eASIC Corporation Patent applications |
Patent application number | Title | Published |
20140105246 | Temperature Controlled Structured ASIC Manufactured on a 28 NM CMOS Process Lithographic Node - A temperature control for a Structured ASIC chip, manufactured using a CMOS process is shown. A circuit employing temperature feedback using a microprocessor and active heating elements, that in a preferred embodiment uses decoupling cell capacitors, is employed to actively heat a die when the temperature of the die drops below a predetermined minimum temperature, in order to achieve timing closure in the chip. | 04-17-2014 |
20140103985 | Digitally Controlled Delay Line for a Structured ASIC Having a Via Configurable Fabric for High-Speed Interface - A Digitally Controlled Delay Line (DCDL) for a Structured ASIC chip is used to delaying input or output signals into or out of core logic in a Structured ASIC. The DCDL has a multi-stage configuration that in a preferred embodiment comprises two fine delay stages for fine tuning the delay using sub-gate delay through an inverter whose delay can be adjusted with parallel CMOS transistors whose gates are biased with a voltage control signal that is thermometer coded. The fine-tune stages are followed by coarse delay stages that use gate-level delay. A DCDL controller outputs control signals that are Grey coded and converted to thermometer coded control signals by a Binary-to-Thermometer Decoder. The DCDL circuit block and accompanying Structured ASIC are manufactured on a 28 nm CMOS process lithographic node or smaller. A high speed routing fabric using a balanced binary tree is employed with the DCDL. | 04-17-2014 |
20140103959 | Architectural Floorplan for a Structured ASIC Manufactured on a 28 NM CMOS Process Lithographic Node or Smaller - A floorplan for a Structured ASIC chip is shown having a core region containing memory and VCLB logic cells surrounded by a plurality of IO connection fabrics that include a first IO connection fabric comprising IO sub-banks connecting the core of the chip to pins for external signals to the core, a first high-speed routing fabric disposed along the east-west vertical top of the core and connects the core to high-speed IO such as SerDes; a network-aware connection fabric connects the core to a microcontroller primarily for testing and repair of the memory in the core; and a second-high speed routing fabric is disposed on the north-south vertical sides of the core and communicates with the IO sub-banks. The VCLB Structured ASIC chip is manufactured on a 28 nm CMOS process lithographic node or smaller, having several metal layers and preferably is programmed on a single via layer. | 04-17-2014 |
20140028348 | Via-Configurable High-Performance Logic Block Involving Transistor Chains - A via-configurable logic block architecture for a Structured ASIC has a plurality of MOSFET transistor chains connected to one another through vias. In one embodiment there are three chains and the first transistor chain is a NFET transistor chain, the second transistor chain is a PFET transistor chain, and the third transistor chain is a NFET transistor chain. The first, second and third transistor chains are formed into devices made of transistors that are selected from a voltage threshold group consisting of LVT, SVT and HVT devices, where the first and third transistor chains are formed into devices from a voltage threshold group that is different from one another. In another embodiment transistor drive strength may be varied in the transistor chains of the logic block. In yet another embodiment both voltage threshold and drive strength may be varied together in a symmetrical manner. | 01-30-2014 |
20120243285 | MULTIPLE WRITE DURING SIMULTANEOUS MEMORY ACCESS OF A MULTI-PORT MEMORY DEVICE - A memory system may provide for a successful write of a multi-port memory cell (e.g., dual-port 2WR SRAM cell) when it is simultaneously accessed by more than one port. This multi-port memory cell may include at least two independent accesses to the memory cell, where each access may be controlled by an independent wordline signal. Each port may have an independent pair of bitlines. Multiple write circuitry (e.g., double write circuitry) may enable the write driver to drive the input data to more than one pair of bitlines simultaneously. | 09-27-2012 |
20120161093 | Via-Configurable High-Performance Logic Block Architecture - A via-configurable circuit block may contain chains of p-type and n-type transistors that may or may not be interconnected by means of configurable vias. Configurable vias may also be used to connect various transistor terminals to a ground line, a power line and/or to various terminals that may provide connections outside of the circuit block. | 06-28-2012 |
20110067982 | MEMS-BASED SWITCHING - A MEMS-based switching device may be used to implement an interconnect switch in a programmable integrated circuit device. Such a MEMS-based device may include a deformable cantilever that may form a closed or open circuit to thereby implement switching functionality. | 03-24-2011 |
20100195419 | Configurable Write Policy in a Memory System - A configurable memory system may be able to support at least three different write policies, namely, no-read-on-write, read-before-write, and read-after-write. Such a system may include configurable write signal timing, configurable read signal timing, and/or configurable wordline enable signal timing. Static and/or dynamic configuration of the system may be used. | 08-05-2010 |
20100182044 | PROGRAMMING AND CIRCUIT TOPOLOGIES FOR PROGRAMMABLE VIAS - A semiconductor device may be created using multiple metal layers and a layer including programmable vias that may be used to form various patterns of interconnections among segments of metal layers. The programmable vias may be formed of materials whose resistance is changeable between a high-resistance state and a low-resistance state. | 07-22-2010 |
20090109765 | Single via structured IC device - A configurable logic array may include a multiplicity of logic components, which may contain customizable look-up tables, and layers of fixed metal segments all of which may be customizable using a single custom via layer. The integrated circuit containing the configurable logic array may also include a multiplicity of customizable register files, customizable RAM blocks; a ROM block with customizable contents; or test logic With customizable test options and configurations to separately test logic and the PLLs. | 04-30-2009 |
20080263381 | DYNAMIC PHASE ALIGNMENT - A clock signal may be aligned with a data signal by delaying the signals relative to each other until an edge of one signal aligns with an edge of the other signal, and then causing an inversion of the clock signal. A further variation may limit the relative delay period to one-half clock cycle and may use a double inversion of the clock signal. | 10-23-2008 |
20080224260 | Programmable Vias for Structured ASICs - A semiconductor device may be created using multiple metal layers and a layer including programmable vias that may be used to form various patterns of interconnections among segments of metal layers. The programmable vias may be formed of materials whose resistance is changeable between a high-resistance state and a low-resistance state. | 09-18-2008 |