| DOWA HOLDINGS CO., LTD. Patent applications |
| Patent application number | Title | Published |
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| 20120083408 | CARBON NANOTUBE AND METHOD FOR PRODUCING SAME - There is provided a high-purity carbon nanotube, which can be produced with simple purification by causing graphite to be hardly contained in crude soot obtained immediately after being synthesized by arc-discharge, and a method for producing the same. Soot containing carbon nanotubes produced by arc-discharge using an anode which contains amorphous carbon as a main component is heated at a temperature of not lower than 350° C. to be burned and oxidized, immersed in an acid, heated at a temperature, which is not lower than the heating temperature in the previous burning and oxidation and which is not lower than 500° C., to be burned and oxidized, and immersed in an acid again. | 04-05-2012 |
| 20120067172 | METAL RECOVERY METHOD USING PROTONEMATA OF MOSS PLANTS - Disclosed is a method for recovery of a metal using plants. The method for recovery of a metal involves bringing a protonema of a moss plant belonging to the family Funariaceae into contact with a metal-containing solution in which a metal(s) having an ionization tendency lower than that of silver is dissolved. | 03-22-2012 |
| 20120061683 | GROUP III NITRIDE SEMICONDUCTOR GROWTH SUBSTRATE, GROUP III NITRIDE SEMICONDUCTOR EPITAXIAL SUBSTRATE, GROUP III NITRIDE SEMICONDUCTOR ELEMENT AND GROUP III NITRIDE SEMICONDUCTOR FREE-STANDING SUBSTRATE, AND METHOD OF PRODUCING THE SAME - An object of the present invention is to provide a Group III nitride semiconductor epitaxial substrate, a Group III nitride semiconductor element, and a Group III nitride semiconductor free-standing substrate, which have good crystallinity, with not only AlGaN, GaN, and GaInN the growth temperature of which is 1050° C. or less, but also with Al | 03-15-2012 |
| 20110254135 | III-NITRIDE SEMICONDUCTOR GROWTH SUBSTRATE, III-NITRIDE SEMICONDUCTOR EPITAXIAL SUBSTRATE, III-NITRIDE SEMICONDUCTOR ELEMENT, III-NITRIDE SEMICONDUCTOR FREESTANDING SUBSTRATE, AND METHOD FOR FABRICATING THESE - An object of the present invention is to address the problems described herein and to provide a III-nitride semiconductor epitaxial substrate, a III-nitride semiconductor element, and a III-nitride semiconductor freestanding substrate, which have good crystallinity, not only with AlGaN, GaN, or GaInN, the growth temperature of which is at or below 1050° C., but also with Al | 10-20-2011 |
