DOOSAN MECATEC CO., LTD. Patent applications |
Patent application number | Title | Published |
20100130349 | PREPARING PHOSPHORUS CONTAINING ALUMINA SUPPORT BY SOL-GEL METHOD FOR FISCHER-TROPSCH SYNTHESIS AND CATALYST PREPARATION THEREOF - The present invention relates to a process of preparing of a phosphorus-containing phosphorus-alumina support by a sol-gel method and a cobalt/phosphorus-alumina catalyst where cobalt is supported onto the phosphorus-alumina support as an active ingredient. The phosphorus-alumina support is prepared by a sol-gel method and has wide specific surface area with bimodal pore size distribution and high cobalt dispersion, thereby enabling to increase heat and mass transfer, stabilize the structure by modifying the surface property of alumina and decrease the deactivation rate due to the reduced oxidation of cobalt component during the F-T reaction. When Fischer-Tropsch reaction (F-T) is conducted on the catalyst, the catalyst maintains a superior thermal stability, inhibits the deactivation due to water generation during the F-T reaction and also causes relatively high conversion of carbon monoxide and stable selectivity of liquid hydrocarbons. | 05-27-2010 |
20100093523 | CATALYSTS FOR FISCHER-TROPSCH SYNTHESIS ON COBALT/PHOSPHORUS-ALUMINUM OXIDE AND PREPARATION METHODS THEREOF - The present invention relates to a cobalt/phosphorus-alumina catalyst in which cobalt is supported as an active component on a phosphorus-alumina support wherein phosphorus is supported on alumina surface. With a bimodal pore structure of pores of relatively different pore sizes, the catalyst provides superior heat- and matter-transfer performance and excellent catalytic reactivity. Especially, when Fischer-Tropsch (F-T) reaction is performed using the catalyst, deactivation by the water produced during the F-T reaction is inhibited and, at the same time, the dispersion and reducing property of cobalt and other active component are improved. Therefore, the cobalt/phosphorus-alumina catalyst for F-T reaction in accordance with the present invention provides good carbon monoxide conversion and stable selectivity for liquid hydrocarbons. | 04-15-2010 |
20090130955 | Loading Device of Chemical Mechanical Polishing Equipment for Semiconductor Wafers - A loading device of chemical mechanical polishing (CMP) equipment for processing semiconductor wafers is provided. The loading device includes a loading cup having a cup-like bath, a cup plate installed in the bath, and a loading plate supported on the cup plate for absorbing shock and seating the wafer. A driving device and a driving shaft horizontally pivot and vertically move the loading cup between a platen of a polishing apparatus and a spindle. An arm connects the loading cup and the driving shaft. At least one through hole is located in a mutually corresponding position of the bath, the cup plate, and the loading plate of the loading cup. A probe assembly optically detects a polished thickness at a polished point on the wafer. | 05-21-2009 |
20090093199 | CLEANING DEVICE FOR CHEMICAL MECHANICAL POLISHING EQUIPMENT - A cleaning device for chemical-mechanical equipment, which includes: an irrotatable center shaft irrotatably coupled with a spindle which is rotated, the irrotatable center shaft including a first channel and a second channel formed in an interior of the irrotatable center shaft, cleaning liquid flowing into the first channel and compressed gas flowing into the second channel; and a nozzle block coupled with the spindle so as to revolve about the irrotatable center shaft above a polishing pad, the nozzle block mixing cleaning liquid supplied through the first channel with compressed gas supplied through the second channel so as to generate twin-fluid, and pressure-injecting the mixed twin-fluid on the polishing pad. Accordingly, cleaning liquid is pressurized so as to be rapidly injected on a polishing pad so that slurry particles and alien substances on the polishing pad are completely removed. Furthermore, wafer scratch can be prevented and the life of the polishing pad can also be increased. | 04-09-2009 |