| 20090042342 | METHOD FOR CRYSTALLIZATION OF AMORPHOUS SILICON BY JOULE HEATING - The present invention provides a method for preparation of crystallization of amorphous silicon thin film, which comprises providing a forming a amorphous silicon on a dielectric film formed on a transparent substrate; then forming a conductive layer on the top surface of substrate; applying an electric field to the conductive layer so as to generate heat; and crystallization of amorphous silicon thin film by the generated heat. | 02-12-2009 |
