| ELKEM SOLAR AS Patent applications |
| Patent application number | Title | Published |
|---|
| 20110293500 | APPARATUS AND PROCESS FOR TREATMENT FOR IMMISCIBLE LIQUIDS - The present invention relates to an apparatus for continuous treatment of two immiscible molten liquids having different densities. The apparatus comprises at least one open-ended helical reaction channel ( | 12-01-2011 |
| 20110250118 | METHOD FOR PRODUCING HIGH PURITY SILICON - The present invention relates to a method for producing high purity silicon comprising providing molten silicon containing 1-10% by weight of calcium, casting the molten silicon, crushing the silicon and subjecting the crushed silicon to a first leaching step in an aqueous solution of HCl and/or HCl+FeCl3 and to a second leaching step in an aqueous solution of HF and HNO3. The leached silicon particles is thereafter subjected to heat treatment at a temperature of between 1250° C. and 1420° C. for a period of at least 20 minutes and the heat treated silicon is subjected to a third leaching step in an aqueous solution of HF and HNO3. | 10-13-2011 |
| 20100303707 | METHOD FOR PRODUCTION OF CALCIUM COMPOUNDS - The present invention relates to a method for production of calcium compounds having very low content of phosphorus and boron from an impure calcium chloride, solution containing phosphorus and boron, which method comprises the following steps: a) addition of a FeCl3-solution to the calcium chloride solution, b) adjusting the pH of the solution by addition of a base to between 3 and 9.5 for precipitation of iron hydroxide, iron phosphate and boron compounds, c) removal of the solid precipitate from the solution in step b) obtaining a purified calcium chloride solution, d) precipitation of a calcium compound from the solution from step c), and e) separation of the calcium compound from the solution in step d). | 12-02-2010 |
| 20100212738 | SOLAR CELLS - The present invention relates to multicrystalline p-type silicon wafers with high lifetime. The silicon wafers contain 0.2-2.8 ppma boron and 0.06-2.8 ppma phosphorous and/or arsenic and have been subjected to phosphorous diffusion and phosphorous gettering at a temperature of above 925° C. The invention further relates to a method for production of such multicrystalline silicon wafers and to solar cells comprising such silicon wafers. | 08-26-2010 |
| 20100133415 | COATING COMPOSITION FOR A MOULD - A coating system for a mould for the directional solidification of silicon. The coating is applied as an aqueous slurry of silicon nitride particle, carbon black and microsilica. | 06-03-2010 |
| 20100034723 | METHOD AND APPARATUS FOR REFINING A MOLTEN MATERIAL - A method for the directional solidification of silicon or other materials. A cooled plate is lowered into a silicon melt and an ingot of solid silicon is solidified downwards. | 02-11-2010 |
| 20080196209 | Method And Apparatus For Refining A Molten Material - A method for the directional solidification of silicon or other materials. A cooled plate is lowered into a silicon melt and an ingot of solid silicon is solidified downwards | 08-21-2008 |
