| FUJIMI INCORPORATED Patent applications |
| Patent application number | Title | Published |
|---|
| 20120042807 | POWDER FOR THERMAL SPRAYING AND METHOD FOR FORMING THERMAL-SPRAY DEPOSIT - Disclosed is a thermal spray powder of granulated and sintered cermet particles. The granulated and sintered cermet particles have an average particle size of 5 to 25 μm. The particles have a compressive strength of 50 MPa or higher. The particles have a straight ratio of 0.25 or higher, the straight ratio being defined as a value resulting from dividing the maximum thickness of a thermal spray coating obtained, when 150 grams of the thermal spray powder is subjected to thermal spot spraying, by the length of the longest of line segments each of which has both ends thereof on a contour of the spray coating. The granulated and sintered cermet particles have an average aspect ratio of preferably 1.25 or lower. The thermal spray powder is preferably used in applications where a thermal spray coating is formed by high-velocity flame spraying or cold spraying. | 02-23-2012 |
| 20110250755 | METHOD OF POLISHING WAFER SURFACE ON WHICH COPPER AND SILICON ARE EXPOSED - A method of the present invention includes polishing a wafer having an exposed copper or copper alloy surface and an exposed silicon surface by using a polishing composition containing 0.02 to 0.6% by mass of hydrogen peroxide, preferably 0.05 to 0.2% by mass thereof. The polishing composition preferably further contains at least one of a complexing agent, an inorganic electrolyte, and abrasive grains such as colloidal silica. The polishing composition has a pH of preferably 9 or more, more preferably 10 or more. | 10-13-2011 |
| 20110223840 | Polishing Composition and Polishing Method Using The Same - A polishing composition contains at least abrasive grains and water and is used in polishing an object to be polished formed of a substrate material for optical devices, a substrate material for power devices, or a compound semiconductor material. The abrasive grains have a zeta potential satisfying the relationship X×Y≦0, where X [mV] represents the zeta potential of the abrasive grains measured in the polishing composition and Y [mV] represents the zeta potential of the object to be polished measured during polishing using the polishing composition. The abrasive grains are preferably of aluminum oxide, silicon oxide, zirconium oxide, diamond, or silicon carbide. The object to be polished is preferably of sapphire, gallium nitride, silicon carbide, gallium arsenide, indium arsenide, or indium phosphide. | 09-15-2011 |
| 20110183581 | POLISHING COMPOSITION AND POLISHING METHOD USING THE SAME - There is provided a polishing composition, containing abrasive grains and an acid represented either by R | 07-28-2011 |
| 20110180511 | Polishing Composition and Polishing Method Using the Same - A polishing composition of the present invention contains an oxidant, an anticorrosive, and a surfactant comprising a compound represented by Chemical Formula 1: | 07-28-2011 |
| 20110180483 | FILTRATION METHOD, METHOD FOR PURIFYING POLISHING COMPOSITION USING IT, METHOD FOR REGENERATING FILTER TO BE USED FOR FILTRATION, AND FILTER REGENERATING APPARATUS - According to the present invention, a filtration method capable of prolonging the life of a filter and regenerating it without impairing the efficiency can be provided. Further, a filter regenerating method and a regenerating apparatus, for efficiently regenerating a filter, are provided. The filtration method of the present invention is a method of subjecting a liquid to filtration by using a resin media filter, wherein ultrasonic waves at a frequency of at least 30 kHz are applied to the filter while the filtration is carried out, during the temporary stop of the filtration or after completion of the filtration. Efficient purification is possible by subjecting a polishing composition to filtration by such a filtration method. Further, the filter regenerating method of the present invention comprises applying ultrasonic waves at a frequency of at least 30 kHz to a used resin filter. | 07-28-2011 |
| 20110052870 | Method of Manufacturing Microstructure and Substrate Provided with the Microstructure - A method is provided for manufacturing a microstructure on a substrate in which the substrate has thereon linear and parallel atomic steps. The microstructure includes linear elements that extend along the atomic steps. The method includes a step for preparing a substrate having atomic steps on its surface and a step for applying linear elements onto the substrate. Each linear element is oriented to extend along one of the atomic steps, with the result that a microstructure in which the linear elements extend along the atomic steps is formed on the substrate. The substrate can be prepared by subjecting a silicon carbide substrate, a sapphire substrate, or a zinc oxide substrate to an ultrasmoothing process. As the linear elements, peptide fibers can be employed that are made up of peptide molecules that form β-sheet structures. | 03-03-2011 |
| 20100301014 | Polishing Composition and Polishing Method Using the Same - A polishing composition contains a nitrogen-containing compound and abrasive grains, and the pH of the composition is in the range of 1 to 7. The nitrogen-containing compound in the polishing composition preferably has a structure expressed by a formula: R | 12-02-2010 |
| 20100242374 | Polishing Composition and Polishing Method - In a polishing composition, the concentration of one of either sodium ions or acetate ions is 10 ppb or less, or the concentrations of sodium ions and acetate ions are 10 ppb or less. The polishing composition preferably contains a water soluble polymer such as hydroxyethylcellulose, an alkali such as ammonia, and abrasive grains such as colloidal silica. The polishing composition is mainly used in polishing of the surfaces of semiconductor wafers such as silicon wafers, especially used in finish polishing of the surfaces of such wafers. | 09-30-2010 |
| 20100040536 | Method for producing boehmite particles and method for producing alumina particles - A method for producing boehmite particles includes subjecting powder of aluminum hydroxide to hydrothermal reaction together with a nucleation agent, thereby obtaining boehmite particles having an average primary particle size of 0.6 μm or less and including primary particles each having a hexahedral shape. A method for producing alumina particles includes: drying the boehmite particles produced by the above described method; calcining the boehmite particles, which have been dried, to obtain alumina particles; and disintegrating the obtained alumina particles. | 02-18-2010 |
| 20100038584 | Polishing Composition and Polishing Method Using the Same - A polishing composition for electrochemical mechanical polishing a surface of an object in which the polishing composition contains a phosphate electrolyte such as a potassium phosphate, a chelating agent such as a potassium citrate, a corrosion inhibitor such as benzotriazole, an oxidizing agent such as hydrogen peroxide, and a solvent such as water. The polishing composition preferably further contains abrasive particles such as colloidal silica particles. | 02-18-2010 |
| 20100003821 | WETTING AGENT FOR SEMICONDUCTORS, AND POLISHING COMPOSITION AND POLISHING METHOD EMPLOYING IT - To provide a wetting agent for semiconductors and a polishing composition whereby the wettability of a semiconductor substrate surface can be improved, and microdefects such as particle attachments can be remarkably reduced. | 01-07-2010 |
| 20090179172 | POLISHING COMPOSITION - To provide a polishing composition which can satisfy both suppression of the surface topography and a high stock removal rate, in a polishing step in the production of a wiring structure. | 07-16-2009 |
| 20090173910 | POLISHING COMPOSITION - To provide a polishing composition which can satisfy both suppression of the surface topography and a high stock removal rate, in a polishing step in the production of a wiring structure. | 07-09-2009 |
| 20090156008 | Polishing Composition and Polishing Method Using The Same - A polishing composition includes an abrasive, at least one compound of azoles and derivatives thereof, and water. The polishing composition is used in applications for polishing surfaces of semiconductor substrates in a suitable manner. | 06-18-2009 |
| 20090137123 | Polishing Composition and Polishing Method - A polishing composition contains at least one water soluble polymer selected from the group consisting of polyvinylpyrrolidone and poly(N-vinylformamide), and an alkali, and preferably further contains at least one of a chelating agent and an abrasive grain. The water soluble polymer preferably has a weight average molecular weight of 6,000 to 4,000,000. The polishing composition is mainly used in polishing of the surfaces of semiconductor wafers such as silicon wafers, especially used in preliminary polishing of the surfaces of such wafers. | 05-28-2009 |
| 20090127500 | POLISHING COMPOSITION - A polishing composition contains a triazole having a 6-membered ring skeleton, a water soluble polymer, an oxidant, and abrasive grains. The triazole has a hydrophobic functional group in the 6-membered ring skeleton. The content of the triazole in the polishing composition is 3 g/L or less. The pH of the polishing composition is 7 or more. The polishing composition is suitably used in polishing for forming wiring of a semiconductor device. | 05-21-2009 |
| 20080305718 | Polishing Composition and Polishing Method - A first polishing composition includes abrasive grains and an iodine compound and has a pH of 6 or more. The first polishing composition can suitably polish the Si [0001] plane of a single crystal silicon carbide substrate. A second polishing composition includes an iodine compound and has a pH of 8 or less. The second polishing composition can suitably polish the C [000-1] plane of a single crystal silicon carbide substrate. A third polishing composition includes abrasive grains and an iodine compound and has a pH of 6 to 8, inclusive. The third polishing composition can suitably polish each of the Si [0001] and C [000-1] planes of a single crystal silicon carbide substrate. | 12-11-2008 |
| 20080289261 | POLISHING COMPOSITION AND POLISHING METHOD - To provide a polishing composition which is suitable particularly for an application to polish a wafer containing tungsten, and a polishing process employing such a polishing composition. | 11-27-2008 |
| 20080265205 | Polishing Composition - A polishing composition contains a protective film forming agent, an oxidant, and an etching agent. The protective film forming agent includes at least one type of compound selected from benzotriazole and a benzotriazole derivative and at least one type of compound selected from the compounds represented by the general formula ROR′COOH and a general formula ROR′OPO | 10-30-2008 |
| 20080245185 | THERMAL SPRAY POWDER AND THERMAL SPRAY COATING - A thermal spray powder including cermet particles, each of which contains metal containing at least one selected from the group consisting of cobalt, chrome, and nickel, and tungsten carbide. The ratio of the summed weight of cermet particles having a particle size of 25 μm or more in the thermal spray powder with respect to the summed weight of the entire cermet particles in the thermal spray powder is 0.5 to 15%. A thermal spray coating formed from the thermal spray powder is suitable for the formation of a tungsten carbide-based cermet thermal spray coating for use in rolls such as corrugated rolls. | 10-09-2008 |
| 20080241522 | THERMAL SPRAYING POWDER, THERMAL SPRAY COATING, AND HEARTH ROLL - A thermal spraying powder contains 30 to 50% by mass of chromium carbide with the remainder being an alloy containing chromium, aluminum, yttrium, and at least one of cobalt and nickel. The thermal spraying powder has an average particle size of 20 to 60 μm. The thermal spraying powder may contain 20% by mass or less of yttrium oxide in place of a part of the alloy. A thermal spray coating obtained by thermal spraying of the thermal spraying powder, particularly, a thermal spray coating obtained by high-velocity flame spraying of the thermal spraying powder is suitable for the purpose of a hearth roll. | 10-02-2008 |
| 20080210665 | POLISHING COMPOSITION AND POLISHING METHOD - A polishing composition includes an abrasive, phosphoric acid, and an oxidizing agent and has a pH of 6 or less. The polishing composition has the capability for polishing an alloy containing nickel and iron with a high stock removal rate. Accordingly, the polishing composition is preferably used in an application for polishing an object including the alloy containing nickel and iron. | 09-04-2008 |
