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FOUNDATION FOR ADVANCEMENT OF INTERNATIONAL SCIENC E
| FOUNDATION FOR ADVANCEMENT OF INTERNATIONAL SCIENC E Patent applications | ||
| Patent application number | Title | Published |
|---|---|---|
| 20100059830 | Semiconductor device - In a semiconductor device, the degree of flatness of 0.3 nm or less in terms of a peak-to-valley (P-V) value is realized by rinsing a silicon surface with hydrogen-added ultrapure water in a light-screened state and in a nitrogen atmosphere and a contact resistance of 10 | 03-11-2010 |