| Fuji Electric Co., Ltd. Patent applications |
| Patent application number | Title | Published |
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| 20120128469 | Corrosive Environment Monitoring System and Corrosive Environment Monitoring Method - Provided are corrosive environment monitoring systems and methods whereby corrosive factors are measured in a steam turbine and a corrosive environment is correctly monitored. More specifically, provided is a corrosive environment monitoring system which measures corrosive factors having a part in damaging and deteriorating structural members in a steam turbine and which is configured in such a way that steam in the steam turbine is permitted to flow into the corrosive environment monitoring system. Furthermore, in the steam turbine, there are provided a condensing mechanism which condenses steam that has flowed in and a corrosive factor measuring device which is equipped with corrosive factor sensors that measure corrosive factors in condensed water generated by the condensing mechanism. | 05-24-2012 |
| 20120127765 | CONTACTLESS POWER TRANSFER SYSTEM AND CONTROL METHOD THEREOF - A contactless power transfer system, including a coil configured to supply or receive power contactlessly via magnetic coupling, a bridge circuit having two direct current (DC) terminals and two alternating current (AC) terminals, and a smoothing capacitor connected between the DC terminals. A load is connectable to either end of the smoothing capacitor. One of the AC terminals is connected to one end of the coil via a first capacitor. The other of the AC terminals is connected to the other end of the coil. The bridge circuit includes two serially-connected circuits each having upper and lower arms, each arm having a semiconductor switch and a diode in reverse parallel connection. A second capacitor is connected in parallel to the semiconductor switch of an upper arm, or of a lower arm, or to two semiconductor switches respectively of an upper arm and of a lower arms, of the bridge circuit. | 05-24-2012 |
| 20120126860 | GATE DRIVING CIRCUIT - A highly-reliable gate driving circuit achieved by suppressing the amount of hot-carriers generated in a MOSFET. In the gate driving circuit having NOEMI circuits, same-type NOEMI circuits are connected in series with a p-channel MOSFET constituting a gate charging circuit and an n-channel MOSFET constituting a gate discharging circuit, respectively, so as to suppress the amount of hot-carriers generated in the p-channel MOSFET and the n-channel MOSFET. | 05-24-2012 |
| 20120126315 | SEMICONDUCTOR APPARATUS - A semiconductor apparatus that has a first parallel pn-layer formed between an active region and an n | 05-24-2012 |
| 20120122307 | METHOD OF MANUFACTURING SEMICONDUCTOR DEVICES - A method of manufacturing a semiconductor device is disclosed. The method includes forming a first trench and a second trench in an n-type substrate surface, the first trenches being spaced apart from each other, the second trench surrounding the first trenches, the second trench being wider than the first trench. The method also includes forming a gate oxide film on the inner surfaces of the first and second trenches, and depositing an electrically conductive material to the thickness a half or more as large as the first trench width. The method further includes removing the electrically conductive material using the gate oxide film as a stopper layer, forming an insulator film thicker than the gate oxide film, and polishing the insulator film by CMP for exposing the n-type substrate and the electrically conductive material in the first trench. | 05-17-2012 |
| 20120119256 | POWER SEMICONDUCTOR MODULE - In a semiconductor module according to certain aspects the invention, a U-terminal and an M-terminal overlap each other in a manner to reduce inductance and to further to reduce the size of snubber capacitor. In certain aspects of the invention, a P-terminal, M-terminal, N-terminal, and U-terminal are arranged such that the U-terminal, through which currents flow in and out, is arranged farthest away from control electrodes to reduce the noises superposed to control electrodes, and the P-terminal, M-terminal, N-terminal, and U-terminal are aligned to facilitate attaching external connection bars thereto. A power semiconductor module according to aspects of the invention can facilitate reducing the wiring inductance inside and outside the module, reducing the electromagnetic noises introduced into the control terminals, and attaching the external wirings to the terminals thereof simply and easily. | 05-17-2012 |
| 20120115257 | FILM FORMING METHOD AND FILM FORMING APPARATUS - A film forming process is performed on a substrate in a deposition chamber. A first electrode is provided in the deposition chamber and is grounded. A second electrode is provided in the deposition chamber to face the first electrode. A radio frequency power supply supplies radio frequency power to the second electrode. A DC power supply supplies a DC bias voltage to the second electrode. A control unit adjusts a bias voltage to be less than the potential of the second electrode when the radio frequency power is supplied, but the bias voltage is not supplied. In this way, it is possible to improve film quality while preventing a reduction in the deposition rate of a film during deposition. | 05-10-2012 |
| 20120113689 | SWITCHING POWER SUPPLY DEVICE - A switching power supply device that includes a feedback terminal to which a feedback signal according to a load state is input, and a comparator which compares a terminal voltage of the feedback terminal with a reference voltage and determines whether the load state is a normal load state or a light load state. The switching power supply device also includes pull-up resistors which are connected to the feedback terminal, a switch element which switches resistance values of the pull-up resistors according to the change of the load state, and a switch element which switches the resistance values of the pull-up resistors according to whether the input voltage is high or low. | 05-10-2012 |
| 20120112306 | SEMICONDUCTOR DEVICE WITH SUPERJUNCTION STRUCTURE - A superjunction semiconductor device is disclosed which has, in the active section, a first alternating-conductivity-type layer which makes a current flow in the ON-state of the device and sustains a bias voltage in the OFF-state of the device. There is a second alternating-conductivity-type layer in a edge-termination section surrounding the active section. The width of a region of a second conductivity type in the second alternating-conductivity-type layer becomes narrower at a predetermined rate from the edge on the active section side toward the edge of the edge termination section. The superjunction semiconductor device facilitates manufacturing the edge-termination section which exhibits a high breakdown voltage and a high reliability for breakdown voltage through a process that exhibits a high mass-productivity. | 05-10-2012 |
| 20120107524 | THIN-FILM MANUFACTURING METHOD AND APPARATUS - A thin-film manufacturing method includes the steps of: generating a plasma from source gas; extracting ions from the plasma; and depositing a thin film on one side or both sides of a substrate to be deposited with the ions. The method is performed in an apparatus including: a plasma chamber generating the plasma; a film deposition chamber accommodating the substrate to be deposited; an ion transfer path for transferring the ions from the plasma chamber to the film deposition chamber; a branch pipe branching from the ion transfer path; and an exhaust system connected to the branch pipe. The thin film is formed while the source gas except the ions is exhausted from the branch pipe. | 05-03-2012 |
| 20120106208 | SEMICONDUCTOR CONTROL DEVICE FOR A SWITCHING REGULATOR AND A SWITCHING REGULATOR USING THE SEMICONDUCTOR CONTROL DEVICE - A semiconductor control device can include a current detection signal input terminal, a feedback signal input terminal, a driving signal output terminal and a voltage adjusting circuit that delivers a voltage similar to a voltage of a primary winding of the flyback transformer to the current detection signal input terminal. The device can also include an oscillator circuit connected to the feedback signal input terminal; a one-shot circuit connected to the oscillator circuit, an RS flip-flop circuit that generates a driving signal to be delivered to the driving signal output terminal. A bottom detection section can receive a one-shot signal from the one-shot circuit, the current detection signal, and an output signal from the RS flip-flop circuit, and detect a bottom of the current detection signal to set the RS flip-flop circuit based on the detected bottom detection signal. | 05-03-2012 |
| 20120104417 | SILICON CARBIDE SEMICONDUCTOR ELEMENT, METHOD OF MANUFACTURING THE SAME, AND SILICON CARBIDE DEVICE - A silicon carbide semiconductor element and a manufacturing method thereof are disclosed in which a low contact resistance is attained between an electrode film and a wiring conductor element, and the wiring conductor element is hardly detached from the electrode film. In the method, a nickel film and a nickel oxide film are laminated in this order on a surface of an n-type silicon carbide substrate or an n-type silicon carbide region of a silicon carbide substrate, followed by a heat treatment under a non-oxidizing condition. The heat treatment transforms a portion of the nickel film into a nickel silicide film. Then, the nickel oxide film is removed with hydrochloric acid solution, and subsequently, a nickel aluminum film and an aluminum film are laminated in this order on a surface of the nickel silicide film. | 05-03-2012 |
| 20120100795 | AIR-CONDITIONING SYSTEM - An air-conditioning system includes a ceiling plenum disposed above a ceiling of a room; an air-conditioning machine disposed in an internal space of the room; a plurality of IT apparatus mounting racks disposed in a plurality of rows, with rear faces of the IT apparatus mounting racks in adjacent two rows opposed to each other; a upper partitioning board disposed between an upper face of the plurality of IT apparatus mounting racks and the ceiling; an end-partitioning board disposed between each of ends of a space between adjacent two rows of the plurality of IT apparatus mounting racks and the ceiling; and a ceiling opening portion provided in the ceiling above a warm-air space enclosed by the upper partitioning board and the end-partitioning board. The ceiling opening portion connects the warm-air space with the ceiling plenum. | 04-26-2012 |
| 20120100639 | SEMICONDUCTOR DEVICE MANUFACTURING METHOD AND MANUFACTURING APPARATUS - A semiconductor device manufacturing method and manufacturing apparatus with which it is possible, when a wafer has a warp, to effectively peel off an ultraviolet peelable tape with ultraviolet irradiation of a short duration. Even when a wafer has a warp, by correcting the warp of the wafer with an ultraviolet transmitting plate, and uniformly irradiating an ultraviolet peelable tape attached to the wafer with ultraviolet light, it is possible to reduce a distance between an ultraviolet light source and the ultraviolet peelable tape. Also, by blocking heat from the ultraviolet light source with the ultraviolet transmitting plate, it is possible to suppress a rise in temperature of the wafer. As a result of this, it is possible to effectively peel the ultraviolet peelable tape from the wafer with ultraviolet irradiation of a short duration without any adhesive residue remaining. | 04-26-2012 |
| 20120100396 | METHOD FOR MANUFACTURING PERPENDICULAR MAGNETIC RECORDING MEDIUM - A method for manufacturing with high productivity a magnetic recording medium having an MgO film is disclosed which uses a DC sputtering method. The method suppresses oxygen deficiency in the MgO film, and the MgO film has high crystallinity. The method includes at least a process of forming an intermediate layer of MgO on a nonmagnetic base by a reactive DC sputtering method that uses a target containing Mg and MgO in an oxygen-containing gas, and a process of forming a magnetic recording layer containing an L1 | 04-26-2012 |
| 20120098573 | CURRENT DETECTION CIRCUIT FOR A POWER SEMICONDUCTOR DEVICE - A current detection circuit for a power semiconductor device utilizes a sense function of the power semiconductor device. The magnitude of current flowing in power semiconductor devices | 04-26-2012 |
| 20120098414 | FLAT PANEL DISPLAY, INTERMEDIATE MANUFACTURED PRODUCT AND METHOD OF MANUFACTURING SAME - The present invention aims at providing a structure, manufacturing method, and an intermediate manufactured product enabling the low-cost manufacture of a flat panel display with high fineness. In a flat panel display of the invention, by decentering the opening portions formed by a bank in red and green subpixels to the blue subpixel side, color conversion layers with higher fineness can be formed even when using conventional apparatuses and materials. Moreover, decentering of the opening portions of the bank enables reductions in manufacturing time and manufacturing cost. | 04-26-2012 |
| 20120098085 | SEMICONDUCTOR DEVICE AND METHOD OF MANUFACTURING THE SAME - A semiconductor device, and method of manufacturing the device, having a p type diffusion layer; a V-groove including a bottom surface parallel to the rear surface and exposing the p type diffusion layer and a tapered side surface rising from the bottom surface; a p type semiconductor layer on the rear surface surrounded by the tapered side surface of the V-groove; and a p type isolation layer formed on the side surface and electrically connecting the p type diffusion layer on the front surface and the p type semiconductor layer on the rear surface. The V-groove has a chamfered configuration around the intersection between a corner part of the side surface and the bottom surface of the V-groove. An object is to prevent performance degradation due to stress concentration at the corner part of a recessed part caused by thermal history in soldering. | 04-26-2012 |
| 20120098064 | SEMICONDUCTOR DEVICE - A semiconductor device is disclosed wherein a peripheral region with a high breakdown voltage and high robustness against induced surface charge is manufactured using a process with high mass productivity. The device has n-type drift region and p-type partition region of layer-shape deposited in a vertical direction to one main surface of n-type semiconductor substrate with high impurity concentration form as drift layer, alternately adjacent parallel pn layers in a direction along one main surface. Active region through which current flows and peripheral region enclosing the active region include parallel pn layers. P-type partition region has impurity concentration distribution where concentration decreases from surface toward substrate side, n-type surface region disposed on parallel pn layers in peripheral region, p-type guard rings disposed separately from each other on n-type surface region, and field plate disposed on inner and outer circumferential sides of p-type guard rings, and electrically connected. | 04-26-2012 |
| 20120097360 | Air conditioner and air conditioning system - An air conditioner sucks air exhausted from an information processor, and cools down the sucked air. The air conditioner exhausts the cooled air. The air conditioner acquires a cooling state, determines whether a cooling capacity exceeds an upper limit value, and reduces the volume of exhaust air when it is determined that the cooling capacity exceeds the upper limit value. For example, the air conditioner calculates a thermal load as the cooling state by using the volume of exhaust air, a difference between the temperature of exhaust air and the temperature of suction air, and determines that the cooling capacity exceeds the upper limit value when the calculated thermal load exceeds a given threshold. The air conditioner measures the temperature of exhaust air, and determines that the cooling capacity exceeds the upper limit value when the measured temperature exceeds a set value. | 04-26-2012 |
| 20120088364 | SEMICONDUCTOR DEVICE AND THE METHOD OF MANUFACTURING THE SAME - A semiconductor device includes a semiconductor substrate; a metal electrode wiring laminate on the semiconductor substrate, the metal electrode wiring laminate being patterned with a predetermined wiring pattern; the metal electrode wiring laminate including an undercoating barrier metal laminate and aluminum or aluminum alloy film on the undercoating barrier metal laminate; and organic passivation film covering the metal electrode wiring laminate, wherein the barrier metal laminate is a three-layered laminate including titanium films sandwiching a titanium nitride film. The semiconductor device according to the invention facilitates improving the moisture resistance of the portion of the barrier metal laminate exposed temporarily in the manufacturing process, facilitates employing only one passivation film, facilitates preventing the failures caused by cracks from occurring and the failures caused by Si nodules remaining in the aluminum alloy from increasing. | 04-12-2012 |
| 20120086424 | POWER SEMICONDUCTOR DEVICE CURRENT DETECTOR CIRCUIT AND DETECTION METHOD - A small power semiconductor device current detector circuit and detection method with low loss by detecting current using the sensing function of a power semiconductor device is disclosed. An already known current is caused to flow through a main region of the power semiconductor device. The current is detected by a current detector unit connected to a sense terminal of the power semiconductor device. A deviation in characteristics between the main region and a sensing region is detected by a variable voltage source circuit based on the detected current. An offset amount and gain amount in an output regulator are regulated in such a way that the characteristics of the two coincide. The offset amount and gain amount to be regulated may be supplied to the output regulator, serially or in parallel, from a CPU provided externally. | 04-12-2012 |
| 20120086076 | SUPER-JUNCTION SEMICONDUCTOR DEVICE - Provision of a super-junction semiconductor device capable of reducing rises in transient on-resistance at the time of repeated switching operation. A super-junction structure is provided that has a striped parallel surface pattern, where a super-junction stripe and a MOS cell | 04-12-2012 |
| 20120082803 | PROTECTIVE FILM MAINLY COMPOSED OF A TETRAHEDRAL AMORPHOUS CARBON FILM AND A MAGNETIC RECORDING MEDIUM HAVING THE PROTECTIVE FILM - A protective film is disclosed that is mainly composed of a tetrahedral amorphous carbon (ta-C film) that is denser than a DLC film formed by a plasma CVD method and containing aggregate particles so reduced as to a necessary and sufficient level, to provide a method of manufacturing such a protective film, and to provide a magnetic recording medium comprising such a protective film. The film is mainly composed of a ta-C film formed by a filtered cathodic arc method using a cathode target of glass state carbon. A magnetic recording medium is disclosed which includes a substrate, a magnetic recording layer, and the protective film mainly composed of a ta-C film. | 04-05-2012 |
| 20120081149 | LEVEL SHIFT CIRCUIT - A level shift circuit is disclosed. The circuit includes a series circuit of a resistor and a switching device connected between a high voltage side power supply voltage in a secondary side voltage system and a low voltage side power supply voltage in a primary side voltage system, a series circuit of a resistor and a switching device connected between the high voltage side power supply voltage in the secondary side voltage system and the low voltage side power supply voltage in the primary side voltage system, and a latch malfunction protecting circuit operated in the secondary side voltage system to have voltages at a connection point of the resistor and the switching device and at a connection point of the resistor and the switching device inputted. | 04-05-2012 |
| 20120081139 | SEMICONDUCTOR TEST DEVICE, SEMICONDUCTOR TEST CIRCUIT CONNECTION DEVICE, AND SEMICONDUCTOR TEST METHOD - A semiconductor test device and method for sequentially carrying out tests including an AC test, DC test, and thermal resistance test on a power semiconductor device are provided. The semiconductor test device includes a holding unit that positions the power semiconductor device. Test units each generate a test signal for the power semiconductor device and determine a test result generated in response to the test signal. A connection unit switches between the test units and selectively connects the test units electrically to electrodes of the power semiconductor device. The connection unit is controlled such that the test units are sequentially connected to the power semiconductor device to perform a plurality of the tests. The connection unit may include parallel plate electrodes in proximity to each other across an insulating sheet. The parallel plate electrodes may connect the power semiconductor device to positive and negative power sources of the test unit. | 04-05-2012 |
| 20120075922 | MAGNETIC MEMORY ELEMENT AND STORAGE DEVICE USING THE SAME - A magnetic memory element capable of maintaining high thermal stability (retention characteristics) while reducing a writing current. The magnetic memory element includes a magnetic tunnel junction having a first magnetic body including a perpendicular magnetization film, an insulating layer, and a second magnetic body serving as a storage layer including a perpendicular magnetization film, which are sequentially stacked. A thermal expansion layer is disposed in contact with the magnetic tunnel junction portion. The second magnetic body is deformed in a direction in which the cross section thereof increases or decreases by the thermal expansion or contraction of the thermal expansion layer due to the flow of a current, thereby reducing a switching current threshold value required to change the magnetization direction. | 03-29-2012 |
| 20120075893 | INVERTER DEVICE OVERVOLTAGE PROTECTION METHOD - An inverter device overvoltage protection method that can appropriately protect an inverter device from an overvoltage condition is disclosed. When the DC voltage rises, and a DC voltage detection value exceeds a second DC voltage level, a protective circuit stops the inverter device by outputting an inhibit signal to a gate drive circuit, but it is assumed at this time that the rise of the DC voltage is temporary and no error output signal is output to the exterior of the inverter device. However, in the event that the DC voltage rises further while the inverter device is temporarily stopped, and the DC voltage detection value exceeds a first DC voltage level, it is determined that protection of the inverter device is necessary, and an error output signal is output to the exterior of the inverter device. | 03-29-2012 |
| 20120074563 | Semiconductor apparatus and the method of manufacturing the same - A semiconductor apparatus includes a semiconductor chip, a post electrode positioned on the front surface electrode, and a metal particle layer having metal particles bonded actively to each other. The front surface electrode and the post electrode are bonded with each other through the metal particle layer. A method of manufacturing a semiconductor apparatus includes the steps of coating metal particles protected with organic coating films to at least one of the front surface electrode of a semiconductor chip or the post electrode; pressing and heating the metal particles between the front surface electrode of the semiconductor chip and post electrode for breaking the organic coating films and for exposing the metal particles; and actively bonding the exposed metal particles to each other for bonding the front surface electrode and post electrode. | 03-29-2012 |
| 20120073381 | PRESSURE SENSOR PACKAGE - An aspect of a pressure sensor package is that a condensed droplet can be prevented from solidifying and blocking the hole of a pressure inlet pipe, without increasing the external dimensions of the package. Aspects of the invention include a groove in a wall surface of a hole of a pressure inlet pipe, a droplet condensed on the wall surface spreads along the groove by a capillary action, and it is possible to prevent the hole of the pressure inlet pipe being blocked by the droplet. | 03-29-2012 |
| 20120070932 | LASER PATTERNING APPARATUS AND LASER PATTERNING METHOD - Aspects of the invention are directed to laser patterning apparatus capable of performing laser patterning on a thin film formed on a flexible substrate with a good yield and a laser patterning method thereof. The thin film formed on the flexible substrate can be patterned by laser using a laser patterning apparatus that can include a processing stage that has a reference processing surface on which the flexible substrate having the thin film formed thereon is disposed, a wrinkle removing device that is configured as a mechanism for stretching an outer periphery of a processing region of the flexible substrate so that tension is applied outward in the width direction and forward and backward in the transporting direction, and a laser scanner that scans a predetermined line of the thin film formed on the flexible substrate while emitting a laser beam thereto. | 03-22-2012 |
| 20120067403 | Photovoltaic module - A photovoltaic module includes a substrate structure photovoltaic cell, sealing layers, and front and rear surface protection layers. The photovoltaic cell includes a film substrate, on which a metal electrode layer, a thin film photoelectric conversion layer, and a transparent electrode layer are stacked. The sealing layers are stacked on light receiving surface side and non-light receiving surface side of the photovoltaic cell, and directly joined to each other in a periphery of the photovoltaic cell. The front surface protection layer is joined to the light receiving surface side sealing layer, and a rear surface protection layer is joined to the non-light receiving surface side sealing layer. The front surface protection layer is formed of a transparent resin film, and a glass coating layer is formed on the light receiving surface side thereof. | 03-22-2012 |
| 20120067393 | SOLAR CELL MODULE AND METHOD OF MANUFACTURING THE SAME - Aspects of the invention provide a solar cell module with a pressure sensitive adhesive member. The solar cell module with a pressure sensitive adhesive member can include a flexible solar cell module and a pressure sensitive adhesive member that is arranged so as to cover at least a portion of the rear surface of the flexible solar cell module. The storage modulus G′ of the pressure sensitive adhesive member can be in the range of 0.02 MPa to 0.7 MPa under the use conditions of the flexible solar cell module. Another aspect of the invention can provide a support member integrated solar cell module including a solar cell module with a pressure sensitive adhesive member and a support member integrated with each other. | 03-22-2012 |
| 20120064706 | SEMICONDCUTOR DEVICE AND METHOD OF PRODUCING THE SAME - A semiconductor device is provided in which a semiconductor substrate can be prevented from being broken while elements can be prevented from being destroyed by a snap-back phenomenon. After an MOS gate structure is formed in a front surface of an FZ wafer, a rear surface of the FZ wafer is ground. Then, the ground surface is irradiated with protons and irradiated with two kinds of laser beams different in wavelength simultaneously to thereby form an N | 03-15-2012 |
| 20120063180 | Protection Circuit for a Power Conversion Apparatus - A protection circuit that interrupts a supply of power to a driving circuit for a power conversion apparatus upon detection of an abnormality includes switches connected in series between the power supply and the driving circuit. An interruption signal enabling/disabling circuit controls the transmission of an interruption signal from the power conversion apparatus to one of the switches and turns the switch off. A monitoring circuit monitors a voltage output from the switches, and determines that the switch which is to be turned off is in a short-circuit state if the voltage is a normal value. A switch may also be determined to be in a short-circuit fault state if the interruption signal turns the switches off, and if a monitored voltage output from the switches decreases at a decay rate faster than a decay rate in a condition where the switch is not in a short-circuit state. | 03-15-2012 |
| 20120063174 | POWER FACTOR CORRECT CURRENT RESONANCE CONVERTER - A power factor correct current resonance converter is disclosed which eliminates interference of switching operations between two cascade-connected converter circuits. The power factor correct current resonance converter includes a current resonance converter circuit having switches, a resonance capacitor, a resonance inductor, a transformer, diodes, a smoothing capacitor, and a control circuit. The power factor correct current resonance converter also includes a power factor correct converter circuit having a choke coil, a diode, a smoothing capacitor, and a switch. The switch is turned on or off in response to a voltage produced in a winding of the transformer. Thus, the switching operation of the power factor correct converter circuit is performed in synchronization with the switching operation of the current resonance converter circuit, so that interference of the switching operations is eliminated. In addition, since a dedicated control circuit is not required, the cost can be reduced. | 03-15-2012 |
| 20120060892 | SOLAR CELL MODULE AND LAMINATING METHOD - Aspects of the invention relate to connecting internal wiring lines to multiple sheet-shaped photoelectric conversion elements without damaging flexibility. Sub-metal foil lines can be arranged so as to come into contact with rear electrode layers of photoelectric conversion elements. The sub-metal foil line can be fixed to the rear electrode layer by an adhesive tape. In addition, the sub-metal foil line can be folded such that a main metal foil line is interposed between the folded portions of the sub-metal foil line. In this way, the main metal foil line is connected to the sub-metal foil line. The sub-metal foil line can be fixed to the rear electrode layer by an adhesive tape. | 03-15-2012 |
| 20120058422 | PHOTORECEPTOR FOR ELECTROPHOTOGRAPHY, PROCESS FOR PRODUCING THE SAME, AND ELECTROPHOTOGRAPHIC APPARATUS - Provided is a photoreceptor for electrophotography, a process for producing the photoreceptor, and an electrophotographic apparatus that includes the photoreceptor. The photoreceptor has a photosensitive layer which contains a resin binder that is a copolymerized polyallylate resin. An electrophotographic apparatus having a photoreceptor drum that includes this photoreceptor has a reduced surface frictional resistance throughout the printing period from the beginning to after printing, thus reducing the amount of surface wear while producing satisfactory images. | 03-08-2012 |
| 20120045864 | MULTILAYER FILM FORMATION METHOD AND FILM DEPOSITION APPARATUS USED WITH THE METHOD - A multilayer film formation method and film deposition apparatus that suppress fluctuations in thickness, stabilize product quality, and reduce costs. The method employs gas-phase chemical reaction to form a multilayer film having at least three layers using raw material gases of differing compositions. A film formation apparatus is provided having at least first and second film deposition portions along a transfer path of the substrate, and having a supply/recovery portion for the substrate at either end of the transfer path; continuously transferring the substrate along the transfer path at a first speed during a first transfer and film deposition to form a plurality of stacked layers including first and second layers; and continuously transferring the substrate along the transfer path at a second speed during a second transfer and film deposition to form a third layer having the third composition that differs from those of the first and second layers. | 02-23-2012 |
| 20120044728 | ELECTRIC POWER CONVERTER - In aspects of the invention, first and second series circuits of switching devices and a series circuit of capacitors are connected in parallel. Between the connection point in the first series circuit of switching devices and the connection point in the series circuit of capacitors, a first bidirectional switch is connected and, between the connection point in the second series circuit of switching devices and the connection point in the series circuit of capacitors, a second bidirectional switch is connected. The connection point in the first series circuit of switching devices is connected through a reactor to an input-output common connection line connected to one end of an AC power supply and the other end of the AC power supply is connected to the connection point in the series circuit of capacitors. | 02-23-2012 |
| 20120044029 | NOISE FILTER AND AN EMC FILTER USING THE SAME - A noise filter for suppressing conducted emission generated in a power conversion apparatus includes a grounding capacitor circuit, an interphase capacitor circuit and an impedance circuit. The impedance circuit is connected to at least one of the grounding capacitor circuit and the interphase capacitor circuit for adjusting attenuation characteristics of the noise filter. | 02-23-2012 |
| 20120038392 | DRIVING CIRCUIT OF INSULATED GATE DEVICE - A driving circuit for driving an insulated gate semiconductor device based on a voltage of an externally-inputted gate signal, where the insulated gate semiconductor device has a source, a drain and a gate, and a parasitic capacitor exists between the drain and the gate. The driving circuit includes a gate voltage controlling semiconductor device disposed between, and connecting, the gate and the source of the insulated gate semiconductor device. The gate voltage controlling semiconductor device has a source and a gate, and is driven by a current charging the parasitic capacitor. The driving circuit also includes a pull-up device disposed between, and connecting, the source and the drain of the gate voltage controlling semiconductor device. | 02-16-2012 |
| 20120034556 | ELECTROPHOTOGRAPHIC PHOTORECEPTOR, PROCESS FOR PRODUCING THE ELECTROPHOTOGRAPHIC PHOTORECEPTOR, AND ELECTROPHOTOGRAPHIC DEVICE - An electrophotographic photoreceptor includes an electroconductive substrate; an undercoat layer provided on the electroconductive substrate and composed of: metal oxide fine particles including particles of at least one metal oxide and at least one organic compound provided on the particles of the at least one metal oxide as a surface treatment; and a copolymer resin synthesized by copolymerization of essential constituent monomers composed of a dicarboxylic acid, a diol, a triol and a diamine; and a photosensitive layer laminated on the undercoat layer. The undercoat layer permits (a) attaining stable electric potential characteristics in all environments ranging from low temperature and low humidity environments to high temperature and high humidity environments, (b) suppressing the occurrence of printing defects and density differences, and (c) simultaneously attaining transfer restorability and restorability from intense light-induced fatigue even in a wide variety of usages and operation environments. | 02-09-2012 |
| 20120033341 | SEMICONDUCTOR APPARATUS EXHIBITING CURRENT CONTROL FUNCTION - An ignitor semiconductor apparatus can include an output stage IGBT that controls the ON and OFF of the primary current of ignition coil, a sensing IGBT and a sensing resistance for detecting the current flowing through output stage IGBT, gate resistance and a current control circuit that detects the voltage across sensing resistance and controls the current flowing through output stage IGBT. First and second gate control circuits separately control the gate voltages of IGBT's such that the gate voltage of the output stage IGBT is higher than the gate voltage of the sensing IGBT, when the current flowing through output stage IGBT is larger than a predetermined current value, and such that the gate voltage of output stage IGBT is lower than the gate voltage of sensing IGBT, when the current flowing through output stage IGBT is smaller than the predetermined current value. | 02-09-2012 |
| 20120032305 | SEMICONDUCTOR DEVICE AND MANUFACTURING METHOD THEREOF - A semiconductor device and a manufacturing method thereof is disclosed in which the semiconductor device includes a p-type anode layer formed by a transition metal acceptor transition, and the manufacturing process is significantly simplified without the breakdown voltage characteristics deteriorating. An inversion advancement region inverted to a p-type by a transition metal acceptor transition, and in which the acceptor transition is advanced by point defect layers, is formed on the upper surface of an n-type drift layer. The inversion advancement region configures a p-type anode layer of a semiconductor device of the invention. The transition metal is, for example, platinum or gold. An n-type semiconductor substrate with a concentration higher than that of the n-type drift layer is adjacent to the lower surface of the n-type drift layer. | 02-09-2012 |
| 20120031565 | FLEXIBLE SUBSTRATE POSITION CONTROL DEVICE - A flexible substrate position control device in a processing device, which transports a flexible substrate in a horizontal direction and in a vertical orientation and carries out processing of the substrate by processing units installed in a transport path of the substrate, is provided with a pair of clamping rollers that clamp an upper edge of the substrate, a support mechanism that rotatably supports the pair of clamping rollers, urging means for applying pressing force to the pair of clamping rollers, and adjusting means for adjusting the pressing force applied by the urging means. The pair of clamping rollers has an inclination, in which the direction of pressing relative to the clamping surface of the substrate is towards the edge of the substrate in the width direction, and is supported such that the rotating direction at the clamping surface is the same direction as the transport direction of the substrate. | 02-09-2012 |
| 20120031455 | SOLAR CELL MODULE - A solar cell module is disclosed that includes a solar cell power generating unit and a connecting member. The connecting member supplies the output of a solar cell to an external electronic component. The connecting member includes a covering member and an output connecting portion. The covering member covers at least the surface of a terminal portion among the surfaces of the terminal portion and a protective member. The output connecting portion has one end disposed in the covering member and the other end disposed outside the covering member. The one end of the output connecting portion is connected to the terminal portion of the solar cell power generating unit. The other end of the output connecting portion has a terminal for connection to an electronic component. | 02-09-2012 |
| 20120028077 | PERPENDICULAR MAGNETIC RECORDING MEDIUM - A perpendicular magnetic recording medium is disclosed that enables a high track density while maintaining good OW characteristics, SNR, and thermal stability. The medium includes a magnetic recording layer on a non-magnetic base, wherein the magnetic recording layer includes a first magnetic layer, a first exchange coupling control layer, a second magnetic layer, a third magnetic layer, and a fourth magnetic layer, in that order. It is preferable that when the perpendicular magnetic anisotropy constants of the first magnetic layer, second magnetic layer, third magnetic layer, and fourth magnetic layer are Ku | 02-02-2012 |
| 20120025873 | SEMICONDUCTOR DRIVE DEVICE - When there is a short circuit failure between the gate and emitter of a main switching element such as an IGBT, the temperature of a turn-on gate resistor or turn-off gate resistor is detected by a thermistor, and a drive circuit is protected by turning off a turn-on gate drive switching element or a turn-off gate drive switching element. Furthermore, instead of detecting the temperature of the turn-on gate resistor or turn-off gate resistor, a thermistor is connected in series with the turn-on gate drive switching element or turn-off gate drive switching element, the resistance change corresponding to a change in temperature of the thermistor is detected, and the drive circuit is protected by turning off the turn-on gate drive switching element or turn-off gate drive switching element. | 02-02-2012 |
| 20120025262 | MOS Type Semiconductor Device and Method of Manufacturing Same - An object of the present invention is to provide a MOS type semiconductor device allowing production at a low cost without lowering a breakdown voltage and avoiding increase of an ON resistance. A MOS type semiconductor device of the invention comprises: a p base region having a bottom part in a configuration with a finite radius of curvature and selectively disposed on a front surface region of a n | 02-02-2012 |
| 20120020137 | POWER CONVERSION DEVICE - A single phase three-level power converter can include a first half bridge and a second half bridge. A half bridge operation is implemented in either the first half bridge or second half bridge when outputting a single phase alternating current voltage having an amplitude a half or less than that of a direct current input voltage, and also, by alternately switching between the bridges carrying out the half bridge operation. In certain configurations, the power converter can convert a direct current input voltage into alternating current phase voltages having three levels of potential, which are positive, negative, and intermediate voltages, by controlling on-off conditions of a plurality of switch elements, and a controller that, by supplying gate signals to the switch elements configuring the first half bridge and second half bridge, controls the related on-off conditions. | 01-26-2012 |
| 20120018777 | THREE LEVEL POWER CONVERTING DEVICE - Aspects of the invention are directed to a three-level power converter that has, as one phase, a bidirectional switching element connected to the series connection point of a series circuit of a first insulated gate bi-polar transistor (“IGBT”) and second IGBT and an intermediate electrode of a direct current power supply. Also included is a fuse connected between the bidirectional switching element and the intermediate electrode of the direct current power supply, and an overcurrent shutdown unit provided in each gate drive circuit of the first and second IGBTs, are provided as protection from a power supply short circuit phenomenon occurring in the event of a short circuit failure of any of the IGBTs or diodes. | 01-26-2012 |
| 20120018741 | SEMICONDUCTOR APPARATUS - A semiconductor apparatus according to embodiments of the invention can include a first semiconductor device made of silicon, the first semiconductor devices being arranged collectively, whereby to form a first device group, and a second semiconductor device made of silicon carbide, the second semiconductor devices being arranged collectively, whereby to form a second device group. The apparatus can also include a wiring conductor connecting the first semiconductor device and the second semiconductor device, a cooling fin base comprising a projection formed thereon, whereby to dissipate heat generated from the first and second semiconductor devices, and the projections arranged under the second device group being spaced apart from each other more widely than the projections arranged under the first device group. | 01-26-2012 |
| 20120018709 | ORGANIC ELECTROLUMINESCENCE ELEMENT AND METHOD OF MANUFACTURE OF SAME - An organic EL element, includes, in the order recited: a supporting substrate; an anode; an organic EL layer and having provided thereon, in the order recited: a hole transport layer; a light emission layer; an electron transport layer; and an electron injection layer, in which the hole transport layer, the light emission layer, and the electron transport layer are composed of organic materials, and the electron injection layer is composed of an n-type chalcogenide semiconductor having an optical band gap of 2.1 eV or greater; and a cathode provided on the organic EL layer and composed of a transparent conductive oxide. The organic EL element is a low-voltage, high-efficiency top-emission type or transparent organic EL element. Disclosed also is a method of manufacturing the organic EL element includes forming the electron injection layer by a physical vapor phase growth method that is free of plasma discharge. | 01-26-2012 |
| 20120018404 | DIRECT-CURRENT SWITCH - A miniaturized direct-current switch with which power loss is reduced when establishing continuity of a direct-current path is provided. The direct-current switch includes an electronic open/close switch inserted in a direct-current path along which a direct current flows in order to make the direct-current path an open circuit or a closed circuit, a parallel mechanical open/close switch connected in parallel to the electronic open/close switch, and a switch control circuit that controls the opening or closing time difference mutually between the parallel mechanical open/close switch and the electronic open/close switch, wherein the switch control circuit makes the parallel mechanical open/close switch a closed circuit a predetermined time after the electronic open/close switch has been made a closed circuit. | 01-26-2012 |
| 20120013370 | GATE DRIVING CIRCUIT FOR POWER SEMICONDUCTOR ELEMENT - A gate driving circuit for driving a power semiconductor element can include a MSINK that is an n-channel metal-oxide silicon field-effect transistor (MOSFET) with a low resistance value for rapidly drawing out the charges accumulated on the gate of an insulated gate bipolar transistor (IGBT), and a MSOFT that is an n-channel MOSFET with a high resistance value for slowly drawing out the charges. By shifting the time for turning ON of these MOSFETs, soft interruption can be performed rapidly and surely when overcurrent or short circuit current flows in the IGBT. Therefore, device breakdown is minimized or avoided and noise generation is suppressed. | 01-19-2012 |
| 20120008382 | MAGNETIC RECORDING ELEMENT - A magnetic recording element is disclosed for which current density required for writing is low and structure of the element is simple. It comprises a ferromagnetic fine wire formed on a Si substrate, current electrodes that contact ends of the ferromagnetic fine wire, and voltage electrodes joined to the ferromagnetic fine wire and current electrodes to measure voltage across part of the ferromagnetic fine wire in cooperation with the current electrodes. A magnetic domain wall is induced in the ferromagnetic fine wire when the element is manufactured. A depression is formed in the surface on top of the ferromagnetic fine wire between the voltage electrodes, and between one of the current electrodes and one of the voltage electrodes. Voltage is measured between the two voltage electrodes when reading current is applied, to determine whether the magnetic domain wall is present between the two voltage electrodes, whereby recorded data can be identified. | 01-12-2012 |
| 20120008346 | SEMICONDUCTOR INTEGRATED CIRCUIT AND SWITCHING POWER SUPPLY SYSTEM - A control circuit can be provided with a comparator detecting a turning-off of a semiconductor switch from a voltage generated in an auxiliary winding of a transformer and inputted to a zero current detecting terminal, a timer outputting a signal after a specified length of time from the time at which the turning-off of the semiconductor switch is detected, and a comparator detecting from voltages inputted to a current detecting terminal a second voltage signal different from an ordinary first voltage signal inputted when the semiconductor switch is made turned-on. Thus, the second voltage signal supplied from mode switching circuits as an externally inputted mode switching signal can be made also detected by the existing current detecting terminal. By detecting the second voltage signal after the specified length of time from the turning-off of the semiconductor switch, switching of an operation mode becomes possible without newly providing any specialized terminal. | 01-12-2012 |
| 20120007436 | ISOLATED OPERATION DETECTION DEVICE - With a method whereby reactive power is changed from a fluctuating output to a constant output by a frequency rise or fall monitor circuit stage level being exceeded, and an isolated operation is detected, a problem occurs with a small scale grid in that, as the frequency is liable to fluctuate due to a load fluctuation, there is liable to be a false detection of an isolated operation. In contrast, an abnormal frequency stage detection can be performed such that the frequency at a point when the rising edge of a reactive power fluctuation is detected, and the frequency at a point when the falling edge is detected, are detected sequentially, and an abnormal frequency stage detection is recognized when the order of the difference between the current detection value and the previous detection value is “increase”, “decrease”, “increase”. | 01-12-2012 |
| 20120001309 | SEMICONDUCTOR APPARATUS - A semiconductor apparatus according to aspects of the invention can include a metal base; resin case having a bonding plane facing metal base; a coating groove formed in bonding plane and holding adhesive for bonding resin case to metal base at a predetermined position, with the top plane of the wall that forms coating groove being spaced apart from the plane which contains bonding plane such that an escape space is formed between the metal base and the resin case; the escape space receiving the excess amount of adhesive which has flowed out from the coating groove; and a receiver groove communicating to the escape space and receiving securely the excess amount of adhesive which the escape space has failed to receive. If an excess amount of adhesive too much for the receiver groove to receive is coated, the excess amount of adhesive can be received in a stopper groove. | 01-05-2012 |
| 20120001227 | Power semiconductor module - A power semiconductor module includes a plurality of sets of semiconductor switching elements, a molded resin casing containing the semiconductor switching elements, screw holders for receiving mounting screws formed at bottom regions of four corners of the molded resin casing, first terminal blocks having main circuit terminals, and arranged on a central region of a top surface of the molded resin casing, and second terminal blocks having control terminals arranged at a side edge of the molded resin casing apart. Insulating separation walls having a configuration of a rib erect from a surface of the second terminal blocks, and are interposed between groups of the control terminals corresponding to the sets of semiconductor switching elements, and between the screw holder including the mounting screw therein on the molded resin casing and the control terminal at a high voltage side adjacent to the screw holder. | 01-05-2012 |
| 20110318910 | METHOD OF MANUFACTURING A SEMICONDUCTOR DEVICE - A method of manufacturing a semiconductor device that sufficiently activates a deep ion injection layer and fully recovers lattice defects generated in the ion injection process. Laser light pulses are successively emitted to form substantially CW (continuous wave) laser light. This feature of the invention stably performs activation of a deep ion injection layer at about 2 μs with few defects. | 12-29-2011 |
| 20110317315 | DRIVING DEVICE FOR SEMICONDUCTOR ELEMENT - A driving device for driving a semiconductor element can include a plurality of protection circuits that detect information necessary for performing protection operation for semiconductor elements that include a power conversion apparatus, a pulse signal generation circuit that sets a pulse sequence signal with a pulse width differently for each of the protection circuits and outputs a pulse sequence signal corresponding to the protection circuit that has been first detected a need for protection operation. The device can also include an alarm signal forming circuit that forms an alarm signal by ON-OFF control of a switching element and externally outputs the alarm signal, and a protection operation state discrimination circuit that discriminates existence of a protection operation state based on the alarm signal from the alarm signal forming circuit, and an alarm control circuit that delivers the pulse sequence signal outputted from the pulse signal generation circuit. | 12-29-2011 |
| 20110315658 | ALUMINUM OXIDE FILM REMOVER AND METHOD FOR SURFACE TREATMENT OF ALUMINUM OR ALUMINUM ALLOY - Disclosed herein is an aluminum oxide film remover for removing an oxide film on the surface of aluminum or aluminum alloy, which comprises silver ions and/or copper ions, a solubilizing agent for silver ions and/or copper ions, and a quaternary ammonium hydroxide compound, and has a pH value of 10 to 13.5. A method for surface treatment of aluminum or aluminum alloy is also disclosed, which comprises immersing a workpiece having aluminum or aluminum alloy at least on the surface thereof in the aluminum oxide film remover, and depositing the silver and/or copper contained in the remover on the surface of aluminum or aluminum alloy while removing the aluminum oxide film. | 12-29-2011 |
| 20110315187 | PHOTOVOLTAIC MODULE - One embodiment of the invention provides a photovoltaic module capable of preventing a reduction in insulation resistance. The photovoltaic module includes a photoelectric conversion element including a substrate and a photoelectric conversion layer that is formed on the substrate, a protective member that is adhered to a light incident surface of the photoelectric conversion element with a sealing member interposed therebetween and protects a light incident surface of the photovoltaic module, a reinforcing member that is adhered to a surface opposite to the light incident surface of the photovoltaic module with a sealing member interposed therebetween and protects the photovoltaic module, and an insulating sheet that is provided between the photoelectric conversion element and the reinforcing member to insulate the photoelectric conversion element. | 12-29-2011 |
| 20110311840 | METHOD FOR MANUFACTURING MAGNETIC RECORDING MEDIA - A method for manufacturing discrete track media and patterned media is disclosed which enables a magnetic recording layer having excellent magnetic characteristics to be obtained without imparting damage to a crystal orientation control layer which is at the surface when forming the magnetic recording layer. The method for manufacturing magnetic recording media comprises a process of forming a soft magnetic layer on a substrate; a process of forming a first crystal orientation control layer on the soft magnetic layer; a process of providing a depression in at least a portion of the first crystal orientation control layer; a process of performing heat treatment of the first crystal orientation control layer; and a process of forming a magnetic recording layer on the first crystal orientation control layer. | 12-22-2011 |
| 20110310660 | MAGNETORESISTANCE ELEMENT AND STORAGE DEVICE USING THE SAME - A magnetic memory element having a memory cell of size 4F | 12-22-2011 |
| 20110309850 | Testing device and testing method - A testing device includes a pressure vessel, a mounting stand disposed in an internal space of the pressure vessel, on which a device to be tested is mounted, test electrodes, disposed in the internal space of the pressure vessel, that supply a test voltage to the device to be tested mounted on the mounting stand, and a pressurization unit that raises the pressure of the internal space of the pressure vessel. The test voltage is supplied from the test electrodes to the device to be tested mounted on the mounting stand, and testing of the device to be tested is carried out, in a condition that the pressure of the internal space of the pressure vessel is raised by the pressurization unit. | 12-22-2011 |
| 20110309778 | Power converting device with reduced switching loss - A power converting device is disclosed that can reduce switching loss occurring in a voltage source inverter that drives an AC motor. It is possible to supply DC power to the voltage source inverter from both a voltage source rectifier, which converts AC power from an AC generator into DC power, and a battery. A first switching circuit is inserted between the voltage source rectifier and the AC generator, and the battery is connected to the output side of the voltage source rectifier. A second switching circuit is inserted between the battery and the voltage source inverter. A third switching circuit and a reactor are inserted in series between the input side of the voltage source inverter and the input side of the voltage source rectifier. At least one of an upper arm and a lower arm of the voltage source rectifier can be chopper controlled. | 12-22-2011 |
| 20110309527 | INSULATING MEMBER, METAL BASE SUBSTRATE, AND SEMICONDUCTOR MODULE, AND MANUFACTURING METHODS THEREOF - An insulating member of the invention can include an epoxy resin, a first inorganic filler diffused in the epoxy resin and having an average particle diameter of 1 to 99 nm, and a second inorganic filler diffused in the epoxy resin and having an average particle diameter of 0.1 to 100 μm. The first and second inorganic fillers can be independent of each other, and can be selected from a group including Al | 12-22-2011 |
| 20110303925 | Semiconductor device and the method of manufacturing the same - A semiconductor device according to the invention includes p-type well region 3 and n | 12-15-2011 |
| 20110303286 | Solar cell module - A solar cell module includes a metal plate, a solar cell that is fixed to the metal plate with sealing members interposed therebetween, and a surface protective film that covers the solar cell. A cutting process is performed on an outer portion of the solar cell, and the cut surface is covered with a non-solvent-based resin material. The solar cell module has a rectangular shape and the corners thereof are cut in an L-shape. Protruding piece portions formed by the cut-out portions are bent such that the solar cell module has a box shape. | 12-15-2011 |
| 20110298497 | COMPARATOR CIRCUIT - A comparator circuit can achieve a reduction in current consumption with a simple configuration, and can suppress an increase in current consumption accompanying a rise in power source voltage. A current mirror circuit is connected to a power source, and gates of MOSFETs of the circuit are interconnected. An input signal is applied to a gate of an NMOSFET of the circuit. By determining the value of the signal with a constant voltage device, the voltage across a tail resistor is constant, even in the event that the power source voltage and the input signal change. | 12-08-2011 |
| 20110291241 | SEMICONDUCTOR DEVICE - A semiconductor device that has a reduced size and exhibits a superior blocking voltage capability. A semiconductor device includes an edge termination structure between an active region and an isolation region, the edge termination structure being composed of an edge termination structure for a forward bias section and an edge termination structure for a reverse bias section. A plurality of field limiting rings (FLRs) and a plurality of field plates (FPs) are provided in the edge termination structure for the forward bias section and the edge termination structure for the reverse bias section. A first forward FP that is the nearest of the plurality of FPs to the edge termination structure for the reverse bias section is formed to extend towards the isolation region side. A first reverse FP that is the nearest of the plurality of FPs to the edge termination structure for the forward bias section is formed to extend towards the active region side. The first reverse FP stops the depletion layer expanding from the active region on application of a forward voltage. The first forward FP stops the depletion layer expanding from the isolation region on application of a reverse voltage. | 12-01-2011 |
| 20110291082 | ORGANIC LIGHT EMITTING ELEMENT - An organic light emitting element includes a pair of electrodes at least one of which has visible light transmittance; and an organic EL layer provided between the pair of electrodes. The organic EL layer includes at least an organic light emitting layer that emits light when a voltage is applied between the pair of electrodes. The organic light emitting layer includes an electron transport host material; and at least first and second guest materials. Each of the first and second guest materials has an emission peak in a blue to blue-green color region. The electron transport host material has an ionization potential (IPH) and an electron affinity (AFH), and the first guest material has an ionization potential (IPG1) and an electron affinity (AFG1) that satisfy Expression (1): IPH≦IPG1 and AFH| 12-01-2011 | |
| 20110287617 | METHOD OF MANUFACTURING SUPER-JUNCTION SEMICONDUCTOR DEVICE - A method of manufacturing a super-junction semiconductor device facilitates suppressing the shape change caused in the alignment mark in the upper epitaxial layer transferred from the alignment mark in the lower epitaxial layer to be small enough to detect the transferred alignment mark with a few additional steps, even if the epitaxial layer growth rate is high. Alignment mark groups, each formed of trenches including parallel linear planar patterns and used in any of the multiple epitaxial layer growth cycles, are formed collectively on a scribe line between semiconductor chip sections; and the mesa region width between the trenches in each alignment mark group indicated by the distance between the single-headed arrows, facing opposite to each other and drawn in alignment mark groups is set to be one fourth of the designed total epitaxial layer thickness at the end of each epitaxial layer growth cycle or longer. | 11-24-2011 |
| 20110287598 | METHOD OF MANUFACTURING SUPER-JUNCTION SEMICONDUCTOR DEVICE - A method of manufacturing a super-junction semiconductor device prevents mutual positional deviation between the region of the first conductivity type in the alternating conductivity type layer and the second trench for forming a trench gate from resulting. The method includes growing an alternating conductivity type layer epitaxially on a heavily doped n-type semiconductor substrate, the alternating conductivity type layer including n-type and p-type semiconductor regions arranged alternately and repeated such that n-type and p-type regions are adjoining each other, and arranged to extend perpendicular to the substrate's major surface. The method includes forming a first trench having a predetermined depth in the surface portion of n-type semiconductor region; forming an n-type thin layer on the inner surface of the first trench; and burying gate electrode in the space surrounded by the n-type thin layer with a gate insulator film interposed between a gate electrode and the n-type thin layer | 11-24-2011 |
| 20110281406 | SEMICONDUCTOR DEVICE MANUFACTURING METHOD - A manufacturing method is disclosed which ensures strength of a wafer and improves device performance. A thermal diffusion layer is formed from a front surface of a wafer. A tapered groove which reaches the thermal diffusion layer is formed from a back surface by anisotropic etching with alkaline solution. In-groove thermal diffusion layer is formed on side wall surfaces of the groove. A separation layer of a reverse blocking IGBT is configured of the thermal diffusion layer and the in-groove diffusion layer. The thermal diffusion layer is formed shallowly by forming the in-groove diffusion layer. It is possible to considerably reduce thermal diffusion time. By carrying out an ion implantation forming the in-groove diffusion layer and an ion implantation forming a collector layer separately, it is possible to select an optimum value for tradeoff between turn-on voltage and switching loss, while ensuring reverse blocking voltage of the reverse blocking IGBT. | 11-17-2011 |
| 20110279101 | SWITCHING POWER SUPPLY SYSTEM PROVIDED WITH UNDER VOLTAGE LOCK OUT CIRCUIT - A switching power supply system controlling switching operations of switching devices by a control circuit to convert an input voltage into a desired output voltage, the system being provided with a under voltage lock out circuit including: an input voltage detection unit detecting an input voltage and producing an input voltage digital signal corresponding to the input voltage Vin; and a voltage level comparison unit carrying out digital comparison of the input voltage digital signal with each of two voltage detection level data and outputting the results of the comparisons as an output signal, in which by changing voltage detection level data stored in two registers, desired voltage detection levels and hysteresis characteristic are easily actualized. | 11-17-2011 |
| 20110278643 | SEMICONDUCTOR UNIT AND SEMICONDUCTOR APPARATUS USING SAME - A semiconductor unit of certain aspects of the invention includes electrically conductive plates in the shape of the letter L, each consisting of a horizontally disposed leg portion and a vertically disposed flat body portion that is perpendicular to a cooling plate adhered to the bottom of the semiconductor unit. A pair of the vertically disposed flat body portions sandwiches a semiconductor chip. Owing to this construction, the heat generated in the semiconductor chip can be conducted away through the both surfaces of the chip, thus improving cooling performance. Since the heat is conducted away through the leg portions of the L-shaped electrically conductive plates a projected planar area occupied by the cooling plate required for cooling the semiconductor unit is reduced. Therefore, the size of the semiconductor unit can be reduced. | 11-17-2011 |
| 20110256668 | METHOD OF MANUFACTURING SEMICONDUCTOR APPARATUS - A method of manufacturing a semiconductor apparatus includes forming back surface electrode | 10-20-2011 |
| 20110256426 | VACUUM ARC EVAPORATION APPARATUS AND METHOD, AND MAGNETIC RECORDING MEDIUM FORMED THEREBY - In a vacuum arc evaporation apparatus, to stably maintain vacuum arc discharge at an arc source when depositing a cathode material on a substrate, namely a magnetic recording medium, an ungrounded anode of a coil-type tube is placed inside an arc source discharge vacuum chamber. A DC arc power supply is connected between the cathode and the anode to cause an arc current to flow in the anode to generate a first magnetic field in one direction, from the cathode toward the anode. A second magnetic field is generated in the opposite direction, from the anode to the cathode by feeding a specified current to an external coil positioned around the discharge chamber. The external coil includes an around-cathode coil and an around-anode coil. The arc discharge can be started by operating a striker to carry out the deposition. | 10-20-2011 |
| 20110249475 | GRID-CONNECTED INVERTER - A grid-connected inverter includes first and second power conversion circuits, a contactor and a control circuit. The first conversion circuit converts a first DC voltage to a second DC voltage. The second conversion circuit converts the second DC voltage to an AC voltage. The contactor connects an output side of the second conversion circuit to a power system. The control circuit includes a decision circuit and controls start and stop operations of the conversion circuits, and opening and closing of the contactor. The decision circuit decides whether a condition of the contactor is abnormal by detecting, after the control circuit controls the contactor to be open, whether or not a value of the second DC voltage is less than a threshold value, and if the value of the second DC voltage is detected to be not less than the threshold value, decides that the condition of the contactor is abnormal. | 10-13-2011 |
| 20110180909 | SEMICONDUCTOR DEVICE - A semiconductor device includes an n-type semiconductor substrate, an alternating conductivity type layer on semiconductor substrate, the alternating conductivity type layer including n-type drift regions and p-type partition regions arranged alternately, p-type channel regions on the alternating conductivity type layer, and trenches formed from the surfaces of the p-type channel regions down to respective n-type drift regions or both the n-type drift regions and the p-type partition regions. The bottom of each trench is near or over the pn-junction between the p-type partition region and the n-type drift region. The semiconductor device facilitates preventing the on-resistance from increasing, obtaining a higher breakdown voltage, and reducing the variations caused in the characteristics thereof. | 07-28-2011 |
| 20090166851 | Power semiconductor module - A power semiconductor module has a circuit assembly body, which includes a metal base, a ceramic substrate, and a power semiconductor chip, and is combined with a package having terminals formed integrally. The ceramic substrate of the module has a structure such that an upper circuit plate and a lower plate are joined to both sides of a ceramic plate, respectively, and the metal base and the ceramic substrate are fixed to one another using solder, thereby improving reliability and lengthening a life of a power semiconductor module by optimizing a ceramic substrate and a metal base thereof, the dimensions thereof, and material and method used for a join formed between the ceramic substrate and metal base. | 07-02-2009 |
| 20080303087 | Semiconductor device with integrated trench lateral power MOSFETs and planar devices - Gate electrodes of a TLPM and gate electrodes of planar devices are formed by patterning a same polysilicon layer. Drain electrode(s) and source electrode(s) of the TLPM and drain electrodes and source electrodes of the planar devices are formed by patterning a same metal layer. Therefore, the TLPM and the planar devices can be connected electrically to each other by resulting metal wiring layers and polysilicon layers without the need for performing wire bonding on a printed circuit board. | 12-11-2008 |
