FORCE MOS TECHNOLOGIES CO., LTD.
FORCE MOS TECHNOLOGIES CO., LTD. Patent applications | ||
Patent application number | Title | Published |
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20120187477 | SUPER-JUNCTION TRENCH MOSFET WITH MULTIPLE TRENCHED SOURCE-BODY CONTACTS - A super-junction trench MOSFET with split gate electrodes is disclosed for high voltage device by applying multiple trenched source-body contacts with narrow CDs in unit cell. Furthermore, source regions are only formed along channel regions near the gate trenches, not between adjacent trenched source-body contacts for UIS (Unclamped Inductance Switching) current enhancement | 07-26-2012 |