DuPont Air Products Nanomaterials LLC Patent applications |
Patent application number | Title | Published |
20120329279 | CMP Slurry/Method for Polishing Ruthenium and Other Films - A method and associated composition for CMP processing of noble metal-containing substrates (such as ruthenium-containing substrates) afford both high removal rates of the noble metal and are tunable with respect to rate of noble metal removal in relation to removal of other films. Low levels of an oxidizing agent containing one or more peroxy-functional group(s) can be used along with a novel ligand to effectively polish noble metal substrates. | 12-27-2012 |
20120142191 | Chemical Mechanical Planarization Composition And Method With Low Corrosiveness - A CMP composition and associated method are provided that afford good corrosion protection and low defectivity levels both during and subsequent to CMP processing. This composition and method are useful in CMP (chemical mechanical planarization) processing in semiconductor manufacture involving removal of metal(s) and/or barrier layer material(s) and especially for CMP processing in low technology node applications. | 06-07-2012 |
20120028466 | Method for Chemical Mechanical Planarization of a Tungsten-Containing Substrate - The titled method affords low dishing levels in the polished substrate while simultaneously affording high metal removal rates. The method utilizes an associated polishing composition. Components in the composition include a poly(alkyleneimine) such as polyethyleneimine, an abrasive, an acid, and an oxidizing agent, such as a per-compound. | 02-02-2012 |
20110312181 | METHOD FOR CHEMICAL MECHANICAL PLANARIZATION OF A COPPER-CONTAINING SUBSTRATE - A method using an associated composition for chemical mechanical planarization of a copper-containing substrate affords high copper removal rates and low dishing values during CMP processing of the copper-containing substrate, including an abrasive, at least three surfactants, preferably non-ionic and preferably three distinct surfactants, preferably in the range of 100 ppm to 2000 ppm per surfactant and an oxidizing agent. | 12-22-2011 |
20110300710 | Method for Forming Through-Base Wafer Vias for Fabrication of Stacked Devices - An effective chemical mechanical planarization (CMP) method is provided for forming vias in silicon wafers for the fabrication of stacked devices using TSV (through-silicon via) technology. The method affords high removal rates of both metal (e.g., copper) and silicon such that a need for a grinding step prior to CMP processing may not be necessary. The method affords an approximately 1:1 Cu:Si selectivity for removal of silicon and copper under appropriate conditions and the Cu:Si selectivity is tunable by adjustment of levels of some key components. | 12-08-2011 |
20110237079 | METHOD FOR EXPOSING THROUGH-BASE WAFER VIAS FOR FABRICATION OF STACKED DEVICES - An effective method for forming through-base wafer vias for the fabrication of stacked devices, such as electronic devices, is described. The base wafer can be a silicon wafer, in which case the method relates to TSV (through-silicon via) technology. The method affords high removal rates of silicon under appropriate conditions. | 09-29-2011 |
20110165777 | Method and Slurry for Tuning Low-K Versus Copper Removal Rates During Chemical Mechanical Polishing - A composition and associated method for the chemical mechanical planarization (CMP) of metal substrates on semiconductor wafers are described. The composition contains a nonionic fluorocarbon surfactant and a per-type oxidizer (e.g., hydrogen peroxide). The composition and associated method are effective in controlling removal rates of low-k films during copper CMP and provide for tune-ability in removal rates of low-k films in relation to removal rates of copper, tantalum, and oxide films. | 07-07-2011 |
20100167545 | Method and Composition for Chemical Mechanical Planarization of A Metal - A composition and associated method for chemical mechanical planarization of a metal-containing substrate (e.g., a copper substrate) are described herein which afford high and tunable rates of metal removal as well as low within a wafer non-uniformity values and low residue levels remaining after polishing. | 07-01-2010 |
20100101448 | Polishing Slurry for Copper Films - A slurry for use in a chemical mechanical planarization process for a wafer comprises a chemical portion and a mechanical portion. The chemical portion comprises a surfactant that forms a layer over a metallic layer of the wafer to decreasing dishing to less than an average of 843 Å reduce the static etch rate of the metallic layer. The mechanical portion comprises an abrasive agent to assist in the planarization of the metallic layer of the wafer. In another embodiment, a slurry for polishing a copper layer formed over a first layer is disclosed. The slurry comprises an abrasive agent; and a surfactant comprising at least one non-ionic surfactant to reduce the static etch rate of the copper layer. The shelf life of the slurry exceeds 90 days. | 04-29-2010 |
20100081279 | Method for Forming Through-base Wafer Vias in Fabrication of Stacked Devices - An effective method for forming through-base wafer vias in the fabrication of stacked devices is described. The base wafer can be a silicon wafer in which case the method relates to TSV (through-silicon via) technology. The method affords high removal rates of both silicon and metal (e.g., copper) under appropriate conditions and is tuneable with respect to base wafer material to metal selectivity. | 04-01-2010 |
20090061630 | Method for Chemical Mechanical Planarization of A Metal-containing Substrate - A method using an associated composition for chemical mechanical planarization of a metal-containing substrate (e.g., a copper substrate) is described. This method affords low dishing and local erosion levels on the metal during CMP processing of the metal-containing substrate. | 03-05-2009 |
20090057834 | Method for Chemical Mechanical Planarization of Chalcogenide Materials - A method and associated composition for chemical mechanical planarization of a chalcogenide-containing substrate (e.g., germanium/antimony/tellurium (GST)-containing substrate) are described. The composition and method afford low defect levels as well as low dishing and local erosion levels on the chalcogenide-containing substrate during CMP processing. | 03-05-2009 |
20090057661 | Method for Chemical Mechanical Planarization of Chalcogenide Materials - A method and associated composition for chemical mechanical planarization of a chalcogenide-containing substrate (e.g., germanium/antimony/tellurium (GST)-containing substrate) are described. The composition and method afford low defect levels (e.g., scratches incurred during polishing) as well as low dishing and local erosion levels on the chalcogenide-containing substrate during CMP processing. | 03-05-2009 |
20090047870 | Reverse Shallow Trench Isolation Process - A method of polishing a substrate surface containing silicon nitride and silicon oxide or silicon dioxide, comprising movably contacting the surface with a polishing pad and having a polishing composition disposed between the polishing pad and the surface, said polishing composition comprising 1) hydrous ceria abrasive; 2) polyvinylpyridine, vinyl pyridine copolymers, or both, and 3) water, wherein at 2 psi downpressure the silicon nitride removal rate is at least 500 angstroms per minute and the selectivity of silicon nitride to silicon oxide is at least 30. | 02-19-2009 |