Efficient Power Conversion Corporation Patent applications |
Patent application number | Title | Published |
20150049528 | METHOD FOR OPERATING A NON-ISOLATED SWITCHING CONVERTER HAVING SYNCHRONOUS RECTIFICATION CAPABILITY SUITABLE FOR POWER FACTOR CORRECTION APPLICATIONS - A power factor correction (PFC) boost circuit. The PFC boost circuit can include a first switching device, a second switching device, a first gate driver coupled to the first switching device, a second gate driver coupled to the second switching device, and a PFC controller configured to control the first and second gate drivers. The PFC controller will utilize a new technique, referred to herein as “predictive diode emulation” to control the switching devices in a desired manner and to overcome inefficiencies and other problems that might arise using traditional diode emulation. The PFC controller is configured to operate in synchronous and non-synchronous modes. | 02-19-2015 |
20140183550 | PARASITIC INDUCTANCE REDUCTION FOR MULTILAYERED BOARD LAYOUT DESIGNS WITH SEMICONDUCTOR DEVICES - A highly efficient, single sided circuit board layout design providing magnetic field self-cancellation and reduced parasitic inductance independent of board thickness. The low profile power loop extends through active and passive devices on the top layer of the circuit board, with vias connecting the power loop to a return path in an inner layer of the board. The magnetic effect of the portion of the power loop on the top layer is reduced by locating the inner layer return path directly underneath the power loop path on the top layer. | 07-03-2014 |
20130234153 | ENHANCEMENT MODE GaN HEMT DEVICE - An enhancement-mode GaN transistor. The enhancement-mode GaN transistor includes a substrate, transition layers, a buffer layer comprised of a III Nitride material, a barrier layer comprised of a III Nitride material, drain and source contacts, a gate III-V compound containing acceptor type dopant elements, and a gate metal, where the gate III-V compound and the gate metal are formed with a single photo mask process to be self-aligned and the bottom of the gate metal and the top of the gate compound have the same dimension. The enhancement mode GaN transistor may also have a field plate made of Ohmic metal, where a drain Ohmic metal, a source Ohmic metal, and the field plate are formed by a single photo mask process. | 09-12-2013 |