| 20100159400 | COMPOSITION FOR REMOVING A PHOTORESIST PATTERN AND METHOD OF FORMING A METAL PATTERN USING THE COMPOSITION - A composition for removing a photoresist pattern includes about 5 percent by weight to about 20 percent by weight of an aminoethoxy ethanol, about 2 percent by weight to about 10 percent by weight of a polyalkylene oxide, about 10 percent by weight to about 30 percent by weight of a glycol ether compound, and a remainder of an aprotic polar solvent including a nitrogen. Thus, the photoresist pattern can be easily removed from a substrate, thereby improving the removing ability of the composition. In addition, a residual amount of the photoresist pattern may be minimized, thereby improving the reliability of removing the photoresist pattern. | 06-24-2010 |
