ETeCH AG Patent applications |
Patent application number | Title | Published |
20090294890 | MULTI-COLOUR SENSITIVE DEVICE FOR COLOR IMAGE SENSING - A sensor element ( | 12-03-2009 |
20090127508 | Novel materials used for emitting light - An luminescent composition comprises a mixture of two or more materials, emitting electromagnetic radiation when subject to stimuli, wherein the spectral emission is not calculable at a first approximation as the simple weighted sum of the spectral emissions of the materials independently subject to said stimuli. Especially advantageous compositions are achieved if the anionic matrix is an oxide and the doping anionic salt is a fluoride or vice versa. | 05-21-2009 |
20090114945 | SPINTRONICS COMPONENTS WITHOUT NON-MAGNETIC INTERPLAYERS - A spintronics element comprises two ferromagnetic layers without a non-magnetic interlayer between them. The two ferromagnetic layers may be independently switched by various means such as but not limited to applying one or more external magnetic fields, and/or employing current induced switching, and/or applying optical spin-pumping. | 05-07-2009 |
20090009914 | Semiconductor Device Using Locating and Sign of the Spin of Electrons - A spin-valve structure is provided, illustrating the layer structure used for the magnetic tunnel junction, by a method comprising the steps of providing a substrate, growing a ferromagnetic layer on the substrate, growing a tunnel barrier layer on the ferromagnetic layer, providing a first non-magnetic metallic contact on the ferromagnetic layer and providing a second non-magnetic metallic contact for the single ferromagnetic layer. Beside such a single sided structure a double-sided structure can be provided having e.g. a Ga0.94Mn0.06As/undoped GaAs/Ga0.94Mn0.06As trilayer structure on top of a semi-insulating GaAs substrate and an undoped LT-GaAs buffer layer. There is an inner square contact and a surrounding electrical back contact. This sample structure makes it possible to perform two-probe magnetoresistance measurements through both ferromagnets and the GaAs tunnel barrier. The resistance of the device is fully dominated by the vertical tunneling process through the tunnel barrier. | 01-08-2009 |
20080316576 | Method and Device for Polarization Conversion Using Quantum Dots - A novel and efficient method for polarization conversion, particularly from linear polarization to circular polarization, and, importantly, vice versa, is obtained using shapeanisotropic self-assembled quantum dots, which, having the advantage of extremely small size (nanometer scale), may be readily incorporated into photonic crystals and/or other optical components. Such devices also have the advantage of working in the absence of an applied magnetic field. Such devices also, when a voltage bias is applied, can be used to manipulate electron spin by manipulating light polarization in the same circuit, and vice versa. This permits a high degree of control for either or both of these in spintronics and/or optical devices, the biased quantum dot being used as a nanometer scale electro-optic modulator. Components utilizing the method and/or devices may be used as part of highly compact optical computing networks and/or spintronics systems for e.g., information processing, quantum computation, holography, and data recording. | 12-25-2008 |
20080281355 | Joining Element - Disclosed is a joining element ( | 11-13-2008 |
20080277645 | Ferromagneic Influence on Quantum Dots - A semiconductor magnetic body comprises a layer ( | 11-13-2008 |