| DOWA ELECTRONICS MATERIALS CO., LTD. Patent applications |
| Patent application number | Title | Published |
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| 20120103515 | BONDING MATERIAL USING METAL NANOPARTICLES AND BONDING METHOD - In a bonding material using nanoparticles and a bonding method, use in combination with microparticles is proposed. However, there is the problem in which it is not easy to uniformly mix the nanoparticles and the microparticles. The present invention uses a bonding material including metal nanoparticles having an average particle diameter of 100 nm or less and a surface coated with an organic substance having 6 to 8 carbon atoms, and a polar solvent in an amount of 5 to 20% by mass with respect to a powder of the metal nanoparticles, and objects to be bonded with the bonding material interposed therebetween are fired at 200 to 350° C. under pressure. Thus, the metal nanoparticles are melted and returned to a bulk material, and therefore a bonding layer of the bulk material can be formed at a low temperature equal to or lower than a melting point. | 05-03-2012 |
| 20120091435 | EPITAXIAL SUBSTRATE FOR ELECTRONIC DEVICE AND METHOD OF PRODUCING THE SAME - An epitaxial substrate for electronic devices is provided, which can improve vertical breakdown voltage and provides a method of producing the same. | 04-19-2012 |
| 20120061683 | GROUP III NITRIDE SEMICONDUCTOR GROWTH SUBSTRATE, GROUP III NITRIDE SEMICONDUCTOR EPITAXIAL SUBSTRATE, GROUP III NITRIDE SEMICONDUCTOR ELEMENT AND GROUP III NITRIDE SEMICONDUCTOR FREE-STANDING SUBSTRATE, AND METHOD OF PRODUCING THE SAME - An object of the present invention is to provide a Group III nitride semiconductor epitaxial substrate, a Group III nitride semiconductor element, and a Group III nitride semiconductor free-standing substrate, which have good crystallinity, with not only AlGaN, GaN, and GaInN the growth temperature of which is 1050° C. or less, but also with Al | 03-15-2012 |
| 20120045573 | SILVER CONDUCTIVE FILM AND PRODUCTION METHOD THEREOF - Provided is a silver conductive film, a thin film of silver comprising a sintered layer of silver particles having a mean particle size D | 02-23-2012 |
| 20120015189 | FERRITE POWDER FOR BONDED MAGNET, METHOD FOR MANUFACTURING FERRITE POWDER, AND BONDED MAGNET USING FERRITE POWDER - A bonded magnet is required to have a large energy product, which is the product of magnetization Br and coercive force Hc. However, in a ferrite powder for a bonded magnet, when the particle diameter is reduced to improve the coercive force, the packing properties are impaired, and the Br is lowered. | 01-19-2012 |
| 20120012373 | Submount and Method of Manufacturing the Same - A submount with an electrode layer having excellent wettability in soldering and method of manufacturing the same are disclosed. A submount ( | 01-19-2012 |
| 20120007116 | SEMICONDUCTOR LIGHT EMITTING DIODE AND METHOD OF PRODUCING THE SAME - A semiconductor light emitting diode including: a support substrate; an intermediate layer including an intermediate electrode portion, a second conductive semiconductor layer, an active layer, a first conductive semiconductor layer and an upper electrode portion sequentially disposed on the upper surface side of the support substrate in this order; and a lower electrode layer provided on the lower surface side of the support substrate, where: the intermediate layer has at least one intermediate electrode portion extending linearly or in an island-like shape; and the upper electrode portion and the intermediate electrode portion are disposed in such a positional relationship that these electrode portions are in parallel with and offset from each other and a distance between the upper electrode portion and the intermediate electrode portion is within the range of 10 μm to 50 μm. | 01-12-2012 |
| 20110316030 | SEMICONDUCTOR LIGHT EMITTING DIODE AND METHOD OF PRODUCING THE SAME - A semiconductor light emitting diode comprising: a support substrate; an intermediate layer including an intermediate electrode portion, a second conductive semiconductor layer, an active layer, a first conductive semiconductor layer and an upper electrode portion sequentially disposed on the upper surface side of the support substrate in this order; and a lower electrode layer provided on the lower surface side of the support substrate, wherein: the intermediate layer has at least one intermediate electrode portion extending linearly or in an island-like shape; and the upper electrode portion and the intermediate electrode portion are disposed, in a view obtained by projecting these electrode portions, on an imaginary plane in parallel with the upper surface of the support substrate, respectively, in a positional relationship that these electrode portions, are offset from each other. | 12-29-2011 |
| 20110305924 | METALLIC MAGNETIC POWDER AND MANUFACTURING METHOD OF THE SAME, MAGNETIC PAINTING, MAGNETIC POWDER FOR MAGNETIC THERAPY, AND MAGNETIC RECORDING MEDIUM - A metallic magnetic powder where a primary particle of each metallic magnetic particle is a powder without forming an aggregate, and a method of making the same that includes manufacturing a metallic magnetic powder constituted of metallic magnetic particles, containing a metallic magnetic phase, with Fe, or Fe and Co as main components, rare earth elements , or yttrium and one or more non-magnetic components removing the non-magnetic component from the metallic magnetic with a reducing agent, while making a complexing agent exist for forming a complex with the non-magnetic component in water; oxidizing the metallic magnetic particle with the non-magnetic component removed; substituting water adhered to the oxidized metallic magnetic particle with an organic solvent; and | 12-15-2011 |
| 20110298009 | EPITAXIAL SUBSTRATE FOR ELECTRONIC DEVICE AND METHOD OF PRODUCING THE SAME - An object of the present invention is to provide an epitaxial substrate for an electronic device, in which a lateral direction of the substrate is defined as a main current conducting direction and a warp configuration of the epitaxial substrate is adequately controlled, as well as a method of producing the epitaxial substrate. Specifically, the epitaxial substrate for an electron device, including: a Si single crystal substrate; and a Group III nitride laminated body formed by epitaxially growing plural Group III nitride layers on the Si single crystal substrate, wherein a lateral direction of the epitaxial substrate is defined as a main current conducting direction, is characterized in that the Si single crystal substrate is a p-type substrate having a specific resistance value of not larger than 0.01 Ω·cm. | 12-08-2011 |
| 20110278508 | COMPOSITION CONTAINING FINE SILVER PARTICLES, PRODUCTION METHOD THEREOF, METHOD FOR PRODUCING FINE SILVER PARTICLES, AND PASTE HAVING FINE SILVER PARTICLES - A composition containing fine silver particles which have a uniform particle size, can form a fine drawing pattern, and have a small environmental impact, a method for producing that composition, a method for producing fine silver particles, and a paste having fine silver particles are provided. | 11-17-2011 |
| 20110272642 | COMPOSITION CONTAINING FINE SILVER PARTICLES, PRODUCTION METHOD THEREOF, METHOD FOR PRODUCING FINE SILVER PARTICLES, AND PASTE HAVING FINE SILVER PARTICLES - A composition containing fine silver particles which have a uniform particle size, can form a fine drawing pattern, and have a small environmental impact, a method for producing that composition, a method for producing fine silver particles, and a paste having fine silver particles are provided. | 11-10-2011 |
| 20110266553 | NITRIDE SEMICONDUCTOR LIGHT-EMITTING ELEMENT AND METHOD OF MANUFACTURING THE SAME - An object of the present invention is to provide a nitride semiconductor light-emitting device in which contact resistance generated between an n-contact layer and an n-side electrode is effectively reduced while maintaining satisfactory external quantum efficiency, and a method of efficiently producing the nitride semiconductor light-emitting device. Specifically, the present invention characteristically provides a nitride semiconductor light-emitting device having a semiconductor laminated body including an n-type laminate, a light-emitting layer and a p-type laminate, and an n-side electrode and a p-side electrode, characterized in that: the n-type laminate includes an n-contact layer made of an Al | 11-03-2011 |
| 20110254135 | III-NITRIDE SEMICONDUCTOR GROWTH SUBSTRATE, III-NITRIDE SEMICONDUCTOR EPITAXIAL SUBSTRATE, III-NITRIDE SEMICONDUCTOR ELEMENT, III-NITRIDE SEMICONDUCTOR FREESTANDING SUBSTRATE, AND METHOD FOR FABRICATING THESE - An object of the present invention is to address the problems described herein and to provide a III-nitride semiconductor epitaxial substrate, a III-nitride semiconductor element, and a III-nitride semiconductor freestanding substrate, which have good crystallinity, not only with AlGaN, GaN, or GaInN, the growth temperature of which is at or below 1050° C., but also with Al | 10-20-2011 |
| 20110253949 | FINE SILVER PARTICLE POWDER, METHOD FOR MANUFACTURING THE SAME, SILVER PASTE USING THE POWDER, AND METHOD OF USE OF THE PASTE - A method suitable for mass production of nanoparticles with a uniform particle diameter is provided. It is an object to provide a powder of the nanoparticle obtained by this method, a dispersion containing the nanoparticles, and a paste containing the nanoparticles. There is provided a method for manufacturing silver particles including the step of reducing silver in a silver solution containing a protective agent composed of an organic material and a copper component in an amount of 1 to 1,000 ppm relative to the amount of silver to obtain particles having an average particle diameter (D | 10-20-2011 |
| 20110240962 | EPITAXIAL SUBSTRATE FOR ELECTRONIC DEVICE AND METHOD OF PRODUCING THE SAME - An epitaxial substrate for an electronic device having a Si single crystal substrate, a buffer as an insulating layer formed on the Si single crystal substrate, and a main laminated body formed by plural group III nitride layers epitaxially grown on the buffer, wherein a lateral direction of the epitaxial substrate is defined as an electric current conducting direction. The buffer including at least an initially grown layer in contact with the Si single crystal substrate and a superlattice laminate constituted of a superlattice multilayer structure on the initially grown layer. | 10-06-2011 |
| 20110236709 | LOW-TEMPERATURE SINTERABLE METAL NANOPARTICLE COMPOSITION AND ELECTRONIC ARTICLE FORMED USING THE COMPOSITION - [Object] A composition of a metal nanoparticle is provided in which reproducibility in a method of producing a metal film with excellent low-temperature sinterable properties is improved. An article using the metal nanoparticle composition is also provided. | 09-29-2011 |
| 20110176969 | COMPOSITE OXIDE FOR EXHAUST GAS PURIFICATION CATALYST, METHOD FOR MANUFACTURING THE SAME, COATING MATERIAL FOR EXHAUST GAS PURIFICATION CATALYST, AND FILTER FOR DIESEL EXHAUST GAS PURIFICATION - A composite oxide for an exhaust gas purification catalyst is provided which can burn PM in diesel engine exhaust gas at low temperatures and has a good S desorption property. The composite oxide for an exhaust gas purification catalyst is composed of Ce, Bi, Pr, R, and oxygen in a molar ratio of Ce:Bi:Pr:R=(1−x−y−z):x:y:z. The ratios of Ce, Bi, Pr, and R satisfy 0| 07-21-2011 | |
| 20110175041 | MANUFACTURING METHOD OF ITO PARTICLES, AND ITO POWDER, COATING MATERIAL FOR TRANSPARENT ELECTROCONDUCTIVE MATERIAL AND TRANSPARENT ELECTROCONDUCTIVE FILM - ITO powder and a producing method of the same, capable of producing ITO particles without using a solvent with a high boiling point by a simple treatment method without a heating process in an atmosphere which causes sintering. Also, an ITO powder is provided, which is suitable for a coating material for a transparent electroconductive material, the ITO powder being produced by a first step of dissolving salt containing indium and salt containing tin into an organic solvent, then adding to this organic solvent, an organic solvent containing a basic precipitant, to manufacture a precursor; and a second step of applying heat treatment to the precursor in a pressurizing vessel, to thereby generate ITO particles. | 07-21-2011 |
| 20110155968 | FINE METAL PARTICLE-CONTAINING COMPOSITION AND METHOD FOR MANUFACTURING THE SAME - A metal-containing composition that can provide, by low-temperature heat treatment, a sintered state comparable to that obtained by high-temperature heat treatment, a conductive paste, a metal film are provided. A method for manufacturing a metal-containing composition that can manufacture the metal-containing composition by simple operation steps is also provided. The metal-containing composition contains fine metal particles, and the ratio ρ | 06-30-2011 |
| 20110147642 | METHOD OF PRODUCING MAGNETIC POWDER FOR MAGNETIC RECORDING MEDIUM - A magnetic powder for magnetic recording medium comprises acicular particles constituted primarily of Fe, wherein the powder contains Co in an amount such that the Co/Fe ratio is 50 at. % or less and the Co is contained in a manner such that the surface portion has a higher concentration than the core portion of the particles, and upon subjecting the magnetic powder for magnetic recording medium to TG measurement, the powder exhibits at least two oxidation starting points: a low-temperature side oxidation starting point and a high-temperature side oxidation starting point. The magnetic powder achieves improved resistance to oxidation without sacrificing magnetic characteristics. | 06-23-2011 |
| 20110123830 | METALLIC MAGNETIC POWDER FOR MAGNETIC RECORDING AND PROCESS FOR PRODUCING THE METALLIC MAGNETIC POWDER - According to a method for producing a metallic magnetic powder for magnetic recording, which comprises treatment including, in sequence, a step of allowing a reducing agent to act on a metallic magnetic powder comprising particles having a metallic magnetic phase composed mainly of Fe or Fe and Co and containing one or more of rare earth elements (including Y), Al and Si (these are hereinafter referred to as “nonmagnetic ingredient”), in a liquid containing a complexing agent capable of forming a complex with at least one or more of the nonmagnetic ingredients, to thereby make the nonmagnetic ingredient in the powder particles dissolve out into the liquid (dissolution treatment step), a step of heat treatment in a reducing gas atmosphere (re-reduction treatment step), and a step of heat treatment in an oxidizing gas atmosphere (stabilization treatment step), a metallic magnetic powder for magnetic recording, which comprises particles having a particle length of from 10 nm to 45 nm and an axial ratio of 2 or more and in which the tip part of the particles is rounded, is obtained. | 05-26-2011 |
| 20110123426 | MAGNETIC POWDER SUITABLE FOR LOW-NOISE MEDIA - An iron system magnetic powder, and particularly an iron system magnetic powder comprised chiefly of Fe | 05-26-2011 |
| 20110115366 | Light source having phosphor including divalent, trivalent and tetravalent elements - A phosphor having an excitation band relative to lights in the wide range of wavelengths from ultraviolet to visible light, and having an emission spectrum in the red range and so on, with a wide half value width, and an LED and a light source using the phosphor and emitting white and other color lights with good color rendering properties are provided. Powdered raw materials of Ca | 05-19-2011 |
| 20110115359 | LIGHT-EMITTING ELEMENT - A light-emitting element comprising a substrate; a light-emitting layer disposed above the substrate and emitting a primary light; and, a reflective film disposed between the substrate and the light-emitting layer and formed by at least one layer that reflects the primary light, in which the light-emitting element further comprises a light dispersing multilayered film disposed between the substrate and the reflective film and formed by two or more types of light dispersing layers, and the light dispersing multilayered film multiple-disperses a secondary light into plural wavelengths and discharges the secondary light, which is excited by the primary light passing through the reflective film. | 05-19-2011 |
| 20110084235 | PHOSPHOR AND MANUFACTURING METHOD THEREFORE, AND LIGHT EMISSION DEVICE USING THE PHOSPHOR - To provide a phosphor having an emission spectrum with a broad peak in a range from green color to yellow color, having a broad and flat excitation band capable of using lights of broad range from near ultraviolet/ultraviolet to blue lights as excitation lights, and having excellent emission efficiency and luminance. The problem is solved by providing the phosphor expressed by a general composition formula MmAaBbOoNn:Z (where element M is one or more kinds of elements having bivalent valency, element A is one or more kinds of elements having tervalent valency, element B is one or more kinds of elements having tetravalent valency, O is oxygen, N is nitrogen, and element Z is one or more kinds of elements acting as the activator.), satisfying 4.0<(a+b)/m<7.0, a/m≧0.5, b/a>2.5, n>o, n=2/3m+a+4/3b−2/3o, and having an emission spectrum with a peak wavelength of 500 nm to 650 nm when excited by light in a wavelength range from 300 nm to 500 nm. | 04-14-2011 |
| 20110061496 | MAGNETIC METAL POWDER SUITABLE FOR USE IN MAGNETIC RECORDING MEDIA AND METHOD OF MANUFACTURING THE POWDER - A metal magnetic powder for a magnetic recording medium is provided whose particles have a metal magnetic phase, composed mainly of Fe or Fe plus Co, and an oxide layer, wherein the average major axis length of the powder particles is 10-50 nm, the average particle volume including the oxide layer is 5,000 nm | 03-17-2011 |
| 20110059294 | Si-Doped GaAs single crystal ingot and process for producing the same, and Si-Doped GaAs single crystal wafer produced from Si-Doped GaAs single crystal ingot - This invention provides an Si doped GaAs single crystal ingot, which has a low crystallinity value as measured in terms of etch pit density (EPD) per unit area and has good crystallinity, and a process for producing the same. An Si-doped GaAs single crystal wafer produced in a latter half part in the growth of the Si doped GaAs single crystal ingot is also provided. A GaAs compound material is synthesized in a separate synthesizing oven (a crucible). An Si dopant is inserted into the compound material to prepare a GaAs compound material with the Si dopant included therein. The position of insertion of the Si dopant is one where, when the GaAs compound material is melted, the temperature is below the average temperature. After a seed crystal is inserted into a crucible for an apparatus for single crystal growth, the GaAs compound material with the Si dopant included therein and a liquid sealing compound are introduced into the crucible. The crucible is set in the apparatus for single crystal growth, where the mixture is heat melted and, while stirring the liquid sealing compound, the melt is solidified by a vertical temperature gradient method and the crystal is grown to prepare an Si doped GaAs single crystal ingot. In this case, an Si doped GaAs single crystal wafer is also produced in the latter half part of the growth of the ingot. | 03-10-2011 |
| 20110027135 | COMPLEX OXIDE FOR EXHAUST GAS PURIFICATION CATALYST, PRODUCTION METHOD THEREOF, COATING MATERIAL FOR EXHAUST GAS PURIFICATION CATALYST, AND DIESEL EXHAUST GAS PURIFICATION FILTER - An oxidation catalyst is provided which is capable of combusting PM in a diesel engine exhaust gas at a low temperature and which has low degradation due to heat generated during combustion (i.e., has high heat resistance). | 02-03-2011 |
| 20110001127 | SEMICONDUCTOR MATERIAL, METHOD OF MAKING THE SAME, AND SEMICONDUCTOR DEVICE - A semiconductor material is provided comprising: a composition graded layer, formed on a Si substrate or an interlayer formed thereon, comprising a composition of Al | 01-06-2011 |
| 20100301363 | VERTICAL RESONATOR TYPE LIGHT EMITTING DIODE - A novel vertical resonator type light emitting diode of which has a simplified structure of the reflector layer of its light emitting side an which is resistant to declination of its emission output power towards a high temperature range, has an active layer | 12-02-2010 |
| 20100301272 | Phosphor and manufacturing method for the same, and light source - To provide a phosphor having an emission characteristic such that a peak wavelength of light emission is in a range from 580 to 680 nm, and having a high emission intensity, and having a flat excitation band with high efficiency for excitation light in a broad wavelength range from ultraviolet to visible light (wavelength range from 250 nm to 550 nm). For example, Ca | 12-02-2010 |
| 20100295643 | FERRITE POWDERS FOR BONDED MAGNET, PROCESS FOR THE PRODUCTION OF THE POWDERS, AND BONDED MAGNET MADE BY USING THE SAME - The present invention provides ferrite powders for bonded magnet capable of suppressing increase of SFD, while widening a particle size distribution for obtaining flowability and compressed density, and also capable of suppressing deterioration of orientation and magnetizability, and provides a process for a production magnetoplumbite-type ferrite powders containing an oxide of at least one or more kinds of transition metals selected from a group consisting of Zr, Ti, Zn, Co, Mn, and Ni, having a mean particle size of 0.20 μm or more and less than 5.00 μm, being the ferrite powders for bonded magnet with the ratio of particles having particle size of 1 μm or less being 20 mass % or more in the magnetoplumbite-type ferrite powder size distribution obtained by a laser diffraction type particle size distribution analyzer. | 11-25-2010 |
| 20100289405 | Light-emitting device and manufacturing method thereof - A light-emitting device of the present invention includes: a light-emitting element; and a phosphor layer containing phosphors that absorb light from the light-emitting element and wavelength-convert the absorbed light to emit light. The phosphor layer has a structure in which the phosphors are disposed on an applied adhesive with a thickness equal to or less than an average particle size of the phosphors. A thickness of the phosphor layer is equal to or less than five times the average particle size of the phosphors, and an occupancy ratio of the phosphors in the phosphor layer is 50% or more. Further, the phosphors disposed on the adhesive has an adjusted particle size. | 11-18-2010 |
| 20100258766 | Phosphor and manufacturing method for the same, and light source - To provide a phosphor having an emission spectrum with a broad peak in a range from yellow color to red color (580 nm to 680 nm) and an excellent excitation band on the longer wavelength side from near ultraviolet/ultraviolet of excitation light to visible light (250 nm to 550 nm), and having an improved emission intensity. The phosphor is provided, which is given by a general composition formula expressed by MmAaBbOoNn:Z, (wherein element M is more than one kind of element having bivalent valency, element A is more than one kind of element having tervalent valency selected from the group consisting of Al, Ga, In, Tl, Y, Sc, P, As, Sb, and Bi, element B is more than one kind of element having tetravalent valency, O is oxygen, N is nitrogen, and element Z is more than one kind of element selected from rare earth elements or transitional metal elements, satisfying m>0, a>0, b>0 o≧0, and n=2/3m+a+4/3b−2/3o), and further containing boron and/or fluorine. | 10-14-2010 |
| 20100252785 | ITO POWDER AND METHOD OF PRODUCING THE SAME, COATING MATERIAL FOR TRANSPARENT CONDUCTIVE MATERIAL, AND TRANSPARENT CONDUCTIVE FILM - ITO particles are provided, which are small in variations of particle diameters and used for an ITO coating material capable of forming a transparent conductive film having high transparency and low haze value. Also, ITO coating material is provided, containing such ITO particles, and a transparent conductive film containing such ITO particles. Further, ITO powders are provided, wherein 90% or more of ITO particles constituting the ITO powders have a primary particle diameter of 20 nm or less. | 10-07-2010 |
| 20100243967 | COMPOSITION CONTAINING FINE SILVER PARTICLES, PRODUCTION METHOD THEREOF, METHOD FOR PRODUCING FINE SILVER PARTICLES, AND PASTE HAVING FINE SILVER PARTICLES - A composition containing fine silver particles which have a uniform particle size, can form a fine drawing pattern, and have a small environmental impact, a method for producing that composition, a method for producing fine silver particles, and a paste having fine silver particles are provided. | 09-30-2010 |
| 20100230630 | Ferrite Magnetic Powder for Bond Magnet and Manufacturing Method of the Same, and Bond Magnet - To provide ferrite magnetic powders for bond magnet capable of surely suppressing residual hexavalent chrome, being an environmental load substance, having no adverse influence on the magnetic characteristics, which is an obstacle in use, and without damaging productivity and at a low cost. The method includes the steps of obtaining sintered powders by sintering raw material powders; wet-pulverizing the sintered powders; wet-cleaning the sintered powders; and annealing the cleaned sintered powders, wherein in the step of the wet-pulverization and in the step of wet-cleaning, generation of the hexavalent chrome, being an environmental load substance, is suppressed by performing the pulverization and cleaning while maintaining pH of a dispersion solvent at 8.5 or less, at the time of pulverization and cleaning. | 09-16-2010 |
| 20100171066 | MAGNETIC IRON OXIDE PARTICLE, MAGNETIC MATERIAL, AND RADIO WAVE ABSORBER - Disclosed is a magnetic material having high Hc and High Curie point, which is capable of controlling such magnetic characteristics without requiring rare or expensive raw materials. Specifically disclosed is a magnetic material composed of particles of a magnetic iron oxide which is represented by the following general formula: ε-A | 07-08-2010 |
| 20100086869 | CARRIER CORE MATERIAL FOR ELECTROPHOTOGRAPHIC DEVELOPER AND METHOD FOR PRODUCING THE SAME, CARRIER FOR ELECTROPHOTOGRAPHIC DEVELOPER, AND ELECTROPHOTOGRAPHIC DEVELOPER - To provide a carrier for two-component electrophotographic developer not only having excellent fluidity but also having proper surface irregularities necessary for imparting electric charge, without generating cracks/chipping of particles even under an influence of stirring stress over a long period of time. A particle surface has raised parts of striped pattern extending almost continuously in a plurality of directions while being superposed on one another, with a surface formed with raised parts of striped pattern occupying 80% or more of the whole surface of a particle. Depths of grooves between the adjacent raised parts are 0.05 μm or more and 0.2 μm or less, average surface roughness Ra is 0.1 μm or more and 0.3 μm or less, roundness is 0.90 or more, and average particle size is 151 μm or more and 100 μm or less, and a carrier core material thus constituted is coated with resin. Thus, the carrier for two-component electrophotographic developer is prepared. | 04-08-2010 |
| 20100075244 | CARRIER CORE MATERIAL FOR ELECTROPHOTOGRAPHIC DEVELOPER, AND MANUFACTURING METHOD OF THE SAME, CARRIER FOR ELECTROPHOTOGRAPHIC DEVELOPER, AND ELECTROPHOTOGRAPHIC DEVELOPER - To provide a carrier for electrophotographic developer, capable of realizing a high image quality and full colorization and reducing carrier scattering, and a manufacturing method of the same, and an electrophotographic developer containing the carrier. A carrier core material for electrophotographic developer, with a general formula expressed by Mg | 03-25-2010 |
| 20100035174 | CARRIER CORE MATERIAL FOR ELECTROPHOTOGRAPHIC DEVELOPER AND METHOD FOR PRODUCING THE SAME, CARRIER FOR ELECTROPHOTOGRAPHIC DEVELOPER, AND ELECTROPHOTOGRAPHIC DEVELOPER - To provide a carrier for an electrophotographic developer in which high image quality and full colorization are possible while carrier scattering is reduced, and a method for producing the carrier, and an electrophotographic developer including the carrier. A carrier core material for an electrophotographic developer is produced so that the half-value width B of a peak having a maximum intensity in an XRD pattern satisfies B≦0.160 (degree). A carrier for an electrophotographic developer and an electrophotographic developer are produced from the carrier core material for an electrophotographic developer. | 02-11-2010 |
| 20100013375 | LIGHT EMITTING DEVICE AND METHOD FOR PRODUCING SAME - A light emitting device | 01-21-2010 |
| 20100013374 | LIGHT EMITTING DEVICE AND METHOD FOR PRODUCING SAME - A light emitting device | 01-21-2010 |
| 20100001631 | Phosphor, manufacturing method of phosphor sheet and phosphor, and light emitting device using the phosphor - To provide a phosphor given by a general composition formula expressed by MmAaBbOoNn:Z, (wherein element M is one or more kinds of elements having bivalent valency, element A is one or more kinds of elements having tervalent valency, element B is one or more kinds of elements having tetravalent valency, O is oxygen, N is nitrogen, and element Z is one or more kind of activating agent, satisfying m>0, a>0, b>0, o≧0, and n>0), with a change rate of a ratio of element B atoms to the total numbers of atoms being smaller by 10% or the change rate of oxygen atoms to the total numbers of atoms being smaller by 40% in a range from a particle surface up to depth 2000 nm, having a broad emission spectrum in a range of blue color, having a broad flat excitation band in a range of near ultraviolet/ultraviolet, and having excellent emission efficiency, emission intensity, and luminance. | 01-07-2010 |
| 20100001234 | Manufacturing method of nitride phosphor or oxynitride phosphor - To reduce impurity contents of carbon and oxygen not contributing to light emission, then suppress deterioration of emission intensity of a phosphor, and improve emission efficiency of this phosphor. Therefore, there is provided a firing method of nitride or oxynitride phosphors, wherein a crucible | 01-07-2010 |
| 20090288401 | COMPOSITE OXIDE FOR EXHAUST GAS PURIFYING CATALYST AND EXHAUST GAS PURIFYING CATALYST, AND DIESEL EXHAUST GAS PURIFYING FILTER - To provide an oxidation catalyst capable of burning PM of diesel, engine exhausts gas at a low temperature, and hardly subjected to poisoning due to sulfur oxide. A composite oxide contains Ce, Bi, and M (wherein M is one or more elements selected from Mg, Ca, Sr, and Ba) and oxygen, and is manufactured, with a molar ratio of Ce, Bi, M expressed by Ce:Bi:M=(1−x−y):x:y, satisfying 0| 11-26-2009 | |
| 20090267485 | Phosphor and Manufacturing Method Therefore, and Light Emission Device Using the Phosphor - To provide a phosphor for manufacturing an one chip type LED illumination, etc, by combining a near ultraviolet/ultraviolet LED and a blue LED, and having an excellent emission efficiency including luminance. The phosphor is given as a general composition formula expressed by MmAaBbOoNn:Z, (where element M is one or more kinds of elements having bivalent valency, element A is one or more kinds of elements having tervalent valency, element B is one or more kinds of elements having tetravalent valency, O is oxygen, N is nitrogen, and element Z is one or more kinds of elements acting as an activator.), satisfying a=(1+x)×m, b=(4−x)×m, o=x×m, n=(7−x)×m, 0≦x≦1, wherein when excited by light in a wavelength range from 300 nm to 500 nm, the phosphor has an emission spectrum with a peak wavelength in a range from 500 nm to 620 nm. | 10-29-2009 |
| 20090261919 | MILLIMETER WAVE BAND NONRECIPROCAL DEVICE - [Problem] When a nonreciprocal device operating at 100 GHz to 300 GHz is to be realized by using a conventional magnetic material of garnet-type ferrite or spinel-type ferrite, a huge permanent magnet is required and, therefore, it is very difficult to achieve a millimeter-wave band nonreciprocal device for practical use. | 10-22-2009 |
| 20090250684 | LIGHT EMITTING SEMICONDUCTOR - A semiconductor element is disclosed having a layered body of a first conductivity type, a light emitting layer, a layered body of a second conductivity type, a constriction layer having a constriction hole, and a first electrode having a lighting hole, a second electrode positioned such that charge traveling between the first and second electrodes passes through the light emitting layer. The constriction hole area is larger than the lighting hole area, and the lighting hole and the constriction hole expose a part of the layered body of the second conductivity type. A mirror is positioned such that the mirror receives light emitted from the light emitting layer that passes through the layered body of the first conductivity type, and the mirror is constructed to have a high reflection ratio for light having peak wavelengths between 200 nm to 350 nm. | 10-08-2009 |
| 20090136780 | METHOD OF REDUCING DISLOCATIONS IN GROUP III NITRIDE CRYSTAL, AND SUBSTRATE FOR EPITAXIAL GROWTH - An epitaxial substrate | 05-28-2009 |
| 20090110857 | OXYGEN ABSORBER FOR BLENDING IN A RESIN AND METHOD OF PRODUCING THE SAME - An oxygen absorber for blending in a resin, comprising a mixed powder containing an iron powder, a metal halide and an alkaline substance, and having a half-peak width on a plane (110) of 0.20°/2θ (Co—Kα) or less as measured by a powder X-ray diffraction method, a specific surface area of 0.5 m | 04-30-2009 |
| 20090109652 | Phosphor and manufacturing method for the same, and light source - To provide a phosphor having an emission spectrum with a broad peak in a range from yellow color to red color (580 nm to 680 nm) and an excellent excitation band on the longer wavelength side from near ultraviolet/ultraviolet of excitation light to visible light (250 nm to 550 nm), and having an improved emission intensity. The phosphor is provided, which is given by a general composition formula expressed by MmAaBbOoNn:Z, (wherein element M is more than one kind of element having bivalent valency, element A is more than one kind of element having tervalent valency selected from the group consisting of Al, Ga, In, Tl, Y, Sc, P, As, Sb, and Bi, element B is more than one kind of element having tetravalent valency, O is oxygen, N is nitrogen, and element Z is more than one kind of element selected from rare earth elements or transitional metal elements, satisfying m>0, a>0, b>0 o≧0, and n=2/3m+a+4/3b−2/3o), and further containing boron and/or fluorine. | 04-30-2009 |
| 20090098377 | Si-Doped GaAs Single Crystal Ingot and Process for Producing the Same, and Si-Doped GaAs Single Crystal Wafer Produced From Si-Doped GaAs Single Crystal Ingot - This invention provides an Si doped GaAs single crystal ingot, which has a low crystallinity value as measured in terms of etch pit density (EPD) per unit area and has good crystallinity, and a process for producing the same. An Si-doped GaAs single crystal wafer produced in a latter half part in the growth of the Si doped GaAs single crystal ingot is also provided. A GaAs compound material is synthesized in a separate synthesizing oven (a crucible). An Si dopant is inserted into the compound material to prepare a GaAs compound material with the Si dopant included therein. The position of insertion of the Si dopant is one where, when the GaAs compound material is melted, the temperature is below the average temperature. After a seed crystal is inserted into a crucible for an apparatus for single crystal growth, the GaAs compound material with the Si dopant included therein and a liquid sealing compound are introduced into the crucible. The crucible is set in the apparatus for single crystal growth, where the mixture is heat melted and, while stirring the liquid sealing compound, the melt is solidified by a vertical temperature gradient method and the crystal is grown to prepare an Si doped GaAs single crystal ingot. In this case, an Si doped GaAs single crystal wafer is also produced in the latter half part of the growth of the ingot. | 04-16-2009 |
| 20090085010 | Phosphor and manufacturing method for the same, and light source - To provide a phosphor having an emission characteristic such that a peak wavelength of light emission is in a range from 580 to 680 nm, and having a high emission intensity, and having a flat excitation band with high efficiency for excitation light in a broad wavelength range from ultraviolet to visible light (wavelength range from 250 nm to 550 nm). For example, Ca | 04-02-2009 |
| 20090057835 | Group III nitride semiconductor and a manufacturing method thereof - A manufacturing method of a group III nitride semiconductor includes the steps of: depositing a metal layer on an AlN template substrate or an AlN single crystal substrate formed by depositing an AlN single crystal layer with a thickness of not less than 0.1 μm nor more than 10 μm on a substrate made of either one of sapphire, SiC, and Si; forming a metal nitride layer having a plurality of substantially triangular-pyramid-shaped or triangular-trapezoid-shaped microcrystals by performing a heating nitridation process on the metal layer under a mixed gas atmosphere of ammonia; and depositing a group III nitride semiconductor layer on the metal nitride layer. | 03-05-2009 |
| 20090026915 | Phosphor, Phosphor Sheet, and Manufacturing Method Therefore, and Light Emission Device Using the Phosphor - To provide a phosphor having a broad emission spectrum in a range of blue color (in a peak wavelength range from 400 nm to 500 nm), having a broad flat excitation band in a near ultraviolet/ultraviolet range, and having excellent emission efficiency and emission intensity/luminance. The phosphor is given as a general composition formula expressed by MmAaBbOoNn:Z, (where element M is the element having bivalent valency, element A is the element having tervalent valency, element B is the element having tetravalent valency, O is oxygen, N is nitrogen, and element Z is more than one kind of element acting as an activator), satisfying 5.0<(a+b)/m<9.0, 0≦a/m≦2.0, 0≦o≦n, n=2/3m+a+4/3b−2/3o, and has an emission spectrum with a maximum peak in the wavelength range from 400 nm to 500 nm under an excitation of the light in a wavelength range from 250 nm to 430 nm. | 01-29-2009 |
| 20080303412 | Light source having phosphor including divalent, trivalent and tetravalent elements - A phosphor having an excitation band relative to lights in the wide range of wavelengths from ultraviolet to visible light, and having an emission spectrum in the red range and so on, with a wide half value width, and an LED and a light source using the phosphor and emitting white and other color lights with good color rendering properties are provided. Powdered raw materials of Ca | 12-11-2008 |
| 20080205013 | SOLDER LAYER AND DEVICE BONDING SUBSTRATE USING THE SAME AND METHOD FOR MANUFACTURING SUCH A SUBSTRATE - A solder layer and an electronic device bonding substrate having high bonding strength of a device and low bonding failure even by a simplified bonding method of a device to a substrate and a method for manufacturing the same are provided. | 08-28-2008 |
