| EVERSPIN TECHNOLOGIES, INC. Patent applications |
| Patent application number | Title | Published |
|---|
| 20120122247 | ELECTRONIC DEVICE INCLUDING A MAGNETO-RESISTIVE MEMORY DEVICE AND A PROCESS FOR FORMING THE ELECTRONIC DEVICE - A process of forming an electronic device can include forming a stack including a tunnel barrier layer. The tunnel barrier layer can have a ratio of the metal atoms to oxygen atoms of greater than a stoichiometric ratio, wherein the ratio has a particular value. The process can also include forming a gettering layer having a composition capable of gettering oxygen, and depositing an insulating layer over the gettering layer. The process can further include exposing the insulating layer to a temperature of at least approximately 60° C. In one embodiment, after such exposure, a portion of the gettering layer is converted to an insulating material. In another embodiment, an electronic device can include a magnetic tunnel junction and an adjacent insulating layer lying within an opening in another insulating layer. | 05-17-2012 |
| 20120081950 | STRUCTURES AND METHODS FOR A FIELD-RESET SPIN-TORQUE MRAM - An apparatus and method of programming a spin-torque magnetoresistive memory array includes a conductive reset line positioned near each of a plurality of magnetoresistive bits and configured to set the plurality of magnetoresistive memory elements to a known state having magnetization perpendicular to the film plane of the magnetoresistive bits by generating a magnetic field when an electrical current flows therethrough. The conductive reset line is positioned such that the magnetic field is applied with a predominant component perpendicular to the film plane when an electrical current of predetermined magnitude, duration, and direction flows through the first conductive reset line. Another conductive reset line may be positioned wherein the magnetic field is created between the two conductive reset lines. A permeable ferromagnetic material may be positioned around a portion of the conductive reset line or lines to focus the magnetic field in the desired direction by positioning edges of permeable ferromagnetic material on opposed sides of the film plane. A spin torque transfer current is applied to selected ones of the magnetoresistive bits to switch the selected bit to a programmed state. | 04-05-2012 |
| 20120015099 | STRUCTURE AND METHOD FOR FABRICATING A MAGNETIC THIN FILM MEMORY HAVING A HIGH FIELD ANISOTROPY - A method for depositing uniform and smooth ferromagnetic thin films with high deposition-induced microstructural anisotropy includes a magnetic material deposited in two or more static oblique deposition steps from opposed directions to form a free layer having a high kink Hk, a high energy barrier to thermal reversal, a low critical current in spin-torque switching embodiments, and improved resistance to diffusion of material from adjacent layers in the device. Nonmagnetic layers deposited by the static oblique deposition technique may be used as seed layers for a ferromagnetic free layer or to generate other types of anisotropy determined by the deposition-induced microstructural anisotropy. Additional magnetic or non-magnetic layers may be deposited by conventional methods adjacent to oblique layer to provide magnetic coupling control, reduction of surface roughness, and barriers to diffusion from additional adjacent layers in the device. | 01-19-2012 |
| 20110292714 | STRUCTURES AND METHODS FOR A FIELD-RESET SPIN-TORQUE MRAM - An apparatus and method of programming a spin-torque magnetoresistive memory array includes a metal reset line positioned near each of a plurality of magnetoresistive bits and configured to set the plurality of magnetoresistive memory elements to a known state by generating a magnetic field when an electrical current flows through it. A spin torque transfer current is then applied to selected ones of the magnetoresistive bits to switch the selected bit to a programmed state. In another mode of operation, a resistance of the plurality of bits is sensed prior to generating the magnetic field. The resistance is again sensed after the magnetic field is generated and the data represented by the initial state of each bit is determined from the resistance change. A spin torque transfer current is then applied only to those magnetoresistive bits having a resistance different from prior to the magnetic field being applied. | 12-01-2011 |
| 20110244599 | PROCESS INTEGRATION OF A SINGLE CHIP THREE AXIS MAGNETIC FIELD SENSOR - A semiconductor process integrates three bridge circuits, each include magnetoresistive sensors coupled as a Wheatstone bridge on a single chip to sense a magnetic field in three orthogonal directions. The process includes various deposition and etch steps forming the magnetoresistive sensors and a plurality of flux guides on one of the three bridge circuits for transferring a “Z” axis magnetic field onto sensors orientated in the XY plane. | 10-06-2011 |
| 20110169488 | METHOD AND STRUCTURE FOR TESTING AND CALIBRATING MAGNETIC FIELD SENSING DEVICE - A method of sensing a magnetic field including at least one magnetoresistive sensing element ( | 07-14-2011 |
| 20110147867 | METHOD OF VERTICALLY MOUNTING AN INTEGRATED CIRCUIT - A method of mounting a first integrated circuit ( | 06-23-2011 |
| 20110121826 | Two-Axis Magnetic Field Sensor with Multiple Pinning Directions - A fabrication process and apparatus provide a high-performance magnetic field sensor ( | 05-26-2011 |
| 20110074406 | THREE AXIS MAGNETIC FIELD SENSOR - Three bridge circuits ( | 03-31-2011 |
| 20110062538 | MAGNETIC ELEMENT HAVING REDUCED CURRENT DENSITY - A memory device includes a fixed magnetic layer, a tunnel barrier layer over the fixed magnetic layer, and a free magnetic structure formed over the tunnel barrier layer, wherein the free magnetic structure has layers or sub-layers that are weakly magnetically coupled. Thus, a low programming voltage can be used to avoid tunnel barrier breakdown, and a small pass transistor can be used to save die real estate. | 03-17-2011 |
| 20100277971 | METHOD FOR REDUCING CURRENT DENSITY IN A MAGNETOELECTRONIC DEVICE - A method for reducing spin-torque current density needed to switch a magnetoelectronic device ( | 11-04-2010 |
| 20100276389 | TWO-AXIS MAGNETIC FIELD SENSOR WITH SUBSTANTIALLY ORTHOGONAL PINNING DIRECTIONS - A fabrication process and apparatus provide a high-performance magnetic field sensor ( | 11-04-2010 |
| 20100213933 | MAGNETIC FIELD SENSING DEVICE - A magnetic field sensing device for determining the strength of a magnetic field, includes four magnetic tunnel junction elements or element arrays ( | 08-26-2010 |
| 20100197043 | STRUCTURE AND METHOD FOR FABRICATING CLADDED CONDUCTIVE LINES IN MAGNETIC MEMORIES - A method of forming a magnetoelectronic device includes forming a dielectric material ( | 08-05-2010 |
| 20100165710 | Random access memory architecture including midpoint reference - A random access memory architecture includes a first series connected pair of memory elements ( | 07-01-2010 |
| 20100148167 | MAGNETIC TUNNEL JUNCTION STACK - A magnetic tunnel junction ( | 06-17-2010 |
