| EncoreSolar, Inc. Patent applications |
| Patent application number | Title | Published |
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| 20120132283 | CADMIUM TELLURIDE SOLAR CELL AND METHOD OF FABRICATING THE SAME - A thin film solar cell includes a buffer layer disposed between a transparent conductive layer and a junction partner layer. The solar cell has an absorber layer made from a Group II-VI compound which is in contact with the junction partner layer. The buffer layer is made from at least one of cadmium doped tin oxide, indium sulfide, tin doped indium sulfide, gallium sulfide and tin doped gallium sulfide. | 05-31-2012 |
| 20120043215 | METHOD AND APPARATUS FOR ELECTRODEPOSITING LARGE AREA CADMIUM TELLURIDE THIN FILMS FOR SOLAR MODULE MANUFACTURING - Embodiments of the inventions provide methods and apparatus to electroplate films of tellurides such as CdTe, or its alloys on multiple large area workpieces. In one embodiment a method of forming a solar cell absorber film on multiple work pieces uses a self adjusting mechanism taking advantage of the high resistivity of the solar cell absorber film. Larger deposits of the plating material onto one workpiece, due for example, to non-uniformity of solution flow, results in larger resistance thus decreasing the current flowing through that workpiece. The decreased current then deposits less material over that workpiece. In another embodiment multiple workpieces can be electroplated using a single power supply in a single plating bath. | 02-23-2012 |
| 20110284078 | METHOD OF FORMING CADMIUM TELLURIDE THIN FILM - A method of forming a metal telluride (MTe) film on a base where M is Cd and optionally additionally may include at least one of Zn, Hg, Mn and Mg, involves depositing a Te-rich precursor layer on a base and reaction of the Te-rich precursor layer with an M-containing material at elevated temperature. The Te-rich precursor film is one of a MTex compound film with an x value larger than 1, a composite film comprising MTe and Te, and a composite film comprising a MTex compound film with an x value larger than 1. In a preferred embodiment the Te-rich precursor layer is electrodeposited. In another preferred embodiment both the Te-rich precursor layer and the M-containing material are electrodeposited. In yet another preferred embodiment the Te-rich precursor film is one of a CdTex compound film with an x value larger than 1, a composite film comprising CdTe and Te, and a composite film comprising a CdTex compound film with an x value larger than 1; and the Te-rich precursor film is reacted with Cd to form a stoichiometric CdTe film on the base. | 11-24-2011 |
| 20110284065 | METHOD OF FORMING BACK CONTACT TO A CADMIUM TELLURIDE SOLAR CELL - A method of forming an ohmic contact to a surface of a Cd and Te containing compound film as may be found, for example in a photovoltaic cell. The method comprises forming a Te-rich layer on the surface of the Cd and Te containing compound film; depositing an interface layer on the Te-rich layer; and laying down a contact layer on the interface layer. The interface layer is composed of a metallic form of Zn and Cu. | 11-24-2011 |
| 20110259424 | METHOD OF FABRICATING SOLAR CELLS WITH ELECTRODEPOSITED COMPOUND INTERFACE LAYERS - A method of fabricating a solar cell involves electroplating a Group IIB-VIA material as a first or sub-layer over a junction partner layer, and then forming a second layer, also of a Group IIB-VIA material over the sub-layer. Both the sub-layer and the second layer comprise Te. The electroplating is performed at relatively low temperatures, as for example, below 100° C. Forming the sub-layer by low temperature electroplating produces a small grained compact film that protects the interface between the sub-layer and the junction partner during the formation of the second layer. The second layer may be formed by physical vapor deposition or ink deposition. A solar cell has a first layer of a stoichiometric Group IIB-VIA material formed on a CdS film, and a second layer of a Group IIB-V1A material. Both the first and second layers contain Te. The first layer may comprise CdTe with a grain size small than 0.5 microns and the second layer may comprise CdTe with a grin size in the range of 1-5 microns. | 10-27-2011 |
