| Fairfield Crystal Technology, LLC Patent applications |
| Patent application number | Title | Published |
|---|
| 20120086001 | METHOD FOR PRODUCTION OF ZINC OXIDE SINGLE CRYSTALS - The disclosed subject matter includes a method of producing zinc oxide (ZnO) single crystals in an enclosure. The ZnO single crystals have a low concentration of lithium and hydrogen impurities. | 04-12-2012 |
| 20110101502 | COMPOSITE WAFERS AND SUBSTRATES FOR III-NITRIDE EPITAXY AND DEVICES AND METHODS THEREFOR - A composite wafer comprises a single crystal substrate having first and second sides; a first III-nitride single crystal layer disposed on the first side of the substrate and being defined by a thickness; and a second III-nitride single crystal layer disposed on the second side of the single crystal substrate and being defined by a thickness. The thickness of each III-nitride single crystal layer is substantially the same. The composite wafer may be used in the manufacture of a semiconductor device or a freestanding wafer. | 05-05-2011 |
| 20100084664 | ZINC SULFIDE SUBSTRATES FOR GROUP III-NITRIDE EPITAXY AND GROUP III-NITRIDE DEVICES - A semiconductor structure includes a substrate which may be formed from a ZnS single crystal of wurtzite (2H) structure with a predetermined crystal orientation, and which has a first surface and a second surface. The structure includes a layer of a group III-nitride crystalline material deposited as an epitaxial layer on the first surface of the substrate. In one embodiment, the group III-nitride deposit is epitaxially grown using a MOCVD (or MOVPE) technique or a HVPE technique or a combination thereof. There may be a mask and/or a buffer layer on the first surface and/or a protective layer on the second surface. | 04-08-2010 |
