EPIPLUS CO., LTD. Patent applications |
Patent application number | Title | Published |
20110133231 | EXTENSIVE AREA LED HAVING ROUGNESS SURFACE - The structure for fixing packing of a lid ( | 06-09-2011 |
20100015739 | SEMICONDUCTOR LIGHT EMITTING DEVICE HAVING IMPROVED LUMINANCE AND MANUFACTURING METHOD THEREOF - In the semiconductor light emitting device manufacturing method, a surface of a substrate, on which the semiconductor light emitting device is to be manufactured, is etched, thus forming a plurality of deep trenches. Semiconductor films are sequentially grown on the surface of the substrate in which the deep trenches are formed. The deep trenches are formed to have predetermined depth, so that, even if the semiconductor films are grown on the surface of the substrate, voids are formed in regions of the substrate in which the trenches are formed, and the voids are used as reflectors for light generated by the semiconductor light emitting device. | 01-21-2010 |
20100006885 | ARRANGEMENT OF ELECTRODES FOR LIGHT EMITTING DEVICE - A light emitting diode includes an n-GaN layer on a substrate, an active layer exposing a part of the n-GaN layer, a p-GaN layer on the active layer, a cathode contacting the exposed n-GaN layer and extending from one side of the active layer toward the other side, and an anode formed on the p-GaN layer and including a plurality of sub-electrodes spaced apart from both sides of the cathode and an edge of the active layer at the same distance. | 01-14-2010 |