| ENSILTECH CORPORATION Patent applications |
| Patent application number | Title | Published |
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| 20130089954 | METHOD OF FABRICATING ELECTRONIC DEVICE HAVING FLEXIBLE DEVICE - There is provided a method of fabricating an electronic device having a flexible device, which is fabricated using a support substrate by Joule-heating induced film separation (JIFS). A method of fabricating an electronic device having a flexible device includes providing a support substrate, coating a conductive layer on one surface of the support substrate, forming a plastic substrate on the other surface of the support substrate, forming one or more thin-film transistors (TFTs) on the plastic substrate, forming an electronic device electrically connected to any one of the TFTs, and separating the plastic substrate from the conductive layer by generating Joule-heating through application of an electric field to the conductive layer. Accordingly, the flexible device can be separated from the support substrate without deformation of the support substrate and degradation of the electronic device. Since the separation time is short, it is easy to fabricate a large-area device, and the fabrication yield can be improved. | 04-11-2013 |
| 20130047920 | DEPOSITION DEVICE FOR FORMING ORGANIC LAYER USING JOULE-HEATING AND DEVICE FOR FABRICATING ELECTROLUMINESCENT DISPLAY DEVICE USING THE DEPOSITION DEVICE - There are provided a deposition device for forming an organic layer using Joule heating and a device for fabricating an electroluminescent display device using the deposition device that includes a cleansing device, an organic matter coating device, an electric field applying device and a loadlock chamber. The cleansing device cleanses a donor substrate. The organic matter coating device coats an organic matter on the donor substrate. The electric field applying device allows the organic matter to be transferred onto an element substrate. Here, the organic matter is heated by the Joule-heating generated by applying an electric field to the donor substrate having the organic matter formed thereon. The loadlock chamber loads or carries out the donor substrate into/from the electric field applying device. Accordingly, the present invention is advantageous in fabricating a large-scale element, and it is possible to increase a processing speed and to reduce device cost. | 02-28-2013 |
| 20120164819 | APPARATUS AND METHOD FOR MANUFACTURING POLY-SI THIN FILM - An apparatus and method for fabricating a polycrystalline silicon (poly-Si) thin film are provided. The apparatus includes a chamber, a substrate stage installed at a lower portion in the chamber and on which a substrate including a conductive layer is located, a power application unit installed at an upper portion in the chamber and including an electrode terminal applying power to the conductive layer, and a conductive pad interposed between the electrode terminal and the conductive layer. Thus, it is possible to form a uniform electric field on the conductive layer, and to form a good quality of poly-Si thin film. | 06-28-2012 |
| 20110121308 | THIN FILM TRANSISTOR AND MANUFACTURING METHOD THEREOF - Provided are a thin film transistor including a polycrystalline silicon layer having improved crystallinity by applying Joule heat to form stress gradient in a glass substrate that is disposed under an amorphous silicon layer from a surface to a predetermined depth of the glass substrate, thereby crystallizing the amorphous silicon layer into a polycrystalline silicon layer, and a method of fabricating the same. The film transistor includes a glass substrate having stress gradient from an upper surface to a predetermined depth, a semiconductor layer disposed on the glass substrate, and formed of a polycrystalline silicon layer crystallized by Joule heating, a gate insulating layer disposed on the semiconductor layer, a gate electrode disposed on the gate insulating layer, an interlayer insulating layer disposed on the gate electrode, and source and drain electrodes disposed on the interlayer insulating layer, and electrically connected to source and drain regions of the semiconductor layer. | 05-26-2011 |
| 20110115370 | Sealing Substrate, Organic Electroluminescence Apparatus and Method of Fabricating the Same - An organic electroluminescence apparatus comprises: a substrate having a pixel region and sealing regions; an organic electroluminescence device located in the pixel region of the substrate; and a sealing substrate having a pixel region and sealing regions corresponding to the pixel region and the sealing regions of the substrate. The sealing regions of the sealing substrate comprise conductive layers continuously connected to each other. In a method of manufacturing organic electroluminescence apparatus by sealing the substrate and the sealing substrate using a glass frit, manufacturing costs and process time can be greatly reduced. | 05-19-2011 |
| 20100313397 | APPARATUS FOR MANUFACTURING POLYCRYSTALLINE SILICON THIN FILM - Provided is an apparatus for manufacturing a polysilicon thin film by depositing an amorphous silicon thin film and an upper silicon dioxide substrate on a lower silicon dioxide substrate, forming a conductive thin film on the upper silicon dioxide substrate, and applying an electric field and performing Joule heating to crystallize the amorphous silicon thin film, the apparatus comprising power terminals for elastically contacting both upper ends of the conductive thin film and supplying power to the conductive thin film, and support members for elastically supporting the substrate such that the power terminals closely contact both upper ends of the conductive thin film to form a uniform electric field at the conductive thin film. Therefore, it is possible to apply an electric field to a conductive thin film and perform Joule heating to crystallize an amorphous silicon thin film, and support members are installed at both lower surfaces of a silicon dioxide substrate to elastically support the silicon dioxide substrate such that power terminals closely contact both upper ends of the conductive thin film, thereby forming a uniform electric field at the conductive thin film to efficiently perform crystallization within a short time. | 12-16-2010 |
| 20100270558 | FABRICATING METHOD OF POLYCRYSTALLINE SILICON THIN FILM, POLYCRYSTALLINE SILICON THIN FILM FABRICATED USING THE SAME - Provided are a method of fabricating a polycrystalline silicon thin film using high temperature heat generated by Joule heating induced by application of an electrical field to a conductive layer, which can ensure process stability at high temperature and thus processing time can be reduced and a polycrystalline silicon thin film having excellent crystallinity can be obtained, a polycrystalline thin film using the method and a thin film transistor including the polycrystalline thin film. The method includes providing a substrate, forming a metal or metal alloy layer having a melting point of 13000 C or more on the substrate, forming an insulating layer on the metal or metal alloy layer, forming an amorphous silicon (a-Si) thin film, an amorphous/polycrystalline composite silicon thin film, or a poly-Si thin film on the insulating layer, and applying an electrical filed to the metal or metal alloy layer to induce Joule heating and generate high temperature heat, and crystallizing and annealing the amorphous silicon (a-Si) thin film, the amorphous/polycrystalline composite silicon thin film, or the poly-Si thin film using the high temperature heat. | 10-28-2010 |
| 20100244038 | THIN FILM TRANSISTOR AND FABRICATING METHOD OF THE SAME - Provided are thin film transistor, a method of fabricating the same, a flat panel display device including the same, and a method of fabricating the flat panel display device, that are capable of applying an electric field to a gate line to form a channel region of a semiconductor layer of a thin film transistor using a polysilicon layer crystallized by a high temperature heat generated by Joule heating of a conductive layer. As a result, a process can be simplified using a gate line included in the thin film transistor as the conductive layer, and the channel region of the semiconductor layer can be formed of polysilicon having a uniform degree of crystallinity. The thin film transistor includes a straight gate line disposed in one direction, a semiconductor layer crossing the gate line, and source and drain electrodes connected to source and drain regions of the semiconductor layer. | 09-30-2010 |
| 20100233858 | METHOD OF PREVENTING GENERATION OF ARC DURING RAPID ANNEALING BY JOULE HEATING - Disclosed herein is a rapid annealing method in a mixed structure composed of a heat treatment-requiring material, dielectric layer and conductive layer, comprising that during rapid annealing on a predetermined part of the heat treatment-requiring material, by instantaneously generated intense heat due to Joule heating by application of an electric field to the conductive layer, the potential difference between the heat treatment-requiring material and the conductive layer is set lower than the dielectric break-down voltage of the dielectric layer, thereby preventing generation of arc by dielectric breakdown of the dielectric layer during the annealing. | 09-16-2010 |
