| 20110263086 | METHOD FOR FORMING POWER DEVICES WITH CARBON-CONTAINING REGION - A method of forming a field effect transistor (FET) includes forming a carbon-containing region over a substrate. An epitaxial layer is formed over the carbon-containing region. The epitaxial layer has a lower doping concentration than the substrate. A body region of a first conductivity type is formed in the epitaxial layer. The epitaxial layer is of a second conductivity type and forms a p-n junction with the body region. Gate electrodes are formed adjacent to but insulated from the body regions. Source regions of the second conductivity type are formed in the body regions. The source regions form p-n junctions with the body regions. | 10-27-2011 |
