FORMOSA MICROSEMI CO., Ltd. Patent applications |
Patent application number | Title | Published |
20130241056 | WELL-THROUGH TYPE DIODE ELEMENT/COMPONENT AND MANUFACTURING METHOD FOR THEM - A well-through type diode element/component manufacturing method which has a pair (pairs) of first and said second electrodes of a diode element/component built on same plane by a process of metallization after a mode of well-through type to penetrate a PN junction depletion region/barrier region, and leads electrons of one of the electrodes to flow through the Depletion/Barrier region without hindrance; the present invention directly conduct the operations of insulation protecting, metallization and the process of elongate welding ball etc., it can independently complete a novel technique of Chip-Scale Package (CSP); it has the features of: grains being exactly the article produced, no need of connecting lines, low energy consumption, low cost and light, thin and small etc. | 09-19-2013 |
20130075891 | FLIP CHIP TYPE FULL WAVE RECTIFICATION SEMICONDUCTOR DEVICE AND ITS MANUFACTURING METHOD - This invention reveals a flip-chip type full-wave rectification semiconductor device which includes at least a PNNP type and/or NPPN type flip-chip, and a sheet stuff or substrate including a plurality pins, and which is characterized in that: all the soldering points (bumps) of the PNNP type and/or the NPPN type flip-chip are on an identical surface, this can make easy connecting of the pins with the bumps of the flip-chips by soldering in pursuance of circuit arrangement of the full-wave rectification device, and complete manufacturing product after the steps of shaping/packing and cutting; such product has a function of making full-wave rectifying, and can simplify the manufacturing process, reduce the manufacturing cost, and get an effect of reducing the size of the product with better heat dissipation, being different from traditional full wave rectification semiconductor devices composed of two/four grains. | 03-28-2013 |
20110272777 | Manufacturing method and structure of a surface-mounting type diode co-constructed from a silicon wafer and a base plate - A manufacturing method and a structure of a surface-mounting type diode co-constructed from a silicon wafer and a base plate, in the method, a diffused wafer is stacked with a high temperature durable high strength base plate to have them sintered and molten together for connecting with each other to form a co-constructure; then the diffused wafer is processed by etching and ditching for filling with insulation material, electrodes of the diffused wafer are metalized and all on an identical plane, then production of all functional lines is completed; and then the co-constructure is cut to form a plurality of separated individuals which each forms a surface-mounting type diode to be applied straight. In comparison with the conventional techniques, manufacturing of the present invention is simplified and economic in reducing working hours, size and cost of production and the wafer is not subjected to breaking during manufacturing. | 11-10-2011 |