| FORTUNE SEMICONDUCTOR CORPORATION Patent applications |
| Patent application number | Title | Published |
|---|
| 20120127671 | MULTI-CHIP MODULE - A multi-chip module is disclosed to include a pin frame, an electric power switch chip, and a battery protection chip. The pin frame has a chip placement region and six pins. The second pin and the fifth pin are electrically connected at the chip placement region, and the other pins are set electrically isolated from each other. A bottom surface of the electric power switch chip is electrically connected at the chip placement region, and a top surface thereof is electrically connected to the first pin and the third pin. A bottom surface of the battery protection chip is disposed at the top surface of the electric power switch chip in an electrically isolated fashion. A top surface of the battery protection chip is electrically connected to the top surface of the electric power switch chip, the first pin, the fourth pin, and the sixth pin. | 05-24-2012 |
| 20120119305 | LAYOUT OF POWER MOSFET - A layout of a power MOSFET includes a first zigzag gate structure located on a substrate of the power MOSFET and having a first side and a second side, a first contact located on the substrate and at the first side of the first zigzag gate structure, and a second contact structure located on the substrate and at the second side of the first zigzag gate structure. | 05-17-2012 |
| 20110233632 | SEMICONDUCTOR SEAL-RING STRUCTURE AND THE MANUFACTURING METHOD THEREOF - A seal-ring structure includes a substrate, a source/drain layer, a first dielectric layer, a first lower metal layer, a gate layer and a second lower metal layer. The source/drain layer is disposed within the substrate. The first dielectric layer is disposed over the substrate. The first lower metal layer is disposed over the first dielectric layer and coupled to the source/drain layer via a first contact. The gate layer is disposed within the first dielectric layer. The second lower metal layer is disposed over the first dielectric layer and coupled to the gate layer via a second contact. | 09-29-2011 |
| 20110180922 | SEMICONDUCTOR CHIP, SEAL-RING STRUCTURE AND MANUFACTURING PROCESS THEREOF - A semiconductor chip includes an integrated circuit region, at least one alignment indicator region and a seal-ring. The alignment indicator region is disposed near the integrated circuit region. The seal-ring surrounding the integrated circuit region is disposed outside of the integrated circuit region, and is formed as a mark for alignment on the alignment indicator region at a corner of the semiconductor chip. A manufacturing process of the seal-ring structure is also disclosed. | 07-28-2011 |
