| Elpida Memory, Inc. Patent applications |
| Patent application number | Title | Published |
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| 20120129339 | METHOD OF MANUFACTURING A SEMICONDUCTOR DEVICE HAVING A CONTACT PLUG - There is provided a semiconductor device that includes: a transistor having a gate electrode, a source region, and a drain region; a first inter-layer insulation film covering the transistor; a first contact plug formed penetrating through the first inter-layer insulation film and connected to either the source region or the drain region; a second inter-layer insulation film covering the first contact plug; a groove extending in the second inter-layer insulation film in a same direction as an extending direction of the gate electrode and exposing a top surface of the first contact plug at a bottom thereof; a second contact plug connected to the first contact plug and formed in the groove; and a wiring pattern extending on the second inter-layer insulation film so as to traverse the groove and integrated with the second contact plug. | 05-24-2012 |
| 20120127817 | SEMICONDUCTOR DEVICE HAVING RESET FUNCTION - A semiconductor device comprises a memory cell array, a row control circuit for controlling an access to the memory cell array, and a refresh control circuit for instructing the row control circuit to refresh the memory cell array. After temporarily transiting to a reset state due to an activation of a reset signal, the refresh control circuit instructs to refresh the memory cell array in response to a transition to an initial state due to a de-activation of the reset signal. | 05-24-2012 |
| 20120127816 | SEMICONDUCTOR DEVICE HAVING HIERARCHICAL BIT LINE STRUCTURE - Disclosed herein is a semiconductor device comprising a memory cell, a local bit line coupled to the memory cell, a global bit line provided correspondingly to the local bit line, and a bit line control circuit coupled between the local bit line and the global bit line. The bit line control circuit includes a restoring circuit that is activated in a refresh mode to refresh data of the memory cell while being in electrical isolation from the global bit line. | 05-24-2012 |
| 20120127812 | SEMICONDUCTOR DEVICE, ADJUSTMENT METHOD THEREOF AND DATA PROCESSING SYSTEM - A device includes a first semiconductor chip that includes a first memory cell array including a plurality of first memory cells, a first control logic circuit accessing the first memory cell array and producing a plurality of first data signals in response to data stored in selected ones of the first memory cells, a plurality of first data electrodes, and a first data control circuit coupled to the first control logic circuit and the first data electrodes. A second semiconductor chip includes a second memory cell array including a plurality of second memory cells, a second control logic circuit accessing the second memory cell array and producing a plurality of second data signals in response to data stored in selected ones of the second memory cells. The second control logic circuit is configured to store second timing adjustment information and to produce a second output timing signal. | 05-24-2012 |
| 20120127773 | SEMICONDUCTOR DEVICE HAVING DATA BUS - A semiconductor device is disclosed which comprises a first wiring layer, a second wiring layer formed over the first wiring layer, data input/output terminals, and a data bus formed in the first and second wiring layers. The data bus includes N data lines transmitting data between a predetermined circuit and the input/output terminals. M first data lines among the N data lines have a length shorter than a predetermined length and residual N-M second data lines have a length longer than the predetermined length. Shield lines adjacent to the N data lines are formed in the first and second layers. The N data lines are arranged at positions at which the data lines do not overlap one another in a stacking direction of the first and second wiring layers. | 05-24-2012 |
| 20120127675 | APPARATUS HAVING A WIRING BOARD AND MEMORY DEVICES - An address signal line having a stub structure connects between at least three memory elements and a data transferring element and transmits address signals for the memory elements. An address terminal of the data transferring element has an impedance lower than a characteristic impedance of the address signal line. A wiring length TL | 05-24-2012 |
| 20120126422 | SEMICONDUCTOR DEVICE HAVING PLURAL WIRING LAYERS - A semiconductor device includes a lower wiring layer, having signal lines and power supply lines extending in a Y-direction; an upper wiring layer having signal lines and power supply lines extending in an X-direction; via conductors provided in first overlap regions where corresponding signal lines overlap each other; and via conductors provided in second overlap regions where corresponding power supply lines overlap each other. The width in the X-direction of the first regions is wider than the widths in the X-direction of the second regions. Therefore, in the first regions, a plurality of via conductors can be provided. Moreover, the power supply lines are divided in the Y-direction to avoid interference with the first regions. On a plurality of lower-layer lines, two vias are placed at a minimum pitch containing one via. | 05-24-2012 |
| 20120124436 | SEMICONDUCTOR MEMORY DEVICE PERFORMING PARALLEL TEST OPERATION - A semiconductor memory device includes: first test circuits each of which operates in a first test mode in which the first test circuit receives a plurality of comparison result signals each indicating a comparison result of storage contents of a plurality of memory cells included in a memory cell array in parallel and generates a first output signal by converting the comparison result signals into serial signals or a second test mode in which the first test circuit generates a second output signal by compressing the data amount of the plurality of comparison result signals. Each of the first test circuits outputs the first and second output signals to a common bus. | 05-17-2012 |
| 20120122251 | STACKED TYPE SEMICONDUCTOR MEMORY DEVICE AND CHIP SELECTION CIRCUIT - A stacked type semiconductor memory device of having a structure in which a plurality of semiconductor chips is stacked and a desired semiconductor chip can be selected by assigning a plurality of chip identification numbers different from each other are individually assigned to the plurality of semiconductor chips comprising: a plurality of operation circuits which is connected in cascade in a stacking order of the plurality of semiconductor chips and outputs the plurality of identification numbers different from each other by performing a predetermined operation; and a plurality of comparison circuits which detects whether or not each the identification number and a chip selection address commonly connected to each the semiconductor chip are equal to each other by comparing them. | 05-17-2012 |
| 20120120754 | Semiconductor device including latency counter - For example, a semiconductor device includes a first latency counter, which selects whether to give an odd-cycle latency to an internal command signal; and a second latency counter, which gives a latency to an internal command signal at intervals of two cycles. The latency counters are connected in series. Since the number of bits in control information, which is used to set a latency, is smaller than the types of settable latency as a result, it is possible to reduce wiring density. | 05-17-2012 |
| 20120120753 | Semiconductor device having point-shift type FIFO circuit - For example, a semiconductor device includes latch circuits, whose input nodes are connected to an input selection circuit and whose output nodes are connected to an output selection circuit; and a control circuit, which controls the input selection circuit and the output selection circuit. The control circuit includes a shift register to generate an input pointer signal and a binary counter to generate an output pointer signal. The input selection circuit selects one of the latch circuits on the basis of a value of the input pointer signal. The output selection circuit selects one of the latch circuits on the basis of a value of the output pointer signal. Therefore, it is possible to prevent a hazard from occurring in the input selection circuit, as well as to reduce the number of signal lines that transmit the output pointer signal. | 05-17-2012 |
| 20120120751 | SEMICONDUCTOR DEVICE HAVING EQUALIZING CIRCUIT EQUALIZING PAIR OF BIT LINES - A semiconductor device includes: a sense amplifier including an equalizing circuit that equalizes a pair of bit lines; an equalizing control circuit that converts the amplitude of an equalizing signal into a VDD level, and a word driver that controls a sub word line based on a timing signal. The word driver includes a level shift circuit for changing the operation timing of the sub word line in accordance with the VDD level, allowing a timing to complete the equalizing operation and a timing to reset the sub word line to synchronize even when the level of the VDD level is changed. | 05-17-2012 |
| 20120120750 | SEMICONDUCTOR DEVICE HAVING ELECTRICAL FUSE AND CONTROL METHOD THEREOF - To provide an electrical fuse that is connected to a detection node via a selective transistor, a precharge transistor that precharges the detection node in a state where the selective transistor is off; a bias transistor that passes a bias current to the detection node in a state where the selective transistor is on and the precharge transistor is off, and a detection circuit that detects a potential of the detection node in a state where the bias current is flowing into the detection node, wherein the bias transistor reduces an amount of the bias current in a stepwise manner or a continuous manner. | 05-17-2012 |
| 20120120747 | SEMICONDUCTOR DEVICE - A first data amplifier connects to a first memory cell identified by an X-address signal and a selection signal obtained by predecoding a Y-address signal. A second data amplifier connects to a second memory cell identified by the X-address signal and a delayed selection signal obtained by delaying the selection signal. A generator generates a delayed operation clock signal by delaying an operation clock signal of the first data amplifier. A timing controller receives a first control signal for controlling an operation of the first data amplifier and a second control signal for controlling an operation of the second data amplifier, outputs the first control signal to the first data amplifier at a timing according to the operation clock signal, and outputs the second control signal to the second data amplifier at a timing according to the delayed operation clock signal. | 05-17-2012 |
| 20120120745 | Semiconductor device and information processing system including the same - A semiconductor device includes: an input node supplied with an input signal; an output node provided correspondingly to the input node; first and second input circuits coupled in parallel to each other between the input and output nodes; and a control circuit configured to control the first and second input circuits such that one of the first and second input circuits is switched over from an active state to an inactive state and the other of the first and second input circuits is switched over from an inactive state to an active state during the one of the first and second input circuits being still in the active state. | 05-17-2012 |
| 20120120735 | SEMICONDUCTOR DEVICE HAVING ELECTRICAL FUSE AND CONTROL METHOD THEREOF - To provide a plurality of fuse elements, each of which is either in a programmed state or a non-programmed state, a plurality of fuse determination circuits, each of which outputs a determination result signal that corresponds to a programmed state or a non-programmed state of the fuse element, and a plurality of latch circuits that commonly receive a first timing signal, and each of which latches and outputs the determination result signal synchronously with the first timing signal. | 05-17-2012 |
| 20120120706 | SEMICONDUCTOR MEMORY DEVICE - A plurality of contact plugs to be connected to a drain region or a source region of each of transistors constituting a sub-word line driver that drives a sub-word line are formed, by using a SAC line technique of selectively etching an insulation layer that covers each of the transistors by using a mask having line-shaped openings provided across a portion in which the contact plugs of each of the transistors are to be formed. | 05-17-2012 |
| 20120120705 | SEMICONDUCTOR DEVICE HAVING BIT LINES AND LOCAL I/O LINES - The present invention efficiently decides line failure and contact failure in a semiconductor device. The semiconductor device has a plurality of bit line groups in which connection with local I/O lines is controlled by the same column selection signal line. A failure detecting circuit compares a first data group read from a first bit line group and a second data group read from a second bit line group to detect whether or not connection failure (contact failure) with the column selection signal line occurs in one of the first and second bit line groups. | 05-17-2012 |
| 20120119578 | Semiconductor device having pull-up circuit and pull-down circuit - To reduce power supply noises occurring in a control circuit unit for controlling an output buffer. A semiconductor device includes unit buffers for driving a data output terminal, impedance control circuits for controlling the unit buffers, and a control circuit unit for controlling the impedance control circuits. The impedance control circuits and the control circuit unit operate by mutually-different power supplies, the control circuit unit supplies pull-up data and pull-down data in mutually reverse phase to the impedance control circuits, and the impedance control circuits convert the pull-up data and the pull-down data from reverse phase to in-phase and supply the same to the unit buffers. Thereby, a noise is difficult to occur in a power supply VDD used for the control circuit unit. | 05-17-2012 |
| 20120119356 | SEMICONDUCTOR APPARATUS AND SEMICONDUCTOR DEVICE - A semiconductor apparatus includes a semiconductor chip in which a plurality of electrode pads are provided on a main surface, and a plurality of bump electrodes are provided on the electrode pads of the semiconductor chip. The semiconductor apparatus also includes a wired board which is allocated in a side of the main surface of the semiconductor chip, and is positioned in a central area of the main surface of the semiconductor chip so as to be separated from an edge part of the semiconductor chip by at least 50 μm or more. The semiconductor apparatus also includes a plurality of external terminals which are provided on the wired board, and which are electrically connected to a plurality of bump electrodes through wirings of the wired board, and sealing part which is provided between the semiconductor chip and the wired board, is made of underfill material that covers a connection part between the bump electrode and the wiring. | 05-17-2012 |
| 20120119278 | SEMICONDUCTOR DEVICE AND METHOD OF FORMING THE SAME - A semiconductor device includes a semiconductor substrate and a first gate structure. The semiconductor substrate has a first groove and a first pillar defined by the first groove. The first groove and the first pillar are adjacent to each other. The first gate structure is disposed in the first groove. The first gate structure includes a first gate insulating film and a first gate electrode. The first gate structure is separated by a first gap from the first pillar. | 05-17-2012 |
| 20120118939 | PROCESS AND APPARATUS FOR MANUFACTURING SEMICONDUCTOR DEVICE - The process for manufacturing the semiconductor device and the apparatus, which achieve stable production of semiconductor devices with improved connection reliability, is presented. First terminals of circuit boards | 05-17-2012 |
| 20120115300 | METHOD FOR MANUFACTURING SEMICONDUCTOR MEMORY DEVICE - In a method for manufacturing a semiconductor memory device, a three dimensional lower electrode including a titanium nitride film is formed on a semiconductor substrate, and a dielectric film is formed on the surface of the lower electrode. After a first upper electrode is formed at a temperature that the crystal of the dielectric film is not grown on the surface of the dielectric film, the first upper electrode and the dielectric film are heat-treated at a temperature that the crystal of the dielectric film is grown to convert at least a portion of the dielectric film into a crystalline state. Thereafter, a second upper electrode is formed on the surface of the first upper electrode. | 05-10-2012 |
| 20120113736 | Semiconductor device having hierachical bit line structure - A semiconductor device of the invention comprise a memory cell array configured with hierarchical local bit lines and global bit lines, in which there are provide local bit lines, global bit lines, switches controlling a connection between the global bit lines, sense amplifiers, and a control circuit controlling the switches. In a first period, each sense amplifier amplifies a signal of one of adjacent global bit lines, and in a second period, each sense amplifier amplifies a signal of the other thereof. Accordingly, coupling between the global bit lines can be suppressed. | 05-10-2012 |
| 20120113735 | Semiconductor device having current change memory cell - A semiconductor device comprises a first transistor connected between a bit line and a sense node, and a second transistor amplifying a signal of the sense node. A first potential applied to a gate of the first transistor, a second potential supplied to the sense node, and a third potential supplied to the bit line are controlled so that the first potential applied to a gate of the first transistor is between the second and third potentials, the second potential is set larger than the third potential, and a predetermined potential obtained by subtracting a threshold voltage of the first transistor from the first potential is smaller than the third potential and higher than a low potential supplied to the second transistor. A potential of the bit line transitions from the third potential toward the low potential in accordance with data of a current change memory cell. | 05-10-2012 |
| 20120113734 | SEMICONDUCTOR DEVICE - A semiconductor device includes a bit line; a data bus line corresponding to the bit line; a selection transistor that controls electrical connection between the bit line and the data bus line; a write amplifier that writes data to the bit line through the data bus; and a test circuit. The test circuit sets the bit line to a first potential during a test period regardless of an operation of the write amplifier, sets the data bus line to a second potential and then sets the data bus line in a floating state to detect transition of the data bus line from the second potential to the first potential, with the selection transistor being activated to electrically connect the bit line and the data bus line. | 05-10-2012 |
| 20120112829 | SEMICONDUCTOR DEVICE AND METHOD OF CONTROLLING THE SAME - A semiconductor device includes a regulator including an operational amplifier configured of a current mirror and generating the second voltage V | 05-10-2012 |
| 20120112563 | SEMICONDUCTOR DEVICE INCLUDING A PAIR OF SHIELD LINES - A semiconductor device includes a first circuit, a second circuit, a first wire, and a pair of shield lines. The first circuit includes a voltage generating circuit generating a predetermined voltage and produces the predetermined voltage at an output end thereof. The first wire connects the output end of the first circuit to an input end of the second circuit. The pair of shield lines is disposed so as to sandwich the first wire therebetween. One of the shield lines is supplied with a power supply potential for driving at least one of the voltage generating circuit and the second circuit. Another of the shield lines is supplied with a ground potential for driving at least one of the voltage generating circuit and the second circuit. | 05-10-2012 |
| 20120112271 | SEMICONDUCTOR DEVICE, METHOD OF FORMING SEMICONDUCTOR DEVICE, AND DATA PROCESSING SYSTEM - A semiconductor device includes the following elements. A semiconductor substrate includes an isolation region. The semiconductor substrate has a groove in the isolation region. A pad electrode is disposed in the groove. A pad contact plug is disposed in the groove. The pad contact plug is disposed on the pad electrode. A gate contact plug is disposed on the pad contact plug. The gate contact plug is electrically coupled through the pad contact plug to the pad electrode. An insulating side wall is disposed in the groove. The insulating side wall covers side surfaces of the pad contact plug and a lower portion of the gate contact plug, and the insulating side wall covers a part of an upper surface of the pad electrode. | 05-10-2012 |
| 20120112258 | SEMICONDUCTOR DEVICE AND METHOD OF FORMING THE SAME - A semiconductor device includes the following elements. A semiconductor substrate has a device formation region. The device formation region is defined by first and second device isolation regions which extend in first and second directions, respectively. The device formation region has a first gate groove which extends in the second direction. A first gate insulating film is disposed in a lower portion of the first gate groove. A first gate electrode is disposed on the first gate insulating film. The first gate electrode is disposed in the lower portion of the first gate groove. A buried insulating film is disposed over the first gate electrode. The buried insulating film is disposed in an upper portion of the first gate groove. | 05-10-2012 |
| 20120109561 | WAFER TEST APPARATUS, WAFER TEST METHOD, AND PROGRAM - A wafer test apparatus, comprises: a storage unit that stores a first test program including a plurality of first operation test programs and a second test program including a plurality of second operation test programs; and a calculation unit that executes the first test program on at least one of wafers in a lot and outputs accumulated information about a defective memory cell(s) included in the wafer to the outside thereof when each operation test of the plurality of first operation tests is completed, and executes the second test program on remaining wafers in the lot and outputs accumulated information about a defective memory cell(s) included in the wafer to the outside thereof when all the operation tests in the plurality of second operation tests are completed. | 05-03-2012 |
| 20120106229 | Semiconductor device - To include stacked plural core chips, each of which includes a first through silicon via for transferring write data and a second through silicon via for transferring read data, and an interface chip commonly connected to the core chips. The interface chip includes a data input/output terminal, an input buffer provided between the data input/output terminal and the first through silicon via, and an output buffer provided between the data input/output terminal and the second through silicon via. With this configuration, the write data and the read data are transferred through the different through silicon vias, whereby the collision of data is not caused even when continuous accesses are made to different ranks. | 05-03-2012 |
| 20120104487 | SEMICONDUCTOR DEVICE AND METHOD OF FORMING THE SAME - A semiconductor device may include, but is not limited to, a transistor and a contact plug pillar of an impurity-diffused semiconductor. The transistor includes a semiconductor channel pillar having a vertical channel; and a first diffusion region adjacent to a lower portion of the semiconductor channel pillar. The contact plug pillar of an impurity-diffused semiconductor is coupled to the first diffusion region. | 05-03-2012 |
| 20120104344 | SEMICONDUCTOR DEVICE - A semiconductor device includes a semiconductor element. The semiconductor element comprises a first insulating film, a resistance changing layer, a first electrode, a buried layer, and a second electrode. The first electrode is formed within the opening so as to cover side and bottom surfaces of an inner wall of the opening and so as to include a recessed portion and is in contact with the resistance changing layer via the upper end thereof. The second electrode is formed on the resistance changing layer so as to interpose the resistance changing layer between the second electrode, and the upper end of the first electrode and the buried layer. The semiconductor element changes an electronic resistance between the first and second electrodes by reversibly forming a conductive bridge in the resistance changing layer between the upper end of the first electrode and the second electrode. | 05-03-2012 |
| 20120100702 | METHOD OF FORMING A SEMICONDUCTOR DEVICE - A method for forming a semiconductor device includes the following processes. A first well including a memory cell region of a semiconductor substrate is formed. A second well including a first peripheral circuit region of the semiconductor substrate is formed after forming the first well. | 04-26-2012 |
| 20120100682 | Manufactruing method of semiconductor device having vertical type transistor - A manufacturing method of a semiconductor device includes the steps of: forming an insulating pillar on the main surface of a silicon substrate; forming a protective film on the side surface of the insulating pillar; forming a silicon pillar on the main surface of the silicon substrate; forming a gate insulating film on the side surface of the silicon pillar; and forming first and second gate electrodes so as to contact each other and so as to cover the side surfaces of the silicon pillar and insulating pillar, respectively. According to the present manufacturing method, the protective film is formed on the side surface of the insulating pillar as a dummy pillar, thus preventing the dummy pillar from being eroded when the silicon pillar for channel is processed into a transistor. Therefore, it is possible to reduce a probability of occurrence of gate electrode disconnection. | 04-26-2012 |
| 20120100678 | METHOD FOR FORMING SEMICONDUCTOR DEVICE - A method of forming a semiconductor device includes the following processes. A first interlayer insulating film is formed over a cell transistor and a peripheral transistor. A cell contact hole is formed in the first interlayer insulating film, the cell contact hole reaching the cell transistor. A lower contact plug is formed at a bottom of the cell contact hole. A peripheral contact hole is formed in the first interlayer insulating film, the peripheral contact hole reaching the peripheral transistor. A first peripheral contact plug is simultaneously formed in the peripheral contact hole and an upper contact plug in the cell contact hole, the upper contact plug being disposed on the lower contact plug. | 04-26-2012 |
| 20120098145 | SEMICONDUCTOR DEVICE AND METHOD OF FORMING THE SAME - A semiconductor device includes a chip stacked structure. The chip stacked structure may include, but is not limited to, first and second semiconductor chips. The first semiconductor chip has a first thickness. The second semiconductor chip has a second thickness that is thinner than the first thickness. | 04-26-2012 |
| 20120098115 | Semiconductor device and method of manufacturing the same - A semiconductor device has a substrate, a semiconductor chip mounted on the substrate, an encapsulating body encapsulating the semiconductor chip on the substrate, and a plurality of heat sink plates embedded in the encapsulating body so as to have a surface that is exposed to an exterior of the encapsulating body and positioned on the same plane. The heat sink plates are spaced from each other. | 04-26-2012 |
| 20120092943 | Semiconductor device and test method thereof - plurality of core chips to which chip identification information different from each other is allocated and an interface chip are layered, the plurality of core chips are commonly connected to the interface chip through a first current path including at least a through silicon via, the interface chip serially supplies an enable signal to the plurality of core chips through the first current path, and the plurality of core chips are activated based on a logic level of a bit corresponding to the chip identification information among a plurality of bits configuring the enable signal. The present invention can reduce the number of through silicon vias required to supply an enable signal. | 04-19-2012 |
| 20120091520 | SEMICONDUCTOR DEVICE, METHOD FOR FORMING THE SAME, AND DATA PROCESSING SYSTEM - A semiconductor device includes a semiconductor substrate, a first interlayer insulating film over the semiconductor substrate, a first interconnect over the first interlayer insulating film, and a via plug penetrating the semiconductor substrate and the first interlayer insulating film. The via plug is coupled to the first interconnect. | 04-19-2012 |
| 20120091518 | SEMICONDUCTOR DEVICE, METHOD FOR FORMING THE SAME, AND DATA PROCESSING SYSTEM - A semiconductor device includes a semiconductor substrate having a first groove, a word line in the first groove, and a buried insulating film in the first groove. The buried insulating film covers the word line. The buried insulating film comprises a silicon nitride film. | 04-19-2012 |
| 20120086084 | SEMICONDUCTOR DEVICE - A semiconductor device comprise a memory cell region and a peripheral circuit region on a semiconductor substrate, and a metal laminating wiring extending over the memory cell region and the peripheral circuit region. The metal laminating wiring is a bit line in the memory cell region, and is a portion of a wiring for the peripheral circuit region connected to the bit line and a portion of a gate electrode connected to the wiring for the peripheral circuit region, in the peripheral circuit region. A height of a bottom surface of the metal laminating wiring disposed in the memory cell region, from an upper surface of the semiconductor substrate is substantially the same as the height of the bottom surface of the metal laminating wiring disposed in the peripheral circuit region, from the upper surface of the semiconductor substrate. | 04-12-2012 |
| 20120086063 | SEMICONDUCTOR DEVICE - A semiconductor device includes a semiconductor substrate having a memory cell region and a peripheral circuit region; a bit line extending over the memory cell region and the peripheral circuit region, the bit line including a first portion in the peripheral circuit region; and a sense amplifier in the peripheral circuit region. The sense amplifier includes a transistor having a gate electrode which includes the first portion of the bit line. | 04-12-2012 |
| 20120086060 | SEMICONDUCTOR DEVICE AND METHOD OF FORMING THE SAME - A semiconductor device includes a semiconductor substrate, a gate electrode, a dummy gate electrode, and a first impurity diffusion region. The semiconductor substrate has first and second grooves. The gate electrode is in the first groove. The dummy gate electrode is in the second groove. The dummy gate electrode has a first top surface. The first impurity diffusion region in the semiconductor substrate is positioned between the first and second grooves. The first top surface is positioned at a lower level than a bottom of the first impurity diffusion region. | 04-12-2012 |
| 20120081093 | Switching regulator - A switching regulator includes: a switching element that controlling supply of power supply voltage according to a control signal; a smoothing circuit smoothing the power supply voltage supplied via the switching element and supplying the smoothed power supply voltage as an output voltage to an output terminal; an error amplifier outputting an error signal according to a difference between the output voltage supplied to the output terminal and a reference voltage; a delta sigma modulation circuit generating a delta sigma modulation signal according to the error signal; and a power supply abnormality detection circuit outputting the delta sigma modulation signal as the control signal and detecting an abnormality in the power supply voltage based on the delta sigma modulation signal. | 04-05-2012 |
| 20120080742 | Semiconductor device having vertical type transistor - A semiconductor device includes: a first vertical type transistor having a first lower diffusion layer, a first upper diffusion layer, and a gate electrode; a second vertical type transistor having a second lower diffusion layer, a second upper diffusion layer, and a second gate electrode; a gate wiring connected to the first and second gate electrodes; a first wiring connected to the first lower diffusion layer and second upper diffusion layer; and a second wiring connected to the first upper diffusion layer and second lower diffusion layer. | 04-05-2012 |
| 20120080734 | SEMICONDUCTOR MEMORY DEVICE - A semiconductor memory device includes a memory cell portion and a peripheral circuit portion. The memory cell portion includes a pillar capacitor with a lower electrode, a dielectric film, and an upper electrode sequentially formed on a side surface of a first insulating portion which is parallel to a predetermined direction, and a transistor electrically connected to the lower electrode. The peripheral circuit portion includes a plate electrode, a cylinder capacitor with an upper electrode, a dielectric film, and a lower electrode sequentially formed on a side surface of the plate electrode which is parallel to the predetermined direction, and a transistor electrically connected to the lower electrode. | 04-05-2012 |
| 20120077322 | SEMICONDUCTOR DEVICE, METHOD OF MANUFACTURING THE SAME AND ADSORPTION SITE BLOCKING ATOMIC LAYER DEPOSITION METHOD - To provide a dielectric film having good crystallinity while suppressing an influence of the size effects and preventing the dielectric film from being divided by an Al-doped layer although there is provided the Al-doped layer for improving the leakage characteristics in the dielectric film of a capacitor, the dielectric film has at least one Al-doped layer, and an area density of Al atoms in one layer of the Al-doped layer is smaller than 1.4E+14′ atoms/cm | 03-29-2012 |
| 20120075944 | Semiconductor device and manufacturing method thereof - A plurality of memory cells are tested in order. Each time a defective memory cell is detected by the test, error pattern information is updated based on a relative arrangement relationship between a plurality of defective memory cells, and error address information is updated based on the addresses of at least part of the plurality of defective memory cells. According to the present invention, it is possible to significantly reduce the storage capacity of the analysis memory. This allows the implementation of the analysis memory itself in the semiconductor device, in which case external testers need not include the analysis memory. | 03-29-2012 |
| 20120075904 | SEMICONDUCTOR DEVICE - A semiconductor device includes a memory cell, a bit line coupled to the memory cell, first and second wells arranged adjacently to each other, the first and second wells being different in conductivity type from each other and defining a boundary therebetween, first and second transistors formed in the first and second wells, respectively, and being different in channel type from each other, gate electrodes of the first and second transistors being connected in common to the bit line, and a third transistor formed in the first well such that the third transistor is sandwiched between the boundary and the first transistor, and a gate of the third transistor being supplied with a bit line precharge signal. | 03-29-2012 |
| 20120074477 | SEMICONDUCTOR DEVICE HAVING RAISED SOURCE AND DRAIN OF DIFFERING HEIGHTS - This semiconductor device has an MOS transistor equipped with a gate electrode formed on a semiconductor substrate, a source region next to one side of the gate electrode, and a drain region next to another side of the gate electrode, wherein an upper end of the source region and an upper end of the drain region are at positions where are higher than a top surface of the semiconductor substrate, and the height of the upper end of the drain region differs from the height of the upper end of the source region. | 03-29-2012 |
| 20120071001 | VAPORIZING AND FEED APPARATUS AND VAPORIZING AND FEED METHOD - A vaporizing and feed apparatus for vaporizing and feeding a solid film-forming raw material comprises a supercritical fluid feeding part for producing and feeding a supercritical fluid, a supercritical fluid adjusting part for dissolving the solid film-forming raw material in the supercritical fluid by bringing the supercritical fluid fed from the supercritical fluid feeding part into contact with the solid film-forming raw material, and a vaporizing part for phase-transitioning the supercritical fluid having the dissolved solid film-forming raw material to a gas, the solid film-forming raw material thereby being deposited in the gas, and for vaporizing the deposited solid film-forming raw material. | 03-22-2012 |
| 20120070978 | SEMICONDUCTOR DEVICE MANUFACTURING METHOD - A miniaturized semiconductor device is provided by reducing the design thickness of a wiring line protecting film covering the surface of a wiring layer, and reducing the distance between the wiring layer and via plugs formed by a self-aligning process. Dummy mask layers extending in the same layout pattern as the wiring layer is formed above the wiring layer covered with a protecting film composed of a cap layer and side wall layers. In the self-aligning process for forming via plugs in a self-aligned manner with the wiring layer and its protecting film, the thickness of the cap layer is reduced and the design interval between the via plugs is reduced, whereby the miniaturization of the semiconductor device is achieved. | 03-22-2012 |
| 20120070918 | METHOD OF MANUFACTURING SEMICONDUCTOR DEVICE - A method of manufacturing a semiconductor device may include, but is not limited to the following processes. First and second grooves are formed in a semiconductor substrate having a first surface. The first and second grooves have substantially the same vertical dimension. The first surface has first and second regions surrounded by the first and second grooves, respectively. An actual resistance value of the semiconductor substrate between a first point on the first region and a second point on the second region is measured. The vertical dimension of the first and second grooves is calculated with reference to the actual resistance value. | 03-22-2012 |
| 20120069687 | Semiconductor memory device and read wait time adjustment method thereof, memory system, and semiconductor device - A controller includes a set of first terminals to be coupled to a device that is under control of the controller, and a control circuit configured to generate and output onto the set of first terminals synchronous mode information including a selected one of selection and non-selection modes, the selection mode causing the device to return to the controller a first data signal while activating a first data strobe signal that is synchronous in phase with a system clock, the non-selection mode causing the device to return to the controller a second data signal while activating a second data strobe signal that is asynchronous in phase with the system clock signal, and edge specifying information including a selected one of first and second states, the first state causing the device to activate the first data strobe signal at a first timing. | 03-22-2012 |
| 20120069685 | Semiconductor device having optical fuse and electrical fuse - A semiconductor device includes a plurality of first chips, a second chip that controls the first chips, and internal wiring that connects the first chips and the second chip. The first chips each include: an optical fuse; a first latch circuit that retains information on the optical fuse; a second latch circuit that retains information on an electrical fuse, the information being supplied from the second chip through the internal wiring; and a select circuit that selects the information retained in either one of the first and second latch circuits. A redundancy determination signal is generated from the information selected. The information on the electrical fuse is transferred from the second chip to the first chips through the internal wiring. | 03-22-2012 |
| 20120064690 | METHOD FOR MANUFACTURING SEMICONDUCTOR DEVICE - A method for manufacturing a semiconductor device includes at least forming a lower electrode made of titanium nitride on a semiconductor substrate, forming a dielectric film comprising zirconium oxide, in which at least the uppermost layer of the dielectric film is formed by an atomic layer deposition (ALD) method on the lower electrode, forming a first protective film on the dielectric film without exceeding the film forming temperature of the ALD method over 70° C., and forming an upper electrode made of a titanium nitride on the first protective film. | 03-15-2012 |
| 20120064689 | METHOD FOR MANUFACTURING SEMICONDUCTOR DEVICE - A method for manufacturing a semiconductor device includes at least forming a lower electrode comprising titanium nitride on a semiconductor substrate, forming a dielectric film comprising zirconium oxide as a primary constituent on the lower electrode, forming a first protective film comprising a titanium compound on the dielectric film, and forming an upper electrode comprising titanium nitride on the first protective film. The method can include a step of forming a second protective film on the lower electrode before the step of forming the dielectric film on the lower electrode. | 03-15-2012 |
| 20120063241 | Semiconductor device and control method thereof - A semiconductor device has a hierarchical bit line structure and comprises first and second local bit lines transmitting first and second signals of first and second memory cells corresponding to a selected word line, and first and second global bit lines electrically connected to the first and second local bit lines through first and second switches, first and second sense amplifiers connected to the first and second global bit lines, and a control circuit. During a first period after the first and second memory cells are simultaneously accessed, the control circuit controls the first switch to conduction state so that the first sense amplifier amplifies the first signal and controls the second switch to non conduction state. During a second period after sensing of the first sense amplifier finishes, the control circuit controls the second switch to conduction state so that the second sense amplifier amplifies the second signal. | 03-15-2012 |
| 20120061827 | SEMICONDUCTOR DEVICE - A semiconductor device includes a semiconductor substrate having a first surface, a through silicon via (TSV) that is formed so that at least a part thereof penetrates through the semiconductor substrate, and an insulation ring. The insulation ring is formed so as to penetrate through the semiconductor substrate and so as to surround the TSV. The insulation ring includes a tapered portion and a vertical portion. The tapered portion has a sectional area which is gradually decreased from the first surface toward a thickness direction of the semiconductor substrate. The vertical portion has a constant sectional area smaller than the tapered portion. | 03-15-2012 |
| 20120061826 | SEMICONDUCTOR DEVICE - A device includes a substrate, a semiconductor chip, first and second pads, and a first wiring layer. The substrate includes first and second surfaces. The semiconductor chip includes third and fourth surfaces. The third surface faces toward the first surface. The first and second pads are provided on the third surface. The first and second pads are connected to each other. The first wiring layer is provided on the second surface of the substrate. The first wiring layer is connected to the first pad. | 03-15-2012 |
| 20120061800 | CAPACITOR ELEMENT, MANUFACTURING METHOD THEREOF AND SEMICONDUCTOR DEVICE - A semiconductor device includes a first capacitive insulating film, a first electrode, and a first barrier film. The first electrode has a first surface containing nitrogen. The first barrier film is between the first capacitive insulating film and the first electrode. The first barrier film faces the first surface of the first electrode. The first barrier film includes zinc oxide. The first barrier film is conductive. | 03-15-2012 |
| 20120058637 | SEMICONDUCTOR DEVICE MANUFACTURING METHOD - A method of manufacturing a semiconductor device, includes: forming a first and second interconnect trenches adjacent to each other in an interlayer insulating film; providing a first interconnect and a space thereon within the first interconnect trench, and a second interconnect and a space thereon within the second interconnect trench; forming a first trench larger in width from the first interconnect trench and a second trench larger in width from the second interconnect trench, by conducting isotropic-etching; and forming a first insulating film within the first trench and a second insulating film within the second trench by filling an insulating material in the first trench and the second trench. | 03-08-2012 |
| 20120058605 | METHOD FOR MANUFACTURING SEMICONDUCTOR DEVICE - When forming a conductive film by a method comprising sputtering after grinding the back surface of a semiconductor substrate, in order to avoid discharge from a part of an adhesive flown out at the outer periphery of the substrate, wherein the adhesive is used to fix the substrate to a support during grinding, at least the substrate end or the adhesive is removed after grinding the semiconductor substrate and before forming the conductive film, so that a gap between the substrate end and the adhesive may have a predetermined size. | 03-08-2012 |
| 20120058421 | PHASE SHIFT MASK AND METHOD FOR MANUFACTURING THE SAME, AND METHOD FOR MANUFACTURING INTEGRATED CIRCUIT - A phase shift mask is provided which includes: a substrate that is transparent to irradiation light, a shielding region formed on the substrate and in which a line pattern is formed, and a first transparent region and a second transparent region located on respective opposite sides of the shielding region on the substrate, wherein a phase shifter is formed under the first transparent region, and the phase shifter has a side wall including an outward protruding bent portion. The phase shifter can be formed by, for example, irradiating and scanning a predetermined region of the substrate with femtosecond pulse laser light applied from above the substrate. | 03-08-2012 |
| 20120056641 | Semiconductor device and method of adjusting characteristic thereof - To suppress the number of clocks needed to adjust the impedance of an output buffer. A pull-up replica buffer is connected between a calibration terminal and power supply wiring, and is controlled in impedance by a DRZQP signal supplied from a counter. A pull-down replica buffer is connected between ground wiring and a connection node A, and is controlled in impedance by a DRZQN signal supplied from the counter. More specifically, the DRZQP signal and the DRZQN signal indicate count values. The impedances of the replica buffers are increased or decreased stepwise in proportion to the count values. The count values are updated according to a binary search method. | 03-08-2012 |
| 20120056298 | Semiconductor Device - A semiconductor device includes a first power supply terminal, a second power supply terminal, and first and second capacitors. The first power supply terminal is configured to be supplied with a first electrical potential. The second power supply terminal is configured to be supplied with a second electrical potential. The second electrical potential is different from the first electrical potential. The first and second capacitors are coupled in series between the first and second power supply terminals. | 03-08-2012 |
| 20120056256 | SEMICONDUCTOR DEVICE AND METHOD FOR FORMING THE SAME - A semiconductor device includes a first semiconductor pillar, a second semiconductor pillar, and a first wiring. The first semiconductor pillar includes a first diffusion region. The second semiconductor pillar is adjacent to the first semiconductor pillar. The first wiring is positioned between the first and second semiconductor pillars. The first wiring has a first metal surface. The first metal surface has an ohmic contact with the first diffusion region. | 03-08-2012 |
| 20120056255 | Semiconductor device and method of fabricating the same - A semiconductor device includes a device formation region including a plurality of unit regions arranged in series to each other, each unit region comprising first and second active regions alternately arranged in series to each other. The first active region extends in a first direction. The second active region extends obliquely to the first direction. A plurality of first semiconductor pillars is arranged in the first direction and in each of the first active regions. A second semiconductor pillar is in each of the second active regions. A first bit line includes a first diffusion layer in the device formation region. The first diffusion layer extends under the plurality of first semiconductor pillars and the second semiconductor pillar. The first bit line connects the plurality of first semiconductor pillars and the second semiconductor pillar. A second bit line is electrically connected to the second semiconductor pillar. | 03-08-2012 |
| 20120056148 | Semiconductor device - A semiconductor device may include, but is not limited to: a first insulating film; a second insulating film over the first insulating film; a first memory structure between the first and second insulating films; and a third insulating film between the first and second insulating films. The first memory structure may include, but is not limited to: a heater electrode; and a phase-change memory element between the heater electrode and the second insulating film. The phase-change memory element contacts the heater electrode. The third insulating film covers at least a side surface of the phase-change memory element. Empty space is positioned adjacent to at least one of the heater electrode and the third insulating film. | 03-08-2012 |
| 20120044776 | SEMICONDUCTOR DEVICE AND CONTROL METHOD THEREOF - A semiconductor device comprises: a control signal generating circuit that generates and outputs a control signal that is in an active state during a period around at least one of rising edges and falling edges of a clock signal; and a data input circuit that is controlled to be in an active state, in which a data signal can be received, while the control signal is in an active state, and otherwise controlled to be in an inactive state. | 02-23-2012 |
| 20120042188 | SEMICONDUCTOR DEVICE AND POWER SUPPLY CONTROL METHOD OF THE SEMICONDUCTOR DEVICE - A semiconductor device includes an internal circuit, a power supply control circuit which controls supply of a power supply to the internal circuit upon receipt of a first control signal, and a control signal generation circuit which outputs the first control signal upon receipt of a second control signal. The control signal generation circuit does not deactivate the first control signal when an inactive period of the second control signal is equal to or less than a first period and deactivates the first control signal when the inactive period of the second control signal is more than the first period. | 02-16-2012 |
| 20120039144 | Semiconductor device with shortened data read time - A semiconductor device includes: a plurality of memory cell arrays arranged along a predetermined direction; a plurality of bit lines to read data stored in a plurality of memory elements; a plurality of sense amplifier sections that amplify potentials appearing on selected bit lines, that amplify potentials in opposite phase to the potentials, and that output data signals and inverted data signals; a data output circuit that outputs the data to an external circuit based on the data signals and the inverted data signals; and a plurality of local signal lines extending parallel to the predetermined direction, to transmit the data signal and the inverted data signals to the data output circuit, wherein the local signal lines include two adjacent signal lines which are positionally switched around in a direction perpendicular to the predetermined direction alternately at predetermined intervals. | 02-16-2012 |
| 20120039133 | SEMICONDUCTOR DEVICE PERFORMING REFRESH OPERATION - To provide a semiconductor device including a temperature detection circuit that detects a temperature of the semiconductor device and outputs temperature information, a counter circuit that takes a count of repeated inputs of a refresh command and outputs count information, a comparison circuit that activates a match signal when the temperature information matches the count information, and a refresh control circuit that controls whether to perform a refresh operation according to activation of the refresh command based on the match signal. According to the present invention, a refresh cycle can be finely adjusted because the repeated inputs of the refresh command are thinned out based on the temperature information. With this configuration, power consumption caused by the refresh operation can be reduced. | 02-16-2012 |
| 20120038406 | DELAY CIRCUIT - To cancel a delay time that occurs in a delay circuit due to temperature and voltage changes. The delay circuit includes a plurality of first and second inverters that are each composed of an N-channel first transistor and a P-channel second transistor connected in series, and P-channel third transistors that are connected between a first power supply wiring and the input nodes of the second inverters. According to the present invention, the presence of the third transistors cancels characteristic variations of the second transistors included in the respective plurality of inverters even if there are changes in temperature, voltage, etc. Consequently, when temperature, voltage, or the like changes, variations in the amount of delay of the entire delay circuit can be regarded as resulting from characteristic variations of the first transistors. | 02-16-2012 |
| 20120037953 | SEMICONDUCTOR DEVICE - A semiconductor device comprises a vertical MOS transistor including a semiconductor substrate having a silicon pillar, a gate electrode formed along a sidewall of the silicon pillar, a gate insulating film formed between the gate electrode and the silicon pillar, an upper diffusion layer formed on the top of the silicon pillar, and a lower diffusion layer formed lower than the upper diffusion layer in the semiconductor substrate; and a pad electrically connected to the lower diffusion layer. Breakdown occurs between the lower diffusion layer and the semiconductor substrate when a surge voltage is applied. | 02-16-2012 |
| 20120033521 | Semiconductor apparatus and its control method - Semiconductor apparatus includes first power supply line and second power supply line, first sub power supply line, first switch circuit, first logic circuit and first control circuit. First switch circuit is disposed between first power supply line and first sub power supply line, and controlled based on first signal. First logic circuit is disposed between first sub power supply line and second power supply line and comprises first input node and second input node receiving second signal and third signal respectively, and output node. First logic circuit outputs an active voltage associated with a logical level of second signal to output node in active state, and outputs a standby voltage associated with a voltage of second power supply line to output node regardless of the logical level of second signal in non-active state. First control circuit generates third signal based on first signal and fourth signal independent of first signal, and letting first logic circuit transit from non-active state to active state by providing third signal to second input node of first logic circuit. | 02-09-2012 |
| 20120032353 | SEMICONDUCTOR DEVICE - A semiconductor device includes a wiring board having connection pads thereon and a semiconductor chip mounted on the wiring board. The wiring board and the semiconductor chip are covered with a sealing portion. Conductive members are extended upward from the connection pads and are exposed from the sealing portion. Rewiring lines are connected to the exposed conductive members. Land portions are arranged on the sealing portion and are electrically connected to the conductive members through the rewiring lines. | 02-09-2012 |
| 20120032277 | SEMICONDUCTOR DEVICE - A semiconductor device includes a MOS transistor. The MOS transistor includes a pair of first, second, and third impurity diffusion regions. The second impurity diffusion regions have a first conductive type and are provided in a semiconductor substrate in opposite sides of the first impurity diffusion region. The impurities concentration of the first conductive type in the second impurity diffusion regions is higher than the impurities concentration of the first conductive type in the first impurity diffusion regions. The third impurity diffusion regions have a second conductive type and are provided in the semiconductor substrate such that it contacts not the second impurity diffusion regions, but the first impurity diffusion regions. | 02-09-2012 |
| 20120032256 | SEMICONDUCTOR DEVICE AND METHOD OF FORMING THE SAME - A semiconductor device includes a first island and a first electrode. The first island includes a first semiconductor region, a first insulation region, and a first insulating film. The first semiconductor region has first and second side surfaces adjacent to the first insulation region and the first insulating film, respectively. The first electrode is adjacent to the first insulation region and the first insulating film. The first insulating film is between the first electrode and the first semiconductor region. | 02-09-2012 |
| 20120026815 | Semiconductor device and method of testing the same - A semiconductor device may include, but is not limited to, first and second memory regions, and first to fifth control circuits. The first and second memory regions are mutually exclusive at the same time. The first control circuit performs a first access to the first memory region. The second control circuit performs a second access to the second memory region. The third control circuit controls activation and deactivation of the first and second control circuits based on a first logic received from a plurality of first external terminals. The fourth control circuit switches between the first and second accesses based on at least a second logic received from a second external terminal. The fifth control circuit controls validation and invalidation of the fourth control circuit. | 02-02-2012 |
| 20120026813 | Semiconductor device changing an active time-out time interval - A device includes a plurality of memory areas each including a plurality of memory cells required to perform refresh of information stored therein by a plurality of sense amplifiers, a first control circuit determining, in connection with one refresh requirement signal at a time, a number of refresh-target memory areas to produce a determined number, a second control circuit controlling, in accordance with the one refresh requirement signal at a time, refresh operation with respect to the refresh-target memory areas, and a third control circuit adjusting, in connection with the refresh operation, an active time-out time interval according to the determined number. The active time-out time interval indicates a time interval from a first time instant when the sense amplifiers are activated to a second time instant when word lines related to the refresh-target memory areas are inactivated. | 02-02-2012 |
| 20120026772 | MEMORY MODULE AND LAYOUT METHOD THEREFOR - The present invention provides a novel wiring method for LR-DIMM of VLP type that conforms to LR-DIMM technology. The LR-DIMM comprises a plurality of DRAMs mounted on a board, two connectors mounted on the board for receiving data, and a buffer device mounted on the board for redriving data applied to the two connectors to supply the data to the plurality of DRAMs. The buffer device is located near the center of the board on which the two connectors are arranged at both ends thereof, and supplies data from each connector to DRAMs arranged on the opposite side to the connector. | 02-02-2012 |
| 20120025324 | SEMICONDUCTOR DEVICE AND METHOD OF FORMING THE SAME AS WELL AS DATA PROCESSING SYSTEM INCLUDING THE SEMICONDUCTOR DEVICE - A semiconductor device includes low voltage and high voltage transistors over a substrate. The low voltage transistor is configured by at least one unit transistor. The high voltage transistor is configured by a greater number of the unit transistors than the at least one unit transistor that configures the low voltage transistor. Each of the unit transistors may include a vertically extending portion of semiconductor providing a channel region and having a uniform height, a gate insulating film extending along a side surface of the vertically extending portion of semiconductor, a gate electrode separated by the gate insulating film from the vertically extending portion of semiconductor, and upper and lower diffusion regions being respectively disposed near the top and bottom of the vertically extending portion of semiconductor. The greater number of the unit transistors are connected in series to each other and have gate electrodes eclectically connected to each other. | 02-02-2012 |
| 20120025286 | SEMICONDUCTOR DEVICE AND METHOD OF MANUFACTURING THE SEMICONDUCTOR DEVICE - A method of manufacturing a semiconductor device includes forming silicon pillar | 02-02-2012 |
| 20120020149 | Semiconductor device - A memory cell changes a potential of a bit line to a discharge potential from a precharge potential in correspondence with held data. A sense amplifier precharges a bit line by a precharge circuit, compares potential at a decision point linked with the potential of the bit line with a decision threshold and outputs a comparison result by an output circuit, and sets the potential at the decision point at a time of precharging in correspondence with the decision threshold. A capacitor element connects between the bit line and an input end of the output circuit. A potential setting circuit enables setting of an input end of the output circuit forming a decision point, to a prescribed potential between a precharge voltage of the bit line and the decision threshold at a time of precharging the bit line. Operating range of memory function is enlarged. | 01-26-2012 |
| 20120020144 | SEMICONDUCTOR DEVICE HAVING FLOATING BODY TYPE TRANSISTOR - A semiconductor device is disclosed in which a signal line and a drive circuit driving the signal line in response to a signal to be transmitted are provided. A transistor of a floating body type is further provided that includes a gate, a source, a drain, and a body between the source and drain which is brought into an electrically floating state. The gate is connected to the signal line, and at least one of the source and drain is connected to a control node that is supplied with a control signal. The control signal is configured to receive a control signal that changes from the first level to a second level during the period of time when the drive circuit is driving the signal node. | 01-26-2012 |
| 20120020041 | DEVICE AND MANUFACTURING METHOD OF THE SAME - A device includes a wiring board, an element mounted on the wiring board, a spacer member intervening between the wiring board and the element to form a space therebetween, and an encapsulation body filling the space and encapsulating the element on the wiring board. | 01-26-2012 |
| 20120018841 | SEMICONDUCTOR DEVICE - A semiconductor device comprises an active region formed in a semiconductor substrate and a gate electrode formed on the active region via a gate insulating film formed on a surface of the active region. A peripheral portion of the gate electrode and a peripheral portion of the active region overlap each other at a position where the active region is not divided by the gate electrode when viewed in plan view, thus forming an overlap region. | 01-26-2012 |
| 20120014199 | Semiconductor device that performs refresh operation - To include a refresh control circuit that generates a refresh execution signal in response to a refresh command supplied from outside, and a refresh address counter that performs a counting operation in response to activation of the refresh execution signal. The refresh control circuit generates the refresh execution signal 2 | 01-19-2012 |
| 20120014197 | SEMICONDUCTOR DEVICE AND TEST METHOD THEREOF - A semiconductor device includes a plurality of memory mats, each of which includes a plurality of word lines, a plurality of bit lines, a plurality of memory cells that are arranged at intersections of the word lines and the bit lines, and a plurality of dummy word lines, each of which is sandwiched between two corresponding ones of the word lines; a main dummy word line to which the dummy word lines included in the memory mats are commonly electrically connected; and a dummy-word-line control circuit that detects an electric potential of the main dummy word line when a test signal is activated, and outputs an error signal when the electric potential exceeds a predetermined threshold value. According to the present invention, because an electric potential of each of the dummy word lines is directly detected, an address of the word line, which has a short circuit with the dummy word line, can be reliably detected in a short time. | 01-19-2012 |
| 20120012927 | SEMICONDUCTOR DEVICE AND METHOD OF MANUFACTURING THE SAME - A semiconductor device includes: a cell gate trench with a bottom face and first/second side faces; a field-shield gate trench narrower than the cell gate trench; a first upper diffusion layer between the cell gate trench and the field-shield gate trench; a second upper diffusion layer on the opposite side of the cell gate trench from the first upper diffusion layer; a third upper diffusion layer on the opposite side of the field-shield gate trench from the first upper diffusion layer; a lower diffusion layer on the bottom face of the cell gate trench; first and second storage elements electrically connected to the first and second upper diffusion layers, respectively; a bit line electrically connected to the lower diffusion layer; a word line covering first and second side faces via a gate insulating film; and a field-shield gate electrode in the field-shield gate trench via a gate insulating film. | 01-19-2012 |
| 20120012910 | SEMICONDUCTOR DEVICE AND METHOD OF MANUFACTURING THE SAME - To prevent two contacts that have different heights, share at least one interlayer insulating film and are disposed close to each other from being short-circuited to each other due to misalignment thereof, a semiconductor device according to the invention has a recess in an interlayer insulating film in which a first contact having a lower height, the recess being formed by the upper surface of the first contact, and a silicon nitride sidewall is formed in the recess to extend from the upper surface of the first contact and along the side surface of the recess. | 01-19-2012 |
| 20120008437 | COUNTER CIRCUIT, LATENCY COUNTER, SEMICONDUCTOR MEMORY DEVICE INCLUDING THE SAME, AND DATA PROCESSING SYSTEM - To provide a counter circuit capable of accurately counting a high-frequency signal in which hazard or the like is easily generated. There are provided: a frequency dividing circuit that generates first and second frequency dividing clocks, which differ in phase to each other, based on a clock signal; a first counter that counts the first frequency dividing clock; a second counter that synchronizes with the second frequency dividing clock to fetch a count value of the first counter; and a selection circuit that exclusively selects count values of the first and second counters. According to the present invention, a relation of the count values between the first and second counters is kept always constant, and thus, even when hazard occurs, the count values are only made to jump and the count values do not fluctuate. | 01-12-2012 |
| 20120008368 | Semiconductor device having single-ended sensing amplifier - A semiconductor device includes a bit line, a memory cell coupled to the bit line, the memory cell being configured such that a current flowing there the memory cell is varied in accordance with information stored M the memory cell, a first transistor coupled at a control electrode thereof to the bit line, a second transistor coupled to the bit line and supplied at a control electrode thereof with a first control signal, a global bit line, and a third transistor coupled in series with the first sistor between a node and the global bit line, the third transistor supplied at a control electrode thereof with a second control signal. | 01-12-2012 |
| 20120002779 | STATE DETECTION CIRCUIT AND SEMICONDUCTOR MEMORY DEVICE - A state detection circuit comprises: a first counter circuit that counts a series of first command signals indicative of start of an operation control; a second counter circuit that counts a series of second command signals indicative of completion of the operation control; a count coincidence detection circuit that detects coincidence between a count in the first counter circuit and a count in the second counter circuit; and a state storing circuit that is set by the series of first command signals and reset when coincidence is detected by the count coincidence detection circuit. The first and second counter circuits each comprise a binary counter. | 01-05-2012 |
| 20120002464 | SEMICONDUCTOR DEVICE EQUIPPED WITH A PLURALITY OF MEMORY BANKS AND TEST METHOD OF THE SEMICONDUCTOR DEVICE - A write circuit writes a first data signal that is an input data signal that indicates a first logic level to each memory bank in sequence and writes a second data signal that is an input data signal that indicates a second logic level to each memory bank simultaneously. | 01-05-2012 |
| 20120001256 | SEMICONDUCTOR DEVICE - A semiconductor device includes: a first insulator pillar surrounding an active region; a second insulator pillar with a second side surface opposed in a y direction to a first side surface of the first insulator pillar on the active region side; an insulating film covering top surfaces of first and second insulator pillars; a second gate electrode electrically connected to the first gate electrode, covering at least the first and second side surfaces; and a gate contact plug in a contact hole and electrically connected to a top surface of the second gate electrode, the insulating film and the second gate electrode being exposed in a bottom of the contact hole. A distance between first and second side surfaces | 01-05-2012 |
| 20110318918 | METHOD OF FABRICATING SEMICONDUCTOR DEVICE ALLOWING SMOOTH BUMP SURFACE - A method of fabricating a semiconductor device, includes: removing, after forming solder for forming a plurality of bumps on a semiconductor substrate, an oxide film formed on a surface of the solder while heating the semiconductor substrate with first radiant heat; and heating the semiconductor substrate with an amount of second radiant heat that is greater than the amount of the first radiant heat by holding the semiconductor substrate at a position apart from a front surface of a heater stage at a predetermined distance to reflow the solder from which the oxide film is removed. | 12-29-2011 |
| 20110317503 | Semiconductor device - A semiconductor device is provided with: a delay circuit including a first delay unit that has a plurality of differential first delay elements which are respectively connected in series, a plurality pairs of first contacts which are respectively provided between the plurality of first delay elements, and a first output circuit that outputs a first delayed signal corresponding to a pair of first contacts selected from among the plurality pairs of first contacts, on receiving a first selection signal; a second delay unit that receives the first delayed signal, and that includes a plurality of single-ended second delay elements which are respectively connected in series, a plurality of second contacts which are respectively provided between the plurality of second delay elements, and a second output circuit that outputs a second delayed signal corresponding to a second contact selected from among the plurality of second contacts, on receiving a second selection signal; and a control circuit that outputs each of the first and second selection signals. | 12-29-2011 |
| 20110317495 | MEMORY SYSTEM AND CONTROL METHOD THEREFOR - A memory system includes a plurality of memory devices having data terminals that are commonly connected to a memory controller. Each of the memory devices includes a data output circuit that outputs read data that is read from a memory cell array in response to a read command to the data terminal, and an output-timing adjustment circuit that adjusts an output timing of read data that is output from the data output circuit. The memory controller sets an adjustment amount of adjustment performed by an output-timing adjustment circuit such that delay times from when the read command is issued until when the read data is received match in the memory devices, by issuing a setting command to each of the memory devices. | 12-29-2011 |
| 20110317372 | SEMICONDUCTOR DEVICE - A device includes: a wiring board having first and second surfaces opposing each other; and a plurality of memory packages on the first surface. The wiring board includes: a first set of terminals on the first surface; a plurality of second sets of terminals on the first surface; and a plurality of first signal lines. The terminals of the first set receive respective ones of a plurality of first signals supplied from a control device. Each of the second sets is provided for a corresponding one of the memory packages. The terminals of each of the second sets contact the corresponding one of the memory packages. The first signal lines extend from respective ones of the terminals of the first set while coupling respective ones of the terminals of each of the second sets. The first signal lines extend on the first surface without extending in the wiring board. | 12-29-2011 |
| 20110317356 | MEMORY SYSTEM, MEMORY MODULE, AND MODULE SOCKET - The present invention is adapted to a memory system that includes: a motherboard and a module board, wherein: the motherboard comprises a module socket mounted on the motherboard; and a plurality of pins two-dimensionally arranged on the module socket, and vertically erected with respect to the motherboard: and the module board comprises a plurality of device chips installed on the module board; and a contact portion mounted on the module board, and including a plurality of through holes two-dimensionally arranged thereon, the contact portion being electrically connected to the device chips: wherein each of the pins is inserted into each of the through holes to connect electrically to the contact portion. | 12-29-2011 |
| 20110315945 | Method of manufacturing semiconductor memory device - A semiconductor device includes a semiconductor substrate, a non-volatile semiconductor memory element formed over the semiconductor substrate, including a variable resistance element including a laminate comprising a first electrode, a variable resistance layer, and a second electrode, and a volatile semiconductor memory element formed over the semiconductor substrate, including a capacitance element including a laminate comprising a third electrode, a dielectric layer including a same material as the variable resistance layer, and a fourth electrode. | 12-29-2011 |
| 20110309511 | METHOD FOR PRODUCING LOW-k FILM, SEMICONDUCTOR DEVICE, AND METHOD FOR MANUFACTURING THE SAME - Hydrophobicity of a low dielectric constant film comprising a porous silica film is improved by applying a raw material for forming a porous silica film onto a substrate, and performing vapor-phase transport treatment to expose the substrate to an atmosphere of organic amine vapor to which no water is added. Simultaneously, reduction in a dielectric constant, reduction in leakage current, and improvement in mechanical strength are attained by controlling a pore diameter in a predetermined range. | 12-22-2011 |
| 20110305097 | Semiconductor device and data processing system - A semiconductor device comprises transmission lines, inverting circuits, first, second and third switches, global sense amplifiers, and a control circuit. The first switch switches between the transmission line and the input of the inverting circuit, the second switch switches between the transmission line and the output of the transmission line, and the third switch switches between the adjacent transmission lines. The control circuit turns off the first and second switches so that the transmission lines are brought into a floating state in a state where signals of the transmission lines are held in the inverting circuits by the global sense amplifiers. After charge sharing of the transmission lines occurs by turning on the third switches within a predetermined period, the control circuit turns off the second switches so that the transmission lines are inverted and driven via the inverting circuits and the second switches. | 12-15-2011 |
| 20110305057 | SEMICONDUCTOR MEMORY DEVICE, MEMORY CONTROLLER, AND DATA PROCESSING SYSTEM INCLUDING THESE - In one embodiment, a semiconductor memory device receives a refresh command and address information, and supplies a refresh control signal and the address information in common to core chips. Each of the core chips includes a layer-address comparison circuit that determines whether the address information assigns an own core chip, and a refresh control circuit that refreshes an own memory cell based on the refresh control signal when the address information assigns the own core chip. With this arrangement, a memory capacity of a chip that is refreshed by a refresh command for one time is reduced, and therefore a shortest issuing interval of a refresh command can be shortened. | 12-15-2011 |
| 20110304382 | Semiconductor device and data processing system - A semiconductor device comprises a first sense amplifier, first to third transmission lines, and first to third switches. The first and second transmission lines are connected to the first sense amplifier. The first and third switches control connections of the first to third transmission lines, and the second switch controls a connection between a fixed potential and third transmission line. When the second transmission line is not accessed, the first and third switches are brought into a non-conductive state and the second switch is brought into a conductive state, and the fixed potential is supplied to the third transmission line, thereby suppressing influence of the coupling noise between the transmission lines. | 12-15-2011 |
| 20110303988 | Semiconductor device and level shift circuit using the same - A level shift circuit includes: a pair of first and second P-channel transistors which are connected in a flip-flop manner and whose sources connected to a first power supply line; a pair of first and second N-channel transistors with the first N-channel transistor provided between the first P-channel transistor and a second power supply line and the second N-channel transistor provided between the second P-channel transistor and the second power supply line, in which input signals complementary to each other are inputted to their gates; and a current supply circuit provided between the first power supply line and a drain of the first N-channel transistor and between the first power supply line and a drain of the second N-channel transistor, respectively. The current supply circuit includes third and fourth N-channel transistors with their sources connected to drains of the first and second N-channel transistors and third and fourth P-channel transistors serving as current limiting elements with their one ends connected to the first power supply line and the other ends connected to drains of the third and fourth P-channel transistors. | 12-15-2011 |
| 20110299352 | Semiconductor device including memory cells that require refresh operation - A semiconductor device includes a first circuit that generates a self refresh signal in a predetermined cycle asynchronous with a cycle set externally, a second circuit that generates a refresh address in response to the self refresh signal and updates the refresh address and outputs the refresh address, a third circuit that retains a relief address, a fourth circuit that counts number of generation of the self refresh signal and activates an interrupt signal when a count of the number of generation reaches a predetermined count, a fifth circuit that specifies the refresh address when the interrupt signal is in an inactive state and specifies the relief address when the interrupt signal is in an active state, and a sixth circuit that performs a refresh operation on memory cells specified by the selected refresh address or the relief address. The second circuit temporarily stops updating the refresh address in response to activation of the interrupt signal. | 12-08-2011 |
| 20110298493 | VOLTAGE LEVEL SHIFT CIRCUIT AND SEMICONDUCTOR DEVICE - A voltage level shift circuit in which a difference in response characteristic depending on the signal level of an input signal is suppressed. The voltage level shift circuit generates an output signal VOUT having a voltage amplitude different from that of the input signal. An inverter INV | 12-08-2011 |
| 20110298290 | SEMICONDUCTOR DEVICE - In one embodiment, to maintain the operation stability of a semiconductor device even when an external voltage changes. An input signal discrimination unit operates with a power supply potential supplied from a first power supply line VDDI. The input signal discrimination unit compares an input signal VIN with a reference potential Vref. The comparison result is inverted into a signal V | 12-08-2011 |
| 20110294297 | Method of manufacturing semiconductor device - In a method of forming a dense contact-hole pattern in a semiconductor device, the method uses a self-align double patterning technique including forming a square or triangular lattice dot pattern on double layers of mask materials, forming first holes in the upper mask material and second holes wider than the first holes in the lower mask material by double patterning, additionally forming an insulating layer to a thickness such that the first holes are closed such that voids are left in the second holes, and transferring the shape of the voids to a base layer. The hole pattern formed thereby has a high precision, with a density thereof being double or triple that of a pattern formed by a lithography technique. | 12-01-2011 |
| 20110294276 | Method of manufacturing semiconductor device - SiOC film ( | 12-01-2011 |
| 20110294270 | METHOD OF MANUFACTURING SEMICONDUCTOR DEVICE - Extension regions | 12-01-2011 |
| 20110294235 | METHOD OF FORMING A SEMICONDUCTOR DEVICE - A method of forming a semiconductor device includes the following processes. A groove is formed in a semiconductor substrate. A first film is formed in a device-formation region and a non-device-formation region of a semiconductor substrate. The first film is patterned to form a second film in the device-formation region and a monitoring pattern in the non-device-formation region. First and second structures are formed over the second film and the monitoring pattern respectively. The first structure has substantially the same pattern defined in a horizontal direction as the second structure. The first and second structures are polished. | 12-01-2011 |
| 20110292752 | SEMICONDUCTOR MEMORY DEVICE HAVING FUSE ELEMENTS PROGRAMMED BY IRRADIATION WITH LASER BEAM - A relief-address control unit of a semiconductor memory device includes a fuse storage unit and a relief circuit. The fuse storage unit includes a plurality of fuse elements that are made nonconductive by irradiation with a laser beam, and a protective film with an opening directly above the fuse elements to facilitate the laser beam to pass through. The relief circuit specifies a relieved address based on a nonconductive state of the fuse elements. The opening is in a unified form along a long-side direction of the fuse storage unit. Further, the relief circuit is arranged adjacent to a short-side end of the fuse storage unit. | 12-01-2011 |
| 20110292717 | Semiconductor device - A semiconductor device may include, but is not limited to: a first memory cell; a first line; a second line; and a first capacitor. The first line is coupled to the first memory cell. The first line supplies a first voltage to the first memory cell. The second line is supplied with a fixed voltage. The first capacitor is coupled between the first and second lines. | 12-01-2011 |
| 20110292710 | SEMICONDUCTOR DEVICE AND CONTROL METHOD THEREFOR - A semiconductor device includes a first and a second ROMs; and a first control circuit having an input node and sets a first and a second addresses that are different each other to be respectively recorded in the first and second ROMs from a plurality of input addresses supplied sequentially into the input node, on the basis of a setting signal, the plurality of input addresses including the first and second addresses, wherein the first control circuit being configured to set an input address as the first address based on the setting signal, and the first control circuit further being configured to set an input address as the second address on the basis of the setting signal when the first and second addresses are different each other in a predetermined portion of bits after the first address is set to the first ROM. | 12-01-2011 |
| 20110292709 | SEMICONDUCTOR DEVICE - A semiconductor device includes a sense amplifier circuit. The sense amplifier circuit includes a cross-coupled first transistor and second transistor that perform amplification. The sources of the cross-coupled transistors are respectively connected in series with a third transistor and a fourth transistor, and electrical current supply capability of the third and fourth transistors is controlled by a control voltage given to control electrodes of the third and fourth transistors. In a data retaining period, a minimum sub-threshold current necessary for retaining the data is flowed to the third and fourth transistors according to the control voltage, and bit line potential is maintained. | 12-01-2011 |
| 20110291277 | SEMICONDUCTOR DEVICE AND METHOD OF FORMING SEMICONDUCTOR DEVICE - A semiconductor device includes a wiring, a stack of first, second, and third films, and a contact plug. The stack of first, second, and third films is located over the wiring. The first, second, and third films are stacked in this order. The stack has an opening. The first film is made of the same material as the third film. The contact plug is in the opening. The contact plug is in contact with the wiring. | 12-01-2011 |
| 20110291239 | SEMICONDUCTOR DEVICE - A semiconductor device includes: a first interlayer insulating film; a first conductive member provided lower than the first interlayer insulating film; a contact plug that penetrates through the first interlayer insulating film, and is electrically connected to the first conductive member, the contact plug including a small-diameter part, and a large-diameter part arranged on the small-diameter part, an outer diameter of the large-diameter part being larger than an outer diameter of the small-diameter part, and the outer diameter of the large-diameter part being larger than an outer diameter of a connection face between the second conductive member and the large-diameter part; and a second conductive member that is provided on the first interlayer insulating film, and is electrically connected to the contact plug. | 12-01-2011 |
| 20110291168 | SEMICONDUCTOR DEVICE HAVING ESD STRUCTURE - Semiconductor layers on active areas for transistors in a memory cell region (region A) and a peripheral circuit region (region B) are simultaneously epitaxially grown in the same thickness in which the adjacent semiconductor layers in region A do not come into contact with each other. Only semiconductor layer ( | 12-01-2011 |
| 20110286262 | Semiconductor memory device - A semiconductor memory device includes a plurality of word lines wired in a first direction, a plurality of bit lines wired in a direction crossing the first direction, a memory cell array including a plurality of DRAM cells provided corresponding to intersections between the word lines and the bit lines, a word line driver which drives the word lines, and a plurality of word line potential stabilization transistors connected to the respective word lines and disposed on an opposite side of the word line driver with the memory cell array sandwiched between the word line potential stabilization transistors and the word line driver, each word line potential stabilization transistor turning on when the word line adjacent to a relevant one of the word lines is selected, thereby connecting the relevant word line to a non-selected potential, and turning off when the relevant word line is selected. | 11-24-2011 |
| 20110284969 | SEMICONDUCTOR DEVICE, METHOD OF FORMING SEMICONDUCTOR DEVICE, AND DATA PROCESSING SYSTEM - A semiconductor device includes a semiconductor substrate including a fin. The fin includes first and second fin portions. The first fin portion extends substantially in a horizontal direction to a surface of the semiconductor substrate. The second fin portion extends substantially in a vertical direction to the surface of the semiconductor substrate. The fin has a channel region. | 11-24-2011 |
| 20110284941 | METHOD OF FABRICATING A SEMICONDUCTOR DEVICE - A semiconductor device includes: a transistor including source and drain diffusion-layers, a gate insulating film and a gate electrode; first and second plugs formed in a first interlayer-insulating film and connected to the source and drain diffusion-layers, respectively; a third plug extending through a second interlayer-insulating film and connected to the first plug; a first interconnection-wire formed on the second interlayer-insulating film and connected to the third plug; a second interconnection-wire formed on a third interlayer-insulating film and intersecting the first interconnection-wire; a fourth interlayer-insulating film; a hole extending through the fourth, third and second interlayer-insulating films, the hole being formed such that a side surface of the second interconnection-wire is exposed; and a fourth plug filling the hole via an intervening dielectric film and connected to the second plug, wherein a capacitor is formed using the fourth plug, the second interconnection-wire and the dielectric film sandwiched therebetween. | 11-24-2011 |
| 20110281411 | METHOD FOR MANUFACTURING SEMICONDUCTOR DEVICE - An amorphous silicon layer and a single crystal silicon layer are formed in an upper portion of a silicon pillar. Then, by performing the selective epitaxial growth method twice, an amorphous silicon layer and an amorphous silicon germanium layer are formed in this order on the silicon pillar. Subsequently, by heat treatment, a second impurity diffusion layer including a single crystal silicon layer is formed in the upper portion of the silicon pillar. At the same time of the formation of the second impurity diffusion layer, a first contact plug including a single crystal silicon layer and a polycrystalline silicon germanium layer is formed on the silicon pillar. Then, a second contact plug made of metal is formed so that it is connected to the first contact plug. | 11-17-2011 |
| 20110280090 | Semiconductor device and test method thereof - For example, to include plural data input/output terminals and a strobe terminal that are electrically connected in common by a test probe, a command address terminal that is connected to a test probe, and an output control circuit that performs a selecting operation of data output circuits based on a signal that is supplied to the command address terminal. According to the present invention, it is possible to perform a test that uses non-compressed actual data while allocating plural data input/output terminals to one determination circuit within a tester. With this configuration, it is possible to test a large number of semiconductor devices in parallel by using a limited number of determination circuits within the tester. | 11-17-2011 |
| 20110279798 | Method of exposing a semiconductor wafer and exposure apparatus - An exposure method includes the following processes. An autofocus scan process is performed to detect a defocused portion of a first resist film over a semiconductor wafer and to generate a detection signal that indicates the defocused portion detected. A first exposure scan process is performed while selectively blinding the first resist film, with reference to a detection signal related to the defocused portion detected. | 11-17-2011 |
| 20110279157 | DEVICE - A device in which a clock generation circuit is connected to a counter circuit for controlling operation timing of a DLL circuit or the like, and the counter circuit is intermittently operated by intermittently supplying a clock signal to the counter circuit from the clock generation circuit. | 11-17-2011 |
| 20110278654 | SEMICONDUCTOR DEVICE - A semiconductor device comprises an interlayer insulation film, a wiring embedded in the interlayer insulation film and an air gap part formed between a side surface of the wiring and the interlayer insulation film. | 11-17-2011 |
| 20110273948 | SEMICONDUCTOR DEVICE AND METHOD OF REFRESHING THE SAME - A semiconductor device according to the present invention has an address scrambling circuit for performing address scrambling operation of an address and a redundancy judging circuit for judging that redundancy judgment is performed about the address scrambled by the address scrambling circuit. This structure makes it possible to completely refresh operation concerned with normal word lines and redundancy word lines. | 11-10-2011 |
| 20110272760 | SEMICONDUCTOR DEVICE AND MANUFACTURING METHOD THEREOF - A semiconductor device includes, on a semiconductor substrate, an active region surrounded by an STI region, a gate trench formed in one direction transverse to the active region, a gate insulating film formed on a side surface of the gate trench, an insulating film formed on a bottom of the gate trench and thicker than the gate insulating film, and a gate electrode having at least a part of the gate electrode formed in the gate trench. Portions of the semiconductor substrate present in the active region and located on both sides of the gate trench in an extension direction of the gate trench function as a source region and a drain region, respectively. A portion of the semiconductor substrate located between the side surface of the active region (the side of the STI region) and the side surface of the gate trench functions as a channel region. | 11-10-2011 |
| 20110269308 | METHOD FOR MANUFACTURING SEMICONDUCTOR DEVICE - In a method for manufacturing a semiconductor device, a first Ti film, a titanium nitride (TiN) film, a second Ti film, a first aluminum (Al) film and a second Al film are formed sequentially in a contact hole formed in a second interlayer insulating film and on a Cu wire. The first titanium (Ti) film is formed so that a ratio of a thickness of a first portion of the first Ti film on a bottom face of the contact hole to a thickness of a second portion of the first Ti film on the second interlayer insulating film becomes equal to or smaller than 5/100. Moreover, the second Al film is formed using an aluminum reflow method, in which the second Ti film and the first Al film are alloyed with each other to form an Al—Ti alloy film. | 11-03-2011 |
| 20110267877 | SEMICONDUCTOR DEVICE - A semiconductor device includes first and second phase-change memory elements (GST | 11-03-2011 |
| 20110267105 | PARITY UNIT USING 3-INPUT NANDs - Disclosed herein is a logic circuit which responds to three signals to detect whether the number of signals taking one of logic-1 and logic-0 is odd or even, and includes five NAND gates. The first NAND gate is supplied with the first signal, the second signal and the third signal; the second NAND gate is supplied with the inverted first signal, the inverted second signal and the third signal; the third NAND gate is supplied with the first signal, the inverted second signal and the inverted third signal; and the fourth NAND gate is supplied with the inverted first signal, the second signal and the inverted third signal. The fifth NAND gate is supplied with outputs of first, second, third and fourth NAND gates and produces the output signal whose logic level is dependent on whether the number of the input signals taking one of logic-1 and logic-0 is odd or even. | 11-03-2011 |
| 20110267099 | Semiconductor device generating complementary output signals - To include a first inverter that receives an input signal to output an inverted signal, a second inverter that receives the inverted signal to output a first internal signal, and a third inverter that receives the input signal and outputs a second internal signal by using the inverted signal as a power supply. According to the present invention, because a signal on one signal path is used as a power supply of an inverter included in the other signal path, phases of a pair of output signals based on the input signal can be exactly matched without adding a capacitor or a resistor for adjustment. | 11-03-2011 |
| 20110266615 | SEMICONDUCTOR DEVICE - A semiconductor structure may include, but is not limited to: a semiconductor substrate; a first semiconductor structure extending upwardly over the semiconductor substrate; and a second semiconductor structure extending upwardly over the semiconductor substrate, the first and second semiconductor structures being aligned in a first < | 11-03-2011 |
| 20110263099 | Manufacturing method of semiconductor device having vertical transistor - A method of manufacturing a semiconductor device includes forming a gate electrode material that covers a gate insulating film formed on each of side surfaces of first and second silicon pillars, wherein a film formation amount of the gate electrode material is controlled so that a first part with which the side surface of the first silicon pillar is covered via the gate insulating film does not contact with a second part with which the side surface of the second silicon pillar is covered via the gate insulating film. The method further includes: forming a mask insulating film that covers the first and second parts and fills a region between the first and second parts; and etching the gate electrode material using the mask insulating film as a mask, thereby forming gate electrodes with which the side surfaces of the first and second silicon pillars are covered via the gate insulating film, respectively and a conductive film electrically connecting the gate electrodes to each other. | 10-27-2011 |
| 20110261640 | Semiconductor memory device and data processing system including the semiconductor memory device - A semiconductor device, includes a first memory cell array, a second memory cell array, a command decoder configured to produce a transfer command to transfer a data stored in a first area of the first memory cell array to a second area of the second memory cell array, when receiving a read command to the first memory cell array and sequentially a write command to the second cell memory array, a first address generator configured to produce a first internal address for designating the first area of the first memory cell array when receiving the transfer command from the command decoder; and a second address generator configured to produce a second internal address for designating the second area of the second memory cell array when receiving the transfer command from the command decoder. | 10-27-2011 |
| 20110261631 | SEMICONDUCTOR DEVICE AND DATA PROCESSING SYSTEM COMPRISING SEMICONDUCTOR DEVICE - A semiconductor device comprises a sense amplifier circuit amplifying a signal transmitted through the bit line, first/second data lines transmitting the signal amplified by the sense amplifier circuit, a read amplifier circuit driven by a first voltage and amplifying the signal; first/second switch circuits controlling connection between the above components, first/second voltage setting circuits setting the second/third data lines to a second voltage lower than the first voltage. A predetermined voltage obtained by adding the second voltage to a threshold voltage of a transistor in the second/third switch circuit is applied to the gate terminal thereof, and ends of the data lines are connected to the source and drain terminals thereof. | 10-27-2011 |
| 20110261630 | SEMICONDUCTOR DEVICE - A semiconductor device compares potential AF_G at an end of an anti-fuse element with potential VPPR. If potential AF_G is equal to or higher than potential VPPR, then the semiconductor device boosts potential VPPSVT of a power supply line that is connected to the end of the anti-fuse element. If the of the anti-fuse element and the other end thereof are connected to each other by the boosted potential, thereby making potential AF_G lower than potential VPPR, then the semiconductor device stops boosting potential VPPSVT. | 10-27-2011 |
| 20110261622 | NONVOLATILE SEMICONDUCTOR MEMORY DEVICE AND MEMORY SYSTEM HAVING THE SAME - A nonvolatile semiconductor memory device includes a first string including a first number of memory cells connected in series each storing therein information in a nonvolatile manner; and a second string including a second number of memory cells connected in series each storing therein information in a nonvolatile manner, wherein the second number is smaller than the first number. | 10-27-2011 |
| 20110261614 | Semiconductor device - A semiconductor device that needs a relatively long time to control a write operation and the like is reduced in size. The semiconductor device includes: first and second bit line control circuits which are arranged to correspond to first and second memory cell arrays, respectively; a control signal line that is connected to the first and second bit line control circuits in common and transmits a first control signal; and control signal lines that are connected to the first and second bit line control circuits, respectively, and transmit second and third control signals, respectively. The first bit line control circuit performs an operation control on the first memory cell array when the first and second control signals are activated. The second bit line control circuit performs an operation control on the second memory cell array when the first and third control signals are activated. | 10-27-2011 |
| 20110260337 | METHOD OF MANUFACTURING SEMICONDUCTOR DEVICE AND SEMICONDUCTOR DEVICE - A semiconductor chip | 10-27-2011 |
| 20110260288 | SEMICONDUCTOR DEVICE AND METHOD FOR MANUFACTURING THE SAME - Provided is a method for manufacturing a semiconductor device comprising: a process of forming a first trench | 10-27-2011 |
| 20110260239 | SEMICONDUCTOR DEVICE AND METHOD OF FABRICATING THE SAME - A semiconductor device includes a first capacitive insulating film, a semiconductor region, a gate insulating film, and a gate electrode. The semiconductor region has a groove. The gate insulating film covers a surface of the groove. The gate electrode is in the groove. The gate electrode includes first and second conductive films. The first conductive film is in contact with the gate insulating film. The first conductive film has an upper surface which is higher than a close portion of the second conductive film. The close portion is closer to the upper surface of the first conductive film. | 10-27-2011 |
| 20110256685 | METHOD OF MANUFACTURING SEMICONDUCTOR DEVICE - A film structure including at least one film is formed on a face of a semiconductor substrate and then a first mask with a pattern is formed on the film structure. A second mask is formed so as to cover the first mask over a bevel region. The film structure is etched using the first and second masks and thereafter the remaining first and second masks are removed away. | 10-20-2011 |
| 20110255358 | Semiconductor device having floating body type transistor - A semiconductor device comprises a floating body type transistor and first and second circuits. The transistor has a floating body and a source-drain path inserted between first and second circuit nodes. The first circuit supplies a first signal to the gate of the transistor, and the first signal changes between a first logic level that holds the transistor in a non-conductive state and a second logic level that directs the transistor into a conductive state. The second circuit supplies a first voltage level near the second logic level to the first circuit node and supplies a second voltage level near the second logic level to the second circuit node, each as a level in a state where the transistor is not utilized. Thereby the gate capacitance of the transistor can be kept small as viewed from the gate, and high-speed operation and a reduction in consumption current can be achieved. | 10-20-2011 |
| 20110254617 | SEMICONDUCTOR DEVICE - A semiconductor device includes a reduced-power-consumption circuit block which includes first and second power lines, and a first circuit cell. The first circuit cell includes a first functional-element-free region. The first functional-element-free region includes a first driver circuit configured to connect and disconnect the first power line and the second power line. | 10-20-2011 |
| 20110254066 | SEMICONDUCTOR DEVICE - A semiconductor device includes, a semiconductor substrate, a first transistor of a first conductivity type, a second transistor of a second conductivity type, a first capacitor, and a first wiring. The semiconductor substrate includes first, second, and third regions. The third region is sandwiched between the first and second regions. The first transistor of the first conductivity type is disposed in the first region. The second transistor of the second conductivity type is disposed in the second region. The first capacitor is disposed in the third region. The first wiring electrically couples one of main electrodes of the first transistor and one of main electrodes of the second transistor. The first wiring passes above the first capacitor. | 10-20-2011 |
| 20110250757 | METHOD OF MANUFACTURING SEMICONDUCTOR DEVICE - A coating film is formed on a member to be etched, which includes an amorphous carbon film and a silicon oxynitride film, by a spin coating method; a sidewall core is formed by pattering the coating film; a silicon oxide film is formed to cover at least the side surface of the sidewall core; and an organic anti-reflection film is formed on the silicon oxide film by a spin coating method. Thereafter, an embedded mask is formed to cover concave portions of the silicon oxide film by etching the organic anti-reflection film; exposed is a portion of the member to be etched which does not overlap the sidewall core or the embedded mask by etching the silicon oxide film; and the member to be etched is etched. Thus, it is possible to obtain a pattern with a size less than the photolithography resolution limit. | 10-13-2011 |
| 20110250707 | METHOD OF MANUFACTURING SEMICONDUCTOR DEVICE - A method of manufacturing a semiconductor device may include, but is not limited to the following processes. A first group identifier allocated to a first group of semiconductor wafers is detected. The first group of semiconductor wafers includes a first semiconductor wafer to be processed first among the first group. A first processor of a plurality of processors, which process respective ones of the first group of semiconductor wafers, are determined based on the first group identifier. The first processor is used for processing the first semiconductor wafer. The first semiconductor wafer is supplied to the first processor. | 10-13-2011 |
| 20110249521 | Semiconductor device - A semiconductor device includes: a clock generator generating a first internal clock signal based on an external clock signal; a clock divider generating second and third internal clock signals based on the first internal clock signal and including an edge adjustor adjusting a timing of one of rising and falling edges of the third internal clock signal, an adjustment information holder supplying an edge adjustment signal to the edge adjustor, and a data strobe generator receiving the second and third internal clock signals to generate a first data strobe signal based on the second internal clock signal, and a second data strobe signal with a phase different from that of the first data strobe signal, based on the third internal clock signal. The edge adjustor adjusts the timing of at least one of the rising and falling edges of the third internal clock signal based on the edge adjustment signal. | 10-13-2011 |
| 20110248756 | SEMICONDUCTOR CIRCUIT - Power consumption in a DLL circuit having a DCC circuit is reduced. Specifically, a semiconductor circuit includes a change-in-duty detection circuit, activation and deactivation of which is controlled based upon a control signal (DCCEN), for comparing duty of a clock signal that has been generated based upon an input clock signal and a preset duty and outputting result of the comparison; and a duty determination circuit for outputting the control signal (DCCEN) for deactivating the change-in-duty detection circuit when the output of the change-in-duty detection circuit indicates that duty of the generated clock signal is in the vicinity of a target value, which is a preset duty, and outputting the control signal (DCCEN) for activating the change-in-duty detection circuit when the duty of the generated clock signal is not in the vicinity of the target value. | 10-13-2011 |
| 20110248742 | Calibration circuit, semiconductor device including the same, and data processing system - A method includes issuing a calibration command and performing a calibration operation in response to the calibration command. The calibration operation includes adjusting an impedance of a first replica buffer with updating a first code, the first replica buffer being substantially identical in circuit configuration to one of pull-up and pull-down circuits included in an output buffer, adjusting impedance of a second replica buffer with updating a second code, the second replica buffer being substantially identical in circuit configuration to the other of the pull-up and pull-down circuits included in the output buffer, controlling a first latch circuit to hold the first code when the impedance of the first replica buffer reaches a first level, and controlling a second latch circuit to hold the second code when the impedance of the second replica buffer reaches a second level. | 10-13-2011 |
| 20110248697 | Semiconductor device and data processing system - A semiconductor device comprises a first circuit outputting a signal to a first signal line, a first FET applied with a driving signal and having a gate electrode connected to a first node, a second FET controlling an electrical connection between the first signal line and the first node, a third FET amplifying a signal of the first node, a second circuit precharging the first signal line, and a voltage control circuit. A gate capacitance of the first FET is controlled in response to a voltage difference between the first node and the driving signal. The voltage control circuit shifts a potential of the driving signal when the second FET is non-conductive after the signal of the first-circuit is transmitted to the first node, and performs an offset control for the driving signal so as to compensate a variation of a threshold voltage of the first FET. | 10-13-2011 |
| 20110244628 | METHOD OF MANUFACTURING SEMICONDUCTOR DEVICE - A method of manufacturing a semiconductor device includes: supplying a supercritical fluid mixed with an under-fill material to a stacked unit, which has a plurality of stacked semiconductor chips; and filling the under-fill material in the space between the plurality of the semiconductor chips, by heating the stacked unit placed in the inside of the high-pressure vessel and curing the under-fill material flowing in the space between the plurality of the semiconductor chips by a polymerization reaction, while the supercritical fluid is being supplied. | 10-06-2011 |
| 20110241177 | Semiconductor wafer including cracking stopper structure and method of forming the same - A semiconductor includes a semiconductor substrate having a main face, the semiconductor device having a device region and a dicing line and a stack of insulating layers over the semiconductor substrate. There is a multi-level interconnection structure in the stack of insulating layers. A passivation film covers the semiconductor substrate, the passivation film having an opening. The stack of insulating layers has a groove which extends from the opening and penetrates at least one of the insulating layers, the groove is positioned between the device region and the dicing line, and the groove is narrower in width than the opening. | 10-06-2011 |
| 20110237069 | METHOD OF MANUFACTURING SEMICONDUCTOR DEVICE - A method of manufacturing a semiconductor device may include, but is not limited to the following processes. A first hole is formed in an insulating film. A seed layer, which covers an upper surface of the insulating film and an inner surface of the first hole, is formed. A first plating film is formed over the seed layer at a first growth rate. A second plating film is formed over the first plating film at a second growth rate that is higher than the first growth rate. A third plating film is formed over the second plating film at a third growth rate that is higher than the second growth rate. | 09-29-2011 |
| 20110234249 | TEST METHOD AND INTERPOSER USED THEREFOR - An interposer to be mounted with an integrated circuit to be a test object is provided with a switch and a probe to detect an electric current corresponding to individual terminals of the integrated circuit. A test pattern signal is then inputted to the integrated circuit through a test substrate as a switch that is connected to a power supply terminal of the integrated circuit and that is turned off. If the integrated circuit normally operates and the current values of all the terminals of the integrated circuit are within a tolerance, the power supply terminal connected to the turned-off switch is identified as a terminal that may be removed. | 09-29-2011 |
| 20110233723 | DIELECTRIC FILM AND SEMICONDUCTOR DEVICE - Disclosed is a dielectric film having a high dielectric constant and an excellent leakage breakdown. The dielectric film includes a TiO | 09-29-2011 |
| 20110233662 | SEMICONDUCTOR DEVICE - A semiconductor device may include, but is not limited to: a semiconductor substrate; a bit line; and a contact portion. The semiconductor substrate has a first groove having at least first and second side surfaces facing each other. The bit line is positioned in the first groove. The bit line is insulated from the semiconductor substrate. The contact portion is positioned in the first groove. The contact portion is electrically connected to the bit line. The contact portion contacts the first side surface of the first groove. The contact portion is insulated from the second side surface of the first groove. | 09-29-2011 |
| 20110233625 | SEMICONDUCTOR DEVICE AND METHOD FOR MANUFACTURING THE SAME - A semiconductor device includes a semiconductor chip; and a scribe line disposed in an adjacent way to and around the semiconductor chip. The scribe line comprises an interlayer insulating film and an accessory. The accessory comprises a first portion with a layer shape formed on the interlayer insulating film and a second portion extending downward from the first portion into the interlayer insulating film in a thickness direction thereof. | 09-29-2011 |
| 20110228618 | SYSTEM WITH CONTROLLER AND MEMORY - According to the system of the present invention, data (DQ) signals are outputted/received between a controller | 09-22-2011 |
| 20110227619 | Clock generation circuit, semiconductor device including the same, and method of generating clock signal - To provide a DLL circuit incorporating a duty adjustment circuit that is independent of the frequency of a clock signal. The DLL circuit includes: a delay line that delays a first internal clock signal to generate a second internal clock signal; a counter circuit that specifies an amount of delay of the delay line; a counter control circuit that adjusts a count value of the counter circuit; and a subtraction circuit that determines a difference between first and second count values at which the rise edge of the first internal clock signal coincides with that of a replica clock signal. The fall edge of the second internal clock signal is adjusted based on a value equivalent to one-half of the difference obtained. This prevents the applicable frequency range from being limited as with a type of duty adjustment circuit that alternately discharges capacitors. | 09-22-2011 |
| 20110227618 | INTERNAL-CLOCK ADJUSTING CIRCUIT - A delay circuit generates an internal clock signal or a second clock signal by delaying an external clock signal. A detection-potential generation circuit included in a phase-difference determination circuit generates a detection potential corresponding to a difference between a timing of an active edge of an internal clock signal or a third clock signal and a timing of the target external clock signal in a first node. A reference-potential generation circuit included in the phase-difference determination circuit generates a reference potential in a second node. A phase control circuit delays the second clock signal according to the detection potential. At this time, when the detection potential is higher than the reference potential, an adjustment amount of the second clock signal per adjustment changes. | 09-22-2011 |
| 20110225355 | SEMICONDUCTOR DEVICE, REFRESH CONTROL METHOD THEREOF AND COMPUTER SYSTEM - A semiconductor device comprises a first memory cell array, a register storing information of whether or not one of the word lines in an active state exists in a unit area and storing address information, and a control circuit controlling a refresh operation for a refresh word line based on the information in the register when receiving a refresh request. When the one of the word lines in an active state does not exist, memory cells connected to the refresh word line are refreshed. When the one of the word lines in an active state exists, the one of the word lines in an active state is set into an inactive state temporarily and the memory cells connected to the refresh word line are refreshed after precharging bit lines of the memory cells. | 09-15-2011 |
| 20110222362 | SEMICONDUCTOR MEMORY DEVICE - A semiconductor memory device includes a row control circuit block and a column control circuit block each performing an access control over a memory cell array, a data I/O circuit block transmitting and receiving data to and from the memory cell array, and a control circuit changing at least a part of the row control circuit block, the column control circuit block, and the data I/O circuit block from a standby state into an active state in response to a setting of a predetermined mode signal to a mode register. According to the present invention, even if it is necessary to turn predetermined circuit blocks into the active state by an operation other than a read or write operation, there is no need to always set these circuit blocks into the active state. | 09-15-2011 |
| 20110222329 | Semiconductor device having its standby current reduced - A semiconductor device includes a plurality of drain lines each being commonly connected to first nodes of a plurality of memory cells, a plurality of bit lines respectively connected to second nodes of the memory cells, a source line, a transistor that connects the drain lines to the source line, and a transistor that connects the source line to a ground potential in response to an access to the memory cell. Under control in which the memory cells are all deactivated, the semiconductor device controls the drain line to a drain potential that is higher than the ground potential, and controls the source line to be in a floating state by deactivating the transistors. | 09-15-2011 |
| 20110221513 | Semiconductor device having boosting circuit - A semiconductor device includes a boosting circuit that boosts an internal power supply voltage in a boosting range according to an external power supply voltage, an external voltage-level comparison circuit that compares the external power supply voltage and a predetermined reference voltage, and a variable resistor circuit that includes a variable resistor connected to an output terminal of the boosting circuit. The variable resistor circuit controls a resistance value of the variable resistor based on a comparison result of the external voltage-level comparison circuit. | 09-15-2011 |
| 20110221034 | SEMICONDUCTOR STORAGE DEVICE - A semiconductor storage device comprises a peripheral circuit region including a wiring layer having wiring patterns, a cavity formed in a non-wiring region between the wiring patterns of the wiring layer, and an insulating film forming at least a part of a wall defining the cavity, and a memory cell region. | 09-15-2011 |
| 20110220968 | DEVICE - A device includes a semiconductor substrate, a first local bit line formed in the semiconductor substrate and elongated in a first direction, a first insulating layer on the semiconductor substrate, a first global bit line formed on the first insulating layer, a first path formed in the first insulating layer to couple a first end of the first local bit line with the first global bit line, and a second path formed in the first insulating layer to couple a second end of the first local bit line with the first global bit line. | 09-15-2011 |
| 20110217824 | ELECTRODE STRUCTURE, METHOD OF FABRICATING THE SAME, AND SEMICONDUCTOR DEVICE - A method for fabricating a semiconductor device includes the following processes. A first groove is formed in a first insulating film. A first conductive film is formed on inner surfaces of the first groove. A second groove is formed in the first insulating film to remove a part of the first conductive film. The second groove intersects the first groove. | 09-08-2011 |
| 20110216614 | SEMICONDUCTOR DEVICE ENABLING REFRESHING OF REDUNDANT MEMORY CELL INSTEAD OF DEFECTIVE MEMORY CELL - A semiconductor device includes memory blocks MB | 09-08-2011 |
| 20110216612 | Device - A device includes a control circuit that triggers a first operation every time a specific signal is supplied thereto, and that triggers a second operation in place of the first operation in response to the first specific signal supplied after the number of the first operation performed has reached a predetermined number. | 09-08-2011 |
| 20110215391 | SEMICONDUCTOR DEVICE AND METHOD OF MANUFACTURING THE SAME - A semiconductor device includes an isolation region, a semiconductor region, a groove, and an insulating film. The semiconductor region is defined by the isolation region. The groove is in the semiconductor region. The groove has first and second ends. At least one of the first and second ends reaches the isolation region. The insulating film is in the groove. | 09-08-2011 |
| 20110214025 | Control method of non-volatile semiconductor device - Disclosed is a control method of a non-volatile semiconductor device including cells, wherein a stress for rewriting information is applied to each of the cells, and each cell has a first time period as a period of time until a characteristic of the cell is stabilized to expectation value information after the stress for rewriting information is applied, a plurality of first sequences, in each of which writing is performed to a plurality of the cells continuously in time series, and a plurality of second sequences, in each of which verification of a plurality of the cells is performed continuously in time series, after the writing performed continuous in time series. When repeating, continuously in time series, a plurality of sets, each of the sets comprising a plurality of the first sequences and a plurality of the second sequences, a period of time from completion of application of the stress to each of the cells in the first sequence until start of the verification in the second sequence for the each of the cells subjected to the stress application, is arranged for each of all of the sets, wherein the period of time is the first time period or more. | 09-01-2011 |
| 20110211414 | SEMICONDUCTOR MEMORY MODULE - A semiconductor device includes a plurality of semiconductor memories, a clock signal synchronization circuit, and a first circuit. The clock signal synchronization circuit is electrically coupled to the plurality of semiconductor memories. The first circuit is electrically coupled to the plurality of semiconductor memories. The first circuit changes a bit width of data. The data is transferred between the first circuit and the plurality of semiconductor memories. | 09-01-2011 |
| 20110211411 | Semiconductor device, information processing system including same, and controller for controlling semiconductor device - To improve the access efficiency of a semiconductor memory that includes a plurality of memory chips. Based on a layer address, a bank address, and a row address received in synchronization with a row command, and a layer address, a bank address, and a column address received in synchronization with a column command, a memory cell selected by the row address and column address in a bank selected by the bank address included in a core chip selected by the chip address is accessed. This can increase the number of banks recognizable to a controller, thereby improving the memory access efficiency of the semiconductor device which includes the plurality of memory chips. | 09-01-2011 |
| 20110210302 | SEMICONDUCTOR DEVICE - A semiconductor device includes a semiconductor substrate of a first conductivity type, a first insulating film region that is embedded in a trench formed on the semiconductor substrate, a gate electrode that covers a lower surface of the first insulating film region, and a gate insulating film that is provided between the gate electrode and the semiconductor substrate. The semiconductor device further includes a first diffusion region that covers a first side surface of the first insulating film region, a second diffusion region that covers a second side surface of the first insulating film region, and a third diffusion region that covers an upper surface of the second diffusion region. A selective element includes a field-effect transistor that is constituted by the gate electrode, the first diffusion region, and the second diffusion region, and a bipolar transistor that is constituted by the substrate and the second and third diffusion regions. | 09-01-2011 |
| 20110207330 | Method of manufacturing semiconductor device - A sidewall core that is slimmed is formed in a memory cell array area by patterning a polysilicon layer formed over a silicon nitride layer. A silicon oxide layer that at least covers side surfaces of the sidewall core and the polysilicon layer are sequentially formed and an embedded hard mask is formed by etching back the polysilicon layer. Thereafter, the silicon nitride layer within the memory cell array area that does not overlap with the sidewall core or the embedded hard mask and the silicon nitride layer within a peripheral circuit area that overlaps with a positioning monitor mark are exposed by etching the silicon oxide layer, and then the silicon nitride layer that is to be etched is patterned. | 08-25-2011 |
| 20110205824 | Data processing system - A data processing system includes a first semiconductor device that has a plurality of blocks each including plural data, and a second semiconductor device that has a first control circuit controlling the first semiconductor device, and the first control circuit issues a plurality of commands to communicate with the first semiconductor device in units of access units including a plurality of first definitions that define a plurality of burst lengths indicating numbers of different data, respectively, and a plurality of second definitions that define correspondences between certain elements of data among the plural data included in the blocks, respectively, and arrangement orders in the numbers of different data that constitute the burst lengths, respectively, and communicates with the first semiconductor device through the plural data in the numbers of different data according to the first and second definitions. | 08-25-2011 |
| 20110205821 | Semiconductor device having sense amplifiers - A semiconductor device includes a plurality of memory cells connected to a word line, sense amplifiers arranged correspondingly to the memory cells, and a sense-amplifier control circuit that activates the sense amplifiers in response to selection of the word line and temporarily reduces driving performance of the sense amplifiers in response to a request for writing of data to any one of the memory cells. With this configuration, inverted data can be quickly overwritten to the sense amplifier. Furthermore, because a collective control is executed on the sense amplifiers to be activated, instead of individually controlling the sense amplifiers to be activated, the circuit scale of the sense-amplifier control circuit can be reduced. | 08-25-2011 |
| 20110205812 | SEMICONDUCTOR DEVICE - A semiconductor device includes a sense amplifier, transistors selectively establishing electrical connection between the sense amplifier and a data bus, depending on address; a write amplifier connected to the data bus, an external terminal outputting data from a memory cell to outside via the sense amplifier, the transistors, and the data bus in a first operation mode and supplying data from outside to the sense amplifier via the write amplifier, the data bus, and the transistors in a second operation mode, and a control circuit supplying an electric potential to gate electrodes of first transistors that establish the electrical connection depending on the address, wherein in a first operation mode, the control circuit supplies a first electric potential to the gate electrodes of the first transistors, so that the first transistors exhibit a first impedance value and in the second operation mode, the control circuit supplies a second electric potential to gate electrodes of the first transistors, so that the first transistors exhibit a second impedance value, an absolute value thereof being lower than that of the first impedance value. | 08-25-2011 |
| 20110205777 | Semiconductor memory device having vertical transistors - A device includes a first region including a plurality of first memory elements and a plurality of first vertical transistors, the first vertical transistors comprising a plurality of first selective transistors and a first switching transistor, each of the first selective transistors including an upper electrode coupled to a corresponding one of the first memory elements and a lower electrode, the first switching transistor including an upper electrode and a lower electrode coupled in common to the lower electrodes of the first selective transistors through a first signal line, a second region arranged to make a first line with the first region in a first direction and including a plurality of second memory elements and a plurality of second vertical transistors, the second vertical transistors comprising a plurality of second selective transistors and a second switching transistor, and a third region sandwiched between the first and the second regions. | 08-25-2011 |
| 20110204942 | CLOCK CONTROL CIRCUIT AND SEMICONDUCTOR DEVICE INCLUDING THE SAME - A clock control circuit includes: a phase determination circuit that generates a phase determination signal based on a phase of an external clock signal; a counter circuit having a count value updated based on a logic level of the phase determination signal; a delay line that generates an internal clock signal by delaying the external clock signal based on the count value; and a pitch adjustment circuit that sets an update pitch of the counter circuit to be twice as high as a minimum pitch in a period in which the phase determination signal has no change, and sets the update pitch of the counter circuit to the minimum pitch in response to a change in the phase determination signal. With this configuration, it is possible to realize quick and highly accurate locking of a DLL circuit. | 08-25-2011 |
| 20110204438 | SEMICONDUCTOR DEVICE - A semiconductor device may include, but is not limited to: a semiconductor substrate; a first insulating film; a second insulating film; a first gate electrode; a second gate electrode; and a first semiconductor region. The semiconductor substrate has first and second grooves crossing each other in plan view. The first insulating film covers an inner surface of the first groove. The second insulating film covers an inner surface of the second groove. The first gate electrode fills at least a bottom portion of the first groove. The second gate electrode fills at least a bottom portion of the second groove. The first semiconductor region is positioned in the semiconductor substrate. The first semiconductor region contains a first impurity. The first semiconductor region is adjacent to a first portion of the second insulating film. The first portion of the second insulating film covers at least a bottom region of the second groove. | 08-25-2011 |
| 20110203524 | ALD FILM-FORMING APPARATUS AND METHOD OF FABRICATING SEMICONDUCTOR DEVICE - An atomic layer deposition apparatus includes a reaction chamber, a wafer boat in the reaction chamber, a gas supply system connected to the reaction chamber, a first gas exhaust system connected to the reaction chamber, and a second gas exhaust system connected to the reaction chamber. The gas supply system supplies at least a material gas into the reaction chamber in a deposition process. The gas supply system supplies a purge gas into the reaction chamber in a purging process. The first gas exhaust system performs exhausting operation in the deposition process. The first gas exhaust system is prohibited from performing exhausting operation in the purging process. The second gas exhaust system is prohibited from performing exhausting operation in the deposition process. The second gas exhaust system performs exhausting operation in the purging process. | 08-25-2011 |
| 20110201173 | SEMICONDUCTOR DEVICE AND METHOD OF FABRICATING THE SAME - A method of forming a semiconductor device includes the following processes. A groove is formed in a semiconductor substrate. A first spin-on-dielectric layer is formed over a semiconductor substrate. An abnormal oxidation of the first spin-on-dielectric layer is carried out. A surface of the first spin-on-dielectric layer is removed. A second spin-on-dielectric layer is formed over the first spin-on-dielectric layer. A non-abnormal oxidation of the first and second spin-on-dielectric layers is carried out to modify the second spin-on-dielectric layer without modifying the first spin-on-dielectric layer. | 08-18-2011 |
| 20110201154 | SEMICONDUCTOR DEVICE INCLUDING STACKED SEMICONDUCTOR CHIPS - A semiconductor device comprising a plurality of semiconductor chips and a plurality of through-line groups is disclosed. Each of the through-line groups consists of a unique number of through-lines. The numbers associated with the through-line groups are mutually coprime to each other. When one of the through-lines is selected for the each through-line group, one of the semiconductor chip is designated by a combination of the selected through-lines of the plurality of the through-line groups. | 08-18-2011 |
| 20110199851 | MEMORY CONTROLLER, SEMICONDUCTOR STORAGE DEVICE, AND MEMORY SYSTEM INCLUDING THE MEMORY CONTROLLER AND THE SEMICONDUCTOR STORAGE DEVICE - A memory system includes a clock generation circuit, a memory device, and a controller. The memory device includes output circuits and a temperature sensor, the output circuits configured to output data at an output timing obtained based on a clock signal supplied from the clock generation circuit. The controller includes input circuits that receive the data outputted from the memory device at an input timing obtained based on a clock signal supplied from the clock generation circuit and a correction value setting circuit that adjusts the input timing based on a temperature value from the temperature sensor. | 08-18-2011 |
| 20110199840 | Semiconductor storage device - A device includes a memory cell array having a plurality of memory cells; sense amplifiers, which are arranged adjacent to the memory cell array, for amplifying signals that have been read out of corresponding ones of the memory cells; readout signal lines; a plurality of connection circuits for selectively connecting the sense amplifiers and the readout signal lines; a plurality of main amplifiers for amplifying and outputting signals that have been read out of the sense amplifiers via the readout signal lines by the connection circuits selected by selection signals; an enable signal line connected to the main amplifiers; and an enable signal generating circuit for outputting a main amplifier enable signal to the enable signal line. The enable signal generating circuit is placed in close proximity to the connection circuits. | 08-18-2011 |
| 20110199803 | Semiconductor device with a selection circuit selecting a specific pad - A semiconductor device includes a selection circuit for selecting a specific pad of a semiconductor memory. The semiconductor device is configured to produce a signal determined by a pin array by the selection circuit. | 08-18-2011 |
| 20110198679 | SEMICONDUCTOR DEVICE WITH VERTICAL TRANSISTOR - The present invention provides a semiconductor device having a plurality of vertical transistors, which includes, on a substrate, a semiconductor pillar | 08-18-2011 |
| 20110195572 | Chip-stacked semiconductor device and manufacturing method thereof - A method of manufacturing a semiconductor device, includes forming a trench surrounding a first area of a semiconductor substrate, the trench having a bottom surface and two side surfaces being opposite to each other, forming a silicon film on the bottom surface and side surfaces of the trench, forming an insulation film on the silicon film in the trench, grinding a bottom surface of the semiconductor substrate to expose the insulation film formed over the bottom surface of the trench, and forming a through electrode in the first area after grinding the bottom surface of the semiconductor substrate, the through electrode penetrating the semiconductor substrate. | 08-11-2011 |
| 20110195552 | METHOD FOR MANUFACTURING SEMICONDUCTOR DEVICE - A semiconductor device includes a transistor. A gate insulating film of the transistor contains oxygen and nitrogen atoms. The gate insulating film does not contain the nitrogen atoms in a first face thereof being in a contact with the semiconductor layer, and in a second face thereof being in a contact with the gate electrode. A concentration peak of the nitrogen atoms appears between the first and second faces in the gate insulating film. | 08-11-2011 |
| 20110194359 | SEMICONDUCTOR DEVICE AND SEMICONDUCTOR MODULE - A semiconductor device according to the present invention performs, when a first word structure is designated, control such that input and output of data is performed from a first data input/output terminal and from a second data input/output terminal in response to a first strobe signal and a second strobe signal. The semiconductor device performs, when a second word structure is designated and when a first control signal is supplied, control such that input and output of data is performed from the first data input/output terminal in response to the first strobe signal. The semiconductor device performs, when the second word structure is designated and when a second control signal is supplied, control such that input and output of data is performed from the second data input/output terminal in response to the second strobe signal. | 08-11-2011 |
| 20110193590 | SEMICONDUCTOR DEVICE AND CIRCUIT BOARD HAVING THE SEMICONDUCTOR DEVICE MOUNTED THEREON - To provide a semiconductor device including a first replica buffer connected to a calibration terminal, an impedance adjusting circuit that changes an impedance of the first replica buffer according to a comparison result between a potential of the terminal and a reference potential, and an impedance adjusting circuit that changes an impedance of a third replica buffer according to a comparison result between a potential of a connection node of a second replica buffer and the third replica buffer and a potential of the terminal. According to the present invention, both impedances of the first and third replica buffers are adjusted based on the potential of the terminal, and therefore an adjustment error of one of the replica buffers is not superimposed with an adjustment error of the other replica buffer. | 08-11-2011 |
