supply opening, and discharging the cleaning-liquid from the cleaning-liquid discharge opening, and second cleaning which includes supplying a cleaning-liquid to the coloring device from the optical fiber passing hole of the nipple and the ink supply opening, and discharging the cleaning-liquid from the optical fiber passing hole of the second die. | 01-20-2011 |
| 20110008002 | ARRAYED-WAVEGUIDE-GRATING-TYPE OPTICAL MULTIPLEXER/DEMULTIPLEXER - A multiplexer/demultiplexer includes: a waveguide chip including a first chip and a second chip that are divided by a plane and obtained by cutting, together with a substrate, in a direction crossing an optical axis, a first slab waveguide of an AWG including the first slab waveguide and a second slab waveguide that are formed on the substrate; a first base to which the first chip is fixed; a second base separated from the first base and to which the second chip is fixed; and a member that has one end fixed to the first base or chip and another end fixed to the second base or chip, in a state in which cut surfaces of the first and second chips face each other, and that is configured to move the first base and the second base relatively to each other along the plane by expanding/contracting when temperature changes. | 01-13-2011 |
| 20110007385 | OPTICAL FIBER FOR OPTICAL AMPLIFICATION, OPTICAL FIBER AMPLIFIER, AND OPTICAL FIBER LASER - An optical fiber for optical amplification has: a core portion doped with at least erbium and aluminum; a cladding portion formed around the core portion and having a refractive index smaller than that of the core portion; a peak value of absorption coefficient of 35 dB/m or greater at a wavelength around 1530 nanometers; normal dispersion characteristics and an effective core area of 20 μm | 01-13-2011 |
| 20100326139 | OPTICAL FIBER PREFORM MANUFACTURING METHOD - An optical fiber preform manufacturing method includes: supporting a drilling jig in a radial direction of a preform that is cylinder-shaped; moving the drilling jig in a longitudinal direction of the preform; and forming a plurality of slits each extending in the longitudinal direction and each directed from an outer side of the preform toward a center the preform, and a plurality of holes each extending in the longitudinal direction and each connecting with an end of one of the plurality of slits in a depth direction of the one of the plurality of slits. | 12-30-2010 |
| 20100326038 | HIGH-STRENGTH CABLE - A high-strength cable is a high-strength cable that has a twisted layer | 12-30-2010 |
| 20100319406 | APPARATUS FOR AND METHOD OF PROCESSING GLASS OPTICAL FIBER, METHOD OF MANUFACTURING AND METHOD OF DRAWING OPTICAL FIBER - An apparatus includes: an introducer to introduce a glass optical fiber that has passed a pulling mechanism pulling, to draw the glass optical fiber, one end of an optical fiber preform that has been fused by heating; a shredder including a casing connected to the introducer and a shredding mechanism to shred the glass optical fiber introduced by the introducer in the casing into glass optical-fiber pieces; a pipe connected to the casing of the shredder and to carry the glass optical-fiber pieces; and a suction unit connected to the pipe and to suction the glass optical-fiber pieces via the pipe. | 12-23-2010 |
| 20100307814 | ELECTRIC CONNECTION BOX - An electric connection box for an automobile effectively prevents entry of water into the box and allows water entered the box to be easily discharged. The electric connection box has a base block ( | 12-09-2010 |
| 20100303410 | ARRAYED WAVEGUIDE GRATING - An arrayed waveguide grating includes: at least one input waveguide; an input slab waveguide connected to the input waveguide; a plurality of output waveguides; an output slab waveguide connected to the output waveguides; and an arrayed waveguide. The arrayed waveguide includes: M channel waveguides connected between the input slab waveguide and the output slab waveguide; and a phase correcting portion configured to provide a predetermined phase to at least a part of the M channel waveguides by a form of the at least the part of the M channel waveguides being changed. | 12-02-2010 |
| 20100303102 | OPTICAL FIBER COMPONENT AND OPTICAL MODULE USING THE SAME - An optical fiber component comprises an optical fiber that transmits light; and a coreless fiber that is connected to the end surface of the optical fiber and prevents foreign matter from adhering to the end surface of the optical fiber. The optical fiber and the coreless fiber are connected by fusing one end surface of the coreless fiber to the end surface of the optical fiber. The core section on the end surface of the optical fiber is no longer exposed to the air. Moreover, the power density of light that is input at the core of the optical fiber is greatly reduced more than when there is no coreless fiber, so it is possible to prevent compounds of C, H and O from adhering to the core of the optical fiber. | 12-02-2010 |
| 20100300151 | GLASS PREFORM MANUFACTURING METHOD - A glass preform manufacturing method includes: generating glass fine particles by hydrolyzing a source gas in an oxyhydrogen flame; depositing the generated glass fine particles to form a torous glass preform; immersing the porous glass preform in an additive solution including an additive solvent in which a compound containing a desired additive is dissolved to impregnate the additive solution into the porous glass preform; first replacing of replacing the additive solvent remaining in the porous glass preform with the replacement solvent by immersing the porous glass preform in which the additive solution remains in a replacement solvent in which a solubility of the additive is lower than that in the additive solvent and having miscibility with the additive solvent; drying the porous glass preform after the first replacing; and sintering the dried porous glass preform to transparently vitrify the dried porous glass preform. | 12-02-2010 |
| 20100296786 | OPTICAL FIBERS - An optical fiber suitable for high-capacity transmission having a large effective core area, a low bending loss, and capable of single mode operation at 1550 nm is provided. The optical fiber | 11-25-2010 |
| 20100296784 | MULTI-CORE OPTICAL FIBER - A multi-core optical fiber includes: a plurality of core portions; and a cladding portion positioned around the plurality of core portions and including a marker for identifying a position of a specific one of the plurality of core portions. | 11-25-2010 |
| 20100294002 | OPTICAL FIBER PREFORM MANUFACTURING METHOD - The present invention provides a method for manufacturing an optical fiber preform, which provides an optical fiber with stable transmission loss characteristics, and improves manufacturing efficiency. The method for manufacturing an optical fiber preform comprises dehydrating the optical fiber soot preform by lowering the optical fiber soot preform within the muffle tube and passing through a heating region, pulling up the dehydrated optical fiber soot preform to the predetermined position, and sintering the optical fiber soot preform by lowering the optical fiber soot preform again within the muffle tube and passing through the heating region where temperature of the heating region is higher than temperature of the heating region in dehydrating; wherein A≦B is satisfied where A is pull-up speed (mm/minute) of the optical fiber soot preform during the pulling up and B is gas flow rate (mm/minute) within the muffle tube at room temperature during the pulling up. Furthermore, 1.5×A≦B is satisfied. | 11-25-2010 |
| 20100290750 | MULTI-CORE OPTICAL FIBER - A multi-core optical fiber includes: a plurality of core portions; and a cladding portion positioned around the plurality of core portions and including, in a cross section of the cladding portion, a flat portion in at least a part of an outer periphery of the cladding portion and a remaining portion of the outer periphery that is circular, the cross section being perpendicular to a longitudinal direction of the cladding portion. | 11-18-2010 |
| 20100278483 | ATHERMAL AWG MODULE - An athermal AWG module | 11-04-2010 |
| 20100276831 | COLD-SHRINKABLE TYPE RUBBER INSULATION SLEEVE AND METHOD OF MANUFACTURING - A cold-shrinkable type rubber insulation sleeve includes a reinforced insulation sleeve, a semiconductive stress-relief cone, an internal semiconductive layer, and an external semiconductive layer. The reinforced insulation sleeve, the semiconductive stress-relief cone, and the internal semiconductive layer are formed by molding, and the external semiconductive layer is formed by coating. | 11-04-2010 |
| 20100276184 | MULTILAYER PRINTED BOARD AND METHOD FOR MANUFACTURING THE SAME - Provided is a multilayer printed board | 11-04-2010 |
| 20100271690 | VERTICAL CAVITY SURFACE EMITTING LASER ELEMENT, VERTICAL CAVITY SURFACE EMITTING LASER ARRAY ELEMENT, VERTICAL CAVITY SURFACE EMITTING LASER DEVICE, LIGHT SOURCE DEVICE, AND OPTICAL MODULE - Included are: an active layer provided between an upper multilayer film reflecting mirror and a lower multilayer film reflecting mirror formed on a GaAs substrate and formed of a periodic structure of a low-refractive-index layer formed of Al | 10-28-2010 |
| 20100266257 | OPTICAL FIBERS - An optical fiber, which is less likely to increase its transmission loss even when it is exposed to a high-humidity environment or immersed in water, is provided. The optical fiber comprises a glass fiber and at least two coating layers (a soft layer and a hard layer) coated at the circumference of the glass fiber, wherein the limit-adhesion strength between the glass fiber and the coating layer under a hot and humid environment is 0.50N/10 mm or more. Preferably, the glass-transition temperature of the hard layer is less than 90° C. | 10-21-2010 |
| 20100247055 | OPTICAL FIBER HOLDING APPARATUS - An optical fiber holding apparatus in accordance with the present invention is characterized in that the same comprises a surface in order to hold an optical fiber which is to be a state of which is rolled up so as not to overlap with each other, wherein at least the surface is formed of a thermo conductive molding body which has a thermal conductivity to be higher than or equal to 0.5 W/mK, and which has an Asker C hardness to be between twenty and fifty. Or, the same comprises a peripheral surface in order to roll up and hold an optical fiber, wherein at least the peripheral surface is formed of a thermo conductive molding body which has the thermal conductivity to be higher than or equal to 0.5 W/mK, and which has the Asker C hardness to be between twenty and fifty. Moreover, it is desirable for the thermo conductive molding body to have a compressive strength of which a peak value is between ten and thirty N/cm | 09-30-2010 |
| 20100246614 | WAVELENGTH VARIABLE LIGHT SOURCE SYSTEM - There is provided a wavelength variable light source system capable of changing wavelength and intensity of output signal light and of improving preset accuracy and stability of the wavelength and strength of the output signal light. The system determines the both or either one of a target value for controlling wavelength and a target value for controlling intensity of output signal light of a wavelength variable light source by correlating a combination of the target wavelength and the target light output intensity specified from a higher-level device and controls operation states of the wavelength variable light source so that output values of monitoring circuit s for monitoring the operation state of the wavelength variable light source converge to the target values. | 09-30-2010 |
| 20100246613 | SEMICONDUCTOR LASER, METHOD FOR GENERATING LASER BEAM AND METHOD FOR REDUCING A SPECTRAL LINE-WIDTH OF LASER BEAM - A semiconductor laser is provided capable of generating very narrow laser beams and having stable characteristics, a method for generating the laser beams and a method for reducing a spectral line-width of the laser beams. The semiconductor laser includes a semiconductor active layer, a photonic crystal optical waveguide forming a periodic structure of two-dimensional refractive index within a plane perpendicular to a semiconductor laminate direction directly or indirectly connected to the semiconductor active layer; and an optical cavity that contains the semiconductor active layer and the photonic crystal optical waveguide and oscillates light that is generated from the semiconductor active layer and is guided through the photonic crystal optical waveguide as laser. | 09-30-2010 |
| 20100245987 | SEMICONDUCTOR OPTICAL AMPLIFIER - It is desirable to provide a semiconductor optical amplifier from which it becomes able to obtain a higher output power. A semiconductor optical amplifier in comprises an active wave guiding layer which comprises a passive core region that is formed of a semiconductor, and active cladding regions that are located at both sides of the passive core region and each of that is comprised of an active layer which is formed of a semiconductor and which has an index of refraction to be lower than that of the passive core region, wherein a light is wave guided with being amplified in the active wave guiding layer. Moreover, it is desirable for the active wave guiding layer to be formed of a compound semiconductor, and to be formed by integrating the passive core region and the active cladding regions to be monolithic on to a substrate that is formed of a compound semiconductor by making use of a process of a butt joint growth. | 09-30-2010 |
| 20100244101 | SEMICONDUCTOR DEVICE AND METHOD FOR MANUFACTURING THE SAME - There is provided a method for fabricating a semiconductor device capable of setting carbon concentration within crystal to a desirable value while improving electron mobility. The carbon concentration within a buffer layer is controlled by introducing material gas of hydrocarbon or organic compounds containing carbon such as propane as a dopant in forming the buffer layer by introducing trimethylgallium (TMGa) and ammonium (NH | 09-30-2010 |
| 20100244097 | FIELD EFFECT TRANSISTOR - Provided is a GaN based field effect transistor that is capable of normally-off operation, high breakdown voltage and large current. A body electrode | 09-30-2010 |
| 20100244044 | GaN-BASED FIELD EFFECT TRANSISTOR - The invention provides a GaN-based compound semiconductor device that is operable with low ON-resistance and high withstanding voltage. The GaN-based field effect transistor includes a buffer layer formed on a substrate, a channel layer, a drift layer formed on the channel layer, source and drain electrodes formed on the drift layer, an insulating film formed on the inner surface of a recess form in the drift layer and on the surface of the drift layer and a gate electrode formed on the insulating film and having a field plate portion. The drift layer has a reducing surface field region composed of n-type GaN-based compound semiconductor whose sheet carrier density is more than 5×10 | 09-30-2010 |
| 20100239217 | OPTICAL FIBER AND OPTICAL WAVEGUIDE - An optical fiber includes a core region having a first refractive index and a cladding region having a second refractive index lower than the first refractive index on an outer circumference of the core region. The cladding region includes four holes formed to have a four-fold rotational symmetry with respect to a center axis around the core region in a longitudinal direction, such that a zero-dispersion wavelength is 900 nm to 1150 nm and a cutoff wavelength is equal to or shorter than 950 nm. | 09-23-2010 |
| 20100233506 | SILVER-COATED COMPOSITE MATERIAL FOR MOVABLE CONTACT AND METHOD FOR MANUFACTURING THE SAME - A silver-coated composite material for movable contact includes a base material composed of an alloy whose main component is iron or nickel, an under layer which is formed at least on part of the surface of the base material and which is composed of any one of nickel, cobalt, nickel alloy and cobalt alloy, an intermediate layer which is formed on the under layer and which is composed of copper or copper alloy and an outermost layer which is formed on the intermediate layer and which is composed of silver or silver alloy, and wherein a total thickness of the under layer and the intermediate layer falls within a range more than 0.025 μm and less than 0.20 μm. | 09-16-2010 |
| 20100232465 | SEMICONDUCTOR LIGHT EMITTING ELEMENT AND MANUFACTURING METHOD THEREOF - A semiconductor light emitting element, comprises: an active layer; a first electrode and second electrode that inject current to the active layer; a semiconductor layer between the active layer and the first electrode; and a dielectric layer that is provided on the semiconductor layer and through which light from the active layer passes; wherein the first electrode is provided on the semiconductor layer, has an opening through which light from the active layer passes, and comprises a first electrode layer that comes in contact with and is provided on the semiconductor layer, and a second electrode layer that is provided on the first electrode layer, with the first electrode layer having less reactivity with the semiconductor layer than the second electrode layer; and the dielectric layer is provided inside the opening such that the end section on the opening side of the first electrode layer extends from the top of the semiconductor layer to the top of the dielectric layer. | 09-16-2010 |
| 20100232464 | MANUFACTURING METHOD OF SEMICONDUCTOR DEVICE, SEMICONDUCTOR DEVICE, COMMUNICATION APPARATUS, AND SEMICONDUCTOR LASER - A method of manufacturing a semiconductor device including a semiconductor layer and a dielectric layer deposited on the semiconductor layer, including: forming the semiconductor layer; performing a surface treatment for removing a residual carbon compound, on a surface of the semiconductor layer formed; forming a dielectric film under a depositing condition corresponding to a surface state after the surface treatment, on at least a part of the surface of the semiconductor layer on which the surface treatment has been performed; and changing a crystalline state of at least a partial region of the semiconductor layer by performing a heat treatment on the semiconductor layer on which the dielectric film has been formed. | 09-16-2010 |
| 20100230128 | DRAIN STRUCTURE OF ELECTRIC CONNECTION BOX - Drain structure of an electric connection box is provided that is capable of preventing penetration of water with simplicity. According to the drain structure of the electric connection box, since a pair of engaging leg portions of a waterproof lid is engaged in a peripheral part of a communication hole of the drain portion and a lid portion covers the upper part of the water discharging hole, the water that penetrates through to the inside of the electric connection box through the communication hole and water discharging hole of the drain portion can be dammed in use of lid portion of the waterproof lid and can be prevented from gushing into the electric connection box. As a result, since it is possible to prevent the terminal portion of a wire such as a wire harness or the like, which is arranged to run from moistening with the water, penetration of water can be surely prevented. Furthermore, since the waterproof lid is formed apart from the lower case or lower cover and is applicable to the conventional structure, the whole structure can be simple and gives freedom to design the electric connection box. | 09-16-2010 |
| 20100216333 | CABLE CONNECTING MEMBER FOR USE IN COLD CLIMATES - There is provided a cable connecting member for use in cold climates which is capable of easily applying a common rubber insulating tube to several types of cables having different outside diameters and achieving high insulating performance without decreasing mechanical strength even in cold climates where the environmental temperature is low. An end of a cable is housed in a rubber insulating tube, and electrical insulation from the cable is enhanced. A rubber spacer is inserted between the rubber insulating tube and the end of the cable. At a temperature at which a elongation modulus of the rubber insulating tube increases three or more times as high as the elongation modulus of the rubber insulating tube at room temperature, a elongation modulus of the rubber spacer at such temperature is less than three times as high as the elongation modulus of the rubber spacer at room temperature. | 08-26-2010 |
| 20100215362 | CUSTOMER PREMISES OPTICAL NETWORK UNIT AND OPTICAL TRANSMISSION SYSTEM - An optical network unit according to the present invention is provided as comprising a configuration that component units built therein are grouped for at least two sheets of substrate modules and arranged thereat. There are provided individual embodiments: (a) arranging an L2 layer and a part of the component unit of an L1 layer at a first substrate module, meanwhile, arranging the left part of the component unit of the L1 layer at a second substrate module; (b) arranging the component units of the L1 layer and of the L2 layer at the first substrate module and the second substrate module individually by grouping therefor; and (c) arranging the component units of the L2 layer and of the L1 layer at the first substrate module and the second substrate module respectively. | 08-26-2010 |
| 20100215318 | OPTICAL FIBER CUTTING BLADE, OPTICAL FIBER CUTTING DEVICE AND METHOD OF CUTTING OFF THE OPTICAL FIBER, AS WELL AS COMPONENT FOR PEELING THE COATING AND BREAKING THE OPTICAL FIBER AND METHOD OF PEELING THE COATING AND BREAKING THE OPTICAL FIBER - A component for peeling the coating and breaking the optical fiber, which comprises the first member made of resin material including a groove portion enabling to receive a coated optical fiber, an optical fiber cutting blade and a coat removing blade integrally formed within the groove portion, and a breaking portion in an intermediate portion, and the second member made of resin material including a groove portion corresponding to the groove portion in the first member enabling to receive a coated optical fiber, a coat removing blade corresponding to the coat removing blade in the first member, and a breaking portion in an intermediate portion corresponding to the breaking portion in the first member. | 08-26-2010 |
| 20100215072 | SEMICONDUCTOR DEVICE AND OPTICAL MODULE - A semiconductor laser element | 08-26-2010 |
| 20100213577 | SEMICONDUCTOR ELECTRONIC DEVICE AND PROCESS OF MANUFACTURING THE SAME - A semiconductor electronic device comprises a substrate; a buffer layer that comprises composite laminations of which a first semiconductor layer, that is formed of a compound semiconductor of a nitride system, that has a lattice constant to be as smaller than that of such the substrate, and that has a coefficient of thermal expansion to be as larger than that of such the substrate, and a second semiconductor layer that is formed of a compound semiconductor of a nitride system are formed as alternately on to such the substrate; a semiconductor operation layer that is formed of a compound semiconductor of a nitride system and that is formed on to such the buffer layer; and a dislocation reduction layer, which comprises a lower layer region and an upper layer region that are formed at any location at an inner side of such the buffer layer and that comprise an interface of a concave and convex shape therebetween, at which a threading dislocation that draws from such the lower layer region toward such the upper layer region is bending at such the interface, wherein such the second semiconductor layer is comprised of a laminated layers as alternately of a third semiconductor layer that has a lattice constant to be as smaller than that of such the substrate and that has a coefficient of thermal expansion to be as larger than that of such the substrate, and of a fourth semiconductor layer that has a lattice constant to be as smaller than that of such the third semiconductor layer and that has a coefficient of thermal expansion to be as larger than that of such the substrate, and an average of such the lattice constants in the second semiconductor layer is to be smaller than that of such the first semiconductor layer, and an average of such the coefficients of thermal expansion in the second semiconductor layer is to be as larger than that of such the substrate. | 08-26-2010 |
| 20100212364 | OPTICAL FIBER MANUFACTURING METHODS - An optical fiber manufacturing method, which recycles cooling gas with a simple system (less modification from a conventional device) is provided. The method comprises the steps of heating and melting an optical fiber preform, cooling the glass fiber obtained from the preform using a cooling device, and coating the cooled glass fiber with a coating material. During the cooling step, cooling gas is supplied from the bottom portion of the cooling device | 08-26-2010 |
| 20100210080 | METHOD OF MANUFACTURING GAN-BASED TRANSISTORS - A method of manufacturing a GaN-based field effect transistor is provided by which a lower resistance and a higher breakdown voltage are obtained and which is less affected by a current collapse. A method of manufacturing the GaN-based field effect transistor(s) can comprise performing an epitaxial growth of an AlN layer ( | 08-19-2010 |
| 20100209060 | OPTICAL PULSE RESHAPING DEVICE, OPTICAL PULSE LIGHT SOURCE, SUPER-CONTINUUM LIGHT GENERATOR AND METHOD FOR SUPER-CONTINUUM LIGHT GENERATION - Regarding an optical pulse reshaping device of CPF type, there are subjects to reduce the number of stages by enhancing a compression efficiency as extremely higher for one stage of the CPF with maintaining a quality of an output pulse as high, and to be able to improve a degree of multiplexing by obtaining an output pulse having a Gaussian function for both of a time waveform therefor and a frequency waveform therefor. By using a normal dispersion HNLF in place of a zero dispersion HNLF, which configures the conventional CPF, it becomes able to overcome the above mentioned subjects. Moreover, it becomes able to reduce the number of fusion splice for a fiber, and to reduce a propagation loss of the CPF, by enhancing the compression efficiency as higher. | 08-19-2010 |
| 20100202742 | HOLEY FIBER - A holey fiber has: a core region at a center of the holey fiber; a cladding region around the core region; a plurality of holes included in the cladding region, formed in layers around the core region, arranged to form a triangular lattice having a lattice constant Λ of 2 micrometers to 5 micrometers, and each having a diameter of d micrometers; and a wavelength dispersion value of −10 ps/nm/km to 10 ps/nm/km at a wavelength of 1050 nanometers when d/Λ is 0.3 to 0.47. | 08-12-2010 |
| 20100202739 | FERRULE TRANSFER METHOD AND FERRULE HOLDER - Other end of a built-in optical fiber of a ferrule with one end of the built-in optical fiber matched with a splicing end surface and other end of the built-in optical fiber protruded from an end portion opposite to the splicing end surface and one end of a splicing optical fiber to be spliced are placed is fusion-sliced with the one end of the splicing optical fiber. After that, the ferrule is held by inserting a cylindrical portion of the ferrule into a holding unit of a ferrule holder from the splicing end surface. The ferrule is transferred while holding a stem extended on an opposite side of the holding unit of the ferrule holder and the splicing optical fiber. | 08-12-2010 |
| 20100197164 | CONNECTION STRUCTURE OF CONNECTING TERMINAL AND METHOD OF CONNECTING THE SAME - An objective is to provide a connection structure of a connecting terminal by which it becomes able to perform a connection of any of pieces for piercing as assuredly without being bended that is piercing through an electrically conductive flat square body, and to provide a method of connecting such the terminal. A unit for connecting a pierced terminal ( | 08-05-2010 |
| 20100196010 | OPTICAL TRANSMISSION SYSTEM - An optical transmission system is provided. The optical transmission system includes a user side optical repeater device, a central office side optical repeater device, and wavelength multiplexing and wavelength de-multiplexing functions. The user side optical repeater device is to be connected with a user side optical network unit, transmits data in two ways, and is used for wavelength division multiplexing. The central office side optical repeater device is to be connected with a central office side optical line terminal, transmits data in two ways, and is used for wavelength division multiplexing. The wavelength multiplexing and wavelength de-multiplexing functions are used for relaying between the user side optical repeater device and the central office side optical repeater device. | 08-05-2010 |
| 20100195685 | SEMICONDUCTOR LASER ELEMENT AND METHOD OF MANUFACTURING SEMICONDUCTOR LASER ELEMENT - A semiconductor laser element includes: a window region including a disordered portion formed by diffusion of a group-III vacancy, the diffusion promoted by providing on the window region a promoting film that absorbs a predetermined atom; a non-window region including an active layer of a quantum well structure; and a difference equal to or larger than 50 meV between an energy band gap in the window region and an energy band gap in the non-window region. | 08-05-2010 |
| 20100193216 | POWER SUPPLY APPARATUS FOR SLIDING DOOR - A power supply apparatus for sliding door includes a flat cable for electrically connecting devices on a side of vehicle body to the devices on a side of a sliding door mounted on the vehicle body so as to be able to be slid, a vehicle body side fixing portion for fixing the flat cable on the vehicle body; and a door side fixing portion for fixing the flat cable on the sliding door, wherein the flat cable is extracted from the vehicle body side fixing portion and the door side fixing portion in the substantially same direction which is substantially parallel to the sliding directions of the sliding door, and the width direction of the flat cable is maintained to be substantially vertical. | 08-05-2010 |
| 20100186229 | METHOD FOR CONNECTING CONNECTOR TERMINAL - A method is provided for firmly connecting a connector terminal to a flat conductor. This is a method for electrically connecting the pierce terminal | 07-29-2010 |
| 20100166429 | CUSTOMER PREMISES OPTICAL NETWORK UNIT - There is provided a customer premises optical network unit (ONU) capable of reading management signals and of outputting data through an external node by using I | 07-01-2010 |
| 20100160479 | METHOD OF PRODUCING MATERIAL - A material producing method includes: generating singlet oxygen by irradiating light to an oxygen molecule that has penetrated into a material or that is near a surface of the material; and producing a desired material by breaking a bond in a molecular structure in the material with the generated singlet oxygen to cause a polymerization reaction or a substitution reaction to change a molecular weight of the material. | 06-24-2010 |
| 20100150507 | HOLEY FIBER - A holey fiber includes a core portion and a cladding portion positioned around a periphery of the core portion. The cladding portion includes 12 to 36 holes that are arranged circularly at a radius of 36 to 48 micrometers around a center of the core portion and that each have a hole diameter of 2.0 to 11.0 micrometers. At a wavelength of 1064 nanometers the holey fiber substantially performs a single-mode operation and has an effective core area equal to or greater than 1500 μm | 06-17-2010 |
| 20100148184 | GAN-BASED FIELD EFFECT TRANSISTOR - A GaN-based field effect transistor (MOSFET) is comprised of a channel layer comprised of p-type GaN, an electron supply layer, a surface layer having band gap energy smaller than that of said electron supply layer, sequentially laminated on a substrate, and recess section is formed by removing a part of the drift layer, the electron supply layer, and the surface layer down to a depth that reaches to the channel layer. A source electrode and a drain electrode are formed so that the recess section positions between them, a gate insulation film is formed on the surface layer and on inner-surface of the recess section including the channel layer, and a gate electrode is formed on the gate insulating film in the recess section. | 06-17-2010 |
| 20100142900 | SSC CHIP, FIBER ARRAY ATTACHED WITH SSC, PLC MODULE ATTACHED WITH SSC AND METHOD FOR MANUFACTURING SSC - There is provided a SSC chip whose yield may be improved and whose processing steps may be simplified as compare to those of a prior art PLC chip having a light waveguide circuit to which a spot-size converter (SSC) is added, a fiber array attached with the SSC chip, a PLC module attached with the SSC chip and a method for manufacturing the SSC chip. The SSC chip has four spot-size converters and is fabricated separately from a PLC chip. Each SSC has a straight waveguide having the same core width and height with an end of an input/output waveguide of the PLC chip, a horizontally tapered waveguide in which the core width is enlarged in a tapered shape in the horizontal direction from the core width of the straight waveguide, a vertically tapered waveguide in which the core height is enlarged in a tapered shape in the vertical direction from the core height of the horizontally tapered waveguide and a spot-size enlarged portion whose core width and core height are both enlarged. Because it is unnecessary to fabricate the SSC at the end of the input/output waveguide of the PLC chip, a yield of the PLC chip may be improved. | 06-10-2010 |
| 20100135628 | HOLEY FIBER - A holey fiber has at least: a core portion positioned at a center of the holey fiber; a cladding portion positioned around the core portion and including holes that are formed in layers around the core portion and that form a triangular lattice; d/Λ in a range of 0.43±0.03; Λ of 20 to 24 micrometers; a single-mode operation demonstrated at a wavelength of 1550 nanometers; and an effective core area equal to or larger than 500 μm | 06-03-2010 |
| 20100127275 | GAN-BASED FIELD EFFECT TRANSISTOR AND METHOD OF MANUFACTURING THE SAME - A GaN-based field effect transistor | 05-27-2010 |
| 20100119198 | COATED OPTICAL FIBERS - A coated optical fiber of the present invention comprises a glass fiber coated by at least two coating layers (a soft layer and a hard layer), wherein the glass surface of the glass fiber, where the at least two coating layers of the optical fiber are removed, has a peak intensity ratio of 0.6 or more in C | 05-13-2010 |
| 20100117146 | SEMICONDUCTOR DEVICE AND METHOD FOR FABRICATING THE SAME - There is provided a semiconductor device and a method for fabricating the same whose withstanding characteristic may be enhanced and whose ON resistance may be reduced. A MIS-type HEMT includes a carrier traveling layer made of a group-III nitride semiconductor and formed on a supporting substrate, a carrier supplying layer made of a group-III nitride semiconductor and formed on the carrier traveling layer, source and drain electrodes formed on the carrier supplying layer, insulating films formed on the carrier supplying layer and a gate electrode formed on the insulating films. The insulating film is formed in a region interposed between the source and drain electrodes and has a trench whose cross-section is inverted trapezoidal and whose upper opening is wider than a bottom thereof. The gate electrode is formed at least from the bottom of the trench onto the insulating films on the side of the drain electrode. | 05-13-2010 |
| 20100086270 | TIGHT-BUFFERED OPTICAL FIBERS AND OPTICAL FIBER CABLES - An optical fiber cable and a tight-buffered optical fiber which suppress an increase in transmission loss in a humid and hot environment and have good manufacturability are disclosed. The tight-buffered optical fiber of the present invention comprises a glass fiber surrounded by a first coating layer and a second coating layer, the second coating layer comprising two or more layers; wherein a pull-out force is 15N/20 mm or less in at least one pair of layers between the first coating layer and the second coating layer, or between any two layers of the second coating layer. | 04-08-2010 |
| 20100078678 | SEMICONDUCTOR ELECTRONIC DEVICE AND METHOD OF MANUFACTURING THE SAME - A semiconductor electronic device comprises a substrate; a buffer layer formed on said substrate, having two or more layers of composite layers in which a first semiconductor layer comprising nitride based compound semiconductor having smaller lattice constant and greater coefficient of thermal expansion than the substrate and a second semiconductor layer comprising nitride based compound semiconductor having smaller lattice constant and greater coefficient of thermal expansion than the first semiconductor layer are alternately laminated; a semiconductor operating layer comprising nitride based compound semiconductor formed on said buffer layer; a dislocation reducing layer comprising nitride based compound semiconductor, formed in a location between a location directly under said buffer layer and inner area of said semiconductor operating layer, and comprising a lower layer area and an upper layer area each having an uneven boundary surface, wherein threading dislocation extending from the lower layer area to the upper layer area is bent at said boundary surface. | 04-01-2010 |
| 20100073760 | DELAY-LINE DEMODULATOR - A delay-line demodulator for demodulating a differential quadrature phase shift keying (DQPSK) signal is provided. The demodulator includes two Mach-Zehnder interferometers individually comprising two waveguides having different lengths therebetween and through which a light signal branched from the DQPSK signal propagates, respectively. A phase of the light signal propagating at one of the waveguides is delayed as compared to a phase of the light signal propagating at another one of the waveguides, wherein a divergence amount of polarization is adjusted by driving sets of heaters that are facing each other and sandwiching a half wavelength plate therebetween. | 03-25-2010 |
| 20100054742 | MULTI-CORE HOLEY FIBER AND OPTICAL TRANSMISSION SYSTEM - A multi-core holey fiber with suppression of crosstalk deterioration among transmitted optical signals in a plurality of cores, and an optical transmission system using the fiber are disclosed. The multi-core holey fiber comprises a plurality of cores arranged separately from each other, and a cladding surrounding the plurality of cores wherein the cladding has plurality of holes arranged in a triangular lattice shape to create hole layers around the plurality of cores. Additionally, d/Λ is not more than 0.5, where Λ [μm] is lattice constant of the triangular lattice, d [μm] is diameter of each of the holes; a distance between adjacent cores is equivalent to not less than six hole layers; the cores arranged farthest from the center of the multi-core holey fiber is surrounded by not less three hole layers; and the sum of the coupling coefficients between the adjacent cores is not more than 1.6×10 | 03-04-2010 |
| 20100043497 | OPTICAL FIBER FOR WDM SYSTEM AND MANUFACTURING METHOD THEREOF - An optical fiber having a length of 1 km or more with average transmission loss in a wavelength band of 1383 nm being less than average transmission loss in a wavelength band of 1310 nm, wherein a maximum value of any 1 km section loss in the wavelength band of 1383 nm does not exceed the average transmission loss by 0.03 dB/km or more. | 02-25-2010 |
| 20100008674 | SURFACE EMITTING LASER DEVICE - To provide a surface emitting laser device including a substrate; an optical resonator arranged on the substrate, the optical resonator including a lower multilayer reflector and an upper multilayer reflector; a strained active layer arranged in the resonator, the strained active layer having a multiple quantum well structure formed with a quantum well layer and a barrier layer; and a current confinement layer arranged on an upper side of the strained active layer, the current confinement layer including a selectively oxidized portion, where the current confinement layer is arranged at a position where a strain in the selectively oxidized portion influences the strained active layer. | 01-14-2010 |
| 20090324242 | OPTICAL TRANSMISSION SYSTEM AND MULTI-CORE OPTICAL FIBER - An optical transmission system includes an optical transmitting unit that outputs at least one optical signal having a wavelength included in an operation wavelength band and a holey fiber that is connected to the optical transmitting unit. The holey fiber includes a core and a cladding formed around the core. The cladding includes a plurality of holes formed around the core in a triangular lattice shape. The holey fiber transmits the optical signal in a single mode. A bending loss of the holey fiber is equal to or less than 5 dB/m at a wavelength within the operation wavelength band when the holey fiber is wound at a diameter of 20 millimeters. | 12-31-2009 |
| 20090097101 | DELAY-LINE DEMODULATOR - Problem to be Solved To provide a delay-line demodulator of which the divergence amount of polarization is reduced. | 04-16-2009 |
| 20090085827 | ANTENNA INSTALLED ON RADAR - Disclosed is an antenna for a radar device which is available for angle measuring in a wide angle for both of the right and the left directions from a travelling direction of a vehicle. | 04-02-2009 |
| 20090080845 | PHOTONIC BANDGAP FIBER - A photonic bandgap fiber includes a hollow core formed along a center axis of the photonic bandgap fiber, through which a light propagates and a cladding region made of silica glass. The cladding region includes air holes forming a triangular lattice arranged around the hollow core. A lattice constant of the triangular lattice of the air holes Λ is equal to or smaller than 2.1 μm. Confinement loss in a predetermined wavelength range including a center wavelength of a photonic bandgap is lower than scattering loss. | 03-26-2009 |
| 20090052847 | OPTICAL FIBER RIBBON - An optical fiber ribbon and an optical fiber cable capable of suppressing deterioration of polarization mode dispersion and effective in improving the communication capacity in wavelength multiplex communication. In an optical fiber ribbon having a plurality of optical fibers | 02-26-2009 |
| 20090010657 | OPTICAL TRANSMISSION SYSTEM AND OPTICAL REPEATER - An optical repeater connected to an optical transmission line between an optical network unit having an ONU function on the side of a subscriber and an optical line termination (OLT) on the side of a center includes first electrical/optical conversion means connected to a first optical transmission line on the side of the center, a second electrical/optical conversion means connected to a second optical transmission line on the side of the subscriber, and transmission means connected between the first electrical/optical conversion means and the second electrical/optical conversion means to transmit an optical repeater supervisory signal between the optical transmission lines. | 01-08-2009 |
| 20080310805 | OPTICAL FIBER, OPTICAL FIBER RIBBON, AND OPTICAL INTERCONNECTION SYSTEM - An optical fiber is made of silica-based glass, and includes a core and a cladding. The optical fiber has a mode field diameter of 5.4 micrometers or larger at a wavelength of 1300 nanometers, transmits light with a wavelength of 1250 nanometers in a single mode, and has a bending loss of 1 dB/turn or smaller at a wavelength of nanometers when the optical fiber is bent with a curvature radius of 1 millimeter. | 12-18-2008 |
