| EUGENE TECHNOLOGY CO., LTD. Patent applications |
| Patent application number | Title | Published |
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| 20110028001 | SUBSTRATE PROCESSING APPARATUS AND METHOD - Disclosed is a substrate processing apparatus and method. The substrate processing apparatus includes a process chamber ( | 02-03-2011 |
| 20110021034 | SUBSTRATE PROCESSING APPARATUS AND METHOD - Disclosed is a substrate processing apparatus and method. The substrate processing apparatus includes a chamber ( | 01-27-2011 |
| 20110014397 | APPARATUS AND METHOD FOR PROCESSING SUBSTRATE - A substrate processing apparatus includes a chamber defining a process space where a process is carried out with respect to a substrate, a first supply member configured to supply a first source gas toward the process space, a plasma source configured to generate an electric field in the process space to create radicals from the first source gas, and a second supply member located below the first supply member for supplying a second source gas toward the substrate. A support member is installed in the chamber. The second supply member has a supply nozzle disposed, such that a lower end of the supply nozzle corresponds to a center of the substrate placed on the support member, for supplying the second source gas toward the center of the substrate. | 01-20-2011 |
| 20110000618 | APPARATUS AND METHOD FOR PROCESSING SUBSTRATE - A substrate processing apparatus includes a chamber defining a creation space where radicals are created and a process space where a process is carried out with respect to a substrate, a first supply member configured to supply a first source gas into the creation space, an upper plasma source configured to generate an electric field in the creation space to create the radicals from the first source gas, a second supply member configured to supply a second source gas into the process space, and a lower plasma source configured to generate an electric field in the process space. The upper plasma source includes a first segment and a second segment configured to wrap a side of the chamber. The first and second segments are alternately disposed in the vertical direction of the chamber. | 01-06-2011 |
| 20100330301 | APPARATUS AND METHOD FOR PROCESSING SUBSTRATE - A substrate processing apparatus includes a chamber defining a process space where a process is carried out with respect to a substrate, a first supply member located above the process space for supplying a first source gas toward the process space, a plasma source configured to generate an electric field in the process space to create radicals from the first source gas, and a second supply member configured to supply a second source gas above the substrate. The chamber includes a lower chamber in which a support member configured to allow the substrate to be placed thereon is installed. The lower chamber is open at a top thereof. The second supply member is installed at an upper end of the lower chamber for supplying the second source gas in a direction generally parallel to the substrate placed on the support member. The second source gas may be a silicon-containing gas. | 12-30-2010 |
| 20100319855 | SUBSTRATE SUPPORTING UNIT, SUBSTRATE PROCESSING APPARATUS, AND METHOD OF MANUFACTURING SUBSTRATE SUPPORTING UNIT - Disclosed are a substrate supporting unit, a substrate processing apparatus, and a method of manufacturing the substrate supporting unit. The substrate supporting unit includes a susceptor ( | 12-23-2010 |
| 20100319621 | PLASMA PROCESSING APPARATUS AND PLASMA PROCESSING METHOD - A plasma processing apparatus includes a chamber providing an interior space where a process is performed upon a target; and a plasma generating unit generating an electric field in the interior space to generate plasma from a source gas supplied to the interior space. The plasma generating unit includes an upper source disposed substantially parallel to an upper surface of the chamber, an upper generator connected to the upper source to supply a first current to the upper source, a lateral source surrounding a lateral side of the chamber, and a lateral generator connected to the lateral source to supply a second current to the lateral source. The plasma generating unit further includes an upper matcher disposed between the upper generator and the upper source, and a lower matcher disposed between the lateral generator and the lateral source. | 12-23-2010 |
| 20100276393 | PLASMA PROCESSING APPARATUS AND METHOD - A plasma processing apparatus includes a chamber to provide an inner area in which a process is performed upon an object, and a plasma source to generate an electric field in the inner area and thereby to generate plasma from a source gas supplied in the inner area, wherein the plasma source comprises a top source provided in the top of the chamber, and a side source encompassing the side of the chamber and allowing current to flow from the one side of the chamber to the other side thereof. | 11-04-2010 |
| 20100206231 | EXHAUST UNIT, EXHAUST METHOD USING THE EXHAUST UNIT, AND SUBSTRATE PROCESSING APPARATUS INCLUDING THE EXHAUST UNIT - A substrate processing apparatus includes a chamber having an inner space where a process is carried out with respect to a substrate and an exhaust unit for exhausting substance in the inner space to the outside. The exhaust unit includes a first exhaust plate located at an upstream of an exhaust path of the substance, the first exhaust plate having first exhaust holes, and a second exhaust plate located at a downstream of the exhaust path, the first exhaust plate having second exhaust holes. The first exhaust plate is disposed outside a support member, and the second exhaust plate is disposed below the first exhaust plate generally in parallel to the first exhaust plate. The exhaust unit further includes first covers for selectively opening and closing the first exhaust holes and second covers for selectively opening and closing the second exhaust holes. | 08-19-2010 |
| 20100196625 | SHOWERHEAD, SUBSTRATE PROCESSING APPARATUS INCLUDING THE SHOWERHEAD, AND PLASMA SUPPLYING METHOD USING THE SHOWERHEAD - A showerhead includes a first ring having an inner spray port formed therein, a second ring configured to surround the first ring, the second ring being disposed outside the first ring such that the second ring is spaced apart from the first ring, and a connection member for interconnecting the first ring and the second ring. An outer spray port is formed between the first ring and the second ring. The showerhead further includes a third ring disposed in the inner spray port formed in the first ring and a fourth ring disposed in the outer spray port formed between the first ring and the second ring. The third ring has an innermost spray port formed therein, and the fourth ring has an outermost spray port formed at the outside thereof. | 08-05-2010 |
| 20100175622 | SUBSTRATE PROCESSING APPARATUS - A substrate processing apparatus includes a chamber defining an inner space where a process is carried out with respect to a substrate, a support member disposed in the chamber for supporting the substrate, and a guide tube disposed above the support member for guiding plasma generated in the inner space to the substrate on the support member. The guide tube is configured in the shape of a cylinder having a sectional shape substantially corresponding to the shape of the substrate, and the guide tube discharges the plasma introduced through one end thereof to the support member through the other end thereof. The chamber includes a process chamber in which the support member is disposed and a generation chamber disposed above the process chamber. The process is carried out by the plasma in the process chamber, and the plasma is generated by a coil in the generation chamber. | 07-15-2010 |
| 20100035417 | METHOD OF FABRICATING POLYCRYSTALLINE SILICON THIN FILM - The present invention relates to a method of depositing a polycrystalline silicon thin film within a single chamber through a chemical vapor deposition (CVD) process employing a single wafer technique. Particularly, a fine crystalline structure of the polycrystalline silicon thin film is formed in a columnar shape by using SiH | 02-11-2010 |
| 20090218331 | PARTITION-TYPE HEATING APPARATUS - A partition-type heating apparatus has advantageous effects in that a material to be heated, i.e., a reaction gas used in a chemical vapor deposition (CVD) process, is pre-heated and the pre-heated reaction gas flows through a flow channel defined by the vertical and horizontal partitions so that the flowing reaction gas is heated by the transfer of heat generated from a hot wire during the flow of the reaction gas, thereby securing heating performance required for a small-sized heating apparatus. | 09-03-2009 |
