| Epistar Corporation Patent applications |
| Patent application number | Title | Published |
|---|
| 20130140590 | LIGHT-EMITTING DEVICE WITH TEMPERATURE COMPENSATION - The present application provides a light-emitting device comprising a first light-emitting diode group with a first hot/cold factor comprising a plurality of first light-emitting diode units electrically connected to one another; and a temperature compensation element electrically connected to the first light-emitting diode group, and comprising a first resistor and a second resistor; wherein the first resistor has a first temperature coefficient of resistance and the second resistor has a second temperature coefficient of resistance; and the absolute value of the first temperature coefficient of resistance is ten times greater than that of the second temperature coefficient of resistance. | 06-06-2013 |
| 20130140581 | OPTICAL DEVICE - An optical device is provided. Multi-layer structures are disposed on a substrate, wherein each of the multi-layer structures is consisting of at least two insulated layers with different refractive indexes formed alternately. A buffer layer covers the multi-layer structures, so that said multi-layer structures are disposed between the buffer layer and the substrate, wherein said buffer layer is an un-doped GaN based semiconductor layer. A first conductive semiconductor layer is disposed on the buffer layer. An active layer is disposed on said first conductive semiconductor layer. A second conductive semiconductor layer is disposed on said active layer and a transparent conductive layer is disposed on said second conductive semiconductor layer. | 06-06-2013 |
| 20130134457 | OPTOELECTRONIC DEVICE AND METHOD FOR MANUFACTURING THE SAME - An optoelectronic device comprising, a substrate and a first transition stack formed on the substrate comprising a first transition layer formed on the substrate having a hollow component formed inside the first transition layer, a second transition layer formed on the first transition layer, and a reflector rod formed inside the second transition layer. | 05-30-2013 |
| 20130121002 | ILLUMINATION APPARATUS - This disclosure discloses an illumination apparatus. The illumination apparatus comprises a cover comprising a second portion and a first portion, and a light source disposed within the cover. An average thickness of the first portion is greater than that of the second portion. | 05-16-2013 |
| 20130120999 | ILLUMINATION APPARATUS - This disclosure discloses an illumination apparatus. The illumination apparatus comprises an inner cover comprising a top surface having a first length; a pedestal on which the inner cover is disposed comprising a top surface having a second length; and a holder supporting the pedestal; wherein the first length is greater than the second length. | 05-16-2013 |
| 20130119429 | LIGHT-EMITTING ELEMENT AND THE MANUFACTURING METHOD THEREOF - A light-emitting element includes a light-emitting stack includes: a first semiconductor layer; an active layer formed on the first semiconductor layer; and a second semiconductor layer formed on the active layer; a recess structure formed through the second semiconductor layer, the active layer, and extended in the first semiconductor layer, wherein the first semiconductor layer includes a contact region defined by the recess structure; a first electrode structure including a first contact portion on the contact region of the first semiconductor layer, and a second contact portion laterally extended from the first contact portion into the first semiconductor layer; and a dielectric layer formed on side surfaces of the second semiconductor layer and the active layer to insulate the second semiconductor layer and the active layer from the first contact portion. | 05-16-2013 |
| 20130115725 | LIGHT EMITTING DIODE HAVING A TRANSPARENT SUBSTRATE - A light emitting diode having a transparent substrate and a method for manufacturing the same. The light emitting diode is formed by creating two semiconductor multilayers and bonding them. The first semiconductor multilayer is formed on a non-transparent substrate. The second semiconductor multilayer is created by forming an amorphous interface layer on a transparent substrate. The two semiconductor multilayers are bonded and the non-transparent substrate is removed, leaving a semiconductor multilayer with a transparent substrate. | 05-09-2013 |
| 20130113014 | OPTOELECTRONIC DEVICE - The application provides an optoelectronic device structure, comprising a semiconductor stack, comprising a first conductivity type semiconductor layer, an active layer, and a second conductivity type semiconductor layer; a first electrode electrically connecting with the first conductivity type semiconductor layer, and further comprising a first extension electrode; a second electrode electrically connecting with the second conductivity type semiconductor layer; and a plurality of electrical restraint contact areas between the semiconductor stack and the first extension electrode, wherein the plurality of electrical restraint contact areas is distributed in a variable interval. | 05-09-2013 |
| 20130099268 | WAFER-SCALED LIGHT-EMITTING STRUCTURE - This invention discloses a wafer-scaled light-emitting structure comprising a supportive substrate; an anti-deforming layer; a bonding layer; and a light-emitting stacked layer, wherein the anti-deforming layer reduces or removes the deformation like warp caused by thinning of the substrate. | 04-25-2013 |
| 20130092595 | WAFER CARRIER - A wafer carrier comprises a supporting body having a height and comprising an opening, wherein a bottom surface of the opening is a curved surface; and a plurality of supporting rods formed around a periphery of the supporting body. Another aspect of the present application provides a manufacturing method of the wafer carrier. The method comprises forming an epitaxial layer on a growth substrate to form a wafer structure; measuring a curvature radius of the wafer structure; and providing the wafer carrier described above in accordance with the curvature radius of the wafer structure. | 04-18-2013 |
| 20130082238 | LIGHT-EMITTING DEVICE - Disclosed is a light-emitting device, comprising: a first multi-quantum well structure comprising a plurality of first well layers and a first barrier layer stacked alternately, wherein the energy gap of the first barrier layer is larger than that of any one of the first well layers; a second multi-quantum well structure comprising a plurality of second well layers and a second barrier layer stacked alternately, wherein the energy gap of the second barrier layer is larger than that of any one of the second well layers; and a third barrier layer disposed between the first multi-quantum well structure and the second multi-quantum well structure, and the third barrier layer connected with the first well layer and the second well layer, wherein the energy gap of the third barrier layer is larger than that of any one of the first well layers and the second well layers, and the thickness of the third barrier layer is larger than that of any one of the first barrier layer and the second barrier layer. | 04-04-2013 |
| 20130081681 | PHOTOVOLTAIC DEVICE - This disclosure discloses a light-emitting device. The light-emitting device comprises a substrate; a first photovoltaic cell disposed over the substrate comprising a base layer having a first conductivity type; an emitter layer having a second conductivity type; a window layer having the second conductivity type; an intermediate structure between the emitter layer and the window layer having the second conductivity type, and comprising a first portion adjacent to the emitter layer and a second portion on the first portion. The first portion comprises a bandgap energy higher than that of the emitter layer and the intermediate structure is substantially lattice matched with the emitter layer. | 04-04-2013 |
| 20130075696 | LIGHT-EMITTING ELEMENT WITH MULTIPLE LIGHT-EMTTING STACKED LAYERS - A light-emitting device includes a first light-emitting element emitting a first light with a first dominant wavelength including a first MQW structure including a first number of MQW pairs; a second MQW structure on the first MQW structure, including a second number of MQW pairs; and a tunneling layer between the first MQW structure and the second MQW structure; and a second light-emitting element emitting a third light with a third dominant wavelength, wherein the first number is different from the second number. | 03-28-2013 |
| 20130075660 | PHOSPHOR AND METHOD FOR PREPARING THE SAME - Disclosed is a phosphor and a method for preparing the same. The phosphor comprises a material having a general composition formula expressed by M | 03-28-2013 |
| 20130062561 | PHOSPHOR AND METHOD OF PREPARING THE SAME - A phosphor is represented by below formula: | 03-14-2013 |
| 20130045551 | LIGHT-EMITTING DEVICE AND METHOD FOR MANUFACTURING THE SAME - A light-emitting device and method for manufacturing the same are described. A method for manufacturing a light-emitting device comprising steps of: providing a growth substrate, wherein the growth substrate has a first surface and a second surface; forming a light-absorbable layer on the first surface of the growth substrate; forming an illuminant epitaxial structure on the light absorbable layer; providing a laser beam and irradiating the second surface of the growth substrate, wherein the laser beam wavelength is greater than 1000 nm; and removing the growth substrate. | 02-21-2013 |
| 20130043786 | WAVELENGTH CONVERSION STRUCTURE, MANUFACTURING METHOD THEREOF, AND LIGHT-EMITTING DEVICE COMPRISING THE WAVELENGTH CONVERSION STRUCTURE - A wavelength conversion structure comprises a first phosphor layer and a second phosphor layer formed on the first phosphor layer, wherein the first phosphor layer comprises a plurality of first phosphor particles, and the second phosphor layer comprises a plurality of second phosphor particles. The average particle size of the second phosphor particles is not equal to that of the first phosphor particles. | 02-21-2013 |
| 20130032848 | OPTOELECTRONIC DEVICE AND METHOD FOR MANUFACTURING THE SAME - An optoelectronic device comprises a semiconductor stack comprising a first semiconductor layer, an active layer and a second semiconductor layer, a first electrode electrically connecting with the first semiconductor layer, a second electrode electrically connecting with the second semiconductor layer, wherein there is a smallest distance D | 02-07-2013 |
| 20130029440 | METHOD FOR FABRICATING SEMICONDUCTOR LIGHT-EMITTING DEVICE - A semiconductor light-emitting device is disclosed. The semiconductor light-emitting device comprises a multilayer epitaxial structure disposed on a substrate. The substrate has a predetermined lattice direction perpendicular to an upper surface thereof, wherein the predetermined lattice direction is angled toward [0 | 01-31-2013 |
| 20130020609 | SEMICONDUCTOR LIGHT-EMITTING DEVICE HAVING STACKED TRANSPARENT ELECTRODES - This application is related to a semiconductor light-emitting device including a substrate, a semiconductor epitaxial layer over the substrate and having a first surface distant from the substrate, a first transparent conductive layer formed on the first surface, and a second transparent conductive layer formed on the first transparent conductive layer and having a second surface smaller than a first surface of the first transparent conductive layer. | 01-24-2013 |
| 20130015584 | OPTOELECTRONIC SEMICONDUCTOR DEVICE - An optoelectronic semiconductor device includes a substrate, a semiconductor system having an active layer formed on the substrate and an electrode structure formed on the semiconductor system, wherein the layout of the electrode structure having at least a first conductivity type contact zone or a first conductivity type bonding pad, a second conductivity type bonding pad, a first conductivity type extension electrode, and a second conductivity type extension electrode wherein the first conductivity type extension electrode and the second conductivity type extension electrode have three-dimensional crossover, and partial of the first conductivity type extension electrode and the first conductivity type contact zone or the first conductivity type bonding pad are on the opposite sides of the active layer. | 01-17-2013 |
| 20130015484 | LED LAMPS - A high power LED lamp has a GaN chip placed over an AlGaInP chip. A reflector is placed between the two chips. Each of the chips has trenches diverting light for output. The chip pair can be arranged to produce white light having a spectral distribution in the red to blue region that is close to that of daylight. Also, the chip pair can be used to provide an RGB lamp or a red-amber-green traffic lamp. The active regions of both chips can be less than 50 microns away from a heat sink. | 01-17-2013 |
| 20130011949 | METHOD FOR MANUFACTURING HIGH EFFICIENCY LIGHT-EMITTING DIODES - A method of manufacturing a light-emitting device comprising the steps of cutting a substrate by a laser beam to form a cavity in the substrate and generate a by-product directly on the substrate by the cutting, and removing the by-product by a chemical solution containing an acid under a predetermined cleaning temperature. | 01-10-2013 |
| 20130009186 | LED LAMPS - A high power LED lamp has a GaN chip placed over an AlGaInP chip. A reflector is placed between the two chips. Each of the chips has trenches diverting light for output. The chip pair can be arranged to produce white light having a spectral distribution in the red to blue region that is close to that of daylight. Also, the chip pair can be used to provide an RGB lamp or a red-amber-green traffic lamp. The active regions of both chips can be less than 50 microns away from a heat sink. | 01-10-2013 |
| 20120326185 | LIGHT EMITTING DEVICE - A light emitting device including a carrying element having two electric conductors connectable to a power source, a light emitting element disposed on the carrying element and electrically connected to the two electric conductors, and at least one correction element electrically connected to the light emitting element, wherein the light emitting element is adapted to provide a light source upon connection of the two electric conductors with the power source, and the at least one correction element allows the light emitting element to have functions of temperature compensation, voltage correction, or surge absorption. | 12-27-2012 |
| 20120305980 | LED LAMPS - A high power LED lamp has a GaN chip placed over an AlGaInP chip. A reflector is placed between the two chips. Each of the chips has trenches diverting light for output. The chip pair can be arranged to produce white light having a spectral distribution in the red to blue region that is close to that of daylight. Also, the chip pair can be used to provide an RGB lamp or a red-amber-green traffic lamp. The active regions of both chips can be less than 50 microns away from a heat sink. | 12-06-2012 |
| 20120305978 | LED LAMPS - A high power LED lamp has a GaN chip placed over an AlGaInP chip. A reflector is placed between the two chips. Each of the chips has trenches diverting light for output. The chip pair can be arranged to produce white light having a spectral distribution in the red to blue region that is close to that of daylight. Also, the chip pair can be used to provide an RGB lamp or a red-amber-green traffic lamp. The active regions of both chips can be less than 50 microns away from a heat sink. | 12-06-2012 |
| 20120241783 | LED ARRAY - An LED array having N light-emitting diode units (N≧3) comprises a permanent substrate, a bonding layer on the permanent substrate, a second conductive layer on the bonding layer, a second isolation layer on the second conductive layer, a crossover metal layer on the second isolation layer, a first isolation layer on the crossover metal layer, a conductive connecting layer on the first isolation layer, an epitaxial structure on the conductive connecting layer, and a first electrode layer on the epitaxial structure. The light-emitting diode units are electrically connected with each other by the crossover metal layer. | 09-27-2012 |
| 20120211794 | LIGHT-EMITTING DEVICE - This disclosure discloses a light-emitting device. The light-emitting device comprises: a light-emitting stack having an upper surface and a lower surface; a pad, arranged on the upper surface, comprising: a first bonding region; and a second bonding region physically connected to the first bonding region through a connecting region having a connecting width; a first electrode connected to the first bonding region; a second electrode connected to the second bonding region; and a third electrode extending from the pad and arranged between the first electrode and the second electrode. At least one of the first electrode, the second electrode, and the third electrode has a width smaller than the connecting width. | 08-23-2012 |
| 20120202303 | CUSTOMIZED MANUFACTURING METHOD FOR AN OPTOELECTIRCAL DEVICE - The disclosure provides a customized manufacturing method for an optoelectrical device. The customized manufacturing method comprises the steps of providing a manufacturing flow including a front-end flow, a customized module subsequent to the front-end flow, and a pause step between the front-end flow and the customized module, processing a predetermined amount of semi-manufactured products queued at the pause step, tuning the customized module in accordance with a customer's request, and processing the semi-manufactured products by the tuned customized module to fulfill the customer's request. | 08-09-2012 |
| 20120168799 | LED LAMPS - A high power LED lamp has a GaN chip placed over an AlGaInP chip. A reflector is placed between the two chips. Each of the chips has trenches diverting light for output. The chip pair can be arranged to produce white light having a spectral distribution in the red to blue region that is close to that of daylight. Also, the chip pair can be used to provide an RGB lamp or a red-amber-green traffic lamp. The active regions of both chips can be less than 50 microns away from a heat sink. | 07-05-2012 |
| 20120161193 | LED LAMPS - A high power LED lamp has a GaN chip placed over an AlGaInP chip. A reflector is placed between the two chips. Each of the chips has trenches diverting light for output. The chip pair can be arranged to produce white light having a spectral distribution in the red to blue region that is close to that of daylight. Also, the chip pair can be used to provide an RGB lamp or a red-amber-green traffic lamp. The active regions of both chips can be less than 50 microns away from a heat sink. | 06-28-2012 |
| 20120147605 | LIGHT-EMITTING DEVICE - Disclosed is a light-emitting element comprises a substrate; a light-emitting stack layer disposed on the substrate; wherein the light-emitting stack layer comprises a first semiconductor layer, a first active layer disposed on the first semiconductor layer, a magnetic film layer disposed on the first active layer, a second active layer disposed on the magnetic film layer, and a second semiconductor layer disposed on the second active layer. | 06-14-2012 |
| 20120146087 | LIGHT-EMITTING DEVICE AND METHOD FOR MANUFACTURING THE SAME - A light-emitting device is disclosed. The light-emitting device comprises a substrate, an ion implanted layer on the substrate, a light-emitting stack layer disposed on the ion implanted layer, and an adhesive layer connecting the substrate with the light-emitting stack layer, wherein the adhesive layer comprises a thin silicon film disposed between the ion implanted layer and the light-emitting layer. This invention also discloses a method of manufacturing a light-emitting device comprising the steps of forming a light-emitting stack layer, forming a thin silicon film on the light-emitting stack layer, providing a substrate, forming an ion implanted layer on the substrate, and providing an electrode potential difference to form an oxide layer between the thin silicon film and the ion implanted layer. | 06-14-2012 |
| 20120138991 | HIGH-EFFICIENCY LIGHT-EMITTING DEVICE AND MANUFACTURING METHOD THEREOF - This invention provides a high-efficiency light-emitting device and the manufacturing method thereof The high-efficiency light-emitting device includes a substrate; a reflective layer; a bonding layer; a first semiconductor layer; an active layer; and a second semiconductor layer formed on the active layer. The second semiconductor layer includes a first surface having a first lower region and a first higher region. | 06-07-2012 |
| 20120138980 | OPTOELECTRONIC DEVICE AND METHOD FOR MANUFACTURING THE SAME - An optoelectronic device, comprising: a substrate; a plurality of the first semiconductor rods formed on the substrate, contacted with the substrate, and exposed partial of the first surface of the substrate; a first protection layer formed on the sidewall of the plurality of the first semiconductor rods and the exposed partial of the first surface of the substrate; a first buffer layer formed on the plurality of the first semiconductor rods wherein the first buffer layer having a first surface and a second surface opposite to the first surface, and the plurality of the first semiconductor rods directly contacted with the first surface; and at least one first hollow component formed among the first semiconductor rods, the first surface of the substrate, and the first surface of the first buffer layer and the ratio of the height and the width of the first hollow component is 1/5-3. | 06-07-2012 |
| 20120132944 | LIGHT-EMITTING DEVICE, LIGHT MIXING DEVICE AND MANUFACTURING METHODS THEREOF - Disclosed is a light-emitting device comprising: a carrier; a light-emitting element disposed on the carrier; a first light guide layer covering the light-emitting element, and disposed on the carrier; a wavelength conversion and light guide layer covering the first light guide layer and the light-emitting element, and disposed on the carrier; and a low refractive index layer disposed between the first light guide layer and the wavelength conversion and light guide layer; wherein the first light guide layer comprises a gradient refractive index, the wavelength conversion and light guide layer comprises a dome shape structure and is used to convert a wavelength of light emitted from the light-emitting element and transmit light, and the low refractive index layer is used to reflect light from the wavelength conversion and light guide layer. | 05-31-2012 |
| 20120119245 | LIGHT-EMITTING DEVICE - Disclosed is a light-emitting device comprising: a carrier comprising: a first side and a second side; a semiconductor light-emitting stack layer on the first side of the carrier, the semiconductor light-emitting stack layer comprising a first conductivity type semiconductor layer, an active layer, and a second conductivity type semiconductor layer ; and a first electrode structure electrically coupled to the second conductivity type semiconductor layer, the first electrode structure comprising: a main electrode surrounding the semiconductor light-emitting stack layer; an extending electrode extending from the main electrode onto the second conductivity type semiconductor layer; and an electrode pad coupling to the main electrode. | 05-17-2012 |
| 20120080697 | LIGHT-EMITTING ELEMENT HAVING A PLURALITY OF CONTACT PARTS - A light-emitting element includes a supportive substrate; a reflective layer formed on the supportive substrate; a transparent layer formed on the reflective layer; a light-emitting stacked layer formed on the transparent layer; an etching-stop layer formed between the transparent layer and the reflective layer; and a plurality of contact parts formed between the light-emitting stacked layer and the transparent layer. | 04-05-2012 |
| 20120074379 | LIGHT-EMITTING ELEMENT AND THE MANUFACTURING METHOD THEREOF - A light-emitting element includes: a substrate being a monocrystalline structure, comprising a plurality of recesses; and a plurality of first light-emitting stacks formed in the recesses respectively. | 03-29-2012 |
| 20120068214 | OPTOELECTRONIC DEVICE AND METHOD FOR MANUFACTURING THE SAME - An optoelectronic device is provided that includes a substrate having a surface and a normal direction perpendicular to the surface, a first semiconductor layer formed on the surface, and at least one hollow component formed between the first semiconductor layer and the surface. A method of fabricating an optoelectronic device is also provided that includes providing a substrate having a surface and a normal direction perpendicular to the surface, forming a first semiconductor layer on the surface, patterning the first semiconductor layer, forming a second semiconductor layer on the substrate and cover the patterned first semiconductor layer, and forming at least one hollow component formed between the first semiconductor layer and the surface. A height of the hollow component varies along with a first direction perpendicular to the normal direction and/or a width of the hollow component varies along with a second direction parallel with the normal direction. | 03-22-2012 |
| 20120061694 | LIGHT-EMITTING STRUCTURE - An embodiment of the present application discloses a light-emitting structure, comprising a first unit; a second unit; a trench formed between the first unit and the second unit, and having a less steep sidewall and a steeper sidewall steeper than the less steep sidewall; and an electrical connection arranged on the less steep sidewall. | 03-15-2012 |
| 20120056229 | LIGHT EMITTING STRUCTURE AND MANUFACTURING METHOD THEREOF - A light-emitting structure comprises a semiconductor light-emitting element which includes a first connection point and a second connection point. The light-emitting structure further includes a first electrode electrically connected to the first connection point, and a second electrode electrically connected the second connection point. The first electrode and the second electrode can form a concave on which the semiconductor light-emitting element is located. | 03-08-2012 |
| 20120056212 | LIGHT-EMITTING DEVICE AND THE MANUFACTURING METHOD THEREOF - A light-emitting device includes: a carrier; a light-emitting structure formed on the carrier, wherein the light-emitting structure has a first surface facing the carrier, a second surface opposite to the first surface, and an active layer between the first surface and the second surface; a plurality of first trenches extended from the first surface and passing through the active layer so a plurality of light-emitting units is defined; and a plurality of second trenches extended from the second surface and passing through the active layer of each of the plurality of light-emitting units. | 03-08-2012 |
| 20120055532 | SEMICONDUCTOR OPTOELECTRONIC DEVICE - A semiconductor optoelectronic device comprises a growth substrate; a semiconductor epitaxial stack formed on the growth substrate comprising a sacrificial layer with electrical conductivity formed on the growth substrate; a first semiconductor material layer having a first electrical conductivity formed on the sacrificial layer, and a second semiconductor material layer having a second electrical conductivity formed on the first semiconductor material layer; and a first electrode directly formed on the growth substrate and electrically connected to the semiconductor epitaxial stack via the growth substrate. | 03-08-2012 |
| 20120037886 | LIGHT-EMITTING DIODE DEVICE - A light-emitting diode device is disclosed. The light-emitting diode device includes a carrier including a platform; a transparent substrate formed on the platform including a first surface; a multi-LED structure including a first light-emitting structure formed on the first surface, the first light-emitting structure including a first first-type semiconductor layer, a first second-type semiconductor layer, and a first active layer formed between the first first-type semiconductor layer and the first second-type semiconductor layer; a second light-emitting structure formed on the first surface, the second light-emitting structure including a second first-type semiconductor layer, a second second-type semiconductor layer, and a second active layer formed between the second first-type semiconductor layer and the second second-type semiconductor layer; and a connecting layer formed between the first light-emitting structure and the second light-emitting structure; wherein an angle between the first surface of the transparent substrate and the platform is not equal to zero. | 02-16-2012 |
| 20120025250 | SEMICONDUCTOR LIGHT-EMITTING DEVICE AND THE MANUFACTURING METHOD THEREOF - This application provides a semiconductor light-emitting device and the manufacturing method thereof. The semiconductor light-emitting device comprises a semiconductor light-emitting structure and a thinned substrate. The semiconductor light-emitting structure comprises a plurality of semiconductor layers and a plurality of first channels, wherein a plurality of first channels has a predetermined depth that penetrating at least two layers of the plurality of semiconductor layers. | 02-02-2012 |
| 20120018745 | INTEGRATED LIGHTING APPARATUS AND METHOD OF MANUFACTURING THE SAME - An integrated lighting apparatus includes at least a lighting device, a control device comprising an integrated circuit, and a connector that is used to electrically connect the lighting device and the control device. With the combination, the integrated circuit drives the lighting device in accordance with its various designed functionality, thus expands applications of the integrated lighting apparatus. | 01-26-2012 |
| 20120012867 | MULTI-DIMENSIONAL LIGHT-EMITTING DEVICE - The present application provides a multi-dimensional light-emitting device electrically connected to a power supply system. The multi-dimensional light-emitting device comprises a substrate, a blue light-emitting diode array and one or more phosphor layers. The blue light-emitting diode array, disposed on the substrate, comprises a plurality of blue light-emitting diode chips which are electrically connected. The multi-dimensional light-emitting device comprises a central area and a plurality of peripheral areas, which are arranged around the central area. The phosphor layer covers the central area. When the power supply system provides a high voltage, the central area and the peripheral areas of the multi-dimensional light-emitting device provide a first light and a plurality of second lights, respectively. The first light and the second lights are blended into a mixed light. | 01-19-2012 |
| 20120007042 | LIGHT EMITTING DEVICE WITH A SINGLE QUANTUM WELL ROD - A light emitting device comprising a first semiconductor layer, a second semiconductor layer and a quantum well layer, wherein the first semiconductor layer and the second semiconductor layer are disposed on the opposite sides of the quantum well layer, the quantum well layer comprising a plurality of quantum well rods which are separated from each other, and each of the quantum well rods has only one quantum well. | 01-12-2012 |
| 20120000509 | MULTI-DIRECTIONAL SOLAR ENERGY COLLECTOR SYSTEM - The present disclosure provides a multi-directional solar energy collector system. It comprises a light concentration device which includes one or plural light concentration lens and one or plural chambers. By means of the light concentration device, the incoming light can be concentrated once or multiple time, then is guided to the solar cell. The system is able to collect incoming light from various directions without consuming additional power. | 01-05-2012 |
| 20110316023 | Light-Emitting Device Having A Ramp - A light-emitting device includes a light-emitting stacked layer having an active layer, and a composite substrate located under the light-emitting stacked layer. The composite substrate includes a supportive substrate having a top surface and a bottom surface non-parallel to the active layer; a metal substrate located under the supportive substrate; and a reflective layer located between the supportive substrate and the metal substrate. | 12-29-2011 |
| 20110312113 | LIGHT-EMITTING DIODE STRUCTURE WITH ELECTRODE PADS OF SIMILAR SURFACE ROUGHNESS AND METHOD FOR MANUFACTURING THE SAME - A light-emitting diode (LED) structure and a method for manufacturing the LED structure are disclosed for promoting the recognition rate of LED chips, wherein a roughness degree of the surface under a first electrode pad of a first conductivity type is made similar to that of the surface under a second electrode pad of a second conductivity type, so that the luster shown from the first electrode pad can be similar to that from the second electrode pad, thus resolving the poor recognition problem of wire-bonding machines caused by different lusters from the first and second electrode pads. | 12-22-2011 |
| 20110291145 | OPTOELECTRONIC ELEMENT AND MANUFACTURING METHOD THEREOF - An optoelectronic element includes an optoelectronic unit having a first top surface, a first bottom surface opposite to the first top surface, and a lateral surface between the first top surface and the first bottom surface; a first transparent structure covering the lateral surface and exposing the first top surface of the optoelectronic unit; a first insulating layer on the first top surface and the first transparent structure; a second insulating layer on the first insulating layer; a first opening through the first insulating layer and the second insulating layer; and a first conductive layer on the second insulating layer and electrically connecting to the optoelectronic unit via the first opening. | 12-01-2011 |
| 20110281383 | METHOD FOR MANUFACTURING HIGH EFFICIENCY LIGHT-EMITTING DIODES - A method for manufacturing a light-emitting device comprising the steps of: providing a substrate comprising a first surface and a second surface; forming a plurality of cutting lines on the substrate by a laser beam; cleaning the substrate by a chemical solution; and forming a light-emitting stack on an first surface of the substrate after cleaning the substrate. | 11-17-2011 |
| 20110272727 | LIGHT-EMITTING DIODE AND METHOD FOR MANUFACTURING THE SAME - A light-emitting diode and method for manufacturing the same are described. The light-emitting diode comprises: a conductive substrate including a first surface and a second surface opposite to the first surface; a reflector structure comprising a conductive reflector layer bonding to the first surface of the conductive substrate and a conductive distributed Bragg reflector (DBR) structure stacked on the conductive reflector layer; an illuminant epitaxial structure disposed on the reflector structure; a first electrode disposed on a portion of the illuminant epitaxial structure; and a second electrode bonded to the second surface of the conductive substrate. | 11-10-2011 |
| 20110266581 | LIGHT-EMITTING DEVICE CONTAINING A COMPOSITE ELECTROPLATED SUBSTRATE - The application is related to a method of forming a substrate of a light-emitting diode by composite electroplating. The application illustrates a light-emitting diode comprising the following elements: a light-emitting epitaxy structure, a reflective layer disposed on the light-emitting epitaxy structure, a seed layer disposed on the reflective layer, a composite electroplating substrate disposed on the seed layer by composite electroplating, and a protection layer disposed on the composite electroplating substrate. | 11-03-2011 |
| 20110254046 | LIGHT-EMITTING DEVICE - The present invention is related to a light-emitting device. The present invention illustrates a vertical light-emitting device in one embodiment, comprising the following elements: a conductive substrate includes a through-hole, a patterned semiconductor structure disposed on a first surface of the substrate, a first bonding pad and a second bonding pad disposed on a second surface of the substrate, a conductive line passing through the through-hole connecting electrically the semiconductor structure layer, and an insulation layer on at least one sidewall of the through-hole insulates the conductive line form the substrate. The present invention illustrates a horizontal light-emitting device in another embodiment, comprising the following elements: a substrate includes a first tilted sidewall, a patterned semiconductor structure disposed on a first surface of the substrate, a first conductive line is disposed on at least the first tilted sidewall of the substrate and connecting electrically the patterned semiconductor structure. | 10-20-2011 |
| 20110253979 | LIGHT-EMITTING DEVICE AND METHOD FOR MANUFACTURING THE SAME - A light-emitting device and the method for making the same is disclosed. The light-emitting device is a semiconductor device, comprising a growth substrate, an n-type semiconductor layer, a quantum well active layer and a p-type semiconductor layer. It combines the holographic and the quantum well interdiffusion (QWI) to form a photonic crystal light-emitting device having a dielectric constant of two-dimensional periodic variation or a material composition of two-dimensional periodic variation in the quantum well active layer. The photonic crystal light-emitting devices can enhance the internal efficiency and light extraction efficiency. | 10-20-2011 |
| 20110220873 | LIGHT EMITTING DIODE HAVING A TRANSPARENT SUBSTRATE - A light emitting diode having a transparent substrate and a method for manufacturing the same. The light emitting diode is formed by creating two semiconductor multilayers and bonding them. The first semiconductor multilayer is formed on a non-transparent substrate. The second semiconductor multilayer is created by forming an amorphous interface layer on a transparent substrate. The two semiconductor multilayers are bonded and the non-transparent substrate is removed, leaving a semiconductor multilayer with a transparent substrate. | 09-15-2011 |
| 20110210361 | HIGH EFFICIENT PHOSPHOR-CONVERTED LIGHT EMITTING DIODE - A light-emitting device and manufacturing method thereof are disclosed. The light-emitting device includes a substrate, a semiconductor light-emitting structure, a filter layer, and a fluorescent conversion layer. The method comprises forming a semiconductor light-emitting structure over a substrate, forming a filter layer over the semiconductor light-emitting structure, and forming a fluorescent conversion layer over the filter layer. | 09-01-2011 |
| 20110198650 | SEMICONDUCTOR LIGHT-EMITTING DEVICE AND METHOD - The present invention discloses a semiconductor light-emitting device including a semiconductor light-emitting element, a first attaching layer and a wavelength conversion structure. The primary light emitted from the semiconductor light-emitting element enters the wavelength conversion structure to generate a converted light, whose wavelength is different form that of the primary light. In addition, the present invention also provides the method for forming the same. | 08-18-2011 |
| 20110132447 | SOLAR CELL DEVICES AND APPARATUS COMPRISING THE SAME - A multi junction solar cell device includes a substrate having a first lattice constant, a first optoelectronic conversion layer having a second lattice constant, and a second optoelectronic conversion layer having a third lattice constant wherein the value of the first lattice constant is between that of the second lattice constant and the third lattice constant. | 06-09-2011 |
| 20110095326 | SEMICONDUCTOR LIGHT EMITTING DEVICE - This invention discloses a light emitting semiconductor device including a light-emitting structure and an external optical element. The optical element couples to the light-emitting structure circumferentially. In addition, the refractive index of the external optical element is greater than or about the same as that of a transparent substrate of the light-emitting structure, or in-between that of the transparent substrate and the encapsulant material. | 04-28-2011 |
| 20110095325 | OPTOELECTRONIC SEMICONDUCTOR DEVICE AND MANUFACTURING METHOD THEREOF - An embodiment of the invention discloses an optoelectronic semiconductor device comprising a semiconductor system capable of performing a conversion between light energy and electrical energy; an interfacial layer formed on at least two surfaces of the semiconductor system; an electrical conductor; and an electrical connector electrically connecting the semiconductor system to the electric conductor. | 04-28-2011 |
| 20110089444 | LIGHT-EMITTING ELEMENT - A light emitting element includes a carrier, a conductive connecting structure disposed on the carrier, an epitaxial stack structure including at least a first lighting stack and a second lighting stack disposed on the conductive connecting structure, an insulation section disposed between the epitaxial stack structure and the conductive connecting structure, and at least a metal line laid on the surface of the light emitting element, wherein the first light emitting stack further includes two electrodes having different polarity formed thereon; the second lighting stack is electrically connected to the conductive connecting structure at the bottom thereof and includes an electrode formed thereon. The insulation section is disposed below the first lighting stack to make the first lighting stack be insulated from the conductive connecting structure. The metal lines and the conductive connecting structure are electrically connected to each of the lighting stacks in parallel connection or series connection. | 04-21-2011 |
| 20110084304 | LIGHT EMITTING DEVICE AND METHOD OF FORMING THE SAME - An embodiment of present invention discloses a light-emitting device comprising a first multi-layer structure comprising a first lower layer; a first upper layer; and a first active layer able to emit light under a bias voltage and positioned between the first lower layer and the first upper layer; a second thick layer neighboring the first multi-layer structure; a second connection layer associated with the second thick layer; a connective line electrically connected to the second connection layer and the first multi-layer structure; a substrate; and two or more ohmic contact electrodes between the first multi-layer structure and the substrate. | 04-14-2011 |
| 20110074305 | ALTERNATIVE CURRENT LIGHT-EMITTING SYSTEMS - A light-emitting system is introduced herein. The light-emitting system includes a substrate and a plurality of light-emitting units electrically-connected on the substrate. Each of the plurality of light-emitting units includes a plurality of light-emitting diodes arranged as a bridge rectifier. A first part of the plurality of light-emitting diodes emits light during positive half cycles of an AC power signal. A second part of the plurality of light-emitting diodes emits light during negative half cycles of the AC power signal. The third part of the plurality of light-emitting diodes comprising at least one light-emitting diode emits light during both the positive half cycles and the negative half cycles of the AC power signal. | 03-31-2011 |
| 20110024880 | NANO-PATTERNED SUBSTRATE AND EPITAXIAL STRUCTURE - A nano-patterned substrate includes a plurality of nano-particles or nanopillars on an upper surface thereof. A ratio of height to diameter of each of the nano-particles or each of the nanopillars is either greater than or equal to 1. Particularly, a ratio of height to diameter of the nanopillars is greater than or equal to 5. Each of the nano-particles or each of the nanopillars has an arc-shaped top surface. When an epitaxial growth process is applied onto the nano-patterned substrate to form an epitaxial layer, the epitaxial layer has very low defect density. Thus, a production yield of fabricating the subsequent device can be improved. | 02-03-2011 |
| 20110013422 | LIGHT-EMITTING DEVICE - This application relates to a light-emitting device comprising a light channel having an upper surface, a lower surface opposite to the upper surface, an inner surface intersecting with each of the upper and lower surface by different angles, and an escape surface; and a light-emitting element having a bottom surface substantially parallel to the inner surface and emitting light traveling inside the light channel toward the escape surface. In an embodiment, the escape surface of the light-emitting device is an inclined plane with lens array thereon. | 01-20-2011 |
| 20110012137 | STRUCTURE OF AC LIGHT-EMITTING DIODE DIES - A structure of light-emitting diode (LED) dies having an AC loop (a structure of AC LED dies), which is formed with at least one unit of AC LED micro-dies disposed on a chip. The unit of AC LED micro-dies comprises two LED micro-dies arranged in mutually reverse orientations and connected with each other in parallel, to which an AC power supply may be applied so that the LED unit may continuously emit light in response to a positive-half wave voltage and a negative-half wave voltage in the AC power supply. Since each AC LED micro-die is operated forwardly, the structure of AC LED dies also provides protection from electrical static charge (ESD) and may operate under a high voltage. | 01-20-2011 |
| 20110006312 | LIGHT-EMITTING DEVICE - This disclosure discloses a light-emitting device, comprising a substrate having a first major surface and a second major surface; a plurality of light-emitting stacks on the first major surface; and at least one electronic device on the second major surface, wherein the light-emitting stacks are electrically connected to each other in series via a first electrical connecting structure; the electronic device are electrically connected to the light-emitting stacks via a second electrical connecting structure. | 01-13-2011 |
| 20100309649 | PHOTOELECTRONIC DEVICE HAVING A VARIABLE RESISTOR STRUCTURE - A photoelectronic device having a variable resistor structure includes a photoelectronic element array. The photoelectronic element array electrically connects with the variable resistor structure via a wire structure, wherein at least one resistor of the variable resistor structure is open. | 12-09-2010 |
| 20100308347 | Light Emitting Device - A light emitting device includes a plurality of micro diodes, which are electrically connected to constitute a bridge rectifier circuit. Each branch of the bridge rectifier circuit includes a single micro diode or a plurality of micro diodes. The light emitting device is electrically connected to an AC power source, which alternately drives the light emitting device in two current loops. Therefore, the micro diodes in two current loops of the bridge rectifier circuit emit light by turns. | 12-09-2010 |
| 20100283081 | LIGHT-EMITTING DEVICE - A light-emitting device comprising a semiconductor light-emitting stack, comprising a light emitting area; an electrode formed on the semiconductor light-emitting stack, wherein the electrode comprises a current injected portion and an extension portion; a current blocking structure formed between the current injected portion and the semiconductor light-emitting stack, and formed between a first part of the extension portion and the semiconductor light-emitting stack; and an electrical contact structure formed between a second part of the extension portion and the semiconductor light-emitting stack. | 11-11-2010 |
| 20100279443 | LIGHT EMITTING DIODE AND FABRICATING METHOD THEREOF - A light emitting diode and its fabricating method are disclosed. A light emitting diode epitaxy structure is formed on a substrate, and then the light emitting diode epitaxy structure is etched to form a recess. The recess is then filled with a transparent dielectric material. An adhesive layer is utilized to adhere a conductive substrate and the light emitting diode epitaxy structure. Next, the substrate is removed. | 11-04-2010 |
| 20100200873 | HIGH EFFICIENT PHOSPHOR-CONVERTED LIGHT EMITTING DIODE - A light-emitting device and manufacturing method thereof are disclosed. The light-emitting device includes a substrate, a semiconductor light-emitting structure, a filter layer, and a fluorescent conversion layer. The method comprises forming a semiconductor light-emitting structure over a substrate, forming a filter layer over the semiconductor light-emitting structure, and forming a fluorescent conversion layer over the filter layer. | 08-12-2010 |
| 20100171094 | LIGHT-EMITTING SEMICONDUCTOR APPARATUS - A light-emitting semiconductor apparatus includes a light-emitting structure, a reflective structure, and a carrier. The light-emitting structure includes a first type semiconductor layer, a second type semiconductor layer, and a light-emitting layer positioned between the first type semiconductor layer and the second type semiconductor layer. The reflective structure has a first transparent conductive layer, a first patterned reflective layer, a second transparent conductive layer, and a second patterned reflective layer. The first patterned reflective layer is disposed between the first transparent conductive layer and the second transparent conductive layer, and has an opening for physically connecting the first transparent conductive layer and the second transparent conductive layer. The second transparent conductive layer is disposed between the first patterned reflective layer and the second patterned reflective layer. The second patterned reflective layer is positioned on an area corresponding to the opening. The light-emitting structure and the carrier are respectively on two sides of the reflective structure. | 07-08-2010 |
| 20100159622 | LIGHT EMITTING DEVICE AND METHOD OF FORMING THE SAME - A light-emitting device includes a transparent substrate, a transparent adhesive layer on the transparent substrate, a first transparent conductive layer on the transparent adhesive layer, a multi-layer epitaxial structure and a first electrode on the transparent conductive layer, and a second electrode on the multi-layer epitaxial structure. The multi-layer epitaxial structure includes a light-emitting layer. The transparent substrate has a first surface facing the transparent adhesive layer and a second surface opposite to the first surface, wherein the area of the second surface is larger than that of the light-emitting layer, and the area ratio thereof is not less than 1.6. | 06-24-2010 |
| 20100133999 | MULTICOLOR PACKAGE - An opto-electronic device package structure for multicolor light is disclosed. The package structure comprises a transparent carrier, a circuit layer on the transparent carrier, an opto-electronic device emitting the light of the first wavelength and is electrically connecting with the circuit layer on the transparent carrier, a first wavelength conversion structure on the lateral side of the opto-electronic device, a reflective layer on the first wavelength conversion structure, and a transparent material for package on the reflective layer and on the opto-electronic device. | 06-03-2010 |
| 20100127397 | Optoelectronic semiconductor device - An optoelectronic semiconductor device includes a substrate, a semiconductor system having an active layer formed on the substrate and an electrode structure formed on the semiconductor system, wherein the layout of the electrode structure having at least a first conductivity type contact zone or a first conductivity type bonding pad, a second conductivity type bonding pad, a first conductivity type extension electrode, and a second conductivity type extension electrode wherein the first conductivity type extension electrode and the second conductivity type extension electrode have three-dimensional crossover, and partial of the first conductivity type extension electrode and the first conductivity type contact zone or the first conductivity type bonding pad are on the opposite sides of the active layer. | 05-27-2010 |
| 20100109028 | Vertical ACLED structure - This application related to an opto-electrical device, comprising a first ACLED having a first n-type semiconductor layer, a first light emitting layer, a first p-type semiconductor layer, a first p-type electrode and a first n-type electrode; a second ACLED having a second n-type semiconductor layer, a second light emitting layer, a second p-type semiconductor layer, a second p-type electrode and a second n-type electrode, wherein each of the first ACLED and the second ACLED are vertical stack structure and is connected in anti-parallel manner. | 05-06-2010 |
| 20100101639 | Optoelectronic device having a multi-layer solder and manufacturing method thereof - An optoelectronic device having a multi-layer solder is disclosed. It included a semiconductor stack, an ohmic layer and a multi-layer solder including a plurality of first type conductive material layers and a plurality of second type conductive material layers. The plurality of first type conductive material layers and the plurality of second type conductive material layers are interlaced each other and the first type conductive material layer is an alloy layer and the second type conductive material layer is a metal layer. | 04-29-2010 |
| 20100084679 | LIGHT-EMITTING DEVICE - A light-emitting device having a substrate, a light-emitting stack, and a transparent connective layer is provided. The light-emitting stack is disposed above the substrate and comprises a first diffusing surface. The transparent connective layer is disposed between the substrate and the first diffusing surface of the light-emitting stack; an index of refraction of the light-emitting stack is different from that of the transparent connective layer. | 04-08-2010 |
| 20100052000 | OPTOELECTRONIC SEMICONDUCTOR DEVICE - An optoelectronic semiconductor device in accordance with an embodiment of present invention includes a conversion unit having a first side; an electrical connector; a contact layer having an outer perimeter; and at least three successive discontinuous-regions formed along the outer perimeter and having at least one different factor; wherein the electrical connector, the contact layer, and the discontinuous-regions are formed on the first side of the conversion unit. | 03-04-2010 |
| 20100025714 | LIGHT-EMITTING DEVICE CONTAINING A COMPOSITE ELECTROPLATED SUBSTRATE - The application is related to a method of forming a substrate of a light-emitting diode by composite electroplating. The application illustrates a light-emitting diode comprising the following elements: a light-emitting epitaxy structure, a reflective layer disposed on the light-emitting epitaxy structure, a seed layer disposed on the reflective layer, a composite electroplating substrate disposed on the seed layer by composite electroplating, and a protection layer disposed on the composite electroplating substrate. | 02-04-2010 |
| 20100006884 | Light Emitting Device and Manufacturing Method Therof - The application relates to a structure of a light emitting device and the manufacturing method thereof. The application discloses a method of forming a bonding pad of the light emitting device by chemical deposition method. The light emitting device includes a substrate, a semiconductor stack deposited on the substrate wherein the semiconductor stack includes at least a p-type semiconductor layer, an n-type semiconductor layer, and an active layer disposed between the p-type semiconductor layer and the n-type semiconductor layer. A bonding pad is formed on at least one of the p-type semiconductor layer and the n-type semiconductor layer wherein the bonding pad includes a seed layer formed by physical deposition method, and a chemically-deposited layer formed by chemical deposition method. The thickness of the seed layer is smaller than that of the chemically-deposited layer. | 01-14-2010 |
| 20100001312 | Light-emitting device and method for manufacturing the same - A light-emitting device is disclosed. The light-emitting device comprises a substrate, wherein an ion implanted layer on the top surface of the substrate; a thin silicon film disposing on the ion implanted layer; and a light-emitting stack layer on the thin silicon film. This invention also discloses a method of manufacturing a light-emitting device comprising providing a substrate; forming an ion implanted layer on the top surface of the substrate; providing a light-emitting stack layer; forming a thin silicon film on the bottom surface of the light-emitting stack layer; and bonding the light-emitting stack layer to the substrate with the anodic bonding technique. | 01-07-2010 |
| 20090309123 | LIGHT-EMITTING DEVICE - This application discloses alight-emitting diode device, comprising an epitaxial structure having a light-emitting layer, a first-type conductivity layer, and a second-type conductivity layer wherein the thicknesses of the first-type conductivity confining layer is not equal to the second-type conductivity confining layer and the light-emitting layer is not overlapped with the portion of the epitaxial structure corresponding to the peak zone of the wave intensity distribution curve along the direction of the epitaxy growth. | 12-17-2009 |
| 20090302334 | Light-emitting element array - A light-emitting element array includes a conductive substrate; an adhesive layer disposed on the conductive substrate; a first epitaxial light-emitting stack layers disposed on the adhesive layer, the first epitaxial light-emitting stack layers including a first p-contact and an first n-contact, wherein the first p-contact and the first n-contact are disposed on the same side of the first epitaxial light-emitting stack layer; and a second epitaxial light-emitting stack layers disposed on the adhesive layer including a second p-contact and an second n-contact, wherein the second p-contact and the second n-contact are disposed on the opposite side of the epitaxial light-emitting stack layer; wherein the first epitaxial light-emitting stack layers and the second epitaxial light-emitting stack layers are electrically connected in anti-parallel. | 12-10-2009 |
| 20090272964 | Light-emitting device and method for manufacturing the same - A light-emitting device and the method for making the same is disclosed. The light-emitting device is a semiconductor device, comprising a growth substrate, an n-type semiconductor layer, a quantum well active layer and a p-type semiconductor layer. It combines the holographic and the quantum well interdiffusion (QWI) to form a photonic crystal light-emitting device having a dielectric constant of two-dimensional periodic variation or a material composition of two-dimensional periodic variation in the quantum well active layer. The photonic crystal light-emitting devices can enhance the internal efficiency and light extraction efficiency. | 11-05-2009 |
| 20090267488 | Wavelength converting material and use of same - This invention discloses a wavelength converting material. The wavelength converting material comprises a metal haloaluminate compound phosphor with a chemical formula M | 10-29-2009 |
| 20090256159 | GaN semiconductor device - This invention discloses a GaN semiconductor device comprising a substrate; a metal-rich nitride compound thin film on the substrate; a buffer layer formed on the metal-rich nitride compound thin film, and a semiconductor stack layer on the buffer layer wherein the metal-dominated nitride compound thin film covers a partial upper surface of the substrate. Because metal-rich nitride compound is amorphous, the epitaxial growth direction of the buffer layer grows upwards in the beginning and then turns laterally, and the epitaxy defects of the buffer layer also bend with the epitaxial growth direction of the buffer layer. Therefore, the probability of the epitaxial defects extending to the semiconductor stack layer is reduced and the reliability of the GaN semiconductor device is improved. | 10-15-2009 |
| 20090216356 | Customized manufacturing method for an optoelectrical device - The disclosure provides a customized manufacturing method for an optoelectrical device. The customized manufacturing method comprises the steps of providing a manufacturing flow including a front-end flow, a customized module subsequent to the front-end flow, and a pause step between the front-end flow and the customized module, processing a predetermined amount of semi-manufactured products queued at the pause step, tuning the customized module in accordance with a customer's request, and processing the semi-manufactured products by the tuned customized module to fulfill the customer's request. | 08-27-2009 |
| 20090200560 | Light emitting device and method of forming the same - An embodiment of present invention discloses a light-emitting device comprising a first multi-layer structure comprising a first lower layer; a first upper layer; and a first active layer able to emit light under a bias voltage and positioned between the first lower layer and the first upper layer; a second thick layer neighboring the first multi-layer structure; a second connection layer associated with the second thick layer; a connective line electrically connected to the second connection layer and the first multi-layer structure; a substrate; and two or more ohmic contact electrodes between the first multi-layer structure and the substrate. | 08-13-2009 |
| 20090173963 | Light-emitting device - The present invention is related to a light-emitting device. The present invention illustrates a vertical light-emitting device in one embodiment, comprising the following elements: a conductive substrate includes a through-hole, a patterned semiconductor structure disposed on a first surface of the substrate, a first bonding pad and a second bonding pad disposed on a second surface of the substrate, a conductive line passing through the through-hole connecting electrically the semiconductor structure layer, and an insulation layer on at least one sidewall of the through-hole insulates the conductive line form the substrate. The present invention illustrates a horizontal light-emitting device in another embodiment, comprising the following elements: a substrate includes a first tilted sidewall, a patterned semiconductor structure disposed on a first surface of the substrate, a first conductive line is disposed on at least the first tilted sidewall of the substrate and connecting electrically the patterned semiconductor structure. | 07-09-2009 |
| 20090166666 | Semiconductor device - An exemplary semiconductor device is provided. The semiconductor device includes a semiconductor stacked layer and a conductive structure. The conductive structure is located on the semiconductor stacked layer. The conductive structure includes a bottom portion and a top portion on opposite sides thereof. The bottom portion is in contact with the semiconductor stacked layer. A ratio of a top width of the top portion to a bottom width of the bottom portion is less than 0.7. The conductive structure can be a conductive dot structure or a conductive line structure. | 07-02-2009 |
| 20090162960 | Method for manufacturing high efficiency light-emitting diodes - A method for manufacturing a light-emitting device comprising the steps of cutting a light-emitting unit by a laser beam, and cleaning the light-emitting unit by an acid solution to remove by-products resulted from the laser cutting. | 06-25-2009 |
| 20090146049 | OPTOELECTRONIC DEVICE ASSEMBLY - An embodiment of present invention discloses an optoelectronic device package including a first auxiliary energy receiver having a first energy inlet and a side wall for substantially directing energy far away from the first energy inlet; an optical element optically coupled to the first auxiliary energy receiver and having a recess facing the first energy inlet; and an optoelectronic device optically coupled to the optical element and receiving the energy from the first energy inlet. | 06-11-2009 |
| 20090140280 | Light-emitting device - A light-emitting device comprises a substrate, an epitaxial structure formed on the substrate including a first semiconductor layer, a second semiconductor layer, and a light-emitting layer formed between the first semiconductor layer and the second semiconductor layer. A trench is formed in the epitaxial structure to expose a part of side surface of the epitaxial structure and a part of surface of the first semiconductor layer, so that a first conductive structure is formed on the part of surface of the first semiconductor layer in the trench, and a second conductive structure is formed on the second semiconductor layer. The first conductive structure includes a first electrode and a first pad electrically contacted with each other. The second conductive structure includes a second electrode and a second pad electrically contacted with each other. Furthermore, the area of at least one of the first pad and the second pad is between 1.5×10 | 06-04-2009 |
| 20090122521 | Light-emiting device package - A light-emitting device package is disclosed and comprises at least one light-emitting device and a carrier. The light-emitting device includes a light-emitting diode chip attached to a first surface of a transparent substrate, wherein the chip comprises a first type conductivity semiconductor layer, an active layer and a second type conductivity semiconductor layer. The carrier comprises a p electrode, an n electrode, a platform and a reflective inside wall. The transparent substrate of the light-emitting device is attached to the platform by an adhering layer. In addition, an angle between the first surface of the transparent substrate and the platform is not equal to zero degree, and the better is about 90 degree. | 05-14-2009 |
| 20090111205 | Method of seperating two material systems - An embodiment of this invention discloses a method of separating two material systems, which comprises steps of providing a bulk sapphire; forming a nitride system on the bulk sapphire; forming at least two channels between the bulk sapphire and the nitride system; etching at least one inner surface of the channel; and separating the bulk sapphire and the nitride system. | 04-30-2009 |
| 20090109688 | Photoelectronic device - A photoelectronic device including a carrier, a light-emitting component mounted on the carrier; a patterned structure deposited on the carrier and around the light-emitting component; and a transparent sealing structure formed above the light-emitting component. The patterned structure mentioned above can cause the transparent sealing structure to be focused above the light-emitting component, and restrained in the patterned structure. The transparent sealing structure with predetermined proportional configuration is obtained by controlling the quantity of the transparent sealing structure. Therefore light efficiency of the photoelectronic device can be greatly improved. | 04-30-2009 |
| 20090108286 | Optoelectronic device - An optoelectronic device such as a light-emitting diode chip is disclosed. It includes a substrate, a multi-layer epitaxial structure, a first metal electrode layer, a second metal electrode layer, a first bonding pad and a second bonding pad. The multi-layer epitaxial structure on the transparent substrate comprises a semiconductor layer of a first conductive type, an active layer, and a semiconductor layer of a second conductive type. The first bonding pad and the second bonding pad are on the same level. Furthermore, the first metal electrode layer can be patterned so the current is spread to the light-emitting diode chip uniformly. | 04-30-2009 |
| 20090065794 | Light emitting diode device and manufacturing method therof - A light-emitting diode (LED) device and manufacturing methods thereof are provided, wherein the LED device comprises a substrate, a first type conductivity semiconductor layer, an active layer, a second type conductivity semiconductor layer, a transparent conductive oxide stack structure, a first electrode, and a second electrode. The first semiconductor layer on the substrate has a first portion and a second portion. The active layer and the second semiconductor layer are subsequently set on the first portion. The transparent conductive oxide stack structure on the second semiconductor layer has at least two resistant interfaces. The first electrode is above the second portion, and the second electrode is above the transparent conductive oxide stack structure. | 03-12-2009 |
| 20090057696 | Light emitting diode device and manufacturing method therof - A light-emitting diode device (LED) device and manufacturing methods thereof are provided, wherein the LED device comprises a substrate, a first n-type semiconductor layer, an n-type three-dimensional electron cloud structure, a second n-type semiconductor layer, an active layer and a p-type semiconductor layer. The first n-type semiconductor layer, the n-type three-dimensional electron cloud structure, the second n-type semiconductor layer, the active layer and the p-type semiconductor layer are subsequently grown on the substrate. | 03-05-2009 |
| 20090050930 | Light-emitting device and the manufacturing method thereof - This invention provides an optoelectronic semiconductor device having a rough surface and the manufacturing method thereof. The optoelectronic semiconductor device comprises a semiconductor stack having a rough surface and an electrode layer overlaying the semiconductor stack. The rough surface comprises a first region having a first topography and a second region having a second topography. The method comprises the steps of forming a semiconductor stack on a substrate, forming an electrode layer on the semiconductor stack, thermal treating the semiconductor stack, and wet etching the surface of the semiconductor stack to form a rough surface. | 02-26-2009 |
| 20090045435 | Stamp having nanoscale structure and applications therefore in light-emitting device - A stamp having a nanoscale structure and a manufacturing method thereof are disclosed. The stamp includes a substrate, a buffer layer, and a nanoscale stamp layer. The method comprises forming a buffer layer on the substrate, and forming a stamp layer having a nanoscale structure on the buffer layer. | 02-19-2009 |
| 20090029492 | Method of making light emitting diode - A method of making a light emitting diode (LED) is disclosed. The LED of the present invention comprises a semiconductor layer of a first polarity, an active layer, and a semiconductor layer of a second polarity stacked from bottom to up, wherein a stacked structure at least composed of the active layer and the semiconductor layer of the second polarity have a side with a wave-shape border in a top view of the LED and/or at least one valley, thereby increasing the efficiency of emitting the light to the outside of the LED. | 01-29-2009 |
| 20090021926 | Wavelength converting system - An embodiment of the invention discloses a wavelength converting system capable of emitting a second electromagnetic radiation having a second wavelength in response to a first electromagnetic radiation having a first wavelength, wherein an energy level of the first electromagnetic radiation is higher than that of the second electromagnetic level, and a positive correlation is between the first wavelength and the second wavelength. | 01-22-2009 |
| 20090020776 | Light-emitting device - A light-emitting device comprises a channel structure in the semiconductor layer for connecting an electrode and an ohmic contact layer by means of a substrate transfer process including a wafer-bonding process and a substrate-lifting-off process. The channel structure is formed in the semiconductor stack for electrically connecting the ohmic contact layer and the electrode and driving the current into the light-emitting device. Thereby, a horizontal type or a vertical type of light-emitting device has a good ohmic contact and high light efficiency. | 01-22-2009 |
| 20090014744 | Semiconductor light-emitting device and method - The present invention discloses a semiconductor light-emitting device including a semiconductor light-emitting element, a first attaching layer and a wavelength conversion structure. The primary light emitted from the semiconductor light-emitting element enters the wavelength conversion structure to generate a converted light, whose wavelength is different form that of the primary light. In addition, the present invention also provides the method for forming the same. | 01-15-2009 |
| 20080315236 | Optoelectronic semiconductor device and manufacturing method thereof - An embodiment of the invention discloses an optoelectronic semiconductor device comprising a semiconductor system capable of performing a conversion between light energy and electrical energy; an interfacial layer formed on at least two surfaces of the semiconductor system; an electrical conductor; and an electrical connector electrically connecting the semiconductor system to the electric conductor. | 12-25-2008 |
| 20080308834 | LIGHT-EMITTING DIODE - A light-emitting diode (LED) is provided, wherein the LED comprises an epitaxial structure, a bonding layer and a composite substrate. The composite substrate comprises a patterned substrate having a pattern and a conductive material layer disposed around the patterned substrate. The bonding layer is formed on the composite substrate. The epitaxial structure is formed on the bonding layer. | 12-18-2008 |
| 20080308832 | Light-emitting device - A light-emitting device comprises a semiconductor light-emitting stack; and an optical field tuning layer formed on the semiconductor light-emitting stack to change beam angles of the light-emitting device. | 12-18-2008 |
| 20080308818 | Light-emitting device - A light-emitting device includes an LED chip emitting a primary light, and a phosphor deposited on the LED chip for absorbing the primary light to excite a secondary light, wherein the wavelength of the primary light is shorter than 430 nm and the LED chip is driven by current density greater than 200 mA/cm | 12-18-2008 |
| 20080303048 | Semiconductor light emitting device - This invention discloses a light emitting semiconductor device including a light-emitting structure and an external optical element. The optical element couples to the light-emitting structure circumferentially. In addition, the refractive index of the external optical element is greater than or about the same as that of a transparent substrate of the light-emitting structure, or in-between that of the transparent substrate and the encapsulant material. | 12-11-2008 |
| 20080303047 | Light-emitting diode device and manufacturing method therof - A light-emitting diode (LED) device and manufacturing methods thereof are disclosed, wherein the LED device comprises a substrate, a plurality of micro-lens, a reflector, a first conductivity type semiconductor layer, an active layer, a second conductivity type semiconductor layer, a first electrode and a second electrode. The substrate has a plurality of micro-lens on its upper surface. The first conductivity type semiconductor layer is on the upper surface of the substrate. The active layer and the second conductivity type semiconductor layer are sequentially on a portion of the first conductivity type semiconductor layer. The first electrode is on the other portion of the first conductivity type semiconductor layer uncovered by the active layer. The second electrode is on the second conductivity type semiconductor layer. The reflector layer is on a lower surface of the substrate. | 12-11-2008 |
| 20080246052 | Electronic component assembly with composite material carrier - The present invention relates to an electronic component assembly including a composite material carrier, a circuit carrier made of a dielectric material, a circuit with a conductive material formed on the circuit carrier, an intermediate layer between the circuit carrier and the composite material carrier, and an electronic component arranged on the composite material carrier and electrically connecting to the circuit. | 10-09-2008 |
| 20080246018 | Light-emitting device - A light-emitting device includes a substrate, an n-type semiconductor layer, an active layer, and a p-type semiconductor layer; wherein the active layer is a multi-quantum-well (MQW) active layer with a predetermined n-type doping profile. More specifically, the MQW active layer is doped with n-type dopants in the region near the p-type semiconductor layer and the n-type semiconductor layer, and the central region is not doped with the n-type dopants. | 10-09-2008 |
| 20080241526 | Semiconductor light-emitting device having stacked transparent electrodes - This application is related to a semiconductor light-emitting device including a substrate, a semiconductor epitaxial layer over the substrate and having a first surface distant from the substrate, a first transparent conductive layer formed on the first surface, and a second transparent conductive layer formed on the first transparent conductive layer and having a second surface smaller than a first surface of the first transparent conductive layer. | 10-02-2008 |
| 20080230791 | Optoelectronic device - An optoelectronic device such as a light-emitting diode chip is disclosed. It includes a substrate, a multi-layer epitaxial structure, a first metal electrode layer, a second metal electrode layer, a first bonding pad and a second bonding pad. The multi-layer epitaxial structure on the transparent substrate comprises a semiconductor layer of a first conductive type, an active layer, and a semiconductor layer of a second conductive type. The first bonding pad and the second bonding pad are on the same level. Furthermore, the first metal electrode layer can be patterned so the current is spread to the light-emitting diode chip uniformly. | 09-25-2008 |
