| EUDYNA DEVICES INC. Patent applications |
| Patent application number | Title | Published |
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| 20120097984 | OPTICAL SEMICONDUCTOR DEVICE, LASER CHIP AND LASER MODULE - An optical semiconductor device has a semiconductor substrate, an optical semiconductor region and a heater. The optical semiconductor region is provided on the semiconductor substrate and has a width smaller than that of the semiconductor substrate. The heater is provided on the optical semiconductor region. The optical semiconductor region has a cladding region, an optical waveguide layer and a low thermal conductivity layer. The optical waveguide layer is provided in the cladding region and has a refractive index higher than that of the cladding region. The low thermal conductivity layer is provided between the optical waveguide layer and the semiconductor substrate and has a thermal conductivity lower than that of the cladding region. | 04-26-2012 |
| 20110217816 | FIELD EFFECT TRANSISTOR AND METHOD FOR FABRICATING THE SAME - A field effect transistor includes: a nitride semiconductor layer having a channel layer; a gate electrode including a Schottky electrode that contacts the nitride semiconductor layer and includes a gallium doped zinc oxide | 09-08-2011 |
| 20110215383 | FIELD EFFECT TRANSISTOR AND METHOD FOR FABRICATING THE SAME - A method for fabricating a field effect transistor includes: forming an insulating film provided on a semiconductor layer, the insulating film having an opening via which a surface of the semiconductor layer is exposed and including silicon oxide; forming a Schottky electrode on the insulating film and in the opening, the Schottky electrode having an overhang portion and having a first contact layer that is provided in a region contacting the insulating film and contains oxygen, and a second contact layer that is provided on the first contact layer and contains a smaller content of oxygen than that of the first contact layer; and removing the insulating film by a solution including hydrofluoric acid | 09-08-2011 |
| 20110158269 | LASER MODULE, CONTROL METHOD OF THE SAME, CONTROL DATA OF THE SAME, AND CONTROL DATA GENERATION METHOD - A laser module includes a semiconductor laser, an output optical system provided on an optical output side of the semiconductor laser, a temperature detecting element that detects a temperature of the output optical system; and an output controller that calculates a drive current to set an optical output intensity of the laser module at a desired value on the basis of temperature information obtained by the temperature detecting element, and outputs the drive current to the semiconductor laser. | 06-30-2011 |
| 20110133206 | Compound semiconductor device - At a gate electrode formed on a compound semiconductor layer with a Schottky junction, a diffusion preventing layer made of Ti | 06-09-2011 |
| 20110096804 | OPTICAL SEMICONDUCTOR DEVICE AND METHOD OF CONTROLLING THE SAME - An optical semiconductor device includes a waveguide having one or more first segments having a region that includes a diffractive grating and another region combined to the region, one or more second segments having a region that includes a diffractive grating and another region combined to the region and a plurality of third segments having a region the includes a diffractive grating and another region combined to the region, a length of the second segment being different from that of the first segment, a length of the third segment being shown as L | 04-28-2011 |
| 20100151620 | PIN-TYPE PHOTO DETECTING ELEMENT WITH THREE SEMICONDUCTOR LAYERS, AND WINDOW SEMICONDUCTOR LAYER HAVING CONTROLLED THICKNESS - A semiconductor photo detecting element includes a PIN-type photo detecting element and window semiconductor layer. The PIN-type photo detecting element has a semiconductor substrate, a first semiconductor layer, a second semiconductor layer and a third semiconductor layer. The first semiconductor layer is provided on the semiconductor substrate, is lattice-matched to the semiconductor substrate, includes a first conductivity type dopant, and has first band gap energy. The second semiconductor layer is provided on the first semiconductor layer, has the first band gap energy, and has a concentration of the first conductivity type dopant lower than that of the first semiconductor layer or is substantially undoped. The third semiconductor layer is provided on the second semiconductor layer. The window semiconductor layer has second band gap energy larger than the first band gap energy at a light-incoming side with respect to the second semiconductor layer and has a thickness of 5 nm to 50 nm. | 06-17-2010 |
| 20100091805 | OPTICAL SEMICONDUCTOR ELEMENT AND OPTICAL SEMICONDUCTOR DEVICE - An optical semiconductor device includes an optical semiconductor element, a metal pattern and at least one thermal conductive material. The optical semiconductor element has a first optical waveguide region and a second optical waveguide region. The second optical waveguide region is optically coupled to the first optical waveguide region and has a heater for changing a refractive index of the second optical waveguide region. The metal pattern is provided on an area to be thermally coupled to a temperature control device. The thermal conductive material couples the metal pattern with an upper face of the first optical waveguide region of the optical semiconductor element. The thermal conductive material is electrically separated from the first optical waveguide region. | 04-15-2010 |
| 20100081241 | SEMICONDUCTOR DEVICE AND FABRICATION METHOD THEREFOR, CAPACITIVE ELEMENT AND FABRICATION METHOD THEREFOR, AND MIS TYPE SEMICONDUCTOR DEVICE AND FABRICATION METHOD THEREFOR - A semiconductor device includes an operating layer made of a semiconductor and a silicon nitride film formed on the operating layer with the use of a mixed gas that includes mono-silane gas, hydrogen gas, and nitrogen gas, by a plasma CVD apparatus, under a condition that a flow rate of the hydrogen gas is 0.2 percent to 5 percent to an overall flow rate. | 04-01-2010 |
| 20100040101 | Optical Semiconductor Device - An optical semiconductor device has a semiconductor substrate, a semiconductor region and heater. The semiconductor region has a stripe shape demarcated with a top face and a side face thereof. The stripe shape has a width smaller than a width of the semiconductor substrate. An optical waveguide layer is located in the semiconductor region. A distance from a lower end of the side face of the semiconductor region to the optical waveguide layer is more than half of the width of the semiconductor region. The heater is provided above the optical waveguide layer. | 02-18-2010 |
| 20100034224 | TUNABLE LASER MODULE, TUNABLE LASER APPARATUS AND CONTROLLING METHOD FOR TUNABLE LASER - A tunable laser module includes a tunable laser section including a gain medium and a wavelength filter having a periodic characteristic which brings about a discontinuous variation of an oscillation wavelength, and a monitoring section adapted to output a monitoring signal which periodically varies in response to the oscillation wavelength of the tunable laser section. The monitoring section includes a monitoring wavelength filter having a periodic characteristic which defines the monitoring signal. The relationship between the period of the wavelength filter and the period of the monitoring wavelength filter is set such that the monitoring signal varies when the oscillation wavelength varies discontinuously. | 02-11-2010 |
| 20100022044 | LASER DEVICE, LASER MODULE, SEMICONDUCTOR LASER AND FABRICATION METHOD OF SEMICONDUCTOR LASER - A semiconductor laser has first and second diffractive grating regions. The first diffractive grating region has segments, has a gain, and has first discrete peaks of a reflection spectrum. The second diffractive grating region has segments combined to each other, and has second discrete peaks of a reflection spectrum. Each segment has a diffractive grating and a space region. Pitches of the diffractive grating are substantially equal to each other. A wavelength interval of the second discrete peaks is different from that of the first discrete peaks. A part of a given peak of the first discrete peaks is overlapped with that of the second discrete peaks when a relationship between the given peaks of the first discrete peaks and the second discrete peaks changes. A first segment located in the first diffractive grating region or the second diffractive grating region has an optical length shorter or longer than the other segments of the first diffractive grating region and the second diffractive grating region by odd multiple of half of the pitch of the diffractive grating of the first diffractive grating region. | 01-28-2010 |
| 20090176352 | Semiconductor device, method of manufacturing the same, and substrate for manufacturing the same - A semiconductor device includes a substrate, a buffer layer that is formed with an aluminum nitride layer on the substrate and has a film thickness of 5 nm to 40 nm, an operating layer that is formed with a gallium nitride-based semiconductor on the buffer layer, and a control electrode that is formed on the operating layer. | 07-09-2009 |
| 20090168817 | TESTING METHOD OF WAVELENGTH-TUNABLE LASER, CONTROLLING METHOD OF WAVELENGTH-TUNABLE LASER AND LASER DEVICE - A testing method of a wavelength-tunable laser having a resonator including wavelength selection portions having wavelength property different from each other includes a first step of controlling the wavelength-tunable laser so as to oscillate at a given wavelength according to an initial setting value, a second step of tuning the wavelength property of the wavelength selection portions and detecting discontinuity point of gain-condition-changing of the wavelength-tunable laser, and a third step of obtaining a stable operating point of the wavelength selection portion according to a limiting point of an oscillation condition at the given wavelength, the limiting point being a point when the discontinuity point is detected. | 07-02-2009 |
| 20090103585 | Optical semiconductor element and optical semiconductor device - An optical semiconductor device includes an optical semiconductor element, a metal pattern and at least one thermal conductive material. The optical semiconductor element has a first optical waveguide region and a second optical waveguide region. The second optical waveguide region is optically coupled to the first optical waveguide region and has a heater for changing a refractive index of the second optical waveguide region. The metal pattern is provided on an area to be thermally coupled to a temperature control device. The thermal conductive material couples the metal pattern with an upper face of the first optical waveguide region of the optical semiconductor element. The thermal conductive material is electrically separated from the first optical waveguide region. | 04-23-2009 |
| 20090098676 | METHOD OF MANUFACTURING LIGHT EMITTING DIODE - A method of manufacturing a light emitting diode includes forming an active layer of a nitride semiconductor on a first conductive type of a nitride semiconductor layer, thermally treating the active layer at a first temperature, and forming a second conductive type of a nitride semiconductor layer on the active layer at a second temperature lower than the first temperature. | 04-16-2009 |
| 20090028203 | OPTICAL SEMICONDUCTOR DEVICE AND METHOD FOR MANUFACTURING THE SAME - A method for manufacturing a semiconductor device having a compound semiconductor layer that is provided on a substrate and includes a cladding layer of a first conductivity type, an activation layer, a cladding layer of a second conductivity type that is the opposite of the first conductivity type, includes the steps of: forming a diffusion source layer on the compound semiconductor layer; forming a first diffusion region in the compound semiconductor layer by carrying out a first heat treatment, so that the first diffusion region includes a light emitting facet for emitting light from the activation layer; removing the diffusion source layer; forming a first SiN film having a refractive index of 1.9 or higher on the compound semiconductor layer; and turning the first diffusion region into the second diffusion region by carrying out a second heat treatment. | 01-29-2009 |
| 20090028200 | LASER DIODE DRIVE CIRCUIT, ELECTRONIC CIRCUIT, METHOD FOR CONTROLLING LASER DIODE DRIVE CIRCUIT, AND METHOD FOR CONTROLLING DUTY - A laser diode drive circuit includes: a duty control amplifier ( | 01-29-2009 |
| 20090026498 | FIELD EFFECT TRANSISTOR AND METHOD FOR FABRICATING THE SAME - A field effect transistor includes: a nitride semiconductor layer having a channel layer; a gate electrode including a Schottky electrode that contacts the nitride semiconductor layer and includes a gallium doped zinc oxide (GZO) layer annealed in an inactive gas atmosphere; and ohmic electrodes connecting with the channel layer. | 01-29-2009 |
| 20090022186 | METHOD OF CONTROLLING SEMICONDUCTOR LASER - A method of controlling a semiconductor laser that has a plurality of wavelength selection portions having a different wavelength property from each other and is mounted on a temperature control device, including: a first step of correcting a temperature of the temperature control device according to a detected output wavelength of the semiconductor laser; and a second step of controlling at least one of the wavelength selection portions so that changing amount differentials between each wavelength property of the plurality of the wavelength selection portions is reduced, the changing amount differential being caused by correcting the temperature of the temperature control device. | 01-22-2009 |
| 20090022185 | METHOD OF CONTROLLING SEMICONDUCTOR LASER - A method of controlling a semiconductor laser having a wavelength selection portion, a refractive index of the wavelength selection portion being controllable with a heater including: a starting sequence including a first step for adjusting a heat value of the heater until the heat value of the heater reaches a given value; and a wavelength control sequence including a second step for correcting a wavelength of the semiconductor laser according to a detection result of an oscillation wavelength of the semiconductor laser after the starting sequence. | 01-22-2009 |
| 20090021238 | OPTICAL DEVICE AND METHOD OF CONTROLLING THE SAME - An optical device includes an optical element, a detector and a controller. The optical element has an optical waveguide. Refractive index of the optical waveguide is controlled by a heater. A temperature of the optical element is controlled by a temperature control device. The detector detects a current flowing in the heater and/or a voltage applied to the heater. The controller controls an electrical power provided to the heater so as to be kept constant according to the detection result of the detector. | 01-22-2009 |
| 20090009246 | ELECTRONIC CIRCUIT - An electronic circuit includes a differential amplifier circuit, a first smoothing circuit, a second smoothing circuit and a first switch. The differential amplifier circuit receives a digital input signal and a reference signal. The first smoothing circuit smoothes the digital input signal with a first capacitance value. The second smoothing circuit smoothes the digital input signal with a second capacitance value larger than the first capacitance value. The first switch selects one of output signals from the first smoothing circuit and the second smoothing circuit as the reference signal. | 01-08-2009 |
| 20080315078 | Wavelength measuring device, light receiving unit, and wavelength measuring method - A wavelength measuring device includes: light receiving elements that receive light to be measured; a temperature controller that maintains the light receiving elements at different temperatures from one another; and a calculation unit that determines the wavelength of the light to be measured, based on outputs of the light receiving elements. | 12-25-2008 |
| 20080292250 | OPTICAL COMMUNICATION MODULE AND OPTICAL COMMUNICATION MODULE HOLDER - An optical communication module includes a receptacle, a chassis and a pressing jig. The receptacle has a photonic device therein and a projection portion. The chassis houses the receptacle. The pressing jig has an engage portion. The engage portion is latched with the chassis with the pressing jig pressing the projection portion of the receptacle to the chassis. | 11-27-2008 |
| 20080283822 | SEMICONDUCTOR LIGHT EMITTING DEVICE - A semiconductor light emitting device includes a substrate and a quantum well active layer. The quantum well active layer has a plurality of barrier layers made of GaN-based semiconductor and a well layer made of GaN-based semiconductor sandwiched between the barrier layers and has polarized charge between the barrier layer and the well layer caused by piezo polarization. The well layer has a composition modulation so that a band gap is minimum at an interface between the well layer and one of the barrier layers more far from the substrate than the other. | 11-20-2008 |
| 20080247707 | OPTICAL SEMICONDUCTOR DEVICE AND METHOD OF CONTROLLING THE SAME - An optical semiconductor device includes a waveguide and a refractive index control portion. The waveguide has one or more first segments, one or more second segments and a plurality of third segments. The first segment has a region that includes a diffractive grating and another region that is a space region combined to the region. The second segment has a region that includes a diffractive grating and another region that is a space region combined to the region. A length of the second segment is different from that of the first segment. The third segment has a region that includes a diffractive grating and another region that is a space region combined to the region. A length of the third segment is shown as L | 10-09-2008 |
| 20080240191 | SEMICONDUCTOR OPTICAL DEVICE AND MANUFACTURING METHOD THEREOF - In a p-type clad layer, not only a p-type dopant Zn but also Fe is doped. Its Zn concentration is 1.5×10 | 10-02-2008 |
| 20080239601 | SEMICONDUCTOR DEVICE - A semiconductor device includes a pad; an internal circuit; a protection FET that has a drain connected to the pad, and a source connected to a reference potential; a first resistive element that is connected between the drain of the protection FET and the internal circuit, and has a larger resistance value than the value of the series resistance between the drain of the protection FET and the pad; a capacitive element that is connected between the pad and the gate of the protection FET; and a second resistive element that is connected between the gate of the protection FET and the source of the protection FET. | 10-02-2008 |
| 20080237452 | OPTICAL SEMICONDUCTOR MODULE AND LIGHT RECEIVING ELEMENT - An optical semiconductor module that includes: a light emitting element; a light receiving element that has a light receiving face on an upper face and a side face thereof, with the light receiving face having an antireflection film formed thereon; and a mounting unit that has the light emitting element and the light receiving element mounted thereon with such a positional relationship that the light emitted from the light emitting element is optically connected at least on the light receiving face of the side face of the light receiving element. | 10-02-2008 |
| 20080232747 | Optical axis adjusting method, optical module producing method, optical axis adjusting apparatus, and optical module - An optical axis adjusting method for adjusting a tilt angle of an optical axis in two regions optically coupled in a holding member includes the steps of: roughly adjusting the optical axis by irradiating a first region on the holding member with a laser beam; and finely adjusting the optical axis by irradiating a second region on the holding member with a laser beam. One of the two regions is set as a reference point. The first region is located closer to the reference point, while the second region is located further from the reference point. | 09-25-2008 |
| 20080230908 | SEMICONDUCTOR DEVICE - A semiconductor device includes: a pad that is formed on a semiconductor layer, contains Al, and has an interconnection portion that is formed outside a bonding area; an interconnection layer that contains Au and is electrically connected to the interconnection portion of the pad, an edge of the interconnection layer being formed outside of the bonding area; and a barrier layer that is provided between the interconnection portion and the interconnection layer. | 09-25-2008 |
| 20080211052 | FIELD EFFECT TRANSISTOR AND METHOD FOR FABRICATING THE SAME - A method for fabricating a field effect transistor includes: forming an insulating film provided on a semiconductor layer, the insulating film having an opening via which a surface of the semiconductor layer is exposed and including silicon oxide; forming a Schottky electrode on the insulating film and in the opening, the Schottky electrode having an overhang portion and having a first contact layer that is provided in a region contacting the insulating film and contains oxygen, and a second contact layer that is provided on the first contact layer and contains a smaller content of oxygen than that of the first contact layer; and removing the insulating film by a solution including hydrofluoric acid. | 09-04-2008 |
| 20080210989 | SEMICONDUCTOR DEVICE - A semiconductor device includes a p-type semiconductor layer made of a compound semiconductor provided on a substrate, a compound semiconductor layer provided on the p-type semiconductor layer, active regions that are provided on the compound semiconductor layer and are adjacent to each other across an isolation region, a connecting portion that is connected to the p-type semiconductor layer in the isolation region located between the active regions or a region adjacent to another region between the active regions, and FETs respectively provided in the active regions adjacent to each other, a source electrode of at least one of the FETs being connected to a potential of the connecting portion in a region other than the active regions. | 09-04-2008 |
| 20080210949 | SEMICONDUCTOR SUBSTRATE AND SEMICONDUCTOR DEVICE USING THE SAME - A semiconductor substrate includes: an AlN layer provided on a silicon substrate; an AlGaN layer that is provided on the AlN layer and has an Al composition ratio of 0.3 to 0.6; and a GaN layer provided on the AlGaN layer. | 09-04-2008 |
