| FUJI ELECTRIC HOLDINGS CO., LTD. Patent applications |
| Patent application number | Title | Published |
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| 20120091883 | COLOR CONVERSION FILM USING POLYMERIC DYE, AND MULTICOLOR LIGHT-EMITTING ORGANIC EL DEVICE USING SAME - The present invention provides a color conversion film which can maintain sufficient conversion light intensity without increasing the thickness thereof, and a multicolor light-emitting organic EL device which uses such a film. The color conversion film of the invention includes a polymeric dye material composed of a first dye unit and a second dye unit. The first dye unit absorbs light incident on the color conversion film and transfers the energy of the absorbed incident light to the second dye unit. The second dye unit receives the energy from the first dye unit and emits light. | 04-19-2012 |
| 20120068163 | COLOR CONVERSION FILM CONTAINING A CONJUGATED HIGH MOLECULAR WEIGHT COPOLYMER AND MULTICOLOR LIGHT-EMITTING ORGANIC EL DEVICE INCLUDING THE SAME - Provided are a color conversion film that maintains sufficient converted light intensity over a long period of time without increasing its thickness and a multicolor light-emitting organic EL device that includes the color conversion film. The color conversion film contains a conjugated high molecular weight copolymer having a structure of formula (1) that has alternating fluorene group-containing repeating units and arylenevinylene repeating units, and has phenylene groups inserted as spacers on both ends of the fluorene groups. | 03-22-2012 |
| 20120032151 | COLOR CONVERSION FILM AND MULTICOLOR-EMITTING, ORGANIC ELECTROLUMINESCENT DEVICE COMPRISING THE COLOR CONVERSION FILM - A color conversion film is disclosed that absorbs light from an organic electroluminescent part emitting blue-green light and converts the light to visible light at a longer wavelength. The color conversion film includes two different dyes. A first dye is a polymer dye with an average molecular weight of 1000 to 1,000,000 that absorbs light incident on the color conversion film and transfers the energy of the light to a second dye. The second dye is a dye that receives the energy from the first dye and emits light. With a multicolor-emitting, organic electroluminescent device including the color conversion film, it is possible to achieve excellent conversion efficiency without increasing the thickness of the color conversion film as in a conventional device using a binder resin. | 02-09-2012 |
| 20120018048 | CREAM SOLDER AND METHOD OF SOLDERING ELECTRONIC PART - A cream solder obtained by kneading an Sn—Ag—Cu alloy together with a flux, wherein the Sn—Ag—Cu alloy includes a mixture of a first powdery alloy and a second powdery alloy, the first powdery alloy is represented by an Sn—Ag phase diagram having a solid-liquid coexistence region and has a given silver amount which is larger than that in the eutectic composition (3.5 wt. % silver), and the second powdery alloy has a silver amount which is that in the eutectic composition (3.5 wt. % silver) or which is close to that in the eutectic composition and is smaller than that in the first powdery alloy. This cream solder has excellent strength and thermal stability, and satisfactory bonding properties. It is based on an inexpensive Sn—Ag—Cu solder alloy. It is suitable for use as a high-temperature-side lead-free solder material conformable to temperature gradation bonding. Also provided is a method of soldering. | 01-26-2012 |
| 20120012954 | MAGNETIC MEMORY ELEMENT AND STORAGE DEVICE USING THE SAME - An object of the invention is to ensure the thermal stability of magnetization even when a magnetic memory element is miniaturized. A magnetic memory element includes a first magnetic layer ( | 01-19-2012 |
| 20110308834 | Laminated bus bar - A laminated bus bar is applied to a main wiring circuit of an electric power converter and connected to a semiconductor module. The laminated bus bar includes insulator plates laminated together, and conductors interposed between the insulator plates. Each conductor includes a connection terminal section led out in accordance with an arrangement of a main circuit terminal on the semiconductor module. A creepage groove is formed on an edge of each of the insulator plates in accordance with a position between the connection terminal sections. The laminated bus bar facilitates elongation of the creepage distance between the connection terminals. | 12-22-2011 |
| 20110297917 | ORGANIC ELECTROLUMINESCENT ELEMENT AND METHOD OF MANUFACTURING THE SAME - A method of manufacturing an organic EL element, which may be a top-emitting or a transparent organic EL element, provides an organic EL element having a low driving voltage and a high efficiency. The organic EL element includes a substrate; an anode; an organic EL layer which includes at least an emissive layer, an electron transport layer and a damage-mitigating electron injection layer; and a transparent cathode composed of a transparent conductive oxide material, the damage-mitigating electron injection layer is in contact with the transparent cathode, and the damage-mitigating electron injection layer includes a crystalline oligothiophene compound. | 12-08-2011 |
| 20110257912 | APPARATUS FOR ANALYSIS AND EVALUATION OF CHARACTERISTICS OF SERIES-CONNECTED SOLAR BATTERY CELLS - An apparatus for estimating and evaluating characteristics of large-area series-connected solar battery cells from a measured current-voltage characteristic of a small-area single cell, includes an analysis model construction unit, an analysis operation unit and an evaluation unit. The construction unit reads shape parameters and material physical properties of the cells and automatically constructs a finite element method model. The operation unit obtains a current at a voltage based on the measured characteristic, sets the current as a current load, calculates potential distributions of transparent electrode and rear electrode of the cells, corrects the current load based on a difference between the distributions and the measured characteristic, recalculates the distributions based on the corrected current load, and repeats the recalculation until the distributions converge. The evaluation unit evaluates whether a converged calculation result is a pattern exhibiting a desired current-voltage characteristic of the cells. | 10-20-2011 |
| 20110247685 | THIN-FILM SOLAR CELL AND METHOD FOR MANUFACTURING THE SAME - A thin-film solar cell can include a light-reflective metal electrode layer, a first transparent conductive layer, a semiconductor layer and a front transparent conductive layer. The metal electrode layer can be formed on a substrate and has an uneven structure. The first transparent conductive layer can contain an amorphous transparent conductive material. The thin-film solar cell further can have a second transparent conductive layer between the first transparent conductive layer and the semiconductor layer. The second transparent conductive layer can be made of a crystalline transparent conductive material. Due to the first transparent conductive layer made amorphous, the surface roughness of the metal electrode layer is reduced so that the semiconductor layer can be formed with a good film quality. | 10-13-2011 |
| 20110242866 | POWER SEMICONDUCTOR DEVICE AND POWER CONVERSION SYSTEM USING THE DEVICE - Aspects of the invention are related to a power semiconductor module applied to a multi-level converter circuit with three or more levels of voltage waveform. Aspects of the invention can include a first IGBT to which a diode is reverse parallel connected and a second IGBT having reverse blocking voltage whose emitter is connected to the emitter of the first IGBT are housed in one package, and each of the collector of the first IGBT, the collector of the second IGBT, and the connection points of the emitter of the first IGBT and the emitter of the second IGBT, is an external terminal. | 10-06-2011 |
| 20110242860 | POWER SEMICONDUCTOR DEVICE AND POWER CONVERSION SYSTEM USING THE DEVICE - In some aspects of the invention, a power semiconductor module is applied to a multi-level converter circuit with three or more levels of voltage waveform. A first IGBT, a diode whose cathode is connected to the emitter of the first IGBT, and a second IGBT having reverse blocking voltage whose emitter is connected to the emitter of the first IGBT, are housed in one package, and each of the collector of the first IGBT, the collector of the second IGBT, the connection point of the emitter of the first IGBT and the emitter of the second IGBT, and the anode of the diode, is an external terminal. | 10-06-2011 |
| 20110233525 | ORGANIC ELECTROLUMINESCENT DEVICE - An organic EL device is provided with a hole injection layer, a hole transport layer, a light-emitting layer, an electron transport layer and an electron injection layer between an anode and a cathode, wherein the hole injection layer is obtained by doping a hole transport material with an electron-accepting impurity, and the ionization potential Ip(HIL) of the material of the hole injection layer that composes the hole injection layer (also referred to as a hole injection material in the present description), the ionization potential Ip(HTL) of the hole transport material, and the ionization potential Ip(EML) of the material of the light-emitting layer (also referred to as a light-emitting layer material in the present description) respectively satisfy the relationship of Ip(EML)>Ip(HTL)≧Ip(HIL)≧Ip(EML)−0.4 eV. | 09-29-2011 |
| 20110222325 | SEMICONDUCTOR DEVICE - A semiconductor device of a three-level inverter circuit with a reduced number of power supplies for driving IGBTs. The semiconductor device includes a series-connected circuit of IGBTs between P and N of a DC power supply and an AC switch element that is connected between a series connection point of the series-connected circuit and a neutral point of the DC power supply. The series-connected circuit and the AC switch element are integrated into one module. The AC switch element is formed by connecting a collector of a first IGBT to which a diode is connected in reverse parallel and a collector of a second IGBT to which a diode is connected in reverse parallel, and an intermediate terminal is provided at a connection point between the collectors. | 09-15-2011 |
| 20110215435 | SEMICONDUCTOR DEVICE AND METHOD OF MANUFACTURING SEMICONDUCTOR DEVICE - Some embodiments of the present invention relate to a semiconductor device and a method of manufacturing a semiconductor device capable of preventing the deterioration of electrical characteristics. A p-type collector region is provided on a surface layer of a backside surface of an n-type drift region. A p | 09-08-2011 |
| 20110207267 | REVERSE BLOCK-TYPE INSULATED GATE BIPOLAR TRANSISTOR MANUFACTURING METHOD - A reverse block-type insulated gate bipolar transistor (IGBT) manufacturing method that, when manufacturing a reverse block-type IGBT having a separation layer formed along tapered surfaces of a V-shaped groove formed using anisotropic etching, can secure a highly reliable reverse pressure resistance, and suppress a leakage current when reverse biasing. When irradiating with a flash lamp for flash lamp annealing after implantation of ions into a second conductivity type separation layer and second conductivity type collector layer to form the second conductivity type collector layer and second conductivity type separation layer, the strongest portion of radiation energy is focused on a depth position from the upper portion to the central portion of a tapered side edge surface. | 08-25-2011 |
| 20110199175 | Inductor - Two conducting wires are used in one embodiment of an inductor. Opposite ends of each of the conducting wires are connected to leader lines (terminals) shared by the conducting wires. Each of the conducting wires is wound to make half a round of an annular or ring-like magnetic substance. One of the conducting wires is wound around a lower half area of the magnetic substance to form one winding while the other conducting wire is wound around an upper half area of the magnetic substance to form another winding. In this manner, the distance between the leader lines can be increased to eliminate parasitic capacitance between the leader lines. The magnetic fluxes generated by current flowing in the two windings are in the same direction. Thus, it is possible to provide an inductor whose total parasitic capacitance is reduced. In other embodiments, additional conducting wires are used. | 08-18-2011 |
| 20110188275 | METHOD FOR STARTING UP DC-DC CONVERTER - Aspects of the invention provide a method for starting up a DC-DC converter by which an output voltage can be prevented from overshooting and body diodes of switching devices can be prevented from reverse recovery. In the start-up method, the phases of gate signals of third and fourth switching devices are gradually shifted relative to the phases of gate signals of first and second switching devices. With increase of the phase shift, a voltage on a primary side of a transformer is also increased, and an output voltage is also increased. | 08-04-2011 |
| 20110186822 | ORGANIC EL DEVICE AND PROCESS FOR MANUFACTURING SAME - Provided is an organic EL device capable of maintaining an excellent luminous efficiency over an extended period of time, particularly in a top emission-type EL device. The organic EL device of the invention includes a substrate and an organic EL element formed on the substrate. The organic EL element is composed of a bottom electrode, an organic EL layer, a top electrode and a protective layer. The protective layer is composed of one or a plurality of inorganic films, and at least one of the one or plurality of inorganic films is an SiON:H film having stretching-mode peak area ratios, as determined by infrared absorption spectroscopy, that include an absorption area ratio of N—H bonds to Si—N bonds in the SiON:H film which is not less than 0.04 but not more than 0.07 and an absorption area ratio of Si—H bonds to Si—N bonds which is not more than 0.15. | 08-04-2011 |
| 20110175137 | ORGANIC EL DEVICE AND METHOD FOR MANUFACTURING THE SAME - An organic EL device is provided and, in particular, a top-emission-type organic EL device, which can maintain excellent light emission efficiency over a prolonged period of time. The organic EL device includes a substrate; and an organic EL element that is formed on the substrate and that includes a lower electrode, an organic EL layer, an upper electrode, and a protective layer. The protective layer includes at least one inorganic film provided that at least one film thereof is a SiN:H film having a stretching-mode peak area ratio, as determined by infrared absorption spectrum measurements, of N—H bonds to Si—N bonds that is greater than 0.06 but does not exceed 0.1, and having a stretching-mode peak area ratio, as determined by infrared absorption spectrum measurements, of Si—H bonds to Si—N bonds that is greater than 0.12 but does not exceed 0.17. | 07-21-2011 |
| 20110163400 | FERROMAGNETIC TUNNEL JUNCTION ELEMENT AND METHOD OF DRIVING FERROMAGNETIC TUNNEL JUNCTION ELEMENT - In a tunnel junction element having a ferromagnetic free layer, an insulating layer and a ferromagnetic fixed layer, in order to reduce the current necessary for spin-transfer magnetization reversal operation in the tunnel junction element, the ferromagnetic free layer comprises first and second ferromagnetic layers, a nonmagnetic metal layer is provided between these ferromagnetic layers, the nonmagnetic metal layer is such that magnetic coupling is preserved between the first and second ferromagnetic layers, also such that there is no influence on the crystal growth of the first and second ferromagnetic layers, the first ferromagnetic layer and the second ferromagnetic layer are placed such that the first ferromagnetic layer is in contact with the insulating layer, and the second ferromagnetic layer has a smaller magnetization than the first ferromagnetic layer. | 07-07-2011 |
| 20110156210 | SEMICONDUCTOR DEVICE - A semiconductor device according to embodiments of the invention includes an n | 06-30-2011 |
| 20110155296 | COLOR CONVERSION FILTER AND MANUFACTURING METHOD OF THE ORGANIC EL DISPLAY - A process for producing a color conversion filter uses an ink jet recording method, which can form a color conversion layer at a desired position without the need to separately form partition walls, and a process for producing an organic EL display. The process for producing a color conversion filter includes forming a black matrix having a plurality of opening parts on a transparent substrate, forming at least two types of color , filter layers independently of each other on a black matrix to which dissimilar color filter layers are adjacent, to form a partition wall, at least two of the color filter layers being superimposed on top of each other, and forming a color conversion layer by ink jet recording onto at least one of the color filter layers. | 06-30-2011 |
| 20110140089 | ORGANIC EL DEVICE - The object of the present invention is to provide an organic EL device having a structure that resolves a problem of trade-off between decrease in a drive voltage and increase in production yield. The organic EL device of the present invention includes a substrate, a pair of electrodes provided on the substrate, and an organic EL layer sandwiched by the pair of electrodes; the pair of electrodes includes a positive electrode and a negative electrode; the organic EL layer includes at least a light-emitting layer and a hole injection layer that is in contact with the positive electrode; the hole injection layer is formed of an n-type semiconductor host material and a p-type semiconductor guest material; a LUMO level E | 06-16-2011 |
| 20110122667 | RECTIFIER CIRCUIT - A high power factor rectifier circuit, provided with switching sections connected to an AC power supply for converting an AC voltage to a DC voltage, is formed with a bypass circuit provided. The bypass circuit, when the voltage of the AC power supply becomes higher than the voltage across a smoothing capacitor provided on the DC output side, makes a charge current flowing from the AC power supply to the capacitor bypass the switching section by making the switching section out of conduction. Thus, a rectifier circuit is provided which can be safely operated without causing any damage, or with minimized damage, even though an inrush current flows at turning-on the power or at recovery from a power interruption. | 05-26-2011 |
| 20110116293 | POWER CONVERSION EQUIPMENT - In a power conversion device, a capacitor series circuit is connected in parallel with a direct current power supply, outputs an alternating current voltage having three or more potentials in a half-cycle period with the capacitor series circuit as a direct current input, wherein a neutral point of an alternating current load and an intermediate connection point of the capacitor series circuit are directly connected, the voltage of each of the capacitors is detected, and a zero voltage vector obtained by making each alternating current output of the same potential is adjusted in accordance with the difference between the voltages. | 05-19-2011 |
| 20110109611 | SURFACE-EMITTING DISPLAY DEVICE - This invention provides a surface-emitting display device comprising a plurality of power supply lines | 05-12-2011 |
| 20110109345 | LOGIC CIRCUIT - A logic circuit includes two two-terminal switching devices and receives first and second pulses as inputs. Each of the two devices has two different stable resistivity values for each applied voltage that is greater than a first threshold voltage (Vth | 05-12-2011 |
| 20110096577 | POWER CONVERSION APPARATUS - A power conversion apparatus has a rectification circuit provided for converting AC power supplied from an AC power supply into DC power. The rectification circuit has a configuration in which series circuit whose number corresponds to the number of phases of an input AC are connected in parallel between a positive-side line and a negative-side line. The AC power supply is connected to AC input points, each corresponding to a connection point between a rectifying device and a semiconductor switching device in each of the series circuits, and connected to a point having ground potential through noise suppressing series circuits respectively. In each of the noise suppressing series circuits, a switch unit and a capacitor are connected in series. In this manner, it is possible to provide a power conversion apparatus which can reduce a noise terminal voltage while solving problems in volume and cost simultaneously. | 04-28-2011 |
| 20110090720 | UNIT INVERTER SYSTEM - In a unit inverter system where multiple unit inverters are connected in parallel, the quantity of operating unit inverters is determined in accordance with an amount of power to be converted. A gate signal of a semiconductor switching element of a unit inverter is turned off after an output current of the inverter is reduced when reducing the quantity of inverter units, thereby improving the partial load efficiency of the system without an adverse effect on the system. A regulator connected to the inverter determines dead time of the inverter according to the output current value and an average output current value of the unit inverters, waits for the determined dead time so as to reduce the output current of the unit inverter, and then turns off the gate signal. | 04-21-2011 |
| 20110084290 | ORGANIC EL DISPLAY AND METHOD FOR MANUFACTURING SAME - An object of this invention is to provide a top-emission type organic EL display in which filling defects of a resin filler material are alleviated during bonding of an organic EL emission panel and a color conversion filter panel with the resin filler material, as well as to provide a method for manufacturing such an organic EL display. An organic EL display of this invention is characterized in having stripe-shaped barrier walls for inkjet application placed on a color conversion filter panel, and a filler material guide wall placed between the length-direction end portions of the barrier walls for inkjet application and a peripheral seal member. | 04-14-2011 |
| 20110063899 | MAGNETIC MEMORY ELEMENT, METHOD OF DRIVING SAME, AND NONVOLATILE STORAGE DEVICE - In order to obtain a memory cell of size 4 F | 03-17-2011 |
| 20110062859 | COLOR CONVERSION TYPE ORGANIC EL DISPLAY - A color conversion type organic EL display can comprise an organic EL substrate that includes a substrate, a lower reflective electrode, a bank, and an organic EL layer sandwiched between the lower reflective electrode and an upper transparent electrode. The color conversion type organic EL display can further comprise a color filter substrate in which a black matrix and a color filter are formed in a pattern on a transparent substrate by a photo process, and which has a pixel region separated by the black matrix. The organic EL substrate and the color filter substrate can be bonded together and positioned such that the pixel region of the EL substrate and the pixel region of the color filter substrate are opposed. | 03-17-2011 |
| 20110032243 | DISPLAY DEVICE OF ACTIVE MATRIX TYPE - A display device of active matrix type allows reducing display brightness non-uniformity that is caused by initial variation and fluctuation over time in a driving transistor for emissive elements in pixel circuits. The display device includes pixel circuits, a measurement circuit and a gradation voltage supplying circuit. Each pixel circuit includes the driving transistor and an input circuit. The measurement circuit includes a constant current supplying circuit for generating and supplying one or more constant currents to the input circuit of the pixel circuits in a time division manner. The measurement circuit A/D-converts output voltages of the constant current supplying circuit and calculates data relating to electron mobility and threshold value of the driving transistor. The gradation voltage supplying circuit supplies to the pixel circuits a corrected gradation voltage, which is data corrected on the basis of data calculated from the measurement circuit. | 02-10-2011 |
| 20100327822 | Distributed power supply system - During single operation of a distributed power supply system that has been disconnected from a commercial electric power system, a frequency increase monitoring circuit is operated and an instruction to output a larger amount of a constant reactive current is given to a reactive current controlling unit. After the output frequency of the distributed power supply exceeds a frequency increase level, the level of an active current is limited in accordance with the level of the outputted reactive current. | 12-30-2010 |
| 20100327667 | Safety device and power converter - Whether a safety function unit having a safety function of a desired standard is correctly mounted in a safety device having a configuration in which a basic control function and safety function are separated is accurately determined. The safety device includes a controller and the safety function unit. The controller is provided with a unit which selects a category for identifying a safety function unit which should be connected, a unit which transmits a reference signal to the safety function unit, a unit which determined, based on a category identification signal returned from the safety function unit, whether or not the category of the connected safety function unit coincides with a selected category, and a unit which, in the event that the result of the determination is such that the category of the connected safety function unit and the selected category do not coincide, prohibits the output of a control signal. The safety function unit is provided with a unit which, based on the reference signal transmitted from the controller, generates the category identification signal in accordance with a process appropriate to the category of the safety function unit, and returns it to the controller. | 12-30-2010 |
| 20100297475 | SPIN VALVE ELEMENT - A spin valve element including an insulating layer or a nonmagnetic layer sandwiched by first and second ferromagnetic layers, and a porous layer having a plurality of minute holes placed in contact with one of the ferromagnetic layers, or near one of the ferromagnetic layer with another intervening layer therebetween. The first ferromagnetic layer is electrically connectable through the minute holes of the porous layer, and the second ferromagnetic layer is also electrically connectable. | 11-25-2010 |
| 20100291411 | SPIN VALVE ELEMENT AND METHOD OF MANUFACTURING SAME - A spin valve element including parallelly or serially connected magnetic element groups, each magnetic element group having a plurality of magnetic elements that each include an intermediate layer of an insulating member or a nonmagnetic member sandwiched by a pair of ferromagnetic layers. The plurality of magnetic elements are further connected either in series or in parallel. | 11-18-2010 |
| 20100289525 | LOGIC CIRCUIT - A logic circuit with a simple configuration and good current efficiency is provided. The logic circuit includes a two-terminal bistable switching element ( | 11-18-2010 |
| 20100284217 | MAGNETIC MEMORY ELEMENT, DRIVING METHOD FOR THE SAME, AND NONVOLATILE STORAGE DEVICE - A magnetic memory element ( | 11-11-2010 |
| 20100264455 | SEMICONDUCTOR DEVICE - On the top surface of a thin semiconductor wafer, top surface structures forming a semiconductor chip are formed. The top surface of the wafer is affixed to a supporting substrate with a double-sided adhesive tape. Then, from the bottom surface of the thin semiconductor wafer, a trench, which becomes a scribing line, is formed by wet anisotropic etching so that side walls of the trench are exposed. On the side walls of the trench with the crystal face exposed, an isolation layer with a conductivity type different from that of the semiconductor wafer for holding a reverse breakdown voltage is formed simultaneously with a collector region of the bottom surface diffused layer by ion implantation, followed by annealing with laser irradiation. The side walls form a substantially V-shaped or trapezoidal-shaped cross section, with an angle of the side wall relative to the supporting substrate being 30-70°. The double-sided adhesive tape is then removed from the top surface to produce semiconductor chips. With such a manufacturing method, a reverse-blocking semiconductor device having high reliability can be formed. | 10-21-2010 |
| 20100220500 | POWER CONVERTER AND METHOD FOR CONTROLLING POWER CONVERTER - The invention prevents the voltage change ratio of switching devices of a power converter from exceeding a specified maximum rating, thus avoiding damage in switching devices and an increase in conduction loss. In a power converter having a plurality of switching devices, switching means for switching a control scheme for the switching devices to a phase shift control scheme or a pulse width modulation scheme is provided, whereby the control scheme for the switching devices is switched from the phase shift control scheme to the pulse width modulation scheme in a non-load or light-load state. | 09-02-2010 |
| 20100140657 | POWER SEMICONDUCTOR DEVICE AND THE METHOD OF MANUFACTURING THE SAME - A semiconductor device according to the invention includes n-type semiconductor substrate | 06-10-2010 |
| 20100093164 | SEMICONDUCTOR DEVICE AND MANUFACTURING METHOD THEREOF - On the top surface of a thin semiconductor wafer, top surface structures forming a semiconductor chip are formed. The top surface of the wafer is affixed to a supporting substrate with a double-sided adhesive tape. Then, from the bottom surface of the thin semiconductor wafer, a trench, which becomes a scribing line, is formed by wet anisotropic etching so that side walls of the trench are exposed. On the side walls of the trench with the crystal face exposed, an isolation layer with a conductivity type different from that of the semiconductor wafer for holding a reverse breakdown voltage is formed simultaneously with a collector region of the bottom surface diffused layer by ion implantation, followed by annealing with laser irradiation. The side walls form a substantially V-shaped or trapezoidal-shaped cross section, with an angle of the side wall relative to the supporting substrate being 30-70°. The double-sided adhesive tape is then removed from the top surface to produce semiconductor chips. With such a manufacturing method, a reverse-blocking semiconductor device having high reliability can be formed. | 04-15-2010 |
| 20100041228 | Method of manufacturing a wiring board - In a method of manufacturing a wiring board, a basic circuit pattern is formed on an insulating plate, and a metal layer is formed on the basic circuit pattern by cold spraying to thereby form a built-up circuit pattern on the basic circuit pattern. | 02-18-2010 |
| 20100022075 | SEMICONDUCTOR DEVICE AND METHOD OF MANUFACTURING THE SEMICONDUCTOR DEVICE - An active region in a semiconductor device is made up of a parallel p-n layer including a first p-semiconductor layer and a first n-semiconductor with the widths and total amounts of impurities being equal to each other to provide a structure in which charges are balanced. A section parallel to stripes in the parallel p-n layer in an inactive region is made up of a second parallel p-n layer including a second p-semiconductor layer, with its width larger than that of the first p-semiconductor layer, and a second n-semiconductor layer with its width smaller than that of the first n-semiconductor layer. The total amount of impurities in the second p-semiconductor layer is made larger than that in the second n-semiconductor layer to provide a structure in which charges are made unbalanced. | 01-28-2010 |
| 20100019250 | SEMICONDUCTOR DEVICE AND METHOD OF FORMING THE SAME - A semiconductor device and a method of forming thereof has a base body has a field stopping layer, a drift layer, a current spreading layer, a body region, and a source contact region layered in the order on a substrate. A trench that reaches the field stopping layer or the substrate is provided. A gate electrode is provided in the upper half section in the trench. In a section deeper than the position of the gate electrode in the trench, an insulator is buried that has a normal value of insulation breakdown electric field strength equal to or greater than the value of the insulation breakdown electric field strength of the semiconductor material of the base body. This inhibits short circuit between a gate and a drain due to insulation breakdown of an insulator film at the bottom of the trench to realize a high breakdown voltage in a semiconductor device using a semiconductor material such as SiC. The sidewall surfaces of the trench located below the gate electrode is inclined to form a trapezoidal profile. | 01-28-2010 |
| 20090315039 | Trench MOS type silicon carbide semiconductor device - A trench MOS type SiC semiconductor device includes a first conductivity semiconductor substrate, a first conductivity drift layer on the substrate, a second conductivity base layer on the drift layer, a first conductivity source layer on the base layer, a stripe shaped trench reaching from the surface of the source layer to the drift layer and having a gate electrode via a gate oxide film, a second conductivity layer on the bottom of the trench, and a second conductivity type region thereon on across-the-width side walls of at least one end of the trench, electrically coupling the second conductivity layer with the base layer. The device allows a low on-resistance without newly forming an electrode connected to the second conductivity layer even in the case of a device in which the second conductivity layer has to be grounded. | 12-24-2009 |
| 20090284136 | ORGANIC LIGHT-EMISSION DEVICE - A method is disclosed for producing a top-emitting organic light emitting diode device containing a substrate having provided thereon at least a lower electrode, an organic layer containing a light-emission layer, and an upper transparent electrode. Also disclosed is the top-emitting organic light emitting diode device produced by the method. The method include the steps of first forming the organic layer, then forming a metallic thin layer capable of forming a transparent electroconductive oxide, and finally oxidizing the metallic thin layer on formation of the upper transparent electrode. | 11-19-2009 |
| 20090243471 | ORGANIC ELECTROLUMINESCENT DEVICE - An organic EL device is disclosed in which the amount of dopant added is easily controlled, and which is able to achieve stable light emission that does not depend on the current density of electrical current passing through the device. The organic electroluminescent device includes a first electrode, an organic electroluminescent layer having a hole injecting and transporting layer, an organic emissive layer and an electron injecting and transporting layer, and a second electrode. The organic emissive layer has an inner layer interposed between two outer layers. The outer layers contact the hole injecting and transporting layer and the electron injecting and transporting layer, respectively. The two outer layers are composed of a host material and a first fluorescent dopant, and the inner layer is composed of a host material, a first fluorescent dopant and a second fluorescent dopant. The first fluorescent dopant has a larger bandgap than the second fluorescent dopant. | 10-01-2009 |
| 20090230853 | METHOD OF PATTERNING COLOR CONVERSION LAYER AND METHOD OF MANUFACTURING ORGANIC EL DISPLAY USING THE PATTERNING METHOD - A method of patterning a color conversion layer for an organic EL device is provided together with a method of manufacturing a multiple color emitting organic EL display using the patterning method. The patterning method includes forming the color conversion layer on a base having an organic layer and patterning the color conversion layer by carrying out a thermal cycle nano imprint technique. | 09-17-2009 |
| 20090212696 | Resonant cavity color conversion el device and organic el display device using the same - A resonant cavity color conversion EL element in which intensity of converted light from a color conversion layer is increased and an organic EL display device in which viewing angle dependence of the color tone is small and the manufacturing process is simple. The EL element includes at least a pair of electrodes; a functional layer includes a light-emitting layer and is sandwiched by the pair of electrodes; a color conversion layer that absorbs light emitted from the light-emitting layer and emits light with a different wavelength; and a pair of light reflective layers. Notably, the pair of light reflective layers are composed of a non-transparent reflective layer and a semi-transparent reflective layer that have a distance therebetween that is set at an optical distance to construct a microcavity that increases intensity of light with a specific wavelength emitted from the color conversion layer. | 08-27-2009 |
| 20090206398 | SEMICONDUCTOR DEVICE AND MANUFACTURING METHOD OF THE SEMICONDUCTOR DEVICE - A semiconductor device including an n-type semiconductor substrate, a p-type channel region and a junction layer provided between the n-type semiconductor substrate and the p-type channel region is disclosed. The junction layer has n-type drift regions and p-type partition regions alternately arranged in the direction in parallel with the principal surface of the n-type semiconductor substrate. The p-type partition region forming the junction layer is made to have a higher impurity concentration than the n-type drift region. This enables the semiconductor device to have an enhanced breakdown voltage and, at the same time, have a reduced on-resistance. | 08-20-2009 |
| 20090189516 | ORGANIC EL LIGHT EMITTING DISPLAY - An organic EL light emitting display employs a color conversion system having a structure in which generation of dark areas in an organic EL element can be suppressed and emission of the organic EL light emitting element can be made highly efficient. The organic EL light emitting display successively includes a transparent substrate, one kind or a plurality of kinds of color filter layers, a bonding layer, a color conversion layer, a barrier layer, a transparent electrode, an organic EL layer and a reflecting electrode. The color filter layer is formed by a wet process, the color conversion layer and the barrier layer are formed by a dry process, and the bonding layer is selected from a group consisting of an inorganic bonding layer, an organic bonding layer, and a laminated body of an organic bonding layer and an inorganic bonding layer. | 07-30-2009 |
| 20090136663 | VACUUM VAPOR DEPOSITION APPARATUS AND METHOD, AND VAPOR DEPOSITED ARTICLE FORMED THEREWITH - When the ratio of a guest material to a host material is extremely small, it is difficult to maintain, with good accuracy, the ratio of the guest material to be vapor-deposited on the work surface and the distribution state of the guest material. The vacuum vapor deposition apparatus and method includes providing a shielding member, positioned between a first vapor deposition source and a substrate to be coated so that the vapor deposition amount of the guest material on the substrate surface is significantly less than the vapor deposition amount of the host material. A shielding member drive mechanism rotates the shielding member about a first axis while rotating the shielding member about a second axis, which is spaced from and parallel to the first axis. | 05-28-2009 |
| 20090105382 | FLAME RETARDANT RESIN TREATED ARTICLE - A flame retardant resin treated article that excels in flame retardancy and is free from bleedout. A resin composition comprising a flame retarder of metal phosphinate represented by the general formula: (I) (in the formula, each of R | 04-23-2009 |
| 20090050932 | SEMICONDUCTOR DEVICE AND THE METHOD OF MANUFACTURING THE SAME - To provide a semiconductor device that exhibits a high breakdown voltage, excellent thermal properties, a high latch-up withstanding capability and low on-resistance. The semiconductor device according to the invention, which includes a buried insulator region | 02-26-2009 |
| 20090048377 | FLAME-RETARDANT RESIN PROCESSED ARTICLE - Disclosed is a flame-retardant resin processed article having excellent flame retardance while being free from bleed-out. Specifically, a resin composition containing a cyclic phosphorus compound flame retardant, a hydrophilic silica powder having an average particle diameter of not more than 15 m, and a resin with the total content of the cyclic phosphorus compound and the hydrophilic silica powder being 10-45% by mass is molded into a certain shape or formed into a coating film. The hydrophilic silica powder is preferably composed of porous structures having a pore volume of not more than 1.8 ml/g and a pH of 4-7. More preferably, the hydrophilic silica powder has an oil absorption of not less than 50 ml/100 g in accordance with JIS K5101. | 02-19-2009 |
| 20090047114 | APPARATUS FOR MANUFACTURING THIN-FILM LAMINATED MEMBER AND METHOD OF CONVEYING THE MEMBER THEREIN - An apparatus for manufacturing a thin-film laminated member by laminating a plurality of thin films on the surface of a band-shaped flexible substrate includes a substrate conveying device for conveying the band-shaped flexible substrate in the horizontal direction with the widthwise direction of the band-shaped flexible substrate oriented in the vertical direction. A plurality of film forming chambers are arranged in succession along the direction in which the band-shaped flexible substrate is conveyed for forming films on the surface of the band-shaped flexible substrate. A pair of upper grip rollers are arranged between the plurality of film forming chambers for pinching an upper edge portion of the band-shaped flexible substrate while the band-shaped flexible substrate is being conveyed. A method thereof includes pinching the upper edge portion of the band-shaped flexible substrate with the pairs of upper grip rollers. | 02-19-2009 |
| 20090043032 | REACTIVE FLAME RETARDANT AND FLAME-RETARDANT RESIN PROCESSED ARTICLE - Disclosed is a reactive flame retardant which provides a resin with excellent flame retardance even when it is added in a small amount while being prevented from bleedout. Also disclosed is a flame-retardant resin processed article obtained by using such a reactive flame retardant. An organophosphorus compound represented by the general formula (I) below, wherein at least one or more of X | 02-12-2009 |
| 20090039342 | Thin film field-effect transistor and process for producing the same - Such a thin film transistor and a process for producing the same are provided that is capable of preventing the FET characteristics from being deteriorated with a short channel length. Such a thin film field-effect transistor and a process for producing the same are provided that contains a substrate | 02-12-2009 |
| 20090008675 | SOI TRENCH LATERAL IGBT - To enable driving at a high withstand voltage and a large current, increase latchup immunity, and reduce ON resistance per unit area in an IGBT, a trench constituted by an upper stage trench and a lower stage trench is formed over an entire wafer surface between an n | 01-08-2009 |
| 20080291137 | DRIVER DEVICE FOR AN ORGANIC EL PASSIVE MATRIX DEVICE - A driver device is provided for an organic EL passive matrix device that achieves reduction in power consumption and suppression of uneven luminance at a low cost. The driver device includes a column driver, a first row driver, a second row driver, a memory, and a power supply/control signal input. An anode of each organic EL element of the organic EL passive matrix device is connected to an output of the column driver, and cathodes in a row are connected together to an input of the row driver. In the driver device, the column driver is disposed in the vicinity of one peripheral side of the IC, and each of the row drivers is disposed in the vicinity of one of the two peripheral sides adjacent to the peripheral side at which the column driver is disposed. These three drivers are packaged on a single integrated chip (IC) chip. | 11-27-2008 |
| 20080280412 | METHOD OF MANUFACTURING SILICON CARBIDE SEMICONDUCTOR DEVICE - Stress is exerted to the SiC crystal in the region, in which the carriers of a SiC semiconductor device flow, to change the crystal lattice intervals of the SiC crystal. Since the degeneration of the conduction bands in the bottoms thereof is dissolved, since the inter-band scattering is prevented from causing, and since the effective electron mass is reduced due to the crystal lattice interval change, the carrier mobility in the SiC crystal is improved, the resistance of the SiC crystal is reduced and, therefore, the on-resistance of the SiC semiconductor device is reduced. | 11-13-2008 |
| 20080274268 | METHOD OF PRODUCING ORGANIC EL DEVICES - A method of producing an organic EL device is provided that realizes excellent color reproducibility in the organic EL device as a result of the excellent transparency of the passivation layer. During formation of a passivation layer by a CVD method in the production of an organic EL device that is provided with the passivation layer, a layer in which the internal stress is compressive stress and a layer in which the internal stress is tensile stress are stacked by modulating a gas pressure while holding a gas composition ratio constant. | 11-06-2008 |
| 20080258211 | SEMICONDUCTOR DEVICE AND METHOD FOR MANUFACTURING THE SAME - In a MIS-type semiconductor device having a trench gate structure, a withstand voltage is ensured without changing the thickness of a drift layer and on-resistance can be reduced without applying a high gate drive voltage. The lower half of a trench extending through a p-base region into an n-drift region is filled with a high-permittivity dielectric having a relative permittivity that is higher than that of a silicon oxide film, preferably a silicon nitride film, and an insulated gate structure including a gate insulator and a gate electrode is fabricated on the high-permittivity dielectric. The depth d | 10-23-2008 |
| 20080230004 | Apparatus for manufacturing a color conversion filter - An apparatus for manufacturing a color conversion filter, having a color filter layer on a transparent substrate. A coloring matter layer containing color conversion coloring matter and an optical radical generating agent are formed on the substrate and the filter layer. The coloring matter layer is exposed to coloring matter decomposition light applied through the substrate and the filter layer. The coloring matter layer also is exposed to auxiliary ultraviolet light applied from the side of the coloring matter layer. This forms a color conversion layer at a position corresponding to the filter layer. The optical radical generating agent is heat vaporized. The color conversion coloring matter is decomposed by light whose wavelength is outside a range that the color filter layer transmits. The coloring matter decomposition light includes a wavelength component that decomposes the color conversion coloring matter. The color conversion layer emits, through wavelength profile conversion, light that the color filter layer transmits. | 09-25-2008 |
| 20080226814 | METHOD FOR MANUFACTURING PATTERNED VAPOR-DEPOSITED FILM - A method for manufacturing a vapor-deposited film having a high-resolution pattern, without using a metal mask that makes it difficult to realize high resolution or an expensive laser scanning device. A patterned vapor-deposited film is manufactured by a method including: preparing a deposition panel containing a substrate, a plurality of heating elements, and a deposition material layer formed on the plurality of heating elements, the deposition material layer forming the outermost surface; disposing the deposition panel and a device substrate so that the deposition material layer faces the device substrate; and causing at least some of the plurality of heating elements to generate heat, selectively evaporating the deposition material layer that is positioned on the heating elements that have generated heat, and vapor depositing on a surface of the device substrate to form a vapor-deposited film. | 09-18-2008 |
| 20080224595 | Organic EL device - The present invention provides a high-efficiency organic EL device that can be fabricated by a simple process and that can prevent color shift arising from variations in film thickness. The organic EL light-emitting device includes a plurality of independent light-emitting elements that constitute first, second, and third emission color subpixels. The light-emitting elements constituting the first emission color subpixels and the second emission color subpixels have a semitransparent reflective layer between a transparent substrate and a transparent electrode, and this semitransparent reflective layer is configured so as to function with the reflective electrode as a resonator for the light of the emission colors. The light-emitting elements constituting the third emission color subpixels additionally have a color conversion layer between the transparent substrate and the transparent electrode. | 09-18-2008 |
| 20080224214 | SEMICONDUCTOR DEVICE AND FABRICATION METHOD - The present invention provides an SOI device which has high breakdown voltage, wide stable operation range, good thermal dissipation, and high effective conductance and good frequency characteristics, and a method for fabricating the device. In a semiconductor device, a BOX region is formed on a part of a surface layer of a p substrate. The BOX region is formed around a point where a vertical line is dropped from the center of the gate structure portion, and isolates a drain region and an extended drain region from the p | 09-18-2008 |
| 20080199748 | Fuel cell power generation device - A fuel cell power generation device prevents contamination of the cooling water of the fuel cell and maintains the pressure of the cooling water tank at the atmospheric pressure. The fuel cell power generation device includes a communicating pipe that connects the cooling water tank and the recovered water tank. The communicating pipe has a first blocking part and an open-to-atmosphere part located nearer to the cooling water tank than the first blocking part. An open-to-atmosphere device is located at a position higher than the first blocking part and couples the open-to-atmosphere part of the communicating pipe to atmospheric pressure. | 08-21-2008 |
